JPH10242526A - Surface mount type light emitting diode and its manufacture - Google Patents

Surface mount type light emitting diode and its manufacture

Info

Publication number
JPH10242526A
JPH10242526A JP9038114A JP3811497A JPH10242526A JP H10242526 A JPH10242526 A JP H10242526A JP 9038114 A JP9038114 A JP 9038114A JP 3811497 A JP3811497 A JP 3811497A JP H10242526 A JPH10242526 A JP H10242526A
Authority
JP
Japan
Prior art keywords
emitting diode
light emitting
diode element
electrode pattern
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9038114A
Other languages
Japanese (ja)
Other versions
JP3797636B2 (en
Inventor
Hirohiko Ishii
廣彦 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to JP03811497A priority Critical patent/JP3797636B2/en
Publication of JPH10242526A publication Critical patent/JPH10242526A/en
Application granted granted Critical
Publication of JP3797636B2 publication Critical patent/JP3797636B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain light emission of high power, by increasing convergency of light outputted from a light emitting diode element, in a surface mount type light emitting diode. SOLUTION: In a surface mount type light emitting diode, a cathode electrode pattern 22 and an anode electrode pattern 23 are formed on the upper surface of a substrate 21, a light emitting diode element 25 is fixed on the cathode electrode pattern 22 by using conducting adhesive agent, the light emitting diode element 25 and the anode electrode pattern 23 are connected by using a bonding wire 29, the light emitting diode element 25 and the bonding wire 29 are sealed by using light transmission resin 30, a reflecting member 26 is arranged on the substrate 21 so as to surround the periphery of a light emitting diode element 25, and the upper part of the light emitting diode element 25 is sealed by using the light transmission resin 30 constituted of a rectangular base part 31 and a hemispheric lens part 32.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、マザーボードの表
面に直接実装される表面実装型発光ダイオード及びその
製造方法に関するものである。[0001] 1. Field of the Invention [0002] The present invention relates to a surface mount type light emitting diode directly mounted on a surface of a motherboard and a method of manufacturing the same.

【０００２】[0002]

【従来の技術】従来、この種の表面実装型発光ダイオー
ドとしては、例えば図１１及び図１２に示したタイプの
ものと、図１３及び図１４に示したタイプのものが知ら
れている。いずれのタイプも基板１の上面にカソード電
極パターン２とアノード電極パターン３とを設け、カソ
ード電極パターン２の上に導電性接着剤４によって発光
ダイオード素子５を固着すると共に、発光ダイオード素
子５と前記アノード電極パターン３とをボンディングワ
イヤ６によって接続し、発光ダイオード素子５及びボン
ディングワイヤ６を透光性樹脂７によって封止した構造
のものである。そして、透光性樹脂７による封止構造
が、前者の場合は周囲に枠を設けずに透光性樹脂７のみ
で構成しているのに対して、後者の場合は基板１の上面
周囲にモールド枠８を設け、このモールド枠８の内部に
透光性樹脂７を充填した構造のものとなっていた。2. Description of the Related Art Conventionally, as this type of surface mount type light emitting diode, for example, the type shown in FIGS. 11 and 12 and the type shown in FIGS. 13 and 14 are known. In both types, a cathode electrode pattern 2 and an anode electrode pattern 3 are provided on the upper surface of a substrate 1, and a light emitting diode element 5 is fixed on the cathode electrode pattern 2 by a conductive adhesive 4, and the light emitting diode element 5 and the The anode electrode pattern 3 is connected by a bonding wire 6, and the light emitting diode element 5 and the bonding wire 6 are sealed by a translucent resin 7. In the former case, the sealing structure made of the light-transmitting resin 7 is constituted only by the light-transmitting resin 7 without providing a frame around the former, whereas in the latter case, the sealing structure is formed around the upper surface of the substrate 1. The mold frame 8 is provided, and the inside of the mold frame 8 is filled with the translucent resin 7.

【０００３】[0003]

【発明が解決しようとする課題】ところで、上記従来の
表面実装型発光ダイオードにあっては、前者の場合は発
光ダイオード素子５から側面方向に出た光９が透光性樹
脂７を透過して周囲に拡散してしまうため上方向に集光
できず、所定の光出力が得られないといった問題があっ
た。一方、後者の場合は発光ダイオード素子５から側面
方向に出た光は、モールド枠８の内周面で反射されて上
方向に向かうが、集光されずにそのまま平行光１０とし
て発光するために、光出力が必ずしも十分といえるもの
ではなかった。By the way, in the above-mentioned conventional surface mount type light emitting diode, in the former case, the light 9 emitted from the light emitting diode element 5 in the lateral direction is transmitted through the light transmitting resin 7. There is a problem that light cannot be collected upward because of diffusion to the surroundings, and a predetermined light output cannot be obtained. On the other hand, in the latter case, the light emitted from the light emitting diode element 5 in the side direction is reflected by the inner peripheral surface of the mold frame 8 and goes upward, but is emitted as parallel light 10 without being collected. However, the light output was not always sufficient.

