JP2016149386A - Semiconductor device, electronic device and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To block a semiconductor chip from electromagnetic noise by a novel structure.SOLUTION: A semiconductor device comprises: an encapsulation resin 400 which has a salient 410 above a third surface 202 of a semiconductor chip 200 and has translucency; a shield resin 500 encapsulates a surface of the encapsulation resin 400 in a state where a top face of the salient 410 is exposed and has a light blocking effect and conductive property; and a wring board 100 has a shield electrode 134 on a first surface 102. The shield electrode 134 has a lateral face exposed from a lateral face of the encapsulation resin 400. The lateral face of the shield electrode 134 is flush with the lateral face of the encapsulation resin 400 and contacts the shield resin 500. With this configuration, the shield electrode 134 is electrically connected to the shield resin 500.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor device, an electronic device, and a method for manufacturing a semiconductor device.

  In some semiconductor devices, a semiconductor chip includes a light emitting element (for example, LED: Light-Emitting Diode) or a light receiving element (for example, a photodiode). In such a semiconductor device, it is necessary to seal the semiconductor chip in order to shield the semiconductor chip from the external region.

  Patent Document 1 describes an example of a method for sealing a semiconductor chip having a light receiving element. In this example, the semiconductor chip mounted on the wiring board is sealed with a sealing resin. Furthermore, a molded resin frame is mounted on the wiring board. The resin frame covers the sealing resin and includes an insulating resin frame and a conductive resin frame. The insulating resin frame surrounds the sealing resin in plan view. The conductive resin frame covers a region surrounded by the insulating resin frame, and a part covers the outer surface of the insulating resin frame. The conductive resin frame has an opening above the semiconductor chip.

  Patent Document 2 describes an example of a method for sealing a semiconductor chip having a light receiving element. In this example, the semiconductor chip mounted on the wiring board is sealed with a translucent sealing resin. The sealing resin has a convex portion above the semiconductor chip. The surface of the sealing resin is sealed with a light-shielding resin so that the upper surface of the convex portion is exposed.

JP-A-8-167724 JP 2014-99468 A

  In a semiconductor chip having at least one of a light emitting element and a light receiving element, it is necessary to shield the semiconductor chip from electromagnetic noise. The inventor of the present invention has studied to cut off a semiconductor chip from electromagnetic noise with a novel structure.

  An example of a problem to be solved by the present invention is to cut off a semiconductor chip from electromagnetic noise with a novel structure.

The invention described in claim 1
A wiring board;
A semiconductor chip mounted on the wiring board and having a photoelectric conversion portion on a surface opposite to the wiring board;
A sealing resin that seals the semiconductor chip and has translucency;
Sealing the surface of the sealing resin, and a shielding resin having a light shielding property and conductivity;
An opening that is formed in the shield resin and at least partially overlaps the photoelectric conversion unit when viewed from a direction perpendicular to the wiring board;
A first electrode provided on the wiring board and electrically connected to the shield resin;
It is a semiconductor device provided with.

The invention described in claim 7
A semiconductor device;
A mounting substrate on which the semiconductor device is mounted;
With
The semiconductor device includes:
A wiring board;
A semiconductor chip mounted on the wiring board and having a photoelectric conversion portion on a surface opposite to the wiring board;
A sealing resin that seals the semiconductor chip and has translucency;
Sealing the surface of the sealing resin, and a shielding resin having a light shielding property and conductivity;
An opening that is formed in the shield resin and at least partially overlaps the photoelectric conversion unit when viewed from a direction perpendicular to the wiring board;
A first electrode provided on the wiring board and electrically connected to the shield resin;
Is an electronic device.

The invention according to claim 11
Preparing a wiring board having a first electrode and a semiconductor chip having a photoelectric conversion unit;
Mounting the semiconductor chip on the wiring substrate in a direction in which the surface opposite to the photoelectric conversion portion of the semiconductor chip faces the wiring substrate;
Sealing the semiconductor chip with a sealing resin having translucency;
Exposing a part of the surface of the first electrode from the sealing resin by forming a groove in the sealing resin so that a part of the first electrode is removed;
Filling the groove with a shielding resin having light shielding properties and conductivity;
After filling the shield resin, separating the wiring board along the groove,
A method for manufacturing a semiconductor device comprising:

