JP2000252524A - Surface mount light emitting diode and manufacture thereof - Google Patents
Surface mount light emitting diode and manufacture thereofInfo
- Publication number
- JP2000252524A JP2000252524A JP4789699A JP4789699A JP2000252524A JP 2000252524 A JP2000252524 A JP 2000252524A JP 4789699 A JP4789699 A JP 4789699A JP 4789699 A JP4789699 A JP 4789699A JP 2000252524 A JP2000252524 A JP 2000252524A
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light emitting
- resin
- thin metal
- metal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229920005989 resin Polymers 0.000 claims abstract description 99
- 239000011347 resin Substances 0.000 claims abstract description 99
- 229910052751 metal Inorganic materials 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 79
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 106
- 238000007789 sealing Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 4
- 239000010419 fine particle Substances 0.000 claims description 4
- 239000007850 fluorescent dye Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000000049 pigment Substances 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 230000003014 reinforcing effect Effects 0.000 claims description 4
- 239000006097 ultraviolet radiation absorber Substances 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000000881 depressing effect Effects 0.000 claims description 2
- 238000004080 punching Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 239000004593 Epoxy Substances 0.000 description 8
- 238000000465 moulding Methods 0.000 description 6
- -1 gallium nitride compound Chemical class 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- HJIAMFHSAAEUKR-UHFFFAOYSA-N (2-hydroxyphenyl)-phenylmethanone Chemical class OC1=CC=CC=C1C(=O)C1=CC=CC=C1 HJIAMFHSAAEUKR-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- GNBHRKFJIUUOQI-UHFFFAOYSA-N fluorescein Chemical compound O1C(=O)C2=CC=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 GNBHRKFJIUUOQI-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229940058287 salicylic acid derivative anticestodals Drugs 0.000 description 1
- 150000003872 salicylic acid derivatives Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、マザーボード上に
表面実装することのできる表面実装型発光ダイオード及
びその製造方法に係り、特に発光ダイオード素子の波長
を変換することで発光色を変えるタイプの表面実装型発
光ダイオードに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface-mounted light-emitting diode which can be surface-mounted on a motherboard and a method of manufacturing the same, and more particularly to a surface-light-emitting type in which the wavelength of a light-emitting diode element is changed to change the emission color. The present invention relates to a mounting type light emitting diode.
【０００２】[0002]
【従来の技術】従来、この種の波長変換型の発光ダイオ
ードとしては、例えば図１８に示したものが知られてい
る（特開平７−９９３４５号）。これはリードフレーム
型の発光ダイオード１ａであって、リードフレームの一
方側のメタルポスト２に凹部３を設け、この凹部３内に
発光ダイオード素子４を載せて固着すると共に、この発
光ダイオード素子４とリードフレームの他方側のメタル
ステム５とをボンディングワイヤ６によって接続する一
方、前記凹部３内に波長変換用の蛍光物質等が混入して
ある樹脂材７を充填し、さらに全体を砲弾形の樹脂モー
ルド８によって封止した構造のものである。2. Description of the Related Art Conventionally, as this kind of wavelength conversion type light emitting diode, for example, the one shown in FIG. 18 is known (Japanese Patent Application Laid-Open No. 7-99345). This is a lead frame type light emitting diode 1a, in which a concave portion 3 is provided in a metal post 2 on one side of the lead frame, and a light emitting diode element 4 is placed and fixed in the concave portion 3, and the light emitting diode element 4 While connecting the metal stem 5 on the other side of the lead frame with the bonding wire 6, the concave portion 3 is filled with a resin material 7 mixed with a fluorescent material for wavelength conversion or the like, and the whole is made of a bullet-shaped resin. It has a structure sealed by a mold 8.
【０００３】このような構造からなる発光ダイオード１
ａにあっては、発光ダイオード素子４からの発光波長が
凹部３内に充填した樹脂材７によって波長変換されるこ
とで、発光ダイオード素子４の元来の発光色とは異なる
発光をさせることが出来るものの、全体形状が砲弾形で
あるためにマザーボード上に表面実装することができ
ず、大型化してしまうといった問題があった。A light emitting diode 1 having such a structure
In the case of a, the wavelength of light emitted from the light emitting diode element 4 is converted by the resin material 7 filled in the recess 3, so that the light emitting diode element 4 emits light different from the original light emitting color. Although it can be, it has a problem that it cannot be surface-mounted on a motherboard because the overall shape is a bullet shape, resulting in an increase in size.
【０００４】その点、図１９に示したような表面実装型
の発光ダイオード１ｂは、偏平状のガラスエポキシ基板
９の上面に円筒状の反射カップ部１０を設け、その中に
発光ダイオード素子４を載置した後、その上部を樹脂モ
ールド８で封止した構造のものであるので、上記従来の
リードフレーム型の発光ダイオード１ａに比べて小型化
することができる（特開平１０−２４２５２６号）。従
って、この発光ダイオード１ｂの反射カップ部１０内に
上記波長変換用の樹脂材７を充填することで、表面実装
型の発光ダイオード１ｂにも、上記リードフレーム型の
発光ダイオード１ａと同様の働きを持たせることもでき
る。On the other hand, the surface mount type light emitting diode 1b as shown in FIG. 19 is provided with a cylindrical reflection cup portion 10 on the upper surface of a flat glass epoxy substrate 9, and the light emitting diode element 4 therein. After the mounting, the upper part is sealed with the resin mold 8, so that the size can be reduced as compared with the conventional lead frame type light emitting diode 1a (Japanese Patent Laid-Open No. Hei 10-242526). Therefore, by filling the resin material 7 for wavelength conversion into the reflection cup portion 10 of the light emitting diode 1b, the surface mounting type light emitting diode 1b has the same function as the lead frame type light emitting diode 1a. You can also have it.
【０００５】[0005]
【発明が解決しようとする課題】ところで、上記の表面
実装型の発光ダイオード１ｂは、発光ダイオード素子４
の上部が樹脂モールド８で封止された構造となっている
ため、発光ダイオード素子４で生じた発熱は下部のガラ
スエポキシ基板９から放熱せざるを得ない。しかしなが
ら、ガラスエポキシ基板９は強度上の観点から所定の厚
みを有しているために、発光ダイオード素子４からガラ
スエポキシ基板９に伝達された熱がマザーボードにまで
十分に放熱されずに内部にこもってしまい、結果的に発
光ダイオード素子４の寿命を縮めたり、発光輝度の低下
によって波長変換が十分に行なえないといった問題があ
った。By the way, the light emitting diode 1b of the surface mounting type described above is
Has a structure in which the upper portion is sealed with a resin mold 8, so that heat generated in the light emitting diode element 4 must be radiated from the lower glass epoxy substrate 9. However, since the glass epoxy board 9 has a predetermined thickness from the viewpoint of strength, the heat transmitted from the light emitting diode element 4 to the glass epoxy board 9 is not sufficiently dissipated to the motherboard, but stays inside. As a result, there is a problem that the life of the light emitting diode element 4 is shortened, and the wavelength conversion cannot be sufficiently performed due to a decrease in light emission luminance.
【０００６】そこで本発明は、表面実装型の発光ダイオ
ードにおいて、発光ダイオード素子を載置する基板の放
熱効果を高めることで発光ダイオード素子の寿命を延ば
すと共に発光輝度の低下を防ぎ、波長変換タイプの発光
ダイオードを表面実装型発光ダイオードに適用できるよ
うにすることを目的とする。Accordingly, the present invention is directed to a wavelength conversion type light-emitting diode of the wavelength conversion type, in which the heat radiation effect of the substrate on which the light-emitting diode element is mounted is enhanced, thereby extending the life of the light-emitting diode element and preventing a decrease in light emission luminance. An object of the present invention is to make a light emitting diode applicable to a surface mount type light emitting diode.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決するため
に、本発明の請求項１に係る表面実装型発光ダイオード
は、 薄板金属基板の上面に反射カップ部を形成し、こ
の反射カップ部の底部に発光ダイオード素子を載置する
と共に、反射カップ部内に波長変換用材料が混入された
第１の樹脂を充填して発光ダイオード素子をその中に埋
設し、さらに反射カップ部を含む薄板金属基板の上部を
集光レンズ部が形成された第２の樹脂で封止する一方、
薄板金属基板の裏面側に第３の樹脂を充填したことを特
徴とする。According to a first aspect of the present invention, there is provided a surface mount type light emitting diode having a reflecting cup formed on an upper surface of a thin metal substrate. A light-emitting diode element is placed on the bottom, a first resin mixed with a wavelength conversion material is filled in the reflection cup part, the light-emitting diode element is embedded therein, and a thin metal substrate including the reflection cup part is further provided. Is sealed with the second resin having the condensing lens portion formed thereon,
It is characterized in that a back surface side of the thin metal substrate is filled with a third resin.