【０００４】一方、集光性を重視した発光ダイオードと
して、従来から図１５に示したようなリードフレーム型
の発光ダイオード１１が知られている。この種の発光ダ
イオード１１は、一方のリードフレーム１２ａの頂部に
凹所１３を設け、この凹所１３に発光ダイオード素子１
４を載せて固着すると共に、この発光ダイオード素子１
４と他方のリードフレーム１２ｂの頂部をボンディング
ワイヤ１５によって接続したものの周囲を、透光性樹脂
１６によって封止した構造のものである。On the other hand, a lead frame type light emitting diode 11 as shown in FIG. 15 has been conventionally known as a light emitting diode which emphasizes the light collecting property. In this type of light emitting diode 11, a recess 13 is provided at the top of one lead frame 12a.
4 and fix the light emitting diode element 1
4 and a structure in which the top of the other lead frame 12b is connected by a bonding wire 15 and the periphery thereof is sealed with a translucent resin 16.

【０００５】しかしながら、上記発光ダイオード１１
は、リードフレーム１２ａの頂部に設けた凹所１３によ
って、発光ダイオード素子１４から出た光を効果的に上
方向へ導き出すと共に、透光性樹脂１６の頂部が半球形
状に形成されていることから集光作用も期待することが
できるが、この種のリードフレーム型の発光ダイオード
１１は、マザーボードに表面実装することができず、大
型化してしまうといった問題があった。However, the light emitting diode 11
This is because light emitted from the light emitting diode element 14 is effectively guided upward by the recess 13 provided at the top of the lead frame 12a, and the top of the translucent resin 16 is formed in a hemispherical shape. Although a light condensing function can be expected, this type of lead frame type light emitting diode 11 cannot be surface-mounted on a motherboard, and has a problem that it becomes large.

【０００６】そこで本発明は、表面実装型発光ダイオー
ドにおいて、発光ダイオード素子から出た光の集光性を
高めることで、大きな光出力を得ることを目的とする。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to obtain a large light output in a surface mount type light emitting diode by improving the light collecting property of light emitted from the light emitting diode element.

【０００７】[0007]

【課題を解決するための手段】本発明の表面実装型発光
ダイオードは、上記課題を解決するために、発光ダイオ
ード素子の周囲を取り囲むように反射部材を基板上に配
置する一方、発光ダイオード素子の上方を半球形状に形
成した透光性樹脂によって封止したことを特徴とする。In order to solve the above-mentioned problems, a surface-mounted light-emitting diode according to the present invention has a reflection member disposed on a substrate so as to surround a periphery of the light-emitting diode element, while a light-emitting diode element is provided. The upper part is sealed with a translucent resin formed in a hemispherical shape.

【０００８】また、本発明の表面実装型発光ダイオード
の製造方法は、上記課題を解決するために、基板毎にダ
イシングラインが形成され、且つカソード電極パターン
及びアノード電極パターンが連続に形成されている集合
基板の上面に、反射部材を搭載して接着する接着工程
と、集合基板上に接着された各反射部材の中央部で発光
ダイオード素子をカソード電極パターンの上に固着する
ダイボンド工程と、発光ダイオード素子とアノード電極
パターンとを、反射部材を跨ぐようにしてボンディング
ワイヤで接続するワイヤボンド工程と、集合基板の上部
全面にキャスティング又はトランスファモールドによっ
て熱硬化性の透光性樹脂を成形して発光ダイオード素子
やボンディングワイヤを封止する樹脂封止工程と、上記
ダイシングラインに沿って集合基板をカットして一つ一
つの表面実装型発光ダイオードに分割する分割工程とを
備えたことを特徴とする。In order to solve the above-mentioned problems, a method of manufacturing a surface-mounted light-emitting diode according to the present invention includes forming a dicing line for each substrate and continuously forming a cathode electrode pattern and an anode electrode pattern. A bonding step of mounting and bonding a reflective member on the upper surface of the collective substrate, a die bonding step of fixing the light emitting diode element on the cathode electrode pattern at the center of each reflective member bonded on the collective substrate, and a light emitting diode. A wire bonding step of connecting the element and the anode electrode pattern with a bonding wire so as to straddle the reflective member, and forming a thermosetting translucent resin by casting or transfer molding over the entire upper surface of the collective substrate, thereby forming a light emitting diode. Resin sealing process to seal the elements and bonding wires and the above dicing line Characterized by comprising a division step of dividing the surface-mount type light emitting diode of each one by cutting the collective substrate I.

