JP2019071470A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
JP2019071470A
JP2019071470A JP2019004017A JP2019004017A JP2019071470A JP 2019071470 A JP2019071470 A JP 2019071470A JP 2019004017 A JP2019004017 A JP 2019004017A JP 2019004017 A JP2019004017 A JP 2019004017A JP 2019071470 A JP2019071470 A JP 2019071470A
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Prior art keywords
light emitting
emitting device
light
conductive member
emitting element
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JP2019004017A
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JP6766900B2 (en
Inventor
高宏 谷
Takahiro Tani
高宏 谷
敏昭 森脇
Toshiaki Moriwaki
敏昭 森脇
広樹 由宇
hiroki Yu
広樹 由宇
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Abstract

To provide a method for easily or highly accurately manufacturing a small side-view type light-emitting device.SOLUTION: A light-emitting device having a light emission surface, a back surface located at a side opposite to the light emission surface, and a mounting surface located between the light emission surface and the back surface, includes: a light-emitting element which has a first main surface located at a light emission surface side, a second main surface located at a side opposite to the first main surface, and a side surface between the first main surface and the second main surface and which also has a first electrode and a second electrode on the main surface; a light shielding member which coats the side surface of the light-emitting element and does not coat the first main surface of the light-emitting element; a first terminal coating film which is connected to the first electrode of the light-emitting element and is placed across the back surface and the mounting surface; a second terminal coating film which is connected to the second electrode of the light-emitting element and is placed across the back surface and the mounting surface; a first conductive member which is in contact with both the first electrode and the first coating member; and a second conductive member which is in contact with both the second electrode and the second coating member.SELECTED DRAWING: Figure 1

Description

本発明は、発光装置に関する。   The present invention relates to a light emitting device.

従来から、液晶テレビ用バックライトや照明器具などの光源として、発光素子を備える
発光装置が広く用いられている。そして、その使用形態に応じて、種々のパッケージ形態
を有するもの、特に、小型で薄型のサイドビュー型の発光装置が提案されている(例えば
、特許文献1,2)。
そして、このように、小型、薄型であっても、強固に実装基板に固定することができる
発光装置を、容易又は高精度に製造する方法の確立が求められている。
2. Description of the Related Art Conventionally, a light emitting device provided with a light emitting element has been widely used as a light source for a backlight for liquid crystal television, a lighting fixture, and the like. And according to the use form, what has various package forms, especially the small and thin side view type light-emitting device is proposed (for example, patent documents 1, 2).
Thus, there is a need to establish a method for easily or accurately manufacturing a light emitting device that can be firmly fixed to a mounting substrate even if it is small and thin.

特開2015−8820号公報JP, 2015-8820, A 特開2012−146898号公報JP, 2012-146898, A

本発明の実施形態は、小型のサイドビュー型の発光装置を提供することを目的とする。   Embodiments of the present invention aim to provide a compact side-view type light emitting device.

本発明の実施形態に係る発光装置は、光出射面と、前記光出射面の反対側に位置する背面と、前記光出射面と前記背面との間に位置する実装面とを有する発光装置において、前記光出射面側に位置し主発光面となる第1主面と、前記第1主面の反対側に位置する第2主面と、前記第1主面と前記第2主面の間にある側面とを有し、前記第2主面に第1電極および第2電極を有する発光素子と、前記発光素子の側面を被覆し、前記発光素子の前記第1主面を被覆しない遮光部材と、前記発光素子の前記第1電極と接続し、前記背面および前記実装面に渡って配置される第1端子被覆膜と、前記発光素子の前記第2電極と接続し、前記背面および前記実装面に渡って配置される第2端子被覆膜と、前記第1電極および前記第1被覆部材の双方と接する第1導電部材と、前記第2電極および前記第2被覆部材の双方と接する第2導電部材と、を備える発光装置。   A light emitting device according to an embodiment of the present invention comprises a light emitting surface, a back surface located opposite to the light emitting surface, and a mounting surface located between the light emitting surface and the back surface. A first main surface located on the light emitting surface side and serving as a main light emitting surface, a second main surface located opposite the first main surface, and between the first main surface and the second main surface A light emitting device having a light emitting element having a first electrode and a second electrode on the second main surface, and a light shielding member covering the side surface of the light emitting element and not covering the first main surface of the light emitting device A first terminal covering film connected to the first electrode of the light emitting element and disposed across the back surface and the mounting surface; and a second electrode of the light emitting element; A second terminal covering film disposed across the mounting surface, and in contact with both the first electrode and the first covering member That the light-emitting device comprising a first conductive member, and a second conductive member in contact with both the second electrode and the second cover member.

本発明の実施形態に係る発光装置によれば、小型のサイドビュー型の発光装置を、容易又は高精度に製造することができる。   According to the light emitting device according to the embodiment of the present invention, a compact side view light emitting device can be easily or accurately manufactured.

図1Aは、実施形態1の発光装置の製造方法に係る、発光素子を基体上に配置する工程を示す概略平面図である。図1Bは、図1AのX−X’線における概略断面図である。図1Cは、実施形態1の発光装置の製造方法に係る、導電部材を形成する工程を示す概略平面図である。図1Dは、図1CのX−X’線における概略断面図である。図1E及び図1Fは、実施形態1の発光装置の製造方法に係る、遮光部材を形成する工程を示す概略断面図である。図1G及び図1Hは、実施形態1の発光装置の製造方法に係る、導電部材を切断する工程を示す概略断面図である。図1Iは、実施形態1に係る発光装置を実装基板に実装した発光モジュールを発光面側から見た概略正面図である。図1Jは、実施形態1に係る発光装置の概略断面図である。FIG. 1A is a schematic plan view showing a step of arranging a light emitting element on a base according to a method of manufacturing a light emitting device of Embodiment 1. FIG. FIG. 1B is a schematic cross-sectional view taken along line X-X 'of FIG. 1A. FIG. 1C is a schematic plan view showing a step of forming a conductive member according to the method of manufacturing a light emitting device of Embodiment 1. 1D is a schematic cross-sectional view taken along line X-X 'of FIG. 1C. 1E and 1F are schematic cross-sectional views showing steps of forming a light shielding member according to the method of manufacturing a light emitting device of Embodiment 1. FIG. 1G and 1H are schematic cross-sectional views showing steps of cutting a conductive member according to the method of manufacturing a light emitting device of Embodiment 1. FIG. FIG. 1I is a schematic front view of a light emitting module in which the light emitting device according to the first embodiment is mounted on a mounting substrate as viewed from a light emitting surface side. FIG. 1J is a schematic cross-sectional view of the light emitting device according to the first embodiment. 図2Aは、実施形態2の発光装置の製造方法に係る、発光素子を基体上に配置する工程を示す概略断面図である。図2Bは、実施形態2の発光装置の製造方法に係る、遮光部材を形成する工程を示す概略平面図である。図2Cは、図2BのX−X’線における概略断面図である。図2Dは、実施形態2の発光装置の製造方法に係る、導電部材を形成する工程を示す概略断面図である。図2E及び図2Fは、実施形態2の発光装置の製造方法に係る、導電部材を切断する工程を示す概略断面図である。FIG. 2A is a schematic cross-sectional view showing a step of arranging a light emitting element on a base according to a method of manufacturing a light emitting device of Embodiment 2. FIG. 2B is a schematic plan view showing a step of forming a light shielding member according to the method of manufacturing a light emitting device of Embodiment 2. FIG. 2C is a schematic cross-sectional view taken along line X-X 'of FIG. 2B. FIG. 2D is a schematic cross-sectional view showing the step of forming a conductive member according to the method of manufacturing a light emitting device of Embodiment 2. 2E and 2F are schematic cross-sectional views showing steps of cutting a conductive member according to the method of manufacturing a light emitting device of Embodiment 2. FIG. 図3A〜図3Dは、実施形態3の発光装置の製造方法に係る、遮光部材の凹部を形成する工程を示す概略断面図である。図3Eは、実施形態3の発光装置の製造方法に係る、導電部材を形成する工程を示す概略断面図である。図3Fは、実施形態3の発光装置の製造方法に係る、導電部材を切断する工程を示す概略断面図である。3A to 3D are schematic cross-sectional views showing the process of forming the recess of the light shielding member according to the method of manufacturing the light emitting device of the third embodiment. FIG. 3E is a schematic cross-sectional view showing the step of forming a conductive member according to the method of manufacturing a light emitting device of Embodiment 3. FIG. 3F is a schematic cross-sectional view showing a step of cutting a conductive member according to the method of manufacturing a light emitting device of Embodiment 3. 図4A及び図4Bは、実施形態4の発光装置の製造方法に係る、第1の遮光部材を形成する工程を示す概略断面図である。図4Cは、実施形態4の発光装置の製造方法に係る導電部材を形成する工程を示す概略断面図である。図4D及び図4Eは、実施形態4の発光装置の製造方法に係る、第2の遮光部材を形成する工程を示す概略断面図である。図4F及び図4Gは、実施形態4の発光装置の製造方法に係る、導電部材を切断する工程を示す概略断面図である。4A and 4B are schematic cross-sectional views showing steps of forming a first light shielding member according to the method of manufacturing a light emitting device of the fourth embodiment. FIG. 4C is a schematic cross-sectional view showing the step of forming a conductive member according to the method of manufacturing a light emitting device of Embodiment 4. 4D and 4E are schematic cross-sectional views showing steps of forming a second light shielding member according to the method of manufacturing a light emitting device of the fourth embodiment. 4F and 4G are schematic cross-sectional views showing steps of cutting a conductive member according to the method of manufacturing a light emitting device of the fourth embodiment. 図5は、図4Cの概略平面図である。FIG. 5 is a schematic plan view of FIG. 4C. 図6A及び図6Bは、実施形態5の発光装置の製造方法に係る、導電部材を形成する工程を示す概略平面図である。6A and 6B are schematic plan views showing steps of forming a conductive member according to the method of manufacturing a light emitting device of the fifth embodiment.

以下、本発明の実施形態について適宜図面を参照して説明する。ただし、以下に説明す
る発光装置及びその製造方法は、実施形態の技術的思想を具現化するためのものであって
、以下に限定するものではない。特に、構成部品の寸法、材質、形状、その相対的配置等
は、本発明の技術的範囲を限定するものではなく、単なる説明例であり、説明を明確にす
るために誇張していることがある。以下に記載される実施形態は、各構成等を適宜組み合
わせて適用できる。
Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the light emitting device and the manufacturing method thereof to be described below are for embodying the technical idea of the embodiment, and are not limited to the following. In particular, the dimensions, materials, shapes, relative positions, etc. of the component parts do not limit the technical scope of the present invention, and are merely illustrative examples, and are exaggerated to clarify the explanation. is there. The embodiments described below can be applied by appropriately combining each configuration and the like.