【０００８】また、本発明の請求項２に係る表面実装型
発光ダイオードは、前記反射カップ部が薄板金属基板の
上面を凹ませることによって形成されると共に、この凹
みによって薄板金属基板の裏面側にできた凹凸部に第３
の樹脂を充填して薄板金属基板を補強したことを特徴と
する。According to a second aspect of the present invention, in the surface mounted light emitting diode, the reflection cup portion is formed by depressing the upper surface of the thin metal substrate, and the concave portion is formed on the rear surface side of the thin metal substrate. Third in the formed uneven part
The thin metal substrate is reinforced by filling the resin.
【０００９】また、本発明の請求項３に係る表面実装型
発光ダイオードは、前記充填された第１の樹脂の上面が
反射カップ部の上端縁より低いことを特徴とする。According to a third aspect of the present invention, there is provided a surface mount type light emitting diode, wherein an upper surface of the filled first resin is lower than an upper edge of the reflection cup portion.
【００１０】また、本発明の請求項４に係る表面実装型
発光ダイオードは、前記第１の樹脂に混入される波長変
換用材料が、蛍光染料又は蛍光顔料からなる蛍光物質で
あることを特徴とする。[0010] In the surface mount type light emitting diode according to a fourth aspect of the present invention, the wavelength conversion material mixed into the first resin is a fluorescent substance made of a fluorescent dye or a fluorescent pigment. I do.
【００１１】また、本発明の請求項５に係る表面実装型
発光ダイオードは、前記第２の樹脂には、拡散剤及び紫
外線吸収剤のうち少なくとも一方が混入されていること
を特徴とする。According to a fifth aspect of the present invention, in the surface mounted light emitting diode, at least one of a diffusing agent and an ultraviolet absorber is mixed in the second resin.
【００１２】また、本発明フ請求項６に係る表面実装型
発光ダイオードは、前記第３の樹脂には、微粒子又は粉
末状に形成したシリカ又はガラスフィラが混入されてい
ることを特徴とする。Further, the surface-mounted light emitting diode according to claim 6 of the present invention is characterized in that the third resin is mixed with fine particles or silica or glass filler formed in a powder form.
【００１３】また、本発明の請求項７に係る表面実装型
発光ダイオードは、前記発光ダイオード素子が、窒化ガ
リウム系化合物半導体あるいはシリコンカーバイド系化
合物半導体からなる青色発光の素子であることを特徴と
する。According to a seventh aspect of the present invention, in the surface mounted light emitting diode, the light emitting diode element is a blue light emitting element made of a gallium nitride compound semiconductor or a silicon carbide compound semiconductor. .
【００１４】また、本発明の請求項８に係る表面実装型
発光ダイオードは、上記薄板金属基板が厚さ０．５ｍｍ
以下の熱伝導性の優れた導電金属であることを特徴とす
る。Further, in the surface mount type light emitting diode according to claim 8 of the present invention, the thin metal substrate has a thickness of 0.5 mm.
It is a conductive metal having the following excellent thermal conductivity.
【００１５】また、本発明の請求項９に係る表面実装型
発光ダイオードの製造方法は、薄板金属基板の上面を凹
ませて反射カップ部を形成すると共に、薄板金属基板に
発光ダイオードの両電極を形成するためのスリットを打
抜くプレス工程と、薄板金属基板の裏面側にできた凹凸
部に第３の樹脂を充填して薄板金属基板を補強する第３
の樹脂充填工程と、薄板金属基板の反射カップ内に発光
ダイオード素子を載置して一方の電極に接続するダイボ
ンド工程と、発光ダイオード素子と前記スリットによっ
て形成された他方の電極とをボンディングワイヤで接続
するワイヤボンド工程と、反射カップ部内に波長変換用
材料が混入された第１の樹脂を充填して発光ダイオード
素子をその中に埋設する第１の樹脂封止工程と、反射カ
ップ部を含む薄板金属基板の上部を第２の樹脂で封止す
る第２の樹脂封止工程とを備えたことを特徴とする。According to a ninth aspect of the present invention, there is provided a method of manufacturing a surface mount type light emitting diode, wherein a reflection cup portion is formed by recessing an upper surface of a thin metal substrate, and both electrodes of the light emitting diode are formed on the thin metal substrate. A pressing step of punching a slit for forming, and a third step of filling the uneven portion formed on the back side of the thin metal substrate with a third resin to reinforce the thin metal substrate.
A resin filling step, a die bonding step of mounting a light emitting diode element in a reflection cup of a thin metal substrate and connecting to one electrode, and a bonding wire connecting the light emitting diode element and the other electrode formed by the slit. A wire bonding step for connecting, a first resin sealing step of filling a first resin mixed with a wavelength conversion material into the reflection cup portion and embedding the light emitting diode element therein, and a reflection cup portion And a second resin sealing step of sealing an upper portion of the thin metal substrate with a second resin.
【００１６】また、本発明の請求項１０に係る表面実装
型発光ダイオードの製造方法は、薄板金属をプレス加工
して複数の薄板金属基板からなる集合基板を形成し、こ
の集合基板に対して上記薄板金属基板を補強するための
第３の樹脂充填工程、発光ダイオード素子のダイボンド
工程、ワイヤボンド工程、第１の樹脂封止工程及び第２
の樹脂封止工程を行なったのち、集合基板に想定された
分割ラインに沿って集合基板を切断し、一つ一つの発光
ダイオード毎に分割することを特徴とする。According to a tenth aspect of the present invention, there is provided a method of manufacturing a surface mount type light emitting diode, wherein a thin metal plate is pressed to form an aggregate substrate comprising a plurality of thin metal substrates. A third resin filling step for reinforcing the thin metal substrate, a die bonding step of the light emitting diode element, a wire bonding step, a first resin sealing step, and a second
After performing the resin sealing step described above, the collective substrate is cut along the dividing lines assumed for the collective substrate, and the light emitting diodes are divided into individual light emitting diodes.
【００１７】[0017]
【発明の実施の形態】以下、添付図面に基づいて本発明
に係る表面実装型発光ダイオード及び製造方法の実施の
形態を詳細に説明する。図１及び図２は、本発明に係る
表面実装型発光ダイオード１１の第１の実施例を示した
ものである。この実施例に係る表面実装型発光ダイオー
ド１１は、従来のガラスエポキシ基板に代わって、銅や
鉄あるいはリン青銅など熱伝導率の良い薄板金属を所定
形状にプレス成形した薄板金属基板１２を用いている。
この薄板金属基板１２は、両側に段差部１３，１４を有
する略台形状のもので、上面１５の中央部には発光ダイ
オード素子１６を収容する反射カップ部１７が設けられ
ている。この反射カップ部１７は、上面１５をプレス成
形によってすり鉢状に凹ませたもので、発光ダイオード
素子１６を載置する円形状の底面１８と、上方向に広が
る内周面１９とで形成されている。内周面１９の傾斜角
度は、発光ダイオード素子１６からの光の拡散を抑えて
できるだけ上方へ導くように設定され、また発光ダイオ
ード素子１６からの光の反射率を上げるために内周面１
９が鏡面仕上げになっている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a surface mount type light emitting diode and a manufacturing method according to the present invention will be described in detail with reference to the accompanying drawings. FIGS. 1 and 2 show a first embodiment of a surface-mount type light emitting diode 11 according to the present invention. The surface-mount type light emitting diode 11 according to this embodiment uses a thin metal substrate 12 obtained by press-forming a thin metal having good thermal conductivity such as copper, iron or phosphor bronze into a predetermined shape instead of a conventional glass epoxy substrate. I have.
The thin metal substrate 12 has a substantially trapezoidal shape having step portions 13 and 14 on both sides, and a reflection cup portion 17 for accommodating a light emitting diode element 16 is provided at the center of the upper surface 15. The reflection cup portion 17 is formed by pressing the upper surface 15 into a mortar shape by press molding, and is formed by a circular bottom surface 18 on which the light emitting diode element 16 is mounted and an inner peripheral surface 19 extending upward. I have. The angle of inclination of the inner peripheral surface 19 is set so as to suppress the diffusion of light from the light emitting diode elements 16 and to guide the light upward as much as possible.
9 is mirror-finished.
