JP2010192629A - Method of manufacturing light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting device which shows less color unevenness and efficiently extracts emission light out of a light-emitting element to achieve light emission with high luminous flux or high luminance. <P>SOLUTION: The method of manufacturing the light-emitting device is provided, the light-emitting device including the light-emitting element 101, a translucent member 102 which transmits light emitted from the light-emitting element to emit the light outside, and an adhesive 103 via which the light-emitting element and the translucent member are bonded together. The manufacturing method includes a first step of placing the light-emitting element 101 on a substrate 107, a second step of exposing the upper surface of the light-emitting element 101 and covering the side faces of the light-emitting element 101 with a first light reflective member 104, a third step of applying an adhesive 103 to the upper surface and gluing the light-emitting element 101 to the translucent member 102, and a fourth step of exposing the upper surface of the translucent member 102 and covering the side faces of the translucent member 102 with a second light reflective member 105. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a light emitting device including a translucent member that can transmit light from a light emitting element.

  The semiconductor light emitting element is small in size, has high power efficiency, and emits bright colors. In addition, a light emitting element which is a semiconductor element does not have a concern about a broken ball. Furthermore, it has excellent initial drive characteristics and is strong against vibration and repeated on / off lighting. In addition, by combining the light source light emitted from the light emitting element and the wavelength conversion member that can be excited to emit light of a different hue from the light source light, light of various colors is emitted based on the principle of light color mixing. Possible light emitting devices have been developed. Because of such excellent characteristics, semiconductor light-emitting elements such as light-emitting diodes (LEDs) and laser diodes (LDs) are used as various light sources. In particular, in recent years, as a light source for illumination replacing a fluorescent lamp, attention has been attracted as next-generation illumination with lower power consumption and longer life, and further improvement in light emission output and improvement in light emission efficiency are required. In addition, there is a demand for a high-luminance light source such as a projector such as a car headlight and a floodlight.

  As such a light source, for example, a light emitting device described in Patent Document 1 has been proposed. The light emitting device described in Patent Document 1 includes a light emitting semiconductor chip having an upper surface on which electrodes are formed, and a phosphor chip fixed to the bottom surface of the semiconductor light emitting chip with a transparent adhesive. Most of the blue light emitted from the light emitting diode chip is guided into the phosphor chip, and part of the light is emitted outside the phosphor chip, but part of the light is emitted from the phosphor chip. The body is irradiated. For this reason, the phosphor is excited by blue light and generates yellow light, but white light is generated by mixing colors of blue light and yellow light.

JP 2002-141559 A

  FIG. 7 is a diagram showing a light emitting device 500 of Patent Document 1. In the light-emitting device shown in FIG. 7, the adhesive material varies due to variations in the amount of adhesive applied when connecting the semiconductor light-emitting chip 501 (hereinafter also referred to as a light-emitting element) and the phosphor chip 502 (hereinafter also referred to as a translucent member). It is difficult to arrange an appropriate amount of 503 only between the light emitting element 501 and the phosphor chip 502. If the amount of adhesive is set to a large amount, the adhesive that protrudes from the adhesive surface passes through the side surface of the light-emitting element and falls on the substrate, so that the phosphor is lost due to light propagation through the adhesive material. There was a problem that the light taken into the chip was reduced and the luminous flux was lowered.

  In addition, when the amount of the adhesive is small, not only the light emitting element and the phosphor chip cannot be bonded, but also an air layer is interposed between the light emitting element and the phosphor chip, so that the refraction generated at the interface. Due to the difference in rate, there is a problem that light cannot be efficiently incident on the phosphor chip from the light emitting element, and the light taken into the phosphor chip is reduced, causing the emission color to vary and the luminous flux to decrease.

  The present invention has been made to solve such conventional problems. An object of the present invention is to provide a method for manufacturing a light-emitting device that can efficiently emit light emitted from a light-emitting element into a light-transmitting member and take it out, and can realize light emission with high luminous flux or high brightness. is there.