<実施形態1>
図1Aは、実施形態1の発光装置の製造方法に係る、発光素子を基体上に配置する工程
を示す概略平面図である。図1Bは、図1AのX−X’線における概略断面図である。図
1Cは、実施形態1の発光装置の製造方法に係る、導電部材を形成する工程を示す概略平
面図である。図1Dは、図1CのX−X’線における概略断面図である。図1E及び図1
Fは、実施形態1の発光装置の製造方法に係る、遮光部材を形成する工程を示す概略断面
図である。図1G及び図1Hは、実施形態1の発光装置の製造方法に係る、導電部材を切
断する工程を示す概略断面図である。図1Iは、実施形態1に係る発光装置を実装基板に
実装した発光モジュールを発光面側から見た概略正面図である。図1Jは、実施形態1に
係る発光装置の概略断面図である。実施形態1では、少なくとも以下の工程を行うことで
、各々の発光装置10を形成する。
まず、図1A及び図1Bに示されるように、2つの発光素子2は、主発光面Mと、主発
光面Mと反対側の面であって一対の電極2a、2bを有する面と、を備えており、電極2
a、2bを上向きにして隣接するように基体1上に配置する。
そして、図1C及び図1Dに示されるように、一方の発光素子2の電極2a、2bから
他方の発光素子2の電極2a、2bにわたる一対の導電部材3(3a、3b)を形成する
。言い換えると、一方の発光素子2と他方の発光素子2の電極上を架橋する一対の導電部
材3(3a、3b)を形成する。
その後、図1E及び図1Fに示されるように、少なくとも発光素子2間を被覆する遮光
部材4を形成する。
そして、図1G及び図1Hに示されるように、少なくとも、発光素子2間の一対の導電
部3a、3b及び遮光部材4を、主発光面Mに対して垂直な方向に切断する。実施形態1
では、この切断面を発光装置10の実装面Sとすることができる。
さらに、適宜遮光部材4を発光素子2の側面に沿って切断することで、図1Jに示され
るように、主発光面Mに対して実装面Sが垂直なサイドビュー型の発光装置10に個片化
することができる。
以上のように、実施形態1では、導電部材3を形成してから遮光部材4を形成する。な
お、後述するように、各工程の順序を入れ替えてもよく、それらの形態については、実施
形態2〜4で詳述する。
以下、実施形態1の各工程について図面を用いて詳細に説明する。
First Embodiment
FIG. 1A is a schematic plan view showing a step of arranging a light emitting element on a base according to a method of manufacturing a light emitting device of Embodiment 1. FIG. FIG. 1B is a schematic cross-sectional view taken along line XX ′ of FIG. 1A. FIG. 1C is a schematic plan view showing a step of forming a conductive member according to the method of manufacturing a light emitting device of Embodiment 1. FIG. 1D is a schematic cross-sectional view taken along line XX ′ of FIG. 1C. 1E and 1
F is a schematic sectional drawing which shows the process of forming a light-shielding member based on the manufacturing method of the light-emitting device of Embodiment 1. FIG. 1G and 1H are schematic cross-sectional views showing steps of cutting a conductive member according to the method of manufacturing a light emitting device of Embodiment 1. FIG. FIG. 1I is a schematic front view of a light emitting module in which the light emitting device according to the first embodiment is mounted on a mounting substrate as viewed from a light emitting surface side. FIG. 1J is a schematic cross-sectional view of the light emitting device according to the first embodiment. In the first embodiment, each light emitting device 10 is formed by performing at least the following steps.
First, as shown in FIGS. 1A and 1B, the two light emitting elements 2 include the main light emitting surface M and a surface opposite to the main light emitting surface M and having the pair of electrodes 2a and 2b. Equipped, electrode 2
It arranges on the base 1 so that a and 2b face up and adjacent to each other.
Then, as shown in FIG. 1C and FIG. 1D, a pair of conductive members 3 (3a, 3b) extending from the electrodes 2a, 2b of one light emitting element 2 to the electrodes 2a, 2b of the other light emitting element 2 are formed. In other words, a pair of conductive members 3 (3a, 3b) are formed to bridge over the electrodes of one light emitting element 2 and the other light emitting element 2.
Thereafter, as shown in FIG. 1E and FIG. 1F, a light shielding member 4 covering at least the light emitting elements 2 is formed.
Then, as shown in FIG. 1G and FIG. 1H, at least a pair of conductive parts 3a and 3b between the light emitting elements 2 and the light shielding member 4 are cut in the direction perpendicular to the main light emitting surface M. Embodiment 1
Then, this cut surface can be used as the mounting surface S of the light emitting device 10.
Furthermore, by appropriately cutting the light shielding member 4 along the side surface of the light emitting element 2, as shown in FIG. 1J, the side view type light emitting device 10 in which the mounting surface S is perpendicular to the main light emitting surface M It can be shredded.
As described above, in the first embodiment, the light shielding member 4 is formed after the conductive member 3 is formed. In addition, as described later, the order of the respective steps may be changed, and the form thereof will be described in detail in the second to fourth embodiments.
Hereinafter, each process of Embodiment 1 is demonstrated in detail using drawing.

(発光素子の基体上への配置)
図1A及び図1Bに示されるように、主発光面Mと、主発光面Mと反対側の面であって
一対の電極2a、2bを有する面と、を備える2つの発光素子2を、電極2a、2bを上
向きにして隣接するように基体1上に配置する。
まず、発光素子2を少なくとも2つ準備する。発光素子2は、少なくとも発光層を含む
半導体層を含み、主発光面Mと、主発光面Mと反対側の面であって正負一対の電極2a、
2bを有する面と、を有する。このように、ウエハ状態から個々に分離した発光素子2を
、選別を行った後に、所望の配光を有するものだけを基体1上に配置することができるの
で、歩留まりよく発光装置を形成することができる。
(Placement of the light emitting element on the substrate)
As shown in FIG. 1A and FIG. 1B, two light emitting elements 2 each having a main light emitting surface M and a surface opposite to the main light emitting surface M and having a pair of electrodes 2a and 2b are It arrange | positions on the base | substrate 1 so that 2a, 2b may face up and it adjoins.
First, at least two light emitting elements 2 are prepared. The light emitting element 2 includes a semiconductor layer including at least a light emitting layer, and is a main light emitting surface M and a surface opposite to the main light emitting surface M, and has a pair of positive and negative electrodes 2a,
And 2b. As described above, since the light emitting elements 2 individually separated from the wafer state can be disposed on the substrate 1 only after having the desired light distribution, the light emitting device can be formed with high yield. Can.

発光素子2の平面形状は、円形、楕円形、三角形、四角形及び六角形等の多角形等のい
ずれであってもよい。また、発光素子2の大きさ及び厚みは、適宜選択することができる
。実施形態1では、例えば、平面形状が矩形の発光素子2を用いることができる。
The planar shape of the light emitting element 2 may be any of a circle, an ellipse, a triangle, and a polygon such as a square and a hexagon. Further, the size and thickness of the light emitting element 2 can be appropriately selected. In the first embodiment, for example, the light emitting element 2 having a rectangular planar shape can be used.

また、発光素子2を配置する基体1を準備する。基体1は、後に導電部材及び遮光部材
を切断する前に除去してもよいし、導電部材及び遮光部材とともに切断することで、発光
装置の一部として用いてもよい。
Further, the base 1 on which the light emitting element 2 is to be disposed is prepared. The base 1 may be removed before cutting the conductive member and the light shielding member later, or may be used as part of a light emitting device by cutting with the conductive member and the light shielding member.

次に、準備した発光素子2を、基体1上へ配置する。実施形態1では、2つの発光素子
2を1組として、1組以上の発光素子2を基体1上に配置し、後の工程において、それぞ
れの組に対して少なくとも一対の導電部材を、2つの発光素子が向かい合う側の面と反対
側の面から突出しないように形成することができる。これにより、個々の発光装置に個片
化したときに、実装面と反対側の上面から導電部材が露出しない、光吸収の少ないサイド
ビュー型の発光装置を無駄なく効率的に形成することが可能である。しかし、これに限ら
ず、3つ以上の発光素子を配置してもよい。この形態については、実施形態5で詳述する
Next, the prepared light emitting element 2 is placed on the substrate 1. In the first embodiment, two light emitting elements 2 are set as one set, and one or more sets of light emitting elements 2 are disposed on the base 1. In a later step, at least one pair of conductive members for each set is The light emitting element can be formed so as not to protrude from the opposite surface to the opposite surface. Thereby, when singulated into individual light emitting devices, it is possible to efficiently form a side view type light emitting device with little light absorption, in which the conductive member is not exposed from the upper surface opposite to the mounting surface It is. However, not limited to this, three or more light emitting elements may be disposed. This form will be described in detail in the fifth embodiment.

実施形態1では、発光素子2の電極2a、2bを上向きに、つまり、主発光面Mが基体
1と接する(対向する)ように、2つの発光素子2を隣接させて基体1上に配置する。こ
れにより、後の工程において電極上に導電部材を形成しやすく、さらに、主発光面Mを露
出させるように遮光部材を形成しやすい。
また、2つの発光素子2は、一方の発光素子2の一対の電極2a、2bと、他方の発光
素子2の一対の電極2a、2bとが対向するように(すなわち、実施形態1では2つの発
光素子2の長手方向の側面が対向するように)配置することが好ましい。これにより、一
方の発光素子2の1つの電極と、他方の発光素子2の1つの電極とが対向する(すなわち
、2つの発光素子2の短手方向の側面が対向する)ように配置する場合に比べ、後の工程
において導電部材を少ない量で容易に形成しやすい。
In the first embodiment, the two light emitting elements 2 are disposed adjacent to each other on the base 1 with the electrodes 2 a and 2 b of the light emitting element 2 facing upward, that is, the main light emitting surface M contacts (faces) the base 1. . Thus, the conductive member can be easily formed on the electrode in a later process, and the light shielding member can be easily formed so as to expose the main light emitting surface M.
Further, in the two light emitting elements 2, the pair of electrodes 2 a and 2 b of one light emitting element 2 and the pair of electrodes 2 a and 2 b of the other light emitting element 2 face each other (that is, two in Embodiment 1) It is preferable to arrange so that the side surfaces in the longitudinal direction of the light emitting element 2 face each other. Thus, in the case where one electrode of one light emitting element 2 and one electrode of the other light emitting element 2 face each other (that is, the side faces in the short direction of the two light emitting elements 2 face each other) Compared to the above, it is easy to form the conductive member in a smaller amount in a later step.

さらに、2つの発光素子2は、それぞれの発光素子2の異極同士が隣接するように配置
することが好ましい。具体的には、図1Aに示されるように、一方の発光素子2の正電極
2aと他方の発光素子2の負電極2bとが対向し、且つ、一方の発光素子2の負電極2b
と他方の発光素子2の正電極2aとが対向するように、2つの発光素子2を配置すること
が好ましい。これにより、発光装置の実装面において、正負の端子(正負の電極に接続す
るそれぞれの導電部材)の左右の位置を同じにすることができる。
なお、2つの発光素子2において、それぞれの発光素子2の同極同士が隣接するように
配置してもよい。これにより、発光素子2の向きを変更せずに同じ向きで配置することが
できるので、基体1上への配置が容易である。さらに、実装面において正負の端子の左右
の位置が異なる発光装置を形成することができる。
Furthermore, it is preferable to arrange the two light emitting elements 2 so that the different poles of the respective light emitting elements 2 are adjacent to each other. Specifically, as shown in FIG. 1A, the positive electrode 2a of one light emitting element 2 and the negative electrode 2b of the other light emitting element 2 face each other, and the negative electrode 2b of one light emitting element 2
It is preferable to arrange the two light emitting elements 2 so that the positive electrode 2a of the other light emitting element 2 is opposite to each other. Thereby, on the mounting surface of the light emitting device, the left and right positions of the positive and negative terminals (the respective conductive members connected to the positive and negative electrodes) can be made the same.
In the two light emitting elements 2, the same poles of the respective light emitting elements 2 may be arranged to be adjacent to each other. As a result, the light emitting elements 2 can be arranged in the same direction without changing the direction of the light emitting elements 2, so the arrangement on the base 1 is easy. Furthermore, it is possible to form a light emitting device in which the left and right positions of the positive and negative terminals are different on the mounting surface.

2つの発光素子2の配置間隔は、任意に設定することができる。この間隔は、後述する
遮光部材の厚みに影響を与える。よって、所望の遮光部材の厚みとできるように、間隔の
広狭を調整することが好ましい。例えば、発光素子の配置精度、後の個片化工程における
切断位置精度、遮光部材の構成にもよるが、30μm〜300μm程度の間隔を空けて配
置することができる。これにより、後の工程において導電部材を形成しやすく、且つ、主
発光面以外から漏れる光を十分に遮光可能な遮光部材を形成することができる。さらに、
取り数を確保することができ、効率よく発光装置を製造することができる。
The arrangement interval of the two light emitting elements 2 can be set arbitrarily. This interval affects the thickness of the light shielding member described later. Therefore, it is preferable to adjust the width of the gap so as to obtain the desired thickness of the light shielding member. For example, although it depends on the arrangement accuracy of the light emitting element, the cutting position accuracy in the subsequent individualization process, and the configuration of the light shielding member, the light emitting device can be arranged at intervals of about 30 μm to 300 μm. Accordingly, it is possible to easily form a conductive member in a later process and to form a light shielding member capable of sufficiently shielding light leaking from other than the main light emitting surface. further,
The number of chips can be secured, and the light emitting device can be manufactured efficiently.

基体1上に発光素子2を配置する際、例えば、予め基体1及び/又は発光素子2に接着
剤を配置しておき、該接着剤により発光素子2を基体1上に固定することができる。接着
剤としては、樹脂等の当該分野で公知のものを用いることができ、特に、基体1を発光装
置の一部として用いる場合は、透光性を有する樹脂を用いることが好ましい。なお、粘着
性を有する基体1を用いる場合は、基体1の粘着性によって、発光素子2を基体上に固定
してもよい。これにより、少ない工程数で効率よく発光素子2を配置することができる。
When disposing the light emitting element 2 on the substrate 1, for example, an adhesive may be disposed in advance on the substrate 1 and / or the light emitting element 2, and the light emitting element 2 may be fixed on the substrate 1 by the adhesive. As the adhesive, those known in the art such as resins can be used. In particular, when the substrate 1 is used as a part of a light emitting device, it is preferable to use a resin having translucency. When the substrate 1 having adhesiveness is used, the light emitting element 2 may be fixed on the substrate by the adhesiveness of the substrate 1. Thus, the light emitting element 2 can be efficiently disposed with a small number of steps.