【００１８】上記薄板金属基板１２の一方の段差部１３
には、他方の段差部１４と平行なスリット２１が形成さ
れ、このスリット２１によって薄板金属基板１２を２つ
に分離している。薄板金属基板１２自体が導電性である
ため、このようなスリット２１を設けることによって、
スリット２１を挟んで反射カップ部１７側にダイボンド
電極を、反対側の段差部１３側にワイヤボンド電極をそ
れぞれ形成している。スリット２１は、非導電性のマス
キングテープ２７によって塞がれている。なお、薄板金
属基板１２にメッキを施すことで光反射効率が上がり、
また錆の発生等も防止することができる。メッキは、例
えば下地にニッケルメッキを用い、その上に銀メッキを
施すなど公知の手段で行なえる。One step 13 of the thin metal substrate 12
Is formed with a slit 21 which is parallel to the other step portion 14, and the thin metal substrate 12 is separated into two by this slit 21. Since the thin metal substrate 12 itself is conductive, by providing such a slit 21,
A die bond electrode is formed on the reflection cup portion 17 side with the slit 21 interposed therebetween, and a wire bond electrode is formed on the opposite step portion 13 side. The slit 21 is closed by a non-conductive masking tape 27. It should be noted that the light reflection efficiency is increased by plating the thin metal substrate 12,
Further, rust can be prevented from occurring. The plating can be performed by a known means such as, for example, using nickel plating as a base and silver plating thereon.
【００１９】上記薄板金属基板１２の反射カップ部１７
に配置される発光ダイオード素子１６は略立方体形状の
微小チップであり、下面と上面にそれぞれ電極を有す
る。そして、下面電極を反射カップ部１７の底面１８に
導電性接着剤２２で固着し、上面電極をボンディングワ
イヤ２３によってスリット２１の反対側の段差部１３に
設けられたワイヤボンド電極に接続することで導通が図
られる。この実施例における発光ダイオード素子１６に
は、窒化ガリウム系化合物半導体あるいはシリコンカー
バイド系化合物半導体からなる青色発光の素子が用いら
れる。The reflection cup 17 of the thin metal substrate 12
The light-emitting diode element 16 disposed on the substrate is a substantially cubic microchip, and has electrodes on the lower surface and the upper surface, respectively. Then, the lower surface electrode is fixed to the bottom surface 18 of the reflection cup portion 17 with a conductive adhesive 22, and the upper surface electrode is connected by a bonding wire 23 to a wire bond electrode provided on the step portion 13 opposite to the slit 21. Conduction is achieved. As the light emitting diode element 16 in this embodiment, a blue light emitting element made of a gallium nitride compound semiconductor or a silicon carbide compound semiconductor is used.
【００２０】上記反射カップ部１７には波長変換用材料
を混入した第１の樹脂３５が充填されており、前記発光
ダイオード素子１６がこの中に埋設されている。この波
長変換用材料には蛍光染料や蛍光顔料等からなる蛍光物
質が用いられ、青色の発光ダイオード素子に励起されて
長波長の可視光を発して、例えば青色の発光色を白色等
に変換することができる。また、蛍光物質を混入する樹
脂材にはエポキシ系の透明樹脂が用いられるが、蛍光物
質の混入量を変えることで変換する波長領域を調整する
ことができる。さらに、第１の樹脂３５の充填量は、図
１及び図２にも示されるように、その上面が反射カップ
部１７の上端縁３６より低い位置であり、少なくとも反
射カップ部１７の上端縁３６より飛び出さないことが望
ましい。これは、複数の表面実装型発光ダイオード１１
を近接配置した時に、一方の発光を他方の反射カップ部
１７の上端縁３６で遮断することで、混色を防ぐもので
ある。なお、前記蛍光物質として用いられる蛍光染料と
してはフルオレセイン、ローダミン等の有機蛍光体を、
また蛍光顔料としてはタングステン酸カルシウム等の無
機蛍光体を使用することができる。The reflection cup 17 is filled with a first resin 35 mixed with a wavelength conversion material, and the light emitting diode element 16 is embedded therein. A fluorescent substance such as a fluorescent dye or a fluorescent pigment is used as the wavelength conversion material, and is excited by a blue light emitting diode element to emit long-wavelength visible light, for example, to convert a blue light emission color to white or the like. be able to. In addition, an epoxy-based transparent resin is used for the resin material mixed with the fluorescent substance, but the wavelength region to be converted can be adjusted by changing the mixed amount of the fluorescent substance. Further, as shown in FIGS. 1 and 2, the filling amount of the first resin 35 is such that the upper surface thereof is lower than the upper edge 36 of the reflective cup 17, and at least the upper edge 36 of the reflective cup 17. It is desirable not to jump out more. This is because a plurality of surface mounted light emitting diodes 11
Are arranged close to each other, one light emission is blocked by the upper end edge 36 of the other reflection cup portion 17, thereby preventing color mixing. In addition, as a fluorescent dye used as the fluorescent substance, an organic phosphor such as fluorescein and rhodamine,
As the fluorescent pigment, an inorganic phosphor such as calcium tungstate can be used.
【００２１】上記反射カップ部１７を含む薄板金属基板
１２の上部は、第２の樹脂２４によって封止されてい
る。この第２の樹脂２４もエポキシ系の透明樹脂を主成
分としたものであり、これに第１の樹脂３５で波長変換
された発光色の均一性を良くするための拡散剤や樹脂の
老化を防ぐための紫外線吸収剤等が混入されている。ま
た、第２の樹脂２４は薄型金属基板１２と略同じ外形の
直方体形状をしており、上面中央部には半球状の集光レ
ンズ部２５が一体に突出形成されている。この集光レン
ズ部２５は、反射カップ部１７の上方に位置しており、
反射カップ部１７の第１の樹脂３５で波長変換した発光
ダイオード素子１６からの発光を集光する凸レンズとし
ての働きを持つ。即ち、発光ダイオード素子１６から発
した光は、そのまま上方に直進するものと、反射カップ
部１７の内周面１９で反射してから上方に向かうものに
分かれるが、いずれの光も第１の樹脂３５によって波長
変換された後、集光レンズ部２５で共に集光されるため
に高輝度の白色発光が得られることになる。なお、集光
レンズ部２５の曲率半径や形状、屈折率は、集光が得ら
れる範囲では特に限定されるものではない。なお、前述
の拡散剤としては酸化アルミニウムや二酸化ケイ素等を
用いることができ、紫外線吸収剤としてはサリチル酸誘
導体や２−ヒドロキシベンゾフェノン誘導体等を用いる
ことができる。The upper portion of the thin metal substrate 12 including the reflection cup 17 is sealed with a second resin 24. The second resin 24 is also made of an epoxy-based transparent resin as a main component, and a diffusion agent or a resin aging for improving the uniformity of the emission color converted by the first resin 35. An ultraviolet absorber or the like for prevention is mixed. Further, the second resin 24 has a rectangular parallelepiped shape having substantially the same outer shape as the thin metal substrate 12, and a hemispherical condensing lens portion 25 is integrally formed at the center of the upper surface so as to protrude. This condenser lens portion 25 is located above the reflection cup portion 17,
The reflective cup portion 17 functions as a convex lens that collects light emitted from the light emitting diode element 16 whose wavelength has been converted by the first resin 35. That is, the light emitted from the light emitting diode element 16 is divided into a light that goes straight upward and a light that goes upward after being reflected by the inner peripheral surface 19 of the reflection cup portion 17. After the wavelength conversion by 35, the light is condensed together by the condensing lens unit 25, so that high-luminance white light emission is obtained. The radius of curvature, shape, and refractive index of the condenser lens unit 25 are not particularly limited as long as light can be collected. Note that aluminum oxide, silicon dioxide, or the like can be used as the above-described diffusing agent, and salicylic acid derivatives or 2-hydroxybenzophenone derivatives can be used as the ultraviolet absorber.
