JP2005317878A - Photo-reflector device and its manufacturing method - Google Patents

Photo-reflector device and its manufacturing method Download PDF

Info

Publication number
JP2005317878A
JP2005317878A JP2004136731A JP2004136731A JP2005317878A JP 2005317878 A JP2005317878 A JP 2005317878A JP 2004136731 A JP2004136731 A JP 2004136731A JP 2004136731 A JP2004136731 A JP 2004136731A JP 2005317878 A JP2005317878 A JP 2005317878A
Authority
JP
Japan
Prior art keywords
light
emitting element
resin
frame
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004136731A
Other languages
Japanese (ja)
Inventor
Yuichiro Tanda
祐一郎 反田
Kazuo Funakubo
一夫 舟久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to JP2004136731A priority Critical patent/JP2005317878A/en
Publication of JP2005317878A publication Critical patent/JP2005317878A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem of the warp of a substrate and a light-shielding frame, an inferior accuracy on a superposition, the deterioration of heat-dissipating properties or the like, in a photo-reflector device and a manufacturing method for the photo-reflector device detecting the presence of a substance to be detected or the place of the substance to be detected. <P>SOLUTION: A metallic reflecting frame 2 composed of an Al material, a Cu material or the like is loaded at the specified place of a collected circuit board 1A. A light-emitting element 3 is mounted on an inverted conical recessed-section base formed to the metallic reflecting frame 2, and the light-emitting element 3 and a photo-detector 4 are arranged and mounted in an array shape so as to be paired. The light-emitting element 3 and the photo-detector 4 are sealed with a light-transmitting thermosetting resin 5 so as to be coated. A linear trench 6 orthogonal by a half dicing is formed in a depth to the top face of the circuit board 1A so as to surround the light-emitting element 3 and the photo-detector 4 by the thermosetting resin 5. A liquid resin or paints, to which an additive such as visible-ray and infrared-ray screening agents or the like is added to the thermosetting resin, are made to flow into the linear trench 6. A resin frame 7 having a light-interference preventive function is formed, and the light-emitting element 3 and the photo-detector 4 are cut along an orthogonal specified cut line passing on the resin frame 7 so as to be paired, thus manufacturing a single photo-reflector device. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、被検出物の有無又は被検出物の位置を検出するフォトリフレクタ装置及びその製造方法に関するものである。   The present invention relates to a photoreflector device that detects the presence or absence of a detection object or the position of the detection object, and a manufacturing method thereof.

フォトリフレクタ装置は、非接触で物体の有無や物体の位置を検出する光センサであり、モータなどの回転の制御や紙、フイルム等の位置、端部の検出などに使用される。その一般的な構成及び原理を説明すると、遮光された発光素子と受光素子を有し、発光素子から照射された光が検知対象の物体に当たって反射され、その反射光を受光素子が検知する。これによって、フォトフレクタ装置の近傍における物体の有無や位置に応じて受光素子側の出力が変化し、これを検出信号として用いるものである。   The photo reflector device is an optical sensor that detects the presence / absence of an object and the position of the object in a non-contact manner, and is used for controlling the rotation of a motor and the like, detecting the position and edge of paper, film, and the like. The general configuration and principle will be described. The light-emitting element and the light-receiving element are shielded from light. The light emitted from the light-emitting element strikes an object to be detected and is reflected, and the light-receiving element detects the reflected light. As a result, the output on the light receiving element side changes according to the presence or absence and position of an object in the vicinity of the photoreflector device, and this is used as a detection signal.