  In order to achieve the above object, a manufacturing method according to the present invention includes a light emitting element and a translucent member that transmits light emitted from the light emitting element and emits the light to the outside. A method of manufacturing a light emitting device in which the light transmissive member is bonded via an adhesive, the first step of placing the light emitting element on a substrate, and exposing the upper surface of the light emitting element. A second step of covering a side surface of the light emitting element with a first light reflective member; and after the second step, an adhesive is applied to the upper surface to bond the light emitting element and the light transmissive member. And a fourth step after the third step, exposing a top surface of the translucent member and covering a side surface of the translucent member with a second light reflective member, It is characterized by having.

  Preferably, the light emitting device further includes a step of covering a gap between the light emitting element and the substrate with a light reflecting member before the third step.

  Furthermore, the fourth step is preferably performed by a printing method.

  Moreover, it is preferable that a 1st light reflection member is low elasticity or a low linear expansion rather than the said 2nd light reflection member.

  The light-emitting element is a light-emitting element formed by stacking a semiconductor layer on a growth substrate, and the growth substrate preferably has irregularities on a joint surface with the semiconductor layer.

  According to the manufacturing method of the present invention, since the adhesive material does not cover the side surface of the light emitting element, it is possible to suppress a decrease in the light beam due to the loss of light caused by the protrusion of the adhesive material, and to emit light with high light flux or high luminance. A light-emitting device can be provided.

It is a schematic sectional drawing which shows one Embodiment of this invention. It is a schematic sectional drawing which shows an example of the manufacturing process of this invention. It is a schematic sectional drawing which shows an example of the manufacturing process of other embodiment of this invention. It is a schematic sectional drawing which shows other embodiment of this invention. It is a schematic sectional drawing which shows other embodiment of this invention. It is the schematic perspective view and schematic sectional drawing which show other embodiment of this invention. It is a schematic sectional drawing of the conventional light-emitting device. 6 is a graph showing light fluxes of a light emitting device according to a comparative example and Example 4.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the embodiment described below exemplifies a light emitting device for embodying the technical idea of the present invention, and the present invention does not specify the light emitting device as follows. Further, the present specification by no means specifies the members shown in the claims to the members of the embodiments. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the component parts described in the embodiments are not intended to limit the scope of the present invention unless otherwise specified, but are merely described. It's just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate. Furthermore, each element constituting the present invention may be configured such that a plurality of elements are constituted by the same member and the plurality of elements are shared by one member, and conversely, the function of one member is constituted by a plurality of members. It can also be realized by sharing. In addition, the contents described in some examples and embodiments may be used in other examples and embodiments.

<Embodiment 1>
FIG. 1 is a schematic cross-sectional view of a light-emitting device 100 according to the manufacturing method of Embodiment 1 of the present invention. The light-emitting device 100 includes a light-emitting element 101 and a translucent member 102 that transmits light emitted from the light-emitting element 101 and emits the light to the outside. The light-emitting element 101 and the translucent member 102 are an adhesive. Bonded through 103. In this embodiment mode, the light emitting element 101 is mounted on a conductive pattern (not shown) formed on the substrate 107 via a conductive member 108.

  The side surface of the light emitting element 101 is covered with the first light reflecting member 104, and the upper surface of the light emitting element 101 is exposed without being covered with the first light reflecting member 104. An adhesive material 103 is disposed on the exposed upper surface of the light emitting element 101, and a translucent member 102 is disposed thereon. Further, the translucent member 102 is exposed to the outside so that the upper surface functions as a light extraction portion, and the side surface is covered with the second light reflecting member 105 in order to reduce color unevenness and increase the luminous flux. Yes.

  Here, in the manufacturing method of the present embodiment, the first light reflecting member 104 covers the side surface of the light emitting element 101 and the light emitting element mounting surface of the substrate 107 in advance, and then the first light reflecting member. After forming 104, an adhesive material 103 is disposed thereon, so that the adhesive material 103 is formed so as not to flow to the side surface of the light emitting element 101 or the substrate 107. By configuring in this way, it is possible to control the arrangement position of the adhesive material 103 to a desired position, and it is possible to arrange the protruding adhesive material at a position where light loss is small. Thereby, it is possible to suppress a decrease in light flux due to the amount of adhesive applied, and the side surface of the translucent member 102 is covered with the second resin 105 from above, so that the light enters from below the translucent member 102. Since the emitted light can be emitted only from above, color unevenness caused by the emitted light from the thickness direction of the translucent member can be reduced.