It is sectional drawing which shows the structure of the semiconductor device which concerns on embodiment. FIG. 2 is a top view illustrating a configuration of the semiconductor device illustrated in FIG. 1. FIG. 2 is a bottom view showing the configuration of the semiconductor device shown in FIG. 1. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure for demonstrating the manufacturing method of the semiconductor device shown in FIG. It is a figure which shows the modification of FIG. FIG. 20 is a diagram for explaining a manufacturing method of the semiconductor device shown in FIG. 19. FIG. 20 is a diagram for explaining a manufacturing method of the semiconductor device shown in FIG. 19. FIG. 20 is a diagram for explaining a manufacturing method of the semiconductor device shown in FIG. 19. 1 is a cross-sectional view illustrating a configuration of a semiconductor device according to Example 1. FIG. FIG. 24 is a top view illustrating a configuration of the semiconductor device illustrated in FIG. 23. FIG. 24 is a bottom view illustrating the configuration of the semiconductor device illustrated in FIG. 23. FIG. 6 is a cross-sectional view illustrating a configuration of an electronic device according to a second embodiment. 7 is a cross-sectional view illustrating a configuration of an electronic device according to Example 3. FIG. FIG. 28 is a bottom view of a wiring board used in the electronic device shown in FIG. 27. It is a figure for demonstrating the manufacturing method of the electronic device shown in FIG. It is a figure for demonstrating the manufacturing method of the electronic device shown in FIG. It is a figure for demonstrating the manufacturing method of the electronic device shown in FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

  FIG. 1 is a cross-sectional view illustrating a configuration of a semiconductor device according to an embodiment. This semiconductor device includes a wiring substrate 100, a semiconductor chip 200, a bonding wire 300, a sealing resin 400, and a shield resin 500.

  The semiconductor chip 200 is mounted on the first surface 102 of the wiring substrate 100. The semiconductor chip 200 is mounted such that the back surface (fourth surface 204) faces the first surface 102 of the wiring substrate 100. In the example shown in this figure, the semiconductor chip 200 is disposed on the die pad 120. The fourth surface 204 of the semiconductor chip 200 is fixed to the die pad 120 with, for example, silver paste.

  The semiconductor chip 200 has a photoelectric conversion unit on the third surface 202 (active surface) side, which is the surface opposite to the back surface (fourth surface 204). Thereby, the semiconductor chip 200 can convert an optical signal (for example, visible light, infrared rays, or ultraviolet rays) into an electrical signal, or can convert an electrical signal into an optical signal. Specifically, the photoelectric conversion unit includes at least one of a light receiving element (for example, a photodiode) and a light emitting element (for example, LED: Light Emitting Diode). These elements are formed using, for example, a substrate (for example, a silicon substrate) used for the semiconductor chip 200.

  The semiconductor chip 200 has an optical surface 210 on the third surface 202. When the semiconductor chip 200 functions as a light receiving element, an optical signal is input to the semiconductor chip 200 (photoelectric conversion unit) via the optical surface 210. On the other hand, when the semiconductor chip 200 functions as a light emitting element, an optical signal is output from the semiconductor chip 200 (photoelectric conversion unit) via the optical surface 210.

  The sealing resin 400 seals the semiconductor chip 200 and the first surface 102 of the wiring substrate 100. The sealing resin 400 is formed using a light-transmitting resin (for example, an epoxy resin or a silicon resin). Thereby, the optical signal input to the semiconductor chip 200 and the optical signal output from the semiconductor chip 200 can pass through the sealing resin 400.

  The sealing resin 400 has a convex portion 410 above the third surface 202 (optical surface 210) of the semiconductor chip 200. The upper surface of the convex portion 410 is not covered with the shield resin 500 (details will be described later) and is exposed. In other words, the shield resin 500 has an opening in a region where the convex portion 410 is located. The opening overlaps at least part of the optical surface 210 of the semiconductor chip 200 in plan view. Accordingly, an optical signal from the outside of the sealing resin 400 can enter the inside of the sealing resin 400 from the convex portion 410. On the other hand, an optical signal from the inside of the sealing resin 400 can come out of the sealing resin 400 from the convex portion 410. In the example shown in the figure, the upper surface of the convex portion 410 is flat. And the side surface of the convex part 410 inclines in the direction where the width | variety of the convex part 410 becomes narrow as it goes upwards. Further, the upper surface of the convex portion 410 is flush with the upper surface of the shield resin 500.

  The shield resin 500 seals the surface of the sealing resin 400 with the upper surface of the convex portion 410 exposed. Specifically, the shield resin 500 seals the side surface of the convex portion 410, the upper surface of the sealing resin 400, and the side surface of the sealing resin 400. The shield resin 500 has a light shielding property. Thereby, an optical signal from the outside of the shield resin 500 is blocked by the shield resin 500. Furthermore, the shield resin 500 has conductivity. Thereby, electromagnetic noise from the outside can flow through the shield resin 500. In other words, the shield resin 500 suppresses external electromagnetic noise from entering the semiconductor chip 200 (in particular, the optical surface 210). The shield resin 500 is formed, for example, by dispersing a conductive filler (for example, carbon) in a light-blocking resin (for example, an epoxy resin or a silicon resin).

