JP6159560B2 - Manufacturing method of optical semiconductor device - Google Patents

Description

The present invention relates to a method of manufacturing an optical semiconductor equipment, particularly the light receiving surface of the light emitting surface and the light receiving element is a method of manufacturing an optical semiconductor equipment disposed in the same direction of the light emitting element.

  An optical semiconductor device in which a light emitting surface of a light emitting element and a light receiving surface of a light receiving element are arranged in the same direction is, for example, a photoreflector having a configuration in which light is emitted from the light emitting element and reflected by an object and detected by the light receiving element A semiconductor device called is widely known. In recent years, photo reflectors are used in fine bar code readers and the like, and high resolution is required.

  In response to such a requirement, the applicant of the present application has proposed a method of manufacturing an optical semiconductor device that can be easily manufactured without using a mold when resin-sealing the optical semiconductor device (Patent Document). 1).

  The manufacturing method of the optical semiconductor device previously proposed by the present applicant will be described with reference to FIG. FIG. 7 shows a set of light emitting element 2 and light receiving element 3. First, a plurality of sets of light emitting elements 2 and light receiving elements 3 are mounted on the collective substrate 1. Electrodes (not shown) of the light emitting element 2 and the light receiving element 3 are connected to electrode terminals (wiring) (not shown) on the collective substrate 1 by wires 4 (FIG. 7a).

  Next, the entire surface of the light emitting element 2, the light receiving element 3, and the wire 4 is covered with a translucent resin layer 5 (FIG. 7b). Then, the translucent resin layer 5 is ground using the flat end mill 7, and the convex-shaped part 5a is formed on the light emission surface of the light emitting element 2, and the light receiving surface of the light receiving element 3 (FIG. 7c).

  Further, between the light emitting element 2 and the light receiving element 3, a boundary portion of each set of the light emitting element 2 and the light receiving element 3 (not shown) is cut to form a light shielding groove 5 b (FIG. 7 d). Here, the light-shielding groove 5b formed between the light-emitting element 2 and the light-receiving element 3 is cut by using a dicing saw that is generally used for individualization of a semiconductor device. A width of about 0.3 mm is formed. The light shielding groove 5b becomes a light shielding wall by forming a light shielding resin layer to be described later. Moreover, the groove | channel formed in the boundary part of each set of the light emitting element 2 and the light receiving element 3 is formed in the width | variety of about 0.3-0.6 mm, and a light-shielding resin layer is formed similarly, and light When the semiconductor element is separated, it becomes a light shielding wall that covers the outer periphery of the optical semiconductor element.

  The entire surface is covered with a light-shielding resin layer 6 (FIG. 7e). The light shielding resin fills the light shielding groove 5b formed between the light emitting element 2 and the light receiving element 3, and is cured to form a light shielding wall. By grinding the light-shielding resin layer 6 from the surface, the upper surface of the convex portion 5 is exposed (FIG. 7f). Thereafter, the boundary portions of each set of the light emitting element 2 and the light receiving element 3 are cut and separated into pieces while leaving the light-shielding resin layer 6 formed earlier, whereby each optical semiconductor device can be completed.

JP 2010-045107 A

  In the conventional method of manufacturing an optical semiconductor device as described above, the light shielding groove formed to form the light shielding wall between the pair of light emitting elements 2 and light receiving elements 3 is formed by cutting using a dicing saw. It is difficult to make the width 0.1 mm or less. In addition, when a light-shielding resin is filled in a narrow and deep groove, voids are easily generated in the groove, and there is a limit to downsizing. An object of the present invention is to solve these problems and provide a semiconductor device that can be easily miniaturized and a method for manufacturing the same.

To achieve the above object, an optical semiconductor device according to the present invention, except the light emitting element and a light receiving element mounted on the substrate, the substrate surface between the light emitting element and the light receiving element, wherein also the least emission and the transparent resin layer disposed apart from each other to cover the light emitting surface and the light receiving surface of the light receiving element of the device, the permeability of the light receiving surface of the transparent resin layer and the light-receiving elements of the light emitting surface of the light emitting element except for the exposed portion to expose a portion of the light resin layer, the transparent resin layer, covering the light emitting element and a light receiving element, and a light-shielding resin layer serving as a light shielding wall of the light emitting element and a light receiving element It is characterized by that.

