JP2018088554A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
JP2018088554A
JP2018088554A JP2018026787A JP2018026787A JP2018088554A JP 2018088554 A JP2018088554 A JP 2018088554A JP 2018026787 A JP2018026787 A JP 2018026787A JP 2018026787 A JP2018026787 A JP 2018026787A JP 2018088554 A JP2018088554 A JP 2018088554A
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JP
Japan
Prior art keywords
light
light emitting
emitting element
emitting device
resin
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JP2018026787A
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JP6521119B2 (en
Inventor
祐太 岡
Yuta Oka
祐太 岡
玉置 寛人
Hiroto Tamaoki
寛人 玉置
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device which can be reduced in size.SOLUTION: A light emitting device includes a light emitting element 1; a light reflection member 2 which is arranged to cover a side face of the light emitting element 1 and expose a top surface of the light emitting element 1; a frame body 4 which is formed on the light reflection member 2 to surround an outer periphery of the top surface of the light emitting element 1; a translucent member 3 arranged in the frame body 4; and a translucent sealing member 5 which covers the light reflection member 2, frame body 4, and the translucent member 3. The sealing member 5 includes a flange 7 which covers a part of the frame body 4.SELECTED DRAWING: Figure 1

Description

本開示は、発光装置に関する。   The present disclosure relates to a light emitting device.

発光素子の上方にレンズを形成することで、光取り出し効率を高めた発光装置が知られ
ている。例えば、特許文献1に記載の発光装置では、特許文献1の図4で示されるように
、枠体で囲まれた発光部を、レンズ径に対してより小さくすることで、レンズと空気層と
の界面に入射する光線の入射角を小さくすることができ、光の取り出し効率の向上を図っ
ている。
2. Description of the Related Art A light emitting device in which light extraction efficiency is improved by forming a lens above a light emitting element is known. For example, in the light emitting device described in Patent Document 1, as shown in FIG. 4 of Patent Document 1, the light emitting unit surrounded by the frame is made smaller than the lens diameter, so that the lens, the air layer, and The incident angle of the light beam incident on the interface can be reduced, and the light extraction efficiency is improved.

特開2012−156442号公報JP 2012-156442 A

近年、発光装置が搭載される器具は小型化の傾向にあり、搭載される発光装置もさらな
る小型化が求められている。そこで、本発明では、小型化が実現可能な発光装置を提供す
ることを目的とする。
In recent years, appliances on which light-emitting devices are mounted tend to be miniaturized, and the light-emitting devices to be mounted are also required to be further downsized. Therefore, an object of the present invention is to provide a light emitting device that can be miniaturized.

本発明の一実施形態に係る発光装置は、発光素子と、前記発光素子の側面を被覆し、前
記発光素子の上面を露出して配置された光反射部材と、前記光反射部材上であって、前記
上面の外周を取り囲むように形成された枠体と、前記枠体内に配置された透光性部材と、
前記光反射部材、前記枠体、及び前記透光性部材を被覆する透光性の封止部材と、を有し
、前記封止部材は鍔部を有し、前記枠体の一部が前記鍔部で被覆される。
A light emitting device according to an embodiment of the present invention includes a light emitting element, a light reflecting member that covers a side surface of the light emitting element, and that exposes an upper surface of the light emitting element, and on the light reflecting member. A frame formed so as to surround the outer periphery of the upper surface, and a translucent member disposed in the frame,
A light-transmitting sealing member that covers the light-reflecting member, the frame, and the light-transmitting member, the sealing member has a flange, and a part of the frame is the Covered with buttock.

本発明に係る実施形態によれば、小型化が可能な発光装置を提供することができる。   According to the embodiment of the present invention, it is possible to provide a light emitting device that can be miniaturized.

実施形態1の発光装置の上面図である。2 is a top view of the light emitting device according to Embodiment 1. FIG. 図1のA−A’線についての断面図である。It is sectional drawing about the A-A 'line | wire of FIG. 実施形態1の発光装置の下面図である。3 is a bottom view of the light emitting device according to Embodiment 1. FIG. 図2の一部拡大図である。FIG. 3 is a partially enlarged view of FIG. 2. 実施形態1の発光装置の製造方法を示す図であり、図5(a)は上面図、図5(b)は側面図である。It is a figure which shows the manufacturing method of the light-emitting device of Embodiment 1, Fig.5 (a) is a top view, FIG.5 (b) is a side view. 実施形態1の発光装置の製造方法を示す図であり、図6(a)は上面図、図6(b)は側面図である。It is a figure which shows the manufacturing method of the light-emitting device of Embodiment 1, Fig.6 (a) is a top view, FIG.6 (b) is a side view. 実施形態1の発光装置の製造方法を示す図であり、図7(a)は上面図、図7(b)は断面図である。FIGS. 7A and 7B are diagrams illustrating a method for manufacturing the light-emitting device of Embodiment 1, in which FIG. 7A is a top view and FIG. 7B is a cross-sectional view. 実施形態1の発光装置の製造方法を示す図であり、図8(a)は上面図、図8(b)は断面図である。It is a figure which shows the manufacturing method of the light-emitting device of Embodiment 1, FIG. 8 (a) is a top view, FIG.8 (b) is sectional drawing. 実施形態1の発光装置の製造方法を示す図であり、図9(a)は上面図、図9(b)は側面図である。It is a figure which shows the manufacturing method of the light-emitting device of Embodiment 1, Fig.9 (a) is a top view, FIG.9 (b) is a side view. 実施形態1の発光装置の製造方法を示す図であり、図10(a)は上面図、図10(b)は側面図である。It is a figure which shows the manufacturing method of the light-emitting device of Embodiment 1, Fig.10 (a) is a top view, FIG.10 (b) is a side view. 実施形態1の発光装置の配線の例を示す図である。4 is a diagram illustrating an example of wiring of the light emitting device of Embodiment 1. FIG. 実施形態2の発光装置の断面図を示す。Sectional drawing of the light-emitting device of Embodiment 2 is shown. 実施形態2の発光装置の製造方法を示す図である。It is a figure which shows the manufacturing method of the light-emitting device of Embodiment 2. 実施形態3の発光装置を示す図である。It is a figure which shows the light-emitting device of Embodiment 3.

以下、図面に基づいて本発明の実施形態を詳細に説明する。なお、以下の説明では、必
要に応じて特定の方向や位置を示す用語(例えば、「上」、「下」、「右」、「左」およ
び、それらの用語を含む別の用語)を用いる。それらの用語の使用は図面を参照した発明
の理解を容易にするためであって、それらの用語の意味によって本発明の技術的範囲が限
定されるものではない。また、複数の図面に表れる同一符号の部分は同一の部分又は部材
を示す。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, terms indicating specific directions and positions (for example, “up”, “down”, “right”, “left” and other terms including those terms) are used as necessary. . The use of these terms is to facilitate understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meaning of these terms. Moreover, the part of the same code | symbol which appears in several drawing shows the same part or member.

