JP5069996B2 - Manufacturing method of photo reflector - Google Patents

Manufacturing method of photo reflector Download PDF

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JP5069996B2
JP5069996B2 JP2007259646A JP2007259646A JP5069996B2 JP 5069996 B2 JP5069996 B2 JP 5069996B2 JP 2007259646 A JP2007259646 A JP 2007259646A JP 2007259646 A JP2007259646 A JP 2007259646A JP 5069996 B2 JP5069996 B2 JP 5069996B2
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light
substrate
light emitting
electrode pattern
light receiving
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JP2009088435A (en
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一夫 舟久保
昭 渡辺
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Citizen Electronics Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Description

本発明は、発光素子と受光素子を備え、非接触で被検出物を検出するフォトリフレクタの製造方法に関するものである。 The present invention includes a light emitting element and a light receiving element, a manufacturing method of Photoreflectance data for detecting an object to be detected without contact.

従来、この種のフォトリフレクタとしては、図9及び図10に示すものが知られている。このフォトリフレクタ16は、電極パターン18が設けられた基板20に発光素子22と受光素子24を取り付け、この発光素子22と受光素子24の周囲を囲むとともに、その素子間を仕切るようにして遮光する遮光枠体26を基板20上に設けたものであった(特許文献1参照)。このフォトリフレクタ16においては、発光素子22と受光素子24がより接近するように片寄せ配置し、遮光枠体26の外周壁26aにより外部からの光を遮光するとともに、中間壁26bにより素子間における光を遮光するように構成されている。   Conventionally, as this type of photo reflector, those shown in FIGS. 9 and 10 are known. The photo reflector 16 has a light emitting element 22 and a light receiving element 24 attached to a substrate 20 on which an electrode pattern 18 is provided. The photo reflector 16 surrounds the light emitting element 22 and the light receiving element 24 and shields the light from the elements. The light shielding frame 26 is provided on the substrate 20 (see Patent Document 1). In the photo reflector 16, the light emitting element 22 and the light receiving element 24 are arranged so as to be closer to each other, light from the outside is shielded by the outer peripheral wall 26a of the light shielding frame 26, and between the elements by the intermediate wall 26b. It is configured to shield light.

通常、上記フォトリフレクタ16における基板20には、この種の回路基板に広く使用されているFR4等のガラスエポキシ樹脂やBTレジン等からなる基板が使用されている。このような材質からなる基板20を用いると、この基板20が光をある程度透過させてしまうとともに、この基板20内を光が伝わることがある。このように、基板20を光が透過又はその内部を伝わると、その光を受光素子24が検知して誤動作を起こすという問題があった。特に、極小サイズのフォトリフレクタの場合、上記問題はより顕著に現われることになり、わずかな光の漏れも防ぐことが必要であった。   Usually, the substrate 20 in the photoreflector 16 is a substrate made of glass epoxy resin such as FR4 or BT resin widely used for this type of circuit board. When the substrate 20 made of such a material is used, the substrate 20 may transmit light to some extent and light may be transmitted through the substrate 20. As described above, when light is transmitted through the substrate 20 or transmitted through the substrate 20, the light receiving element 24 detects the light and causes a malfunction. In particular, in the case of an extremely small size photo reflector, the above problem appears more remarkably, and it is necessary to prevent slight light leakage.

このような基板上における光漏れを防止するため、本件出願人は図11に示すように、基板3の表面に発光素子2と受光素子4との間に溝状の凹部3aを設け、この凹部3a内に前記発光素子2及び受光素子4をそれぞれ封止する透光性の封止部材6,8との間を仕切るとともに、基板3の外周面に沿って囲われる遮光部材10の一部を嵌め込んだ構造のフォトリフレクタ1を提案した(特許文献2参照)。
特開2001−156325号公報 特開2007−13050号公報
In order to prevent such light leakage on the substrate, the present applicant provides a groove-like recess 3a between the light emitting element 2 and the light receiving element 4 on the surface of the substrate 3 as shown in FIG. The light-transmitting sealing members 6 and 8 that seal the light-emitting element 2 and the light-receiving element 4 in the 3a are partitioned, and a part of the light-shielding member 10 surrounded by the outer peripheral surface of the substrate 3 is formed. A photo reflector 1 having a fitted structure has been proposed (see Patent Document 2).
JP 2001-156325 A JP 2007-13050 A