  Below, the manufacturing method of this invention is demonstrated using FIG.

(First step)
First, the light emitting element 101 is placed on the substrate 107. FIG. 2 shows individual light emitting devices. At the time of manufacture, the following second to fourth steps are performed on the collective substrate, and finally the individual light emitting devices are created by dividing into individual pieces.

(Second step)
Next, the upper surface of the light emitting element 101 is exposed and the side surface of the light emitting element is covered with the first light reflective member 104. In the present embodiment, as shown in FIG. 2A, a frame body 110 having a height that is substantially flush with the light emitting surface of the light emitting element 101 is disposed on the substrate 107, and the first light reflective member. 104 is filled in the frame 110 and cured.

  In order to make the light from the light emitting element 101 incident on the translucent member 102 efficiently, it is preferable that all the side surfaces of the light emitting element 101 are covered with the first light reflecting member. That is, it is preferable that the first light-reflecting member 104 covers all surfaces that are in contact with the upper surface except for the upper surface. Thereby, it can prevent completely that the adhesive material 103 adheres to a side surface. In addition, in the case where a light emitting element formed by stacking a semiconductor layer on a growth substrate as described later is used as the light emitting element 101, it is preferable that the growth substrate is substantially covered.

(Third process)
After the second step, an adhesive 103 is applied to the upper surface of the light emitting element 101, and the light emitting element and the translucent member are bonded. In the present embodiment, as shown in FIG. 2B, after the first light-reflecting member 104 is cured, the frame 110 shown in FIG. An adhesive material 103 is applied to the upper surface of the light emitting element 101 exposed from the light reflecting member 104, and the light transmitting member 102 is bonded. When the amount of the adhesive material 103 is small, a gap is formed between the light emitting element 101 and the translucent member 102, and when the second light reflecting member to be formed later enters this gap, the luminous flux is significantly reduced. Therefore, as shown in FIG. 3C, the amount of the adhesive 103 is adjusted so as to cover at least an area larger than the area of the light emitting surface of the light emitting element 101 after bonding. As a result, the adhesive protruding from the light emitting surface of the light emitting element 101 comes to be disposed at the interface between the first light reflecting member 104 and the second light reflecting member 105. A decrease in light flux can be suppressed without flowing to the side surface of the light emitting element 101 or the substrate 107.

(Fourth process)
Next, the upper surface of the translucent member 102 is exposed, and the side surface of the translucent member 102 is covered with a light reflective member. In the present embodiment, as shown in FIG. 3D, the second light reflective member 105 is dropped at several locations so as to cover the side surface of the light transmissive member 102 and the first light reflective member 104. To form. By forming in this way, the second light-reflecting member 105 is formed so that the light emitting surface of the translucent member 102 is exposed at the top and the cross-sectional area increases toward the substrate 107. In order to reduce color unevenness and increase the luminous flux, it is preferable to completely cover the side surface of the translucent member 102 with the second light reflective member 105, but it is sufficient that the side surface is substantially covered.

(Fifth process)
Finally, the aggregate substrate processed in the first to fourth steps is individually cut to obtain the light emitting device 100 according to the manufacturing method of the embodiment.

  Below, each member and structure of the light-emitting device 100 which concern on the manufacturing method of this Embodiment are demonstrated.

(Light emitting element 101)
As the light-emitting element 101, a known element, specifically, a semiconductor light-emitting element can be used, and a GaN-based semiconductor is preferable because it can emit a short wavelength capable of efficiently exciting a fluorescent substance described later. Although the positive electrode and the negative electrode are formed on the same surface side in the light-emitting element 101 of Embodiment 1, the present invention is not limited to this mode. For example, the positive and negative electrodes on one surface are not necessarily limited to a pair. A plurality of each may be formed.