(導電部材の形成)
実施形態1では、次に、図1C及び図1Dに示されるように、一方の発光素子2の電極
から他方の発光素子2の電極にわたる一対の導電部材3を形成する。すなわち、2つの発
光素子2上に架橋するように、一対の導電部材3を形成する。実施形態1では、2つの発
光素子2の隣接する異極にわたる導電部材3を形成することができる。具体的には、一方
の発光素子2の正電極2aと他方の発光素子2の負電極2bとにわたる導電部材3aと、
一方の発光素子2の負電極2bと他方の発光素子2の正電極2aとにわたる導電部材3b
を形成することができる。
(Formation of a conductive member)
In Embodiment 1, next, as shown in FIG. 1C and FIG. 1D, a pair of conductive members 3 is formed from the electrode of one light emitting element 2 to the electrode of the other light emitting element 2. That is, the pair of conductive members 3 is formed so as to crosslink the two light emitting elements 2. In the first embodiment, the conductive member 3 can be formed across the adjacent different poles of the two light emitting elements 2. Specifically, a conductive member 3a extending between the positive electrode 2a of one light emitting element 2 and the negative electrode 2b of the other light emitting element 2;
A conductive member 3b extending between the negative electrode 2b of one light emitting element 2 and the positive electrode 2a of the other light emitting element 2
Can be formed.

導電部材3は、発光素子2間において発光素子2の電極2a、2bの上面よりも下側ま
で形成することが好ましい。これにより、後の工程において、発光素子間の一対の導電部
材3及び遮光部材を切断した切断面(発光装置の実装面)から導電部材を露出させやすい
。また、発光装置の短絡を防ぐために、導電部材3を半導体層に直接接触しないように設
けることが好ましい。したがって、実施形態1では、例えば、発光素子2間において、電
極2a、2bの側面を被覆し、且つ、電極2a、2bの下面よりも上側までの領域に導電
部材3を形成することができる。この場合、電極2a、2bの厚みを厚く設けておくこと
で、導電部材3を半導体層に直接接触しないように形成しやすい。例えば、実施形態1で
は、電極2a、2bの厚みを10μm以上、より好ましくは50μm以上とすることがで
きる。これにより、導電部材3が半導体層と接触することを防ぐことができる。また、発
光装置の実装面から露出する導電部材の面積を確保することができる。なお、発光素子2
の電極2a、2bの厚みは異なっていてもよい。
The conductive member 3 is preferably formed between the light emitting elements 2 to a lower side than the upper surfaces of the electrodes 2 a and 2 b of the light emitting elements 2. Accordingly, in the subsequent process, the conductive member can be easily exposed from the cut surface (mounting surface of the light emitting device) obtained by cutting the pair of conductive members 3 and the light shielding member between the light emitting elements. Further, in order to prevent a short circuit of the light emitting device, the conductive member 3 is preferably provided so as not to be in direct contact with the semiconductor layer. Therefore, in the first embodiment, for example, between the light emitting elements 2, the conductive member 3 can be formed in a region covering the side surfaces of the electrodes 2a and 2b and above the lower surface of the electrodes 2a and 2b. In this case, by providing the electrodes 2a and 2b with a large thickness, the conductive member 3 can be easily formed so as not to be in direct contact with the semiconductor layer. For example, in the first embodiment, the thickness of the electrodes 2a and 2b can be 10 μm or more, more preferably 50 μm or more. This can prevent the conductive member 3 from coming into contact with the semiconductor layer. In addition, the area of the conductive member exposed from the mounting surface of the light emitting device can be secured. Light emitting element 2
The thickness of the electrodes 2a and 2b may be different.

発光素子2の表面が絶縁部材によって被覆されて絶縁性が確保される場合には、導電部
材3を電極2a、2bの下面よりも下側、例えば半導体層の側面まで形成してもよい。こ
れにより、発光装置の実装面に露出する導電部材3の面積を広くすることができ、放熱性
、実装性が高い発光装置を形成することができる。ただし、導電部材3は、発光素子2の
主発光面Mよりも上側までの領域に形成することが好ましい。すなわち、導電部材3は、
発光素子2間の基体1と接触しないように形成することが好ましい。これにより、発光装
置において、導電部材3が主発光面Mと同一面上に露出されることによる光吸収を抑制す
ることができる。
When the surface of the light emitting element 2 is covered with an insulating member to ensure insulation, the conductive member 3 may be formed below the lower surface of the electrodes 2a and 2b, for example, to the side surface of the semiconductor layer. Thus, the area of the conductive member 3 exposed to the mounting surface of the light emitting device can be increased, and a light emitting device with high heat dissipation and mounting can be formed. However, it is preferable to form the conductive member 3 in a region up to the main light emitting surface M of the light emitting element 2. That is, the conductive member 3 is
It is preferable to form so as not to contact the base 1 between the light emitting elements 2. Thereby, in the light emitting device, light absorption due to the conductive member 3 being exposed on the same plane as the main light emitting surface M can be suppressed.

導電部材は、例えば、導電性ペースト又は半田を用いて、ポッティング、描画、印刷、
溶射等の塗布法で配置し、加熱によって硬化することで形成できる。これにより、鍍金等
で導電部材を形成する場合と比べて、コストと時間を削減することができる。特に、実施
形態1のように遮光部材よりも先に導電部材3を形成する場合は、導電部材3として半田
を塗布することが好ましい。これにより、所望の量の導電部材を所望の位置に形成しやす
く、一対の電極2a、2bの上面にわたる一対の導電部材3a、3bを形成しやすい。な
お、半田としては、比較的高融点であるAuSnを用いると、発光装置を実装基板へ実装
する際の導電部材3の再溶融を防止することができ好ましい。
The conductive member is, for example, potted, drawn, printed, using conductive paste or solder.
It can be formed by arranging by a coating method such as thermal spraying and curing by heating. Thereby, cost and time can be reduced as compared with the case of forming the conductive member by plating or the like. In particular, when the conductive member 3 is formed prior to the light shielding member as in the first embodiment, it is preferable to apply solder as the conductive member 3. As a result, a desired amount of conductive members can be easily formed at desired positions, and a pair of conductive members 3a and 3b can be easily formed over the top surfaces of the pair of electrodes 2a and 2b. It is preferable to use AuSn, which has a relatively high melting point, as the solder, because it can prevent remelting of the conductive member 3 when mounting the light emitting device on a mounting substrate.

なお、実施形態1のように、遮光部材4よりも先に導電部材3を形成する場合は、前述
のような所望の領域に導電部材3を保持させるために、配置する際の導電部材3の粘度を
調整することが好ましい。例えば、導電部材3として粘度50Pa・s〜500Pa・s
、より好ましくは粘度200Pa・s〜300Pa・s程度のAuSuペーストを準備し
、適宜量を調整しながら所望の領域に形成することができる。このように、粘度を調整し
た導電部材3を用いることで、導電部材3を所望の位置に保持させておくことができるの
で、少ない工程数で効率よく発光装置を形成することができる。
When the conductive member 3 is formed prior to the light shielding member 4 as in the first embodiment, the conductive member 3 is disposed in order to hold the conductive member 3 in the desired region as described above. It is preferable to adjust the viscosity. For example, the viscosity of 50 Pa · s to 500 Pa · s as the conductive member 3
More preferably, an AuSu paste having a viscosity of about 200 Pa · s to 300 Pa · s can be prepared and formed in a desired region while adjusting the amount appropriately. As described above, since the conductive member 3 can be held at a desired position by using the conductive member 3 whose viscosity is adjusted, the light emitting device can be efficiently formed with a small number of steps.

(遮光部材の形成)
実施形態1では、次に、図1E及び図1Fに示すように、少なくとも発光素子2間を被
覆する遮光部材4を形成する。具体的には、主発光面Mを露出させるように、2つの発光
素子2及び一対の導電部材3を被覆する遮光部材4を基体1上に形成する。これにより、
発光素子2の一対の導電部材3a、3bを絶縁させることができ、さらに、主発光面M以
外からの光漏れを防止することができる。
(Formation of light shielding member)
In the first embodiment, next, as shown in FIGS. 1E and 1F, a light shielding member 4 that covers at least the space between the light emitting elements 2 is formed. Specifically, the light shielding member 4 covering the two light emitting elements 2 and the pair of conductive members 3 is formed on the base 1 so as to expose the main light emitting surface M. By this,
The pair of conductive members 3a and 3b of the light emitting element 2 can be insulated, and light leakage from other than the main light emitting surface M can be prevented.

ここで、図1Fに示すように、遮光部材4の上面から導電部材3が露出するように形成
してもよい。例えば、図1Eに示すように、遮光部材4を導電部材3の上面まで被覆する
高さで形成しておき、切削や研磨等によって遮光部材4の上部を除去することで、導電部
材3を露出させることができる。または、遮光部材4及び導電部材3の上部を除去するこ
とで、導電部材3を露出させてもよい。製造工程における上面側は、発光装置の背面側と
なるので、このように導電部材3の上面を露出させておくことで、発光装置の背面からも
端子として導電部材3を露出させることができる。これにより、放熱性、実装性が高い発
光装置を形成しやすい。
Here, as shown in FIG. 1F, the conductive member 3 may be exposed from the upper surface of the light shielding member 4. For example, as shown in FIG. 1E, the light shielding member 4 is formed to have a height covering the upper surface of the conductive member 3 and the upper portion of the light shielding member 4 is removed by cutting or polishing to expose the conductive member 3 It can be done. Alternatively, the conductive member 3 may be exposed by removing the upper portions of the light blocking member 4 and the conductive member 3. Since the upper surface side in the manufacturing process is the back surface side of the light emitting device, the conductive member 3 can be exposed as a terminal also from the back surface of the light emitting device by thus exposing the upper surface of the conductive member 3. Accordingly, it is easy to form a light emitting device with high heat dissipation and high mountability.

遮光部材4としては、樹脂等の母材に光反射性又は光吸収性物質を含有させたものを用
いることができ、トランスファーモールド、コンプレッションモールド、スクリーン印刷
、ポッティング等で成形、硬化させることで形成できる。特に、導電部材3の下方の発光
素子2間まで確実に遮光部材4を形成できることから、コンプレッションモールド、トラ
ンスファーモールドが好ましい。
なお、遮光部材は、前述のように一度に形成(形成した遮光部材の一部を除去する形態
も一度に形成すると表す)してもよいし、さらに遮光部材を設けてもよい。すなわち、遮
光部材を複数回に分けて形成してもよい。この形態については、実施形態4で詳述する。
The light shielding member 4 may be made of a base material such as a resin and the like that contains a light reflective or light absorbing material, and is formed by molding and curing by transfer molding, compression molding, screen printing, potting or the like. it can. In particular, since the light shielding member 4 can be formed reliably between the light emitting elements 2 below the conductive member 3, a compression mold and a transfer mold are preferable.
As described above, the light shielding member may be formed at one time (in a mode in which a part of the formed light shielding member is removed is also formed at one time), and a light shielding member may be further provided. That is, the light shielding member may be formed in plural times. This form will be described in detail in the fourth embodiment.

(導電部材の切断)
次に、実施形態1では、図1G及び図1Hに示すように、発光素子2間の一対の導電部
材3及び遮光部材4を、発光素子2の主発光面Mに対して垂直に交差する方向に切断する
。これにより、発光装置の発光面(主発光面M)に対して垂直で、且つ一対の導電部材3
が露出される発光装置10の実装面Sを形成することができる。実施形態1では、さらに
発光素子2の側面に沿って平行に遮光部材4を切断することで、図1Hに示すように、個
々の発光装置10に個片化することができる。
(Cutting of conductive member)
Next, in the first embodiment, as shown in FIGS. 1G and 1H, a direction in which the pair of conductive members 3 and the light shielding member 4 between the light emitting elements 2 perpendicularly intersect with the main light emitting surface M of the light emitting elements 2 Cut into Thereby, the pair of conductive members 3 is perpendicular to the light emitting surface (main light emitting surface M) of the light emitting device.
Can be formed on the mounting surface S of the light emitting device 10 to be exposed. In Embodiment 1, by further cutting the light shielding member 4 in parallel along the side surface of the light emitting element 2, individual light emitting devices 10 can be singulated as shown in FIG. 1H.

基体1上に配置する発光素子の平面形状は、前述のように特に限定されないが、同じ形
状のものを用いると、導電部材3及び/又は遮光部材4を発光素子に沿って切断しやすい
。実施形態1では、2つの矩形の発光素子2の側面が対向するように配置しているので、
発光素子2の側面に沿って導電部材3及び/又は遮光部材4を切断しやすく、効率的に個
々の発光装置を個片化することができる。
The planar shape of the light emitting element disposed on the substrate 1 is not particularly limited as described above, but if the same shape is used, the conductive member 3 and / or the light shielding member 4 can be easily cut along the light emitting element. In the first embodiment, since the side surfaces of the two rectangular light emitting elements 2 are arranged to face each other,
The conductive member 3 and / or the light shielding member 4 can be easily cut along the side surfaces of the light emitting element 2, and the individual light emitting devices can be efficiently separated.

切断は、当該分野で公知の切断方法、例えば、ブレード5を用いたブレードダイシング
や、レーザダイシング、カッタースクライブ等を利用することができる。
For the cutting, a cutting method known in the art, such as blade dicing using a blade 5, laser dicing, cutter scribing, etc. can be used.