【００２２】一方、薄板金属基板１２は厚みが０．５ｍ
ｍ以下と薄いことから、これを補強するためと、スリッ
ト２１によって分離された薄板金属基板１２を所定位置
に確保するために、薄板金属基板１２の裏面側に第３の
樹脂２６が配設される。この第３の樹脂２６は、段差部
１３，１４及び反射カップ部１７によって薄板金属基板
１２の裏面側にできた凹凸部に隙間なく充填され、薄板
金属基板１２を裏面側から補強している。この第３の樹
脂２６の主成分は、上記第２の樹脂２４と同様エポキシ
系の樹脂であるが、この場合には透明である必要はな
い。また、第３の樹脂２６を薄板金属基板１２の線膨張
係数に近づけるために、シリカやガラスフィラ等の微粒
子又は粉末が適量混入されており、これによって、補強
効果をより一層高めることができると共に、第３の樹脂
２６による放熱効果も高めることができる。従って、線
膨張係数が薄板金属基板１２のそれに近く且つ絶縁性を
有する添加材であれば上述のものには限定されない。On the other hand, the thin metal substrate 12 has a thickness of 0.5 m.
m, the third resin 26 is provided on the back side of the thin metal substrate 12 to reinforce the thin metal substrate 12 and to secure the thin metal substrate 12 separated by the slit 21 at a predetermined position. You. The third resin 26 is filled in the uneven portions formed on the rear surface side of the thin metal substrate 12 without gaps by the steps 13, 14 and the reflection cup portion 17, and reinforces the thin metal substrate 12 from the rear surface side. The main component of the third resin 26 is an epoxy resin like the second resin 24, but in this case, it is not necessary to be transparent. Further, in order to bring the third resin 26 close to the linear expansion coefficient of the thin metal substrate 12, fine particles or powder such as silica or glass filler are mixed in an appropriate amount, whereby the reinforcing effect can be further enhanced. Also, the heat dissipation effect of the third resin 26 can be enhanced. Therefore, the additive is not limited to the above as long as the additive has a linear expansion coefficient close to that of the thin metal substrate 12 and has an insulating property.
【００２３】図２に示したように、上記構成からなる表
面実装型発光ダイオード１１は、マザーボード２８の上
面に直接実装することができる。即ち、マザーボード２
８の上面に形成されている電極パターン２９ａ，２９ｂ
上に表面実装型発光ダイオード１１を上向きに載置し、
薄板金属基板１２の左右両側の段差部１３，１４をマザ
ーボード２８の各電極パターン２９ａ，２９ｂに半田３
０で接合することによって高さ寸法を抑えた発光ダイオ
ードの実装が完了する。このようにしてマザーボード２
８に実装された表面実装型発光ダイオード１１からは青
色発光から白色発光に変換された光が上方向への指向性
を有しながら発せられる。また、発光ダイオード素子１
６が発光する際に生じた熱は、薄板金属基板１２及び第
３の樹脂２６を介してマザーボード２８に伝達される
が、両者とも熱伝導率が非常によいので、マザーボード
２８に素早く伝わって外部に放熱される。As shown in FIG. 2, the surface-mounted light-emitting diode 11 having the above configuration can be directly mounted on the upper surface of the motherboard 28. That is, motherboard 2
8, electrode patterns 29a and 29b formed on the upper surface
The surface mount type light emitting diode 11 is placed on the upper side,
The steps 13, 14 on the left and right sides of the thin metal substrate 12 are soldered to the respective electrode patterns 29 a, 29 b of the motherboard 28.
By bonding at 0, the mounting of the light emitting diode with a reduced height dimension is completed. In this way motherboard 2
Light converted from blue light emission to white light emission is emitted from the surface-mounted light emitting diode 11 mounted on 8 while having directivity in the upward direction. Light emitting diode element 1
6 is transmitted to the motherboard 28 via the thin metal substrate 12 and the third resin 26. Since both of them have very good thermal conductivity, the heat is quickly transmitted to the motherboard 28 and externally. The heat is dissipated.
【００２４】図３乃至図７は、上記構成からなる表面実
装型発光ダイオード１１の製造方法を示したものであ
る。この製造方法は、集合基板を用いて多数の発光ダイ
オードを同時に製造する場合の方法である。第１のプレ
ス工程では、図３（ａ）（ｂ）に示したように、大きな
薄板金属に多数の薄板金属基板１２をプレス成形して集
合基板３１を形成する。個々の薄板金属基板１２にはそ
れぞれ段差部１３，１４と反射カップ部１７とが形成さ
れ、また分離用のスリット２１もプレスによって同時に
開設し、その上をマスキングテープ２７で塞ぐ。FIGS. 3 to 7 show a method of manufacturing the surface-mounted light-emitting diode 11 having the above-described structure. This manufacturing method is a method for manufacturing a large number of light emitting diodes simultaneously using an aggregate substrate. In the first pressing step, as shown in FIGS. 3A and 3B, a large number of thin metal substrates 12 are press-formed on a large thin metal to form an aggregate substrate 31. Steps 13 and 14 and a reflection cup 17 are formed on each of the thin metal substrates 12, and slits 21 for separation are simultaneously opened by pressing, and the top of the slits 21 is closed with a masking tape 27.
【００２５】次いで、図４に示したように、集合基板３
１を裏返し、各薄板金属基板１２の裏面側にできている
凹凸部に第３の樹脂２６を充填する。この時、スリット
２１はマスキングテープ２７によって塞がれているの
で、第３の樹脂２６がスリット２１から漏れ出るような
ことはない。充填後直ちに、集合基板３１をキュア炉に
入れて第３の樹脂２６を硬化させる。Next, as shown in FIG.
1 is turned upside down, and the third resin 26 is filled in the uneven portion formed on the back surface side of each thin metal substrate 12. At this time, since the slit 21 is closed by the masking tape 27, the third resin 26 does not leak from the slit 21. Immediately after the filling, the collective substrate 31 is placed in a cure furnace to cure the third resin 26.
【００２６】キュア炉から出した集合基板３１を上向き
に置き、図５に示したように、各薄板金属基板１２の反
射カップ部１７の底面１８に導電性接着剤２２を介して
発光ダイオード素子１６を接着固定する。再びキュア炉
に入れて発光ダイオード素子１６を固着したのち、発光
ダイオード素子１６の上面電極と薄板金属基板１２のワ
イヤボンド電極とをボンディングワイヤ２３によってつ
なぐ。The assembly substrate 31 taken out of the curing furnace is placed upward, and as shown in FIG. 5, the light emitting diode element 16 is placed on the bottom surface 18 of the reflection cup portion 17 of each thin metal substrate 12 via the conductive adhesive 22. Adhesively fixed. After the light emitting diode element 16 is fixed in the curing furnace again, the upper electrode of the light emitting diode element 16 and the wire bond electrode of the thin metal substrate 12 are connected by the bonding wire 23.
【００２７】次いで、図６に示したように、蛍光物質を
混入した第１の樹脂３５を反射カップ部１７内に流し込
み、発光ダイオード素子１６の上面が隠れる位置まで充
填する。なお、前述したように、反射カップ部１７の上
端縁３６まで充填しないように注意する。充填後キュア
炉に入れて第１の樹脂３５を熱硬化させる。Next, as shown in FIG. 6, a first resin 35 mixed with a fluorescent substance is poured into the reflection cup portion 17 and is filled up to a position where the upper surface of the light emitting diode element 16 is hidden. Note that, as described above, care is taken not to fill the upper end edge 36 of the reflection cup portion 17. After the filling, the first resin 35 is placed in a cure furnace and thermally cured.
【００２８】次の第２の樹脂封止工程では、集光レンズ
部２５を同時に成形するための成形金型３４内にエポキ
シ系の樹脂を注ぎ込み、その上に集合基板３１をフェー
スダウンすることで、図７に示すような第１の樹脂３５
で樹脂封止された発光ダイオード素子１６及びボンディ
ングワイヤ２３を封じ込めた第２の樹脂２４を集合基板
３１の上部全体に形成する。このようにして、集光レン
ズ部２５も一体に形成したのち、集合基板３１を再びキ
ュア炉に入れて第２の樹脂２４を熱硬化させる。In the next second resin sealing step, an epoxy resin is poured into a molding die 34 for simultaneously molding the condenser lens portion 25, and the collective substrate 31 is face-down thereon. , A first resin 35 as shown in FIG.
The second resin 24 enclosing the light emitting diode element 16 and the bonding wires 23 sealed with the resin is formed over the entire upper portion of the collective substrate 31. After the condensing lens portion 25 is integrally formed in this way, the collective substrate 31 is again put into a curing furnace, and the second resin 24 is thermally cured.
【００２９】最終工程では、図８に示すように、集合基
板３１に想定されたＸ，Ｙ方向の分割ライン３２，３３
に沿って集合基板３１を桝目状にダイシング又はスライ
シングし、一つ一つの表面実装型発光ダイオード１１毎
に分割する。分割された各チップは、自動マウント機に
よって一つ一つが真空吸着されてマザーボード２８上に
移送され、次のマザーボード実装工程へと進む。In the final step, as shown in FIG. 8, the dividing lines 32 and 33 in the X and Y directions
The substrate 31 is diced or sliced in a grid along the line, and divided into individual surface-mounted light emitting diodes 11. Each of the divided chips is vacuum-adsorbed one by one by an automatic mounting machine, transferred to the motherboard 28, and proceeds to the next motherboard mounting step.
