JP2019029512A - Light-emitting device and manufacturing method thereof - Google Patents

Abstract

To manufacture a light-emitting device with improved light extraction efficiency more efficiently.SOLUTION: A manufacturing method of a light-emitting device includes a step (a) of applying an uncured first reflective resin material 21 onto the upper surface of a first support 10 having an upper surface 10a, a step (b) of disposing a light emitting element 110 having an upper surface 110a, a lower surface 110b, and a positive electrode 115 and a negative electrode 116 positioned on the lower surface 110b on the first support with the lower surface of the light-emitting element facing downward such that at least the positive electrode and the negative electrode are buried in the first reflective resin material, and curing the first reflective resin material to obtain a first reflective resin layer 121L, and a step (c) of removing the first support body.SELECTED DRAWING: Figure 11

Description

  The present disclosure relates to a light emitting device and a manufacturing method thereof.

  A semiconductor light emitting device having a structure suitable for mounting by flip chip connection is known. For example, the following Patent Document 1 discloses an LED device having a blue light emitting diode and a connection electrode disposed on the lower surface side of the blue light emitting diode in FIG.

  In the LED device of Patent Document 1, a blue light emitting diode is sealed with a sealing member containing titanium oxide as a reflective material. By covering the side surface of the blue light emitting diode with a sealing member containing a reflective material, the traveling direction of the light emitted from the side surface of the blue light emitting diode is directed to the phosphor layer disposed on the upper surface side of the blue light emitting diode. Light extraction efficiency is improved. In the technique described in Patent Document 1, the light extraction efficiency is further improved by disposing a sealing member on a portion of the lower surface of the blue light emitting diode other than the bump electrode.

JP 2012-124443 A

  It would be beneficial to provide a light emitting device with improved light extraction efficiency while avoiding the complexity of the manufacturing process.

  The manufacturing method of the light emitting device of the present disclosure includes a step (a) of applying an uncured first reflective resin material on the upper surface of the first support having an upper surface, and the upper surface, the lower surface, and the lower surface. The light emitting element having a positive electrode and a negative electrode that perform the first support with the lower surface of the light emitting element facing down so that at least the positive electrode and the negative electrode are embedded in the first reflective resin material. A step (b) of placing on the body, curing the first reflective resin material to obtain a first reflective resin layer, and a step (c) of removing the first support.

  The light-emitting device of the present disclosure has an upper surface, a lower surface, and a side surface located between the upper surface and the lower surface, a light-emitting element having a positive electrode and a negative electrode located on the lower surface, and an upper surface, A region of the lower surface of the light emitting element other than a region where the positive electrode and the negative electrode are disposed, and a first reflective resin portion covering a side surface of the positive electrode and the negative electrode, A part of the upper surface of the resin portion is curved.

  According to an embodiment of the present disclosure, a light emitting device with improved light extraction efficiency can be manufactured more efficiently.

1 is a perspective view illustrating an exemplary light emitting device according to a first embodiment of the present disclosure. FIG. It is a top view of the light emitting device 100A shown in FIG. It is a bottom view of the light emitting device 100A shown in FIG. It is typical IV-IV sectional drawing of FIG. It is a figure for demonstrating the illustrative shape of the 1st reflective resin part 121, and is typical sectional drawing which expands and shows the part shown with the broken-line circle | round | yen V in FIG. 4, and its periphery. is there. 6 is a schematic cross-sectional view showing another exemplary shape of the first reflective resin portion 121. FIG. It is a perspective view which shows the modification of the light-emitting device by 1st Embodiment of this indication. It is a top view of the light-emitting device 100B shown in FIG. It is a bottom view of the light-emitting device 100B shown in FIG. It is typical IX-IX sectional drawing of FIG. It is typical XX sectional drawing of FIG. It is a flowchart which shows the outline | summary of the manufacturing method of the light-emitting device by an embodiment with this indication. It is typical sectional drawing for demonstrating the exemplary manufacturing method of the light-emitting device by embodiment with this indication. It is typical sectional drawing for demonstrating the exemplary manufacturing method of the light-emitting device by embodiment with this indication. It is typical sectional drawing for demonstrating the exemplary manufacturing method of the light-emitting device by embodiment with this indication. It is typical sectional drawing for demonstrating the exemplary manufacturing method of the light-emitting device by embodiment with this indication. It is typical sectional drawing for demonstrating the exemplary manufacturing method of the light-emitting device by embodiment with this indication. It is typical sectional drawing for demonstrating the exemplary manufacturing method of the light-emitting device by embodiment with this indication. It is typical sectional drawing for demonstrating the exemplary manufacturing method of the light-emitting device by embodiment with this indication. It is typical sectional drawing for demonstrating the exemplary manufacturing method of the light-emitting device by embodiment with this indication. It is a typical top view for explaining an exemplary manufacturing method of a light emitting device by an embodiment with this indication. It is typical sectional drawing for demonstrating the modification of the manufacturing method of a light-emitting device. FIG. 6 is a schematic cross-sectional view illustrating another modification of the light emitting device according to the first embodiment of the present disclosure. It is typical sectional drawing for demonstrating the other modification of the manufacturing method of a light-emitting device. FIG. 6 is a schematic cross-sectional view showing still another modification of the light emitting device according to the first embodiment of the present disclosure. FIG. 10 is a schematic plan view for explaining still another modification of the method for manufacturing the light emitting device according to the embodiment of the present disclosure. FIG. 10 is a schematic cross-sectional view for explaining still another modification of the method for manufacturing a light emitting device according to an embodiment of the present disclosure. FIG. 10 is a schematic plan view for explaining still another modification of the method for manufacturing the light emitting device according to the embodiment of the present disclosure. FIG. 10 is a schematic cross-sectional view for explaining still another modification of the method for manufacturing a light emitting device according to an embodiment of the present disclosure. FIG. 10 is a schematic cross-sectional view for explaining still another modification of the method for manufacturing a light emitting device according to an embodiment of the present disclosure. FIG. 10 is a schematic plan view for explaining still another modification of the method for manufacturing the light emitting device according to the embodiment of the present disclosure. FIG. 6 is a perspective view illustrating an exemplary light emitting device according to a second embodiment of the present disclosure. FIG. 29 is a schematic XXIX-XXIX cross-sectional view of FIG. 28. It is a perspective view which shows the modification of the light-emitting device by 2nd Embodiment of this indication. FIG. 31 is a schematic XXXI-XXXI cross-sectional view of FIG. 30. It is typical sectional drawing for demonstrating the exemplary manufacturing method of the light-emitting device by other embodiment of this indication. It is typical sectional drawing for demonstrating the exemplary manufacturing method of the light-emitting device by other embodiment of this indication. It is typical sectional drawing for demonstrating the exemplary manufacturing method of the light-emitting device by other embodiment of this indication. It is typical sectional drawing for demonstrating the exemplary manufacturing method of the light-emitting device by other embodiment of this indication. It is a typical top view for explaining an exemplary manufacturing method of a light emitting device by a certain other embodiment of this indication. It is typical sectional drawing for demonstrating the modification of the manufacturing method of a light-emitting device.

  Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The following embodiment is an exemplification, and the configuration of the light emitting device and the manufacturing method thereof according to the present disclosure are not limited to the following embodiment. For example, the numerical values, shapes, materials, steps, order of the steps, and the like shown in the following embodiments are merely examples, and various modifications are possible as long as no technical contradiction arises.

  The dimensions, shapes, and the like of the components shown in the drawings may be exaggerated for the sake of clarity, and may not reflect the dimensions, shapes, and magnitude relationships between the components in an actual light emitting device. . In addition, in order to avoid the drawing from becoming excessively complicated, illustration of some elements may be omitted.