  In the example shown in this figure, the wiring board 100 is formed using the core layer 110. The core layer 110 is an insulating layer, and is formed using, for example, a resin (more specifically, for example, an epoxy resin). The wiring substrate 100 (core layer 110) has a die pad 120 and a plurality of electrodes 130 on the first surface 102. Furthermore, the wiring substrate 100 has a plurality of external connection electrodes 140 on the second surface 104 (back surface) that is the surface opposite to the first surface 102. As will be described in detail later, the plurality of electrodes 130 are electrically connected to different external connection electrodes 140.

  In the example shown in this figure, the electrode 130 and the external connection electrode 140 use a metal layer 150 (for example, Cu layer), a metal layer 160 (for example, Au layer), and an insulating member 170 (for example, epoxy resin), It is formed as one piece. Specifically, a part (hole portion) of the metal layer 150 is formed on the inner wall of the through hole formed in the core layer 110. A part of the insulating member 170 is embedded in the through hole. The insulating member 170 has an upper end protruding upward from the upper end (first surface 102) of the through hole, and a lower end protruding downward from the lower end (second surface 104) of the through hole. The upper end of the insulating member 170 is covered with a part of the metal layer 150. A metal layer 160 is laminated on this part of the metal layer 150. The lower end of the insulating member 170 is covered with a part of the metal layer 150. A metal layer 160 is laminated on this part of the metal layer 150. Thus, in the metal layer 150, a portion (upper portion) located above the upper end (first surface 102) of the through hole becomes a part of the electrode 130, and the lower end (second surface 104) of the through hole. Also, the lower part (lower part) is a part of the external connection electrode 140. And these upper part and lower part of the metal layer 150 are connected via the above-mentioned hole part of the metal layer 150. Thereby, the electrode 130 and the external connection electrode 140 are electrically connected to each other.

  Furthermore, in the example shown in this drawing, the die pad 120 is formed using a metal layer 150 and a metal layer 160. Specifically, in the die pad 120, the metal layer 150 and the metal layer 160 are laminated in this order.

  Some of the electrodes 130 are connection electrodes 132, and are electrically connected to the semiconductor chip 200 through bonding wires 300. On the other hand, the other partial electrode 130 is a shield electrode 134 (first electrode), and is electrically connected to the shield resin 500 as will be described in detail later. The shield electrode 134 is electrically separated from the semiconductor chip 200. In the example shown in the drawing, a member (for example, a bonding wire) that is electrically connected to the semiconductor chip 200 is not attached to the shield electrode 134.

  As shown in the figure, the shield electrode 134 has a side surface exposed from the side surface of the sealing resin 400. This side surface of the shield electrode 134 forms the same surface as the side surface of the sealing resin 400 and is in contact with the shield resin 500. Thereby, the shield electrode 134 is electrically connected to the shield resin 500. The shield electrode 134 is electrically connected to the external connection electrode 140 (shield external connection electrode 144). Thereby, electromagnetic noise from the outside can flow to the shield external connection electrode 144 through the shield resin 500 and the shield electrode 134.

  In the example shown in this figure, the wiring board 100 has a side surface forming the same surface as the above-described side surface (side surface exposed from the side surface of the sealing resin 400) of the shield electrode 134. Further, a part (first portion) of the shield resin 500 is formed along the same surface as described above. In the thickness direction of the wiring board 100, the lower end of the first portion of the shield resin 500 is located below the first surface 102 of the wiring board 100.

  In the example shown in this figure, the wiring board 100 has a convex portion 112 on the side surface. The lower end of the first portion of the shield resin 500 reaches the convex portion 112. In the example shown in this figure, the convex portion 112 has an inclined surface that inclines in a direction in which the width of the wiring board 100 increases as it goes downward in the thickness direction of the wiring board 100. Further, the convex portion 112 has the lower end surface forming the same surface as the second surface 104 of the wiring substrate 100. Further, the convex portion 112 has an upper surface that is flush with the surface of the shield resin 500.

  FIG. 2 is a top view showing the configuration of the semiconductor device shown in FIG. FIG. 3 is a bottom view showing the configuration of the semiconductor device shown in FIG. As shown in FIG. 2, the wiring substrate 100 has a die pad 120 and a plurality of electrodes 130 on the first surface 102. The die pad 120 is located at the center of the wiring board 100. The plurality of electrodes 130 are located around the die pad 120. As shown in FIG. 3, the wiring board 100 has a plurality of external connection electrodes 140 on the second surface 104.

  As shown in FIG. 2, the planar shape of the wiring substrate 100 and the planar shape of the semiconductor chip 200 are both rectangular. In plan view, the wiring board 100 and the semiconductor chip 200 are overlapped at the center. In the example shown in the figure, the planar shape of the optical surface 210 is also rectangular. The center of the optical surface 210 overlaps the center of the semiconductor chip 200.