しかし、従来知られているフォトフレクタ装置の例として、絶縁基板の上面に一対の発光素子と受光素子を実装し、発光素子と受光素子を囲むように遮光枠を配設した構造のものがある。（例えば、特許文献１参照）
特開２００１−１５６３２５号公報（第４頁、図１、２） 上記した特許文献１に開示されているフォトフレクタ装置は、図４及び図５に示すように、絶縁基板１１上の各一対の電極１２、１３及び１４、１５にＬＥＤ等の発光素子１６及びフォトトランジスタ又はフォトダイオードなどの受光素子１７が一対になって併置するようにダイボンド接着され、ボンディングワイヤ１８によりそれぞれワイヤボンディングされている。前記発光素子１６と受光素子１７の外周は薄膜コート樹脂１９によりコーティングされており、発光素子１６と受光素子１７が保護される。２０は、発光素子１６と受光素子１７の発光、受光方向を規制する機能を有し、発光素子１６と受光素子１７を囲むよに絶縁基板１１上に取り付けられる遮光性のプラスチックなどよりなる遮光枠である。この遮光枠２０は、発光素子１６と受光素子１７の発光、受光方向にそれぞれ設けられている窓部２０ａ、２０ｂと、発光素子１６と受光素子１７との間を遮光する中間遮光壁部２０ｃを有する。 However, as an example of a conventionally known photo reflector device, there is a structure in which a pair of light emitting elements and a light receiving element are mounted on an upper surface of an insulating substrate, and a light shielding frame is disposed so as to surround the light emitting element and the light receiving element. . (For example, see Patent Document 1)
JP, 2001-156325, A (the 4th page, Drawings 1 and 2) As shown in Drawing 4 and Drawing 5, the photo reflector device currently indicated by above-mentioned patent documents 1 is a pair of each on insulating substrate 11, respectively. A light emitting element 16 such as an LED and a light receiving element 17 such as a phototransistor or a photodiode are bonded to the electrodes 12, 13, 14, and 15 by die bonding, and are bonded by bonding wires 18. The outer periphery of the light emitting element 16 and the light receiving element 17 is coated with a thin film coating resin 19 to protect the light emitting element 16 and the light receiving element 17. 20 has a function of regulating the light emission and light receiving direction of the light emitting element 16 and the light receiving element 17, and a light shielding frame made of a light shielding plastic or the like attached on the insulating substrate 11 so as to surround the light emitting element 16 and the light receiving element 17. It is. The light shielding frame 20 includes windows 20a and 20b provided in the light emitting and light receiving directions of the light emitting element 16 and the light receiving element 17, respectively, and an intermediate light shielding wall 20c that shields light between the light emitting element 16 and the light receiving element 17. Have.

解決しようとする問題点は、フォトフレクタ装置を製作するには、絶縁基板１１の上に、成形型を用いて遮光性樹脂のモールド加工により遮光枠２０を一体として形成して固定すし、その後、所定位置に発光素子１６と受光素子１７をボンディングにより、絶縁基板１１への固着及び電極への電気的接続を行っている。絶縁基板１１と遮光枠２０の樹脂の熱膨張係数が異なるため、反りなどが発生する。また、絶縁基板１１と遮光枠２０の重ね合わせの位置精度にズレを生じ遮光性が悪い。更に、発光素子１６を絶縁基板１１の上に直接ダイボンドするため放熱性が悪い等、フォトフレクタ装置の信頼性に大きな問題があった。   The problem to be solved is that, in order to manufacture the photo reflector device, the light shielding frame 20 is integrally formed and fixed on the insulating substrate 11 by molding the light shielding resin on the insulating substrate 11, The light-emitting element 16 and the light-receiving element 17 are bonded to a predetermined position and bonded to the insulating substrate 11 and electrically connected to the electrodes. Since the thermal expansion coefficients of the resin of the insulating substrate 11 and the light shielding frame 20 are different, warping or the like occurs. Further, the positional accuracy of the overlapping of the insulating substrate 11 and the light shielding frame 20 is shifted and the light shielding property is poor. Furthermore, since the light emitting element 16 is directly die-bonded on the insulating substrate 11, there is a serious problem in the reliability of the photoreflector device, such as poor heat dissipation.

上記課題を解決するために、本発明におけるフォトリフレクタ装置は、平面が略長方形形状をし、その上面に所定の導電パターンを、下面に外部接続用電極を形成し、前記上下電極をスルーホール電極を介して接続する回路基板と、該回路基板の上面側に、発光素子及び受光素子を実装し、該発光素子及び受光素子を保護する保護手段を有し、前記両素子間に光干渉防止機能を具備したフォトリフレクタ装置において、前記回路基板上の所定位置に金属系反射枠を搭載し、該金属系反射枠に形成された逆円錐形状の凹部底面に前記発光素子を実装すると共に、前記回路基板上の所定位置に受光素子が、前記発光素子と一対になるように配置・実装し、該発光素子と受光素子を覆うように透光性の熱硬化系樹脂で樹脂封止すると共に、前記両素子を取り囲むように光干渉防止機能を具備した樹脂枠を配設したことを特徴とするものである。   In order to solve the above problems, a photoreflector device according to the present invention has a substantially rectangular plane, a predetermined conductive pattern on the upper surface, an external connection electrode on the lower surface, and the upper and lower electrodes as through-hole electrodes. A light-emitting element and a light-receiving element on the upper surface side of the circuit board, and protective means for protecting the light-emitting element and the light-receiving element. In the photoreflector device having the above structure, a metal-based reflecting frame is mounted at a predetermined position on the circuit board, and the light-emitting element is mounted on a bottom surface of an inverted conical recess formed in the metal-based reflecting frame. A light receiving element is arranged and mounted at a predetermined position on the substrate so as to be paired with the light emitting element, and is sealed with a light-transmitting thermosetting resin so as to cover the light emitting element and the light receiving element. Both elements It is characterized in that it has provided a resin frame provided with the light interference prevention function so as to surround the.