  In the following description, components having substantially the same function are denoted by common reference numerals, and description thereof may be omitted. In the following description, terms indicating a specific direction or position (eg, “up”, “down”, “right”, “left” and other terms including those terms) may be used. However, these terms only use relative directions or positions in the referenced drawings for clarity. If the relative direction or positional relationship in terms of “upper”, “lower”, etc. in the referenced drawing is the same, it is not the same arrangement as the referenced drawing in drawings, actual products, etc. other than this disclosure. May be. In the present disclosure, “parallel” includes a case where two straight lines, sides, surfaces, and the like are in a range of about 0 ° to ± 5 ° unless otherwise specified. Further, in the present disclosure, “vertical” or “orthogonal” includes a case where two straight lines, sides, surfaces, and the like are in a range of about 90 ° to ± 5 ° unless otherwise specified.

(First embodiment)
1 to 5B show a light emitting device according to the first embodiment of the present disclosure. For reference, FIGS. 1 to 5B show arrows indicating X, Y, and Z directions orthogonal to each other. These arrows may also be shown in other drawings of the present disclosure.

  FIG. 1 is a perspective view of the light emitting device 100A according to the first embodiment of the present disclosure as viewed from the upper surface 100a side, and FIG. 2 is a top view of the light emitting device 100A shown in FIG. In the configuration illustrated in FIGS. 1 and 2, the light emitting device 100A has a rectangular parallelepiped shape as a whole. Here, three mutually perpendicular sides of the rectangular parallelepiped shape are parallel to the X direction, the Y direction, and the Z direction, and as shown in FIG. 2, the light emitting device 100A when viewed along the Z direction in the drawing. The shape of is, for example, a square. The length of one side of the light emitting device 100A when viewed along the Z direction in the figure can be, for example, about 1 mm to 2.5 mm.

  The light emitting device 100A includes a light emitting element 110, a first reflective resin portion 121, and a translucent member 130A. In the configuration illustrated in FIGS. 1 and 2, the light emitting element 110 is located substantially at the center of the light emitting device 100A. As the light emitting element 110, a known semiconductor light emitting element such as an LED (Light Emitting Diode) can be used. The first reflective resin portion 121 is located at the bottom of the light emitting device 100A and has a layer shape extending in parallel to the XY plane of the drawing. The translucent member 130A covers the light emitting element 110. In this example, the translucent member 130A includes a wavelength conversion layer 132A that covers the light emitting element 110 and a translucent layer 134A on the wavelength conversion layer 132A. It is out.

  FIG. 3 shows the lower surface 100b of the light emitting device 100A. The light-emitting element 110 includes a stacked structure 112 including a light-transmitting substrate such as a sapphire substrate and a semiconductor layer over the light-transmitting substrate, a positive electrode 115, and a negative electrode 116. The semiconductor layer in the stacked structure 112 includes an active layer, and an n-type semiconductor layer and a p-type semiconductor layer that sandwich the active layer. The positive electrode 115 and the negative electrode 116 are electrically connected to the semiconductor layer of the stacked structure body 112 and have a function of supplying current to the semiconductor layer.

  As shown in FIG. 3, the lower surface of the positive electrode 115 and the lower surface of the negative electrode 116 are located on the lower surface 100b of the light emitting device 100A, and at least a part of each of them is a first reflection located on the lower surface 100b of the light emitting device 100A. It is exposed from the lower surface of the conductive resin part 121. That is, the first reflective resin portion 121 covers a region other than the region where the positive electrode 115 and the negative electrode 116 are disposed on the lower surface of the light emitting element 110.

  As will be described later, the first reflective resin portion 121 is made of, for example, a resin material in which a light reflective filler is dispersed. The reflectance with respect to the light from the light emitting element 110 of the 1st reflective resin part 121 is 60% or more, for example. The reflectance with respect to the light from the light emitting element 110 may be 70% or more, 80%, or 90% or more, and may be appropriately set. By covering the lower surface of the light emitting element 110 with the first reflective resin portion 121 other than the region where the positive electrode 115 and the negative electrode 116 are disposed, light directed toward the lower surface 100b of the light emitting device 100A is first reflected. The reflective resin portion 121 can reflect the light emitting device 100A toward the upper surface 100a side. In other words, it is possible to improve light extraction efficiency by suppressing light leakage from the lower surface 100b of the light emitting device 100A.

  The positive electrode 115 and the negative electrode 116 are, for example, a single layer film or a multilayer film of a metal or an alloy such as Ag, Al, Au, Cu, Ti, Ni, Pt, Pd, and W. The light emitting device 100A can be mounted on the wiring board by physically and electrically connecting the positive electrode 115 and the negative electrode 116 to the wiring board, for example, by a joining member such as solder. That is, the light emitting device 100A is configured to be compatible with flip chip connection.

  The shapes of the positive electrode 115 and the negative electrode 116 shown in FIG. 3 are merely examples. As shown in FIG. 3, the shape of the portion exposed from the first reflective resin portion 121 is made different between the positive electrode 115 and the negative electrode 116 to determine which of the two electrodes is the positive electrode 115. It becomes easy to distinguish.

  FIG. 4 schematically shows a cross section taken along the line IV-IV in FIG. As shown in FIG. 4, the light emitting element 110 has an upper surface 110a, a lower surface 110b, and a side surface 110c positioned between the upper surface 110a and the lower surface 110b, and the positive electrode 115 and the negative electrode 116 are positioned on the lower surface 110b. Yes. Here, the lower surfaces of the positive electrode 115 and the negative electrode 116 are aligned with the lower surface of the first reflective resin portion 121, and thus the lower surface 100b of the light emitting device 100A is a flat surface here.

  The light emitting element 110 is covered with a translucent member 130A. Light emitted from the light emitting element 110 is extracted to the outside of the light emitting device 100A through the translucent member 130A. As described above, here, the translucent member 130 </ b> A includes the wavelength conversion layer 132 </ b> A and the translucent layer 134 </ b> A that cover the light emitting element 110. In addition, the translucent member which covers the light emitting element 110 should just contain at least one of a wavelength conversion layer and a translucent layer, and one of these may be abbreviate | omitted so that it may mention later.

  As schematically shown in FIG. 4, the wavelength conversion layer 132 </ b> A covers the upper surface 110 a and the side surface 110 c of the light emitting element 110. In this example, since the upper surface 121a of the first reflective resin portion 121 is at a position lower than the upper surface 110a of the light emitting element 110, a part of the wavelength conversion layer 132A protrudes in the Z direction in the drawing.

  The wavelength conversion layer 132A is a layer in which wavelength conversion members such as phosphor particles are dispersed in a resin, for example. The wavelength conversion layer 132 </ b> A absorbs at least part of the light emitted from the light emitting element 110 and emits light having a wavelength different from the wavelength of the emitted light from the light emitting element 110. Note that part of the light emitted from the light emitting element 110 passes through the wavelength conversion layer 132A as it is and enters the light transmitting layer 134A.

  The translucent layer 134A covers the wavelength conversion layer 132A and has translucency. In this specification, the terms “translucent” and “translucent” are interpreted to include diffusibility to incident light and are not limited to being “transparent”. . The translucent layer 134A is distinguished from the wavelength conversion layer 132A in that it does not substantially include a wavelength conversion member such as a phosphor. The transmittance of the light-transmitting layer 134A at the emission peak wavelength of the light-emitting element 110 is typically 60% or more. From the viewpoint of effectively using light, the transmittance of the light-transmitting layer 134A at the emission peak wavelength of the light-emitting element 110 is beneficially 70% or more, and more advantageously 80% or more.

  FIG. 5A is an enlarged view of a portion indicated by a broken-line circle V in FIG. 4 and its surroundings. FIG. 5A shows an exemplary shape of the first reflective resin portion 121. As described above, the first reflective resin portion 121 covers a region other than the region where the positive electrode 115 and the negative electrode 116 are disposed on the lower surface 110 b of the light emitting element 110. As can be seen from FIG. 5A, the first reflective resin portion 121 also covers the side surface 116c of the negative electrode 116 and the side surface of the positive electrode 115 (not shown in FIG. 5A).