【００３０】図９及び図１０は、本発明に係る表面実装
型発光ダイオード１１の第２の実施例を示したものであ
る。この実施例に係る表面実装型発光ダイオード１１
は、薄板金属基板１２のスリット２１をプレス成形によ
るのではなく、ハーフダイシングによって開設した以外
は、先の実施例に係る表面実装型発光ダイオードと同一
の構成からなるので、詳細な説明は省略する。なお、こ
の実施例では、スリット２１から薄板金属基板１２の上
面側に第３の樹脂２６の一部が突出することになる。FIGS. 9 and 10 show a second embodiment of the surface mount type light emitting diode 11 according to the present invention. Surface mount type light emitting diode 11 according to this embodiment
Has the same configuration as the surface-mounted light-emitting diode according to the previous embodiment except that the slit 21 of the thin metal substrate 12 is opened by half dicing instead of by press molding, and therefore detailed description is omitted. . In this embodiment, a part of the third resin 26 projects from the slit 21 to the upper surface of the thin metal substrate 12.
【００３１】図１１乃至図１７は、上記第２実施例にお
ける表面実装型発光ダイオード１１の製造方法を示した
ものであり、上記ハーフダイシングを用いたことで、上
述の製造方法と多少異なっている。この実施例に係る製
造方法では、図１１（ａ）（ｂ）に示したように、薄板
金属をプレス成形して集合基板３１を形成する際に、先
の実施例のような分離用のスリット２１は設けない。FIGS. 11 to 17 show a method of manufacturing the surface-mounted light emitting diode 11 in the second embodiment, which is slightly different from the above-described manufacturing method by using the half dicing. . In the manufacturing method according to this embodiment, as shown in FIGS. 11A and 11B, when forming a collective substrate 31 by press-forming a sheet metal, a slit for separation as in the previous embodiment is used. 21 is not provided.
【００３２】次の発光ダイオード素子１６のダイボンド
工程とワイヤボンド工程は、図１２に示したように、集
合基板３１の上面側から各薄板金属基板１２の反射カッ
プ部１７の底面１８に導電性接着剤２２を介して発光ダ
イオード素子１６を接着固定し、これをキュア炉に入れ
て発光ダイオード素子１６を固着したのち、発光ダイオ
ード素子１６の上面電極とワイヤボンド電極が形成され
る薄板金属基板１２の一方の段差部１３とをボンディン
グワイヤ２３によってつなぐ。In the next die bonding step and wire bonding step of the light emitting diode element 16, as shown in FIG. 12, conductive bonding is performed from the upper surface side of the collective substrate 31 to the bottom surface 18 of the reflection cup portion 17 of each thin metal substrate 12. The light emitting diode element 16 is adhered and fixed via the agent 22 and is placed in a curing furnace to fix the light emitting diode element 16, and then the upper surface electrode of the light emitting diode element 16 and the thin metal substrate 12 on which the wire bond electrode is formed are formed. One step 13 is connected by a bonding wire 23.
【００３３】図１３に示した第１の樹脂封止工程では、
先の実施例と同様、反射カップ部１７内に第１の樹脂３
５を適量流し込み、発光ダイオード素子１６をその中に
埋設する。反射カップ部１７の上端縁３６まで達しない
ように充填してからキュア炉に入れて熱硬化させる。In the first resin sealing step shown in FIG.
As in the previous embodiment, the first resin 3
5 is poured in an appropriate amount, and the light emitting diode element 16 is embedded therein. It is filled so as not to reach the upper end edge 36 of the reflection cup portion 17 and then put into a curing furnace and thermally cured.
【００３４】次の第２の樹脂封止工程においても、先の
実施例と同様に、第２の樹脂２４及び集光レンズ部２５
を同時成形するための成形金型３４内に樹脂を注ぎ込
み、その上に集合基板３１をフェースダウンすること
で、図１４に示したような第１の樹脂３５で樹脂封止さ
れた発光ダイオード素子１６及びボンディングワイヤ２
３を封じ込めた第２の樹脂２４を形成する。このように
して、集光レンズ部２５を一体に形成したのち、集合基
板３１を再びキュア炉に入れて第２の樹脂２４を熱硬化
させる。In the next second resin sealing step, as in the previous embodiment, the second resin 24 and the condenser lens portion 25 are formed.
The resin is poured into a molding die 34 for simultaneously molding the LED, and the collective substrate 31 is face-down thereon, so that the light emitting diode element resin-sealed with the first resin 35 as shown in FIG. 16 and bonding wire 2
A second resin 24 containing 3 is formed. After the condensing lens portion 25 is integrally formed in this way, the collective substrate 31 is again put into a cure furnace, and the second resin 24 is thermally cured.
【００３５】次に、図１５に示したように、集合基板３
１を裏返し、電極分離用のスリット２１を入れる。この
スリット２１は、薄板金属基板１２の一方の段差部１３
に裏面側からハーフダイシングするものであり、薄板金
属基板１２と一緒に第２の樹脂２４の一部をカットす
る。このハーフダイシング工程によって、薄板金属基板
１２にダイボンド電極とワイヤボンド電極とを分離形成
することができる。Next, as shown in FIG.
1 is turned over, and a slit 21 for electrode separation is inserted. The slit 21 is formed in one of the step portions 13 of the thin metal substrate 12.
Then, a part of the second resin 24 is cut together with the thin metal substrate 12. By this half dicing step, a die bond electrode and a wire bond electrode can be separately formed on the thin metal substrate 12.
【００３６】図１６に示したように、ハーフダイシング
したのち、集合基板３１の裏面側に第３の樹脂２６を充
填して補強する。この時、上記ハーフダイシングした各
スリット２１にも第３の樹脂２６が充填され第２の樹脂
２４の一部にも入り込むので、左右の電極を完全に分離
できる。充填後直ちにキュア炉に入れて第３の樹脂２６
を熱硬化させる。As shown in FIG. 16, after the half dicing, the third resin 26 is filled in the back surface of the collective substrate 31 to reinforce it. At this time, the third resin 26 is filled into each of the slits 21 that have been half-diced and also enters a part of the second resin 24, so that the left and right electrodes can be completely separated. Immediately after filling, the resin is placed in a curing furnace and the third resin 26
Is thermally cured.
【００３７】最終工程は、図１７に示したように、先の
実施例と同様、集合基板３１に想定されたＸ，Ｙ方向の
分割ライン３２，３３に沿って集合基板３１を桝目状に
ダイシング又はスライシングし、一つ一つの表面実装型
発光ダイオード１１毎に分割する。In the final step, as shown in FIG. 17, similar to the previous embodiment, the collective substrate 31 is diced in a mesh shape along the dividing lines 32 and 33 in the X and Y directions assumed for the collective substrate 31. Alternatively, the light emitting device is sliced and divided into each of the surface-mounted light emitting diodes 11.
【００３８】なお、上記いずれの実施例もボンディング
ワイヤ２３を用いた接続方法について説明したが、この
発明はこれに限定されるものではなく、例えば半田バン
プを用いたフリップチップ実装などの接続方法も含まれ
るものである。In each of the embodiments described above, the connection method using the bonding wire 23 has been described. However, the present invention is not limited to this. For example, a connection method such as flip chip mounting using solder bumps is also available. Included.
【００３９】[0039]
【発明の効果】以上説明したように、本発明に係る表面
実装型発光ダイオードによれば、発光ダイオード素子を
載置するための基板を熱伝導効率のよい薄板金属で形成
し、発光ダイオード素子での発熱をマザーボードから素
早く放熱できるようにしたので、表面実装型発光ダイオ
ードにおいても波長変換によって発光色を変えるタイプ
の発光ダイオードに適用できるといった効果がある。As described above, according to the surface mount type light emitting diode of the present invention, the substrate on which the light emitting diode element is mounted is formed of a thin metal having good heat conduction efficiency. The heat generated from the motherboard can be quickly dissipated from the motherboard, so that the present invention can be applied to a surface-mounted light-emitting diode, which can be applied to a light-emitting diode that changes the color of light emitted by wavelength conversion.
【００４０】また、本発明によれば、反射カップ部内に
充填される第１の樹脂の上面を該反射カップ部の上端縁
より低くしたので、複数の発光ダイオードを近接配置し
ても一方の発光ダイオードの発光が他方の発光ダイオー
ドに影響を及ぼすことなく混色を防ぐことができる。Further, according to the present invention, since the upper surface of the first resin filled in the reflection cup portion is lower than the upper end edge of the reflection cup portion, even if a plurality of light emitting diodes are arranged close to each other, one of the light emitting diodes can emit light. Color mixing can be prevented without the light emission of the diode affecting the other light emitting diode.