前述のように個片化することで、図1Iに示すように、実装基板6に実装する場合に、
実装面Sが主発光面Mに対して垂直なサイドビュー型の発光装置10を形成することがで
きる。実施形態1のように、一対の導電部材3を、2つの発光素子にわたるように導電性
ペーストや共晶合金を配置して形成することで、鍍金等で導電部材を形成する場合に比べ
て時間及びコストを低減して発光装置を形成することができる。さらに、遮光部材形成工
程において、導電部材3の上面を露出させておくことで、発光装置10の背面Uからも一
対の導電部材3を露出させることができる。これにより、放熱性及び実装基板6への実装
性の高い発光装置10を形成することができる。また、実装後に、前方から発光装置に応
力が負荷される場合でも、背面側に倒れ難い発光装置10を形成することができる。
なお、実装面から露出する各導電部材の面積は、発光装置を実装基板へ実装する際に接
合強度が十分に確保できる程度であると好ましく、例えば、実装面から露出する各導電部
材の面積は、それぞれ0.03mm以上とすることができる。また、実装面から露出す
る各導電部材の面積は、発光装置を実装基板へ実装したときにショートしない程度であれ
ば、大きいほど好ましい。
In the case of mounting on the mounting substrate 6 as shown in FIG.
The side view type light emitting device 10 in which the mounting surface S is perpendicular to the main light emitting surface M can be formed. As in the first embodiment, by forming the conductive paste or the eutectic alloy so as to cover the two light emitting elements as in the case of the pair of conductive members 3, the time is longer than when forming the conductive member by plating or the like. And cost can be reduced to form a light emitting device. Further, by exposing the upper surface of the conductive member 3 in the light shielding member forming step, the pair of conductive members 3 can be exposed also from the back surface U of the light emitting device 10. Thus, the light emitting device 10 can be formed with high heat dissipation and high mountability to the mounting substrate 6. Moreover, even if stress is applied to the light emitting device from the front after mounting, the light emitting device 10 can be formed that is unlikely to fall to the back side.
The area of each conductive member exposed from the mounting surface is preferably such that the bonding strength can be sufficiently secured when mounting the light emitting device on the mounting substrate. For example, the area of each conductive member exposed from the mounting surface is , Can be 0.03 mm 2 or more, respectively. Further, the area of each conductive member exposed from the mounting surface is preferably as large as possible without causing a short circuit when the light emitting device is mounted on the mounting substrate.

(その他の工程)
以上の工程の他に、例えば、波長変換層を形成する工程、透光層を形成する工程、端子
被覆膜を形成する工程等を適宜行ってもよい。
(Other process)
In addition to the above steps, for example, a step of forming a wavelength conversion layer, a step of forming a light transmitting layer, a step of forming a terminal covering film, and the like may be appropriately performed.

波長変換層を形成する工程では、主発光面Mから出射される光を所望の波長に変換する
波長変換層7を、主発光面Mを被覆するように形成することができる。波長変換層7とし
ては、例えば樹脂やガラス等の母材に蛍光体等の波長変換材料を含有したものを用いるこ
とができる。波長変換7は、スプレー、印刷、塗布、貼り付け等の所望の方法で形成する
ことができる。前述のように、波長変換材料を含有した透光性の樹脂等からなる基体1を
用い、基体1を波長変換層7として用いてもよい。また、周縁を遮光部材の枠で囲まれた
波長変換層を予め形成しておき、主発光面に貼り付けることで、見切りの良い発光装置を
形成することが可能である。
In the step of forming the wavelength conversion layer, the wavelength conversion layer 7 for converting the light emitted from the main light emission surface M into a desired wavelength can be formed to cover the main light emission surface M. As the wavelength conversion layer 7, for example, a base material such as a resin or glass containing a wavelength conversion material such as a phosphor can be used. The wavelength conversion 7 can be formed by a desired method such as spraying, printing, application, and sticking. As described above, the substrate 1 may be used as the wavelength conversion layer 7 by using the substrate 1 made of a translucent resin containing a wavelength conversion material. In addition, it is possible to form a light emitting device with good cutoff by forming a wavelength conversion layer whose periphery is surrounded by the frame of the light shielding member in advance and attaching it to the main light emitting surface.

透光層を形成する工程は、発光装置の発光面(具体的には、波長変換層7や主発光面M
)上に、透光性を有する透光層8を形成する工程である。透光層8を形成することで、発
光装置の発光面を保護することができる。透光層8としては、例えば透光性を有する樹脂
やガラス等を用いることができる。また、フィラー等を含有させることで、光の取り出し
向上や、タック性を低減させることが可能である。透光層8は、例えばスプレー、印刷、
塗布、貼り付け等の所望の方法で形成することができる。
なお、波長変換層7を形成する工程、透光層8を形成する工程は、一対の導電部材3a
、3bの切断(個片化)前に行うことが好ましい。
In the step of forming the light transmitting layer, the light emitting surface of the light emitting device (specifically, the wavelength conversion layer 7 or the main light emitting surface M
) Is a step of forming a translucent layer 8 having transparency. By forming the light transmitting layer 8, the light emitting surface of the light emitting device can be protected. As the light transmitting layer 8, for example, resin, glass or the like having light transmitting property can be used. Further, by incorporating a filler or the like, it is possible to improve the light extraction and reduce the tackiness. The light transmitting layer 8 is, for example, a spray, a print,
It can be formed by a desired method such as application, adhesion and the like.
The step of forming the wavelength conversion layer 7 and the step of forming the light transmitting layer 8 are a pair of conductive members 3a.
It is preferable to carry out before the cutting (separating) of 3b.

端子被覆膜を形成する工程は、発光素子2間の一対の導電部材3a、3b及び遮光部材
4を切断して露出させた実装面の一対の導電部材3a、3b、すなわち発光装置の端子を
保護する端子被覆膜9を形成する工程である。端子被覆膜9としては、金、銀、ニッケル
、アルミニウム、ロジウム、銅、又はこれらの合金などを用いることができる。端子被覆
膜9は、例えば、厚み0.03μm〜0.5μmで設けることができる。これにより、導
電部材の劣化を防止することができる。端子被覆膜9は、例えば鍍金やスパッタ等によっ
て形成することができる。特に、実装面Sの遮光部材4及び一対の導電部材3a、3b上
に、例えばスパッタ等で一体に被覆膜を形成後、実装面Sの全体にレーザを照射すること
で、遮光部材4上に形成された被覆膜のみを除去することができ、端子被覆膜9を効率的
に形成することができる。また、レーザを照射することで実装面Sが粗面化され、発光装
置のタック性を低減させることができる。なお、端子被覆膜9は、実装面Sに露出する導
電部材3a、3bの他、発光装置の背面U、側面、上面から導電部材が露出されている場
合は、適宜その導電部材を被覆するように設けてもよい。
In the step of forming the terminal covering film, the pair of conductive members 3a and 3b between the light emitting elements 2 and the pair of conductive members 3a and 3b of the mounting surface on which the light shielding member 4 is cut and exposed are terminals of the light emitting device. This is a step of forming the terminal covering film 9 to be protected. As the terminal covering film 9, gold, silver, nickel, aluminum, rhodium, copper, or an alloy of these, or the like can be used. The terminal covering film 9 can be provided, for example, with a thickness of 0.03 μm to 0.5 μm. Thereby, the deterioration of the conductive member can be prevented. The terminal covering film 9 can be formed, for example, by plating or sputtering. In particular, a coating film is integrally formed on the light shielding member 4 of the mounting surface S and the pair of conductive members 3a and 3b by sputtering, for example, and then the entire mounting surface S is irradiated with a laser. It is possible to remove only the covering film formed in the above, and the terminal covering film 9 can be formed efficiently. Further, by irradiating the laser, the mounting surface S is roughened, and the tackiness of the light emitting device can be reduced. In addition to the conductive members 3a and 3b exposed to the mounting surface S, the terminal covering film 9 appropriately covers the conductive members when the conductive members are exposed from the back surface U, the side surface, and the upper surface of the light emitting device. It may be provided as follows.

以下、各構成部材について詳細に説明する。   Hereinafter, each component will be described in detail.

(発光素子)
発光素子2は、当該分野で一般的に用いられる発光ダイオード、レーザダイオード等を
用いることができる。例えば、窒化物系半導体(InXAlYGa1-X-YN、0≦X、0≦
Y、X+Y≦1)、GaP、GaAsなどのIII−V族化合物半導体、ZnSe、II
−VI族化合物半導体等、種々の半導体を利用することができる。なお、発光素子2は、
半導体層を成長させるための基板を有していてもよい。基板としては、サファイア等の絶
縁性基板、SiC、ZnO、Si、GaAs、ダイヤモンド、窒化物半導体と格子接合す
るニオブ酸リチウム、ガリウム酸ネオジム等の酸化物からなる基板が挙げられる。なお、
基板はレーザリフトオフ法等を利用して除去されていてもよい。
(Light emitting element)
As the light emitting element 2, a light emitting diode, a laser diode or the like generally used in the relevant field can be used. For example, nitride semiconductors (In x Al Y Ga 1-XY N, 0 ≦ x, 0 ≦
Y, X + Y ≦ 1), GaP, III-V compound semiconductor such as GaAs, ZnSe, II
Various semiconductors such as a group VI compound semiconductor can be used. The light emitting element 2 is
It may have a substrate for growing the semiconductor layer. Examples of the substrate include insulating substrates such as sapphire, and substrates made of oxides such as lithium niobate and neodymium gallium oxide lattice-joined to SiC, ZnO, Si, GaAs, diamond, and nitride semiconductors. Note that
The substrate may be removed using a laser lift off method or the like.

(基体)
基体1は、前述のようにシート状の樹脂、セラミックス、ガラス等を用いることができ
る。特に、耐熱性の観点から、シート状のポリイミド樹脂を用いることが好ましい。
基体1の平面形状、大きさ、厚み等は、配置する発光素子2の大きさや数によって適宜
調整することができる。特に、均一な厚みを有し、その表面が平坦なシート状の基体1で
あると、発光素子2を安定的に配置しやすく好ましい。
(Substrate)
As described above, sheet-like resin, ceramic, glass or the like can be used for the substrate 1. In particular, it is preferable to use a sheet-like polyimide resin from the viewpoint of heat resistance.
The planar shape, size, thickness and the like of the substrate 1 can be appropriately adjusted depending on the size and the number of the light emitting elements 2 to be disposed. In particular, when the substrate 1 is a sheet-like substrate 1 having a uniform thickness and a flat surface, the light-emitting element 2 can be stably disposed, which is preferable.

基体1を発光装置の一部として用いる場合は、透光性を有していると好ましく、発光素
子2からの光の透過率が60%以上、70%以上、80%以上、90%以上であるものが
好ましい。
特に、基体1を発光装置の一部として用いる場合は、基体1として樹脂を用いることが
好ましく、シリコーン樹脂、シリコーン変性樹脂、エポキシ樹脂、エポキシ変性樹脂、フ
ェノール樹脂、ポリカーボネート樹脂、アクリル樹脂、TPX樹脂、ポリノルボルネン樹
脂、又はこれらの樹脂を1種以上含むハイブリッド樹脂等の樹脂等によって形成されたも
のが挙げられる。なかでも、シリコーン樹脂又はエポキシ樹脂が好ましく、特に耐光性、
耐熱性に優れるシリコーン樹脂が好ましい。
In the case of using the substrate 1 as a part of a light emitting device, it is preferable that the substrate 1 have translucency, and the transmittance of light from the light emitting element 2 is 60% or more, 70% or more, 80% or more, 90% or more Some are preferred.
In particular, when the substrate 1 is used as a part of a light emitting device, it is preferable to use a resin as the substrate 1, and silicone resin, silicone modified resin, epoxy resin, epoxy modified resin, phenol resin, polycarbonate resin, acrylic resin, TPX resin And resins made of, for example, polynorbornene resins or hybrid resins containing one or more of these resins. Among them, silicone resins or epoxy resins are preferable, and in particular, light resistance,
The silicone resin which is excellent in heat resistance is preferred.

