JP6888296B2 - Manufacturing method of light emitting device - Google Patents

Description

The present disclosure relates to a method for manufacturing a light emitting device.

A semiconductor light emitting device having a structure in which the bottom surface and side surfaces of a semiconductor light emitting element are covered with a resin material and an electrode pair for supplying power to the semiconductor light emitting element is provided on the bottom surface which is a surface opposite to the light emitting side. Are known. According to such a configuration, the area of the electrode can be expanded with respect to the area of the positive electrode and the negative electrode of the semiconductor light emitting element, and easier mounting on a wiring substrate or the like (for example, mounting by flip chip connection) becomes possible.

For example, in Patent Document 1 below, an LED device in which an electrode connected to a bump electrode of an LED element is provided on the bottom surface of a sealing member that covers a side surface of the LED element and a portion of the bottom surface where the bump electrode is not arranged. , And its manufacturing method. As described in Patent Document 1, the electrode on the bottom surface of the sealing member is generally formed by forming a metal film on the bottom surface of the sealing member by using electrolytic plating or the like, and further patterning the metal film. Will be done.

Japanese Unexamined Patent Publication No. 2012-124443

However, in the conventionally known method, a process such as resist coating, development, and etching is required for forming an electrode for connection to a wiring board or the like, and the manufacturing process is complicated. Therefore, it is beneficial to be able to form electrodes for connection to a wiring board or the like by a simpler method.

The method for manufacturing the light emitting device of the present disclosure includes a step (A) of preparing a conductive substrate having a first groove on the surface and a light emitting body having a top surface and a bottom surface and having a positive electrode and a negative electrode on the bottom surface side. A step (B), a step (C) of connecting the positive electrode and the negative electrode to the conductive substrate across the first groove portion, and a step (D) of forming a resin layer covering the light emitting body on the conductive substrate. ), The conductive substrate was thinned from the side opposite to the resin layer until the bottom of the first groove was removed, and the first electrode and the negative electrode connected to the positive electrode were separated from each other. The step (E) of forming the connected second electrode is included.

According to the embodiment of the present disclosure, electrodes for connection to a wiring board or the like can be formed by a simpler method, and productivity can be improved.

FIG. 1A is a flowchart showing an outline of a method for manufacturing a light emitting device according to an embodiment of the present disclosure. FIG. 1B is a flowchart showing an outline of a method for manufacturing a light emitting device according to another embodiment of the present disclosure. FIG. 2 is a diagram showing the top surface, cross section, and bottom surface of an exemplary light emitting device obtained by the manufacturing method according to an embodiment of the present disclosure. FIG. 3 is a diagram showing a schematic top view and a cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to an embodiment of the present disclosure. FIG. 4 is a schematic cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to an embodiment of the present disclosure. FIG. 5 is a diagram showing a schematic top view and a cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to an embodiment of the present disclosure. FIG. 6 is a diagram showing a schematic top view and a cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to an embodiment of the present disclosure. FIG. 7 is a schematic cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to an embodiment of the present disclosure. FIG. 8 is a diagram showing a schematic top view and a cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to an embodiment of the present disclosure. FIG. 9 is a diagram showing a schematic top view and a cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to an embodiment of the present disclosure. FIG. 10 is a schematic cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to an embodiment of the present disclosure. FIG. 11 is a schematic cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to another embodiment of the present disclosure. FIG. 12 is a diagram showing together a schematic top view and a sectional view for explaining an exemplary manufacturing method of a light emitting device according to another embodiment of the present disclosure. FIG. 13 is a schematic cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to another embodiment of the present disclosure. FIG. 14 is a top view showing another example of the cutting line CL of the structure in which the plurality of illuminants 110A are bonded. FIG. 15 is a schematic cross-sectional view of the light emitting device 200A obtained by division along the cutting line CL shown in FIG. FIG. 16 is a top view showing still another example of the cutting line CL of the structure in which the plurality of illuminants 110A are bonded. FIG. 17 is a schematic perspective view of the light emitting device 200B obtained by division along the cutting line CL shown in FIG. FIG. 18 is a schematic cross-sectional view for explaining a modification of the method for manufacturing a light emitting device according to an embodiment of the present disclosure. FIG. 19 is a schematic cross-sectional view of the conductive substrate 101G having the plating layer 101P. FIG. 20 shows an exemplary configuration of a conductive substrate 101H having a groove portion (first groove portion) 101 g and a groove portion (second groove portion) 101h extending in a direction different from the extending direction of the groove portion 101 g. FIG. 21 is a view showing a state in which the light emitting body 110A is fixed to the conductive substrate 101H together with a top view and a cross-sectional view schematically showing a state. FIG. 22 is a schematic cross-sectional view showing an exemplary light emitting device obtained by the manufacturing method according to still another embodiment of the present disclosure. FIG. 23 is a diagram showing together a schematic top view and a sectional view for explaining an exemplary manufacturing method of a light emitting device according to still another embodiment of the present disclosure. FIG. 24 is a diagram showing together a schematic top view and a sectional view for explaining an exemplary manufacturing method of a light emitting device according to still another embodiment of the present disclosure. FIG. 25 is a diagram showing together a schematic top view and a sectional view for explaining an exemplary manufacturing method of a light emitting device according to still another embodiment of the present disclosure. FIG. 26 is a schematic cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to still another embodiment of the present disclosure. FIG. 27 is a diagram showing together a schematic top view and a sectional view for explaining an exemplary manufacturing method of a light emitting device according to still another embodiment of the present disclosure. FIG. 28 is a schematic cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to still another embodiment of the present disclosure. FIG. 29 is a diagram showing together a schematic top view and a sectional view for explaining an exemplary manufacturing method of a light emitting device according to still another embodiment of the present disclosure. FIG. 30 is a schematic cross-sectional view showing an exemplary light emitting device obtained by the manufacturing method according to still another embodiment of the present disclosure. FIG. 31 is a diagram showing together a schematic top view and a sectional view for explaining an exemplary manufacturing method of a light emitting device according to still another embodiment of the present disclosure. FIG. 32 is a schematic cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to still another embodiment of the present disclosure. FIG. 33 is a diagram showing together a schematic top view and a sectional view for explaining an exemplary manufacturing method of a light emitting device according to still another embodiment of the present disclosure. FIG. 34 is a schematic cross-sectional view for explaining an exemplary manufacturing method of a light emitting device according to still another embodiment of the present disclosure.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The following embodiments are examples, and the configuration of the light emitting device and the manufacturing method thereof according to the present disclosure are not limited to the following embodiments. For example, the numerical values, shapes, materials, steps, the order of the steps, and the like shown in the following embodiments are merely examples, and various modifications can be made as long as there is no technical contradiction.