【００４１】また、本発明によれば、薄板金属基板を補
強する第３の樹脂には、金属の線膨張係数に近いシリカ
やガラスフィラの微粒子又は粉末が混入されているの
で、薄板金属基板の補強が確実であるのに加えて、これ
らの混入によって第３の樹脂の放熱効果も同時に高める
ことができる。According to the present invention, the third resin for reinforcing the thin metal substrate contains fine particles or powder of silica or glass filler having a coefficient of linear expansion close to that of the metal. In addition to the reliable reinforcement, the heat dissipation effect of the third resin can be simultaneously increased by mixing these components.
【００４２】また、本発明に係る表面実装型発光ダイオ
ードの製造方法によれば、薄板金属のプレス加工のみで
基板を形成することができるので、従来のガラスエポキ
シ基板に比べて大幅にコストダウンすることができる。
また、薄板金属からなる集合基板上で一括処理する製造
工程を採用したことで、簡単にしかも大量に表面実装型
発光ダイオードを得ることができ、大幅なコストダウン
が可能で経済的効果が大である。さらに、集光レンズ部
が封止樹脂と一体に成形されている他、マザーボードへ
の自動マウントも可能であるなど、工数削減や歩留りの
向上、更には信頼性の向上なども図ることができる。Further, according to the method of manufacturing a surface-mounted light-emitting diode according to the present invention, since the substrate can be formed only by pressing a thin metal plate, the cost is greatly reduced as compared with a conventional glass epoxy substrate. be able to.
In addition, by adopting a manufacturing process that performs batch processing on a collective substrate made of thin metal, surface mount type light emitting diodes can be obtained easily and in large quantities, and significant cost reduction is possible and economic effect is large. is there. Furthermore, in addition to the condensing lens portion being formed integrally with the sealing resin, automatic mounting on a motherboard is also possible, so that the number of steps can be reduced, the yield can be improved, and the reliability can be improved.
【図１】本発明に係る表面実装型発光ダイオードの第１
の実施例を示す斜視図である。FIG. 1 is a first view of a surface mount type light emitting diode according to the present invention.
It is a perspective view which shows the Example of FIG.
【図２】上記図１のＡ−Ａ線に沿った断面図である。FIG. 2 is a sectional view taken along line AA of FIG. 1;
【図３】薄板金属からなる集合基板をプレス成形した時
の図であって、（ａ）は集合基板の平面図、（ｂ）は上
記（ａ）のＢ−Ｂ線に沿った断面図である。FIGS. 3A and 3B are views when a collective substrate made of a sheet metal is press-formed, wherein FIG. 3A is a plan view of the collective substrate and FIG. 3B is a cross-sectional view taken along the line BB of FIG. is there.
【図４】上記集合基板の裏面側に第３の樹脂を充填した
時の断面図である。FIG. 4 is a cross-sectional view when a back surface side of the collective substrate is filled with a third resin.
【図５】発光ダイオード素子のダイボンド工程とワイヤ
ボンド工程を示す断面図である。FIG. 5 is a sectional view showing a die bonding step and a wire bonding step of the light emitting diode element.
【図６】上記集合基板の反射カップ部を第１の樹脂で封
止した時の断面図である。FIG. 6 is a sectional view when the reflection cup portion of the collective substrate is sealed with a first resin.
【図７】上記集合基板の上部を第２の樹脂で封止した時
の断面図である。FIG. 7 is a cross-sectional view when the upper portion of the collective substrate is sealed with a second resin.
【図８】上記集合基板を分割ラインに沿って分割する場
合の説明図である。FIG. 8 is an explanatory diagram in the case of dividing the collective substrate along a division line.
【図９】本発明に係る表面実装型発光ダイオードの第２
の実施例を示す斜視図である。FIG. 9 shows a second example of the surface mount type light emitting diode according to the present invention.
It is a perspective view which shows the Example of FIG.
【図１０】上記図９のＣ−Ｃ線に沿った断面図である。FIG. 10 is a sectional view taken along the line CC of FIG. 9;
【図１１】上記第２の実施例に係る集合基板をプレス成
形した時の図であって、（ａ）は集合基板の平面図、
（ｂ）は上記（ａ）のＤ−Ｄ線に沿った断面図である。FIGS. 11A and 11B are views when the collective substrate according to the second embodiment is press-formed, and FIG. 11A is a plan view of the collective substrate;
(B) is a sectional view taken along the line DD of (a).
【図１２】発光ダイオード素子のダイボンド工程とワイ
ヤボンド工程を示す断面図である。FIG. 12 is a cross-sectional view showing a die bonding step and a wire bonding step of the light emitting diode element.
【図１３】上記集合基板の反射カップ部を第１の樹脂で
封止した時の断面図である。FIG. 13 is a cross-sectional view when the reflection cup portion of the collective substrate is sealed with a first resin.
【図１４】上記集合基板の上部を第２の樹脂で封止した
時の断面図である。FIG. 14 is a cross-sectional view when the upper portion of the collective substrate is sealed with a second resin.
【図１５】上記集合基板にハーフダイシングでスリット
を形成する場合の断面図である。FIG. 15 is a cross-sectional view when a slit is formed in the collective substrate by half dicing.
【図１６】上記集合基板の裏面側に第３の樹脂を充填し
た時の断面図である。FIG. 16 is a cross-sectional view when a back surface side of the collective substrate is filled with a third resin.
【図１７】第２の実施例に係る集合基板を分割ラインに
沿って分割する場合の説明図である。FIG. 17 is an explanatory diagram of a case where the collective substrate according to the second embodiment is divided along a division line.
【図１８】従来における波長変換型の発光ダイオードの
一例を示す断面図である。FIG. 18 is a cross-sectional view illustrating an example of a conventional wavelength conversion type light emitting diode.
【図１９】従来における表面実装型発光ダイオードの一
例を示す斜視図である。FIG. 19 is a perspective view showing an example of a conventional surface mount light emitting diode.
１１ 表面実装型発光ダイオード １２ 薄板金属基板 １５ 上面 １６ 発光ダイオード素子 １７ 反射カップ部 １８ 底部 ２４ 第２の樹脂 ２５ 集光レンズ部 ２６ 第３の樹脂 ３５ 第１の樹脂 ３６ 反射カップ部の上端縁 DESCRIPTION OF SYMBOLS 11 Surface mount type light emitting diode 12 Thin metal substrate 15 Top surface 16 Light emitting diode element 17 Reflection cup part 18 Bottom part 24 Second resin 25 Condensing lens part 26 Third resin 35 First resin 36 Upper edge of reflection cup part
Claims (10)
成し、この反射カップ部の底部に発光ダイオード素子を
載置すると共に、反射カップ部内に波長変換用材料が混
入された第１の樹脂を充填して発光ダイオード素子をそ
の中に埋設し、さらに反射カップ部を含む薄板金属基板
の上部を集光レンズ部が形成された第２の樹脂で封止す
る一方、薄板金属基板の裏面側に第３の樹脂を充填した
ことを特徴とする表面実装型発光ダイオード。A first resin having a reflective cup formed on an upper surface of a thin metal substrate, a light emitting diode element mounted on a bottom of the reflective cup, and a wavelength conversion material mixed in the reflective cup. And the light emitting diode element is buried therein, and the upper portion of the thin metal substrate including the reflection cup portion is sealed with the second resin having the condensing lens portion formed thereon, while the back surface of the thin metal substrate is A surface-mounted light emitting diode, characterized in that a third resin is filled therein.
面を凹ませることによって形成されると共に、この凹み
によって薄板金属基板の裏面側にできた凹凸部に第３の
樹脂を充填して薄板金属基板を補強したことを特徴とす
る請求項１記載の表面実装型発光ダイオード。2. The reflection cup portion is formed by depressing an upper surface of a thin metal substrate, and the concave portion formed on the back surface side of the thin metal substrate is filled with a third resin by the depression to form a thin plate. The light emitting diode according to claim 1, wherein the metal substrate is reinforced.
射カップ部の上端縁より低いことを特徴とする請求項１
記載の表面実装型発光ダイオード。3. An upper surface of the filled first resin is lower than an upper edge of the reflection cup.
A surface-mounted light emitting diode as described.
材料が、蛍光染料又は蛍光顔料からなる蛍光物質である
ことを特徴とする請求項１記載の表面実装型発光ダイオ
ード。4. The surface-mounted light-emitting diode according to claim 1, wherein the wavelength conversion material mixed in the first resin is a fluorescent substance made of a fluorescent dye or a fluorescent pigment.