【０００９】[0009]

【発明の実施の形態】以下、添付図面に基づいて本発明
に係る表面実装型発光ダイオードの実施例を詳細に説明
する。図１及び図２は、表面実装型発光ダイオードの第
１実施例を示したものであり、ガラスエポキシなどから
なる基板２１の上面にカソード電極パターン２２とアノ
ード電極パターン２３が形成されている。これらの電極
パターン２２，２３は両側面および四隅に形成されたス
ルーホール２４部を含めて裏面側まで延び、図３に示し
たように、それぞれの裏面電極パターン２２ａ，２３ａ
を形成している。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a surface mount type light emitting diode according to the present invention. 1 and 2 show a first embodiment of a surface mount type light emitting diode. A cathode electrode pattern 22 and an anode electrode pattern 23 are formed on an upper surface of a substrate 21 made of glass epoxy or the like. These electrode patterns 22, 23 extend to the back side including the through holes 24 formed at both side surfaces and four corners, and as shown in FIG. 3, the respective back electrode patterns 22a, 23a
Is formed.

【００１０】カソード電極パターン２２は、図にも示し
たように、中央部まで延びて凸状に形成され、その凸状
部分に発光ダイオード素子２５がダイボンド固着されて
いる。また、この発光ダイオード素子２５を円の中心に
してその周囲を取り囲むように円筒状の反射部材２６が
配置されている。この反射部材２６の内周面２７はすり
ばち状に傾斜しており、発光ダイオード素子２５から側
面方向に出た光２８ａが内周面２７に反射して上方向に
向かうようになっている。As shown in the figure, the cathode electrode pattern 22 extends to the center and is formed in a convex shape, and the light emitting diode element 25 is die-bonded to the convex portion. Further, a cylindrical reflecting member 26 is arranged so that the light emitting diode element 25 is centered on a circle and surrounds the periphery thereof. The inner peripheral surface 27 of the reflecting member 26 is inclined like a slash, so that light 28a emitted from the light emitting diode element 25 in the side direction is reflected on the inner peripheral surface 27 and heads upward.

【００１１】上記発光ダイオード素子２５とアノード電
極パターン２３との間は、前記反射部材２６を跨いでボ
ンディングワイヤ２９によって接続されている。そし
て、これら発光ダイオード素子２５、反射部材２６及び
ボンディングワイヤ２９を透光性樹脂３０によって封止
している。The light emitting diode element 25 and the anode electrode pattern 23 are connected by a bonding wire 29 across the reflecting member 26. Then, the light emitting diode element 25, the reflecting member 26, and the bonding wire 29 are sealed with the light transmitting resin 30.

【００１２】この透光性樹脂３０は、基板２１の外形を
そのまま上方に延ばした直方体形状のベース部３１と、
その上部に形成された半球形状のレンズ部３２とで構成
され、レンズ部３２が上記内周面２７に反射して上方向
に向かう光２８ｂを集光する。これらベース部３１及び
レンズ部３２は、キャスティングやポッティングあるい
はトランスファモールドなどによって一体成形され、レ
ンズ部３２の頂部が発光ダイオード素子２５の真上に位
置している。なお、レンズ部３２での曲率半径は、集光
が得られれば特に制限を受けず、またレンズ部３２を長
円の一部で構成することも可能である。The translucent resin 30 has a rectangular parallelepiped base portion 31 in which the outer shape of the substrate 21 is directly extended upward;
A lens portion 32 having a hemispherical shape formed thereon has a lens portion 32. The lens portion 32 condenses the light 28b reflected on the inner peripheral surface 27 and traveling upward. The base portion 31 and the lens portion 32 are integrally formed by casting, potting, transfer molding, or the like, and the top of the lens portion 32 is located directly above the light emitting diode element 25. Note that the radius of curvature of the lens section 32 is not particularly limited as long as light can be collected, and the lens section 32 may be formed as a part of an ellipse.

【００１３】従って、このような構成からなる表面実装
型発光ダイオードにあっては、発光ダイオード素子２５
から側面方向に出た光２８ａは反射部材２６の内周面２
７に反射して上方に向かう光２８ｂとなり、更に透光性
樹脂３０を通過する際にレンズ部３２によって集光され
るために、上面方向への光出力が強いものとなって明る
い発光が得られる。Therefore, in the light emitting diode of the surface mounting type having such a configuration, the light emitting diode element 25 is used.
The light 28a emitted from the side surface direction from the inner peripheral surface 2 of the reflecting member 26
The light 28b is reflected upward and becomes upward light 28b, and further condensed by the lens portion 32 when passing through the translucent resin 30, so that the light output in the upper surface direction is strong and bright light emission is obtained. Can be

【００１４】なお、図４及び図５は、上記反射部材２６
の他の形状を示したものである。前者は反射部材２６の
全体を漏斗状に形成して内周面２７のみならず外周面３
３にも傾斜を付けたもの、後者は全体を碗状に形成して
湾曲面３４を形成したものであるが、いずれもその内周
面の傾斜によって発光ダイオード素子２５から側面方向
に出た光を上面方向に反射する作用を持っている。ま
た、反射部材２６の内周面２７の角度が基板面に対して
概ね４５゜以下であれば、反射部材２６の全体形状が上
記のものに限定されないのは勿論である。FIGS. 4 and 5 show the reflection member 26.
5 shows another shape. In the former, the entire reflecting member 26 is formed in a funnel shape so that not only the inner peripheral surface 27 but also the outer peripheral surface 3 is formed.
3, the latter is formed in a bowl shape as a whole to form a curved surface 34. In each case, the light emitted from the light emitting diode element 25 in the lateral direction due to the inclination of the inner peripheral surface thereof. Has the function of reflecting light in the upper surface direction. In addition, if the angle of the inner peripheral surface 27 of the reflecting member 26 is approximately 45 ° or less with respect to the substrate surface, it goes without saying that the overall shape of the reflecting member 26 is not limited to the above.