In the following description, terms indicating a specific direction or position (eg, "top", "bottom", "right", "left" and other terms including those terms) may be used. However, these terms use relative orientation or position in the referenced drawings for clarity only. If the relative directions or positional relationships in terms such as "top" and "bottom" in the referenced drawings are the same, the layout is not the same as the referenced drawings in drawings other than the present disclosure, actual products, etc. You may. In the following description, components having substantially the same function are indicated by common reference numerals, and the description may be omitted. In addition, some elements may be omitted in order to avoid overly complicated drawings. The size, positional relationship, etc. of the components shown in the drawings may be exaggerated for the sake of clarity, and the size in the actual light emitting device or the magnitude relationship between the components in the actual light emitting device may be exaggerated. It may not be reflected. In the present disclosure, "parallel" and "vertical" (or "orthogonal") mean that two straight lines, sides, surfaces, etc. are about 0 ° to ± 5 ° and 90 ° to ± 5, respectively, unless otherwise specified. Including the case where it is in the range of about °.

(Outline of manufacturing method of light emitting device)
FIG. 1A is a flowchart showing an outline of a method for manufacturing a light emitting device according to an embodiment of the present disclosure. As shown in FIG. 1A, the method for manufacturing a light emitting device according to an embodiment of the present disclosure is roughly a step of preparing a conductive substrate having a groove on the surface (step S1), a positive electrode on a certain surface side, and a positive electrode. A step of preparing a light emitting body having a negative electrode (step S2a), a step of connecting a positive electrode and a negative electrode to a conductive substrate across a groove (step S3), and a step of forming a resin layer covering the light emitting body on the conductive substrate (step S2a). This includes step S4a) and a step (step S5) of thinning the conductive substrate from the side opposite to the resin layer until the bottom of the groove is removed to form the first electrode and the second electrode separated from each other. .. FIG. 1B is a flowchart showing an outline of a method for manufacturing a light emitting device according to another embodiment of the present disclosure. The manufacturing method illustrated in FIG. 1B includes a step (step S2b) of preparing a light emitting element having a positive electrode and a negative electrode on a certain surface side instead of step S2a shown in FIG. 1A. Further, instead of step S4a, a step (step S4b) of forming a resin layer covering the light emitting element on the conductive substrate is included. As will be described later, the light emitting body is a structure including a light emitting element. As will be clear from the following description, according to the embodiment of the present disclosure, an electrode for supplying power to the light emitting element can be formed on the bottom surface of the light emitting device without requiring, for example, photolithography.

(First example of the structure of the light emitting device and its manufacturing method)
FIG. 2 shows the configuration of an exemplary light emitting device obtained by the manufacturing method according to an embodiment of the present disclosure. The middle part of FIG. 2 is a cross-sectional view taken along the line AA'in the top view of the upper part of FIG. The lower part of FIG. 2 is a bottom view corresponding to these top views and cross-sectional views.

The light emitting device 100A shown in FIG. 2 includes a light emitting body 110A, a first electrode 102, a second electrode 104, joining members 103 and 105, and light reflecting resin portions 106Re and 106Rf. The light emitting body 110A includes a light emitting element 111 having a top surface (first surface) 111a and a bottom surface (second surface) 111b, and a side surface 111s located between the top surface 111a and the bottom surface 111b. The upper surface 111a and the bottom surface 111b of the light emitting element 111 are located on the upper surface 110a side and the bottom surface 110b side of the light emitting body 110A, respectively, and here, the bottom surface 111b of the light emitting element 111 constitutes the bottom surface 110b of the light emitting body 110A. .. As schematically shown in FIG. 2, the light emitting element 111 has an element main body 111m and a positive electrode 112 and a negative electrode 114 provided on the bottom surface 111b side. Therefore, it may be said that the illuminant 110A has a positive electrode 112 and a negative electrode 114 on the bottom surface 110b side thereof. In the configuration illustrated in FIG. 2, the light emitting body 110A further includes a protective layer 118 arranged on the upper surface 111a side of the light emitting element 111, and a wavelength conversion layer 116A sandwiched between the light emitting element 111 and the protective layer 118.

The element body 111m of the light emitting element 111 includes, for example, a translucent substrate and a semiconductor laminated structure on the substrate. The semiconductor laminated structure includes an active layer, an n-type semiconductor layer and a p-type semiconductor layer sandwiching the active layer. As the light emitting element 111, a chip of a known semiconductor light emitting element such as a semiconductor laser or an LED can be used. In the following, an LED chip will be illustrated as the light emitting element 111.

The positive electrode 112 and the negative electrode 114 provided on the bottom surface 111b side opposite to the top surface 111a of the light emitting element 111 are made of, for example, a metal or alloy such as Ag, Al, Au, Cu, Ti, Ni, Pt, Pd, W. It is a single-layer film or a laminated film. The positive electrode 112 and the negative electrode 114 can be formed by, for example, electrolytic plating. The positive electrode 112 is connected to the first electrode 102 by the joining member 103, and the negative electrode 114 is connected to the second electrode 104 by the joining member 105.

The protective layer 118 of the light emitting body 110A is located above the upper surface 111a of the light emitting element 111. The protective layer 118 is a translucent member, for example, a transparent resin layer. The protective layer 118 may be a silicone resin, a silicone-modified resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, a trimethylpentene resin or a polynorbornene resin, or a layer of a resin containing two or more of these resins. The protective layer 118 may be a layer formed of glass.

The wavelength conversion layer 116A is arranged between the protective layer 118 and the light emitting element 111. The wavelength conversion layer 116A is, for example, a layer in which phosphor particles are dispersed in a resin. The wavelength conversion layer 116A absorbs at least a part of the light emitted from the light emitting element 111 and emits light having a wavelength different from the wavelength of the light emitted from the light emitting element 111. The wavelength conversion layer 116A can be formed by using a resin composition in which particles of a phosphor, which is a wavelength conversion substance, are dispersed in a resin material. As the resin material for dispersing the particles of the phosphor, silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, urea resin, phenol resin, acrylic resin, urethane resin or fluororesin, or two or more of these resins. A resin containing the above can be used. A known material can be applied to the phosphor. Examples of phosphors include fluoride-based phosphors such as YAG-based phosphors and KSF-based phosphors, nitride-based phosphors such as CASN, and β-sialone phosphors. The YAG-based phosphor is an example of a wavelength conversion member that converts blue light into yellow light, and the KSF-based phosphor and CASN are examples of wavelength conversion members that convert blue light into red light. Is an example of a wavelength conversion member that converts blue light into green light. The phosphor may be a quantum dot phosphor.

In this example, the outer shape of the light emitting body 110A when viewed from the upper surface 111a side of the light emitting element 111 is rectangular. As shown in the upper part of FIG. 2, the light-reflecting resin portion 106Re covers the four side surfaces of the light-emitting body 110A so as to surround the light-emitting body 110A. As will be described later, the light-reflecting resin portion 106Re is formed of, for example, a resin material in which a light-reflecting filler is dispersed, and reflects the light emitted from the light emitting element 111. The light emitting device 100A emits light from the light emitting element 111 toward the outside from a portion of the upper surface 100a where the protective layer 118 is exposed.