  In the configuration illustrated in FIG. 5A, the upper surface 121a of the first reflective resin portion 121 includes a flat portion 121f and a curved surface portion 121w. Compared with the flat portion 121f, the curved surface portion 121w is located closer to the side surface 110c of the light emitting element 110 and is in contact with the side surface 110c of the light emitting element 110. In this example, the flat portion 121f is located between the upper surface 112a of the multilayer structure 112 of the light emitting element 110 and the lower surface 112b of the multilayer structure 112 in the Z direction. The shape of the first reflective resin portion 121 is not limited to this example, and the flat portion 121f is closer to the lower surface 121b of the first reflective resin portion 121 than the lower surface 112b of the multilayer structure 112 in the Z direction. It can also be located. Note that the upper surface 112 a of the stacked structure body 112 coincides with the upper surface 110 a of the light emitting element 110.

  In this example, the contact Ct between the curved surface portion 121w and the side surface 110c of the light emitting element 110 is located closer to the upper surface 112a of the multilayer structure 112 than the flat portion 121f in the Z direction. In other words, in the example shown in FIG. 5A, the contact Ct is located farther from the lower surface 121b of the first reflective resin portion 121 than the flat portion 121f in the Z direction.

  FIG. 5B shows another exemplary shape of the first reflective resin portion 121. As illustrated in FIG. 5B, the contact Ct may be located closer to the lower surface 121b of the first reflective resin portion 121 than the flat portion 121f in the Z direction.

(Modification of the first embodiment)
6 to 10 show modifications of the light emitting device according to the first embodiment of the present disclosure. FIG. 6 is a perspective view of a light emitting device 100B, which is a modification of the light emitting device according to the first embodiment of the present disclosure, viewed from the upper surface 100a side, and FIG. 7 is a top view of the light emitting device 100B illustrated in FIG. is there. The main difference between the light emitting device 100B shown in FIGS. 6 and 7 and the above-described light emitting device 100A is that the light emitting device 100B has a second reflective resin in addition to the first reflective resin portion 121. It is the point which has the part 122 and replaces the translucent member 130A with the translucent member 130B.

  As illustrated in FIG. 6, the light emitting device 100 </ b> B includes a light reflecting member 120 </ b> B including a first reflective resin portion 121 and a second reflective resin portion 122. The 2nd reflective resin part 122 contains the 1st part 122a and the 2nd part 122b which are arrange | positioned at intervals in the X direction of a figure. The first portion 122a and the second portion 122b have a thickness larger than that of the first reflective resin portion 121. Each of the first portion 122a and the second portion 122b has a wall-like structure extending in the Y direction in the figure. In this example, the first reflective resin portion 121 includes the first portion 122a and the second portion 122b. It is sandwiched between. As will be described later, the second reflective resin portion 122 may be formed of a material similar to the material for forming the first reflective resin portion 121. Similar to the first reflective resin portion 121, the reflectance of the second reflective resin portion 122 with respect to the light from the light emitting element 110 is, for example, 60% or more, 70% or more, 80%, or 90% or more. .

  The translucent member 130B includes a wavelength conversion layer 132B and a translucent layer 134B that cover the light emitting element 110, similarly to the above-described translucent member 130A. As shown in FIG. 6, the wavelength conversion layer 132 </ b> B and the translucent layer 134 </ b> B are formed by the upper surface 121 a of the first reflective resin portion 121 and the first portion 122 a and the second portion 122 b of the second reflective resin portion 122. It is located inside the space Cv defined by the inner surface.

  The wavelength conversion layer 132B covers the light emitting element 110 and the first reflective resin portion 121. Here, the translucent layer 134B occupies a portion other than the wavelength conversion layer 132B and the light emitting element 110 in the space Cv. In other words, the upper surface of the light-transmitting layer 134B constitutes a part of the upper surface 100a of the light-emitting device 100B, and the side surface of the light-transmitting layer 134B is a side surface parallel to the ZX plane in the drawing among the side surfaces of the light-emitting device 100B. Part of it. Light emitted from the light emitting element 110 is extracted to the outside of the light emitting device 100B through the wavelength conversion layer 132B or further through the light transmitting layer 134B.

  FIG. 8 shows the lower surface 100b of the light emitting device 100B, and FIG. 9 schematically shows the IX-IX cross section of FIG. Similar to the light emitting device 100A described above, the first reflective resin portion 121 covers a region of the lower surface 110b of the light emitting element 110 other than the region where the positive electrode 115 and the negative electrode 116 are disposed. 8 and 9, the boundary between the first reflective resin portion 121 and the first portion 122a of the second reflective resin portion 122, and the first reflective resin portion 121, A boundary between the second reflective resin portion 122 and the second portion 122b is indicated by a broken line Bd. However, in an actual light emitting device, these boundaries may not be clearly observed. For example, when the 1st reflective resin part 121 and the 2nd reflective resin part 122 are formed with the same material, it is between the 1st reflective resin part 121 and the 2nd reflective resin part 122. Sometimes the boundaries cannot be clearly defined.

  FIG. 10 schematically shows an XX cross section of FIG. The configuration indicated by a broken line circle W in FIG. 10 and the surrounding configuration thereof are described with reference to FIGS. 5A and 5B, and the configuration indicated by the broken line circle V in FIG. Can be similar. Therefore, the illustration of the portion indicated by the broken-line circle W in FIG. 10 and its surroundings is omitted here. Similar to the example described with reference to FIGS. 5A and 5B, the upper surface 121a of the first reflective resin portion 121 of the light emitting device 100B is located closer to the flat portion 121f and the side surface 110c of the light emitting element 110. It may have a curved surface part 121w.

(Exemplary Manufacturing Method of Light-Emitting Device According to First Embodiment)
Next, an example of a method for manufacturing a light emitting device according to an embodiment of the present disclosure will be described.

  FIG. 11 is a flowchart illustrating an outline of a method for manufacturing a light emitting device according to an embodiment of the present disclosure. The manufacturing method of the light-emitting device illustrated in FIG. 11 schematically includes a step of applying an uncured first reflective resin material on the first support (step S1), a positive electrode on the lower surface side, and The first light-emitting element having the negative electrode is disposed on the first support so that at least the positive electrode and the negative electrode are buried in the first reflective resin material, and the first reflective resin material is cured to thereby provide the first. Including a step of obtaining the reflective resin layer (step S2) and a step of removing the first support (step S3). As described below, according to the embodiment of the present disclosure, the light emitting device having the first reflective resin portion 121 can be formed by a simpler method.

  Hereinafter, an exemplary method for manufacturing the light emitting device according to the first embodiment will be described with reference to FIGS.

  First, as shown in FIG. 12, a support 10 that is a first support is prepared. As the support 10, for example, an adhesive sheet can be used. Here, a heat-resistant adhesive sheet attached to the ring frame 31 is used as the support 10. The heat-resistant adhesive sheet as the support 10 is available from Nitto Denko Corporation or Dai Nippon Printing Co., Ltd., and for example, PW-3610A manufactured by Nitto Denko Corporation can be used.

  Next, the uncured first reflective resin material 21 is applied to the upper surface 10 a of the support 10. Here, a ring-shaped shim spacer 32 is disposed on the upper surface 10 a of the support 10, and then the first reflective resin material 21 is applied to a region surrounded by the shim spacer 32.

  As the first reflective resin material 21, a resin material in which a light reflective filler is dispersed can be used. As the light-reflective filler, metal particles or particles of an inorganic material or an organic material having a higher refractive index than the resin material in which the light-reflective filler is dispersed can be used. Examples of light reflective fillers include titanium dioxide, silicon dioxide, zirconium dioxide, potassium titanate, aluminum oxide, aluminum nitride, boron nitride, mullite, niobium oxide, barium sulfate particles, or yttrium oxide and gadolinium oxide. Various rare earth oxide particles. Examples of the resin material in which the light-reflective filler is dispersed include, for example, silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, urea resin, phenol resin, acrylic resin, urethane resin or fluorine resin, or these resins. Resins containing two or more types can be used.