In order to achieve the above object, a method of manufacturing an optical semiconductor device according to the present invention includes mounting a plurality of sets of light emitting elements and light receiving elements on a collective substrate, as well as electrodes of the light emitting elements and light receiving elements and the collective substrate. A step of connecting to the electrode terminals, a step of covering the light emitting surfaces of the plurality of sets of light emitting elements and the light receiving surfaces of the light receiving elements with a light-transmitting resin layer, A step of forming a light-blocking resin layer on the light-transmitting resin layer between the light-emitting element and the boundary between the light-emitting element and the light-receiving element, and the light-blocking property on the light-emitting surface and the light-receiving surface Removing the resin layer and exposing a part of the translucent resin layer covering the light emitting surface and the light receiving surface, and a light emitting surface and a light receiving surface of the plurality of sets of light emitting elements. Through the light receiving surface of the element The step of covering with the light-transmitting resin layer includes the step of forming the light-transmitting resin layer on the substrate surface between the light-emitting element and the light-receiving element, and covering at least the light-receiving surface and the light-emitting surface. Forming the light-transmitting resin layer covering the light-receiving surface and the light-transmitting resin layer covering the light-emitting surface in a mushroom shape or a vertically long hemispherical shape so that the light-transmitting resin layers covering the light-emitting surface are separated from each other And the step of forming the light-shielding resin layer includes filling a light-shielding resin between the light-emitting element and the light-receiving element covered with the light-transmitting resin layer, and curing the light-shielding resin. A step of forming a layer, wherein the step of exposing the translucent resin layer removes a part of the light-shielding resin layer and exposes the translucent resin layer covering the light-receiving surface and the light-emitting surface. Including a process.

  In addition, when the light-transmitting resin layer is formed on the light-emitting surface of the light-emitting element 2 and the light-receiving surface of the light-receiving element 3, the translucent resin layer whose diameter changes in the height direction can be formed by the dropping method. Further, in the method by immersion, a translucent resin layer whose diameter hardly changes in the height direction can be formed, and the size of the translucent resin layer exposed depending on the desired characteristics of the optical semiconductor device is appropriately set. There is an advantage that the degree of freedom of design can be increased.

It is explanatory drawing of the manufacturing method of the optical semiconductor device of this invention. It is explanatory drawing of the manufacturing method of the optical semiconductor device of this invention. It is explanatory drawing of the manufacturing method of the optical semiconductor device of this invention. It is explanatory drawing of the manufacturing method of the optical semiconductor device of this invention. It is explanatory drawing of the manufacturing method of the optical semiconductor device of this invention. It is explanatory drawing of the manufacturing method of the optical semiconductor device which concerns on the 2nd Example of this invention. It is explanatory drawing of the manufacturing method of the conventional optical semiconductor device.

  The method of manufacturing an optical semiconductor device of the present invention includes forming a light-transmitting resin layer on the entire surface after forming a light-transmitting resin layer on at least the light-emitting surface of the light-emitting element and the light-receiving surface of the light-receiving element. The light-shielding wall can be formed between the light-emitting element and the light-receiving element without any special processing, and a small-sized optical semiconductor device is formed. Hereinafter, it demonstrates in detail according to the manufacturing method of the optical semiconductor device of this invention.

  A first embodiment of the present invention will be described. First, as shown in FIG. 1, a plurality of sets of light emitting elements 2 and light receiving elements 3 are mounted on a collective substrate 1. In the light emitting element 2 and the light receiving element 3, an electrode formed on a light emitting surface (not shown) and an electrode formed on the light receiving surface are connected to an electrode terminal (wiring) (not shown) on the collective substrate 1 by a wire 4. The Here, an organic substrate can be used as the collective substrate.

  Next, a translucent resin layer 5 is formed by dropping and curing a liquid translucent resin on the light emitting surface of the light emitting element 2 and the light receiving surface of the light receiving element 3 mounted on the collective substrate 1. FIG. 2 is a cross-sectional view of two sets of light emitting elements and light receiving elements formed on the collective substrate 1. The wire is not shown in FIG. As the translucent resin, an epoxy resin or a silicone resin can be used. As an example, an epoxy resin having a viscosity of 30,000 mpa · S can be used.

