JP4851706B2 - Photo reflector device with slit - Google Patents

Photo reflector device with slit Download PDF

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JP4851706B2
JP4851706B2 JP2004362672A JP2004362672A JP4851706B2 JP 4851706 B2 JP4851706 B2 JP 4851706B2 JP 2004362672 A JP2004362672 A JP 2004362672A JP 2004362672 A JP2004362672 A JP 2004362672A JP 4851706 B2 JP4851706 B2 JP 4851706B2
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slit
light
photo reflector
receiving element
emitting element
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JP2006173306A (en
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剛 三浦
昭 渡辺
一夫 舟久保
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Citizen Electronics Co Ltd
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Description

本発明は、被検出物の有無又は被検出物の位置を検出するスリット付きフォトリフレクタ装置に関するものである。   The present invention relates to a photo reflector device with a slit that detects the presence or absence of a detection object or the position of the detection object.

フォトリフレクタ装置は、非接触で物体の有無や物体の位置を検出する光センサであり、主な用途は、ビデオ、オーディオ・テープのスタート、エンドマークの検出用センサや、ビデオ、オーディオテープのリール回転検出用センサや、CDプレーヤ及びFDDの位置検出センサや、複写機、プリンターなどの紙検出、タイミング検出用センサや、カメラのフイルム上のマーク検出用センサなど、更に、カメラズーム位置検出用センサや、カメラオートフォーカス位置検出用センサなど、製造設備などの各種検出用途などに適している。その一般的な構成及び原理を説明すると、遮光された発光素子と受光素子を有し、発光素子から照射された光が検知対象の物体に当たって反射され、その反射光を受光素子が検知する。これによって、フォトフレクタ装置の近傍における物体の有無や位置に応じて受光素子側の出力が変化し、これを検出信号として用いるものである。フォトリフレクタは検出部(内蔵されているP−Trの受光エリア)が広く、位置を限定させたい場合は、機構側にスリット機構を設けている。   The photoreflector device is an optical sensor that detects the presence or absence of an object and the position of an object in a non-contact manner, and its main applications are video and audio tape start and end mark detection sensors and video and audio tape reels. Rotation detection sensor, CD player and FDD position detection sensor, copier, printer paper detection, timing detection sensor, camera film mark detection sensor, and other camera zoom position detection sensor It is suitable for various detection applications such as manufacturing equipment such as a camera autofocus position detection sensor. The general configuration and principle will be described. The light-emitting element and the light-receiving element are shielded from light. The light emitted from the light-emitting element strikes an object to be detected and is reflected, and the light-receiving element detects the reflected light. As a result, the output on the light receiving element side changes according to the presence or absence and position of an object in the vicinity of the photoreflector device, and this is used as a detection signal. The photo reflector has a wide detection part (internal P-Tr light-receiving area), and a slit mechanism is provided on the mechanism side when the position is to be limited.

従来より知られているフォトフレクタ装置の例として、絶縁基板の上面に一対の発光素子と受光素子を実装し、発光素子と受光素子を囲むように遮光枠を配設した構造のものがある。(例えば、特許文献1参照)
特開2001−156325号公報(第2頁、図6)
As an example of a conventionally known photoreflector device, there is a structure in which a pair of light emitting elements and a light receiving element are mounted on an upper surface of an insulating substrate, and a light shielding frame is disposed so as to surround the light emitting element and the light receiving element. (For example, see Patent Document 1)
JP 2001-156325 A (second page, FIG. 6)

上記した特許文献1に開示されているフォトフレクタ装置は、図8及び図9に示すように、20は、SMD型フォトリフレクタであり、その構造について説明する。21は、絶縁基板であり、22は、発光ダイオード(以下、LEDという)などの発光素子であり、前記絶縁基板21上に設けられた図示しない一対の電極の一方の電極上にダイボンド接着され、他方の電極に金線などによりワイヤーボンドされている。23、はフォトトランジスタなどよりなる受光素子であり、図示しない他の一対の電極の一方の電極上にダイボンド接着され、他方の電極に金線などによりワイヤーボンドされている。24は、前記発光素子22と受光素子23を囲むように前記絶縁基板21上に取り付けられる遮光性のプラスチックなどよりなる遮光枠であり、前記発光素子22と受光素子23の発光、受光方向を規制するものである。25は、透光性樹脂よりなる封止樹脂で、発光素子22と受光素子23を覆い、これらを封止するものである。   As shown in FIGS. 8 and 9, the photoreflector device disclosed in Patent Document 1 is an SMD type photoreflector, and the structure thereof will be described. 21 is an insulating substrate, 22 is a light emitting element such as a light emitting diode (hereinafter referred to as LED), and is die-bonded on one of a pair of electrodes (not shown) provided on the insulating substrate 21; The other electrode is wire-bonded with a gold wire or the like. Reference numeral 23 denotes a light receiving element made of a phototransistor or the like, which is die-bonded to one electrode of another pair of electrodes (not shown) and wire-bonded to the other electrode with a gold wire or the like. Reference numeral 24 denotes a light-shielding frame made of light-shielding plastic or the like attached on the insulating substrate 21 so as to surround the light-emitting element 22 and the light-receiving element 23, and regulates the light emission and light-receiving directions of the light-emitting element 22 and the light-receiving element 23. To do. Reference numeral 25 denotes a sealing resin made of a translucent resin, which covers the light emitting element 22 and the light receiving element 23 and seals them.