The light-reflecting resin portion 106Rf is located between the first electrode 102 and the second electrode 104 of the light emitting device 100A, as shown in the middle and lower stages of FIG. Like the light-reflective resin part 106Re, the light-reflective resin part 106Rf is also formed of, for example, a resin material in which a light-reflective filler is dispersed. By occupying the space between the first electrode 102 and the second electrode 104 of the light emitting device 100A by the light reflecting resin portion 106Rf, the emission of light from the bottom surface 100b side of the light emitting device 100A is suppressed, and the light utilization efficiency is improved. The effect of is obtained.

As can be seen from the middle part of FIG. 2, the surfaces of the first electrode 102 and the second electrode 104 and the surface of the light-reflecting resin portion 106Rf are aligned, and therefore, the bottom surface 100b of the light emitting device 100A is , Here is a flat surface.

Hereinafter, an exemplary manufacturing method of the light emitting device having the structure shown in FIG. 2 will be described in detail with reference to FIGS. 3 to 10.

First, as shown in FIG. 3, a conductive substrate 101 having a groove portion (first groove portion) 101 g on the surface is prepared (step S1 in FIG. 1A). The conductive substrate 101 can be formed, for example, by preparing a metal plate such as Cu or Al and forming a groove portion 101 g on one main surface of the metal plate. The groove portion 101g may be formed by removing a part of the metal plate by applying etching, scribe, dicing (half cut) or the like. The shape of the conductive substrate 101 when viewed from above is arbitrary. As the shape of the conductive substrate 101, a shape suitable for handling, processing, etc. in the subsequent process can be adopted.

FIG. 3 also shows a schematic top view and a cross-sectional view of an example of the conductive substrate 101 in the upper and lower stages thereof. In the configuration illustrated in FIG. 3, the conductive substrate 101 has a surface 101s on which three groove portions 101g are formed. Here, each of the groove portions 101g extends linearly along the vertical direction of the paper surface in the top view. The number, shape and arrangement of the grooves 101g are not limited to the example shown in FIG. 3, for example, the shape of the grooves 101g may be curved or may include bending and / or branching.

Here, attention is paid to one of the three groove portions 101g in FIG. 3 in the center. By providing the groove portion, the first region R1 and the second region R2 are formed on the left and right sides of the groove portion. Of the conductive substrate 101, the first region R1 and the second region R2 include a first portion 11 and a second portion 12 that are convex with respect to the bottom 101b of the groove portion 101 g, respectively. The width W of the groove 101g does not have to be exactly the same as the distance between the positive electrode 112 and the negative electrode 114. The width W may be about the distance between the positive electrode 112 and the negative electrode 114.

Next, a light emitter having a positive electrode and a negative electrode on the bottom surface side is prepared (step S2a in FIG. 1A). Here, the light emitting body 110A described with reference to FIG. 2 is used.

After preparing the conductive substrate 101 and the light emitting body 110A, the light emitting body 110A is fixed to the conductive substrate 101. At this time, as shown in FIG. 4, the positive electrode 112 and the negative electrode 114 located on the bottom surface 110b of the light emitting body 110A are opposed to the surface 101s of the conductive substrate 101, and the light emitting body 110A is fixed to the conductive substrate 101.

FIG. 5 shows a state after the light emitting body 110A is fixed to the conductive substrate 101. The upper part of FIG. 5 is a top view of the conductive substrate 101 to which the light emitting body 110A is fixed, and the lower part of FIG. 5 is a sectional view taken along line BB'of the top view shown in the upper part of FIG. Unless otherwise specified, other cross-sectional views after the present disclosure also show a vertical cross-sectional view at the same position as the BB'line shown in the upper part of FIG.

As schematically shown in FIG. 5, in the step of fixing the illuminant 110A to the conductive substrate 101, the illuminant 110A is fixed to the conductive substrate 101 so that the illuminant 110A straddles the groove 101 g of the conductive substrate 101. To do. As shown in the lower part of FIG. 5, at this time, the positive electrode 112 and the negative electrode 114 are connected to the conductive substrate 101 across the groove 101 g (step S3 in FIG. 1A). For example, a joining member 103 is provided on the first region R1 of the conductive substrate 101, and the positive electrode 112 and the conductive substrate 101 (for example, the first portion 11) are connected and fixed to each other by the joining member 103. Similarly, the bonding member 105 is provided on the second region R2 of the conductive substrate 101, and the negative electrode 114 and the conductive substrate 101 (for example, the second portion 12) are connected and fixed to each other by the bonding member 105.

The joining members 103 and 105 have a function of electrically connecting the light emitting body 110A and the conductive substrate 101 to each other. For example, solder can be used as the joining members 103 and 105. Examples of materials for the joining members 103 and 105 include Au-containing alloys, Ag-containing alloys, Pd-containing alloys, In-containing alloys, Pb-Pd-containing alloys, Au-Ga-containing alloys, Au-Sn-containing alloys, Sn-containing alloys, and Sn. -Cu-containing alloy, Sn-Cu-Ag-containing alloy, Au-Ge-containing alloy, Au-Si-containing alloy, Al-containing alloy, Cu-In-containing alloy, or a mixture of metal and flux. As the material of the joining members 103 and 105, liquid, paste or solid (sheet, block, powder, wire) members can be used, depending on the composition of the light emitting body, the shape of the substrate, and the like. Appropriate members may be appropriately selected. The joining members 103 and 105 may be composed of a single member, or several types of members may be combined and used as the joining members 103 and 105.

As shown in the upper part of FIG. 5, a plurality of light emitters 110A may be fixed on one conductive substrate 101. In this example, by arranging the plurality of light emitters 110A in the first direction (here, the vertical direction of the paper surface) and the second direction different from the first direction (here, the horizontal direction of the paper surface). The light emitter 110A is fixed on the conductive substrate 101 in a matrix. Of course, the arrangement of the plurality of light emitters 110A on the conductive substrate 101 can be arbitrarily set. However, for any of the light emitting bodies 110A on the conductive substrate 101, the positive electrode 112 and the negative electrode 114 are connected to the conductive substrate 101 across the groove 101 g.

As will be clarified from the steps described later, by arranging a plurality of light emitting bodies on the conductive substrate 101, a plurality of light emitting devices can be efficiently manufactured. In addition, a light emitting device having a plurality of light emitting units can be manufactured relatively easily. As will be described later, in the embodiment of the present disclosure, a resin layer covering the light emitting body (or light emitting element) is formed after the light emitting body (or light emitting element) is connected to the conductive substrate 101. When a plurality of light emitters are arranged on the conductive substrate 101, the pitch between the light emitters is appropriately set according to the viscosity of the material for forming the resin layer, the shape of the light emitter and the groove portion 101 g of the conductive substrate 101, and the like. obtain.

Next, a resin layer covering the light emitting body 110A is formed on the conductive substrate 101 (step S4a in FIG. 1A). Here, the light-reflecting resin layer 106R that covers the light emitting body 110A is formed on the conductive substrate 101. As schematically shown in FIG. 6, the light-reflecting resin layer 106R is formed so as to cover the entire light-emitting body 110A except for the portion in contact with the joining member 103 or 105.