  As shown in FIG. 2, the sizes of the light emitting element 2 and the light receiving element 3 are generally different. Also, the thickness of the element is often different. In order to form the translucent resin layer 5 having a predetermined height on the light emitting element 2 and the light receiving element 3 having different sizes and heights, it is preferable to appropriately set the viscosity of the translucent resin and the number of drops. . For example, as shown in FIG. 2, in order to form the light-transmitting resin layer 5 on the light-emitting element 2 having a small element size and a low height, the steps of dropping and curing the light-transmitting resin are performed. Then, the translucent resin layer 5 having a predetermined height can be formed by repeating the steps of dropping and curing the translucent resin again. Of course, it is possible to form the translucent resin layer 5 formed on the light receiving element 3 and to repeat the steps of dropping and curing the translucent resin. Specifically, when the light emitting surface of the light emitting element 2 is 250 μm □, the height is 220 μm, the light receiving surface of the light receiving element 3 is 600 μm □, and the height is 260 μm, 0.02 ml of epoxy resin is emitted using a dispenser. By coating twice on the element 2 and three times on the light receiving element 3, the translucent resin layer 5 having a thickness exceeding the thickness of the element can be formed. The translucent resin layer 5 thus formed has a mushroom shape as shown in FIG. 2 and has a structure in which the diameter changes in the height direction.

  In addition, as shown in FIG. 2, it is not always essential to form the translucent resin layer 5 only on the light emitting surface of the light emitting element 2 and the light receiving surface of the light receiving element 3. In the optical semiconductor device of the present invention, since it is essential to form a light-shielding resin layer between the light emitting element 2 and the light receiving element 3, the collective substrate 1 between at least one pair of the light emitting element 2 and the light receiving element 3. If the light-transmitting resin layer 5 is not formed on the surface and sufficient light-shielding characteristics are obtained by the light-blocking resin layer, the light-transmitting resin portion 5 is slightly present on the side walls of the light-emitting element 2 and the light-receiving element 3 or in the vicinity thereof. It is not a problem to be formed.

  Thereafter, a light shielding resin layer 6 is formed on the entire surface of the collective substrate 1. As shown in FIG. 3, a light shielding resin layer 6 is formed between the light emitting element 2 and the light receiving element 3. Since the distance between the light-emitting element 2 and the light-receiving element 3 is about 50 to 90 μm, it is very small compared to the case of using a conventional dicing saw (the width of the light-shielding resin layer 5 is about 0.1 mm). I understand that I can do it. Moreover, since the space | interval between the light emitting element 2 and the light receiving element 3 is wide enough, and it has the structure which flows in from the light emitting element 2 and the light receiving element 3 periphery, a void does not generate | occur | produce.

  Next, in order to expose the translucent resin portion 5, the surface of the light-shielding resin layer 6 is ground. Since the translucent resin part 5 formed previously is formed in a mushroom shape, the area of the exposed translucent resin part 5 varies depending on the amount of cutting. Moreover, since the areas of the light emitting surface of the light emitting element 2 and the light receiving surface of the light receiving element 3 are different, the cutting amount may be adjusted according to the characteristics of the optical semiconductor element to be formed.

  Thereafter, like the conventional example, the dicing saw is run along the dicing line (the wavy line portion in FIG. 4), and the collective substrate 1 and the light-shielding resin layer 6 are cut into individual pieces, thereby completing the optical semiconductor device. it can.

  Next, a second embodiment will be described. In the said 1st Example, although the translucent resin layer 5 was formed by dripping of the translucent resin using a dispenser, in this Example, the method of immersing the light emitting element 2 and the light receiving element 3 in the resin basket 7 It is also possible to use.