  The type of the light emitting element is not particularly limited, but for example, a nitride semiconductor such as InN, AlN, GaN, InGaN, AlGaN, InGaAlN, etc. formed as a light emitting layer on a substrate by MOCVD method, for example The n-type contact layer made of n-type GaN, the n-type cladding layer made of n-type AlGaN, and the p-type contact layer made of p-type GaN are sequentially stacked on the sapphire substrate. If the growth substrate does not constitute a light emitting element structure, such as a sapphire substrate, it may be removed. The removal of the growth substrate can be carried out by polishing or LLO (Laser Lift Off) while being held on the chip mounting portion of the apparatus or submount, for example. The semiconductor structure includes a homostructure having a MIS junction, a PIN junction, a PN junction, etc., a hetero bond, or a double hetero bond. Various emission wavelengths can be selected depending on the semiconductor material and the mixed crystal ratio. Moreover, it can be set as the single quantum well structure or the multiple quantum well structure which formed the semiconductor active layer in the thin film which produces a quantum effect. The active layer may be doped with donor impurities such as Si and Ge and / or acceptor impurities such as Zn and Mg. The emission wavelength of the light-emitting element can be changed from the ultraviolet region to red by changing the In content of InGaN in the active layer or changing the type of impurities doped in the active layer.

  A known technique can also be adopted for the mounting form of the light emitting element 101. For example, in an element structure having positive and negative electrodes on the same surface side, the electrode surface side may be mounted as a light extraction surface, or flip chip mounting may be performed with the growth substrate side facing the electrode as a light extraction surface.

  In the present embodiment, as shown in FIG. 1, the light emitting element 101 is a light emitting element 101 formed by stacking a semiconductor layer 101b on a growth substrate 101a, and the growth substrate 101a side is a light extraction surface. The semiconductor layer 101b is mounted with the substrate 107 side. The growth substrate 101a has irregularities (not shown) on the joint surface with the semiconductor layer 101b, thereby intentionally changing the critical angle when the light emitted from the semiconductor layer 101b hits the growth substrate 101a. Thus, light can be easily extracted to the outside of the growth substrate 101a.

  In this embodiment mode, the light emitting element 101 is flip-chip mounted on a conductive pattern (not shown) formed on the substrate 109 with a conductive member 108 interposed therebetween. In the case of flip chip mounting, it is preferable to dispose an underfill material in a gap between the light emitting element mounting portion of the substrate 107 and the light emitting element 102. Thereby, the stress by the difference of the thermal expansion coefficient of a light emitting element and a board | substrate can be absorbed, or heat dissipation can be improved. When the underfill material is formed as the first light reflecting member 104 at the same time, it can be formed in one step, and the light emitted from the light emitting element toward the substrate can be reflected, and the luminous flux can be increased. . At this time, the particle size of the reflective material (described later) contained in the first light reflective member 104 is set to be smaller than the gap between the mounted light emitting element 101 and the substrate 107, so that The first light reflecting member 104 can be easily disposed also in the lower part. Accordingly, light emitted in the direction of the substrate 107 can be prevented from being absorbed by the substrate 107, and the light emitted in the direction of the substrate 107 can also be reflected toward the light emitting element 102 to increase the luminous flux.

(First light reflective member 104)
As shown in FIG. 1, the first light reflective member 104 covers the side surface of the light emitting element 101, and the light extraction surface of the light emitting element 101 is exposed from the first light reflective member 104, thereby transmitting light. It is formed so that light can enter the light-sensitive member 102. The first light reflecting member 104 is a member that can reflect light from the light emitting element 101 and reflects light emitted from the side surface of the light emitting element into the light emitting element. The light thus returned into the light emitting element passes through the adhesive material 103 from the light emitting surface exposed from the first light reflecting member, and is transmitted with the light emitted from the light emitting element and directly upward. The light is emitted in the direction of the member 102.