【００１５】図６及び図７は、上記構成からなる表面実
装型発光ダイオードをマザーボード３５に側面実装及び
上面実装した時の正面図である。側面実装する場合には
マザーボード３５の表面に形成されている左右の電極パ
ターン３６ａ，３６ｂ上に表面実装型発光ダイオードを
横向きに載置し、カソード電極パターン２２、アノード
電極パターン２３及びスルーホール２４をマザーボード
３５側の各電極パターン３６ａ，３６ｂに半田３７によ
って接合する。一方、上面に向けて実装する場合にはマ
ザーボード３５側の電極パターン３６ａ，３６ｂ上に表
面実装型発光ダイオードを上向きに載置した後、側面実
装と同様に半田３７で接合する。FIG. 6 and FIG. 7 are front views when the surface-mounted light emitting diode having the above-described configuration is mounted on the motherboard 35 from the side and from the top. In the case of side mounting, surface-mounted light emitting diodes are mounted horizontally on left and right electrode patterns 36a and 36b formed on the surface of the motherboard 35, and the cathode electrode pattern 22, the anode electrode pattern 23, and the through hole 24 are mounted. Each of the electrode patterns 36a and 36b on the motherboard 35 is joined by solder 37. On the other hand, when the light emitting diode is mounted on the upper surface, the surface mounted light emitting diode is placed upward on the electrode patterns 36a and 36b on the motherboard 35 side, and then joined with the solder 37 in the same manner as the side surface mounting.

【００１６】このようにしてマザーボード３５に実装さ
れた表面実装型発光ダイオードは、水平方向、又は垂直
方向に指向性のある明るい光を発することができる。The surface-mounted light emitting diode mounted on the motherboard 35 in this way can emit bright light having directivity in the horizontal or vertical direction.

【００１７】図８は、上記構成からなる表面実装型発光
ダイオードの一製造方法を示したものである。この図に
おいて、符号３８は集合基板であって、基板２１毎にダ
イシングライン３９が形成されている。また、集合基板
３８の上面にはカソード電極パターン２２とアノード電
極パターン２３が連続して形成されると共に、これらの
電極パターン２２，２３に沿って内面メッキが施された
丸孔状スルーホール２４と長孔状スルーホール４３が設
けられている。また、図において、符号４０は、上記集
合基板３８の上に搭載する反射部材２６の集合体であ
る。この集合体４０は、反射部材２６を縦・横方向にブ
リッジ４１によって多数連結したもので、集合基板３８
の上に接着させたのちにブリッジ４１をカットして分割
する。なお、反射部材２６の搭載方法として、上記の集
合体以外に一つ一つ完成された反射部材２６をパーツフ
ィーダ等で自動選別したり、テーピング機から自動マウ
ント機で集合基板３８の所定箇所にダイボンドする方法
があり、いずれの方法でも反射部材２６を搭載すること
ができる。また、上記の反射部材２６は、プラスチック
成形やプレス抜き加工などの多数個取りで別工程で作
り、これを集合基板３８上に搭載する。FIG. 8 shows a method for manufacturing a surface-mounted light emitting diode having the above-described structure. In this drawing, reference numeral 38 denotes an aggregate substrate, and a dicing line 39 is formed for each substrate 21. Further, a cathode electrode pattern 22 and an anode electrode pattern 23 are continuously formed on the upper surface of the collective substrate 38, and a round hole-shaped through-hole 24 having an inner surface plated along the electrode patterns 22 and 23 is formed. An elongated through-hole 43 is provided. In the figure, reference numeral 40 denotes an assembly of the reflection members 26 mounted on the assembly board 38. The assembly 40 is formed by connecting a large number of reflecting members 26 in the vertical and horizontal directions by bridges 41.
Then, the bridge 41 is cut and divided. In addition, as a mounting method of the reflecting member 26, in addition to the above-described assembly, the completed reflecting member 26 is automatically selected one by one using a parts feeder or the like, or a predetermined position of the collecting board 38 is automatically transferred from a taping machine to an automatic mounting machine. There is a method of die bonding, and the reflection member 26 can be mounted by either method. In addition, the above-mentioned reflecting member 26 is formed in a separate process by multiple production such as plastic molding or press punching, and is mounted on the collective substrate 38.