<実施形態1>
図1は、本発明に係る実施形態1の発光装置100の上面図であり、図2は、図1のA
−A線についての断面図であり、図3は、実施形態1の発光装置の下面図である。
本実施形態の発光装置は、上面を発光面とし、発光面の反対側の下面に電極が設けられ
た発光素子1と、発光素子1の側面を被覆し、発光素子1の上面を露出して配置された光
反射部材2と、光反射部材2の上であって、発光素子1の上面の外周を取り囲むように形
成された枠体4とを含む。さらに、発光装置100は、枠体4内に配置された、すなわち
枠体4で囲まれた領域に充填された透光性部材3を有し、光反射部材2、枠体4、及び透
光性部材3を被覆する封止部材5を有する。
<Embodiment 1>
FIG. 1 is a top view of a light emitting device 100 according to Embodiment 1 of the present invention, and FIG.
FIG. 3 is a cross-sectional view taken along line -A, and FIG. 3 is a bottom view of the light emitting device according to the first embodiment.
The light emitting device of this embodiment has a light emitting surface as an upper surface, a light emitting element 1 provided with an electrode on the lower surface opposite to the light emitting surface, a side surface of the light emitting element 1 and a top surface of the light emitting element 1 exposed. The light reflection member 2 is disposed, and the frame 4 is formed on the light reflection member 2 so as to surround the outer periphery of the upper surface of the light emitting element 1. Furthermore, the light emitting device 100 includes the light transmissive member 3 disposed in the frame body 4, that is, filled in the region surrounded by the frame body 4, and includes the light reflecting member 2, the frame body 4, and the light transmissive member. The sealing member 5 that covers the conductive member 3 is provided.

実施形態1の発光装置100において、発光素子1は、例えば透光性の絶縁基板上に半
導体層が積層され、半導体層側の一面に少なくとも一対の正負の電極が形成されたもので
ある。光反射部材2は、少なくとも発光素子1の側面を覆うように設けられる。
In the light emitting device 100 according to the first embodiment, the light emitting element 1 includes, for example, a semiconductor layer stacked on a translucent insulating substrate, and at least a pair of positive and negative electrodes formed on one surface of the semiconductor layer side. The light reflecting member 2 is provided so as to cover at least the side surface of the light emitting element 1.

本実施形態では、図2に示すように、発光素子1は、基板8の上にバンプ等の接合材料
によってフリップチップ実装されており、その側面が光反射部材2に接触して被覆されて
いる。基板8の上面には配線が設けられており、配線9と発光素子1の電極とが接合部材
を介して接合される。発光素子1は平面形状が略正方形であり、図1に示すように、2×
2の行列状(格子状)に4つ配置されている。
In the present embodiment, as shown in FIG. 2, the light emitting element 1 is flip-chip mounted on a substrate 8 with a bonding material such as a bump, and the side surface of the light emitting element 1 is in contact with and covered with the light reflecting member 2. . A wiring is provided on the upper surface of the substrate 8, and the wiring 9 and the electrode of the light emitting element 1 are bonded to each other through a bonding member. The light-emitting element 1 has a substantially square planar shape, and as shown in FIG.
Four are arranged in a matrix of 2 (lattice).

隣接する発光素子間の間隔は、特に限定されるものではないが、例えば発光素子の一辺
の長さよりも狭いことが好ましい。特に、1〜300μm、さらに好ましくは50〜10
0μmとすることにより、蛍光体や拡散材を用いて発光素子間の非発光領域に光を拡散さ
せることができる。このため、隣接する発光素子間には光反射部材2が配置されているこ
とが好ましい。
The interval between adjacent light emitting elements is not particularly limited, but is preferably narrower than the length of one side of the light emitting element, for example. In particular, 1 to 300 μm, more preferably 50 to 10
By setting the thickness to 0 μm, it is possible to diffuse light into a non-light emitting region between the light emitting elements using a phosphor or a diffusing material. For this reason, it is preferable that the light reflecting member 2 is disposed between adjacent light emitting elements.

光反射部材2は、発光素子1の上面を除く側面全てを被覆することが好ましい。発光素
子間での光吸収を抑制するためである。また、光反射部材は、その上面が平坦であること
が好ましい。発光素子の上面と略面一であってもよいし、発光素子の上面よりも高い位置
にその上面が配置されていてもよい。ここでの面一とは、樹脂の自重によってその表面に
意図しない若干の凹部が形成されることが許容され、つまり、数10μm程度の高低差が
許容されることを意図する。さらに光反射部材2は、基板8上に載置された、発光素子1
以外の部品(例えば図1に示す保護素子16など)を埋設していてもよい。基板8の下面
には、図3に示すように少なくとも一対の端子電極18が設けられる。この一対の端子電
極の形状を、例えば切り欠き等を用いて若干異ならせることで、極性を表示するためのア
ノードマークやカソードマークとしてもよい。
It is preferable that the light reflecting member 2 covers all the side surfaces except the upper surface of the light emitting element 1. This is for suppressing light absorption between the light emitting elements. Moreover, it is preferable that the upper surface of a light reflection member is flat. The upper surface of the light emitting element may be substantially flush with the upper surface of the light emitting element, or the upper surface may be disposed at a position higher than the upper surface of the light emitting element. Here, it is intended that some unintended recesses are formed on the surface due to the weight of the resin, that is, a height difference of about several tens of μm is allowed. Further, the light reflecting member 2 is mounted on the substrate 8 and the light emitting element 1.
Other parts (for example, the protection element 16 shown in FIG. 1) may be embedded. At least a pair of terminal electrodes 18 are provided on the lower surface of the substrate 8 as shown in FIG. The shape of the pair of terminal electrodes may be slightly different by using, for example, a notch or the like, thereby forming an anode mark or a cathode mark for displaying the polarity.

光反射部材2の上面には、枠体4が形成される。枠体4は、発光素子1の上面の外周を
取り囲む。複数の発光素子1が用いられる場合には、図1に示すように複数の発光素子の
最外周を取り囲むように配置される。発光素子の上面のすべてが、枠内に露出するように
形成されることが好ましく、例えば最も外周に位置する発光素子1の上面の若干外側に配
置し、枠内の最外側に光反射部材2の上面が露出されていることが好ましい。発光素子の
外縁と枠体の内壁との距離は、例えば300μm以下、0〜100μm程度が好ましい。
これにより発光領域を限定することで高輝度化を実現することができる。
A frame 4 is formed on the upper surface of the light reflecting member 2. The frame body 4 surrounds the outer periphery of the upper surface of the light emitting element 1. When a plurality of light emitting elements 1 are used, they are arranged so as to surround the outermost periphery of the plurality of light emitting elements as shown in FIG. It is preferable that the entire top surface of the light emitting element is formed so as to be exposed in the frame. For example, the light reflecting element 2 is disposed slightly outside the top surface of the light emitting element 1 located on the outermost periphery. It is preferable that the upper surface of is exposed. The distance between the outer edge of the light emitting element and the inner wall of the frame is preferably, for example, 300 μm or less and about 0 to 100 μm.
Thus, high luminance can be realized by limiting the light emitting region.