  Specifically, as a material of the first light reflective member 104, a resin such as a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, an acrylic resin, or a hybrid resin including at least one of these resins is used. It can be formed by containing a reflective material. As a material of the reflective substance, titanium oxide, silicon dioxide, titanium dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, or the like can be used. Since the amount of light reflection and transmission varies depending on the concentration and density, the concentration and density may be adjusted as appropriate according to the shape and size of the light-emitting device. For example, in the case of a relatively small light emitting device, it is necessary to reduce the thickness of the first light reflecting member, and in order to suppress light leakage at the thin portion, the concentration of the reflective substance is increased. Is preferred. On the other hand, in the manufacturing process such as application and molding of the first light reflecting member, if there is a manufacturing difficulty when the concentration of the reflective substance is increased, the concentration is adjusted appropriately. For example, it is preferable that the content concentration of the reflective material is 30 wt% or more and the thickness thereof is 20 μm or more.

  Moreover, if it is a material which has heat dissipation in addition to reflectivity, heat dissipation can be improved, providing reflection performance. Examples of such a material include aluminum nitride and boron nitride having high thermal conductivity. In addition to the reflective material, a heat radiating material may be added for the purpose of enhancing the heat radiating property. Furthermore, the light reflective member preferably has the same material as the main material of the substrate 107, whereby a light emitting device that is resistant to thermal stress can be obtained.

  Further, when the first light reflective member 104 is used as the above-described underfill material, the light emitting element 101 and the substrate are used when an underfill material having lower elasticity or lower linear expansion than the second light reflective member described later is used. The resin expansion and contraction stress at the joint with 107 can be relaxed, and the electrical joint reliability is improved, which is preferable. Such an underfill material is preferably, for example, JIS-A hardness (rubber hardness) of 10 or less. In this case, a material having high mechanical strength is used for the second light reflecting member 105 described later, and the first light reflecting member 105 prevents the first light reflecting member 105 from being exposed to the outside. It is preferable that the reflective member 104 be completely covered. Thereby, durability with respect to the external stress of the light emitting element 101 and an underfill material part is securable.

  The first light reflective member 104 can be formed by injection molding, potting molding, resin printing, transfer molding, compression molding, or the like.

(Second light reflective member 105)
The second light reflective member 105 covers the side surface of the light transmissive member 102 and exposes a portion that emits light from the light emitting element 101 to the outside. The specific material and molding method are the same as those of the first light reflective member described above. The first light reflective member 104 and the second light reflective member 105 may be formed of the same member or different members. The first light reflecting member may be formed so as to completely cover it, or a part of the first light reflecting member may be exposed to cover a part of the light reflecting device. In order to have it, the JIS-A hardness is preferably 40 or more.

(Adhesive 103)
The adhesive material 103 joins the light emitting element 101 and the translucent member 102 and is disposed at the interface between the first light reflective member 104 and the second light reflective member 105. In order to effectively guide the light emitted from the light emitting element 101 to the light transmissive member 102 side, it is preferable to reduce the refractive index in the order of the light emitting element 101, the adhesive 103, and the light transmissive member 102.

  In addition, as the distance between the light emitting element 101 and the translucent member 102 becomes shorter, the probability that the diffused light enters the translucent member 102 again when light enters the translucent member 102 increases. It is preferable to reduce the thickness of the glass because the luminous efficiency can be improved.

  As a specific material of the adhesive material 103, for example, a silicone resin, an epoxy resin, an acrylic resin, a polycarbonate resin, a polyimide resin, a low-melting glass, or the like is used.

(Translucent member 102)
The light emitting device 100 in this embodiment includes a translucent member 102 that transmits light emitted from the light emitting element 101 and emits the light to the outside. The translucent member 102 preferably includes a phosphor capable of converting the wavelength of at least part of the incident light. Thereby, when the light from the light emitting element passes through the translucent member, the phosphor as the wavelength conversion member is excited to obtain light having a wavelength different from the emission wavelength of the light emitting element. As a result, it can be set as the emitted light which has a desired hue by color mixing with the light which is not wavelength-converted.