吸収剤のうち少なくとも一方が混入されていることを特
徴とする請求項１記載の表面実装型発光ダイオード。5. The surface-mounted light emitting diode according to claim 1, wherein at least one of a diffusing agent and an ultraviolet absorber is mixed in the second resin.
に形成したシリカ又はガラスフィラが混入されているこ
とを特徴とする請求項１記載の表面実装型発光ダイオー
ド。6. The surface-mounted light emitting diode according to claim 1, wherein the third resin is mixed with silica or glass filler formed in fine particles or powder.
ム系化合物半導体あるいはシリコンカーバイド系化合物
半導体からなる青色発光の素子であることを特徴とする
請求項１記載の表面実装型発光ダイオード。7. The surface-mounted light emitting diode according to claim 1, wherein the light emitting diode element is a blue light emitting element made of a gallium nitride-based compound semiconductor or a silicon carbide-based compound semiconductor.
以下の熱伝導性の優れた導電金属であることを特徴とす
る請求項１又は２に記載の表面実装型発光ダイオード。8. The thin metal substrate has a thickness of 0.5 mm.
The surface-mounted light-emitting diode according to claim 1, wherein the light-emitting diode is a conductive metal having the following excellent thermal conductivity.
プ部を形成すると共に、薄板金属基板に発光ダイオード
の両電極を形成するためのスリットを打抜くプレス工程
と、 薄板金属基板の裏面側にできた凹凸部に第３の樹脂を充
填して薄板金属基板を補強する第３の樹脂充填工程と、 薄板金属基板の反射カップ内に発光ダイオード素子を載
置して一方の電極に接続するダイボンド工程と、 発光ダイオード素子と前記スリットによって形成された
他方の電極とをボンディングワイヤで接続するワイヤボ
ンド工程と、 反射カップ部内に波長変換用材料が混入
された第１の樹脂を充填して発光ダイオード素子をその
中に埋設する第１の樹脂封止工程と、 反射カップ部を含む薄板金属基板の上部を第２の樹脂で
封止する第２の樹脂封止工程とを備えたことを特徴とす
る表面実装型発光ダイオードの製造方法。9. A pressing step of forming a reflection cup portion by recessing an upper surface of the thin metal substrate and punching a slit for forming both electrodes of a light emitting diode in the thin metal substrate; A third resin filling step of filling the uneven portion formed with the third resin to reinforce the thin metal substrate, and mounting the light emitting diode element in the reflection cup of the thin metal substrate and connecting to one electrode A die bonding step, a wire bonding step of connecting a light emitting diode element and the other electrode formed by the slit with a bonding wire, and filling a first resin mixed with a wavelength conversion material into a reflective cup to emit light. A first resin sealing step of embedding the diode element therein; and a second resin sealing step of sealing an upper portion of the thin metal substrate including the reflection cup portion with a second resin. Method for producing a surface-mount-type light-emitting diode, characterized in that.
金属基板からなる集合基板を形成し、 この集合基板に対して上記薄板金属基板を補強するため
の第３の樹脂充填工程、発光ダイオード素子のダイボン
ド工程、ワイヤボンド工程、第１の樹脂封止工程及び第
２の樹脂封止工程を行なったのち、 集合基板に想定された分割ラインに沿って集合基板を切
断し、一つ一つの発光ダイオード毎に分割することを特
徴とする請求項９記載の表面実装型発光ダイオードの製
造方法。10. A thin metal plate is pressed to form an aggregate substrate comprising a plurality of thin metal substrates, and a third resin filling step for reinforcing the thin metal substrate with respect to the aggregate substrate, a light emitting diode element After performing the die bonding step, the wire bonding step, the first resin sealing step, and the second resin sealing step, the collective substrate is cut along the dividing line assumed for the collective substrate, and each light emission is performed. The method for manufacturing a surface-mounted light emitting diode according to claim 9, wherein the light emitting diode is divided for each diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04789699A JP3447604B2 (en) | 1999-02-25 | 1999-02-25 | Surface mount type light emitting diode and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04789699A JP3447604B2 (en) | 1999-02-25 | 1999-02-25 | Surface mount type light emitting diode and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000252524A true JP2000252524A (en) | 2000-09-14 |
| JP3447604B2 JP3447604B2 (en) | 2003-09-16 |
Family
ID=12788176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04789699A Expired - Fee Related JP3447604B2 (en) | 1999-02-25 | 1999-02-25 | Surface mount type light emitting diode and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3447604B2 (en) |
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365922B1 (en) * | 2000-11-16 | 2002-04-02 | Harvatek Corp. | Focusing cup for surface mount optoelectronic diode package |
| WO2002089219A1 (en) * | 2001-04-17 | 2002-11-07 | Nichia Corporation | Light-emitting apparatus |
| JP2004207297A (en) * | 2002-12-24 | 2004-07-22 | Para Light Electronics Co Ltd | Method for manufacturing external heat sink structure of light emitting diode |
| WO2004082021A1 (en) * | 2003-03-12 | 2004-09-23 | Lednium Pty Ltd | A lamp and a process for producing a lamp |
| EP1276157A3 (en) * | 2001-06-27 | 2005-02-09 | Toyoda Gosei Co., Ltd. | Shielded reflective light-emitting device |
| JP2005317878A (en) * | 2004-04-30 | 2005-11-10 | Citizen Electronics Co Ltd | Photo-reflector device and its manufacturing method |
| GB2417824A (en) * | 2004-09-02 | 2006-03-08 | Custom Interconnect Ltd | LED light source |
| EP1358668A4 (en) * | 2001-01-31 | 2006-04-19 | Gentex Corp | Radiation emitter devices and method of making the same |
| JP2006278730A (en) * | 2005-03-29 | 2006-10-12 | Matsushita Electric Ind Co Ltd | Led-mounting board with reflecting member, its manufacturing method, and led module |
| JP2007281250A (en) * | 2006-04-07 | 2007-10-25 | Toshiba Corp | Semiconductor light emitting apparatus |
| US7300326B2 (en) * | 2004-11-10 | 2007-11-27 | Stanley Electric Co., Ltd. | LED device and method for manufacturing the same |
| US7320632B2 (en) | 2000-06-15 | 2008-01-22 | Lednium Pty Limited | Method of producing a lamp |
| US7352127B2 (en) | 2000-06-15 | 2008-04-01 | Lednium Pty Limited | LED lamp with light-emitting junction arranged in three-dimensional array |
| EP1906221A1 (en) * | 2006-09-28 | 2008-04-02 | Lg Electronics Inc. | Lens, manufacturing method thereof, and light emitting device package using the same |
| JP2008305811A (en) * | 2007-05-09 | 2008-12-18 | Mitsubishi Chemicals Corp | Substrate for fixing led chip and manufacturing method thereof |
| US7497596B2 (en) | 2001-12-29 | 2009-03-03 | Mane Lou | LED and LED lamp |
| US7704762B2 (en) | 2002-06-14 | 2010-04-27 | Lednium Technology Pty Limited | Lamp and method of producing a lamp |
| EP2317206A1 (en) * | 2009-10-27 | 2011-05-04 | Liang Meng Plastic Share Co. Ltd. | Illuminating device and method for manufacturing the same |
| EP1890332A3 (en) * | 2006-08-17 | 2011-12-28 | Robert Bosch GmbH | Illumination module and method for manufacturing an illumination module |
| JP2012039122A (en) * | 2010-08-09 | 2012-02-23 | Lg Innotek Co Ltd | Light emitting element |
| CN102042505B (en) * | 2009-10-13 | 2013-04-10 | 良盟塑胶股份有限公司 | Illuminating device and manufacturing method thereof |
| JP2013542617A (en) * | 2011-10-10 | 2013-11-21 | チェオル ジュ、ジャエ | LED package |
| JP2013542618A (en) * | 2011-10-10 | 2013-11-21 | チェオル ジュ、ジャエ | LED package manufacturing method |
| US8836210B2 (en) | 2005-02-18 | 2014-09-16 | Nichia Corporation | Light emitting device provided with lens for controlling light distribution characteristic |
| EP2551926A3 (en) * | 2011-07-26 | 2016-03-09 | Samsung Electronics Co., Ltd. | Light emitting diode module and method for manufacturing the same |
| JP2022086724A (en) * | 2020-11-30 | 2022-06-09 | 日亜化学工業株式会社 | Manufacturing method of light-emitting device |
| CN116435201A (en) * | 2023-06-12 | 2023-07-14 | 四川遂宁市利普芯微电子有限公司 | Plastic packaging method and device packaging structure |
| US12125953B2 (en) | 2020-11-30 | 2024-10-22 | Nichia Corporation | Method for manufacturing light emitting device, light emitting device, and light emitting module |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5367668B2 (en) | 2009-11-17 | 2013-12-11 | スタンレー電気株式会社 | Light emitting device and manufacturing method thereof |