枠体4は、発光素子の上面に外縁に沿って形成されることが好ましい。枠体4は、光反
射性を有する物質を混合した樹脂材料により形成することができる。
The frame body 4 is preferably formed on the upper surface of the light emitting element along the outer edge. The frame 4 can be formed of a resin material in which a substance having light reflectivity is mixed.

透光性部材3は、枠体4内、すなわち枠体4によって取り囲まれて形成される凹部内に
配置される。本実施形態では、凹部は、発光素子1の上面及び光反射部材2の上面により
形成される底面と、枠体4によって形成される内側面を有しており、この凹部内に透光性
部材3が配置される。
The translucent member 3 is disposed in the frame body 4, that is, in a recess formed by being surrounded by the frame body 4. In the present embodiment, the concave portion has a bottom surface formed by the upper surface of the light emitting element 1 and the upper surface of the light reflecting member 2 and an inner surface formed by the frame body 4. 3 is arranged.

透光性部材3は、樹脂材料に蛍光体等の波長変換物質が含有されたものを好適に用いる
ことができる。このような樹脂材料を枠体4内に滴下(ポッティング)することで透光性
部材3を形成することができる。蛍光体を用いる場合、波長変換時に生じる蛍光体からの
発熱を効率よく放熱するために、蛍光体は発光素子1の上面と接していることが好ましく
、よって蛍光体は凹部の底面に、すなわち発光素子側に沈降配置されていることが好まし
い。
As the translucent member 3, a resin material containing a wavelength conversion substance such as a phosphor can be suitably used. The translucent member 3 can be formed by dropping (potting) such a resin material into the frame 4. When the phosphor is used, it is preferable that the phosphor is in contact with the upper surface of the light-emitting element 1 in order to efficiently dissipate heat generated from the phosphor generated at the time of wavelength conversion. It is preferable that they are disposed by sedimentation on the element side.

図4は、図2の発光素子1近傍の部分拡大図である。図4に示すように、枠体4内にお
いて、透光性部材3は、蛍光体層14と拡散層12の2層構造とされていることが好まし
い。このような2層構造は、拡散材と、その拡散材よりも比重の大きい蛍光体を含有させ
た樹脂材料を枠体4内に滴下し、蛍光体を沈降させることで形成することができる。比重
の小さい拡散材は、蛍光体の上方に分散して配置される。沈降は、遠心沈降等の強制沈降
であってもよいし、自然沈降させてもよい。拡散材を用いることにより、隣接する発光素
子間の暗部を目立ちにくくさせ、点光源に近付けることで、光質を向上させることができ
る。
FIG. 4 is a partially enlarged view of the vicinity of the light emitting element 1 of FIG. As shown in FIG. 4, it is preferable that the translucent member 3 has a two-layer structure of a phosphor layer 14 and a diffusion layer 12 in the frame body 4. Such a two-layer structure can be formed by dropping a resin material containing a diffusing material and a phosphor having a specific gravity larger than that of the diffusing material into the frame body 4 and allowing the phosphor to settle. The diffusing material having a small specific gravity is dispersed and arranged above the phosphor. The sedimentation may be forced sedimentation such as centrifugal sedimentation, or natural sedimentation. By using the diffusing material, it is possible to improve the light quality by making the dark portion between adjacent light emitting elements less noticeable and approaching the point light source.

封止部材5は、発光素子からの光、すなわち透光性部材3を通って出射される光を効率
よく取り出すために設けられる透光性部材である。封止部材5は、光反射部材2、枠体4
、及び透光性部材3を被覆している。また、封止部材5は、レンズ部6とレンズ部6の下
方に、レンズの外周側に延出されてなる鍔部7とを有する。
The sealing member 5 is a translucent member provided to efficiently extract light from the light emitting element, that is, light emitted through the translucent member 3. The sealing member 5 includes the light reflecting member 2 and the frame body 4.
And the translucent member 3 are covered. Further, the sealing member 5 includes a lens portion 6 and a flange portion 7 that extends to the outer peripheral side of the lens below the lens portion 6.

図1に示すように、枠体4の一部は、鍔部7で被覆されている。光取り出し効率を向上
させるためには、レンズ部6は発光素子から出射された光が、レンズ部の界面で全反射し
ない程度に大きく設定することが好ましい。しかし、発光装置を小型化しようとすると、
レンズを大きくするには限界がある。そこで、枠体4の一部が鍔部7で被覆されるように
する。言い換えると、平面視において、枠体4はレンズ部6と鍔部7とに跨って配置され
ている。さらに好ましくは、図1に示すように、枠体4の外縁の一部が鍔部7に被覆され
ているのに対し、枠体4の内側面、すなわち透光性部材3の外縁は、そのすべてがレンズ
部6の下に配置される。これにより、光取り出し効率をなるべく低下させずに小型化を実
現することができる。
また、基板8の外縁と封止部材5の外縁が上面視にて一致するように、基板8と封止部
材5の端面が面一とされていることが好ましい。
As shown in FIG. 1, a part of the frame body 4 is covered with a collar portion 7. In order to improve the light extraction efficiency, it is preferable to set the lens unit 6 so large that the light emitted from the light emitting element is not totally reflected at the interface of the lens unit. However, when trying to reduce the size of the light emitting device,
There is a limit to enlarging the lens. Therefore, a part of the frame body 4 is covered with the collar portion 7. In other words, the frame body 4 is disposed across the lens portion 6 and the collar portion 7 in plan view. More preferably, as shown in FIG. 1, a part of the outer edge of the frame body 4 is covered with the collar portion 7, whereas the inner surface of the frame body 4, that is, the outer edge of the translucent member 3 is Everything is arranged under the lens unit 6. As a result, it is possible to reduce the size without reducing the light extraction efficiency as much as possible.
Moreover, it is preferable that the end surfaces of the substrate 8 and the sealing member 5 are flush with each other so that the outer edge of the substrate 8 and the outer edge of the sealing member 5 coincide with each other when viewed from above.

<実施形態1の発光装置の製造方法>
実施形態1に係る発光装置の製造方法は、上述した実施形態1の発光装置を製造する方
法であって、発光素子載置工程と、光反射部材形成工程と、枠体形成工程と、透光性部材
形成工程と、封止部材形成工程と、を含む。以下、図5〜10を用いて説明する。
<The manufacturing method of the light-emitting device of Embodiment 1>
The manufacturing method of the light-emitting device according to Embodiment 1 is a method of manufacturing the light-emitting device of Embodiment 1 described above, and includes a light-emitting element placing step, a light reflecting member forming step, a frame body forming step, and a light transmitting property. An adhesive member forming step and a sealing member forming step. Hereinafter, description will be given with reference to FIGS.