  Specifically, for example, the phosphor powder mixed with a phosphor ingot such as a phosphor single crystal, polycrystal, or phosphor powder sintered body, resin, glass, inorganic, etc. is sintered. The thing which was done is mentioned. By making the light entrance surface and the light exit surface substantially flat and substantially parallel to each other, light suitably travels from light reception to light output. Further, the surface may be processed so that the light exit surface has, for example, a lens shape or a shape that scatters light.

  Moreover, it can be suitably combined with a blue light emitting element to emit white light, and typical phosphors used for the wavelength conversion member include, for example, YAG (Yttrium Aluminum Garnet), BOS (Barium ortho-Silicate), etc. A body etc. are used suitably.

  Furthermore, a red phosphor is included in the adhesive 103 that bonds the translucent member 102 containing the wavelength conversion member and the blue light-emitting element, so that the light-emitting device emits light in a light bulb color so as to comply with the JIS standard. be able to. That is, the blue light emitted from the light emitting element 101 and the yellow light or red light of the phosphor are mixed to emit warm white light. Since it is considered that arranging the phosphor from the long wave toward the short wave from the vicinity of the light emitting element 101 is considered to have good light extraction efficiency, it is possible to effectively include the red phosphor in the adhesive material 103 closer to the light emitting element. Light can be extracted. Since it is disposed in the vicinity of the light emitting element 101, it is preferably a phosphor resistant to heat.

  As shown in FIG. 1, the translucent member 102 has a width larger than the width of the light emitting surface of the light emitting element, and when the translucent member 102 and the light emitting element 101 are bonded, the translucent member 102 It is preferable that the outer peripheral part of the member 102 protrudes rather than the outer peripheral part of a light emitting element. In other words, in FIG. 1, the side surface of the translucent member 102 protrudes outward from the side surface of the light emitting element 101. Thereby, since the light-transmitting member 102 can receive light with a surface larger than the light emitting surface of the light emitting element 101, the light loss can be reduced. In addition, light transmitted through the adhesive 103 protruding from the light emitting surface of the light emitting element 101 can be received.

(Substrate 107)
Examples of the material of the substrate 107 include insulating members such as glass epoxy, resin, and ceramics. Moreover, the metal which formed the insulating member may be sufficient. In particular, a material capable of forming a conductor wiring for connecting to the light emitting element 101 on the surface thereof is preferable, and such a material is preferably made of a ceramic having high heat resistance and weather resistance. As the ceramic material, alumina, aluminum nitride, mullite and the like are preferable. In addition, even if it is a support substrate which consists of ceramics, you may have an insulating layer which consists of insulating materials other than ceramics in that part. Examples of such a material include BT resin, glass epoxy, epoxy resin, and the like.

  When the first light-reflecting member 104 and / or the second light-reflecting member 105 is formed by potting, a concave or convex surface is formed on the surface of the substrate 107 in order to suppress the outflow of the resin as the reflecting member. It is preferable to do. A convex shape may be formed as a wiring pattern provided on the surface of the substrate 107.

  Further, the substrate 107 may have a structure having a cavity. Thereby, when forming a 1st light reflective member or a 2nd light reflective member, masks, such as a frame, become unnecessary and it is preferable. For example, a substrate bonding structure, a three-dimensional circuit board (Molded Interconnect Device; MID), and the like can be given.

  Hereinafter, examples according to the present invention will be described in detail according to the production method of the present invention. Needless to say, the present invention is not limited to the following examples.

<Example 1>
As Example 1, a method of manufacturing the light-emitting device shown in FIG. 1 will be described with reference to FIG. FIG. 2 is a cross-sectional view showing an example of a manufacturing process of the light emitting device of the present invention.

(First step)
First, the light emitting element 101 is placed on the substrate 107. In this embodiment, aluminum nitride is used as the substrate 107. A wiring for electrical connection with the light emitting element 101 is formed on the surface of an aluminum nitride plate having a length of 30 mm, a width of 40 mm, a thickness of 1.5 mm, and a thermal conductivity of about 170 W / m · K by sputtering. Yes. A bump 108 made of Au is used for the wiring of the aluminum nitride aggregate substrate, and the 1 mm × 1 mm light-emitting element 101 formed by stacking the semiconductor layers on the sapphire substrate is arranged so that the sapphire substrate side becomes the light emitting surface. Flip chip mounting. FIG. 2 shows individual light emitting devices. At the time of manufacture, the following second to fourth steps are performed on the collective substrate, and finally the individual light emitting devices are created by dividing into individual pieces.