また、前記金属系反射枠は、Ａｌ材又はＣｕ材またはその合金よりなる高放熱材であることを特徴とするものである。   Further, the metal-based reflective frame is a high heat dissipation material made of an Al material, a Cu material or an alloy thereof.

また、前記枠樹脂は、熱硬化系樹脂に可視光と赤外光カット剤を添加した樹脂であることを特徴とするものである。   The frame resin is a resin obtained by adding visible light and an infrared light cut agent to a thermosetting resin.

また、平面が略長方形形状をし、その上面に所定の導電パターンを、下面に外部接続用電極を形成し、前記上下電極をスルーホール電極を介して接続する回路基板と、該回路基板の上面側に、発光素子及び受光素子を実装し、該発光素子及び受光素子を保護する保護手段を有し、前記両素子間に光干渉防止機能を具備したフォトリフレクタ装置の製造方法において、多数個取りする集合回路基板の所定位置にＡｌ材又はＣｕ材またはその合金よりなる金属系反射枠を搭載し、該金属系反射枠に形成された逆円錐形状の凹部底面に前記発光素子を実装すると共に、前記集合回路基板上の所定位置に受光素子が、前記発光素子と一対になるようにアレイ状に配置・実装し、該発光素子と受光素子を覆うように透光性の熱硬化系樹脂で樹脂封止すると共に、該封止樹脂に、前記発光素子と受光素子を取り囲むように、前記集合回路基板の上面に達する深さで、ハーフダィシングによる直交する線状溝を形成し、該線状溝に熱硬化系樹脂に可視光と赤外光カット剤を添加した液状樹脂又は塗料を流し込み、光干渉防止機能を具備した樹脂枠を形成した後、前記発光素子と受光素子が一対になるように、前記樹脂枠上を通る直交する所定のカットラインに沿って切断することにより、単個のフォトリフレクタ装置を形成したことを特徴とするものである。   Further, the plane has a substantially rectangular shape, a predetermined conductive pattern is formed on the upper surface, an external connection electrode is formed on the lower surface, and the upper and lower electrodes are connected via a through-hole electrode, and the upper surface of the circuit substrate In a method of manufacturing a photoreflector device having a light-emitting element and a light-receiving element mounted on the side, and having a protective means for protecting the light-emitting element and the light-receiving element, and having an optical interference prevention function between the two elements, A metal-based reflective frame made of Al material or Cu material or an alloy thereof is mounted at a predetermined position of the collective circuit board, and the light-emitting element is mounted on the bottom surface of the inverted conical recess formed in the metal-based reflective frame, A light receiving element is arranged and mounted in an array so as to be paired with the light emitting element at a predetermined position on the collective circuit board, and is made of a light-transmitting thermosetting resin so as to cover the light emitting element and the light receiving element. Seal In the sealing resin, orthogonal linear grooves are formed by half dicing at a depth reaching the upper surface of the collective circuit board so as to surround the light emitting element and the light receiving element, and a thermosetting system is formed in the linear grooves. After pouring a liquid resin or paint with visible light and infrared light cutting agent added into the resin to form a resin frame having a light interference prevention function, the resin frame is arranged so that the light emitting element and the light receiving element are paired. A single photo reflector device is formed by cutting along a predetermined orthogonal cut line passing above.

本発明のフォトリフレクタ装置は、発光素子を金属系反射枠に形成された逆円錐形状の凹部底面に実装するため、放熱特性、光出力効率、光路制御（光干渉防止）、回路基板への光漏れ防止に優れている。   In the photo reflector device of the present invention, the light emitting element is mounted on the bottom surface of the concave portion of the inverted conical shape formed on the metal-based reflective frame, so that heat dissipation characteristics, light output efficiency, optical path control (light interference prevention), light to the circuit board Excellent leakage prevention.