The light-reflecting resin layer 106R is, for example, a resin layer in which a light-reflective filler is dispersed. As the light-reflecting filler, metal particles or particles of an inorganic material or an organic material having a higher refractive index than the resin material in which the light-reflecting filler is dispersed can be used. Examples of light-reflecting fillers are titanium dioxide, silicon dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, murite, niobium oxide, barium sulfate, silicon oxide, and various rare earth oxides (eg, yttrium oxide). , Gadolinium oxide) and the like. Examples of the resin material for dispersing the light-reflecting filler include silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, urea resin, phenol resin, acrylic resin, urethane resin or fluororesin, or these resins. A resin containing two or more kinds can be used. The light-reflecting resin layer 106R is, for example, a layer having a reflectance of 60% or more with respect to light from the light emitting element 111. The reflectance for light from the light emitting element 111 may be 70% or more, 80% or 90% or more, and may be appropriately set.

A compression molding method such as transfer molding can be applied to the formation of the light-reflecting resin layer 106R. The bottom surface of the light emitter 110A is schematically shown in the lower part of FIG. 6 by flowing a material in which a light-reflecting filler is dispersed in an uncured resin while applying heat and pressure inside the mold. The material of the light-reflecting resin layer 106R can also be arranged in the portion sandwiched between the bottom surface 111b of the light emitting element 111 (in this example, the bottom surface 111b) and the bottom surface 101b of the groove 101g. A through hole may be formed in advance in the bottom 101b of the groove portion 101g. By providing a through hole in the bottom 101b of the groove portion 101g, the material of the light-reflecting resin layer 106R can be more reliably flowed to the portion sandwiched between the bottom surface of the light emitting body 110A and the bottom 101b of the groove portion 101g. Here, since the light emitting body 110A is fixed to the conductive substrate 101 by the joining members 103 and 105 (it may be said that the light emitting element 111 is fixed to the conductive substrate 101), the conductive substrate is fixed at the time of compression molding. It is possible to prevent the light emitting body 110A (or the light emitting element 111) from separating from the 101. Further, the displacement of the light emitting body 110A due to the thermal expansion of the conductive substrate 101 is also suppressed. When the compression molding method is applied, an epoxy-based or silicone-based powdery mold compound or the like may be used as the resin composition for forming the light-reflecting resin layer 106R.

Next, the conductive substrate 101 is thinned from the side opposite to the light-reflecting resin layer 106R until the bottom 101b of the groove 101g is removed (step S5 in FIG. 1A). For example, by using a surface grinder to grind the conductive substrate 101 from the side opposite to the surface 101s until the bottom 101b of the groove 101g is removed, the position of the groove 101g is schematically shown in FIG. A part of the light-reflecting resin layer 106R can be exposed from the ground surface Gsb. By removing the bottom 101b of the groove 101g, the conductive substrate 101 is separated into a plurality of conductive pieces 101p at the position of the groove 101g. For example, of the conductive substrate 101, a part of the first portion 11 (see FIG. 6) and the second portion 12 (see FIG. 6) are formed as conductive pieces 101p in a state of being separated from each other after the conductive substrate 101 is thinned. It remains on the light reflective resin layer 106R. Each of the plurality of conductive pieces 101p is in a state of being spatially and electrically separated from other conductive pieces 101p different from itself.

Next, by removing a part of the light-reflecting resin layer 106R, the protective layer 118 located on the upper surface 111a side of the light emitting element 111 is exposed from the light-reflecting resin layer 106R, as schematically shown in FIG. Let me. For removing a part of the light-reflecting resin layer 106R, for example, lapping, grinding using a surface grinder, or the like can be used. At this time, a part of the protective layer 118 may be removed together with a part of the light-reflecting resin layer 106R. As shown in the upper part of FIG. 8, in this example, the protective layer 118 appears in a rectangular shape on the ground surface Gsa. At this time, the vertical distance (height) from the surface 101s to the ground surface Gsa corresponding to the upper surface of the light-reflecting resin layer 106R is, for example, about 200 to 250 μm. The conductive substrate 101 may be thinned after a part of the light-reflecting resin layer 106R is removed.

Next, for example, by dicing with a cutting grindstone (blade), the conductive piece 101p and the light-reflecting resin layer 106R are cut at a position between the light emitting bodies 110A as shown by the thick broken line CL in FIG. By cutting, the structure in which the plurality of light emitters 110A are bonded by the conductive piece 101p and the light reflective resin layer 106R is divided into, for example, a plurality of structures each having the light emitting body 110A. At this time, as shown in FIG. 10, the conductive piece 101p shared among the plurality of illuminants 110A is divided into the positive electrode 112 and the negative electrode 114 of the illuminant 110A. By dividing each of the conductive pieces 101p into portions connected to the positive electrode 112 or the negative electrode 114 of each light emitting body 110A, each structure including one light emitting body 110A was connected to the positive electrode 112 by the joining member 103. The first electrode 102 and the second electrode 104 connected to the negative electrode 114 by the joining member 105 can be formed.

As can be seen from FIG. 10, a light-reflecting resin portion 106Rf is interposed between the first electrode 102 and the second electrode 104, and in the finally obtained structure, the first electrode 102 and the second electrode 104 Are spatially and electrically separated from each other. Further, as is clear from the steps described with reference to FIG. 9, the surfaces of the first electrode 102 and the second electrode 104 constituting the side surface 100s of the light emitting device 100A constitute the side surface 100s of the light emitting device 100A. It is aligned with the surface of the light-reflecting resin portion 106Re. The thickness of the first electrode 102 and the second electrode 104 may be in the range of, for example, about 5 μm or more and 150 μm or less.

Through the above steps, a light emitting device 100A having the structure described with reference to FIG. 2 is obtained. According to the above-mentioned exemplary manufacturing method, an electrode connected to the positive electrode and the negative electrode of the light emitting element, respectively, and having an area larger than that of the positive electrode and the negative electrode is provided on the bottom surface side of the light emitting device without requiring photolithography. It can be formed relatively easily. As described above, according to the embodiment of the present disclosure, it is possible to provide a light emitting device having a power feeding electrode having an area larger than that of the positive electrode and the negative electrode on the bottom surface while avoiding the complexity of the manufacturing process. is there. As the electrode for feeding power, an electrode having a larger area than the positive electrode and the negative electrode of the light emitting body (or light emitting element) is formed, so that the alignment with the wiring board or the like is facilitated. That is, a light emitting device that can be easily mounted on a wiring board or the like is provided. Further, since the positive electrode and the negative electrode of the light emitting body (or light emitting element) in the light emitting device are electrically connected to the electrode having a relatively large area, the effect of improving heat dissipation can also be obtained.

By forming the light-reflecting resin layer 106R as a resin layer covering the light-emitting body 110A fixed to the conductive substrate 101, the light-reflecting resin portion 106Re covering the side surfaces of the light-emitting element 111, the wavelength conversion layer 116A, and the protective layer 118 can be formed. Can be formed. By forming the light-reflecting resin portion 106Re that surrounds the light-emitting element 111, the wavelength conversion layer 116A, and the protective layer 118, the light emitted from, for example, the side surface of the light-emitting element 111 is reflected by the light-reflecting resin portion 106Re to emit light. The light from the element 111 can be reflected toward the upper surface 100a of the light emitting device 100A. That is, the efficiency of light utilization is improved.