(発光素子載置工程)
発光素子載置工程では、図5に示すように、基板81を準備し、基板81に発光素子1
を載置する。基板81は板状であり、上面に配線9が形成され、下面に端子電極18とな
る金属部材が形成されている。配線と端子電極は、基板内部のビア等によって電気的に接
続されている。図5(a)は上面図であり、図5(b)は側面図である。次に、図6(a
)、図6(b)に示すように基板81の上面に、接合部材を介して発光素子1をフリップ
チップ実装する。図6(a)は上面図であり、図6(b)は側面図である。なお、発光素
子1と基板81の配線9との接続はバンプ、半田、導電ペースト、異方性導電ペースト等
の接合部材を用いることができる。なお、発光素子1の載置前、または載置後に、保護素
子16を実装してもよい。通常、基板81は後の工程で分割するまでは、複数の基板8が
連なった集合体とされている。ここでは、ふたつの基板8が連なった図面を用いて説明す
る。
発光素子1を基板上に載置した後、光反射部材2との応力を緩和するため、任意に基板
の上面と発光素子1の下面との間にアンダーフィルを充填してもよい。アンダーフィルを
形成することで、基板の上面と発光素子の下面の間に光反射部材2が入らないため、信頼
性が向上する。光反射部材2が発光素子1の下面に入ると、光反射部材2が熱により膨張
し、発光素子1を持ちあげるおそれがあるためである。また、アンダーフィルにも光反射
機能を持たせることで、基板8方向に出射される光を反射することができるため好ましい
(Light emitting element mounting process)
In the light emitting element mounting step, as shown in FIG. 5, a substrate 81 is prepared, and the light emitting element 1 is mounted on the substrate 81.
Is placed. The substrate 81 is plate-shaped, and the wiring 9 is formed on the upper surface, and the metal member that becomes the terminal electrode 18 is formed on the lower surface. The wiring and the terminal electrode are electrically connected by a via or the like inside the substrate. FIG. 5A is a top view and FIG. 5B is a side view. Next, FIG.
6 (b), the light-emitting element 1 is flip-chip mounted on the upper surface of the substrate 81 via a bonding member. FIG. 6A is a top view, and FIG. 6B is a side view. Note that a bonding member such as a bump, solder, a conductive paste, or an anisotropic conductive paste can be used for connection between the light emitting element 1 and the wiring 9 of the substrate 81. Note that the protection element 16 may be mounted before or after the light emitting element 1 is placed. Usually, the substrate 81 is an aggregate of a plurality of substrates 8 until it is divided in a later process. Here, a description will be given with reference to a drawing in which two substrates 8 are connected.
After the light emitting element 1 is placed on the substrate, an underfill may be optionally filled between the upper surface of the substrate and the lower surface of the light emitting element 1 in order to relieve stress with the light reflecting member 2. By forming the underfill, since the light reflecting member 2 does not enter between the upper surface of the substrate and the lower surface of the light emitting element, the reliability is improved. This is because when the light reflecting member 2 enters the lower surface of the light emitting element 1, the light reflecting member 2 may expand due to heat, and the light emitting element 1 may be lifted. In addition, it is preferable to provide the underfill with a light reflecting function because light emitted in the direction of the substrate 8 can be reflected.

発光素子1の配列は、用いる発光素子のサイズや、最終的に得たい発光装置の仕様によ
って任意に決定することができる、例えば、格子状に配列して、複数の発光素子の上面が
ひとつの発光領域を形成するようにすることができる。
The arrangement of the light-emitting elements 1 can be arbitrarily determined according to the size of the light-emitting elements to be used and the specifications of the light-emitting device to be finally obtained. A light emitting region can be formed.

(光反射部材形成工程)
次に、図7に示すように、発光素子1の上面が露出するように、発光素子1の側面を光
反射部材2で被覆する。図7(a)は上面図であり、図7(b)は図7(a)におけるB
−B線断面図である。保護素子16の上面は、発光素子1の上面よりも低い位置に配置さ
れており、保護素子16はその全てが光反射部材2に埋設されることが好ましい。これに
より、保護素子16による光吸収を抑制することができる。発光素子1の上面と光反射部
材2の上面は同じ高さ、すなわち面一とされることが好ましい。
光反射部材2は、集合基板の外周にダム材を設け、ダム材内に光反射性部材を含有した
樹脂材料を流し込むことで形成することができる。隣接する発光素子1の間に確実に充填
されるように、粘度等を調整する。
(Light reflecting member forming step)
Next, as shown in FIG. 7, the side surface of the light emitting element 1 is covered with a light reflecting member 2 so that the upper surface of the light emitting element 1 is exposed. FIG. 7A is a top view, and FIG. 7B is B in FIG.
FIG. The upper surface of the protection element 16 is disposed at a position lower than the upper surface of the light emitting element 1, and it is preferable that the entire protection element 16 is embedded in the light reflecting member 2. Thereby, light absorption by the protection element 16 can be suppressed. The upper surface of the light emitting element 1 and the upper surface of the light reflecting member 2 are preferably the same height, that is, flush with each other.
The light reflecting member 2 can be formed by providing a dam material on the outer periphery of the collective substrate and pouring a resin material containing the light reflecting member into the dam material. The viscosity or the like is adjusted so as to be surely filled between the adjacent light emitting elements 1.

(枠体形成工程)
次に、図8に示すように、発光素子1の上面を取り囲むように枠体4を形成する。図8
(a)は上面図であり、図8(b)は図8(a)のC−C線断面図である。枠体4は、例
えば、樹脂吐出装置を用いて光反射部材2上に樹脂を環状に吐出させて形成することがで
きる。その他にも、予め金型等で成形した枠体を光反射部材2の上に転写したり貼り合せ
たり、インクジェットや3Dプリンター等を用いて形成してもよい。本実施形態では発光
素子1の上面の外縁の100μm程度外側を、発光素子1の上面の外縁に沿って形成する
ことで、平面視において四隅が丸みを帯びた四角環状に形成する。
(Frame forming process)
Next, as shown in FIG. 8, the frame body 4 is formed so as to surround the upper surface of the light emitting element 1. FIG.
(A) is a top view, FIG.8 (b) is CC sectional view taken on the line of Fig.8 (a). The frame body 4 can be formed, for example, by discharging resin in a ring shape on the light reflecting member 2 using a resin discharge device. In addition, a frame body formed in advance with a mold or the like may be transferred or pasted onto the light reflecting member 2, or may be formed using an ink jet or a 3D printer. In this embodiment, the outer edge of the upper surface of the light emitting element 1 is formed about 100 μm along the outer edge of the upper surface of the light emitting element 1 to form a square ring with rounded four corners in plan view.

(透光性部材形成工程)
次に、図9に示すように、枠体4内に透光性部材3を配置する。図9(a)は上面図で
あり、図9(b)は図9(a)のD−D線断面図である。本実施形態では、蛍光体及び拡
散材を含有させた樹脂材料を枠体4で取り囲まれた領域にポッティングして、枠体4内に
充填する。その後、自然沈降させることにより、蛍光体が発光素子1の上面に接触するよ
うに沈降配置させることで、発光素子近傍に蛍光体層14、その上に拡散層12を形成す
る(図4参照)。
(Translucent member forming step)
Next, as shown in FIG. 9, the translucent member 3 is disposed in the frame 4. FIG. 9A is a top view, and FIG. 9B is a cross-sectional view taken along the line DD in FIG. 9A. In the present embodiment, a resin material containing a phosphor and a diffusing material is potted in a region surrounded by the frame body 4 to fill the frame body 4. Thereafter, by spontaneous sedimentation, the phosphor is placed so as to be in contact with the upper surface of the light emitting element 1, thereby forming the phosphor layer 14 in the vicinity of the light emitting element and the diffusion layer 12 thereon (see FIG. 4). .