また、枠樹脂が封止樹脂と同系の樹脂を使用しているため、信頼性劣化（剥離など）を抑えることができる。   Further, since the frame resin uses the same resin as the sealing resin, it is possible to suppress deterioration of reliability (such as peeling).

また、従来、成形型を使用して加工していた遮光枠は不要になり、従って、その取り付け作業がなくなり、コストダウンになる。   In addition, the shading frame that has been conventionally processed by using a mold becomes unnecessary, and therefore, the mounting work is eliminated and the cost is reduced.

また、本発明のフォトリフレクタ装置の製造方法は、多数個取りの集合回路基板で生産できるので、量産性に優れている。   In addition, the method of manufacturing a photoreflector device according to the present invention can be produced on a multi-piece collective circuit board, and thus is excellent in mass productivity.

以上述べたように、作業性、電気的特性、放熱性に優れたフォトリフレクタ装置及びその製造方法を提供することが可能である。   As described above, it is possible to provide a photo reflector device excellent in workability, electrical characteristics, and heat dissipation, and a method for manufacturing the photo reflector device.

本発明のフォトリフレクタ装置について、図面に基づいて説明する。   The photo reflector device of the present invention will be described with reference to the drawings.

図１及び図２は、本発明の実施例に係わり、図１は、フォトリフレクタ装置の断面図（図２のA−A線断面）、図２は、図１の平面図である。図１及び図２において、１はガラスエポキシ樹脂などよりなる平面が略長方形形状をした絶縁性を有する回路基板で、その上面には図示しない所定の導電パターンと、下面には外部接続用電極と、前記上下面電極を接続するスルーホール電極が形成されている。該回路基板１の上面側の所定位置に、Ａｌ材又はＣｕ材またはその合金よりなる高放熱材である金属系反射枠２が搭載されている。   1 and 2 relate to an embodiment of the present invention. FIG. 1 is a cross-sectional view of the photoreflector device (a cross section along line AA in FIG. 2), and FIG. 2 is a plan view of FIG. 1 and 2, reference numeral 1 denotes an insulating circuit board having a substantially rectangular shape made of glass epoxy resin or the like, and has a predetermined conductive pattern (not shown) on its upper surface and an external connection electrode on its lower surface. A through-hole electrode for connecting the upper and lower surface electrodes is formed. At a predetermined position on the upper surface side of the circuit board 1, a metal-based reflective frame 2 that is a high heat dissipation material made of an Al material, a Cu material, or an alloy thereof is mounted.

前記金属系反射枠２に形成された逆円錐形状の凹部底面に、高速赤外ＬＥＤからなる発光素子３を実装すると共に、前記回路基板１上の所定位置に、フォトトランジスタ又はフォトダイオードからなる受光素子４を実装しており、図示しない導電パターンにダイボンド接着され、金属細線８でワイヤーボンディングされ電気的に接続されている。   A light emitting element 3 made of a high-speed infrared LED is mounted on the bottom surface of the inverted conical recess formed in the metal-based reflective frame 2, and light reception made of a phototransistor or a photodiode is placed at a predetermined position on the circuit board 1. The element 4 is mounted, die-bonded to a conductive pattern (not shown), and wire-bonded with a thin metal wire 8 to be electrically connected.

前記発光素子３と受光素子４を覆うように、可視光カット剤入りエポキシ系の透光性の熱硬化系樹脂５で樹脂封止する。該熱硬化系樹脂５には、前記発光素子３と受光素子４の間で、両素子３、４を取り囲むように、ハーフダイシングにより前記回路基板１の上面に達する深さの線状溝６が形成されている。   Resin sealing is performed with an epoxy-based translucent thermosetting resin 5 containing a visible light cut agent so as to cover the light-emitting element 3 and the light-receiving element 4. The thermosetting resin 5 has a linear groove 6 having a depth reaching the upper surface of the circuit board 1 by half dicing so as to surround both the elements 3 and 4 between the light emitting element 3 and the light receiving element 4. Is formed.

前記線状溝６に、予め、前記熱硬化系樹脂５に、可視・赤外光の波長カット機能を有する添加剤を混ぜ込んだ液状樹脂又は塗料を流し込み枠樹脂７が形成されている。該樹脂枠７は、前記発光素子３より出射された赤外光が横方向から漏れて熱硬化系樹脂５中を通って受光素子４間に伝播するのを防ぐ、光干渉防止機能を有するものである。   A frame resin 7 is formed in the linear groove 6 by pouring a liquid resin or a paint in which an additive having a visible / infrared wavelength cut function is mixed into the thermosetting resin 5 in advance. The resin frame 7 has an optical interference preventing function for preventing infrared light emitted from the light emitting element 3 from leaking from the lateral direction and propagating between the light receiving elements 4 through the thermosetting resin 5. It is.