さらに、基体1を発光装置の一部として用いる場合、基体1に発光素子からの光を波長
変換する波長変換部材、例えば、蛍光体及び/又は発光物質を含有させると、発光装置の
波長変換層として用いることができる。
蛍光体及び/又は発光物質は、当該分野で公知のものを使用することができる。例えば
、セリウムで賦活されたイットリウム・アルミニウム・ガーネット(YAG)系蛍光体、
セリウムで賦活されたルテチウム・アルミニウム・ガーネット(LAG)、ユウロピウム
及び/又はクロムで賦活された窒素含有アルミノ珪酸カルシウム(CaO−Al23−S
iO2)系蛍光体、ユウロピウムで賦活されたシリケート((Sr,Ba)2SiO4)系
蛍光体、βサイアロン蛍光体、CASN系又はSCASN系蛍光体等の窒化物系蛍光体、
KSF系蛍光体(K2SiF6:Mn)、硫化物系蛍光体等、ナノクリスタル、量子ドット
と称される発光物質等が挙げられる。発光物質の材料としては、半導体材料、例えば、I
I−VI族、III−V族、IV−VI族半導体、具体的には、CdSe、コアシェル型
のCdSxSe1-x/ZnS、GaP等のナノサイズの高分散粒子が挙げられる。
Furthermore, when the substrate 1 is used as a part of a light emitting device, the wavelength conversion layer of the light emitting device may be obtained by including a wavelength conversion member for converting the wavelength of light from the light emitting element into the substrate 1. It can be used as
As the phosphor and / or the light emitting substance, those known in the art can be used. For example, yttrium activated aluminum garnet (YAG) phosphor activated with cerium,
Cerium-activated lutetium aluminum garnet (LAG), europium and / or chromium-activated nitrogen-containing calcium aluminosilicate (CaO-Al 2 O 3 -S
iO 2 ) phosphors, europium-activated silicate ((Sr, Ba) 2 SiO 4 ) phosphors, β sialon phosphors, nitride phosphors such as CASN or SCASN phosphors,
Examples thereof include KSF-based phosphors (K 2 SiF 6 : Mn), sulfide-based phosphors, nanocrystals, and light-emitting substances referred to as quantum dots. As a material of the light emitting material, a semiconductor material, for example, I
I-VI Group, III-V group, IV-VI group semiconductor, specifically, CdSe, CdS x Se 1- x / ZnS core-shell, and highly dispersed nano-sized particles of GaP and the like.

基体1は、フィラー(例えば、拡散剤、着色剤等)を含んでいてもよい。例えば、シリ
カ、酸化チタン、酸化ジルコニウム、酸化マグネシウム、ガラス、蛍光体の結晶又は焼結
体、蛍光体と無機物の結合材との焼結体等が挙げられる。
The substrate 1 may contain a filler (eg, a diffusing agent, a coloring agent, etc.). For example, silica, titanium oxide, zirconium oxide, magnesium oxide, glass, a crystal or sintered body of a phosphor, a sintered body of a phosphor and a binder of an inorganic substance, and the like can be mentioned.

(導電部材)
導電部材3としては、導電性ペースト又は共晶合金を用いることができ、例えば、錫−
ビスマス系、錫−銅系、錫−銀系、金−錫系などの半田、AuとSnとを主成分とする合
金、AuとSiとを主成分とする合金、AuとGeとを主成分とする合金等の共晶合金、
あるいは、銀、金、パラジウムなどの導電性ペースト、又はこれらを組み合わせた材料に
よって形成することができる。実施形態1のように、遮光部材4よりも先に導電部材を形
成する場合、言い換えると、発光素子2間に導電部材を保持させるように形成する場合は
、前述のように、AuSn系の半田を用いることが好ましい。また、実施形態2以降で詳
述するように、遮光部材4を形成した後に導電部材を形成する場合、言い換えると、遮光
部材の凹部に導電部材を形成する場合や、2つの発光素子の電極上に架橋するように、遮
光部材上にわたって一対の導電部材を設ける場合は、比較的低温で硬化可能な導電性ペー
ストを用いることが好ましい。これにより、遮光部材の変色や劣化を抑制し、発光装置の
光取り出し効率を維持することができる。
(Conductive member)
As the conductive member 3, a conductive paste or a eutectic alloy can be used. For example, tin-
Solders such as bismuth-based, tin-copper-based, tin-silver-based, gold-tin-based, alloys containing Au and Sn as main components, alloys containing Au and Si as main components, Au and Ge as main components Eutectic alloys such as alloys
Alternatively, it can be formed of a conductive paste such as silver, gold, palladium or the like, or a material combining them. As described in Embodiment 1, when the conductive member is formed before the light shielding member 4, in other words, when the conductive member is formed to be held between the light emitting elements 2, AuSn solder is used as described above. It is preferable to use Further, as described in detail in the second and subsequent embodiments, when the conductive member is formed after the light shielding member 4 is formed, in other words, when the conductive member is formed in the recess of the light shielding member, or on the electrodes of the two light emitting elements. In the case of providing a pair of conductive members over the light shielding member so as to crosslink, it is preferable to use a conductive paste that can be cured at a relatively low temperature. Thereby, it is possible to suppress the color change or the deterioration of the light shielding member and maintain the light extraction efficiency of the light emitting device.

(遮光部材)
遮光部材4は、例えば、母材である樹脂に光反射性又は光吸収性物質を含有させた材料
により形成することができる。これにより、遮光部材4を所望の形状に成形しやすい。樹
脂としては、例えば、シリコーン樹脂、変成シリコーン樹脂、エポキシ樹脂、変成エポキ
シ樹脂、不飽和ポリエステル樹脂、ポリイミド樹脂、変成ポリイミド樹脂、フェノール樹
脂、ウレタン樹脂、アクリレート樹脂、ユリア樹脂、アクリル樹脂、ポリフタルアミド(
PPA)、ポリフェニレンサルファイド(PPS)、液晶ポリマー(LCP)等が挙げら
れる。これらは単独で又は2種以上の樹脂を組み合わせて用いてもよい。特に、耐熱性、
耐候性の観点から、シリコーン系の樹脂を含むことが好ましい。
なお、遮光部材4の厚みは、例えば10μm〜100μmとすることで、主発光面M以
外からの発光素子の光を十分に遮光しつつ、小型の発光装置を形成することができる。
(Light blocking member)
The light shielding member 4 can be formed of, for example, a material in which a resin as a base material contains a light reflective or light absorbing material. Thereby, the light shielding member 4 can be easily formed into a desired shape. As a resin, for example, silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, unsaturated polyester resin, polyimide resin, modified polyimide resin, phenol resin, urethane resin, acrylate resin, urea resin, acrylic resin, polyphthalamide (
PPA), polyphenylene sulfide (PPS), liquid crystal polymer (LCP) and the like. You may use these individually or in combination of 2 or more types of resin. In particular, heat resistance,
It is preferable to contain a silicone resin from the viewpoint of weather resistance.
When the thickness of the light shielding member 4 is, for example, 10 μm to 100 μm, a small-sized light emitting device can be formed while sufficiently shielding the light of the light emitting element from other than the main light emitting surface M.

光反射性又は光吸収性物質としては、例えば、セラミックス、二酸化チタン、二酸化ケ
イ素、二酸化ジルコニウム、チタン酸カリウム、アルミナ、窒化アルミニウム、窒化ケイ
素、窒化ホウ素、ムライト、酸化ニオブ、酸化亜鉛、硫酸バリウム、各種希土類酸化物(
例えば、酸化イットリウム、酸化ガドリニウム)等が挙げられる。光反射性又は光吸収性
物質は、遮光部材の全重量において、約20重量%〜80重量%程度含有されていること
が好ましく、約30重量%〜70重量%程度がより好ましい。これにより、遮光部材の遮
光性及び強度を確保することができる。
As the light reflective or light absorbing substance, for example, ceramics, titanium dioxide, silicon dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, silicon nitride, boron nitride, mullite, niobium oxide, zinc oxide, barium sulfate, Various rare earth oxides (
For example, yttrium oxide, gadolinium oxide) and the like can be mentioned. The light reflecting or light absorbing substance is preferably contained in an amount of about 20% by weight to about 80% by weight, and more preferably about 30% by weight to about 70% by weight, based on the total weight of the light shielding member. Thereby, the light shielding property and the strength of the light shielding member can be secured.

<実施形態2>
図2Aは、実施形態2の発光装置の製造方法に係る、発光素子を基体上に配置する工程
を示す概略断面図である。図2Bは、実施形態2の発光装置の製造方法に係る、遮光部材
を形成する工程を示す概略平面図である。図2Cは、図2BのX−X’線における概略断
面図である。図2Dは、実施形態2の発光装置の製造方法に係る、導電部材を形成する工
程を示す概略断面図である。図2E及び図2Fは、実施形態2の発光装置の製造方法に係
る、導電部材を切断する工程を示す概略断面図である。なお、図2A〜図2Fでは、一対
の導電部材のうち、1つの導電部材23aのみを図示する。実施形態2の発光装置の製造
方法では、実施形態1と異なり、導電部材を形成する前に、導電部材を設ける位置に一対
の凹部を有する遮光部材を形成する。これにより、導電部材を、所望の領域に容易に形成
することができる。
具体的には、まず、図2Aに示されるように、主発光面Mと、その反対側の面であって
一対の電極2a、2bを有する面と、を備える2つの発光素子2を、電極2a、2bを上
向きにして隣接するように基体1上に配置する。
次に、図2B及び図2Cに示されるように、一方の発光素子2の電極2a、2bから他
方の発光素子2の電極2a、2bにわたる一対の凹部24a、24bを有する遮光部材2
4を形成する。言い換えると、それぞれの発光素子2の電極2a、2bの少なくとも一部
が、凹部を形成する面の一部となるように(凹部内に露出されるように)、遮光部材24
の一対の凹部24a、24bを形成する。
そして、図2Dに示されるように、一対の凹部24a内にそれぞれ導電部材23aを形
成する。
次に、図2Eに示されるように、発光素子2間の一対の導電部材23a及び遮光部材2
4を主発光面Mに対して垂直に交差する方向に切断する。
Second Embodiment
FIG. 2A is a schematic cross-sectional view showing a step of arranging a light emitting element on a base according to a method of manufacturing a light emitting device of Embodiment 2. FIG. 2B is a schematic plan view showing a step of forming a light shielding member according to the method of manufacturing a light emitting device of Embodiment 2. FIG. 2C is a schematic cross-sectional view taken along line XX ′ of FIG. 2B. FIG. 2D is a schematic cross-sectional view showing the step of forming a conductive member according to the method of manufacturing a light emitting device of Embodiment 2. 2E and 2F are schematic cross-sectional views showing steps of cutting a conductive member according to the method of manufacturing a light emitting device of Embodiment 2. FIG. 2A to 2F, only one conductive member 23a of the pair of conductive members is illustrated. In the method of manufacturing the light emitting device according to the second embodiment, unlike the first embodiment, before forming the conductive member, the light shielding member having the pair of concave portions is formed at the position where the conductive member is provided. Thereby, the conductive member can be easily formed in the desired area.
Specifically, first, as shown in FIG. 2A, two light emitting elements 2 each having a main light emitting surface M and a surface opposite to the main light emitting surface M and having a pair of electrodes 2a and 2b, It arrange | positions on the base | substrate 1 so that 2a, 2b may face up and it adjoins.
Next, as shown in FIGS. 2B and 2C, a light shielding member 2 having a pair of concave portions 24a and 24b extending from the electrodes 2a and 2b of one light emitting element 2 to the electrodes 2a and 2b of the other light emitting element 2.
Form 4 In other words, the light shielding member 24 is arranged such that at least a part of the electrodes 2a and 2b of each light emitting element 2 is a part of the surface forming the recess (so that it is exposed in the recess).
A pair of recesses 24a, 24b are formed.
Then, as shown in FIG. 2D, the conductive members 23a are formed in the pair of recesses 24a.
Next, as shown in FIG. 2E, the pair of conductive members 23a between the light emitting elements 2 and the light shielding member 2
4 is cut in a direction perpendicular to the main light emitting surface M;

実施形態2では、凹部24a、24bを有する遮光部材24は、例えば、所望の凹部を
形成可能な凸形状を有する金型を用いて形成することができる。金型を用いることで、凹
部を所望の領域まで形成しやすく、発光素子2間において導電部材が形成される凹部24
a、24bと発光素子2の側面との間に遮光部材24を存在させることができる。したが
って、発光素子2の半導体層まで達する深さの凹部24a、24bを形成し、発光装置の
実装面から露出する導電部材3a、3bの面積を広くして放熱性や実装性を確保しつつ、
短絡や光吸収が起こりにくい信頼性の高い発光装置を形成することが可能である。
In the second embodiment, the light shielding member 24 having the concave portions 24 a and 24 b can be formed, for example, using a mold having a convex shape capable of forming a desired concave portion. By using a mold, it is easy to form a recess to a desired region, and a recess 24 in which a conductive member is formed between light emitting elements 2
The light shielding member 24 can be present between the light source 24 a and the side surface of the light emitting element 2. Therefore, the concave portions 24a and 24b having a depth reaching the semiconductor layer of the light emitting element 2 are formed, and the area of the conductive members 3a and 3b exposed from the mounting surface of the light emitting device is increased to secure heat dissipation and mounting properties.
It is possible to form a highly reliable light-emitting device in which a short circuit or light absorption does not easily occur.