(封止部材形成工程)
次に、図10に示すように、光反射部材2、枠体4、及び透光性部材3の上に封止部材
5を形成する。図10(a)は上面図であり、図10(b)は図10(a)の側面図であ
る。なお、説明をわかりやすくするために、光反射部材2を透過して示すことで、発光素
子1や保護素子16が見えるように示している。封止部材5の形成方法としては、トラン
スファー成形や圧縮成形、樹脂の塗布(ポッティング)、キャスティングケースによる成
形等、種々の方法を用いることができる。ここで、封止部材5は、レンズ部6と鍔部7を
有するように形成され、鍔部7の下部に枠体4の一部が位置するように配置される。さら
に、圧縮成形により封止部材5を形成する際に、鍔部7にエアベント20を形成すること
が好ましい。これにより、レンズ形状の安定化ができる。
(Sealing member forming step)
Next, as illustrated in FIG. 10, the sealing member 5 is formed on the light reflecting member 2, the frame body 4, and the translucent member 3. FIG. 10A is a top view, and FIG. 10B is a side view of FIG. For easy understanding, the light reflecting member 2 is shown so that the light emitting element 1 and the protective element 16 can be seen. As a method for forming the sealing member 5, various methods such as transfer molding, compression molding, resin application (potting), molding with a casting case, and the like can be used. Here, the sealing member 5 is formed so as to have the lens portion 6 and the flange portion 7, and is disposed so that a part of the frame body 4 is positioned below the flange portion 7. Furthermore, when forming the sealing member 5 by compression molding, it is preferable to form the air vent 20 in the collar part 7. Thereby, the lens shape can be stabilized.

(個片化工程)
最後に、隣接するレンズ部6とレンズ部6の間(図10に示すX−X線)の鍔部7をダ
イシング等の方法により切断することで、実施形態1の発光装置を得る。これにより、封
止部材5と光反射部材2と基板8の端面が同一面となる。切断面がそのまま発光装置の外
縁となるため取れ数を向上させることができる。
(Individualization process)
Finally, the light emitting device of the first embodiment is obtained by cutting the flange portion 7 between the adjacent lens portions 6 and the lens portions 6 (XX line shown in FIG. 10) by a method such as dicing. Thereby, the end surface of the sealing member 5, the light reflection member 2, and the board | substrate 8 becomes the same surface. Since the cut surface becomes the outer edge of the light emitting device as it is, the number of removal can be improved.

本実施形態では、図5に示すように、搭載される4つの発光素子の発光装置内での回路
が、2直列2並列になるような配線9のパターンとしているが、所望の回路に合わせて適
宜配線のパターンを変更することができることは言うまでもない。図11に、4つの発光
素子を直列接続する際の配線9の例を示す。なお、搭載される発光素子の数は、1つであ
ってもよい。
In the present embodiment, as shown in FIG. 5, the circuit in the light emitting device of the four light emitting elements to be mounted has a pattern of wiring 9 that is two series and two parallel, but according to a desired circuit. Needless to say, the wiring pattern can be changed as appropriate. FIG. 11 shows an example of the wiring 9 when four light emitting elements are connected in series. Note that the number of mounted light emitting elements may be one.

<実施形態2>
実施形態2の発光装置200は、図12に示すように、発光素子1を載置する基板を有
さない点で、実施形態1の発光装置100と異なっている。基板を有さないため、光反射
部材2の下面から、電極21が露出されている。
以上のように構成された実施形態2の発光装置は、基板を有さないため、薄型化および
小型化できる。また、小型化により高密度実装が可能となる。
<Embodiment 2>
As shown in FIG. 12, the light emitting device 200 of the second embodiment is different from the light emitting device 100 of the first embodiment in that it does not have a substrate on which the light emitting element 1 is placed. Since there is no substrate, the electrode 21 is exposed from the lower surface of the light reflecting member 2.
Since the light-emitting device of Embodiment 2 configured as described above does not have a substrate, it can be reduced in thickness and size. In addition, high-density mounting is possible by downsizing.

<実施形態2の発光装置の製造方法>
実施形態2に係る発光装置の製造方法は、実施形態1に係る発光装置の製造方法に比較
して、図13に示すように、基板8に替えて支持体24を使用する点以外は実施形態1の
製造方法と同様に構成される。そして、封止部材5を形成した後に支持体24を図13の
点線で示すように、剥離(除去)する点以外は実施形態1の製造方法と同様にして形成す
ることができる。
<Method for Manufacturing Light Emitting Device of Embodiment 2>
The manufacturing method of the light emitting device according to the second embodiment is different from the manufacturing method of the light emitting device according to the first embodiment except that a support 24 is used instead of the substrate 8 as shown in FIG. It is comprised similarly to the manufacturing method of 1. And after forming the sealing member 5, as shown by the dotted line of FIG. 13, it can form similarly to the manufacturing method of Embodiment 1 except the point which peels (removes).

<実施形態3>
実施形態3の発光装置300は、主としてバックライト等の光源として好適に用いるこ
とができるものである。封止部材5の形状が実施形態1とは異なっている。
図14は、発光装置300と、封止部材5に接して設けられる光学部材30の断面図で
ある(光学部材の厚み方向の断面を示す)。図14に示すように、封止部材5は導光板や
光ガイドフィルム等の光学部材30と接続可能な平坦面を有している。実施形態3では、
封止部材5は上方(基板8の裏面とは反対側)に向かって外側に広がるような形状とされて
いる。封止部材5の側面は曲面とされている。また、封止部材5は基板8とは接触せず、
枠体4の外側において露出された光反射部材2の上面と、枠体4の外壁と、透光性部材3
の上面とを被覆する。これにより、光質の良い光を光学部材に効率よく入射させることが
できる。
エッジタイプの導光板に封止部材5を接触させる場合は、発光装置は薄型であることが
好ましい。この場合の薄型とは、紙面奥方向(すなわち、導光板の厚み方向)の長さをい
う。この場合、基板8に搭載する発光素子1は平面視長方形であることが好ましく、枠体
も発光素子に合わせて発光素子の長手方向に長く、短手方向に短くする。薄型化を実現す
るために、長手方向の枠体は、短手方向の枠体よりも枠体が細く形成されていてもよい。
<Embodiment 3>
The light emitting device 300 of Embodiment 3 can be suitably used mainly as a light source such as a backlight. The shape of the sealing member 5 is different from that of the first embodiment.
FIG. 14 is a cross-sectional view of the light emitting device 300 and the optical member 30 provided in contact with the sealing member 5 (showing a cross section in the thickness direction of the optical member). As shown in FIG. 14, the sealing member 5 has a flat surface that can be connected to the optical member 30 such as a light guide plate or a light guide film. In Embodiment 3,
The sealing member 5 is shaped so as to spread outward (upward from the back surface of the substrate 8). The side surface of the sealing member 5 is a curved surface. Further, the sealing member 5 is not in contact with the substrate 8,
The upper surface of the light reflecting member 2 exposed outside the frame body 4, the outer wall of the frame body 4, and the translucent member 3.
The upper surface of the substrate is covered. Thereby, light with good light quality can be efficiently incident on the optical member.
When the sealing member 5 is brought into contact with an edge type light guide plate, the light emitting device is preferably thin. In this case, the term “thin” refers to the length in the depth direction of the paper (ie, the thickness direction of the light guide plate). In this case, the light-emitting element 1 mounted on the substrate 8 is preferably rectangular in plan view, and the frame is also elongated in the longitudinal direction of the light-emitting element and shortened in the lateral direction in accordance with the light-emitting element. In order to reduce the thickness, the frame in the longitudinal direction may be formed thinner than the frame in the short direction.