前記金属系反射枠２は、逆円錐形状の反射面により、発光素子３の光出力効率を高め、部材はＡｌ材又はＣｕ材またはその合金よりなる高放熱材であることから、放熱性を高めるものである。   The metal-based reflective frame 2 increases the light output efficiency of the light-emitting element 3 due to the inverted conical reflection surface, and the member is a high heat dissipation material made of an Al material, a Cu material, or an alloy thereof, thereby improving heat dissipation. Is.

封止樹脂である熱硬化系樹脂５と樹脂枠７が共に同系の樹脂を使用するので、剥離などを抑え信頼性劣化を抑えるものである。   Since both the thermosetting resin 5 and the resin frame 7 which are sealing resins use the same resin, peeling and the like are suppressed and reliability deterioration is suppressed.

次に、フォトリフレクタ装置の製造方法について説明する。図３（ａ）において、多数個取りする集合回路基板１Ａの所定位置にＡｌ材又はＣｕ材またはその合金よりなる金属系反射枠２を搭載した後、該金属系反射枠２に形成された逆円錐形状の凹部底面に発光素子３を実装すると共に、前記集合回路基板１Ａ上の所定位置に前記発光素子３と一対になるように受光素子４をアレイ状に配置・実装する。金属細線８でワイヤーボンディングされ電気的に接続する。   Next, a method for manufacturing the photo reflector device will be described. In FIG. 3A, after mounting a metal-based reflective frame 2 made of an Al material, a Cu material, or an alloy thereof at a predetermined position of a collective circuit board 1A to be taken, the reverse formed on the metal-based reflective frame 2 The light emitting element 3 is mounted on the bottom surface of the conical recess, and the light receiving elements 4 are arranged and mounted in an array so as to be paired with the light emitting element 3 at a predetermined position on the collective circuit board 1A. It is wire-bonded with a fine metal wire 8 and electrically connected.

図３（ｂ）において、前記発光素子３と受光素子４の上面を覆うように、トランスファーモールド等で透光性の可視光カット剤含有の熱硬化系樹脂５で樹脂封止する。   In FIG. 3B, the resin is sealed with a thermosetting resin 5 containing a translucent visible light cut agent by a transfer mold or the like so as to cover the upper surfaces of the light emitting element 3 and the light receiving element 4.

図３（ｃ）において、前記熱硬化系樹脂５に、前記発光素子３と受光素子４の列間で前記集合回路基板１の上面に達する深さで、ハーフダィシングによる直交する線状溝６を形成する。直交する複数の線状溝６は、樹脂封止する際に金型を使用して形成しても良い。   In FIG. 3 (c), orthogonal linear grooves 6 are formed in the thermosetting resin 5 by half dicing at a depth reaching the upper surface of the collective circuit board 1 between the rows of the light emitting elements 3 and the light receiving elements 4. To do. The plurality of orthogonal linear grooves 6 may be formed using a mold when resin-sealing.

図３（ｄ）、（ｅ）において、前記線状溝６に、予め波長カット機能を有する、熱硬化系樹脂に可視光と赤外光カット剤を添加した液状樹脂又は塗料を流し込み、毛細管現象で線状溝６全体に行き渡るようにして枠樹脂７を形成する。その後、前記発光素子３と受光素子４が一対になるように、前記樹脂枠７上を通る直交する所定のカットラインX 、Ｙに沿って切断する。以上の工程により、単個のフォトリフレクタ装置を多数個取り生産することができる。   3 (d) and 3 (e), the linear groove 6 is poured with a liquid resin or paint in which visible light and an infrared light cut agent are added to a thermosetting resin having a wavelength cutting function in advance, and capillary action is caused. Thus, the frame resin 7 is formed so as to spread over the entire linear groove 6. Thereafter, the light-emitting element 3 and the light-receiving element 4 are cut along predetermined orthogonal cut lines X and Y passing through the resin frame 7 so as to form a pair. Through the above steps, a large number of single photo reflector devices can be produced.

以上述べたフォトリフレクタ装置の製造方法により、別体の遮光用成形品を必要としないで、遮光枠（樹脂枠）を設けた多数個取り生産ができるフォトリフレクタ装置の製作が可能である。   According to the manufacturing method of the photoreflector device described above, it is possible to manufacture a photoreflector device that can be manufactured in a large number of pieces with a light-shielding frame (resin frame) without requiring a separate light-shielding molded product.