一対の凹部24a、24bの底面は、少なくとも電極2a、2bの上面が露出する深さ
まで設けることが好ましい。特に、発光素子間2の遮光部材24の凹部の底面は、電極2
a、2bの上面よりも下側まで設けることが好ましい。これにより、発光装置の実装面か
ら露出する導電部材3a、3bの面積を大きくできる。なお、発光素子2間の凹部24a
、24bの底面は、発光素子2の主発光面Mよりも上側までの深さで設けられることが好
ましい。これにより、導電部材を主発光面Mと同一面上に露出しないように形成でき、光
吸収の少ない発光装置を形成しやすい。
The bottom surfaces of the pair of recesses 24a and 24b are preferably provided to a depth at which at least the upper surfaces of the electrodes 2a and 2b are exposed. In particular, the bottom surface of the recess of the light shielding member 24 between the light emitting elements 2
It is preferable to provide below the upper surface of a and 2b. Thereby, the area of the conductive members 3a and 3b exposed from the mounting surface of the light emitting device can be increased. In addition, the recess 24 a between the light emitting elements 2
Preferably, the bottom surface of 24 b is provided at a depth to the upper side than the main light emitting surface M of the light emitting element 2. Thus, the conductive member can be formed so as not to be exposed on the same plane as the main light emitting surface M, and a light emitting device with less light absorption can be easily formed.

実施形態2では、図2Cに示されるように、1つの凹部内で深さが異なる凹部24aを
形成することができる。実施形態2の凹部24a、24bは、その底面が一対の電極2a
、2b上において電極の上面が露出する深さで設けられ(以降、浅い凹部24qと記載す
ることがある)、発光素子2間において電極の上面よりも下側まで、且つ、主発光面Mよ
りも上側までの深さ(以降、深い凹部24sと記載することがある)で設けられる。すな
わち、段差を有する凹部を形成することができる。このような凹部24a、24bを形成
すると、発光素子間に一対の導電部材を架橋させつつ、深い凹部24sによって発光装置
の実装面Sから露出する導電部材の面積を大きく確保することができる。
なお、浅い凹部24qの深さは、例えば30μm〜100μmとすることができる。そ
うすることで、凹部に導電部材を形成したときに、導電部材が凹部の外へ溢れにくい。ま
た、深い凹部24s(浅い凹部からさらに凹んでいる部分の深さ)は、例えば30μm〜
100μmとすることができる。そうすることで、発光装置の実装面から十分な面積の導
電部材を露出させやすい。
In Embodiment 2, as shown in FIG. 2C, recesses 24a having different depths can be formed in one recess. The bottoms of the concave portions 24 a and 24 b of the second embodiment have a pair of electrodes 2 a.
, And 2b on the upper surface of the electrode (hereinafter, may be referred to as a shallow recess 24q), and between the light emitting elements 2 to the lower side of the upper surface of the electrode and from the main light emitting surface M It is provided by the depth to the upper side (it may describe as deep crevice 24s hereafter). That is, the recessed part which has a level | step difference can be formed. By forming such concave portions 24a and 24b, it is possible to secure a large area of the conductive member exposed from the mounting surface S of the light emitting device by the deep concave portions 24s while bridging the pair of conductive members between the light emitting elements.
The depth of the shallow recess 24 q can be, for example, 30 μm to 100 μm. By doing so, when the conductive member is formed in the recess, the conductive member is unlikely to overflow out of the recess. Also, the deep recess 24s (the depth of the portion further recessed from the shallow recess) is, for example, 30 μm to
It can be 100 μm. By doing so, the conductive member having a sufficient area can be easily exposed from the mounting surface of the light emitting device.

なお、凹部24a、24bの形成領域は、以下のように設定することが好ましい。凹部
24a、24bは、発光素子2の配列方向において、少なくとも凹部を架橋させる電極と
電極の対向する側面よりも外側まで、より好ましくは、凹部を架橋させる電極の上面から
上面まで設けることが好ましい。これにより、導電部材と電極2a、2bとの接触面積を
十分に確保することができ、放熱性のよい発光装置を形成しやすい。なお、発光素子2間
の深い凹部24sは、発光素子2の配列方向において、隣接する発光素子2の側面が露出
しないように形成することが好ましい。これにより、導電部材23と発光素子2の間に遮
光部材24を存在させることができ、短絡が発生しにくく、導電部材による光吸収の少な
い発光装置を形成しやすい。なお、凹部24a、24bは、図2Bに示されるように、他
方の凹部と離間して形成することが好ましい。例えば、一方の凹部と他方の凹部を100
μm〜150μm離間させて形成することが好ましい。これにより、一対の凹部24a、
24bに形成される一対の導電部材を絶縁させることができる。また、凹部24a、24
bは、後の個片化工程において切断される発光素子2の側面に平行な切断面のうち、発光
装置の側面となる面よりも外側まで形成してもよい。これにより、発光装置の側面からも
導電部材を露出させることができ、発光装置と実装基板との接合強度を高めることができ
る。なお、凹部24a、24bは、後の個片化工程において切断される発光素子2の側面
に平行な切断面のうち、発光装置の上面となる面よりも内側に形成することが好ましい。
これにより、実装基板に実装する際の接着剤による光吸収が少ない発光装置を形成しやす
い。
In addition, it is preferable to set the formation area of recessed part 24a, 24b as follows. The recesses 24 a and 24 b are preferably provided from the upper surface to the upper surface of the electrode for crosslinking the recess, more preferably to the outside of the electrode facing the recess and the opposite side of the electrode in the arrangement direction of the light emitting elements 2. As a result, the contact area between the conductive member and the electrodes 2a and 2b can be sufficiently secured, and a light emitting device with good heat dissipation can be easily formed. Preferably, the deep recesses 24s between the light emitting elements 2 are formed so that the side surfaces of the adjacent light emitting elements 2 are not exposed in the arrangement direction of the light emitting elements 2. Thus, the light shielding member 24 can be present between the conductive member 23 and the light emitting element 2, and a short circuit is unlikely to occur, and a light emitting device with less light absorption by the conductive member can be easily formed. The recesses 24a and 24b are preferably formed separately from the other recess as shown in FIG. 2B. For example, one recess and the other recess
It is preferable to form at intervals of μm to 150 μm. Thereby, a pair of recessed part 24a,
The pair of conductive members formed in 24b can be insulated. Also, the recesses 24a, 24
b may be formed to the outside of the side surface of the light emitting device among the cut surfaces parallel to the side surface of the light emitting element 2 to be cut in the subsequent singulation step. Thus, the conductive member can be exposed also from the side surface of the light emitting device, and the bonding strength between the light emitting device and the mounting substrate can be increased. The recesses 24a and 24b are preferably formed on the inner side of the surface to be the upper surface of the light emitting device among cut surfaces parallel to the side surfaces of the light emitting element 2 to be cut in the subsequent singulation process.
Accordingly, it is easy to form a light emitting device with less light absorption by the adhesive when mounting on a mounting substrate.

なお、凹部24a、24bは前述のように1つの凹部内で深さが異なっていなくてもよ
く、均一な深さで形成されていてもよい。例えば、電極の上面までの深さの一対の凹部を
形成することができる。これにより、複雑な形状の金型を用いなくてもよいので、コスト
を削減することができる。また、凹部24a、24bを、後に切断される発光素子2の側
面に平行な切断面のうち、発光装置の上面となる面よりも外側まで形成し、発光装置の上
面からも導電部材23が露出するように形成してもよい。この形態については、実施形態
5で詳述する。
The recesses 24a and 24b may not have different depths in one recess as described above, and may be formed with a uniform depth. For example, a pair of recesses with a depth to the top surface of the electrode can be formed. By this, it is not necessary to use a mold having a complicated shape, and thus the cost can be reduced. Further, the concave portions 24a and 24b are formed to the outside of the surface to be the upper surface of the light emitting device among the cut surfaces parallel to the side surface of the light emitting element 2 to be cut later, and the conductive member 23 is exposed also from the upper surface It may be formed to This form will be described in detail in the fifth embodiment.

図2Bに示されるように、導電部材が形成される凹部24a、24bは、平面視で矩形
状に形成することができる。また、導電部材が形成される凹部24a、24bを、平面視
で発光素子間において幅広になる形状に形成してもよい。例えば、凹部24a、24bの
平面形状は、円形、楕円形、六角形等に形成してもよい。この場合、後の工程で、発光素
子間の一対の導電部材の幅広部分及び遮光部材を主発光面に対して垂直に切断することで
、実装面に向かって幅広の導電部材を有する発光装置を形成することができる。これによ
り、発光装置の放熱性を向上させやすい。なお、このように平面視で比較的複雑な形状の
凹部であっても、実施形態2のように金型を用いれば、容易に形成することができる。
As shown in FIG. 2B, the recesses 24a and 24b in which the conductive members are formed can be formed in a rectangular shape in plan view. In addition, the concave portions 24a and 24b in which the conductive members are formed may be formed in a shape that becomes wider between the light emitting elements in a plan view. For example, the planar shape of the recesses 24a and 24b may be circular, elliptical, hexagonal or the like. In this case, the light emitting device having a wide conductive member toward the mounting surface is obtained by cutting the wide portions of the pair of conductive members between the light emitting elements and the light shielding member perpendicularly to the main light emitting surface in a later step. It can be formed. Thereby, it is easy to improve the heat dissipation of the light emitting device. In addition, even if it is a recessed part of a comparatively complicated shape by planar view in this way, if a metal mold | die is used like Embodiment 2, it can form easily.

実施形態2では、導電部材23を凹部24a、24bに形成するので、導電部材23の
材料、粘度、形成方法は自由に選択することができる。特に、Agペースト等の導電性ペ
ーストを用いてポッティングによって形成することが好ましい。Agペースト等の導電性
ペーストは、半田等に比べて比較的溶融温度が低いため、実施形態2のように、導電部材
よりも先に遮光部材を形成する場合でも、遮光部材の変色や劣化を抑制して導電部材23
を形成することができる。また、導電部材23をポッティングで形成することで、深い凹
部24s、浅い凹部24qへ段階的に供給しやすく、凹部へ隙間なく導電部材23を充填
することができる。なお、印刷法によれば、密に形成された凹部へ効率よく導電部材23
を形成することができる。
In the second embodiment, since the conductive member 23 is formed in the concave portions 24a and 24b, the material, the viscosity, and the forming method of the conductive member 23 can be freely selected. In particular, it is preferable to form by potting using a conductive paste such as Ag paste. The conductive paste such as Ag paste has a relatively low melting temperature compared to solder etc. Therefore, even when the light shielding member is formed prior to the conductive member as in the second embodiment, the discoloration or deterioration of the light shielding member Restrain the conductive member 23
Can be formed. Further, by forming the conductive member 23 by potting, the conductive member 23 can be easily supplied stepwise to the deep recess 24s and the shallow recess 24q, and the conductive member 23 can be filled into the recess without a gap. In addition, according to the printing method, the conductive member 23 can be efficiently made to the concave portion formed densely.
Can be formed.

実施形態2では、図2Fに示されるように、発光装置20の実装面S及び背面U(製造
工程における上面側)から、一対の導電部材23aを露出させることができる。これによ
り、発光装置20の放熱性、実装性を向上させることができる。なお、背面U上にさらに
遮光部材を形成し、遮光部材に挟まれた一対の導電部材を切断することで、発光装置を形
成してもよい。これにより、一対の導電部材を保護しつつ、個々の発光装置20に個片化
することができる。
上述した工程以外は、実質的に実施形態1と同様の工程を行うことができるため、詳細
な説明は省略する。
In the second embodiment, as shown in FIG. 2F, the pair of conductive members 23a can be exposed from the mounting surface S and the back surface U (upper surface side in the manufacturing process) of the light emitting device 20. Thereby, the heat dissipation and the mountability of the light emitting device 20 can be improved. In addition, a light shielding member may be further formed on the back surface U, and the light emitting device may be formed by cutting a pair of conductive members sandwiched between the light shielding members. Thereby, the individual light emitting devices 20 can be singulated while protecting the pair of conductive members.
The steps other than the above-described steps can be substantially the same as in the first embodiment, and thus detailed description will be omitted.

なお、一対の凹部は、実施形態2のように金型の凸形状によって形成する他、例えば、
発光素子2を被覆するように遮光部材を設けた後、遮光部材の一部を除去することで形成
してもよい。この形態については、実施形態3で詳述する。
The pair of concave portions are formed by the convex shape of the mold as in the second embodiment, for example,
After providing the light shielding member so as to cover the light emitting element 2, the light shielding member may be formed by removing a part of the light shielding member. This form will be described in detail in the third embodiment.