以下に、実施の形態の発光装置の各構成部材に適した材料等について説明する。
(基板8)
発光素子1が載置される基板は、通常、ガラスエポキシ、樹脂、セラミックス(HTC
C、LTCC)などの絶縁性材料、絶縁性材料と金属部材との複合材料等によって形成さ
れる。基板は、耐熱性及び耐候性の高いセラミックス又は熱硬化性樹脂を利用したものが
好ましい。セラミックス材料としては、アルミナ、窒化アルミニウム、ムライトなどが挙
げられる。特に、放熱性の高い窒化アルミニウムが好ましい。これらのセラミックス材料
に、例えば、BTレジン、ガラスエポキシ、エポキシ系樹脂等の絶縁性材料を組み合わせ
て形成された基板でもよい。熱硬化性樹脂としては、エポキシ樹脂、トリアジン誘導体エ
ポキシ樹脂、変性エポキシ樹脂、シリコーン樹脂、変性シリコーン樹脂、アクリレート樹
脂、ウレタン樹脂などを利用することができる。なかでも、トリアジン誘導体エポキシ樹
脂を用いることがより好ましい。基板の形状は、表面が平坦な板状体であることが好まし
い。
Hereinafter, materials suitable for each component of the light emitting device of the embodiment will be described.
(Substrate 8)
The substrate on which the light emitting element 1 is mounted is usually glass epoxy, resin, ceramics (HTC).
C, LTCC) or the like, or a composite material of an insulating material and a metal member. The substrate is preferably made of ceramic or thermosetting resin having high heat resistance and weather resistance. Examples of the ceramic material include alumina, aluminum nitride, and mullite. In particular, aluminum nitride with high heat dissipation is preferable. For example, a substrate formed by combining these ceramic materials with an insulating material such as BT resin, glass epoxy, or epoxy resin may be used. As the thermosetting resin, an epoxy resin, a triazine derivative epoxy resin, a modified epoxy resin, a silicone resin, a modified silicone resin, an acrylate resin, a urethane resin, or the like can be used. Among these, it is more preferable to use a triazine derivative epoxy resin. The shape of the substrate is preferably a plate-like body having a flat surface.

(配線9)
基板は、通常、その表面及び/又は内部に発光素子と接続される配線を有する。配線は
、銅、アルミニウム、金、銀、タングステン、鉄、ニッケル等の金属又は鉄−ニッケル合
金、燐青銅等の合金等によって形成することができる。配線の厚みは、例えば、数μmか
ら数百μmが挙げられる。
(Wiring 9)
The substrate usually has wiring connected to the light emitting element on the surface and / or inside thereof. The wiring can be formed of a metal such as copper, aluminum, gold, silver, tungsten, iron or nickel, or an alloy such as iron-nickel alloy or phosphor bronze. The thickness of the wiring is, for example, from several μm to several hundred μm.

(発光素子1)
発光素子1としては、例えば発光ダイオードチップ等の半導体発光素子を用いることが
できる。半導体発光素子は、透光性基板と、その上に形成された半導体積層体とを含むこ
とができる。透光性基板には、例えば、サファイア(Al)のような透光性の絶縁
性材料や、半導体積層体からの発光を透過する半導体材料(例えば、窒化物系半導体材料
)を用いることができる。
(Light emitting element 1)
As the light emitting element 1, for example, a semiconductor light emitting element such as a light emitting diode chip can be used. The semiconductor light emitting device can include a translucent substrate and a semiconductor stacked body formed thereon. For the light-transmitting substrate, for example, a light-transmitting insulating material such as sapphire (Al 2 O 3 ) or a semiconductor material that transmits light from the semiconductor stacked body (for example, a nitride-based semiconductor material) is used. be able to.

半導体積層体は、例えば、n型半導体層、発光層(活性層)およびp型半導体層等の複
数の半導体層を含む。半導体層には、例えば、III−V族化合物半導体、II−VI族
化合物半導体等の半導体材料から形成することができる。具体的には、InAlGa
1−X−YN(0≦X、0≦Y、X+Y≦1)等の窒化物系の半導体材料を用いることが
できる。
The semiconductor stacked body includes, for example, a plurality of semiconductor layers such as an n-type semiconductor layer, a light emitting layer (active layer), and a p-type semiconductor layer. The semiconductor layer can be formed from a semiconductor material such as a III-V group compound semiconductor or a II-VI group compound semiconductor, for example. Specifically, In X Al Y Ga
A nitride-based semiconductor material such as 1 -XYN (0 ≦ X, 0 ≦ Y, X + Y ≦ 1) can be used.

発光素子の電極としては、電気良導体を用いることができ、例えばCu等の金属が好適
である。
As the electrode of the light emitting element, a good electrical conductor can be used, and for example, a metal such as Cu is suitable.

(光反射部材2)
光反射部材は、絶縁体であり、ある程度の強度を有する光反射性樹脂により構成するこ
とができる。
光反射性樹脂とは、発光素子からの光に対する反射率が高く、例えば、反射率が70%以
上の樹脂を意味する。
光反射性樹脂としては、例えば透光性樹脂に、光反射性物質を分散させたものが使用で
きる。光反射性物質としては、例えば、酸化チタン、二酸化ケイ素、二酸化ジルコニウム
、チタン酸カリウム、アルミナ、窒化アルミニウム、窒化ホウ素、ムライトなどが好適で
ある。光反射性物質は、粒状、繊維状、薄板片状などが利用できるが、特に、繊維状のも
のは光反射部材の熱膨張率を低くして、例えば、発光素子との間の熱膨張率差を小さくで
きるので、好ましい。光反射性樹脂に含まれる樹脂材料としては、特に、シリコーン樹脂
、シリコーン変性樹脂、エポキシ樹脂、フェノール樹脂などの熱硬化性の透光性樹脂であ
るのが好ましい。
(Light reflecting member 2)
The light reflecting member is an insulator and can be made of a light reflecting resin having a certain degree of strength.
The light-reflective resin means a resin having a high reflectance with respect to light from the light emitting element, for example, a reflectance of 70% or more.
As the light-reflective resin, for example, a light-transmitting resin in which a light-reflective substance is dispersed can be used. As the light reflective substance, for example, titanium oxide, silicon dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite and the like are suitable. The light-reflective material may be in the form of particles, fibers, thin plate pieces, etc., but in particular, the fiber-like material has a low coefficient of thermal expansion of the light reflecting member, for example, the coefficient of thermal expansion with the light emitting element. This is preferable because the difference can be reduced. The resin material contained in the light-reflecting resin is particularly preferably a thermosetting translucent resin such as a silicone resin, a silicone-modified resin, an epoxy resin, or a phenol resin.