  The thickness of the layer of the first reflective resin material 21 can be adjusted by the thickness of the shim spacer 32. The thickness of the layer of the first reflective resin material 21 is, for example, in the range of about 10 μm to 90 μm, and can be appropriately adjusted according to the thickness of the positive electrode 115 and the negative electrode 116 of the light emitting element 110.

  Next, the light-emitting element 110 including the positive electrode 115 and the negative electrode 116 is prepared. Thereafter, the lower surface 110b of the light emitting element 110 is directed downward, in other words, the lower surface 110b is directed to the support body 10 and the light emitting element 110 is disposed on the support body 10. At this time, as schematically indicated by a thick arrow Ps in FIG. 13, the light emitting element 110 is pressed toward the support 10, and at least the positive electrode 115 and the negative electrode 116 are embedded in the first reflective resin material 21. Typically, the positive electrode 115 and the negative electrode 116 are buried in the first reflective resin material 21 until the surfaces of the positive electrode 115 and the negative electrode 116 are in contact with the upper surface 10 a of the support 10.

  Next, the first reflective resin material 21 is cured. By placing the light emitting element 110 on the support 10 while pressing the light emitting element 110 toward the support 10, the positive electrode 115 and the negative electrode 116 of the first reflective resin material 21 and the support 10 are arranged. Can be pushed away by the positive electrode 115 and the negative electrode 116. By curing the first reflective resin material 21 in this state, as shown in FIG. 14, the first reflective resin material 21 includes a portion located on a region sandwiched between the positive electrode 115 and the negative electrode 116 on the lower surface 110 b of the light emitting element 110. One reflective resin layer 121L can be formed. At this time, by curing the first reflective resin material 21 in a state where the surfaces of the positive electrode 115 and the negative electrode 116 are in contact with the upper surface 10a of the support 10, at least a part of the lower surface of the positive electrode 115 and the negative electrode 116 At least a part of the lower surface can be exposed from the first reflective resin layer 121L. However, it is not essential that the lower surface of the positive electrode 115 and the lower surface of the negative electrode 116 are exposed from the first reflective resin layer 121L at the time of forming the first reflective resin layer 121L.

  When the first reflective resin material 21 before curing is in the A stage state, the first reflective resin material 21 in the B stage state is compared with the case where the positive electrode 115 and the negative electrode 116 are buried. This is useful because it is difficult for the first reflective resin portion 121 to peel off from the light emitting element 110. Further, even when the light-reflective filler is dispersed in the resin material and the viscosity is increased, the layer of the first reflective resin material 21 can be formed relatively easily by, for example, coating or printing. It becomes possible to relatively easily form the first reflective resin portion 121 located on the lower surface 100b of the light emitting device.

  Here, a plurality of light emitting elements 110 are arranged on the support 10. By arranging a plurality of light emitting elements 110 on the support 10, a plurality of light emitting devices can be provided more efficiently. In FIG. 14, the plurality of light emitting elements 110 are arranged along the left-right direction of the paper surface. However, the plurality of light emitting elements 110 can be arranged along a direction perpendicular to the paper surface. Needless to say, the number of the light emitting elements 110 arranged on the support 10 may be one. In this case, it is possible to obtain the first reflective resin portion 121 described above at the stage where the first reflective resin material 21 is cured.

  Next, a light-transmitting structure that covers the light-emitting element 110 is formed. Here, as shown in FIG. 15, first, the wavelength conversion layer 132L is formed. In the example illustrated in FIG. 15, the wavelength conversion layer 132L is disposed on the first reflective resin layer 121L so as to cover the plurality of light emitting elements 110 supported by the support 10. For example, the wavelength conversion layer 132L includes a phosphor sheet in which a resin in a resin material in which phosphor particles are dispersed is placed in a B-stage state on the plurality of light emitting elements 110, and the B-stage resin is cured. Can be formed. A light-transmitting adhesive may be interposed between the light-emitting element 110 and the first reflective resin layer 121L and the phosphor sheet. Alternatively, a slurry containing a phosphor, a resin material such as a silicone resin, inorganic filler particles, and a solvent is applied to the light emitting element 110 and the first reflective property by a coating method such as a spray method, a cast method, a potting method, or a dip coating method. The wavelength conversion layer 132L may be formed by applying on the resin layer 121L and curing the applied material.

A known material can be applied to the phosphor. Examples of the phosphor include a fluoride phosphor such as a YAG phosphor and a KSF phosphor, a nitride phosphor such as CASN, a β sialon phosphor, and the like. The YAG phosphor is an example of a wavelength conversion member that converts blue light into yellow light, and the KSF phosphor and CASN are examples of a wavelength conversion member that converts blue light into red light, and β sialon phosphor Is an example of a wavelength conversion member that converts blue light into green light. The phosphor may be a quantum dot phosphor. The resin material for dispersing the phosphor particles is silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, urea resin, phenol resin, acrylic resin, urethane resin or fluororesin, or two or more of these resins A resin containing can be used. A nitride semiconductor (In _x Al _y Ga _1-xy N, 0 ≦ x, capable of emitting light having a short wavelength that allows the light emitting element 110 to efficiently excite the wavelength conversion member in the wavelength conversion layer 132L. It is useful to include 0 ≦ y, x + y ≦ 1).

  Next, a translucent layer 134L that covers the wavelength conversion layer 132L is formed. Here, the translucent layer 134L which covers the wavelength conversion layer 132L is formed by providing a translucent resin material on the wavelength conversion layer 132L and curing the resin material. Thereby, a light transmitting structure 130L having a laminated structure of the wavelength conversion layer 132L and the light transmitting layer 134L covering the light emitting element 110 is obtained.

  The translucent layer 134L is formed, for example, by forming a resin frame 34 on the wavelength conversion layer 132L as shown in FIG. 16A, filling the inside of the resin frame 34 with a translucent resin material, and curing the resin material. Can be formed. Examples of the resin material for forming the translucent layer 134L include silicone resin, silicone-modified resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, trimethylpentene resin, or polynorbornene resin, or two or more of these. A material containing can be applied. For example, a material having a different refractive index may be dispersed in the resin material for forming the light transmissive layer 134L to give the light transmissive layer 134L a light diffusion function.

  Next, the support 10 and the shim spacer 32 are removed, and the structure separated from the support 10 is inverted and placed on the support 20 as shown in FIG. 16B. That is, here, the translucent layer 134L in the translucent structure 130L faces the upper surface 20a of the support 20. As shown in FIG. 16B, the support 20 can be supported by a ring frame 31. As the support 20, a UV tape whose adhesive strength is reduced by irradiation with ultraviolet rays can be applied.

  Next, if necessary, the structure supported by the support 20 is ground from the first reflective resin layer 121L side by, for example, about 20 μm to 40 μm. When the positive electrode 115 and the negative electrode 116 of the light emitting element 110 are covered with the first reflective resin layer 121L, the positive electrode 115 and the negative electrode 116 can be exposed from the ground surface by this grinding step. At this time, the positive electrode 115 and a part of the negative electrode 116 may be removed together with a part of the first reflective resin layer 121L by grinding.

  Next, the support 20 is removed, and the structure separated from the support 20 is placed on the support 30 as shown in FIG. 16C. At this time, the structure separated from the support 20 is arranged on the support 30 such that the light-transmitting layer 134L in the light-transmitting structure 130L faces the upper surface 30a of the support 30. As the support 30, a known UV tape can be used in the same manner as the support 20.