【００１８】集合基板３８の上に反射部材２６を接着し
た後の工程を、以下〜の順に追って図９に基づいて
説明する。 集合基板３８の上に接着した各反射部材２６の中央部
に発光ダイオード素子２５をダイボンドする。 集合基板３８をキュア炉に入れてカソード電極パター
ン２２上の発光ダイオード素子２５を固着する。 カソード電極パターン２２の上に固着された発光ダイ
オード素子２５とアノード電極パターン２３とを、反射
部材２６を跨ぐようにしてボンディングワイヤ２９で接
続する。 集合基板３８の上部全面にトランスファモールド又は
キャスティングあるいはポッティング等の手段によって
熱硬化性の透光性樹脂３０を成形し、発光ダイオード素
子２５やボンディングワイヤ２９を樹脂封止する。この
工程で半球形状のレンズ部３２も一緒に成形する。 集合基板３８に形成されたダイシングライン３９に沿
ってカットし、一つ一つの表面実装型発光ダイオードに
分割する。The process after bonding the reflection member 26 on the collective substrate 38 will be described below with reference to FIG. The light emitting diode element 25 is die-bonded to the central portion of each of the reflection members 26 adhered on the collective substrate 38. The collective substrate 38 is placed in a curing furnace, and the light emitting diode elements 25 on the cathode electrode pattern 22 are fixed. The light emitting diode element 25 fixed on the cathode electrode pattern 22 and the anode electrode pattern 23 are connected by a bonding wire 29 so as to straddle the reflecting member 26. A thermosetting translucent resin 30 is formed on the entire upper surface of the collective substrate 38 by means such as transfer molding, casting, or potting, and the light emitting diode element 25 and the bonding wires 29 are resin-sealed. In this step, the hemispherical lens part 32 is also molded. The substrate is cut along dicing lines 39 formed on the collective substrate 38, and divided into individual surface-mounted light emitting diodes.

【００１９】なお、上述の工程で製造された表面実装型
発光ダイオードをマザーボード３５上に実装する場合に
は、自動マウント機で表面実装型発光ダイオードを一つ
一つ真空吸着してマザーボード３５上に移送する。この
場合、側面実装では表面実装型発光ダイオードの側面を
吸着し、上面実装ではレンズ部３２を吸着してマザーボ
ード３５上に移送する。When mounting the surface-mounted light-emitting diodes manufactured in the above-described steps on the motherboard 35, the surface-mounted light-emitting diodes are vacuum-adsorbed one by one by an automatic mounting machine to be mounted on the motherboard 35. Transfer. In this case, in the case of side mounting, the side surface of the surface mount type light emitting diode is sucked, and in the case of top surface mounting, the lens portion 32 is sucked and transferred onto the motherboard 35.

【００２０】図１０は、本発明に係る表面実装型発光ダ
イオードの第２実施例を示したものである。この実施例
では基板２１の上部を封止している透光性樹脂３０のレ
ンズ部３２の形状が異なっている以外、前記実施例と同
様の構成である。即ち、この実施例における透光性樹脂
３０のレンズ部３２は、上部が水平にカットされた形状
になっている。FIG. 10 shows a second embodiment of the surface mount type light emitting diode according to the present invention. This embodiment has the same configuration as the previous embodiment except that the shape of the lens portion 32 of the translucent resin 30 sealing the upper part of the substrate 21 is different. That is, the lens portion 32 of the translucent resin 30 in this embodiment has a shape in which the upper portion is cut horizontally.

【００２１】このような形状のレンズ部３２を備えた表
面実装型発光ダイオードにあっても、発光ダイオード素
子２５から側面方向に出た光は、反射部材２６によって
上方向に反射され、更にレンズ部３２で集光されるため
に、上面方向への光出力が強いものとなって明るい発光
が得られる。また、このようにレンズ部３２の上部に水
平面４２を形成したことによって、水平面４２での自動
マウント機における真空吸着性が確保されるため、マザ
ーボード３５上への実装がより一層確実なものとなる。Even in a surface mount type light emitting diode having a lens portion 32 having such a shape, light emitted from the light emitting diode element 25 in the lateral direction is reflected upward by the reflecting member 26, and Since the light is condensed at 32, the light output in the upper surface direction becomes strong, and bright light emission is obtained. Further, since the horizontal surface 42 is formed on the upper portion of the lens portion 32 in this manner, the vacuum suction of the automatic mounting machine on the horizontal surface 42 is ensured, so that the mounting on the motherboard 35 is further ensured. .

【００２２】[0022]

【発明の効果】以上説明したように、本発明に係る表面
実装型発光ダイオードによれば、基板上に固着した発光
ダイオード素子の周囲を取り囲むように反射部材を配置
し、更に発光ダイオード素子の上方を半球形状に形成し
た透光性樹脂によって封止したので、発光ダイオード素
子から側面方向に出た光は反射部材の内周面に反射して
上方に向かう光となり、更に透光性樹脂を通過する際に
半球体がレンズの役目をして光を集光するために、上面
方向への光出力が強いものとなって高出力の発光が得ら
れるといった効果がある。As described above, according to the surface-mount type light emitting diode of the present invention, the reflecting member is disposed so as to surround the periphery of the light emitting diode element fixed on the substrate. Is sealed with a translucent resin formed in a hemispherical shape, so that the light emitted from the light emitting diode element in the lateral direction is reflected on the inner peripheral surface of the reflecting member and becomes upward light, and further passes through the translucent resin. In this case, the hemisphere acts as a lens to condense the light, so that the light output in the upper surface direction is strong, and there is an effect that high output light emission can be obtained.