しかしながら、上記特許文献2に示した構造のフォトリフレクタ1によれば、発光素子2と受光素子4との間の遮光対策として、基板3に遮光部材10の下端部を嵌め込むための凹部3aを形成しなければならない。このため、前記基板3にある程度の厚みを持たせる必要がある。ただし、前記基板3に厚みを持たせることになれば、前記発光素子2や受光素子4が小型化及び薄型化してもフォトリフレクタ1全体の薄型化が制限されることとなる。   However, according to the photoreflector 1 having the structure shown in Patent Document 2, the concave portion 3a for fitting the lower end portion of the light shielding member 10 into the substrate 3 is provided as a light shielding measure between the light emitting element 2 and the light receiving element 4. Must be formed. For this reason, it is necessary to give the substrate 3 a certain thickness. However, if the thickness of the substrate 3 is increased, even if the light emitting element 2 and the light receiving element 4 are reduced in size and thickness, the reduction in the thickness of the entire photo reflector 1 is limited.

また、前記基板3はエポキシ樹脂などの材質で形成されている場合は、遮光部材10の下端部を嵌め込むための凹部3aを比較的容易に形成できるが、フレキシブル基板のような薄型且つ柔軟性を有した基板を使用する場合は、前記凹部3aを形成することができない。このため、薄型の基板によって形成されたフォトリフレクタにあっては、有効な光漏れ対策ができないといった問題がある。   When the substrate 3 is formed of a material such as an epoxy resin, the recess 3a for fitting the lower end portion of the light shielding member 10 can be formed relatively easily. However, the substrate 3 is thin and flexible like a flexible substrate. When using a substrate having the above, the concave portion 3a cannot be formed. For this reason, in the photo reflector formed of the thin board | substrate, there exists a problem that an effective light leakage countermeasure cannot be performed.

そこで、本発明の目的は、発光素子及び受光素子が実装される基板が薄型であっても、前記基板面における発光素子から受光素子への光漏れを容易且つ確実に防止することのできる遮光部材を備えたフォトリフレクタの製造方法を提供することである。 Accordingly, an object of the present invention is to provide a light shielding member capable of easily and reliably preventing light leakage from the light emitting element to the light receiving element on the substrate surface even when the substrate on which the light emitting element and the light receiving element are mounted is thin. method for producing Photoreflectance data having the is to provide.

上記課題を解決するために、本発明のフォトリフレクタの製造方法は、発光側電極パターン及び受光側電極パターン形成され、発光側電極パターン及び受光側電極パターンにそれぞれ発光素子及び受光素子実装された基板を用意する工程と、前記用意された基板上に発光素子及び受光素子の一部と接するように遮光層を形成する工程と、前記基板上に形成された遮光層の上に前記発光素子と受光素子を封止する封止体を形成する工程と、前記封止体の前記発光素子と受光素子との間を基板まで達しないように前記遮光層の上面にかけて切削し、前記発光素子を封止する発光側の封止部材と受光素子を封止する受光側の封止部材とに分割する工程と、前記分割された発光側の封止部材の周囲及び受光側の封止部材の周囲に遮光枠体を成形する工程とからなることを特徴とする。 In order to solve the above problems, a manufacturing method of the photo-reflector of the present invention, the light-emitting-side electrode pattern and the light-receiving side electrode pattern is formed, respectively emitting element and the light receiving element to the light-emitting-side electrode pattern and the light-receiving side electrode pattern is implemented preparing a substrate, comprising the steps that form a light shielding layer such that a portion in contact with the light emitting element and the light receiving element is formed over a substrate wherein the prepared, the emission to the light shield layer formed on the substrate forming a sealing body that abolish sealing element and the light receiving element, wherein between said light emitting element of the sealing member and the light receiving element by cutting over the upper surface of the light shielding layer so as not to reach the substrate, the light emitting A step of dividing the light-emitting side sealing member for sealing the element and a light-receiving side sealing member for sealing the light-receiving element; and the periphery of the divided light-emitting side sealing member and the light-receiving side sealing member It is molded light shielding frame body around the Characterized in that comprising the step.