Further, by forming the light-reflecting resin layer 106R as the resin layer covering the light emitting body 110A, the light-reflecting resin portion 106Rf covering the portion of the bottom surface 111b of the light emitting element 111 located between the positive electrode 112 and the negative electrode 114 can be formed. It is possible to form. By providing the light-reflecting resin portion 106Rf, the emission of light from the bottom surface 111b side of the light emitting element 111 can be suppressed, and the light utilization efficiency can be further improved.

(Modification example)
A light emitting element 111 is prepared instead of the light emitting body 110A, the light emitting element 111 is fixed to the conductive substrate 101, and then the wavelength conversion layer 116A and the protective layer 118 are arranged or formed on the upper surface 111a of the light emitting element 111. You may. That is, the conductive substrate 101 is prepared in the same manner as in the examples described with reference to FIGS. 3 to 10 (step S1 in FIG. 1B). A light emitting element 111 is prepared (step S2b in FIG. 1B), and as shown in FIG. 11, the light emitting element 111 straddles the groove 101 g of the conductive substrate 101 and does not have the wavelength conversion layer 116A and the protective layer 118. The light emitting element 111 is fixed to the conductive substrate 101. At this time, the positive electrode 112 and the negative electrode 114 are connected to the conductive substrate 101 across the groove 101 g (step S3 in FIG. 1B).

FIG. 12 shows a state after the light emitting element 111 is fixed to the conductive substrate 101. As shown in the figure, joining members 103 and 105 are formed between the conductive substrate 101 and the positive electrode 112 and between the conductive substrate 101 and the negative electrode 114, respectively.

Next, the protective layer 118 is formed on the upper surface 111a side of the light emitting element 111. Here, the wavelength conversion layer 116A and the protective layer 118 are formed on the upper surface 111a of the light emitting element 111.

For example, by arranging the laminated body LB of the wavelength conversion layer 116A and the protective layer 118 on the upper surface 111a of the light emitting element 111 as schematically shown in FIG. 13, the wavelength conversion layer 116A and the protective layer 118 are placed on the upper surface 111a. It is possible to form. The laminated body LB is prepared by preparing a phosphor sheet in which the resin in the resin material in which the phosphor particles are dispersed is in the B stage state and a transparent sheet (for example, a transparent resin sheet), and laminating them. Can be prepared. In the laminated body LB, a slurry containing a resin material such as a phosphor or a silicone resin, inorganic filler particles and a solvent is applied onto one main surface of the protective layer 118 by a coating method such as a spray method, a casting method or a potting method. It can also be formed by curing the applied material. The laminated body LB may be arranged for each light emitting element 111, or a laminated body LB having a size covering the plurality of light emitting elements 111 may be arranged on the plurality of light emitting elements 111. Alternatively, by applying the material of the wavelength conversion layer 116A on the upper surface 111a of the light emitting element 111, stacking the transparent sheets, and then curing the material of the wavelength conversion layer 116A, the wavelength conversion layer is placed on the upper surface 111a of the light emitting element 111. 116A and protective layer 118 may be formed. The state after forming the wavelength conversion layer 116A and the protective layer 118 on the upper surface 111a of the light emitting element 111 is the same as the state shown in FIG.

After forming the protective layer 118, a resin layer covering the light emitting element 111 is formed on the conductive substrate 101 (step S4b in FIG. 1B). For example, the light-reflecting resin layer 106R is formed so as to cover the light emitting element 111 from the outside of the protective layer 118. The state after the formation of the light-reflecting resin layer 106R can be the same as that in FIG. 6, and is not shown. In the present specification, "covering" is interpreted to include not only a mode in which a member to be covered and a member to be covered are in contact with each other, but also a mode in which they are not in direct contact with each other. ..

After that, the same steps as those shown in FIGS. 7 to 10 described above are executed. That is, the conductive substrate 101 is thinned from the side opposite to the light-reflecting resin layer 106R until the bottom 101b of the groove 101g is removed (see steps S5 and 7 in FIG. 1B). Next, by removing a part of the light-reflecting resin layer 106R, the protective layer 118 located on the upper surface 111a side of the light emitting element 111 is exposed from the light-reflecting resin layer 106R (see FIG. 8). Further, the conductive piece 101p and the light-reflecting resin layer 106R are cut at a position between the light emitting elements 111 (see FIG. 9). By cutting, a first electrode 102 connected to the positive electrode 112 by the joining member 103 and a second electrode 104 connected to the negative electrode 114 by the joining member 105 are formed for each structure including one light emitting element 111. ..

The light emitting device 100A having the structure described with reference to FIG. 2 can also be obtained by the above steps. As in this example, by forming the wavelength conversion layer 116A and / or the protective layer 118 after fixing the light emitting element 111 to the conductive substrate 101, a structure having the wavelength conversion layer 116A and / or the protective layer 118 (for example, light emission). Compared with the case where the body 110A) is fixed to the conductive substrate 101, damage to the layer on the upper surface 111a due to heating at the time of joining with the conductive substrate 101 can be reduced.

In the example described with reference to FIGS. 9 and 10, the structure in which the plurality of illuminants 110A are bonded is cut into a plurality of units each having the illuminant 110A. However, the unit of division of the structure is not limited to this example. The structure may be divided into units, each containing a plurality of light emitters 110A.

FIG. 14 shows another example of the cutting line CL of the structure in which the plurality of illuminants 110A are bonded. In the example shown in FIG. 14, the cutting line CL is set for each light emitter 110A in the first direction (here, the vertical direction of the paper surface) in which the portion where the conductive piece 101p is not located (the portion where the groove portion 101g is located) extends. It is set. On the other hand, with respect to the second direction (here, the left-right direction of the paper surface), a cutting line CL is set for each of the two light emitters 110A. According to such a setting of the cutting line CL, as shown in FIG. 15, each of them can efficiently provide a plurality of light emitting devices 200A including two light emitting bodies 110A connected in series.

The light emitting device 200A shown in FIG. 15 has two light emitting units LE on its upper surface 200a corresponding to the inclusion of two light emitting bodies 110A. In the configuration illustrated in FIG. 15, the negative electrode 114 of the light emitting body 110A on the left side and the positive electrode 112 of the light emitting body 110A on the right side are connected to the common electrode 101q via the joining members 105 and 103, respectively. When the light emitting device 200A is mounted on a wiring substrate, for example, between the first electrode 102 connected to the positive electrode 112 of the light emitting body 110A on the left side and the second electrode 104 connected to the negative electrode 114 of the light emitting body 110A on the right side. The light emitting device 200A is connected to the wiring pattern on the wiring board so that a predetermined current is supplied.