  In the example shown in the drawing, the plurality of electrodes 130 are arranged along the edge of the wiring board 100. Specifically, in the example shown in the figure, the wiring board 100 has five electrodes 130. Of the five electrodes 130, three electrodes 130 (connection electrodes 132) are arranged along the first side of the wiring board 100 (rectangular shape). Of the five electrodes 130, two electrodes 130 (shield electrodes 134) are arranged along the second side of the wiring substrate 100 that faces the first side. However, the planar layout of the plurality of electrodes 130 is not limited to the example shown in this figure. Note that, in the example shown in this drawing, the plurality of electrodes 130 have a rectangular planar shape.

  Of the three connection electrodes 132, one is a power supply potential supply electrode, the other is a ground potential supply electrode, and the remaining one is a signal input / output electrode. In the example shown in this drawing, the connection electrode 132 for supplying the ground potential is electrically connected to the die pad 120 via the wiring 122. The connection electrode 132 for the ground electrode is formed integrally with the die pad 120 and the wiring 122. These three connection electrodes 132 are arranged in the order of, for example, an electrode for ground potential supply, an electrode for power supply potential supply, and an electrode for signal input / output.

  The connection electrode 132 is electrically connected to the pad 220 of the semiconductor chip 200 via the bonding wire 300. On the other hand, the shield electrode 134 is electrically separated from the semiconductor chip 200. In the example shown in the drawing, a member (for example, a bonding wire) that is electrically connected to the semiconductor chip 200 is not attached to the shield electrode 134. On the other hand, a part of the edge of the shield electrode 134 is in contact with the shield resin 500. Thereby, the shield electrode 134 is electrically connected to the shield resin 500.

  As shown in FIG. 3, the plurality of external connection electrodes 140 are arranged along the edge of the wiring board 100. In the example shown in FIGS. 1 to 3, the plurality of external connection electrodes 140 are arranged to face different electrodes 130 with the core layer 110 interposed therebetween.

  4 to 18 are views for explaining a method of manufacturing the semiconductor device shown in FIG. First, as shown in FIG. 4, a wiring board 100 is prepared. In the example shown in the figure, the wiring board 100 has a metal layer 150 (for example, a Cu layer) on each of both surfaces of a core layer 110 (for example, a resin layer).

  Next, as shown in FIG. 5, a through hole 114 is formed in the wiring board 100. In the region where the through hole 114 is formed, the electrode 130 and the external connection electrode 140 (FIG. 1) are formed in a process described later.

  Next, as shown in FIG. 6, the wiring substrate 100 is subjected to metal plating (for example, Cu plating). Thereby, the metal layer 150 is formed on the inner wall of the through hole 114. Furthermore, the film thickness of the metal layer 150 increases on both surfaces of the core layer 110.

  Next, as shown in FIG. 7, an insulating member 170 is embedded in the through hole 114. In the example shown in this drawing, the upper surface of the insulating member 170 is formed on the same plane as the upper surface of the wiring board 100. Similarly, the lower surface of the insulating member 170 forms the same surface as the lower surface of the wiring board 100. The insulating member 170 is formed as follows, for example. First, a liquid or gel-like insulating material (for example, epoxy ink) is embedded in the through hole 114. The material is then dried to solidify the material. Next, the portion of the material protruding from the through hole 114 is polished. Thereby, the upper surface and the lower surface of this material form the same surface as the upper surface and the lower surface of the wiring substrate 100, respectively. In this way, the insulating member 170 is formed as shown in the figure.

  Next, as shown in FIG. 8, the wiring substrate 100 is subjected to metal plating (for example, Cu plating). As a result, the upper and lower surfaces of the insulating member 170 are covered with the metal layer 150. Furthermore, the film thickness of the metal layer 150 increases on both surfaces of the core layer 110.

  Next, as shown in FIG. 9, a partial region on the upper surface of the wiring substrate 100 and a partial region on the lower surface of the wiring substrate 100 are covered with a mask film 710 (for example, a resist film). In the example shown in this figure, a region where the die pad 120 (FIG. 1) is formed (die pad region), a region where the electrode 130 (FIG. 1) is formed, and a region where the external connection electrode 140 (FIG. 1) is formed. A mask film 710 is covered. Furthermore, in the example shown in this figure, the mask film 710 covering the region where the shield electrode 134 (FIG. 1) is formed is more than the mask film 710 covering the region where the shield external connection electrode 144 (FIG. 1) is formed. It is far from the die pad area.

  Next, as shown in FIG. 10, the metal layer 150 is etched using the mask film 710 as a mask. Thereby, a pattern that becomes a part of the die pad 120 (FIG. 1), a pattern that becomes a part of the electrode 130 (FIG. 1), and a pattern that becomes a part of the external connection electrode 140 (FIG. 1) are formed. Next, the mask film 710 is removed.

  Next, as shown in FIG. 11, the metal layer 150 is subjected to metal plating (for example, Au plating). Thereby, the metal layer 160 is laminated on the metal layer 150. Then, the die pad 120, the electrode 130, and the external connection electrode 140 are formed.