発明に係るフォトリフレクタの製造方法によれば、発光素子及び受光素子を実装した基板上に遮光性樹脂による遮光層を形成する工程の後、前記基板上に形成された遮光層の上に前記発光素子と受光素子を封止する封止体を形成する工程と、前記封止体の前記発光素子と受光素子との間を基板まで達しないように前記遮光層の上面にかけて切削し、前記発光素子を封止する発光側の封止部材と受光素子を封止する受光側の封止部材とに分割する工程とを有して製造される。このように、前記遮光層が発光素子及び受光素子の周囲を埋めるようにして形成することができるので、遮光層の形成工程が簡易となる。そして、発光側の封止部材と受光側の封止部材とに分割する際にも、先の工程によって基板上が遮光層で覆われているので、封止部材の切削を基板まで達しないような精度で簡易に行うことができ、基板上における光漏れを有効に防止することができる。また、前記遮光層及び遮光枠体は同じ遮光性樹脂で形成されているため、密着性がよく、光漏れを生じるようなことがない。
According to the method of manufacturing a photoreflector according to the present invention, after the step of forming a light shielding layer with a light shielding resin on the substrate on which the light emitting element and the light receiving element are mounted, the light reflecting layer is formed on the light shielding layer formed on the substrate. A step of forming a sealing body that seals the light emitting element and the light receiving element, and cutting between the light emitting element and the light receiving element of the sealing body over the upper surface of the light shielding layer so as not to reach the substrate; The light-emitting side sealing member for sealing the element and the light-receiving side sealing member for sealing the light-receiving element are manufactured. Thus, since the light shielding layer can be formed so as to fill the periphery of the light emitting element and the light receiving element, the process of forming the light shielding layer is simplified. Even when the light-emitting side sealing member and the light-receiving side sealing member are divided, the substrate is covered with the light-shielding layer by the previous process, so that the cutting of the sealing member does not reach the substrate. Can be easily performed with high accuracy, and light leakage on the substrate can be effectively prevented. Further, since the light shielding layer and the light shielding frame are formed of the same light shielding resin, the adhesion is good and light leakage does not occur.

さらに、前記遮光層によって、発光素子及び受光素子が実装されている発光側電極パターン及び受光側電極パターンを基板上に完全に被覆されるため、経年変化等による前記発光側電極パターン及び受光側電極パターンの腐食や剥離などを防止する効果も得られる。   Furthermore, since the light emitting side electrode pattern and the light receiving side electrode pattern on which the light emitting element and the light receiving element are mounted are completely covered on the substrate by the light shielding layer, the light emitting side electrode pattern and the light receiving side electrode due to secular change or the like An effect of preventing pattern corrosion and peeling can also be obtained.

以下、添付図面に基づいて本発明に係るフォトリフレクタの実施形態を詳細に説明する。ここで、図1は本発明のフォトリフレクタの斜視図、図2は前記フォトリフレクタの平面図、図3は前記フォトリフレクタの断面図である。本実施形態におけるフォトリフレクタ30は、基板32と、この基板32上に実装される発光素子42及び受光素子44と、この発光素子42及び受光素子44上を封止する発光側の封止部材46及び受光側の封止部材48と、それぞれの封止部材46,48の周囲から光が漏れないように遮光する遮光層61及び遮光枠体62からなる遮光部材60とで構成されている。   Embodiments of a photo reflector according to the present invention will be described below in detail with reference to the accompanying drawings. Here, FIG. 1 is a perspective view of a photo reflector of the present invention, FIG. 2 is a plan view of the photo reflector, and FIG. 3 is a cross-sectional view of the photo reflector. The photo reflector 30 in this embodiment includes a substrate 32, a light emitting element 42 and a light receiving element 44 mounted on the substrate 32, and a light emitting side sealing member 46 that seals the light emitting element 42 and the light receiving element 44. The light-receiving side sealing member 48, and the light-shielding member 60 including a light-shielding layer 61 and a light-shielding frame body 62 that shield light so that light does not leak from the surroundings of the sealing members 46 and 48.