本発明の実施例に係わるフォトリフレクタ装置の断面図である。It is sectional drawing of the photoreflector apparatus concerning the Example of this invention. 図１のフォトリフレクタ装置の平面図である。It is a top view of the photo reflector device of FIG. 本発明の実施例に係わるフォトリフレクタ装置の製造方法を示す説明図である。It is explanatory drawing which shows the manufacturing method of the photo reflector apparatus concerning the Example of this invention. 従来技術に係わるフォトリフレクタ装置の斜視図である。It is a perspective view of the photo reflector apparatus concerning a prior art. 図４のＢ―Ｂ線断面図である。FIG. 5 is a sectional view taken along line BB in FIG. 4.

符号の説明Explanation of symbols

１ 回路基板
１Ａ 集合回路基板
２ 金属系反射枠
３ 発光素子
４ 受光素子
５ 熱硬化系樹脂
６ 線状溝
７ 枠樹脂
Ｘ、Ｙ カットライン

DESCRIPTION OF SYMBOLS 1 Circuit board 1A Collective circuit board 2 Metal-type reflective frame 3 Light emitting element 4 Light receiving element 5 Thermosetting resin 6 Linear groove 7 Frame resin X, Y Cut line

Claims (4)

平面が略長方形形状をし、その上面に所定の導電パターンを、下面に外部接続用電極を形成し、前記上下電極をスルーホール電極を介して接続する回路基板と、該回路基板の上面側に、発光素子及び受光素子を実装し、該発光素子及び受光素子を保護する保護手段を有し、前記両素子間に光干渉防止機能を具備したフォトリフレクタ装置において、前記回路基板上の所定位置に金属系反射枠を搭載し、該金属系反射枠に形成された逆円錐形状の凹部底面に前記発光素子を実装すると共に、前記回路基板上の所定位置に受光素子が、前記発光素子と一対になるように配置・実装し、該発光素子と受光素子を覆うように透光性の熱硬化系樹脂で樹脂封止すると共に、前記両素子を取り囲むように光干渉防止機能を具備した樹脂枠を配設したことを特徴とするフォトリフレクタ装置。   The plane has a substantially rectangular shape, a predetermined conductive pattern is formed on the upper surface, an external connection electrode is formed on the lower surface, and the upper and lower electrodes are connected via a through-hole electrode, and on the upper surface side of the circuit substrate In the photoreflector device having a protective means for mounting the light emitting element and the light receiving element, protecting the light emitting element and the light receiving element, and having an optical interference prevention function between the two elements, the photo reflector device is provided at a predetermined position on the circuit board. A metal-based reflection frame is mounted, and the light-emitting element is mounted on the bottom surface of the inverted conical recess formed in the metal-based reflection frame, and the light-receiving element is paired with the light-emitting element at a predetermined position on the circuit board. A resin frame having a light interference prevention function so as to surround the light emitting element and the light receiving element and encapsulate with a light-transmitting thermosetting resin so as to cover the light emitting element and the light receiving element. That it was arranged Photo reflector device and butterflies. 前記金属系反射枠は、Ａｌ材又はＣｕ材またはその合金よりなる高放熱材であることを特徴とする請求項１記載のフォトリフレクタ装置。   The photoreflector device according to claim 1, wherein the metal-based reflection frame is a high heat dissipation material made of an Al material, a Cu material, or an alloy thereof. 前記枠樹脂は、熱硬化系樹脂に可視光と赤外光カット剤を添加した樹脂であることを特徴とする請求項１記載のフォトリフレクタ装置。   The photo reflector device according to claim 1, wherein the frame resin is a resin obtained by adding visible light and an infrared light cutting agent to a thermosetting resin. 平面が略長方形形状をし、その上面に所定の導電パターンを、下面に外部接続用電極を形成し、前記上下電極をスルーホール電極を介して接続する回路基板と、該回路基板の上面側に、発光素子及び受光素子を実装し、該発光素子及び受光素子を保護する保護手段を有し、前記両素子間に光干渉防止機能を具備したフォトリフレクタ装置の製造方法において、多数個取りする集合回路基板の所定位置にＡｌ材又はＣｕ材またはその合金よりなる金属系反射枠を搭載し、該金属系反射枠に形成された逆円錐形状の凹部底面に前記発光素子を実装すると共に、前記集合回路基板上の所定位置に受光素子が、前記発光素子と一対になるようにアレイ状に配置・実装し、該発光素子と受光素子を覆うように透光性の熱硬化系樹脂で樹脂封止すると共に、該封止樹脂に、前記発光素子と受光素子を取り囲むように、前記集合回路基板の上面に達する深さで、ハーフダィシングによる直交する線状溝を形成し、該線状溝に熱硬化系樹脂に可視光と赤外光カット剤を添加した液状樹脂又は塗料を流し込み、光干渉防止機能を具備した樹脂枠を形成した後、前記発光素子と受光素子が一対になるように、前記樹脂枠上を通る直交する所定のカットラインに沿って切断することにより、単個のフォトリフレクタ装置を形成したことを特徴とするフォトリフレクタ装置の製造方法。
The plane has a substantially rectangular shape, a predetermined conductive pattern is formed on the upper surface, an external connection electrode is formed on the lower surface, and the upper and lower electrodes are connected via a through-hole electrode, and on the upper surface side of the circuit substrate In a method of manufacturing a photoreflector device having a light-emitting element and a light-receiving element, having a protection means for protecting the light-emitting element and the light-receiving element, and having an optical interference prevention function between the two elements, A metal-based reflective frame made of an Al material, a Cu material, or an alloy thereof is mounted at a predetermined position on the circuit board, and the light emitting element is mounted on the bottom surface of the inverted conical recess formed in the metal-based reflective frame. A light receiving element is arranged and mounted in a predetermined position on the circuit board in an array so as to be paired with the light emitting element, and resin-sealed with a translucent thermosetting resin so as to cover the light emitting element and the light receiving element As well as An orthogonal linear groove is formed by half dicing at a depth reaching the upper surface of the collective circuit board so as to surround the light emitting element and the light receiving element in the sealing resin, and the thermosetting resin is formed in the linear groove. After pouring liquid resin or paint with visible light and infrared light cutting agent added to form a resin frame having a light interference prevention function, the light emitting element and the light receiving element are paired on the resin frame. A method of manufacturing a photo reflector device, characterized in that a single photo reflector device is formed by cutting along a predetermined orthogonal cut line.
JP2004136731A 2004-04-30 2004-04-30 Photo-reflector device and its manufacturing method Pending JP2005317878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004136731A JP2005317878A (en) 2004-04-30 2004-04-30 Photo-reflector device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004136731A JP2005317878A (en) 2004-04-30 2004-04-30 Photo-reflector device and its manufacturing method