(Second step)
Next, the upper surface of the light emitting element is exposed and the side surface of the light emitting element is covered with a light reflective member. In this embodiment, as shown in FIG. 2A, a frame 110 having a height substantially flush with the upper surface of the light emitting element 101 is disposed on a substrate 107, and titanium oxide is contained in a silicone resin. One light reflecting member 104 is filled in the frame 110 and cured. The particle size of the titanium oxide is set smaller than the gap between the mounted light emitting element 101 and the substrate 107, and the light emitted in the direction of the substrate 107 is prevented from being absorbed by the substrate 107, and the direction of the substrate 107 The light emitted to the light can also be reflected to the light emitting element 102 side to increase the luminous flux.

(Third process)
After the second step, an adhesive is applied to the upper surface of the light emitting element 101, and the light emitting element and the translucent member are bonded. In the present embodiment, as shown in FIG. 2B, after the first light reflecting member 104 is cured, the frame 110 shown in FIG. An adhesive material 103 is applied to the upper surface of the light emitting element 101 exposed from the light reflective member 104, and the light transmissive member 102 is bonded. In this embodiment, a silicone resin is used as the adhesive 103 and is bonded to the translucent member 102 by thermosetting. In addition, a phosphor plate formed by mixing and sintering YAG and alumina is used as the translucent member. Since the light-transmitting member is formed from an inorganic material, a highly reliable light-emitting device with little deterioration can be obtained. The thickness of the adhesive layer after bonding is about 10 μm.

(Fourth process)
Next, the upper surface of the translucent member 102 is exposed, and the side surface of the translucent member 102 is covered with a light reflective member. In this embodiment, as shown in FIG. 3D, the second light reflective member 105 is dropped at several locations so as to cover the side surface of the light transmissive member 102 and the first light reflective member 104. Form.

(Fifth process)
Finally, the aggregate substrate processed in the first to fourth steps is individually cut by dicing to obtain the light emitting device 100 according to Example 1 having a plane of 6.5 mm × 12 mm.

  In this way, the manufactured light emitting device 100 can suppress a decrease in luminous flux without the adhesive material flowing on the side surface of the light emitting element 101 or the substrate 107.

<Example 2>
As Example 2, a method of manufacturing the light emitting device 200 shown in FIG. 4 will be described with reference to FIG. As shown in FIG. 3A, as the first light reflecting member 104, a gel-like resin having a penetration of 20 in which titanium oxide is contained in a silicone resin is used and flipped to the substrate 107 through the bumps 108. The first light reflective member 104 is formed by dropping the light emitting element 101 mounted on the chip so as to cover the side surface. At this time, the first light reflective member 104 is also filled in the gap (between the bumps 108) between the light emitting element 101 and the substrate 107.

  Next, as shown in FIG. 3B and FIG. 3C, the adhesive material 103 is applied to the light emitting surface of the light emitting element 101 exposed from the first reflecting member 104 in the same manner as in Example 1. The translucent member 102 is adhered. Next, as shown in FIG. 3 (d), a metal mask 111, which is a frame, is disposed on the substrate 107, and a second light reflective member 105 having a JIS-A hardness of 70 is formed by screen printing. By forming in this way, a light emitting device 200 as shown in FIG. 4 can be obtained. In this light emitting device 200, since the periphery of the bump 108, which is a joint portion between the light emitting element 101 and the substrate 107, is covered with a soft resin, the resin expansion / contraction stress at the light emitting element joint portion can be relaxed, and the electrical Can improve the reliability of bonding. In addition, since a material having high mechanical strength is used for the second light reflective member 105, durability of the light emitting element 101 and the first light reflective member 104 against external stress can be ensured.