<実施形態3>
図3A〜図3Dは、実施形態3の発光装置の製造方法に係る、遮光部材の凹部を形成す
る工程を示す概略断面図である。図3Eは、実施形態3の発光装置の製造方法に係る、導
電部材を形成する工程を示す概略断面図である。図3Fは、実施形態3の発光装置の製造
方法に係る、導電部材を切断する工程を示す概略断面図である。実施形態3の発光装置3
0の製造方法では、遮光部材34の一対の凹部の形成方法が、実施形態2と異なる。なお
、図3A〜図3Fでは、一対の凹部のうち、1つの凹部34aのみを図示する。また、一
対の導電部材のうち、1つの導電部材33aのみを図示する。
実施形態3では、まず、実施形態1,2と同様に、基体1上に2つの発光素子2を隣接
するように配置する。
そして、図3Aに示されるように、少なくとも発光素子2間を被覆する遮光部材34を
一体に設ける。
その後、図3Bに示されるように、適宜ハーフダイシング、マスクを用いたエッチング
等の公知の方法で遮光部材34の一部を除去することで、凹部34aを形成する。特に、
汎用性や加工精度の観点から、ハーフダイシングで凹部34aを形成することが好ましい
Embodiment 3
3A to 3D are schematic cross-sectional views showing the process of forming the recess of the light shielding member according to the method of manufacturing the light emitting device of the third embodiment. FIG. 3E is a schematic cross-sectional view showing the step of forming a conductive member according to the method of manufacturing a light emitting device of Embodiment 3. FIG. 3F is a schematic cross-sectional view showing a step of cutting a conductive member according to the method of manufacturing a light emitting device of Embodiment 3. Light emitting device 3 of Embodiment 3
In the manufacturing method of 0, the method of forming the pair of concave portions of the light shielding member 34 is different from that of the second embodiment. In addition, in FIG. 3A-FIG. 3F, only one recessed part 34a is illustrated in figure among a pair of recessed parts. Further, only one conductive member 33a is illustrated among the pair of conductive members.
In the third embodiment, first, as in the first and second embodiments, two light emitting elements 2 are disposed on the base 1 so as to be adjacent to each other.
Then, as shown in FIG. 3A, a light shielding member 34 covering at least the light emitting elements 2 is integrally provided.
Thereafter, as shown in FIG. 3B, the recess 34a is formed by removing a part of the light shielding member 34 by a known method such as half dicing or etching using a mask as appropriate. In particular,
In terms of versatility and processing accuracy, it is preferable to form the recess 34 a by half dicing.

具体的には、遮光部材を、トランスファーモールド、コンプレッションモールド、スク
リーン印刷、ポッティング等で、基体1上に配置された2つの発光素子2を埋設するよう
に、一対の電極2a、2bの上面よりも高い位置まで設ける。そして、所望の凹部が形成
可能な形状、太さのブレードで、導電部材を架橋させる電極の上面を被覆する遮光部材と
、その間の遮光部材とが連続的に除去されるようにハーフダイシングする。または、導電
部材を架橋させる電極の上面を被覆する遮光部材及び導電部材の一部と、その間の遮光部
材とが連続的に除去されるようにハーフダイシングする。ハーフダイシングは、例えば発
光素子2の電極2a、2bの下面よりも上側まで行われることが好ましい。これにより、
発光素子2を損傷させることなく遮光部材及び電極の一部を除去し、凹部34aを形成す
ることができる。
Specifically, the light shielding member is formed by transfer molding, compression molding, screen printing, potting, etc., so that the two light emitting elements 2 disposed on the substrate 1 are embedded, as compared to the upper surfaces of the pair of electrodes 2a and 2b. Set up to a high position. Then, with a blade having a shape and a thickness that can form a desired concave portion, half-dicing is performed so that the light shielding member covering the upper surface of the electrode for crosslinking the conductive member and the light shielding member therebetween are continuously removed. Alternatively, half dicing is performed so that the light shielding member covering the upper surface of the electrode for crosslinking the conductive member and a part of the conductive member and the light shielding member therebetween are continuously removed. Half dicing is preferably performed to the upper side of the lower surfaces of the electrodes 2a and 2b of the light emitting element 2, for example. By this,
A part of the light blocking member and the electrode can be removed without damaging the light emitting element 2 to form the recess 34 a.

なお、太さの異なるブレードを用い、実施形態3と同様に浅い凹部34qと深い凹部3
4sからなる凹部34aを設けてもよい。例えば、図3A及び図3Bに示されるように、
太いブレード5aによって、2つの発光素子の電極2a、2bの上面から上面までの幅で
あって、且つ、電極2a、2bの上面から下面のいずれかまでの深さで設けられる浅い凹
部34qを形成することができる。また、図3C及び図3Dに示されるように、細いブレ
ード5bによって、発光素子2間において、発光素子2の側面まで至らない幅で、浅い凹
部34qの底面から主発光面Mよりも上側までの深さで設けられる深い凹部34sを形成
することができる。なお、浅い凹部34qと深い凹部34sを形成する順番は特に限定さ
れず、深い凹部34sを形成してから浅い凹部34qを形成してもよい。
As in the third embodiment, the shallow recesses 34 q and the deep recesses 3 are used as in the third embodiment by using blades having different thicknesses.
You may provide the recessed part 34a which consists of 4s. For example, as shown in FIGS. 3A and 3B:
The thick blade 5a forms a shallow recess 34q having a width from the upper surface to the upper surface of the electrodes 2a and 2b of the two light emitting elements, and a depth from the upper surface to the lower surface of the electrodes 2a and 2b. can do. In addition, as shown in FIGS. 3C and 3D, the width from the bottom surface of the shallow recess 34q to the upper side of the main light emitting surface M with a width that does not reach the side surface of the light emitting element 2 between the light emitting elements 2 It is possible to form a deep recess 34s provided at a depth. The order in which the shallow recesses 34 q and the deep recesses 34 s are formed is not particularly limited, and the shallow recesses 34 q may be formed after the deep recesses 34 s are formed.

上述した工程以外は、実質的に実施形態2と同様の工程を行うことができる。具体的に
は、図3Eに示されるように、導電部材34aを形成し、図3Fに示されるように、個々
の発光装置30に個片化する。なお、前述のように、導電部材及び遮光部材の上面(発光
装置の背面U)上にさらに遮光部材を形成し、遮光部材に挟まれた一対の導電部材を切断
することで、発光装置を形成してもよい。これにより、一対の導電部材を保護しつつ、個
々の発光装置に個片化することができる。
Except for the above-described steps, substantially the same steps as those in Embodiment 2 can be performed. Specifically, as shown in FIG. 3E, the conductive members 34a are formed, and as shown in FIG. 3F, the light emitting devices 30 are singulated. As described above, a light shielding member is further formed on the upper surface (the rear surface U of the light emitting device) of the conductive member and the light shielding member, and the light emitting device is formed by cutting a pair of conductive members sandwiched between the light shielding members. You may Thus, the light emitting devices can be singulated while protecting the pair of conductive members.

以上のように、実施形態3の発光装置の製造方法によれば、ブレードの太さや形状、ハ
ーフダイシングの深さ等を制御することで、複雑な形状の金型を用いることなく、容易に
所望の凹部を有する遮光部材34を形成することができる。したがって、コストを削減し
つつ、所望の領域に精度よく導電部材を形成することができる。
As described above, according to the method of manufacturing a light emitting device of Embodiment 3, the thickness and shape of the blade, the depth of half dicing, and the like are controlled to easily achieve the desired shape without using a mold having a complicated shape. It is possible to form a light shielding member 34 having a concave portion. Therefore, the conductive member can be formed precisely in the desired area while reducing the cost.

<実施形態4>
図4A及び図4Bは、実施形態4の発光装置の製造方法に係る、第1の遮光部材を形成
する工程を示す概略断面図である。図4Cは、実施形態4の発光装置の製造方法に係る導
電部材を形成する工程を示す概略断面図である。なお、図4Cは、図5のX−X’線にお
ける概略断面図である。図4D及び図4Eは、実施形態4の発光装置の製造方法に係る、
第2の遮光部材を形成する工程を示す概略断面図である。図4F及び図4Gは、実施形態
4の発光装置の製造方法に係る、導電部材を切断する工程を示す概略断面図である。なお
、図4A〜図4Gでは、一対の導電部材のうち、1つの導電部材43aのみを図示する。
実施形態4の発光装置の製造方法では、遮光部材を複数回に分けて形成する点で、実施形
態1〜3と異なる。
実施形態4では、まず、図4Bに示されるように、主発光面Mと、主発光面Mと反対側
であって一対の電極2a、2bを有する面と、を有する2つの発光素子2を、電極2a、
2bを上向きにして隣接するように基体1上に配置する。
次に一対の電極2a、2bの上面が露出するように、少なくとも発光素子間を被覆する
第1の遮光部材44aを形成する。第1の遮光部材44aは、例えば図4Aに示されるよ
うに、基体1上に配置した2つの発光素子2を一体に被覆する遮光部材を形成し、一対の
電極2a、2bが露出するように切削・研磨等で遮光部材(及び導電部材)の一部を除去
することで形成することができる。
次に、図4Cに示されるように、一方の発光素子2の電極2a、2bから他方の発光素
子2の電極2a、2bにわたる一対の導電部材43aを形成する。このとき、それぞれの
導電部材43aは、一方の発光素子2の電極上から、発光素子2間の第1の遮光部材44
a上、他方の発光素子2の電極上へ連続的に形成する。
次に、図4Eに示されるように、一対の導電部材43a及び第1の遮光部材44aを被
覆する第2の遮光部材44bを形成する。より詳細には、第1の遮光部材44a及び電極
2a、2bの上面に、少なくとも導電部材43aの側面を被覆する第2の遮光部材44b
を形成する。第2の遮光部材44bは、例えば図4Dに示されるように、導電部材43a
の上面よりも高い位置まで遮光部材を設け、導電部材43aの上面が露出するように、そ
の一部を切削・研磨等で除去することで形成することができる。これにより、発光装置4
0の背面Uからも一対の導電部材43aを露出させることができる。
そして、少なくとも発光素子2間の第1の遮光部材44a及び一対の導電部材43を、
主発光面Mに対して垂直に切断し、個片化することで、発光装置40を形成することがで
きる。なお、導電部材43の上面が第2の遮光部材44bに被覆された状態で、発光素子
2間の第1の遮光部材44a及び第2の遮光部材44bで挟まれた一対の導電部材43a
を主発光面Mに対して垂直に切断してもよい。これにより、一対の導電部材を保護しつつ
、個々の発光装置40に個片化することができる。
上述した工程以外は、実質的に実施形態1と同様の工程を行うことができる。
Fourth Embodiment
4A and 4B are schematic cross-sectional views showing steps of forming a first light shielding member according to the method of manufacturing a light emitting device of the fourth embodiment. FIG. 4C is a schematic cross-sectional view showing the step of forming a conductive member according to the method of manufacturing a light emitting device of Embodiment 4. 4C is a schematic cross-sectional view taken along the line XX 'in FIG. 4D and 4E relate to the method of manufacturing the light emitting device of Embodiment 4.
It is a schematic sectional drawing which shows the process of forming a 2nd light-shielding member. 4F and 4G are schematic cross-sectional views showing steps of cutting a conductive member according to the method of manufacturing a light emitting device of the fourth embodiment. 4A to 4G, only one conductive member 43a is illustrated among the pair of conductive members.
The method of manufacturing the light emitting device of the fourth embodiment is different from the first to third embodiments in that the light shielding member is formed a plurality of times separately.
In the fourth embodiment, first, as shown in FIG. 4B, two light emitting elements 2 each having a main light emitting surface M and a surface opposite to the main light emitting surface M and having a pair of electrodes 2a and 2b are provided. , Electrode 2a,
It arrange | positions on the base | substrate 1 so that 2b may be upward and adjacent.
Next, a first light shielding member 44a that covers at least the space between the light emitting elements is formed so that the upper surfaces of the pair of electrodes 2a and 2b are exposed. For example, as shown in FIG. 4A, the first light shielding member 44a forms a light shielding member that integrally covers the two light emitting elements 2 disposed on the base 1 so that the pair of electrodes 2a and 2b are exposed. It can be formed by removing a part of the light shielding member (and the conductive member) by cutting, polishing or the like.
Next, as shown in FIG. 4C, a pair of conductive members 43a is formed from the electrodes 2a and 2b of one light emitting element 2 to the electrodes 2a and 2b of the other light emitting element 2. At this time, each of the conductive members 43 a is the first light shielding member 44 between the light emitting elements 2 on the electrode of one of the light emitting elements 2.
a) It forms continuously on the electrode of the other light emitting element 2 on a.
Next, as shown in FIG. 4E, a second light shielding member 44b that covers the pair of conductive members 43a and the first light shielding member 44a is formed. More specifically, the second light shielding member 44b covers at least the side surface of the conductive member 43a on the upper surfaces of the first light shielding member 44a and the electrodes 2a and 2b.
Form The second light blocking member 44b is, for example, as shown in FIG. 4D, a conductive member 43a.
The light shielding member is provided to a position higher than the upper surface of the conductive layer 43, and a part of the light shielding member is removed by cutting, polishing or the like so that the upper surface of the conductive member 43a is exposed. Thereby, the light emitting device 4
The pair of conductive members 43a can also be exposed from the back surface U of zero.
Then, at least the first light shielding member 44 a and the pair of conductive members 43 between the light emitting elements 2,
The light emitting device 40 can be formed by cutting perpendicularly to the main light emitting surface M and separating into pieces. When the upper surface of the conductive member 43 is covered by the second light shielding member 44b, the pair of conductive members 43a sandwiched between the first light shielding member 44a and the second light shielding member 44b between the light emitting elements 2
May be cut perpendicularly to the main light emitting surface M. Thereby, the individual light emitting devices 40 can be singulated while protecting the pair of conductive members.
Except for the above-described steps, substantially the same steps as those of Embodiment 1 can be performed.