-
1999
- 1999-02-25 JP JP04789699A patent/JP3447604B2/en not_active Expired - Fee Related
Cited By (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7352127B2 (en) | 2000-06-15 | 2008-04-01 | Lednium Pty Limited | LED lamp with light-emitting junction arranged in three-dimensional array |
| US7320632B2 (en) | 2000-06-15 | 2008-01-22 | Lednium Pty Limited | Method of producing a lamp |
| US6365922B1 (en) * | 2000-11-16 | 2002-04-02 | Harvatek Corp. | Focusing cup for surface mount optoelectronic diode package |
| EP1358668A4 (en) * | 2001-01-31 | 2006-04-19 | Gentex Corp | Radiation emitter devices and method of making the same |
| WO2002089219A1 (en) * | 2001-04-17 | 2002-11-07 | Nichia Corporation | Light-emitting apparatus |
| US7256468B2 (en) | 2001-04-17 | 2007-08-14 | Nichia Corporation | Light emitting device |
| US7019335B2 (en) | 2001-04-17 | 2006-03-28 | Nichia Corporation | Light-emitting apparatus |
| EP1276157A3 (en) * | 2001-06-27 | 2005-02-09 | Toyoda Gosei Co., Ltd. | Shielded reflective light-emitting device |
| US7736027B2 (en) | 2001-12-29 | 2010-06-15 | Mane Lou | LED and LED lamp |
| US7497596B2 (en) | 2001-12-29 | 2009-03-03 | Mane Lou | LED and LED lamp |
| US7704762B2 (en) | 2002-06-14 | 2010-04-27 | Lednium Technology Pty Limited | Lamp and method of producing a lamp |
| JP2004207297A (en) * | 2002-12-24 | 2004-07-22 | Para Light Electronics Co Ltd | Method for manufacturing external heat sink structure of light emitting diode |
| WO2004082021A1 (en) * | 2003-03-12 | 2004-09-23 | Lednium Pty Ltd | A lamp and a process for producing a lamp |
| JP2005317878A (en) * | 2004-04-30 | 2005-11-10 | Citizen Electronics Co Ltd | Photo-reflector device and its manufacturing method |
| GB2417824A (en) * | 2004-09-02 | 2006-03-08 | Custom Interconnect Ltd | LED light source |
| US7300326B2 (en) * | 2004-11-10 | 2007-11-27 | Stanley Electric Co., Ltd. | LED device and method for manufacturing the same |
| US8836210B2 (en) | 2005-02-18 | 2014-09-16 | Nichia Corporation | Light emitting device provided with lens for controlling light distribution characteristic |
| US9093619B2 (en) | 2005-02-18 | 2015-07-28 | Nichia Corporation | Light emitting device provided with lens for controlling light distribution characteristic |
| JP2006278730A (en) * | 2005-03-29 | 2006-10-12 | Matsushita Electric Ind Co Ltd | Led-mounting board with reflecting member, its manufacturing method, and led module |
| JP4629474B2 (en) * | 2005-03-29 | 2011-02-09 | パナソニック株式会社 | Mounting board for LED with reflecting member, manufacturing method thereof, and LED module |
| JP2007281250A (en) * | 2006-04-07 | 2007-10-25 | Toshiba Corp | Semiconductor light emitting apparatus |
| EP1890332A3 (en) * | 2006-08-17 | 2011-12-28 | Robert Bosch GmbH | Illumination module and method for manufacturing an illumination module |
| EP1906221A1 (en) * | 2006-09-28 | 2008-04-02 | Lg Electronics Inc. | Lens, manufacturing method thereof, and light emitting device package using the same |
| US7733573B2 (en) | 2006-09-28 | 2010-06-08 | Lg Electronics Inc. | Lens, manufacturing method thereof and light emitting device package using the same |
| JP2008305811A (en) * | 2007-05-09 | 2008-12-18 | Mitsubishi Chemicals Corp | Substrate for fixing led chip and manufacturing method thereof |
| CN102042505B (en) * | 2009-10-13 | 2013-04-10 | 良盟塑胶股份有限公司 | Illuminating device and manufacturing method thereof |
| EP2317206A1 (en) * | 2009-10-27 | 2011-05-04 | Liang Meng Plastic Share Co. Ltd. | Illuminating device and method for manufacturing the same |
| JP2012039122A (en) * | 2010-08-09 | 2012-02-23 | Lg Innotek Co Ltd | Light emitting element |
| US8399904B2 (en) | 2010-08-09 | 2013-03-19 | Lg Innotek Co., Ltd. | Light emitting device and lighting system having the same |
| CN102376853A (en) * | 2010-08-09 | 2012-03-14 | Lg伊诺特有限公司 | Light emitting device and lighting system having the same |
| EP2418702A3 (en) * | 2010-08-09 | 2012-07-25 | LG Innotek Co., Ltd. | Light emitting device and lighting system having the same |
| CN102376853B (en) * | 2010-08-09 | 2015-09-16 | Lg伊诺特有限公司 | Luminescent device and the illuminator with this luminescent device |
| EP2551926A3 (en) * | 2011-07-26 | 2016-03-09 | Samsung Electronics Co., Ltd. | Light emitting diode module and method for manufacturing the same |
| JP2013542617A (en) * | 2011-10-10 | 2013-11-21 | チェオル ジュ、ジャエ | LED package |
| JP2013542618A (en) * | 2011-10-10 | 2013-11-21 | チェオル ジュ、ジャエ | LED package manufacturing method |
| JP2022086724A (en) * | 2020-11-30 | 2022-06-09 | 日亜化学工業株式会社 | Manufacturing method of light-emitting device |
| JP7231846B2 (en) | 2020-11-30 | 2023-03-02 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
| US12125953B2 (en) | 2020-11-30 | 2024-10-22 | Nichia Corporation | Method for manufacturing light emitting device, light emitting device, and light emitting module |
| CN116435201A (en) * | 2023-06-12 | 2023-07-14 | 四川遂宁市利普芯微电子有限公司 | Plastic packaging method and device packaging structure |
| CN116435201B (en) * | 2023-06-12 | 2023-09-12 | 四川遂宁市利普芯微电子有限公司 | Plastic packaging method and device packaging structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3447604B2 (en) | 2003-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3447604B2 (en) | Surface mount type light emitting diode and method of manufacturing the same | |
| US7875897B2 (en) | Light emitting device | |
| JP4945106B2 (en) | Semiconductor light emitting device | |
| US6345903B1 (en) | Surface-mount type emitting diode and method of manufacturing same | |
| JP3349109B2 (en) | Surface mount type light emitting diode and method of manufacturing the same | |
| JP4254276B2 (en) | Light emitting device and manufacturing method thereof | |
| JP4182783B2 (en) | LED package | |
| US8013352B2 (en) | Chip coated light emitting diode package and manufacturing method thereof | |
| US7960819B2 (en) | Leadframe-based packages for solid state emitting devices | |
| EP1187226B1 (en) | Surface-mount type light emitting diode and method of manufacturing same | |
| TWI499097B (en) | Package structure and package process of light emitting diode | |
| JP4182784B2 (en) | Light emitting device and manufacturing method thereof | |
| JP2000058924A (en) | Surface mounting-type light emitting diode and its manufacture | |
| KR101766297B1 (en) | Light emitting device package and method of fabricating the same | |
| JP2011507228A (en) | LED package and method of manufacturing the same | |
| JP2009117536A (en) | Resin-sealed light emitter, and manufacturing method thereof | |
| JP3349111B2 (en) | Surface mount type light emitting diode and method of manufacturing the same | |
| KR20040075738A (en) | Light emitting apparatus | |
| JP2005093681A (en) | Light-emitting device | |
| JP3138795U (en) | Semiconductor light emitting device and planar light source using semiconductor light emitting device | |
| JP3492945B2 (en) | Light emitting diode | |
| JP2002324917A (en) | Surface mount light emitting diode and method of manufacturing the same | |
| JP2002319711A (en) | Surface mounting type light-emitting diode and method for manufacturing the same | |
| JP2000216443A (en) | Surface mounted type led and its manufacture | |
| JP2002314148A (en) | Surface mount type light emitting diode and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090704 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120704 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120704 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150704 Year of fee payment: 12 |
|
| LAPS | Cancellation because of no payment of annual fees |