  Similar to the first embodiment described above, a plurality of sets of light emitting elements 2 and light receiving elements 3 are mounted on the collective substrate 1 to form necessary connections. Next, as shown in FIG. 5, the light-emitting surface of the light-emitting element 2 and the light-receiving surface of the light-receiving element 3 are immersed in a resin bowl 8 containing a translucent liquid resin 9. When the collective substrate 1 is pulled up from the resin bowl 8, a spherical liquid resin remains on the light emitting surface of the light emitting element 2 and the light receiving surface of the light receiving element 3. Then, the translucent resin part 5 can be formed by making it harden | cure. Here, if the curing is performed in a state as shown in FIG. 5c, the translucent resin portion 5 is restrained from being stretched in the lateral direction by its own weight, and can be formed into a vertically long shape. In this method, the translucent resin does not flow between the light emitting element 2 and the light receiving element 3, and can be selectively formed on the light emitting surface of the light emitting element 2 and the light receiving surface of the light receiving element 3. If necessary, the immersion and curing can be repeated a plurality of times.

  The translucent resin layer 5 formed in this way is suitable for manufacturing an optical semiconductor device with uniform characteristics in the height direction with small variations in diameter.

  When the translucent resin layer 5 is formed in this way, the distance between the light emitting element 2 and the light receiving element 3 can be further reduced as compared with the case of the above-described first embodiment, which is suitable for the miniaturization of the optical semiconductor device. Yes. Hereinafter, as in the first embodiment, the optical semiconductor device can be formed by forming the light-blocking resin layer 6, cutting the light-blocking resin layer 6, and separating the layers.

  Next, a third embodiment will be described. In the first and second embodiments, the case where the light-shielding resin layer 6 is cut from the surface when the light-transmitting resin layer 5 is exposed has been described. However, as shown in FIG. It is also possible to selectively cut only the upper part of the surface and the upper part of the light receiving surface of the light receiving element 3. When the cutting is performed using an end mill, a cylindrical hole 10 is formed. Here, since the cutting shape can be changed as appropriate, as shown in FIG. 6, the opening may have a hemispherical lens structure. In addition, the opening size and the like can be freely set, and there is an advantage that the degree of freedom increases in order to obtain a desired optical semiconductor device.

  In the optical semiconductor device formed by the manufacturing method of the present invention described above, the distance between the light-emitting element 2 and the light-receiving element 3 is set to a limit thickness for maintaining the light-shielding property of the light-shielding wall. Since they can be formed close to each other, the size can be reduced as compared with a method of forming a light-shielding resin layer in a groove formed using a conventional dicing saw.

1: Collective substrate, 2: Light emitting element, 3: Light receiving element, 4: Wire, 5: Translucent resin layer, 6: Light shielding resin layer, 7: Flat end mill, 8: Resin bowl, 9: Liquid resin, 10 : Cylindrical hole

Claims (1)

Mounting a plurality of sets of light emitting elements and light receiving elements on the collective substrate, connecting the electrodes of the light emitting elements and the light receiving elements and electrode terminals on the collective substrate, light emitting surfaces of the plurality of sets of light emitting elements, and A step of covering the light receiving surface of the light receiving element with a translucent resin layer, and between the light emitting element and the light receiving element of each set of the light emitting element and the light receiving element; And a step of forming a light-blocking resin layer on the light-transmitting resin layer, and the light-transmitting layer that covers the light-emitting surface and the light-receiving surface by removing the light-blocking resin layer on the light-emitting surface and the light-receiving surface. A method of manufacturing an optical semiconductor device including a step of exposing a part of the resin layer,
  The step of covering the light emitting surfaces of the plurality of sets of light emitting elements and the light receiving surfaces of the light receiving elements with a light transmitting resin layer includes forming the light transmitting resin layer on the substrate surface between the light emitting elements and the light receiving elements. First, the translucent resin layer covering the light receiving surface and the light emitting surface are coated so that at least the translucent resin layer covering the light receiving surface and the translucent resin layer covering the light emitting surface are separated from each other. Including a step of forming a translucent resin layer into a mushroom shape or a vertically long hemispherical shape,
  The step of forming the light-shielding resin layer includes forming a light-shielding resin layer serving as a light-shielding wall by filling and curing the light-shielding resin between the light-emitting element and the light-receiving element covered with the light-transmitting resin layer. Including the steps of:
  The step of exposing the translucent resin layer includes a step of removing a part of the light-shielding resin layer and exposing the translucent resin layer covering the light receiving surface and the light emitting surface. Manufacturing method of optical semiconductor device.

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