上記したように、カメラズーム位置検出や、カメラオートフォーカス位置検出などの場合、フォトリフレクタは検出部(内蔵されているP−Trの受光エリア)が広く、位置を限定させたい場合は、機構側にスリット機構を設けている。図10において、26は、実装基板で、該実装基板26上には前記SMD型フォトリフレクタ20が実装されている。27は、測定対象物で、機構側28に取り付けられている。29は、スリット30が形成されているスリット機構である。該スリット機構29は、前記フォトリフレクタ20と測定対象物27の間に介在して、機構側28が矢印F方向に移動して、測定対象物27が前記フォトリフレクタ20の上方の位置に達した時に、発光素子22から照射された光がスリット30を通過して、測定対象物27に当たって反射され、その反射光はスリット30を通過して受光素子23が検知する。このように、機構側にスリット機構を設けることにより、位置検出精度を向上させることができる。   As described above, in the case of camera zoom position detection, camera autofocus position detection, etc., the photo reflector has a wide detection unit (light receiving area of the built-in P-Tr), and if the position is to be limited, the mechanism side Is provided with a slit mechanism. In FIG. 10, reference numeral 26 denotes a mounting board on which the SMD photo reflector 20 is mounted. Reference numeral 27 denotes an object to be measured, which is attached to the mechanism side 28. Reference numeral 29 denotes a slit mechanism in which a slit 30 is formed. The slit mechanism 29 is interposed between the photoreflector 20 and the measurement object 27, the mechanism side 28 moves in the direction of arrow F, and the measurement object 27 reaches a position above the photoreflector 20. Sometimes, light emitted from the light emitting element 22 passes through the slit 30 and is reflected by the measurement object 27, and the reflected light passes through the slit 30 and is detected by the light receiving element 23. Thus, by providing the slit mechanism on the mechanism side, position detection accuracy can be improved.

解決しようとする問題点は、上記したように、機構側にスリット機構を設けることにより、位置検出精度を向上させることができるが、この場合は、スリット機構として、部品点数が増えるだけでなく、機構側の測定対象物との距離も必要になり、セットとしての組込み工数が増えコストアップになる。また、小型化を図ることが困難である。などの大きな問題があった。   The problem to be solved, as described above, can improve the position detection accuracy by providing a slit mechanism on the mechanism side, but in this case, as the slit mechanism, not only the number of parts increases, The distance from the measurement object on the mechanism side is also required, increasing the number of assembly steps as a set and increasing the cost. In addition, it is difficult to reduce the size. There was a big problem.

本発明は、上述した欠点を解消するもので、その目的は、小型で、高位置精度が要求される、スリット付きフォトリフレクタ装置を提供するものである。   The present invention solves the above-described drawbacks, and an object of the present invention is to provide a photoreflector device with a slit that is small and requires high positional accuracy.

上記目的を達成するために、本発明におけるスリット付きフォトリフレクタ装置は、絶縁基板上に形成された導電パターンに実装された発光素子及び受光素子と、該発光素子と受光素子を覆うように透光性の熱硬化系樹脂で封止する封止樹脂と、前記両素子間に光干渉防止機能を有する遮蔽枠を具備するフォトリフレクタで、該フォトリフレクタと被測定物との間にスリット機構を有するフォトリフレクタ装置において、前記フォトリフレクタの両素子側の上面に前記スリット機構を一体的に設けたものであって、前記スリット機構は、薄板に、前記発光素子及び受光素子の上方に位置し、かつ前記発光素子と受光素子を覆う前記封止樹脂を横断するように、一つのスリットを形成したスリット板で、該スリット板を前記フォトリフレクタの両素子側の上面に貼付したことを特徴とするものである。
In order to achieve the above object, a photoreflector device with a slit according to the present invention includes a light emitting element and a light receiving element mounted on a conductive pattern formed on an insulating substrate, and a light transmitting element so as to cover the light emitting element and the light receiving element. A photoreflector comprising a sealing resin that is sealed with a heat-curable thermosetting resin and a shielding frame that has a light interference prevention function between the two elements, and has a slit mechanism between the photoreflector and the object to be measured in the photo-reflector device, the slit mechanism be those provided integrally with the upper surface of both elements side of the photo-reflector, the slit mechanism, the thin plate, positioned above the light emitting element and a light receiving element, and A slit plate in which one slit is formed so as to cross the sealing resin covering the light emitting element and the light receiving element, and the slit plate is connected to the photo reflector. It is characterized in that it has attached to the top surface of the device side.