<Example 3>
As the substrate 107, a substrate made of ceramic MID having a cavity provided with wiring formed by laser patterning on the surface of a three-dimensional molded body of aluminum nitride was used. When the light emitting device is formed in the same manner as in Example 1 except that the first light reflecting member 104 and the second light reflecting member 105 are filled in the cavity of the substrate, the light emitting device is formed as shown in FIG. The light emitting device 300 can be obtained. When the cavity is formed in this way, since the sealing using the first reflecting member 104 and the second reflecting member 105 can be performed by potting, the assembly becomes easy. In addition, since the cavity and the light-emitting element mounting portion are formed using aluminum nitride with good heat dissipation, a highly reliable light-emitting device with excellent heat dissipation can be obtained.

<Example 4>
Four 1 mm × 1 mm light emitting elements are flip-chip mounted on the substrate at 0.1 mm intervals, the side surfaces of the respective light emitting elements are covered with the first light reflecting member 104, and the light emitting surface side of the light emitting elements is When a light-emitting device is formed in the same manner as in Example 1 except that one translucent member 102 that covers all the light-emitting elements is used, a light-emitting device as shown in FIGS. 6A and 6B is formed. 400 can be obtained. Thus, the upper surface of the substrate 107 may be exposed from the first light reflective member 104 and the second light reflective member 105. FIG. 6B is a cross-sectional view taken along line AA in FIG.

<Comparative example>
As a comparative example, Example 4 except that after the light emitting element and the translucent member were bonded with an adhesive, a light reflecting member was formed so as to cover the side surface of the light emitting element and the side surface of the translucent member. Similarly formed samples are shown. FIG. 8 shows the luminous fluxes in this sample when the amount of the adhesive is 2.9 mg and 5.8 mg. On the other hand, in Example 4, the luminous flux when the amount of the adhesive is 2.9 mg and when the amount is 5.8 mg is shown in FIG.

  In the light emitting device of Example 4, there was almost no change in the luminous flux due to the change in the amount of the adhesive, whereas in the comparative light emitting device, a significant difference in the luminous flux was caused by the change in the amount of the adhesive. That is, the light emitting device of the embodiment can be manufactured with high mass productivity with little change in the luminous flux even if the amount of adhesive applied varies in the manufacturing process.

  The light emitting device and the manufacturing method thereof according to the present invention can be widely used as home lighting, vehicle lighting, and the like.

100, 200, 300, 400, 500 Light-emitting device 101 Light-emitting element 102 Translucent member 103, 503 Adhesive material 104 First light-reflective member 105 Second light-reflective member 107 Substrate 108 Bump 110 Frame body 111 Metal mask 501 Semiconductor light emitting chip 502 Phosphor chip

Claims (5)

A light-emitting device having a light-emitting element and a light-transmitting member that transmits light emitted from the light-emitting element and emits the light to the outside, and the light-emitting element and the light-transmitting member are bonded to each other with an adhesive A method of manufacturing
A first step of placing the light emitting element on a substrate;
A second step of exposing an upper surface of the light emitting element and covering a side surface of the light emitting element with a first light reflective member;
After the second step, a third step of applying an adhesive on the upper surface and bonding the light emitting element and the light transmissive member;
After the third step, a fourth step of exposing a top surface of the light transmissive member and covering a side surface of the light transmissive member with a second light reflective member;
A method for manufacturing a light-emitting device, comprising:   The method for manufacturing a light-emitting device according to claim 1, further comprising a step of covering a gap between the light-emitting element and the substrate with a light reflective member before the third step.   The method for manufacturing a light emitting device according to claim 1, wherein the fourth step is performed by a printing method.   The method of manufacturing a light emitting device according to claim 1, wherein the first light reflecting member has lower elasticity or lower linear expansion than the second light reflecting member.   The said light emitting element is a light emitting element formed by laminating | stacking a semiconductor layer on the growth substrate, and the said growth substrate has an unevenness | corrugation in the junction surface with the said semiconductor layer. Method for manufacturing the light emitting device.

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