  Next, as shown in FIG. 12, the semiconductor chip 200 is mounted on the die pad 120. The semiconductor chip 200 is fixed to the die pad 120 with, for example, silver paste.

  Next, as shown in FIG. 13, the wiring substrate 100 and the semiconductor chip 200 are connected using bonding wires 300.

  Next, as shown in FIG. 14, the semiconductor chip 200 and the first surface 102 of the wiring substrate 100 are sealed with a sealing resin 400.

  Next, as shown in FIG. 15, a recess 420 is formed on the upper surface of the sealing resin 400 using a dicing blade 722. Thereby, the convex portion 410 is formed on the sealing resin 400 above the third surface 202 of the semiconductor chip 200. In the example shown in this figure, the width of the dicing blade 722 becomes narrower toward the tip. Thereby, the side surface of the convex portion 410 is inclined in a direction in which the width of the convex portion 410 becomes narrower toward the upper side.

  Next, as shown in FIG. 16, a groove 430 is formed on the bottom surface of the recess 420 of the sealing resin 400 using a dicing blade 724. When forming the groove 430, the dicing blade 724 removes a part of the shield electrode 134. Thereby, a part of the surface of the shield electrode 134 is exposed from the surface of the sealing resin 400. This part of the shield electrode 134 forms the same surface as the surface of the sealing resin 400. Note that the connection electrode 132 is separated from the groove 430. For this reason, the connection electrode 132 is not removed by the dicing blade 724.

  In the example shown in this figure, the tip of the dicing blade 724 penetrates the sealing resin 400. The tip of the dicing blade 724 reaches below the first surface 102 of the wiring substrate 100 and above the second surface 104 of the wiring substrate 100. In other words, the tip of the dicing blade 724 does not penetrate the wiring board 100. As a result, a part of the wiring board 100 remains below the lower end of the groove 430. This part of the wiring substrate 100 becomes a convex portion 112 (FIG. 1) in the process of dividing the wiring substrate 100 into pieces (details will be described later). In the example shown in this figure, the width of the dicing blade 724 becomes narrower toward the tip. Thereby, the side surface of the lower end of the groove 430 is inclined in a direction in which the width of the groove 430 becomes narrower toward the lower side.

  Next, as shown in FIG. 17, the shielding resin 500 is filled into the recess 420 of the sealing resin 400 and the groove 430 of the sealing resin 400. As described above, a part of the shield electrode 134 is exposed from the surface of the sealing resin 400. Thereby, this part of the shield electrode 134 can be in contact with the shield resin 500. In addition, when the shielding resin 500 is filled, the shielding resin 500 does not cover the upper surface of the convex portion 410 of the sealing resin 400.

  The shield resin 500 is filled as follows, for example. First, the recess 420 and the groove 430 are filled with a liquid or gel-like resin. In this case, the resin forms the same surface as the upper surface of the convex portion 410. The resin is then heated. As a result, the resin is cured. In this manner, as shown in the drawing, the shield resin 500 is filled in the concave portion 420 and the groove 430 so that the upper surface of the convex portion 410 is exposed.

  Next, as shown in FIG. 18, the wiring substrate 100 is separated into pieces along the grooves 430 using a dicing blade 726. Thereby, the semiconductor device shown in FIG. 1 is manufactured. In this case, in the wiring substrate 100, the portion remaining below the lower end of the groove 430 in the process shown in FIG. In the example shown in the drawing, the side surface of the shield resin 500 and the upper surface of the convex portion 112 are formed along the side surface of the dicing blade 726. For this reason, the side surface of the shield resin 500 and the upper surface of the convex portion 112 form the same surface.

  FIG. 19 is a diagram showing a modification of FIG. The semiconductor device according to this modification has the same configuration as that of the semiconductor device according to the embodiment except for the following points. In the example shown in the drawing, the shield resin 500 has an opening above the semiconductor chip 200. The sealing resin 400 does not enter the opening of the shield resin 500. In other words, in the example shown in this drawing, the sealing resin 400 does not have the convex portion 410 (FIG. 1).

  20 to 22 are views for explaining a method of manufacturing the semiconductor device shown in FIG. First, similarly to the embodiment, the steps shown in FIGS. 4 to 14 are performed.

  Next, as shown in FIG. 20, a mask film 712 (for example, a resist film) is formed above the semiconductor chip 200.

  Next, as shown in FIG. 21, a groove 430 is formed in the sealing resin 400 using a dicing blade 724. As in the example shown in FIG. 16, when forming the groove 430, the dicing blade 724 removes a part of the shield electrode 134. Thereby, a part of the surface of the shield electrode 134 is exposed from the surface of the sealing resin 400.