(枠体4)
枠体4は、その内壁面で発光素子1から側方へ出射した光を上方へ反射させて発光装置
の発光効率を向上させるための反射板として機能させることができる。
(Frame 4)
The frame body 4 can function as a reflector for reflecting light emitted from the light emitting element 1 to the side by the inner wall surface upward to improve the light emission efficiency of the light emitting device.

さらに、枠体は、光反射部材2上へ液状やペースト状で成形してそのまま凝固させて形
成できる材料を適用することが好ましい。枠体を透光性部材の充填時の堰として十分な高
さに形成するために、ペースト状すなわち高粘度(例えば、25℃のときの粘度が380
〜450Pa・s)の液状の材料が好ましい。このような材料として熱硬化性樹脂や熱可
塑性樹脂が挙げられ、具体的には、フェノール樹脂、エポキシ樹脂、BTレジン、PPA
、シリコーン樹脂等が挙げられる。また、枠体は、反射率を高くするために白色であるこ
とが好ましい。さらに枠体は、反射率をいっそう高くするために、前記樹脂材料に、発光
素子が発光した光を吸収し難く、かつ母材である当該樹脂に対して屈折率差の大きい光反
射材料(例えばTiO2,Al23,ZrO2,MgO,ZnO等)の粉末を、予め分散さ
せて形成してもよい。
Further, it is preferable to apply a material that can be formed by forming the frame on the light reflecting member 2 in a liquid or paste form and solidifying it as it is. In order to form the frame body at a sufficient height as a weir when filling the translucent member, it is pasty, that is, has a high viscosity (for example, a viscosity of 380 at 25 ° C.
A liquid material of ˜450 Pa · s) is preferred. Examples of such materials include thermosetting resins and thermoplastic resins. Specifically, phenol resins, epoxy resins, BT resins, PPA
And silicone resin. Moreover, it is preferable that a frame is white in order to make a reflectance high. Further, in order to further increase the reflectivity, the frame body has a light reflecting material (for example, a resin material that hardly absorbs light emitted by the light emitting element and has a large refractive index difference with respect to the resin that is a base material). TiO 2 , Al 2 O 3 , ZrO 2 , MgO, ZnO, etc.) powder may be dispersed in advance.

枠体は、基板からの高さを特に規定しないが、図4に示すように、蛍光体層14と拡散
層12を分離して形成することが可能な高さにすることが好ましい。また、枠体は、平面
視における幅(壁の厚み)を特に規定しない。
The frame body does not particularly define a height from the substrate, but it is preferable that the frame body has a height at which the phosphor layer 14 and the diffusion layer 12 can be formed separately as shown in FIG. Further, the frame does not particularly define the width (wall thickness) in plan view.

(透光性部材3)
透光性部材は、発光ダイオード等を搭載した一般的な発光装置の封止に用いられる透光
性樹脂材料を適用することができ、具体的には、シリコーン樹脂、エポキシ樹脂、ユリア
樹脂等が挙げられる。また、透光性樹脂は、先に形成された枠体が堰になるので、比較的
低粘度の液状の樹脂材料(例えば、25℃のときの粘度が0.01〜5.0Pa・s)で
形成することができるため、小さな領域であっても充填を容易とすることができる。
(Translucent member 3)
As the translucent member, a translucent resin material used for sealing a general light emitting device on which a light emitting diode or the like is mounted can be applied. Specifically, a silicone resin, an epoxy resin, a urea resin, or the like can be used. Can be mentioned. The translucent resin has a relatively low viscosity liquid resin material (for example, a viscosity at 25 ° C. of 0.01 to 5.0 Pa · s) because the previously formed frame is a weir. Therefore, even in a small region, filling can be facilitated.

さらに、このような低粘度の樹脂材料に波長変換物質(ある程度の比重を有する、例え
ば蛍光体)を混合した場合、硬化するまでに波長変換物質が沈殿し易いので、基板8上に
載置された発光素子1の表面(上面)近傍に偏って波長変換物質が分布して、発光素子1
が発光した光が好適に波長変換される。また、これらの樹脂材料に、目的や用途に応じて
前記波長変換物質の他に、着色剤、光拡散剤、フィラー等を含有させてもよい。以下、透
光性部材に含有させる波長変換物質について説明する。
Further, when a wavelength converting substance (for example, a phosphor having a certain specific gravity, for example) is mixed with such a low-viscosity resin material, the wavelength converting substance is likely to be precipitated before curing, and thus is placed on the substrate 8. The wavelength conversion substance is distributed in the vicinity of the surface (upper surface) of the light-emitting element 1, and the light-emitting element 1
The light emitted by is suitably wavelength-converted. Further, these resin materials may contain a colorant, a light diffusing agent, a filler and the like in addition to the wavelength converting substance according to the purpose and application. Hereinafter, the wavelength conversion substance contained in the translucent member will be described.

(波長変換物質)
波長変換物質としては、少なくとも発光素子から出射された光によって励起されて、異
なる波長の発光をするものであればよい。例えば、
(i)アルミニウムガーネット系等のガーネット系蛍光体(例えば、セリウムで賦活され
たイットリウム・アルミニウム・ガーネット(YAG)系蛍光体、セリウムで賦活された
ルテチウム・アルミニウム・ガーネット(LAG)系蛍光体等)、
(ii)ユウロピウム及び/又はクロムで賦活された窒素含有アルミノ珪酸カルシウム(C
aO−Al−SiO)系蛍光体、
(iii)ユウロピウムで賦活されたシリケート系((Sr,Ba)SiO)蛍光体、
(iv)β−SiAlON系蛍光体、
(v)CASN(CaAlSiN:Eu)系又はSCASN系等の窒化物系蛍光体、
(vi)LnSiN11系、LnSiAlON系等の希土類窒化物系蛍光体(Lnは希土
類元素)、
(vii)BaSi:Eu系、BaSi12:Eu系等の酸窒化物系
蛍光体、
(viii)マンガンで賦活フッ化物錯体蛍光体(例えば、KSF系(KSiF:Mn)
蛍光体)、
(iX)CaS系(CaS:Eu)、SrGa系(SrGa:Eu)、SrA
系、ZnS系等の硫化物系蛍光体、
(X)クロロシリケート系蛍光体などが挙げられる。
(Wavelength conversion substance)
Any wavelength converting substance may be used as long as it is excited by at least light emitted from the light emitting element and emits light having a different wavelength. For example,
(i) Garnet-based phosphors such as aluminum garnet (eg, yttrium-aluminum-garnet (YAG) phosphors activated with cerium, lutetium-aluminum-garnet (LAG) -based phosphors activated with cerium) ,
(ii) Nitrogen-containing calcium aluminosilicate activated with europium and / or chromium (C
aO-Al 2 O 3 -SiO 2 ) based phosphor,
(iii) a silicate-based ((Sr, Ba) 2 SiO 4 ) phosphor activated with europium,
(iv) β-SiAlON phosphor
(v) a nitride phosphor such as CASN (CaAlSiN 3 : Eu) or SCASN;
(vi) rare earth nitride phosphors such as LnSi 3 N11 and LnSiAlON (Ln is a rare earth element),
(vii) oxynitride phosphors such as BaSi 2 O 2 N 2 : Eu and Ba 3 Si 6 O 12 N 2 : Eu;
(viii) Fluoride complex phosphor activated with manganese (for example, KSF type (K 2 SiF 6 : Mn))
Phosphor),
(iX) CaS system (CaS: Eu), SrGa 2 S 4 system (SrGa 2 S 4 : Eu), SrA
sulfide phosphors such as l 2 O 4 and ZnS,
(X) Chlorosilicate phosphor and the like.