【００２３】また、本発明に係る表面実装型発光ダイオ
ードの製造方法によれば、集合基板上で一括処理する製
造工程を採用したことで、簡単にしかも大量に表面実装
型発光ダイオードを得ることができ、大幅なコストダウ
ンが可能で経済的効果が大である。そして、上面実装と
側面実装が可能な上、自動マウントも可能であるなど、
工数削減や歩留りの向上、更には信頼性の向上なども図
ることができる。Further, according to the method of manufacturing a surface-mounted light-emitting diode according to the present invention, by adopting a manufacturing process of performing batch processing on a collective substrate, it is possible to obtain the surface-mounted light-emitting diode easily and in large quantities. It is possible to greatly reduce costs and has a great economic effect. In addition to being capable of top and side mounting, automatic mounting is also possible,
The number of steps can be reduced, the yield can be improved, and the reliability can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明に係る表面実装型発光ダイオードの一実
施例を示す斜視図である。FIG. 1 is a perspective view showing one embodiment of a surface mount type light emitting diode according to the present invention.

【図２】上記図１のＡ−Ａ線断面図である。FIG. 2 is a sectional view taken along line AA of FIG. 1;

【図３】上記実施例に係る表面実装型発光ダイオードの
下面図である。FIG. 3 is a bottom view of the surface-mounted light emitting diode according to the embodiment.

【図４】反射部材の他の一例を示す斜視図と、断面図で
ある。4A and 4B are a perspective view and a cross-sectional view illustrating another example of the reflection member.

【図５】反射部材のその他の例を示す斜視図と、断面図
である。5A and 5B are a perspective view and a sectional view showing another example of the reflection member.

【図６】上記実施例に係る表面実装型発光ダイオードを
マザーボードに側面実装した時の正面図である。FIG. 6 is a front view when the surface-mounted light emitting diode according to the embodiment is mounted on a side surface of a motherboard.

【図７】上記実施例に係る表面実装型発光ダイオードを
マザーボードに上面実装した時の正面図である。FIG. 7 is a front view when the surface-mount type light emitting diode according to the embodiment is mounted on a mother board on the upper surface.

【図８】集合基板に反射部材の集合体を搭載する時の斜
視説明図である。FIG. 8 is a perspective view illustrating a state in which an assembly of reflection members is mounted on an assembly board.

【図９】上記実施例に係る表面実装型発光ダイオードの
製造工程図である。FIG. 9 is a manufacturing process diagram of the surface-mounted light emitting diode according to the embodiment.

【図１０】本発明に係る表面実装型発光ダイオードの他
の実施例を示す図２と同様の断面図である。FIG. 10 is a sectional view similar to FIG. 2, showing another embodiment of the surface-mounted light emitting diode according to the present invention.

【図１１】従来における表面実装型発光ダイオードの一
例を示す斜視図である。FIG. 11 is a perspective view showing an example of a conventional surface mount light emitting diode.

【図１２】上記図１１のＢ−Ｂ線断面図である。FIG. 12 is a sectional view taken along line BB of FIG. 11;

【図１３】従来における表面実装型発光ダイオードの他
の例を示す斜視図である。FIG. 13 is a perspective view showing another example of a conventional surface mount light emitting diode.

【図１４】上記図１３のＣ−Ｃ線断面図である。FIG. 14 is a sectional view taken along line CC of FIG. 13;

【図１５】従来におけるリードフレーム型発光ダイオー
ドの一例を示す断面図である。FIG. 15 is a cross-sectional view illustrating an example of a conventional lead frame type light emitting diode.

【符号の説明】[Explanation of symbols]

２１ 基板 ２２ カソード電極パターン ２３ アノード電極パターン ２５ 発光ダイオード素子 ２６ 反射部材 ２９ ボンディングワイヤ ３０ 透光性樹脂 ３１ ベース部 ３２ レンズ部 ３８ 集合基板 ３９ ダイシングライン DESCRIPTION OF SYMBOLS 21 Substrate 22 Cathode electrode pattern 23 Anode electrode pattern 25 Light emitting diode element 26 Reflecting member 29 Bonding wire 30 Translucent resin 31 Base part 32 Lens part 38 Assembly board 39 Dicing line