前記基板32は、FR4等のガラスエポキシ樹脂又はBTレジンによって、薄く平坦な四角形状に形成されている。この基板32の表面には発光側電極パターン34と受光側電極パターン36が形成されており、また相対する側面には円筒形の内側面を縦断したような形状のスルーホールをなす外部接続端子38が2箇所ずつ設けられ、さらに裏面には外部接続端子38を介して発光側電極パターン34と受光側電極パターン36に導通する裏面側電極パターン40が形成されている。本実施形態における発光側電極パターン34と受光側電極パターン36は、それぞれダイボンド用の電極部34a,36aと、ワイヤボンド用の電極部34b,36bにより構成されている。   The substrate 32 is formed in a thin and flat quadrangular shape using glass epoxy resin such as FR4 or BT resin. A light-emitting side electrode pattern 34 and a light-receiving side electrode pattern 36 are formed on the surface of the substrate 32, and external connection terminals 38 having through holes shaped like a longitudinally cut cylindrical inner side surface on opposite side surfaces. Are provided in two places, and a back side electrode pattern 40 that is electrically connected to the light emitting side electrode pattern 34 and the light receiving side electrode pattern 36 via the external connection terminal 38 is formed on the back side. The light-emitting side electrode pattern 34 and the light-receiving side electrode pattern 36 in the present embodiment are configured by die-bonding electrode portions 34a and 36a and wire-bonding electrode portions 34b and 36b, respectively.

前記発光素子42は例えば発光ダイオードからなり、前記受光素子44は例えばフォトダイオードからなる。それぞれがダイボンド用の電極部34a,36aにダイボンドされるとともに、ワイヤボンド用の電極部34b,36bにワイヤボンドされている。   The light emitting element 42 is made of, for example, a light emitting diode, and the light receiving element 44 is made of, for example, a photodiode. Each of them is die-bonded to the electrode portions 34a and 36a for die bonding, and is wire-bonded to the electrode portions 34b and 36b for wire bonding.

前記発光素子42及び受光素子44の上方には、それぞれ透光性樹脂からなる封止部材46,48が設けられている。この封止部材46,48は、発光素子42と受光素子44だけでなく、それらに接続されたワイヤ、発光側電極パターン34及び受光側電極パターン36の全てを封止している。   Sealing members 46 and 48 made of a translucent resin are provided above the light emitting element 42 and the light receiving element 44, respectively. The sealing members 46 and 48 seal not only the light emitting element 42 and the light receiving element 44 but also all the wires connected thereto, the light emitting side electrode pattern 34 and the light receiving side electrode pattern 36.

本発明の特徴的なところは、遮光部材60が前記基板32の上面に被覆形成された遮光層61と、この遮光層61の上に隙間なく密着して形成される遮光枠体62とで構成されている点にある。前記遮光層61は、前記発光側電極パターン34及び受光側電極パターン36の上面から発光素子42及び受光素子44の外周面の下側までを覆うようにして基板32の上面全体に形成される。そして、この遮光層61の上に後述する発光側及び受光側の封止部材46,48が形成された後、この封止部材46,48を仕切るようにして遮光するための遮光枠体62が形成される。   A characteristic feature of the present invention is that the light shielding member 60 is composed of a light shielding layer 61 formed by covering the upper surface of the substrate 32, and a light shielding frame 62 formed in close contact with the light shielding layer 61 without a gap. It is in the point. The light shielding layer 61 is formed on the entire upper surface of the substrate 32 so as to cover from the upper surface of the light emitting side electrode pattern 34 and the light receiving side electrode pattern 36 to the lower side of the outer peripheral surface of the light emitting element 42 and the light receiving element 44. Then, after light emitting side and light receiving side sealing members 46, 48 described later are formed on the light shielding layer 61, a light shielding frame 62 for shielding light by partitioning the sealing members 46, 48 is provided. It is formed.