  As illustrated in FIG. 16C, a metal film 118 covering the lower surface of the positive electrode 115 and the lower surface of the negative electrode 116 may be formed. As the material of the metal film 118, it is advantageous to select a material that is more excellent in corrosion resistance and / or oxidation resistance than materials constituting the positive electrode 115 and the negative electrode 116. For example, the positive electrode 115 and the negative electrode 116 can be prevented from being corroded by covering the positive electrode 115 and the negative electrode 116 with a material that does not easily corrode.

  An example of the material of the metal film 118 covering the lower surface of the positive electrode 115 and the lower surface of the negative electrode 116 is a platinum group element such as Pt or Au. The metal film 118 may be a single layer film or a laminated film. When the light emitting device is connected to a wiring board or the like by solder, the wettability with respect to the solder is improved when the outermost surface with which the solder contacts is an Au film. When the metal film 118 includes a layer formed of a high melting point metal, such as Ru, Mo, Ta, or the like, such a layer functions as a diffusion preventing layer that reduces diffusion of Sn contained in the solder. This is useful. In other words, the diffusion of Sn contained in the solder into the positive electrode 115 or the negative electrode 116 or the layer close to the positive electrode 115 or the negative electrode 116 in the metal film 118 can be reduced. As a laminated structure having such a diffusion preventing function, a structure in which Ni / Ru / Au, Ti / Pt / Au, or the like is laminated in order from the positive electrode 115 or the negative electrode 116 can be given. For example, the thickness of the Ru film functioning as the diffusion preventing layer is, for example, about 10 to 1000 mm. In the following drawings, illustration of the metal film 118 is omitted.

  Next, the structure on the support 30 is separated from the support 30 and placed on the support 40 as shown in FIG. 16D. At this time, the structure separated from the support 30 is disposed on the support 40 such that the light-transmitting layer 134L faces the upper surface 40a of the support 40. As the support 40, a known UV tape, for example, a dicing tape can be used in the same manner as the support 20 and the support 30.

  Next, as schematically illustrated by a broken line Dc in FIGS. 16D and 17, the first reflective resin layer 121 </ b> L and the translucent structure 130 </ b> L are cut between the light emitting elements 110. Here, for example, the first reflective resin layer 121L, the wavelength conversion layer 132L, and the translucent layer 134L are cut along the X direction and the Y direction by a dicing apparatus. After cutting along the X direction and the Y direction, the support 40 is removed to obtain the light emitting device 100A shown in FIG.

  In the example described here, the wavelength conversion layer 132L and the translucent layer 134L are sequentially formed on the first reflective resin layer 121L. However, as described above, in the manufacturing method according to the embodiment of the present disclosure, it is not essential to form both the wavelength conversion layer 132L and the translucent layer 134L, and the formation of one of these can be omitted. It is.

  For example, in the step of forming the wavelength conversion layer 132L that covers the light emitting element 110, as shown in FIG. 18, the resin frame 34 is provided on the first reflective resin layer 121L, and the inside of the resin frame 34 is disposed inside the wavelength conversion layer 132L. It is possible to obtain the wavelength conversion layer 132 </ b> L as a light transmitting structure by filling with the above material and curing the filled material. After that, as schematically shown by a broken line Dc in FIG. 18, the first reflective resin layer 121 </ b> L and the wavelength conversion layer 132 </ b> L are cut at positions between the plurality of light emitting elements 110, as illustrated in FIG. 19. A plurality of light emitting devices 100C having a part of the wavelength conversion layer 132L as the translucent member 130C is obtained. Instead of filling the inside of the resin frame 34 with the material of the wavelength conversion layer 132L, for example, transfer molding or the like may be applied.

  Alternatively, as shown in FIG. 20, the step of forming the wavelength conversion layer 132L is omitted, and a light-transmitting layer 134L covering the light-emitting element 110 is formed as a light-transmitting structure on the first reflective resin layer 121L. Also good. After that, as schematically shown by a broken line Dc in FIG. 20, the first reflective resin layer 121 </ b> L and the translucent layer 134 </ b> L are cut at positions between the plurality of light emitting elements 110, as illustrated in FIG. 21. Thus, a plurality of light emitting devices 100D having a part of the light transmissive layer 134L as the light transmissive member 130D are obtained. 18 and 20, the singulation is performed in a state where the plurality of light emitting elements 110 are supported by the support 10, but the description has been given with reference to FIGS. 16B to 16D. As described above, the structure on the support 10 may be reversed and placed on another support, and the first reflective resin layer 121L may be ground, the metal film 118 may be formed, and the like may be singulated.

  Next, an exemplary manufacturing method of the light emitting device 100B illustrated in FIG. 6 will be described. A process until the light emitting element 110 is covered with at least one of the wavelength conversion layer 132L and the light transmitting layer 134L and the positive electrode 115 and the negative electrode 116 are exposed from the first reflective resin layer 121L is described with reference to FIGS. Since the steps described can be the same, the illustration and detailed description of these steps are omitted here.

  After the positive electrode 115 and the negative electrode 116 are exposed from the first reflective resin layer 121L and the metal film 118 is formed as necessary (see FIG. 16C), a plurality of layers are formed as schematically shown by a broken line Dc in FIG. 16D. The first reflective resin layer 121L and the translucent structure 130L are cut between the light emitting elements 110. However, here, as schematically shown by a broken line Dc in FIG. 22, a plurality of light emitters 200 each including a plurality of light emitting elements 110 are formed by performing cutting along the X direction.

  Next, the support body 40 is removed, and as shown in FIGS. 23 and 24, the plurality of light emitting bodies 200 separated from the support body 40 are disposed on the support body 50 that is the second support body. At this time, as shown in FIG. 23, the plurality of light emitting bodies 200 are arranged on the support 50 so as to be spaced apart from each other so that the positive electrode 115 and the negative electrode 116 are in contact with the support 50. In the case where the metal film 118 is formed on the positive electrode 115 and the negative electrode 116, a plurality of light emitters 200 may be disposed on the support 50 with the metal film 118 in contact with the support 50 and spaced from each other. Good. As the support 50, a heat-resistant pressure-sensitive adhesive sheet can be used in the same manner as the support 10. The support body 50 can be supported by a ring frame, for example.

  Next, as shown in FIG. 25, the plurality of light emitters 200 on the support 50 are covered with an uncured second reflective resin material 22. After the plurality of light emitters 200 are covered with the second reflective resin material 22, the second reflective resin material 22 is cured. By curing the second reflective resin material 22, a resin layer covering the light emitting body 200 can be formed. As the second reflective resin material 22, similarly to the first reflective resin material 21, a resin material in which a light reflective filler is dispersed can be used. The second reflective resin material 22 and the first reflective resin material 21 described above need not be the same. For example, the content of the light reflective filler may be different between the second reflective resin material 22 and the first reflective resin material 21.

  Formation of the resin layer covering the light emitting body 200 is performed by, for example, transfer molding. When the compression molding method is applied, an epoxy-based or silicone-based powder mold compound or the like may be used. Alternatively, the second reflective resin material 22 may be applied by forming a resin frame on the support 50 and filling the inside of the resin frame with the second reflective resin material 22.

  Next, as shown in FIG. 26, the support 50 is removed, and the structure separated from the support 50 is placed on the support 60. As the support 60, a known UV tape can be used as in the support 20. The support body 60 can be supported by a ring frame, for example. Thereafter, the second reflective resin layer 122L is formed by grinding the cured second reflective resin material 22 until the translucent structure 130L is exposed. In this example, as a result of grinding, the upper surface of the second reflective resin layer 122L is in a state in which the translucent layer 134L is exposed from the ground surface Gs as shown in FIG. At this time, a part of the translucent structure 130L may be removed together with a part of the second reflective resin material 22 after curing. For forming the grinding surface Gs, for example, lapping, grinding using a surface grinding machine, or the like can be applied. The thickness of the second reflective resin layer 122L, that is, the distance in the Z direction from the upper surface 60a of the support 60 to the grinding surface Gs can be, for example, in the range of about 250 to 500 μm.