また、前記スリット機構は、前記フォトリフレクタの両素子側の上面に、前記スリット部をマスクし、他の開口部に蒸着膜を施した後、前記マスクを剥がして、スリット蒸着層を設けたことを特徴とするものである。   In addition, the slit mechanism masks the slit portion on the upper surface on both element sides of the photo reflector, and after depositing a vapor deposition film on the other opening, the mask is peeled off to provide a slit vapor deposition layer. It is characterized by.

本発明のスリット付きフォトリフレクタ装置は、前記フォトリフレクタの両素子側の上面に位置限定機能を有するスリット機構を一体的に設けることにより、従来のように、別にスリット機構を設け、セットとして組み込む必要がなく、小型で、安価な、高位置精度を有するスリット付きフォトリフレクタ装置を提供することが可能である。   In the photoreflector device with a slit according to the present invention, a slit mechanism having a position limiting function is integrally provided on the upper surface on both element sides of the photoreflector, so that it is necessary to provide a separate slit mechanism and incorporate it as a set as in the past. It is possible to provide a photoreflector device with a slit that is small, inexpensive, and has high positional accuracy.

本発明のスリット付きフォトリフレクタ装置について、図面に基づいて説明する。   The photo reflector device with slits of the present invention will be described with reference to the drawings.

図1及び図2は、本発明の実施例1に係わり、図1は、スリット付きフォトリフレクタ装置の平面図、図2は、図1のA−A線断面図である。図1及び図2において、1は、スリット板を貼付したスリット付きフォトリフレクタ装置であり、2は、ガラスエポキシ樹脂などよりなる平面が略長方形形状をした絶縁基板で、その上面には図示しない所定の導電パターンと、下面には外部接続用電極と、前記上下面電極を接続するスルーホール電極が形成されている。該絶縁基板2の上面側の所定位置に、赤外LEDからなる発光素子3を実装すると共に、フォトトランジスタ又はフォトダイオードからなる受光素子4を実装しており、図示しない導電パターンにダイボンド接着され、金属細線でワイヤーボンディングされ電気的に接続されている。   1 and 2 relate to Embodiment 1 of the present invention, FIG. 1 is a plan view of a photoreflector device with a slit, and FIG. 2 is a cross-sectional view taken along line AA of FIG. 1 and 2, reference numeral 1 denotes a photoreflector device with a slit to which a slit plate is attached. Reference numeral 2 denotes an insulating substrate having a substantially rectangular plane made of glass epoxy resin or the like. On the lower surface, an external connection electrode and a through-hole electrode for connecting the upper and lower surface electrodes are formed. A light emitting element 3 made of an infrared LED and a light receiving element 4 made of a phototransistor or a photodiode are mounted at a predetermined position on the upper surface side of the insulating substrate 2 and are die-bonded to a conductive pattern (not shown). It is wire-bonded with a thin metal wire and electrically connected.

前記発光素子3と受光素子4を囲むように前記絶縁基板2上に取り付けられる遮光性のプラスチックなどよりなる遮光枠5を配設し、前記発光素子3と受光素子4を可視光カット剤入りエポキシ系の透光性樹脂よりなる封止樹脂6で封止するものであり、従来のフォトリフレクタと同様である。   A light shielding frame 5 made of light shielding plastic or the like attached on the insulating substrate 2 is disposed so as to surround the light emitting element 3 and the light receiving element 4, and the light emitting element 3 and the light receiving element 4 are epoxy containing a visible light cut agent. It is sealed with a sealing resin 6 made of a translucent resin, and is similar to a conventional photo reflector.

本実施例1の特徴とするところは、遮光性を有する薄板、例えば、板厚=0.1〜0.2mmの所定位置に、スリット7、例えば、スリット幅=0.1〜0.2mmを形成したスリット板8を前記フォトリフレクタの両素子側の上面に一体的に貼付する。   A feature of the first embodiment is that a thin plate having a light shielding property, for example, a slit 7 such as a slit width = 0.1 to 0.2 mm is provided at a predetermined position of a plate thickness = 0.1 to 0.2 mm. The formed slit plate 8 is integrally attached to the upper surfaces on both element sides of the photo reflector.