前記遮光層61は、前記基板32上における光漏れを防止するために設けられるものである。遮光層61は、可視光や赤外光をカットするものであれば、その形態や材質には特に限定されず、例えばカーボン等の素材を混入した熱硬化性を有する遮光性樹脂塗料を一定の厚みになるように塗布、あるいは遮光性シートで基板32の上面に覆うなどしてもよい。   The light shielding layer 61 is provided to prevent light leakage on the substrate 32. The light shielding layer 61 is not particularly limited in form and material as long as it cuts visible light or infrared light. For example, a light-shielding resin paint having a thermosetting property mixed with a material such as carbon is fixed. Application may be performed so as to have a thickness, or the upper surface of the substrate 32 may be covered with a light shielding sheet.

前記遮光枠体62は、前記遮光層61の上で封止部材46,48の間を仕切るとともに、封止部材46,48の上面を除いた外周面を隙間が生じないように囲って形成されている。この遮光枠体62は、前記基板32の外周に金型を配置し、この金型内に前記遮光層61と同じ遮光性樹脂を前記封止部材46,48の上面が露出する高さに充填し、熱硬化させることによって形成される。   The light shielding frame 62 is formed so as to partition the sealing members 46 and 48 on the light shielding layer 61 and surround the outer peripheral surface of the sealing members 46 and 48 excluding the upper surface so as not to generate a gap. ing. The light shielding frame 62 has a mold disposed on the outer periphery of the substrate 32, and the mold is filled with the same light shielding resin as the light shielding layer 61 so that the upper surfaces of the sealing members 46 and 48 are exposed. And formed by heat curing.

上記構成からなるフォトリフレクタ30においては、遮光部材60によって、発光素子42と受光素子44の間及び周囲は遮光され、平面方向(図1中上方)のみに発光及び受光可能な状態となる。特に、遮光枠体62の仕切壁部50は、その下端が前記遮光層61の上面に密着しているため、発光素子42から基板32に伝わる光を遮光して、受光素子44に達することを効果的に防いでいる。   In the photoreflector 30 having the above configuration, the light shielding member 60 shields light between the light emitting element 42 and the light receiving element 44 and the periphery thereof, and can emit and receive light only in the planar direction (upper side in FIG. 1). In particular, since the lower end of the partition wall portion 50 of the light shielding frame 62 is in close contact with the upper surface of the light shielding layer 61, the light transmitted from the light emitting element 42 to the substrate 32 is shielded and reaches the light receiving element 44. It is effectively preventing.

また、前記遮光層61によって、発光側電極パターン34及び受光側電極パターン36が基板32上に完全に被覆されているため、前述したような遮光効果以外に経年変化等による発光側電極パターン34及び受光側電極パターン36の腐食や剥離などを防止する効果も得られる。   Further, since the light emitting side electrode pattern 34 and the light receiving side electrode pattern 36 are completely covered on the substrate 32 by the light shielding layer 61, the light emitting side electrode pattern 34 and An effect of preventing corrosion or peeling of the light receiving side electrode pattern 36 is also obtained.

次に、図4乃至図8に基づいて前記フォトリフレクタ30の製造方法を説明する。はじめに、図4に示すように、基板32の表裏面及びスルーホール内にメッキ、蒸着、印刷等により発光側電極パターン34、受光側電極パターン36、外部接続端子38及び裏面側電極パターン40(図3)を形成する。次に、電極部34a,36a上に発光素子42と受光素子44がダイボンドされるとともに、ワイヤにより電極部34b,36bに接続される。   Next, a method for manufacturing the photo reflector 30 will be described with reference to FIGS. First, as shown in FIG. 4, the light emitting side electrode pattern 34, the light receiving side electrode pattern 36, the external connection terminal 38, and the back side electrode pattern 40 (see FIG. 3) is formed. Next, the light emitting element 42 and the light receiving element 44 are die-bonded on the electrode portions 34a and 36a, and are connected to the electrode portions 34b and 36b by wires.