  Next, the second reflective resin layer 122L is cut between the plurality of light emitters 200. That is, as schematically shown by a broken line Dc1 in FIGS. 26 and 27, the second reflective resin layer 122L is cut at a position between two light emitters 200 adjacent to each other in the Y direction. In addition, as schematically indicated by a broken line Dc2 in FIG. 27, the light emitter 200 and the second reflective resin layer 122L are cut along the X direction at a position between the light emitting elements 110 included in each light emitter 200. To do. A structure including the light emitting element 110 is obtained by cutting along the Y direction and cutting along the X direction. For example, a dicing apparatus can be applied to the cutting along the Y direction and the cutting along the X direction. Note that, as described with reference to FIG. 16D, the structure on the support 60 may be replaced with another support such as a dicing tape, and then the singulation may be performed. Further, at this time, the structure on the support 60 may be arranged on another support with the translucent structure 130L facing the support. The order of cutting along the Y direction and cutting along the X direction is arbitrary, and either may be executed first.

  Through the process of separating the light emitting elements 110, the first reflective resin layer 121L, the translucent structure 130L, and the second reflective resin layer 122L are divided into units each including one light emitting element 110. . Thereby, the first reflective resin portion 121, the wavelength conversion layer 132B, the translucent layer 134B, and the second reflective resin portion 122 including the first portion 122a and the second portion 122b are formed. The After the light emitting element 110 is singulated, the support that supports the singulated structure is removed, whereby the light emitting device 100B shown in FIG. 6 is obtained. Note that, in the cutting process along the Y direction and the cutting process along the X direction, each may be divided into units including a plurality of light emitting elements 110. That is, a light-emitting device that includes two or more light-emitting elements 110 may be obtained.

  Alternatively, a plurality of light emitters each including the plurality of light emitting elements 110 are formed from a structure in which the plurality of light emitting elements 110 are covered with the wavelength conversion layer 132L or the light transmitting layer 134L (see FIGS. 18 and 20). A plurality of light emitting devices may be obtained by singulation after covering a light emitting body with the second reflective resin material 22. In this case, in the step of grinding the second reflective resin material 22 after curing, the wavelength conversion layer 132L or the light transmitting layer 134L is exposed from the ground surface Gs.

  In the example described above, since the first reflective resin material 21 is cured in a state where the positive electrode 115 and the negative electrode 116 of the light emitting element 110 are embedded in the uncured first reflective resin material 21, light emission is performed. The first reflective resin portion 121 located on the lower surface 110b side of the element 110 can be obtained by a simpler process. Further, by covering the light emitting element 110 with the wavelength conversion layers 132A and 132B, light having a wavelength different from the wavelength of the emitted light from the light emitting element 110 can be emitted from the light emitting device. In the configuration having the light transmissive layers 134A and 134B on the wavelength conversion layers 132A and 132B, the light transmissive layer functions as a protective layer of the wavelength conversion layer.

  As described with reference to FIGS. 25 to 27, the entire light emitting element 110 is covered with the uncured second reflective resin material 22, and grinding and cutting are performed on the cured layer of the second reflective resin material 22. By forming the second reflective resin portion 122 by, for example, the directivity characteristics of the light emitting device 100B can be adjusted. In the configuration illustrated in FIG. 6, the second reflective resin portion 122 includes a first portion 122 a and a second portion 122 b that are spaced apart in the X direction. By including the first portion 122a and the second portion 122b in the second reflective resin portion 122, a component parallel to the X direction of the light emitted from the wavelength conversion layer 132B is directed to the Y direction or the Z direction. Can be reflected. As a result, different directivity characteristics are obtained between the ZX plane and the YZ plane.

  The number of light emitting elements 110 arranged in the uncured first reflective resin material 21 may be one. In this case, a translucent structure 130L that covers the light emitting element 110 is formed, and the entire light emitting element 110 in which the translucent structure 130L is disposed on the upper surface 110a side is covered with the uncured second reflective resin material 22. The second reflective resin material 22 may be cured. The second reflective resin portion 122 can be formed by grinding the upper surface of the cured second reflective resin material 22 to expose, for example, the light transmitting layer.

(Second Embodiment)
FIG. 28 illustrates a light emitting device according to the second embodiment of the present disclosure. A light emitting device 100E illustrated in FIG. 28 includes a light emitting element 110, a light reflecting member 120E, and a translucent member 130E that covers the light emitting element 110. In this example, the translucent member 130E covering the light emitting element 110 includes a wavelength conversion layer 132E and a translucent layer 134E on the wavelength conversion layer 132E. However, as in the first embodiment, it is not essential that the translucent member 130E includes both the wavelength conversion layer 132E and the translucent layer 134E, and one of these may be omitted.

  The light reflecting member 120E includes a layered first reflective resin portion 123 located on the lower surface 100b of the light emitting device 100E and a second reflective resin portion 124 located above the first reflective resin portion 123. Including. In the configuration illustrated in FIG. 28, the second reflective resin portion 124 has a shape that surrounds the wavelength conversion layer 132E and the translucent layer 134E. In FIG. 28, as in FIGS. 8 and 9, the boundary between the first reflective resin portion 123 and the second reflective resin portion 124 is indicated by a broken line Bd. However, as described above, in an actual light emitting device, these boundaries may not be clearly observed.

  FIG. 29 schematically shows a XXIX-XXIX cross section of FIG. As shown in FIG. 29, the first reflective resin portion 123 located on the lower surface 100b of the light emitting device 100E has a region other than the region where the positive electrode 115 and the negative electrode 116 are disposed on the lower surface 110b of the light emitting element 110; The point which covers the side surface of the positive electrode 115 and the negative electrode 116 is common to 1st Embodiment. The second reflective resin portion 124 has a height that reaches the upper surface of the translucent layer 134 </ b> E from the upper surface of the first reflective resin portion 123, and surrounds the side surface 110 c of the light emitting element 110. By forming the second reflective resin portion 124 so as to surround the side surface 110c of the light emitting element 110, the light emitted from the side surface 110c is directed, for example, upward of the light emitting device 100E by the second reflective resin portion 124. It can be reflected and taken out to the outside through the translucent member 130E. In other words, the light extraction efficiency can be further improved. In addition, as compared with the first embodiment, it is possible to obtain a light distribution with improved directivity with respect to the YZ plane.

  When attention is paid to the wavelength conversion layer 132E and the translucent layer 134E, the wavelength conversion layer 132E and the translucent layer 134E of the present embodiment are both flat and are located above the light emitting element 110. In this example, a translucent resin layer 150E is interposed between the upper surface 110a of the light emitting element 110 and the wavelength conversion layer 132E.

  FIG. 30 shows a modification of the light emitting device according to the second embodiment of the present disclosure. FIG. 31 is a schematic XXXI-XXXI sectional view of FIG. 30. Compared with the light emitting device 100E described with reference to FIGS. 28 and 29, the light emitting device 100F shown in FIGS. 30 and 31 replaces the light reflecting member 120E with the first reflective resin portion 123 and the second light emitting device 100E. The light reflecting member 120F including the reflective resin portion 125 is provided.

  Also in this example, the translucent member 130E includes a wavelength conversion layer 132E and a translucent layer 134E. However, here, the wavelength conversion layer 132E and the translucent layer 134E have a larger area than the upper surface 110a of the light emitting element 110. Note that one of the wavelength conversion layer 132E and the translucent layer 134E may be omitted as in the first embodiment.