従来のフォトリフレクタの上面にスリット板8を貼付することにより、部品点数が減少すると同時に、スリット機構をセットとして組み込む工数が不要となり安価になる。また、被検出物との距離も必要としないので小型で、高位置精度を有するスリット付きフォトリフレクタ装置を得ることができる。   By attaching the slit plate 8 to the upper surface of the conventional photoreflector, the number of parts is reduced, and at the same time, the number of steps for incorporating the slit mechanism as a set becomes unnecessary and the cost is reduced. Further, since a distance from the object to be detected is not required, a photoreflector device with a slit having a small size and high positional accuracy can be obtained.

図3及び図4は、本発明の実施例2に係わり、図3は、スリット付きフォトリフレクタ装置の平面図、図4は、図3のB−B線断面図である。図3及び図4において、上記した実施例1と異なるところは、前記スリット板8の代わりに、フォトリフレクタ装置の上面において、スリット9に相当するマスク部10を設け、他の開口部に蒸着膜11を施した後、前記マスク部10を剥がして、スリット蒸着層12を設けることにより、スリット付きフォトリフレクタ装置1Aを得ることができる。   3 and 4 relate to Embodiment 2 of the present invention, FIG. 3 is a plan view of a photoreflector device with a slit, and FIG. 4 is a cross-sectional view taken along line BB in FIG. 3 and 4, the difference from the first embodiment described above is that, instead of the slit plate 8, a mask portion 10 corresponding to the slit 9 is provided on the upper surface of the photoreflector device, and a vapor deposition film is formed at the other opening. 11, the mask portion 10 is peeled off, and the slit vapor deposition layer 12 is provided to obtain a photoreflector device 1A with a slit.

上記した実施例1の効果と同様に、小型で、安価な、高位置精度を有するスリット付きフォトリフレクタ装置を得ることができる。   Similar to the effect of the first embodiment described above, it is possible to obtain a photoreflector device with a slit that is small and inexpensive and has high positional accuracy.

図5〜図7は、本発明の実施例3に係わり、図5は、スリット付きフォトリフレクタ装置の平面図、図6は、図5のC−C線断面図、図7は、図5のD−D線断面図である。
図5〜図7において、上記した実施例1及び実施例2と異なるところは、上面樹脂部を2色成形する。即ち、可視光カット剤入りエポキシ系の透光性樹脂よりなる封止樹脂6を覆うように、前記非透光性樹脂よりなり、所定の位置にスリット13を形成したスリット付き遮蔽枠14を設けることにより、スリット付きフォトリフレクタ装置1Bを得ることができる。
5 to 7 relate to a third embodiment of the present invention, FIG. 5 is a plan view of a photoreflector device with a slit, FIG. 6 is a cross-sectional view taken along the line CC of FIG. It is DD sectional view taken on the line.
5 to 7, the difference from the first and second embodiments is that the upper surface resin portion is molded in two colors. That is, a shielding frame 14 with a slit made of the non-translucent resin and having a slit 13 formed at a predetermined position is provided so as to cover the sealing resin 6 made of an epoxy-based translucent resin containing a visible light cut agent. Thereby, the photo reflector device 1B with a slit can be obtained.

上記した実施例1及び実施例2の効果と同様に、小型で、安価な、高位置精度を有するスリット付きフォトリフレクタ装置を得ることができる。   Similar to the effects of the first and second embodiments described above, it is possible to obtain a photoreflector device with a slit that is small and inexpensive and has high positional accuracy.

以上述べたように、スリットの形成は、発光側と受光側の両方に設けたが、受光側にのみスリット機構を施すだけでも、十分効果を得ることができる。   As described above, the slits are formed on both the light-emitting side and the light-receiving side, but a sufficient effect can be obtained only by providing the slit mechanism only on the light-receiving side.

また、SMD型フォトリフレクタ装置について説明したが、本発明のスリット付きフォトリフレクタ装置はSMD型に限るものではない。   Moreover, although the SMD type photo reflector device has been described, the photo reflector device with a slit according to the present invention is not limited to the SMD type.