FIG. 16 shows yet another example of the cutting line CL of the structure in which the plurality of illuminants 110A are bonded. In the example shown in FIG. 16, a cutting line CL is set for each of the two illuminants 110A in the first direction (here, the vertical direction of the paper surface), and in the second direction (here, the horizontal direction of the paper surface). , A cutting line CL is set for each illuminant 110A. According to such a setting of the cutting line CL, as shown in FIG. 17, a plurality of light emitting devices 200B each including two light emitting bodies 110A connected in parallel can be obtained. The first electrode 102 and the second electrode 104 of the light emitting device 200B are shared between the two light emitting bodies 110A. That is, in this example, the positive electrodes 112 of the two light emitters 110A are connected to the single first electrode 102 via the bonding member 103, and the negative electrodes 114 are connected to the single second electrode 102 via the bonding member 105. It is connected to 104.

As described above, according to the embodiment of the present disclosure, it is relatively easy to provide a light emitting device including a plurality of light emitting bodies (or light emitting elements) connected in series or in parallel. Of course, the number of light emitters included in the light emitting device can be arbitrarily set.

A conductive substrate may be formed by using a metal plate having a plating layer on the surface. By forming the plating layer, the wettability of the conductive substrate with respect to the conductive material such as solder can be improved, and the light emitting body 110A (or the light emitting element 111) can be more easily arranged on the conductive substrate.

For example, as schematically shown in FIG. 18, first, the surface of the metal plate 101M is plated to form, for example, an Au film 101f. Then, as schematically shown in FIG. 19, a part of the Au film 101f and the metal plate 101M is removed by etching or the like to form a groove portion 101g. As a result, the conductive substrate 101G having the plating layer 101P can be obtained.

At this time, a plurality of second grooves may be further formed in the metal plate 101M by removing a part of the metal plate 101M together with the plating layer 101P. FIG. 20 shows an exemplary configuration of a conductive substrate 101H further having a groove portion (first groove portion) 101g and a groove portion (second groove portion) 101h extending in a direction different from the extending direction of the groove portion 101g. In the configuration illustrated in FIG. 20, the plurality of groove portions 101h extend in a direction orthogonal to the first direction in which the plurality of groove portions 101g extend (here, the vertical direction of the paper surface). By providing the groove portion 101g and the groove portion 101h, a grid-like groove portion is formed on the conductive substrate 101H. Further, as a result of forming the groove 101h extending in a direction different from that of the groove 101g, the first island-shaped portion 107 and the second island-shaped portion 109 separated from each other by the groove portion 101g are formed on the left and right sides of the groove portion 101g. ..

FIG. 21 shows a state in which the light emitting body 110A is fixed to the conductive substrate 101H. As schematically shown in FIG. 21, in fixing the light emitting body 110A to the conductive substrate 101H, the light emitting body 110A straddles the groove 101g, and the positive electrode 112 and the negative electrode 114 are respectively the first island of the metal plate 101M. It connects to the shaped portion 107 and the second island-shaped portion 109. When the light emitting element 111 is first fixed to the conductive substrate 101H instead of the light emitting body 110A, the positive electrode 112 and the negative electrode 114 are respectively formed on the first island-shaped portion of the metal plate 101M so that the light emitting element 111 straddles the groove portion 101g. It may be connected to 107 and the second island-shaped portion 109.

As shown in the lower part of FIG. 21, in this example, the plating layer 101P is located on the first island-shaped portion 107 and the second island-shaped portion 109 of the metal plate 101M, and is a region on the groove portion 101g. The plating (here, Au film) is removed from the region on the groove 101h that does not appear in the lower part of FIG. 21. The portion of the conductive substrate 101H on which the plating is formed has high wettability to the solder, and therefore the joining members 103 and 105 can be arranged more reliably. On the other hand, when a Cu plate is used as the metal plate 101M and the groove portions 101g and 101h are formed, the plating is removed, and as a result, the groove portions 101g and 101h are easily oxidized, and the wettability of the solder in the groove portions 101g and 101h becomes poor. descend. In other words, it becomes difficult for the joining members 103 and 105 to be arranged in the grooves 101g and 101h, and it is possible to prevent the positive electrode 112 or the negative electrode 114 from being joined to the conductive substrate 101H at the groove 101g or 101h.

By providing the groove portions 101g and 101h in this way, plating can be selectively left on the first island-shaped portion 107 and on the second island-shaped portion 109. By providing a region in which the positive electrode 112 and the negative electrode 114 should be connected, where the wettability with respect to a conductive material such as solder is selectively improved, the misalignment of the light emitting body (or light emitting element) is suppressed. , The light emitting body (or light emitting element) can be more reliably bonded to the desired region of the conductive substrate. That is, it is possible to reduce the alignment deviation when the light emitting body (or light emitting element) is fixed to the conductive substrate. The order of forming the plating layer 101P, forming the groove 101g, and forming the groove 101h is not limited to the above example, and can be arbitrarily changed. For example, the plating layer 101P may be formed after the groove portion 101h is formed. Further, the number, shape and arrangement of the groove portions 101h may be arbitrarily set in the same manner as in the groove portion 101g.

(Second example of the structure of the light emitting device and its manufacturing method)
FIG. 22 schematically shows a cross section of an exemplary light emitting device obtained by the manufacturing method according to another embodiment of the present disclosure. The light emitting device 100B shown in FIG. 22 includes a light emitting body 110B, a first electrode 102, a second electrode 104, joining members 103 and 105, a transparent resin portion 106Ce, and a light reflecting resin portion 106Rf. The light emitting body 110B includes a light emitting element 111, similarly to the light emitting body 110A described with reference to FIG. Also in this example, the bottom surface 110b of the light emitting body 110B coincides with the bottom surface 111b of the light emitting element 111.

The main difference between the light emitting body 110B in the light emitting device 100B and the light emitting body 110A described with reference to FIG. 2 is that the light emitting body 110B does not include the protective layer 118 and has a flat wavelength. Instead of the conversion layer 116A, the wavelength conversion layer 116B covering the upper surface 111a and the side surface 111s of the light emitting element 111 is provided. The wavelength conversion layer 116B can be formed in the same manner as the wavelength conversion layer 116A by using, for example, the same material as the material for forming the wavelength conversion layer 116A.

In the configuration illustrated in FIG. 22, the transparent resin portion 106C covers the portion of the light emitting body 110B other than the portion in contact with the joining members 103 and 105. A part of the transparent resin portion 106Ce is located on the bottom surface 111b side of the light emitting element 111 and is also located between the positive electrode 112 and the negative electrode 114. However, as shown in FIG. 22, the space between the first electrode 102 and the second electrode 104 is filled with the light-reflecting resin portion 106Rf. By locating the first electrode 102, the second electrode 104, and the light-reflecting resin portion 106Rf on the bottom surface 100b side of the light emitting device 100B, the emission of light from the bottom surface 100b side of the light emitting device 100B is suppressed. According to such a configuration, light can be taken out from the upper surface 100a and the side surface 100s of the light emitting device 100B. Further, the transparent resin portion 106Ce can function as a protective layer of the wavelength conversion layer 116B.

Hereinafter, an exemplary manufacturing method of the light emitting device 100B will be described in detail with reference to the drawings.