このような発光装置の製造方法によって、複雑な形状の金型や、ハーフダイシングによ
る高い加工精度を要さずに、容易に所望の領域に一対の導電部材を形成しやすい。
With such a light emitting device manufacturing method, it is easy to easily form a pair of conductive members in a desired region without requiring a mold having a complicated shape or high processing accuracy by half dicing.

図5は、図4Cの概略平面図である。実施形態4では、半田等の導電部材43(43a
、43b)を、金属からなる発光素子2の電極2a、2b上を架橋するように、電極2a
、2b及び発光素子2間の第1の遮光部材44a上に連続するように配置する。樹脂を母
材とする第1の遮光部材44a上は、金属に比べて半田等の導電部材43a、43bが濡
れにくいので、導電性ペーストを用いてマスク印刷で形成すると、第1の遮光部材44a
上にも連続的に導電部材43を形成しやすく好ましい。実施形態4では、図5に示される
ように、第1の遮光部材44a上の導電部材43a、43bの幅が、電極2a、2b上の
導電部材43a、43bの幅に比べて細く形成されることがある。これにより、発光装置
40の実装面Sにおいてそれぞれの導電部材43a、43bの間隔を十分に確保すること
ができ、実装基板へ実装した際の発光装置40の短絡を防止することができる。
FIG. 5 is a schematic plan view of FIG. 4C. In the fourth embodiment, the conductive member 43 (43a
, 43b) to bridge the electrodes 2a and 2b of the light emitting element 2 made of metal.
, 2b and the first light blocking member 44a between the light emitting elements 2 are arranged continuously. The conductive members 43a and 43b such as solder are less likely to get wet on the first light shielding member 44a made of resin as a base material, and therefore, when formed by mask printing using a conductive paste, the first light shielding member 44a
It is preferable that the conductive member 43 be continuously formed on the upper side. In the fourth embodiment, as shown in FIG. 5, the width of the conductive members 43a and 43b on the first light shielding member 44a is smaller than the width of the conductive members 43a and 43b on the electrodes 2a and 2b. Sometimes. Thereby, the space between the conductive members 43a and 43b can be sufficiently secured on the mounting surface S of the light emitting device 40, and a short circuit of the light emitting device 40 when mounted on the mounting substrate can be prevented.

<実施形態5>
図6A及び図6Bは、本発明の実施形態5の発光装置の製造方法を説明する概略平面図
である。実施形態5は、3つ以上の発光素子2を一組として、それらの発光素子2の電極
上にわたる一対の導電部材53(53a、53b)を形成する点で、実施形態1〜4と異
なる。
Fifth Embodiment
6A and 6B are schematic plan views illustrating a method of manufacturing a light emitting device according to Embodiment 5 of the present invention. The fifth embodiment differs from the first to fourth embodiments in that a pair of three or more light emitting elements 2 is formed as a pair to form a pair of conductive members 53 (53 a, 53 b) extending over the electrodes of the light emitting elements 2.

例えば、図6Aに示されるように、3つ以上の発光素子2(図中では4つ)を一組とし
て、電極2a、2bが上向きになるように基体1上に列方向に配置し、隣接する各発光素
子の電極上に連続するように一対の導電部材53(53a、53b)を形成する。
そして、発光素子2及び導電部材53を被覆する遮光部材を形成し、少なくとも各発光
素子2間の一対の導電部材53及び遮光部材を主発光面Mに垂直な方向に切断することで
、実装面Sから一対の導電部材53が露出するサイドビュー型の発光装置に個片化するこ
とができる。
実施形態5では、例えば図6Aの一点破線で示される位置で切断することで、実装面S
と反対側の発光装置の上面からも一対の導電部材を露出させることができ、上面、下面の
いずれかを実装面として自由に選択可能な発光装置を形成することができる。この場合、
発光装置の上面と下面のうち、主発光面に対して正負の端子(正負の電極に接続するそれ
ぞれの導電部材53a、53b)の左右の位置が同じとなる面を実装面として選択できる
ので、2つの発光素子2を基体1上に配置する際に、それぞれの発光素子2の同極同士が
隣接(対向)するように配置してもよい。
For example, as shown in FIG. 6A, three or more light emitting elements 2 (four in the figure) are arranged in a row direction on the substrate 1 so that the electrodes 2a and 2b face upward, as one set, and adjacent A pair of conductive members 53 (53a, 53b) are formed to be continuous on the electrodes of the light emitting elements.
Then, a light shielding member covering the light emitting element 2 and the conductive member 53 is formed, and the pair of conductive members 53 and the light shielding member between at least the light emitting elements 2 are cut in the direction perpendicular to the main light emitting surface M. The light emitting device can be singulated into a side view type light emitting device in which the pair of conductive members 53 are exposed from S.
In the fifth embodiment, for example, the mounting surface S is obtained by cutting at a position indicated by a dashed line in FIG. 6A.
The pair of conductive members can also be exposed from the upper surface of the light emitting device on the opposite side, and a freely selectable light emitting device can be formed with either the upper surface or the lower surface as the mounting surface. in this case,
Among the upper and lower surfaces of the light emitting device, the mounting surface can be selected as the surface on which the left and right positions of the positive and negative terminals (the conductive members 53a and 53b connected to the positive and negative electrodes) are the same as the main light emitting surface. When disposing the two light emitting elements 2 on the substrate 1, the same poles of the respective light emitting elements 2 may be disposed so as to be adjacent (opposite) to each other.

また、図6Bに示されるように、例えば、隣り合う行(又は列)の一方の行(又は列)
の発光素子2の一対の電極と、他方の行(又は列)の発光素子2の一対の電極とが対向す
るように、発光素子2を基体1上に配置し、隣り合う4つの発光素子の対向する4つの電
極上にわたる導電部材53cを形成する。
そして、発光素子2間の導電部材53c及び遮光部材を主発光面に垂直に(図中の一点
破線で示される位置で)切断することで、発光装置の実装面及び側面から導電部材が露出
する発光装置を形成することができる。これにより、放熱性、実装性が高い発光装置を形
成しやすい。
Also, as shown in FIG. 6B, for example, one row (or column) of adjacent rows (or columns)
The light emitting elements 2 are disposed on the base 1 so that the pair of electrodes of the light emitting element 2 and the pair of electrodes of the light emitting elements 2 in the other row (or column) face each other. A conductive member 53c is formed over the four opposing electrodes.
Then, the conductive member is exposed from the mounting surface and the side surface of the light emitting device by cutting the conductive member 53c between the light emitting elements 2 and the light shielding member perpendicularly to the main light emitting surface (at the position indicated by the dashed line in the figure). A light emitting device can be formed. Accordingly, it is easy to form a light emitting device with high heat dissipation and high mountability.

なお、実施形態5では、遮光部材よりも先に導電部材53a、53b、53cを形成す
る形態を示したが、これに限らず、3つ以上の発光素子2の電極上にわたる一対の凹部を
有する遮光部材を形成し、凹部に導電部材を形成してもよい。これにより、発光素子の電
極上の所望の領域に、精度よく導電部材を形成しやすい。
In the fifth embodiment, the conductive members 53a, 53b, and 53c are formed earlier than the light shielding member. However, the present invention is not limited thereto, and a pair of recesses extending over the electrodes of three or more light emitting elements 2 is provided. A light shielding member may be formed, and a conductive member may be formed in the recess. Thus, the conductive member can be easily formed in a desired area on the electrode of the light emitting element with high accuracy.

本発明の実施形態に係る発光装置は、照明用光源、各種インジケーター用光源、車載用
光源、ディスプレイ用光源、液晶のバックライト用光源、センサー用光源、信号機等、種
々の発光装置に使用することができる。
The light emitting device according to the embodiment of the present invention may be used for various light emitting devices such as illumination light sources, light sources for various indicators, light sources for vehicles, light sources for displays, light sources for backlight of liquid crystals, light sources for sensors, and traffic lights. Can.

1 基体
2 発光素子
2a、2b 電極
3(3a、3b)、23a、43(43a、43b)、53(53a、53b)、53
c 導電部材
4、24、34、44 遮光部材
44a 第1の遮光部材
44b 第2の遮光部材
24a、24b、34a 凹部
24q、34q 浅い凹部
24s、34s 深い凹部
5、5a、5b ブレード
6 実装基板
7 波長変換層
8 透光層
9 端子被覆膜
10、20、30、40 発光装置
DESCRIPTION OF SYMBOLS 1 base 2 light emitting element 2a, 2b electrode 3 (3a, 3b), 23a, 43 (43a, 43b), 53 (53a, 53b), 53
c Conductive member 4, 24, 34, 44 Light shielding member 44a First light shielding member 44b Second light shielding member 24a, 24b, 34a Recess 24q, 34q Shallow recess 24s, 34s Deep recess 5, 5a, 5b Blade 6 Mounting substrate 7 Wavelength conversion layer 8 Light transmission layer 9 Terminal coating film 10, 20, 30, 40 Light emitting device

Claims (9)

光出射面と、前記光出射面の反対側に位置する背面と、前記光出射面と前記背面との間に位置する実装面とを有する発光装置において、
前記光出射面側に位置し主発光面となる第1主面と、前記第1主面の反対側に位置する第2主面と、前記第1主面と前記第2主面の間にある側面とを有し、前記第2主面に第1電極および第2電極を有する発光素子と、
前記発光素子の側面を被覆し、前記発光素子の前記第1主面を被覆しない遮光部材と、
前記発光素子の前記第1電極と接続し、前記背面および前記実装面に渡って配置される第1端子被覆膜と、
前記発光素子の前記第2電極と接続し、前記背面および前記実装面に渡って配置される第2端子被覆膜と、
前記第1電極および前記第1被覆部材の双方と接する第1導電部材と、
前記第2電極および前記第2被覆部材の双方と接する第2導電部材と、を備える発光装置。
A light emitting device having a light emitting surface, a back surface located on the opposite side of the light emitting surface, and a mounting surface located between the light emitting surface and the back surface.
Between the first main surface located on the light emitting surface side and serving as the main light emitting surface, the second main surface located opposite to the first main surface, and the first main surface and the second main surface A light emitting element having a side surface and having a first electrode and a second electrode on the second main surface;
A light shielding member that covers the side surface of the light emitting element and does not cover the first major surface of the light emitting element;
A first terminal covering film connected to the first electrode of the light emitting element and disposed across the back surface and the mounting surface;
A second terminal covering film connected to the second electrode of the light emitting element and disposed across the back surface and the mounting surface;
A first conductive member in contact with both the first electrode and the first covering member;
A second conductive member in contact with both the second electrode and the second covering member.
前記導電部材は、導電性ペーストまたは半田である、請求項1に記載の発光装置。   The light emitting device according to claim 1, wherein the conductive member is a conductive paste or a solder. 前記発光装置は、前記発光素子の第1主面上に蛍光体を含む波長変換層を備える、請求項1に記載の発光装置。   The light emitting device according to claim 1, wherein the light emitting device comprises a wavelength conversion layer including a phosphor on a first main surface of the light emitting element. 前記波長変換層の平面形状は、前記発光素子の平面形状よりも大きい、請求項3に記載の発光装置。   The light emitting device according to claim 3, wherein a planar shape of the wavelength conversion layer is larger than a planar shape of the light emitting element. 前記発光装置は、前記波長変換層の上面上に透光層を備える、請求項3に記載の発光装置。   The light emitting device according to claim 3, wherein the light emitting device comprises a light transmitting layer on an upper surface of the wavelength conversion layer. 前記第1端子被覆膜および前記第2端子被覆膜の厚みは、0.03μm〜0.5μmである、請求項1に記載の発光装置。   The light emitting device according to claim 1, wherein a thickness of the first terminal covering film and the second terminal covering film is 0.03 μm to 0.5 μm. 前記遮光部材は、エポキシ樹脂または変成エポキシ樹脂である、請求項1に記載の発光装置。   The light emitting device according to claim 1, wherein the light shielding member is an epoxy resin or a modified epoxy resin. 前記発光装置の下面において、前記第1導電部材、前記第2導電部材および前記遮光部材は略面一に配置される、請求項1に記載の発光装置。   The light emitting device according to claim 1, wherein the first conductive member, the second conductive member, and the light shielding member are disposed substantially flush on a lower surface of the light emitting device. 前記第1導電部材は、前記第1電極の側面の一部のみを被覆し、
前記第2導電部材は、前記第2電極の側面の一部のみを被覆する、請求項1に記載の発光装置。
The first conductive member covers only a part of the side surface of the first electrode,
The light emitting device according to claim 1, wherein the second conductive member covers only a part of the side surface of the second electrode.
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