Publications (1)

Publication Number Publication Date
JP2005317878A true JP2005317878A (en) 2005-11-10

Family

ID=35444955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004136731A Pending JP2005317878A (en) 2004-04-30 2004-04-30 Photo-reflector device and its manufacturing method

Country Status (1)

Country Link
JP (1) JP2005317878A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201360A (en) * 2006-01-30 2007-08-09 Citizen Electronics Co Ltd Photo-reflector device
JP2008028025A (en) * 2006-07-19 2008-02-07 Canon Inc Reflecting sensor
GB2433837B (en) * 2005-12-06 2008-12-17 Enfis Ltd Improved LED array
JP2010114196A (en) * 2008-11-05 2010-05-20 Rohm Co Ltd Reflection-type photointerrupter
US7871216B2 (en) * 2005-12-19 2011-01-18 Brother Kogyo Kabushiki Kaisha Medium supporting member and image forming apparatus
CN102157510A (en) * 2010-02-12 2011-08-17 亿光电子工业股份有限公司 Contact sensor packaging structure and manufacture method thereof
JP2013070078A (en) * 2012-11-21 2013-04-18 Canon Inc Reflection type sensor
CN103681649A (en) * 2012-09-06 2014-03-26 力祥半导体股份有限公司 Proximity sensor package and packaging method thereof
CN108735764A (en) * 2017-04-18 2018-11-02 金佶科技股份有限公司 Taken module and its manufacturing method
JP2019009301A (en) * 2017-06-26 2019-01-17 京セラ株式会社 Substrate for optical sensor and optical sensor module
TWI808691B (en) * 2022-03-22 2023-07-11 神煜電子股份有限公司 Optical sensor package assembly