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 基板の上面にカソード電極パターンとア
ノード電極パターンとを設け、カソード電極パターンの
上に導電性接着剤によって発光ダイオード素子を固着す
ると共に、発光ダイオード素子と前記アノード電極パタ
ーンとをボンディングワイヤによって接続し、発光ダイ
オード素子及びボンディングワイヤを透光性樹脂によっ
て封止してなる表面実装型発光ダイオードにおいて、 上記発光ダイオード素子の周囲を取り囲むように反射部
材を基板上に配置する一方、発光ダイオード素子の上方
を半球形状に形成した透光性樹脂によって封止したこと
を特徴とする表面実装型発光ダイオード。1. A cathode electrode pattern and an anode electrode pattern are provided on an upper surface of a substrate, and a light emitting diode element is fixed on the cathode electrode pattern with a conductive adhesive, and the light emitting diode element and the anode electrode pattern are bonded. In a surface-mounted light emitting diode in which a light emitting diode element and a bonding wire are connected by a wire and sealed with a translucent resin, a reflection member is arranged on a substrate so as to surround a periphery of the light emitting diode element. A surface-mounted light-emitting diode, wherein the upper part of the diode element is sealed with a translucent resin formed in a hemispherical shape. 【請求項２】 基板毎にダイシングラインが形成され、
且つカソード電極パターン及びアノード電極パターンが
連続に形成されている集合基板の上面に、反射部材を搭
載して接着する接着工程と、 集合基板上に接着された各反射部材の中央部で発光ダイ
オード素子をカソード電極パターンの上に固着するダイ
ボンド工程と、 発光ダイオード素子とアノード電極パターンとを、反射
部材を跨ぐようにしてボンディングワイヤで接続するワ
イヤボンド工程と、 集合基板の上部全面にキャスティング又はトランスファ
モールドによって熱硬化性の透光性樹脂を成形して発光
ダイオード素子やボンディングワイヤを封止する樹脂封
止工程と、 上記ダイシングラインに沿って集合基板をカットして一
つ一つの表面実装型発光ダイオードに分割する分割工程
とを備えたことを特徴とする表面実装型発光ダイオード
の製造方法。2. A dicing line is formed for each substrate.
And a bonding step of mounting and bonding a reflective member on the upper surface of the collective substrate on which the cathode electrode pattern and the anode electrode pattern are continuously formed, and a light emitting diode element at a central portion of each reflective member bonded on the collective substrate. A die bonding step of fixing the light emitting diode element and the anode electrode pattern with a bonding wire so as to straddle the reflecting member, and a casting or transfer molding on the entire upper surface of the collective substrate. A resin sealing step of molding a thermosetting translucent resin to seal a light emitting diode element and a bonding wire, and cutting a collective substrate along the dicing line to form a surface mount type light emitting diode Surface-mount type light emitting diode, comprising: The method of manufacturing the code.
JP03811497A 1997-02-21 1997-02-21 Surface mount type light emitting diode and manufacturing method thereof Expired - Lifetime JP3797636B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03811497A JP3797636B2 (en) 1997-02-21 1997-02-21 Surface mount type light emitting diode and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03811497A JP3797636B2 (en) 1997-02-21 1997-02-21 Surface mount type light emitting diode and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH10242526A true JPH10242526A (en) 1998-09-11
JP3797636B2 JP3797636B2 (en) 2006-07-19