  Next, as shown in FIG. 22, the groove 430 (FIG. 21) is embedded with the shield resin 500 and the upper surface of the sealing resin 400 is sealed with the shield resin 500. In this case, the mask film 712 is located above the semiconductor chip 200. Therefore, the upper surface of the sealing resin 400 is not sealed with the shield resin 500 in the region where the mask film 712 is located.

  Next, the mask film 712 is removed. As a result, the shield resin 500 has an opening above the semiconductor chip 200. Next, the wiring substrate 100 is separated into pieces as in the example shown in FIG. Thereby, the semiconductor device shown in FIG. 19 is manufactured.

  As described above, according to the present embodiment, the shield resin 500 has conductivity. The shield electrode 134 is electrically connected to the shield resin 500. Thereby, electromagnetic noise from the outside can flow to the shield electrode 134 through the shield resin 500. Thereby, this noise is prevented from entering the semiconductor chip 200.

Example 1
FIG. 23 is a cross-sectional view illustrating the configuration of the semiconductor device according to Example 1, and corresponds to FIG. 1 of the embodiment. FIG. 24 is a top view showing the configuration of the semiconductor device shown in FIG. 23, and corresponds to FIG. 2 of the embodiment. FIG. 25 is a bottom view showing the configuration of the semiconductor device shown in FIG. 23, and corresponds to FIG. 3 of the embodiment. The semiconductor device according to this example is the same as the configuration of the semiconductor device according to the embodiment except for the following points.

  As shown in FIG. 25, the shield external connection electrode 144 includes the semiconductor chip 200 on the inside in plan view. However, the shield external connection electrode 144 may overlap only a part of the semiconductor chip 200 in plan view. The shield external connection electrode 144 is electrically connected to the shield resin 500. Thereby, in the example shown in this drawing, the back surface (fourth surface 204) of the semiconductor chip 200 can be shielded by the shield external connection electrode 144.

  Specifically, as shown in FIG. 25, the wiring board 100 is provided with only one shield external connection electrode 144. The shield external connection electrode 144 has a rectangular planar shape. Three external connection electrodes 142 are arranged along the first side of the wiring board 100 (rectangular shape). The shield external connection electrode 144 is provided in almost the entire region that does not overlap the three external connection electrodes 142 when viewed from the direction in which the three external connection electrodes 142 are arranged. As shown in FIG. 24, two shield electrodes 134 are provided on the first surface 102 of the wiring substrate 100. These two shield electrodes 134 are electrically connected to the same external connection electrode 144 (FIG. 25). In the example shown in FIG. 23, a part of the shield external connection electrode 144 is located below the lower end of the shield resin 500 via the convex portion 112.

(Example 2)
FIG. 26 is a cross-sectional view illustrating the configuration of the electronic device according to the second embodiment, and corresponds to FIG. 1 of the embodiment. The electronic device according to the present embodiment includes a mounting substrate 600 on which the semiconductor device shown in FIG. 1 is mounted.

  In the example shown in this drawing, the wiring board 100 is mounted on the mounting surface (fifth surface 602) of the mounting substrate 600. The mounting substrate 600 is, for example, a motherboard. In the example shown in this figure, the mounting substrate 600 has a direction in which the fifth surface 602 of the mounting substrate 600 and the second surface 104 of the wiring substrate 100 face each other (specifically, the fifth surface 602 and the second surface 104 are parallel to each other). The semiconductor device is mounted in the direction). The wiring board 100 is fixed to the mounting board 600 via solder balls 610. The solder ball 610 is formed on the external connection electrode 140 (the external connection electrode 142 and the shield external connection electrode 144). For this reason, by grounding the shield external connection electrode 144 via the solder ball 610, electromagnetic noise from the outside is shielded via the shield resin 500, the shield electrode 134, the shield external connection electrode 144, the solder ball 610, and the mounting substrate 600. Can flow to the ground.

(Example 3)
FIG. 27 is a cross-sectional view illustrating the configuration of the electronic device according to the third embodiment and corresponds to FIG. 26 of the second embodiment. FIG. 28 is a bottom view of the wiring board 100 used in the electronic device shown in FIG. 27 and corresponds to FIG. 25 of the first embodiment. The electronic device according to the present embodiment is the same as the configuration of the electronic device according to the second embodiment except for the following points.

  As shown in FIG. 28, when viewed from a direction perpendicular to the wiring substrate 100, the shield external connection electrode 144 includes the semiconductor chip 200 inside. As shown in FIG. 27, the mounting substrate 600 has a direction in which the fifth surface 602 of the mounting substrate 600 and the second surface 104 of the wiring substrate 100 intersect (specifically, the fifth surface 602 and the second surface 104 are orthogonal to each other). The semiconductor device is mounted in the direction of The wiring substrate 100 and the sealing resin 400 are opposed to the mounting substrate 600 without the shield resin 500 interposed therebetween. According to the present embodiment, the back surface (fourth surface 204) of the semiconductor chip 200 can be shielded by the shield external connection electrode 144 without covering the back surface (fourth surface 204) of the semiconductor chip 200 with the mounting substrate 600. it can. Furthermore, the wiring substrate 100 and the sealing resin 400 can be shielded by the mounting substrate 600 even if the portion facing the mounting substrate 600 is not covered by the shielding resin 500.