また、半導体材料、例えば、II−VI族、III−V族、IV−VI族半導体、具体
的には、CdSe、コアシェル型のCdSSe1−x/ZnS、GaP等のナノサイズ
の高分散粒子であるいわゆるナノクリスタル、量子ドット(Q−Dots)と称される発
光物質でもよい。量子ドット蛍光体は、不安定であるため、PMMA(ポリメタクリル酸
メチル)、シリコーン樹脂、エポキシ樹脂、これらのハイブリッド樹脂などで粒子の表面
を被覆又は安定化してもよい。
Further, semiconductor materials such as II-VI, III-V, and IV-VI semiconductors, specifically, nano-sized high dispersion of CdSe, core-shell CdS x Se 1-x / ZnS, GaP, etc. A so-called nanocrystal, which is a particle, or a light-emitting substance called a quantum dot (Q-Dots) may be used. Since the quantum dot phosphor is unstable, the surface of the particles may be coated or stabilized with PMMA (polymethyl methacrylate), a silicone resin, an epoxy resin, or a hybrid resin thereof.

(支持体24)
支持体は、発光素子1を載置し、少なくとも光反射部材2の成形後に除去されるもので
ある。これにより、発光装置をより小型化することができる。材料は特に限定されるもの
ではなくシート形状、板形状であればよい。
(Support 24)
The support is a member on which the light emitting element 1 is placed and is removed at least after the light reflecting member 2 is molded. Thereby, the light emitting device can be further downsized. The material is not particularly limited and may be a sheet shape or a plate shape.

(封止部材5)
封止部材を構成する透光性部材としては、シリコーン樹脂、シリコーン変性樹脂、エポ
キシ樹脂、フェノール樹脂などの熱硬化性樹脂、ポリカーボネート樹脂、アクリル樹脂、
メチルペンテン樹脂、ポリノルボルネン樹脂などの熱可塑性樹脂を用いることができる。
特に、耐光性、耐熱性に優れるシリコーン樹脂が好適である。
(Sealing member 5)
As a translucent member constituting the sealing member, a thermosetting resin such as a silicone resin, a silicone-modified resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin,
Thermoplastic resins such as methylpentene resin and polynorbornene resin can be used.
In particular, a silicone resin excellent in light resistance and heat resistance is suitable.

以上、本発明に係るいくつかの実施形態について例示したが、本発明は上述した実施形
態に限定されるものではなく、本発明の要旨を逸脱しない限り任意のものとすることがで
きることは言うまでもない。
As mentioned above, although some embodiment which concerns on this invention was illustrated, this invention is not limited to embodiment mentioned above, It cannot be overemphasized that it can be made arbitrary, unless it deviates from the summary of this invention. .

1 発光素子
2 光反射部材
3 透光性部材
4 枠体
5 封止部材
6 レンズ部
7 鍔部
8 基板
9 配線
16 保護素子
18 端子電極
20 エアベント
21 電極
24 支持体
30 光学部材
100、200、300 発光装置
DESCRIPTION OF SYMBOLS 1 Light emitting element 2 Light reflection member 3 Translucent member 4 Frame body 5 Sealing member 6 Lens part 7 Eaves part 8 Substrate 9 Wiring 16 Protection element 18 Terminal electrode 20 Air vent 21 Electrode 24 Support body 30 Optical members 100, 200, 300 Light emitting device

Claims (9)

発光素子と、
前記発光素子の側面を被覆し、前記発光素子の上面を露出して配置された光反射部材と

前記光反射部材上であって、前記上面の外周を取り囲むように形成された枠体と、
前記枠体内に配置された透光性部材と、
前記光反射部材、前記枠体、及び前記透光性部材を被覆する透光性の封止部材と、を有
し、
前記封止部材は鍔部を有し、前記枠体の一部が前記鍔部で被覆される、発光装置。
A light emitting element;
A light reflecting member that covers a side surface of the light emitting element and is disposed to expose an upper surface of the light emitting element;
A frame formed on the light reflecting member so as to surround an outer periphery of the upper surface;
A translucent member disposed within the frame;
A translucent sealing member that covers the light reflecting member, the frame, and the translucent member;
The light-emitting device, wherein the sealing member has a flange, and a part of the frame is covered with the flange.
前記透光性部材は、波長変換物質を含有する請求項1に記載の発光装置。   The light emitting device according to claim 1, wherein the translucent member contains a wavelength conversion substance. 前記発光素子の上面及び前記光反射部材の上面が略面一である、請求項1または2に記
載の発光装置。
The light emitting device according to claim 1, wherein an upper surface of the light emitting element and an upper surface of the light reflecting member are substantially flush.
前記光反射部材に保護素子が埋設されている、請求項1〜3のいずれか1項に記載の発
光装置。
The light emitting device according to claim 1, wherein a protective element is embedded in the light reflecting member.
前記発光素子は複数であり、隣接する前記発光素子間の間隔は、1〜300μmである
、請求項1〜4のいずれか1項に記載の発光装置。
The light emitting device according to any one of claims 1 to 4, wherein the light emitting elements are plural, and an interval between the adjacent light emitting elements is 1 to 300 µm.
前記発光素子が載置される基板を有し、前記基板はその下面に端子電極を有する、請求
項1〜5のいずれか1項に記載の発光装置。
The light-emitting device according to claim 1, further comprising a substrate on which the light-emitting element is placed, wherein the substrate has a terminal electrode on a lower surface thereof.
前記光反射部材の下面から、端子電極が露出されている、請求項1〜5のいずれか1項
に記載の発光装置。
The light emitting device according to claim 1, wherein a terminal electrode is exposed from a lower surface of the light reflecting member.
前記透光性部材が拡散材を含有する、請求項1〜7のいずれか1項に記載の発光装置。   The light-emitting device according to claim 1, wherein the translucent member contains a diffusing material. 前記透光性部材は、前記発光素子側に蛍光体が沈降されてなる、請求項1〜8のいずれ
か1項に記載の発光装置。
The light-emitting device according to claim 1, wherein the translucent member has a phosphor precipitated on the light-emitting element side.
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