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Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10290029A (en) * 1997-04-14 1998-10-27 Rohm Co Ltd Led chip component
WO2000079605A1 (en) * 1999-06-23 2000-12-28 Citizen Electronics Co., Ltd. Light emitting diode
DE19947044A1 (en) * 1999-09-30 2001-05-17 Osram Opto Semiconductors Gmbh Surface mount optoelectronic component with reflector and method for producing the same
JP2001230450A (en) * 2000-02-21 2001-08-24 Hiroshi Ninomiya Manufacturing method for surface emitting body
JP2002076443A (en) * 2000-08-29 2002-03-15 Citizen Electronics Co Ltd Reflection cup for led chip
WO2002091478A3 (en) * 2001-05-07 2003-02-20 Osram Opto Semiconductors Gmbh Housing for an optoelectronic component and optoelectronic component
US6897490B2 (en) 2000-04-26 2005-05-24 Osram Opto Semiconductors Gmbh Radiation emitting semiconductor component with luminescent conversion element
KR100604602B1 (en) 2004-05-19 2006-07-24 서울반도체 주식회사 Light emitting diode lens and light emitting diode having the same
JP2007235182A (en) * 2003-07-25 2007-09-13 Seoul Semiconductor Co Ltd Chip light emitting diode
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EP1906221A1 (en) * 2006-09-28 2008-04-02 Lg Electronics Inc. Lens, manufacturing method thereof, and light emitting device package using the same
US7429757B2 (en) 2002-06-19 2008-09-30 Sanken Electric Co., Ltd. Semiconductor light emitting device capable of increasing its brightness
JP2009044112A (en) * 2007-07-13 2009-02-26 Sharp Corp Device loading board, electronic component, light emitting device, liquid crystal backlight device and mounting method of electronic component
JPWO2007060784A1 (en) * 2005-11-28 2009-05-07 株式会社村田製作所 Circuit module manufacturing method and circuit module
CN101471415A (en) * 2007-12-28 2009-07-01 斯坦雷电气株式会社 Semiconductor light-emitting device
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EP1187226B1 (en) * 2000-09-01 2012-12-26 Citizen Electronics Co., Ltd. Surface-mount type light emitting diode and method of manufacturing same
JP2013225713A (en) * 2013-08-08 2013-10-31 Towa Corp Production method of optical device
TWI469383B (en) * 2008-06-03 2015-01-11 A light emitting device and a manufacturing method thereof
JP2018088554A (en) * 2018-02-19 2018-06-07 日亜化学工業株式会社 Light emitting device
US10014455B2 (en) 2014-09-30 2018-07-03 Point Engineering Co., Ltd. Chip substrate comprising cavity with curved surfaces
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JPH10290029A (en) * 1997-04-14 1998-10-27 Rohm Co Ltd Led chip component
US6914267B2 (en) 1999-06-23 2005-07-05 Citizen Electronics Co. Ltd. Light emitting diode
WO2000079605A1 (en) * 1999-06-23 2000-12-28 Citizen Electronics Co., Ltd. Light emitting diode
DE19947044A1 (en) * 1999-09-30 2001-05-17 Osram Opto Semiconductors Gmbh Surface mount optoelectronic component with reflector and method for producing the same
DE19947044B9 (en) * 1999-09-30 2007-09-13 Osram Opto Semiconductors Gmbh Surface-mountable optoelectronic component with reflector and method for producing the same
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JP2001230450A (en) * 2000-02-21 2001-08-24 Hiroshi Ninomiya Manufacturing method for surface emitting body
US6897490B2 (en) 2000-04-26 2005-05-24 Osram Opto Semiconductors Gmbh Radiation emitting semiconductor component with luminescent conversion element
US7078253B2 (en) 2000-04-26 2006-07-18 Osram Opto Semiconductors Gmbh Radiation emitting semiconductor component with luminescent conversion element
EP1277242B1 (en) * 2000-04-26 2018-08-15 OSRAM Opto Semiconductors GmbH Radiation emitting semiconductor component with luminescence-converting element and method of manufacturing the same
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US7319245B2 (en) 2000-04-26 2008-01-15 Osram Gmbh Radiation emitting semiconductor component with luminescent conversion element
JP2002076443A (en) * 2000-08-29 2002-03-15 Citizen Electronics Co Ltd Reflection cup for led chip
EP1187226B1 (en) * 2000-09-01 2012-12-26 Citizen Electronics Co., Ltd. Surface-mount type light emitting diode and method of manufacturing same
WO2002091478A3 (en) * 2001-05-07 2003-02-20 Osram Opto Semiconductors Gmbh Housing for an optoelectronic component and optoelectronic component
US7429757B2 (en) 2002-06-19 2008-09-30 Sanken Electric Co., Ltd. Semiconductor light emitting device capable of increasing its brightness
JP2007235182A (en) * 2003-07-25 2007-09-13 Seoul Semiconductor Co Ltd Chip light emitting diode
CN100361321C (en) * 2003-10-15 2008-01-09 陈聪欣 Method for controlling crawling glue phenomenon in preparation process of light emitting diode sealing glue
KR100604602B1 (en) 2004-05-19 2006-07-24 서울반도체 주식회사 Light emitting diode lens and light emitting diode having the same
JP4816647B2 (en) * 2005-11-28 2011-11-16 株式会社村田製作所 Circuit module manufacturing method and circuit module
JPWO2007060784A1 (en) * 2005-11-28 2009-05-07 株式会社村田製作所 Circuit module manufacturing method and circuit module
US7733573B2 (en) 2006-09-28 2010-06-08 Lg Electronics Inc. Lens, manufacturing method thereof and light emitting device package using the same
EP1906221A1 (en) * 2006-09-28 2008-04-02 Lg Electronics Inc. Lens, manufacturing method thereof, and light emitting device package using the same
JP2009044112A (en) * 2007-07-13 2009-02-26 Sharp Corp Device loading board, electronic component, light emitting device, liquid crystal backlight device and mounting method of electronic component
CN101471415A (en) * 2007-12-28 2009-07-01 斯坦雷电气株式会社 Semiconductor light-emitting device
JP2009164176A (en) * 2007-12-28 2009-07-23 Stanley Electric Co Ltd Semiconductor light-emitting apparatus
TWI469383B (en) * 2008-06-03 2015-01-11 A light emitting device and a manufacturing method thereof
JP2011137896A (en) * 2009-12-26 2011-07-14 Asahi Rubber Inc Lens array sheet and dicing method for the same
JP2011171765A (en) * 2011-05-24 2011-09-01 Towa Corp Optical device and method for assembling the same
CN110085578B (en) * 2013-03-13 2023-05-05 亮锐控股有限公司 Packaged LED lens with bottom reflector
CN110085578A (en) * 2013-03-13 2019-08-02 亮锐控股有限公司 Encapsulation LED lens with bottom reflector
JP2013225713A (en) * 2013-08-08 2013-10-31 Towa Corp Production method of optical device
US10014455B2 (en) 2014-09-30 2018-07-03 Point Engineering Co., Ltd. Chip substrate comprising cavity with curved surfaces
JP2018088554A (en) * 2018-02-19 2018-06-07 日亜化学工業株式会社 Light emitting device

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