  As shown in FIG. 31, in this example, the light emitting device 100F includes at least a part of the first portion 161 positioned between the upper surface 110a of the light emitting element 110 and the wavelength conversion layer 132E and the side surface 110c of the light emitting element 110. It has the light guide member 160 including the 2nd part 162 to cover. The second reflective resin portion 125 of the light reflecting member 120 </ b> F includes a second portion 162 of the light guide member 160 and a region of the side surface 110 c of the light emitting element 110 that is not covered by the second portion 162 of the light guide member 160. Covering. As in this example, by providing the light guide member 160 having the second portion 162 that covers at least a part of the side surface 110c of the light emitting element 110, the light directed toward the side of the light emitting element 110 is transmitted to the second portion 162 and the second portion 162. It can be reflected at the interface with the reflective resin portion 125. That is, light directed toward the side of the light emitting element 110 can be reflected toward the upper surface 100a side of the light emitting device 100F, so that more light can be extracted.

(Exemplary Manufacturing Method of Light-Emitting Device According to Second Embodiment)
Hereinafter, an exemplary method for manufacturing the light emitting device according to the second embodiment will be described with reference to FIGS.

  FIG. 32 shows a state in which a plurality of light emitting elements 110 are arranged on the support 10 and the first reflective resin layer 123L is formed on the support 10. As shown in the drawing, the first reflective resin layer 123L covers a region of the lower surface 110b of the light emitting element 110 other than the region where the positive electrode 115 and the negative electrode 116 are disposed, and the side surfaces of the positive electrode 115 and the negative electrode 116. Yes. The process until obtaining the first reflective resin layer 123L may be the same as the process described with reference to FIGS. That is, the light emitting element 110 is disposed on the support 10 provided with the uncured first reflective resin material, and the first positive electrode 115 and the negative electrode 116 are embedded in the first reflective resin material. The reflective resin material may be cured.

  Next, a translucent structure is disposed on the upper surface 110 a of the light emitting element 110. As shown in FIG. 32, here, a plate-like light transmitting structure 130 </ b> M including a laminated structure of the wavelength conversion layer 132 </ b> E and the light transmitting layer 134 </ b> E is disposed on the upper surface 110 a of the light emitting element 110. Here, the light-transmitting adhesive 150 is applied to the upper surface 110 a of the light-emitting element 110, and the light-transmitting structure 130 </ b> M is bonded to the upper surface 110 a of the light-emitting element 110 with the adhesive 150. As the adhesive 150, a translucent resin such as a silicone resin, a silicone-modified resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, a trimethylpentene resin or a polynorbornene resin, or a material containing two or more of these is used. Can be used. In this example, the translucent layer 134E is located on the first surface 130a side of the first surface 130a and the second surface 130b located on the opposite side of the first surface 130a of the wavelength conversion layer 132E. With the second surface 130b facing the upper surface 110a of the light emitting element 110, the translucent structure 130M is disposed above the light emitting element 110 via the adhesive 150.

  The translucent structure 130M can be manufactured as follows, for example. A phosphor sheet in which the resin in the resin material in which the phosphor particles are dispersed is in a B-stage state and a sheet of translucent resin (hereinafter simply referred to as “translucent sheet”) are prepared. Paste these together. Alternatively, a slurry containing a phosphor, a resin material such as a silicone resin, inorganic filler particles and a solvent is applied on one main surface of the translucent sheet by a coating method such as a spray method, a cast method, or a potting method, The applied material is cured. By these methods, a laminate of a phosphor sheet and a translucent sheet is obtained. Further, here, after the resin constituting the phosphor sheet is cured, the laminate of the phosphor sheet and the translucent sheet is cut into a size suitable for the light emitting element 110 to obtain a plurality of translucent structures 130M. Yes. The size of the translucent structure 130M does not need to match the size of the light emitting element 110, and may be larger than the size of the light emitting element 110 in consideration of the alignment margin.

  After the translucent structure 130M is disposed above the light emitting element 110, the adhesive 150 is cured. Accordingly, as shown in FIG. 33, a structure in which the light-transmitting resin layer 150E, the wavelength conversion layer 132E, and the light-transmitting layer 134E are stacked on the upper surface 110a of the light emitting element 110 can be obtained. Note that a similar structure can be obtained by arranging a light-transmitting sheet or a glass plate on the phosphor sheet after bonding the phosphor sheet to the upper surface 110a of the light emitting element 110 with the adhesive 150. Alternatively, by applying a material for forming the wavelength conversion layer 132E to the upper surface 110a of the light emitting element 110, by further overlapping a light-transmitting sheet for each light emitting element 110, the material of the wavelength conversion layer 132E is cured, The wavelength conversion layer 132E and the light transmitting layer 134E may be formed on the upper surface 110a side of the light emitting element 110. In this case, the translucent resin layer 150E between the light emitting element 110 and the wavelength conversion layer 132E can be omitted.

  Next, as shown in FIG. 34, the entire light emitting element 110 in which the translucent structure 130M is arranged on the upper surface 110a side is covered with an uncured second reflective resin material 24. As the second reflective resin material 24, the same material as the second reflective resin material 22 described above can be used. After the plurality of light emitting elements 110 are covered with the second reflective resin material 24, the second reflective resin material 24 is cured to form a resin layer that covers the light emitting elements 110. For example, a method such as transfer molding, printing, potting, compression molding, spraying, or the like can be applied to the formation of the resin layer that covers the light emitting element 110.

  After the second reflective resin material 24 is cured, as shown in FIG. 35, the support 10 and the shim spacer 32 are removed, and a separation structure is disposed on the support 25 from the support 10. As the support 25, a known UV tape can be used as in the above-described support 20. Here, the support 25 is supported by the ring frame 31.

  The second reflective resin layer 124L is formed by removing a part of the second reflective resin material 24 from the opposite side to the first reflective resin layer 123L, for example, by grinding. As shown in FIG. 35, after the grinding is finished, the grinding surface Gs constituting the upper surface of the second reflective resin layer 124L is at the position of each light emitting element 110, and the translucent layer 134E of the translucent structure 130M. Will be exposed.

  Next, as schematically shown by broken lines Dc1 and Dc2 in FIG. 35 and FIG. 36, the first reflective resin layer 123L and the second reflective resin layer 124L are cut between the plurality of light emitting elements 110. To do. By separating the plurality of light emitting elements 110 by cutting, the first reflective resin portion 123 and the second reflective resin portion are respectively separated from the first reflective resin layer 123L and the second reflective resin layer 124L. 124 is formed. Prior to separation of the plurality of light emitting elements 110, as described with reference to FIGS. 16B and 16C, the structure on the support 10 or the support 25 is oriented with the first reflective resin layer 123L facing upward. May be disposed on another support, and grinding of the first reflective resin layer 123L, formation of the metal film 118, or the like may be performed.

  Thereafter, the support that supports the separated structure is removed, and the structure that includes the light emitting element 110 is separated from the support, whereby the light emitting device 100E shown in FIGS. 28 and 29 is obtained. For example, if a plate-like structure in which one of the wavelength conversion layer 132E and the light transmission layer 134E is omitted is used as the light transmission structure 130M, a configuration in which one of the wavelength conversion layer 132E and the light transmission layer 134E is omitted. A light emitting device having the same is obtained.

  In order to obtain the light emitting device 100F shown in FIGS. 30 and 31, for example, the following may be performed. Similar to the process described with reference to FIG. 32 in the above example, a light-transmitting adhesive is applied to the upper surface 110 a of the light emitting element 110. In addition, a plate-like translucent structure 130M including a laminated structure of the wavelength conversion layer 132E and the translucent layer 134E is prepared. At this time, a translucent structure 130M having an area larger than the area of the upper surface 110a of the light emitting element 110 is prepared.

  Next, the translucent structure 130 </ b> M is bonded to the upper surface 110 a of the light emitting element 110 through a translucent adhesive. At this time, the light-transmitting structure 130M is appropriately pressed toward the upper surface 110a of the light-emitting element 110, whereby a part of the adhesive is placed between the light-transmitting structure 130M and the upper surface 110a of the light-emitting element 110. It can flow on the side surface 110c. As shown in FIG. 37, the light guide having the first portion 161 and the second portion 162 is cured by curing the adhesive with a portion of the adhesive disposed on at least a portion of the side surface 110c of the light emitting element 110. The member 160 can be formed.