First, a conductive substrate having a groove on the surface is prepared. Here, an example using the same conductive substrate 101 as the example described with reference to FIGS. 3 to 10 will be described, but the conductive substrate having the plating layer 101P as described with reference to FIGS. 18 to 20 will be described. You may use 101H.

Here, as schematically shown in FIG. 23, the resin portion 106Rg that fills the groove portion 101g is formed by filling the inside of the groove portion 101g of the conductive substrate 101 with a resin material. As the material of the resin portion 106Rg, the same material as the material of the light-reflecting resin portion 106Rf described above, for example, a resin material in which a light-reflecting filler is dispersed can be used. The surface of the resin portion 106Rg is matched with, for example, the surface 101s of the conductive substrate 101.

Next, the light emitting body 110B is prepared, and the light emitting body 110B is fixed to the conductive substrate 101. At this time, as shown in FIG. 24, the positive electrode 112 and the negative electrode 114 on the bottom surface 110b side of the illuminant 110B are connected to the conductive substrate 101 across the groove 101g. For example, a joining member 103 is provided on the first region R1 of the conductive substrate 101, and the positive electrode 112 and the conductive substrate 101 are connected and fixed to each other by the joining member 103. Further, a joining member 105 is provided on the second region R2 of the conductive substrate 101, and the negative electrode 114 and the conductive substrate 101 (for example, the second portion 12) are connected and fixed to each other by the joining member 105. An arbitrary number of light emitters 110B may be arranged on the conductive substrate 101.

Next, a resin layer covering the light emitting body 110B is formed on the conductive substrate 101. Here, the transparent resin layer 106C covering the light emitting body 110B is formed on the conductive substrate 101. As the material of the transparent resin layer 106C, the same material as the material of the protective layer 118 of the light emitter 110A described above can be used. As schematically shown in FIG. 25, the transparent resin layer 106C is formed so as to cover the entire light emitting body 110B except for the portion in contact with the joining member 103 or 105. The transparent resin layer 106C can be formed by applying a compression molding method such as transfer molding, as in the case of the light-reflecting resin layer 106R described above. The material of the transparent resin layer 106C may also be arranged in a portion sandwiched between the bottom surface of the light emitting body 110B and the surface of the resin portion 106Rg filled in the groove portion 101g. In this example, the bottom surface of the light emitting body 110B is shared with the bottom surface 111b of the light emitting element 111.

Next, using a surface grinder or the like, the conductive substrate 101 is thinned from the side opposite to the transparent resin layer 106C until the bottom 101b of the groove 101g is removed. By thinning, as schematically shown in FIG. 26, a part of the resin portion 106Rg can be exposed from the ground surface Gsb at the position of the groove portion 101g. By removing the bottom 101b of the groove 101g, the conductive substrate 101 is separated into a plurality of conductive pieces 101p at the position of the groove 101g.

Next, for example, by dicing, the conductive piece 101p and the transparent resin layer 106C are cut at a position between the light emitting bodies 110B as shown by the thick broken line CL in FIG. 27. As described above, the position and number of the cutting lines CL may be appropriately set according to the design of the light emitting device to be finally obtained. By cutting, the conductive piece 101p shared among the plurality of illuminants 110B is divided into each of the positive electrode 112 and the negative electrode 114 of each illuminant 110B. Further, the transparent resin layer 106C and the resin portion 106Rg are separated into a plurality of portions by cutting, and the transparent resin portion 106Ce and the light-reflecting resin portion 106Rf are formed as schematically shown in FIG. 28. In this way, the first electrode 102 and the second electrode 104 of the light emitting device 100B finally obtained by filling the groove 101 g of the conductive substrate 101 with the light reflective resin and then arranging the light emitting body 110B on the conductive substrate 101. A light-reflecting resin portion 106Rf can be formed between the two. By forming the light-reflecting resin portion 106Rf between the first electrode 102 and the second electrode 104, the emission of light from between the first electrode 102 and the second electrode 104 is suppressed.

The light emitting device 100B is obtained through the above steps. According to the second example described with reference to FIGS. 22 to 28, light having a wavelength different from the wavelength of the light from the light emitting element 111 can be extracted from the upper surface 100a and the side surface 100s, and the wiring board. It is possible to provide a light emitting device 100B that can be easily mounted on the or the like.

In the same manner as in the examples described with reference to FIGS. 11 to 13, the light emitting element 111 may be first fixed to the conductive substrate 101 instead of the light emitting body 110B. For example, the conductive substrate 101 and the light emitting element 111 are prepared. Next, as described with reference to FIG. 23, the inside of the groove 101 g of the conductive substrate 101 is filled with a resin material to form a resin portion 106 Rg that fills the groove 101 g.

Next, as shown in FIG. 29, the positive electrode 112 and the negative electrode 114 of the light emitting element 111 are connected to the conductive substrate 101 so that the light emitting element 111 straddles the groove 101 g of the conductive substrate 101. After that, the wavelength conversion layer 116B covering the upper surface 111a and the side surface 111s of the light emitting element 111 is formed. Since the state after forming the wavelength conversion layer 116B is the same as the state shown in FIG. 24, the illustration is omitted here.

The wavelength conversion layer 116B can be formed, for example, by applying an uncured resin composition in which phosphor particles are dispersed in a resin material to the upper surface 111a and the side surface 111s of the light emitting element 111 and curing the resin composition. .. The lower end of the wavelength conversion layer 116B may extend to a position lower than the bottom surface 111b of the light emitting element 111.

After forming the wavelength conversion layer 116B, a resin layer covering the light emitting element 111 is formed on the conductive substrate 101. Here, the transparent resin layer 106C is formed so as to cover the light emitting element 111 from the outside of the wavelength conversion layer 116B. The state after the formation of the transparent resin layer 106C may be the same as that shown in FIG. 25, and thus the illustration is omitted.

Then, by executing the same steps as those shown in FIGS. 26 to 28 described above, the light emitting device 100B having the structure described with reference to FIG. 22 can be obtained. That is, the conductive substrate 101 is thinned from the side opposite to the transparent resin layer 106C until the bottom 101b of the groove 101g is removed (see FIG. 26). Next, the conductive piece 101p and the transparent resin layer 106C are cut at a position between the light emitting elements 111 (see FIG. 27). By cutting, a first electrode 102 and a second electrode 104 are formed for each structure including one light emitting element 111 (see FIG. 28).

(Third example of the structure of the light emitting device and its manufacturing method)
FIG. 30 schematically shows a cross section of an exemplary light emitting device obtained by the manufacturing method according to still another embodiment of the present disclosure. The light emitting device 100C shown in FIG. 30 includes a light emitting element 111, a first electrode 102, a second electrode 104, joining members 103 and 105, a wavelength conversion unit 106Pe, and a light reflecting resin unit 106Rf.

In the configuration illustrated in FIG. 30, the wavelength conversion unit 106Pe covers a portion of the light emitting element 111 other than the portion in contact with the joining members 103 and 105. A part of the wavelength conversion unit 106Pe is located on the bottom surface 111b side of the light emitting element 111 and also between the positive electrode 112 and the negative electrode 114. In the light emitting device 100C as well, similarly to the above-mentioned light emitting device 100B, the space between the first electrode 102 and the second electrode 104 is filled with the light reflecting resin portion 106Rf.