次に、図5に示すように、前記基板32の上面に遮光性樹脂を塗布した遮光層61を形成する。この遮光層61は、前記発光素子42及び受光素子44の外周面の一部にかかるように前記発光側電極パターン34及び受光側電極パターン36を被覆して形成される。   Next, as shown in FIG. 5, a light shielding layer 61 in which a light shielding resin is applied is formed on the upper surface of the substrate 32. The light shielding layer 61 is formed by covering the light emitting side electrode pattern 34 and the light receiving side electrode pattern 36 so as to cover a part of the outer peripheral surface of the light emitting element 42 and the light receiving element 44.

前記塗布による遮光性樹脂が硬化した後、図6に示すように、透光性樹脂により発光素子42及び受光素子44をともに封止する一体的な封止体45を形成する。この封止体45は、基板32の上面を全て覆うように直方体形状に形成される。その後、図7に示すように、ダイシングにより封止体45を分割するとともに、周囲を切削して封止部材46,48を形成する。このダイシングは、前記基板32に達しないように前記遮光層61の上面を僅かに削る程度にするのが好ましい。   After the light-shielding resin by the application is cured, as shown in FIG. 6, an integral sealing body 45 that seals the light-emitting element 42 and the light-receiving element 44 together with the light-transmitting resin is formed. The sealing body 45 is formed in a rectangular parallelepiped shape so as to cover the entire upper surface of the substrate 32. Thereafter, as shown in FIG. 7, the sealing body 45 is divided by dicing and the periphery is cut to form the sealing members 46 and 48. The dicing is preferably performed so that the upper surface of the light shielding layer 61 is slightly shaved so as not to reach the substrate 32.

最後に、図8に示すように、前記基板32の外周面に沿って設けた金型内に遮光性樹脂を封止部材46,48の間及びそれらの周囲に充填することにより遮光枠体62を形成する。この遮光枠体62、遮光層61及び封止部材46,48は、エポキシ樹脂等の同質の樹脂からなるものであるため、密着性がよい。このため、前記封止部材46,48を遮光枠体62及び遮光層61によって隙間なく密着して形成することができ、発光素子42から受光素子44への光漏れを略完全に防止することができる。   Finally, as shown in FIG. 8, the light shielding frame 62 is filled by filling light shielding resin between the sealing members 46 and 48 in the mold provided along the outer peripheral surface of the substrate 32. Form. The light shielding frame 62, the light shielding layer 61, and the sealing members 46 and 48 are made of a homogeneous resin such as an epoxy resin, and therefore have good adhesion. Therefore, the sealing members 46 and 48 can be formed in close contact with each other by the light shielding frame 62 and the light shielding layer 61, and light leakage from the light emitting element 42 to the light receiving element 44 can be prevented almost completely. it can.

以上、説明したように、本発明のフォトリフレクタ及びこのフォトリフレクタの製造方法にあっては、基板の上面に形成される遮光層とこの遮光層の上に形成される遮光枠体とによって隙間のない遮光部材を形成しているため、基板上における発光素子側から受光素子側への光漏れを容易且つ有効に防止することができる。これによって、加工が難しい薄型の基板を採用したフォトリフレクタであっても、十分な光漏れによる検出感度の低下を効果的に抑えることができる。   As described above, in the photo reflector of the present invention and the method of manufacturing the photo reflector, the gap is formed by the light shielding layer formed on the upper surface of the substrate and the light shielding frame formed on the light shielding layer. Therefore, light leakage from the light emitting element side to the light receiving element side on the substrate can be easily and effectively prevented. As a result, even if the photo reflector adopts a thin substrate that is difficult to process, it is possible to effectively suppress a decrease in detection sensitivity due to sufficient light leakage.