  As shown in FIG. 28, the wiring board 100 has three external connection electrodes 142 arranged along the first side. The wiring substrate 100 is mounted on the mounting substrate 600 such that the side surface connected to the first side faces the mounting substrate 600. Thereby, the three external connection electrodes 142 can be arranged at positions close to the fifth surface 602 of the mounting substrate 600. Thereby, as shown in FIG. 27, the external connection electrode 142 can be electrically connected to the mounting substrate 600 via the solder fillet 620. In the example shown in the drawing, a part of the solder fillet 620 enters a space formed between the external connection electrode 142 and the fifth surface 602.

  As shown in FIG. 28, the wiring board 100 has external connection electrodes 146 on the second surface 104 (back surface). The external connection electrode 146 is disposed away from the three external connection electrodes 142 along the first side. A shield external connection electrode 144 is provided on the opposite side of the mounting substrate 600 via the three external connection electrodes 142 and the external connection electrode 146. The shield external connection electrode 144 is electrically connected to the external connection electrode 146 via the wiring 148. The external connection electrode 146 is disposed at a position close to the fifth surface 602 of the mounting substrate 600 in the same manner as the external connection electrode 142. Thereby, similarly to the external connection electrode 142, the external connection electrode 146 can be electrically connected to the mounting substrate 600 via the solder fillet. In this way, the shield external connection electrode 144 is electrically connected to the mounting substrate 600.

  Each of FIGS. 29 to 31 is a view for explaining a method of manufacturing the electronic device shown in FIG. First, the steps shown in FIGS. 4 to 15 are performed. However, in this embodiment, each electrode (connection electrode 132 and shield electrode 134) connected to one of the two adjacent semiconductor chips 200 and each electrode (connection electrode 132 and shield) connected to the other of the two semiconductor chips 200 are used. The electrodes 134) are arranged symmetrically with respect to a straight line passing between the two semiconductor chips 200. Specifically, the connection electrode 132 is disposed between two adjacent semiconductor chips 200. On the other hand, the shield electrode 134 is disposed outside the two semiconductor chips 200 adjacent to each other.

  Next, as shown in FIG. 29, a groove 430 is formed on the bottom surface of the recess 420 of the sealing resin 400 using a dicing blade 724. In the example shown in this figure, no groove 430 is formed between two adjacent semiconductor chips 200.

  Next, as shown in FIG. 30, the shielding resin 500 is filled into the recess 420 of the sealing resin 400 and the groove 430 of the sealing resin 400.

  Next, as shown in FIG. 31, the wiring substrate 100 is separated into pieces along the grooves 430 using a dicing blade 726. Furthermore, in the example shown in this figure, dicing is performed by the dicing blade 726 even between two adjacent semiconductor chips 200. As a result, the wiring substrate 100 is divided into a unit including one of the two semiconductor chips 200 and a unit including the other of the two semiconductor chips 200. In this case, the two units do not have the shield resin 500 on the surfaces facing each other.

  Next, as shown in FIG. 27, the wiring substrate 100 is mounted on the mounting substrate 600 in a direction in which the surface on which the shield resin 500 is not formed and the fifth surface 602 of the mounting substrate 600 face each other. Thereby, the electronic device shown in this drawing is manufactured.

  Also in this embodiment, the shield electrode 134 is electrically connected to the shield resin 500. Thereby, electromagnetic noise from the outside can be flowed to the shield electrode 134 through the shield resin 500. Furthermore, in this embodiment, the back surface (fourth surface 204) of the semiconductor chip 200 can be shielded by the shield external connection electrode 144. Furthermore, in this embodiment, the wiring substrate 100 and the sealing resin 400 can be shielded by the mounting substrate 600 even if the portion facing the mounting substrate 600 is not covered by the shielding resin 500.

  As mentioned above, although embodiment and the Example were described with reference to drawings, these are illustrations of this invention and can also employ | adopt various structures other than the above.