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH118415A (en) * 1997-06-13 1999-01-12 Citizen Electron Co Ltd Infrared data communication module
JPH11289105A (en) * 1998-04-03 1999-10-19 Citizen Electronics Co Ltd Photoreflector and manufacture thereof
JP2000252524A (en) * 1999-02-25 2000-09-14 Citizen Electronics Co Ltd Surface mount light emitting diode and manufacture thereof
JP2004071922A (en) * 2002-08-08 2004-03-04 Citizen Electronics Co Ltd Manufacturing method of infrared light emitting and receiving module

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH118415A (en) * 1997-06-13 1999-01-12 Citizen Electron Co Ltd Infrared data communication module
JPH11289105A (en) * 1998-04-03 1999-10-19 Citizen Electronics Co Ltd Photoreflector and manufacture thereof
JP2000252524A (en) * 1999-02-25 2000-09-14 Citizen Electronics Co Ltd Surface mount light emitting diode and manufacture thereof
JP2004071922A (en) * 2002-08-08 2004-03-04 Citizen Electronics Co Ltd Manufacturing method of infrared light emitting and receiving module

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2433837B (en) * 2005-12-06 2008-12-17 Enfis Ltd Improved LED array
US7871216B2 (en) * 2005-12-19 2011-01-18 Brother Kogyo Kabushiki Kaisha Medium supporting member and image forming apparatus
JP2007201360A (en) * 2006-01-30 2007-08-09 Citizen Electronics Co Ltd Photo-reflector device
JP2008028025A (en) * 2006-07-19 2008-02-07 Canon Inc Reflecting sensor
JP2010114196A (en) * 2008-11-05 2010-05-20 Rohm Co Ltd Reflection-type photointerrupter
WO2011098036A1 (en) * 2010-02-12 2011-08-18 亿广科技(上海)有限公司 Proximity sensor packaging structure and manufacturing method thereof
CN102157510A (en) * 2010-02-12 2011-08-17 亿光电子工业股份有限公司 Contact sensor packaging structure and manufacture method thereof
CN103681649A (en) * 2012-09-06 2014-03-26 力祥半导体股份有限公司 Proximity sensor package and packaging method thereof
TWI476907B (en) * 2012-09-06 2015-03-11 Ubiq Semiconductor Corp Proximity sensor packaging object and packaging method thereof
JP2013070078A (en) * 2012-11-21 2013-04-18 Canon Inc Reflection type sensor
CN108735764A (en) * 2017-04-18 2018-11-02 金佶科技股份有限公司 Taken module and its manufacturing method
JP2019009301A (en) * 2017-06-26 2019-01-17 京セラ株式会社 Substrate for optical sensor and optical sensor module
TWI808691B (en) * 2022-03-22 2023-07-11 神煜電子股份有限公司 Optical sensor package assembly

Similar Documents

Publication Publication Date Title
JP4349978B2 (en) Optical semiconductor package and manufacturing method thereof
TWI657603B (en) Semiconductor package device and method of manufacturing the same
EP1351319A2 (en) Package for optical semiconductor
US20070108561A1 (en) Image sensor chip package
US20110002587A1 (en) Housing for an Optoelectronic Component and Arrangement of an Optoelectronic Component in a Housing
KR20120101374A (en) Optoelectronic devices with laminate leadless carrier packaging in side-looker or top-looker device orientation
CN101159279A (en) Semiconductor image sensor die and production method thereof, semiconductor image sensor module, image sensor device, optical device element, and optical device module
JP5069996B2 (en) Manufacturing method of photo reflector
JP2007201360A (en) Photo-reflector device
JP2005317878A (en) Photo-reflector device and its manufacturing method
JP6312872B2 (en) Light source integrated light sensor
KR101457500B1 (en) Proximity ambient light sensor and its manufacturing method
JP2007109851A (en) Photo interrupter
CN112635505A (en) Packaging structure and packaging method
JP5164733B2 (en) Optical semiconductor device and manufacturing method thereof
JP4851706B2 (en) Photo reflector device with slit
JP5255950B2 (en) Manufacturing method of optical semiconductor device
CN213936192U (en) Packaging structure
KR102459822B1 (en) semiconductor device
WO2014054083A1 (en) Semiconductor device, semiconductor device, proximity sensor equipped with same, and semiconductor device manufacturing method
JP2017032471A (en) Optical sensor
US7750288B2 (en) Method of making an optoelectronic module and optoelectronic module obtained by such method
JP2008226969A (en) Optical communication module
CN219959006U (en) Optical sensing device
JP7381961B2 (en) Optical module and optical encoder

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070412

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081126

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081210

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090202

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100121

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100302

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101005