本発明に係るフォトリフレクタの斜視図である。It is a perspective view of the photo reflector which concerns on this invention. 上記フォトリフレクタの平面図である。It is a top view of the said photo reflector. 上記フォトリフレクタの断面図である。It is sectional drawing of the said photo reflector. 基板に電極パターンを形成し発光素子と受光素子を実装する工程を示す斜視図である。It is a perspective view which shows the process of forming an electrode pattern in a board | substrate and mounting a light emitting element and a light receiving element. 上記基板上に遮光層を形成する工程を示す斜視図である。It is a perspective view which shows the process of forming a light shielding layer on the said board | substrate. 上記基板上に一体封止部材を形成する工程を示す斜視図である。It is a perspective view which shows the process of forming an integrated sealing member on the said board | substrate. 上記一体封止部材を発光側と受光側の封止部材に分割する工程を示す斜視図である。It is a perspective view which shows the process of dividing | segmenting the said integral sealing member into the light emission side and the light reception side sealing member. 上記遮光層の上に遮光性樹脂を充填して遮光枠体を形成する工程を示す斜視図である。It is a perspective view which shows the process of filling light-shielding resin on the said light shielding layer, and forming a light-shielding frame. 従来のフォトリフレクタの構成を示す斜視図である。It is a perspective view which shows the structure of the conventional photo reflector. 上記従来のフォトリフレクタの断面図である。It is sectional drawing of the said conventional photo reflector. 従来の他のフォトリフレクタの断面図である。It is sectional drawing of the other conventional photo reflector.

符号の説明Explanation of symbols

1 フォトリフレクタ
2 発光素子
3 基板
3a 凹部
4 受光素子
6 封止部材
8 封止部材
10 遮光部材
16 フォトリフレクタ
18 電極パターン
20 基板
22 発光素子
24 受光素子
26 遮光枠体
26a 外周壁
26b 中間壁
30 フォトリフレクタ
32 基板
34 発光側電極パターン
34a,34b 電極部
36 受光側電極パターン
36a,36b 電極部
38 外部接続端子
40 裏面側電極パターン
42 発光素子
44 受光素子
45 封止体
46 封止部材(発光側)
48 封止部材(受光側)
50 仕切壁部
60 遮光部材
61 遮光層
62 遮光枠体
DESCRIPTION OF SYMBOLS 1 Photoreflector 2 Light emitting element 3 Substrate 3a Recessed part 4 Light receiving element 6 Sealing member 8 Sealing member 10 Light shielding member 16 Photoreflector 18 Electrode pattern 20 Substrate 22 Light emitting element 24 Light receiving element 26 Light shielding frame 26a Outer peripheral wall 26b Intermediate wall 30 Photo Reflector 32 Substrate 34 Light emitting side electrode pattern 34a, 34b Electrode part 36 Light receiving side electrode pattern 36a, 36b Electrode part 38 External connection terminal 40 Back side electrode pattern 42 Light emitting element 44 Light receiving element 45 Sealing body 46 Sealing member (light emitting side)
48 Sealing member (light receiving side)
50 Partition Wall 60 Light Shielding Member 61 Light Shielding Layer 62 Light Shielding Frame

Claims (1)

発光側電極パターン及び受光側電極パターン形成され、発光側電極パターン及び受光側電極パターンにそれぞれ発光素子及び受光素子実装された基板を用意する工程と、
前記用意された基板上に発光素子及び受光素子の一部と接するように遮光層を形成する工程と、
前記基板上に形成された遮光層の上に前記発光素子と受光素子を封止する封止体を形成する工程と、
前記封止体の前記発光素子と受光素子との間を基板まで達しないように前記遮光層の上面にかけて切削し、前記発光素子を封止する発光側の封止部材と受光素子を封止する受光側の封止部材とに分割する工程と、
前記分割された発光側の封止部材の周囲及び受光側の封止部材の周囲に遮光枠体を成形する工程とからなることを特徴とするフォトリフレクタの製造方法。
Preparing a substrate on which the light emitting side electrode pattern and the light receiving side electrode pattern are formed , and the light emitting side electrode pattern and the light receiving side electrode pattern are mounted with the light emitting element and the light receiving element, respectively;
A step that form the light-shielding layer in contact with a portion of the light emitting element and the light receiving element to the has been prepared on the substrate,
Forming a sealing body that abolish sealing the light emitting element and the light receiving element to the light shield layer formed on said substrate,
Cut between the light emitting element and the light receiving element of the sealing body over the upper surface of the light shielding layer so as not to reach the substrate, and seal the light emitting side sealing member and the light receiving element for sealing the light emitting element. Dividing into a light-receiving side sealing member;
A method of manufacturing a photo reflector, comprising: forming a light shielding frame around the divided light emitting side sealing member and around the light receiving side sealing member.
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