DESCRIPTION OF SYMBOLS 100 Wiring board 102 1st surface 104 2nd surface 110 Core layer 112 Protruding part 114 Through hole 120 Die pad 122 Wiring 130 Electrode 132 Connection electrode 134 Shield electrode 140 External connection electrode 142 External connection electrode 144 Shield external connection electrode 146 External connection electrode 148 Wiring 150 Metal layer 160 Metal layer 170 Insulating member 200 Semiconductor chip 202 Third surface 204 Fourth surface 210 Optical surface 220 Pad 300 Bonding wire 400 Sealing resin 410 Convex portion 420 Concavity 430 Groove 500 Shield resin 600 Mounting substrate 602 Fifth surface 610 Solder ball 620 Solder fillet 710 Mask film 712 Mask film 722 Dicing blade 724 Dicing blade 726 Dicing blade

Claims (14)

A wiring board;
A semiconductor chip mounted on the wiring board and having a photoelectric conversion portion on a surface opposite to the wiring board;
A sealing resin that seals the semiconductor chip and has translucency;
Sealing the surface of the sealing resin, and a shielding resin having a light shielding property and conductivity;
An opening that is formed in the shield resin and at least partially overlaps the photoelectric conversion unit when viewed from a direction perpendicular to the wiring board;
A first electrode provided on the wiring board and electrically connected to the shield resin;
A semiconductor device comprising: The semiconductor device according to claim 1,
The first electrode is
It is formed on the first surface of the wiring board facing the semiconductor chip side, and has a side surface exposed from the side surface of the sealing resin,
The semiconductor device wherein the side surface of the first electrode forms the same surface as the side surface of the sealing resin and is in contact with the shield resin. The semiconductor device according to claim 2,
The wiring substrate has a side surface forming the same surface as the side surface of the first electrode,
The shield resin has a first portion formed along the same surface,
A semiconductor device in which a lower end of the first portion of the shielding resin is located below the first surface of the wiring board in a thickness direction of the wiring board. The semiconductor device according to claim 3.
The wiring board has a convex portion on the side surface,
The semiconductor device in which the lower end of the first portion of the shield resin reaches the convex portion in the thickness direction of the wiring board. In the semiconductor device according to any one of claims 2 to 4,
An external connection electrode that is formed on a second surface of the wiring board opposite to the first surface and is electrically connected to the first electrode;
The semiconductor device, wherein the external connection electrode overlaps at least a part of the semiconductor chip when viewed from a direction perpendicular to the wiring board. The semiconductor device according to claim 5,
When viewed from a direction perpendicular to the wiring board, the external connection electrode includes the semiconductor chip inside. A semiconductor device;
A mounting substrate on which the semiconductor device is mounted;
With
The semiconductor device includes:
A wiring board;
A semiconductor chip mounted on the wiring board and having a photoelectric conversion portion on a surface opposite to the wiring board;
A sealing resin that seals the semiconductor chip and has translucency;
Sealing the surface of the sealing resin, and a shielding resin having a light shielding property and conductivity;
An opening that is formed in the shield resin and at least partially overlaps the photoelectric conversion unit when viewed from a direction perpendicular to the wiring board;
A first electrode provided on the wiring board and electrically connected to the shield resin;
An electronic device comprising: The electronic device according to claim 7.
The electronic device is mounted on the mounting substrate in a direction in which a surface of the wiring substrate opposite to the semiconductor chip faces the surface of the mounting substrate. The electronic device according to claim 7.
The wiring board is an electronic device mounted on the mounting board such that a surface of the wiring board opposite to the semiconductor chip intersects the surface of the mounting board. The electronic device according to claim 9.
The electronic device in which the sealing resin and the mounting substrate are opposed to each other without the shield resin. Preparing a wiring board having a first electrode and a semiconductor chip having a photoelectric conversion unit;
Mounting the semiconductor chip on the wiring substrate in a direction in which the surface opposite to the photoelectric conversion portion of the semiconductor chip faces the wiring substrate;
Sealing the semiconductor chip with a sealing resin having translucency;
Exposing a part of the surface of the first electrode from the sealing resin by forming a groove in the sealing resin so that a part of the first electrode is removed;
Filling the groove with a shielding resin having light shielding properties and conductivity;
After filling the shield resin, separating the wiring board along the groove,
A method for manufacturing a semiconductor device comprising: In the manufacturing method of the semiconductor device according to claim 11,
The wiring board has the first electrode on the first surface of the wiring board facing the semiconductor chip side,
In the step of forming the groove, a method of manufacturing a semiconductor device in which a lower end of the groove is positioned below the first surface of the wiring board in the thickness direction of the wiring board. In the manufacturing method of the semiconductor device according to claim 12,
In the step of forming the groove, in the thickness direction of the wiring substrate, a lower end of the groove is positioned above a second surface located on the opposite side of the first surface of the wiring substrate. Production method. In the manufacturing method of the semiconductor device according to any one of claims 11 to 13,
In the step of mounting the semiconductor chip on the wiring board, the two semiconductor chips adjacent to each other are mounted on the wiring board,
In the step of forming the groove, the groove is not formed between the two semiconductor chips,
In the step of dividing the wiring substrate into pieces, the method of manufacturing a semiconductor device, wherein the wiring substrate is divided into a unit including one of the two semiconductor chips and a unit including the other of the two semiconductor chips.

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