本発明の実施例1に係わるスリット付きフォトリフレクタ装置の平面図である。It is a top view of the photo reflector device with a slit concerning Example 1 of the present invention. 図1のA−A線断面図である。It is the sectional view on the AA line of FIG. 本発明の実施例2に係わるスリット付きフォトリフレクタ装置の平面図である。It is a top view of the photo reflector device with a slit concerning Example 2 of the present invention. 図3のB−B線断面図である。FIG. 4 is a sectional view taken along line BB in FIG. 3. 本発明の実施例3に係わるスリット付きフォトリフレクタ装置の平面図である。It is a top view of the photo reflector device with a slit concerning Example 3 of the present invention. 図5のC−C線断面図である。It is CC sectional view taken on the line of FIG. 図5のD―D線断面図である。FIG. 6 is a sectional view taken along the line DD in FIG. 5. 従来のフォトリフレクタ装置の平面図である。It is a top view of the conventional photoreflector apparatus. 図8のE−E線断面図である。It is the EE sectional view taken on the line of FIG. 図8のフォトリフレクタ装置と測定対象物の間にスリット機構を介在させた状態の説明図である。It is explanatory drawing of the state which interposed the slit mechanism between the photo reflector apparatus of FIG. 8, and a measuring object.

符号の説明Explanation of symbols

1、1A、1B スリット付きフォトリフレクタ装置
2 絶縁基板
3 発光素子
4 受光素子
5 遮蔽枠
6 封止樹脂
7、9、13 スリット
8 スリット板
11 蒸着層
12 スリット蒸着層
14 スリット遮光枠

DESCRIPTION OF SYMBOLS 1, 1A, 1B Photo reflector device with a slit 2 Insulating substrate 3 Light emitting element 4 Light receiving element 5 Shielding frame 6 Sealing resin 7, 9, 13 Slit 8 Slit plate 11 Vapor deposition layer 12 Slit vapor deposition layer 14 Slit light shielding frame

Claims (2)

絶縁基板上に形成された導電パターンに実装された発光素子及び受光素子と、該発光素子と受光素子を覆うように透光性の熱硬化系樹脂で封止する封止樹脂と、前記両素子間に光干渉防止機能を有する遮蔽枠を具備するフォトリフレクタで、該フォトリフレクタと被測定物との間にスリット機構を有するフォトリフレクタ装置において、前記フォトリフレクタの両素子側の上面に前記スリット機構を一体的に設けたものであって、前記スリット機構は、薄板に、前記発光素子及び受光素子の上方に位置し、かつ前記発光素子と受光素子を覆う前記封止樹脂を横断するように、一つのスリットを形成したスリット板で、該スリット板を前記フォトリフレクタの両素子側の上面に貼付したことを特徴とするスリット付きフォトリフレクタ装置。   A light-emitting element and a light-receiving element mounted on a conductive pattern formed on an insulating substrate; a sealing resin that is sealed with a light-transmitting thermosetting resin so as to cover the light-emitting element and the light-receiving element; A photo reflector having a shielding frame having an optical interference prevention function between the photo reflector and a measured object, wherein the slit mechanism is provided on the upper surfaces of both elements of the photo reflector. The slit mechanism is disposed on a thin plate above the light emitting element and the light receiving element, and crosses the sealing resin that covers the light emitting element and the light receiving element. A photo reflector device with a slit, wherein a slit plate is formed with a single slit, and the slit plate is affixed to the upper surfaces of both elements of the photo reflector. 前記スリット機構は、前記フォトリフレクタの両素子側の上面に、前記スリット部をマスクし、他の開口部に蒸着膜を施した後、前記マスクを剥がして、スリット蒸着層を設けたことを特徴とする請求項1記載のスリット付きフォトリフレクタ装置。
The slit mechanism is characterized in that the slit portion is masked on the upper surface on both elements side of the photo reflector, and after depositing a deposition film on the other opening, the mask is peeled off to provide a slit deposition layer. The photo reflector device with a slit according to claim 1.
JP2004362672A 2004-12-15 2004-12-15 Photo reflector device with slit Expired - Fee Related JP4851706B2 (en)

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JP5172113B2 (en) * 2006-07-19 2013-03-27 新日本無線株式会社 Manufacturing method of light emitting / receiving element
JP4999595B2 (en) * 2007-08-04 2012-08-15 新日本無線株式会社 Reflective photo sensor
JP4999596B2 (en) * 2007-08-04 2012-08-15 新日本無線株式会社 Reflective photo sensor
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JP5762778B2 (en) * 2011-03-09 2015-08-12 ローム株式会社 Optical device
JP5993564B2 (en) 2011-07-13 2016-09-14 新日本無線株式会社 Position detection device using a reflective photosensor
JP6081830B2 (en) * 2013-03-12 2017-02-15 新日本無線株式会社 Position detection device using a reflective photosensor
CN112603537A (en) * 2020-12-10 2021-04-06 昆山雷盛医疗科技有限公司 Interventional instrument interventional depth detection system and movement detection device

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