The wavelength conversion unit 106Pe is formed of, for example, a material containing a resin and a wavelength conversion member dispersed in the resin, absorbs a part of the light emitted from the light emitting element 111, and receives the light emitted from the light emitting element 111. It emits light with a wavelength different from that of the wavelength. Light can be taken out from the light emitting device 100C from the upper surface 100a and the side surface 100s in the same manner as the above-mentioned light emitting device 100B.

Hereinafter, an exemplary manufacturing method of the light emitting device 100C will be described in detail with reference to the drawings.

First, a conductive substrate having a groove on the surface is prepared. Here, as in the example described with reference to FIGS. 22 to 28, the conductive substrate 101 is prepared, and the inside of the groove 101 g is filled with a resin material to form a resin portion 106 Rg that fills the groove 101 g. To do.

Next, the light emitting element 111 is prepared, and the light emitting element 111 is fixed to the conductive substrate 101. At this time, the positive electrode 112 and the negative electrode 114 are connected to the conductive substrate 101 across the groove 101 g. An arbitrary number of light emitting elements 111 can be arranged on the conductive substrate 101. The state after arranging the light emitting element 111 on the conductive substrate 101 is the same as the state shown in FIG. 29.

Next, a resin layer covering the light emitting element 111 is formed on the conductive substrate 101. Here, the wavelength conversion layer 106P that covers the light emitting element 111 is formed on the conductive substrate 101. As the material of the wavelength conversion layer 106P, for example, a material for forming the wavelength conversion layer 116A or a material similar to the material for forming the wavelength conversion layer 116B can be used. In other words, for example, a material containing a resin and a wavelength conversion member (for example, a phosphor) dispersed in the resin can be used. Further, the wavelength conversion layer 106P can be formed by a compression molding method such as transfer molding, as in the case of the light-reflecting resin layer 106R or the transparent resin layer 106C described above. As schematically shown in FIG. 31, the wavelength conversion layer 106P is formed so as to cover the entire light emitting element 111 except for the portion in contact with the bonding member 103 or 105.

Next, using a surface grinder or the like, the conductive substrate 101 is thinned from the side opposite to the wavelength conversion layer 106P until the bottom 101b of the groove 101g is removed. By thinning, as schematically shown in FIG. 32, a part of the resin portion 106Rg can be exposed from the ground surface Gsb at the position of the groove portion 101g. By removing the bottom 101b of the groove 101g, the conductive substrate 101 is separated into a plurality of conductive pieces 101p at the position of the groove 101g.

Next, for example, by dicing, the conductive piece 101p and the wavelength conversion layer 106P are cut at a position between the light emitting elements 111 as shown by the thick broken line CL in FIG. By cutting, as schematically shown in FIG. 34, the conductive piece 101p shared among the plurality of light emitting elements 111 is divided into the positive electrode 112 and the negative electrode 114 of each light emitting element 111, and the wavelength conversion unit 106Pe is also divided. And the light-reflecting resin portion 106Rf is formed.

The light emitting device 100C is obtained through the above steps. According to the third example described with reference to FIGS. 30 to 34, a wavelength different from the wavelength of the light from the light emitting element 111 is set as in the second example described with reference to FIGS. 22 to 28. A light emitting device 100C capable of extracting the light having the light from the upper surface 100a and the side surface 100s can be provided.

The embodiments of the present disclosure are useful for providing various lighting light sources, vehicle-mounted light sources, backlight light sources, and the like.

100A-100C Light emitting device 101, 101G, 101H Conductive substrate 101M Metal plate 101P Plating layer 101g Groove (first groove)
101h groove (second groove)
102 First electrode 104 Second electrode 103, 105 Joining member 106C Transparent resin layer 106P Wavelength conversion layer 106R Light-reflecting resin layer 107 First island-shaped part 109 Second island-shaped part 110A, 100B Luminescent body 111 Light emitting element 112 Positive electrode 114 Negative electrode 116A, 116B Wavelength conversion layer 118 Protective layer 200A, 200B Light emitting device

Claims (7)

The step (A) of preparing a conductive substrate having the first groove on the surface, and
A light emitting element having a first surface and a second surface located on the side opposite to the first surface, a positive electrode and a negative electrode on the second surface side, and a translucent member located on the first surface side. Step (B) of preparing a plurality of light emitters comprising
A step (C) of connecting the positive electrode and the negative electrode of each of the plurality of light emitting elements to the conductive substrate across the first groove portion.
A step (D) of forming a resin layer on the conductive substrate that continuously covers the plurality of light emitters and fills the inside of the first groove portion.
From the side opposite to the resin layer, the conductive substrate was thinned until the bottom of the first groove was removed, and the first electrode connected to the positive electrode of each of the light emitters and the first electrode separated from each other and said. Step (E) of forming the second electrode connected to the negative electrode
A step (I) of cutting the resin layer and the thinned conductive substrate between each of the plurality of light emitters to obtain a light emitting device in which each is individualized.
A method of manufacturing a light emitting device, including. The step (A) of preparing a conductive substrate having the first groove on the surface, and
A step (B) of preparing a plurality of light emitting elements having a first surface and a second surface located on the side opposite to the first surface and having a positive electrode and a negative electrode on the second surface side.
A step (C) of connecting the positive electrode and the negative electrode to the conductive substrate across the first groove portion.
A step (D) of forming a resin layer on the conductive substrate that continuously covers the plurality of light emitting elements and fills the inside of the first groove portion.
From the side opposite to the resin layer, the conductive substrate was thinned until the bottom of the first groove was removed, and was connected to the first electrode connected to the positive electrode and the negative electrode separated from each other. Step (E) of forming the second electrode
A step (I) of cutting the resin layer and the thinned conductive substrate between each of the plurality of light emitting elements to obtain a light emitting device in which each is individualized.
A method of manufacturing a light emitting device, including. Between the step (C) and the step (D), a step (G) of forming a translucent member on the first surface side of the light emitting element and a step (G).
2. The method for manufacturing a light emitting device according to claim 2. The resin layer is a light-reflecting resin layer.
A step (F) of exposing the translucent member from the light-reflecting resin layer by removing a part of the light-reflecting resin layer after the step (D).
The method for manufacturing a light emitting device according to claim 1 or 3, further comprising. The translucent member has a wavelength conversion layer and a protective layer.
The method for manufacturing a light emitting device according to any one of claims 1, 3 and 4, wherein the wavelength conversion layer is sandwiched between the light emitting element and the protective layer. The first groove extends in the first direction and
The method for manufacturing a light emitting device according to any one of claims 1 to 5, wherein in the step (D), the plurality of the light emitting elements are arranged side by side in the first direction and connected to the conductive substrate. The method for manufacturing a light emitting device according to any one of claims 1 to 6, wherein the conductive substrate has a through hole on the bottom surface of the first groove.

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