  Subsequent processes are the same as those described with reference to FIGS. The entire light emitting element 110 on which the translucent structure 130 </ b> M is disposed is covered with an uncured second reflective resin material 24. After the second reflective resin material 24 is cured, the second reflective resin layer 124L is formed by grinding the upper surface of the second reflective resin material 24 until the translucent layer 134E appears. Thereafter, if the separation is performed, the second reflective resin portion 125 is formed from the second reflective resin layer 124L, and the light emitting device 100F shown in FIGS. 30 and 31 can be obtained.

  According to the second embodiment, as in the first embodiment, the first reflective resin portion 123 located on the lower surface 110b side of the light emitting element 110 can be formed by a simpler process. In the example described with reference to FIGS. 32 to 37, the light transmitting structure 130M including the wavelength conversion layer 132E and the light transmitting layer 134E is disposed on the upper surface 110a of each light emitting element 110. A structure having a translucent member 130E including the wavelength conversion layer 132E and the translucent layer 134E can be obtained. Furthermore, since the structure having the light emitting element 110, the light transmitting layer 134E, and the wavelength conversion layer 132E is covered with the second reflective resin material 24, the second reflection surrounding the light emitting element 110, the light transmitting layer 134E, and the wavelength conversion layer 132E. The light reflecting member 120E having the conductive resin portion 124 or the light reflecting member 120F having the second reflective resin portion 125 can be formed. As shown in FIGS. 28 to 31, the side surfaces of the light emitting element 110 and the translucent member 130 </ b> E are covered with the second reflective resin portion 124 or 125, so that light distribution with improved directional characteristics can be realized. .

  A plurality of light emitting elements 110 are arranged on the support 10, and after the formation of the second reflective resin layer 124 </ b> L, the first reflective resin layer 123 </ b> L and the second reflective resin layer 124 </ b> L are disposed between the plurality of light emitting elements 110. By cutting at this position, the productivity of the light emitting device can be improved as in the first embodiment. At this time, the cutting may be performed so that each is divided into units including a plurality of light emitting elements 110.

  Embodiments of the present disclosure are useful for providing various illumination light sources, in-vehicle light sources, backlight light sources, display light sources, and the like.

10, 20, 25, 30, 40, 50, 60 Supports 100A to 100F Light-emitting device 100a Light-emitting device upper surface 100b Light-emitting device lower surface 110 Light-emitting device 110a Light-emitting device upper surface 110b Light-emitting device lower surface 110c Light-emitting device side surface 112 Lamination Structure 115 Positive electrode 116 Negative electrode 120B, 120E, 120F Light reflecting member 121, 123 First reflective resin part 121a Upper surface of first reflective resin part 121b Lower surface of first reflective resin part 121L, 123L First Reflective resin layer 122, 124, 125 Second reflective resin portion 122L, 124L Second reflective resin layer 130A-130E Translucent member 132A, 132B, 132E, 132L Wavelength conversion layer 134A, 134B, 134E, 134L Translucent layer 130L, 130M Translucent structure 150E RESIN layer 160 guide member 200 illuminant

Claims (15)

Applying the uncured first reflective resin material onto the top surface of the first support having a top surface (a);
A light emitting device having an upper surface and a lower surface, and a positive electrode and a negative electrode located on the lower surface, the lower surface of the light emitting device is placed on the lower side so that at least the positive electrode and the negative electrode are embedded in the first reflective resin material. A step (b) of disposing on the first support and curing the first reflective resin material to obtain a first reflective resin layer;
And a step (c) of removing the first support.   The light emission according to claim 1, wherein in the step (b), the positive electrode and the negative electrode are buried in the first reflective resin material until the positive electrode and the negative electrode are in contact with the upper surface of the first support. Device manufacturing method. After step (b)
The manufacturing method of the light-emitting device of Claim 1 or 2 which further includes the process (d) of forming the translucent structure which covers the said light emitting element. A step (e) of covering the entire light emitting element on which the light transmitting structure is formed with an uncured second reflective resin material and curing the second reflective resin material;
A step (f) of removing a part of the second reflective resin material after curing by grinding to form a second reflective resin layer having a ground surface from which the light transmitting structure is exposed; and The manufacturing method of the light-emitting device of Claim 3 containing.   The step (d) includes one or both of a step (d1) of forming a wavelength conversion layer covering the light emitting element and a step (d2) of forming a light transmitting layer covering the light emitting element. A method for manufacturing the light emitting device according to claim 1.   The method for manufacturing a light emitting device according to claim 1, wherein the step (b) includes a step (b1) of arranging a plurality of the light emitting elements on the first support. After the step (b1),
Forming a translucent structure covering the plurality of light emitting elements (d);
A step (e) of obtaining a plurality of light emitters each including one or more of the light emitting elements by cutting the first reflective resin layer and the light transmitting structure between the plurality of light emitting elements; Including
After the step (c), a step (f) of disposing the plurality of light emitters on the second support so that the positive electrode and the negative electrode are in contact with each other;
Covering the plurality of light emitters on the second support with an uncured second reflective resin material and curing the second reflective resin material (g);
Removing a part of the second reflective resin material after curing by grinding to form a second reflective resin layer having a ground surface where the translucent structure is exposed; and (h)
Cutting the second reflective resin layer between the plurality of light emitters, cutting the light emitter and the second reflective resin layer between the light emitting elements included in each light emitter, and the plurality of light emitting elements; The manufacturing method of the light-emitting device of Claim 6 which further includes the process (i) which divides this into pieces.   The step (d) includes one or both of a step (d1) of forming a wavelength conversion layer covering the plurality of light emitting elements and a step (d2) of forming a light transmitting layer covering the plurality of light emitting elements. Item 8. A method for manufacturing a light emitting device according to Item 7.   The light emitting device according to claim 1, further comprising a step (d) of disposing a plate-like light transmitting structure on the upper surface of the light emitting element via a light transmitting resin after the step (b). Manufacturing method.   The said process (d) includes the process (d1) of arrange | positioning the said translucent resin on at least one part of the side surface located between the said upper surface and the said lower surface of the said light emitting element. Manufacturing method of light-emitting device. The translucent structure has a laminated structure including a translucent layer and a wavelength conversion layer,
In the step (d), the surface of the laminated structure on the wavelength conversion layer side is directed to the upper surface of the light emitting element, and the light transmitting structure is disposed on the upper surface of the light emitting element through the light transmitting resin. The manufacturing method of the light-emitting device according to claim 9 or 10, wherein the light-emitting device is arranged. After step (d)
A step (e) of covering the entire light emitting element in which the translucent structure is disposed on the upper surface side with an uncured second reflective resin material and curing the second reflective resin material;
A step (f) of removing a part of the second reflective resin material after curing by grinding to form a second reflective resin layer having a ground surface from which the light transmitting structure is exposed; and The manufacturing method of the light-emitting device in any one of Claim 9 to 11 containing.   The method of manufacturing a light emitting device according to claim 12, wherein the step (b) includes a step (b1) of disposing a plurality of the light emitting elements on the first support.   The method further includes a step (g) of cutting the first reflective resin layer and the second reflective resin layer between the plurality of light emitting elements to separate the plurality of light emitting elements into pieces. The manufacturing method of the light-emitting device of description. A light emitting device having an upper surface, a lower surface, and a side surface located between the upper surface and the lower surface, and having a positive electrode and a negative electrode located on the lower surface;
A first reflective resin portion that has an upper surface and covers at least a region of the lower surface of the light emitting element other than a region where the positive electrode and the negative electrode are disposed, and a side surface of the positive electrode and the negative electrode. ,
A part of the upper surface of the first reflective resin portion is a light emitting device having a curved surface shape.

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