JP2000058924A - Surface mounting-type light emitting diode and its manufacture - Google Patents
Surface mounting-type light emitting diode and its manufactureInfo
- Publication number
- JP2000058924A JP2000058924A JP10222907A JP22290798A JP2000058924A JP 2000058924 A JP2000058924 A JP 2000058924A JP 10222907 A JP10222907 A JP 10222907A JP 22290798 A JP22290798 A JP 22290798A JP 2000058924 A JP2000058924 A JP 2000058924A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- emitting diode
- light emitting
- diode element
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、マザーボードの表
面に直接実装される表面実装型発光ダイオード及びその
製造方法に関するものである。[0001] 1. Field of the Invention [0002] The present invention relates to a surface mount type light emitting diode directly mounted on a surface of a motherboard and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】従来、この種の表面実装型発光ダイオー
ドとしては、例えば図１３乃至図１６に示したタイプの
ものが知られている。図１３及び図１４に示した前者の
従来例は液晶ポリマを基板１として用いたもので、ブロ
ック状の基板１の上面に反射カップとしての凹部８を設
け、この凹部８の内周面に沿ってダイボンド電極パター
ン２とワイヤボンド電極パターン３とを分割形成し、凹
部８内に配置した発光ダイオード素子５をダイボンド電
極パターン２上に導電性接着剤４を用いて固着すると共
に、発光ダイオード素子５と前記ワイヤボンド電極パタ
ーン３とをボンディングワイヤ６によって接続し、最後
に凹部８内にエポキシ樹脂７を充填して発光ダイオード
素子５及びボンディングワイヤ６を封止した構造のもの
である。2. Description of the Related Art Conventionally, as this type of surface mount type light emitting diode, for example, the type shown in FIGS. 13 to 16 is known. In the former conventional example shown in FIGS. 13 and 14, a liquid crystal polymer is used as the substrate 1, and a concave portion 8 as a reflection cup is provided on the upper surface of the block-shaped substrate 1, and the concave portion 8 extends along the inner peripheral surface of the concave portion 8. The die bond electrode pattern 2 and the wire bond electrode pattern 3 are divided and formed, and the light emitting diode element 5 arranged in the concave portion 8 is fixed on the die bond electrode pattern 2 by using the conductive adhesive 4. And the wire bond electrode pattern 3 are connected by a bonding wire 6, and finally, the recess 8 is filled with an epoxy resin 7 to seal the light emitting diode element 5 and the bonding wire 6.
【０００３】また、図１５及び図１６に示した後者の従
来例は基板１にガラスエポキシ樹脂を用いたものであ
り、基板１の平滑上面にダイボンド電極パターン２とワ
イヤボンド電極パターン３とを形成し、ダイボンド電極
パターン２上に載置した発光ダイオード素子５を導電性
接着剤４でダイボンドすると共に、発光ダイオード素子
５とワイヤボンド電極パターン３とをボンディングワイ
ヤ６によって接続し、最後に発光ダイオード素子５及び
ボンディングワイヤ６をエポキシ樹脂７によって封止し
た構造のものである。In the latter conventional example shown in FIGS. 15 and 16, a glass epoxy resin is used for the substrate 1, and a die bond electrode pattern 2 and a wire bond electrode pattern 3 are formed on the smooth upper surface of the substrate 1. Then, the light emitting diode element 5 mounted on the die bond electrode pattern 2 is die-bonded with the conductive adhesive 4, and the light emitting diode element 5 and the wire bond electrode pattern 3 are connected by the bonding wire 6. 5 and a bonding wire 6 are sealed with an epoxy resin 7.
【０００４】[0004]
【発明が解決しようとする課題】ところで、上記発光ダ
イオード素子５が発光する際、光として有効に作用する
のは３〜７％程度であり、残りの９０％以上は熱となっ
て消費されてしまう。そのため、上記従来のように基板
１が液晶ポリマやガラスエポキシ樹脂等でブロック状に
形成されている場合には、基板１の熱伝達効率が非常に
悪く、発光ダイオード素子５から基板１に伝達された熱
が十分に放熱されずに内部にこもってしまい、結果的に
発光ダイオード素子５の寿命を縮めたり、発光輝度を低
下させるといった問題があった。When the light emitting diode element 5 emits light, only about 3 to 7% of the light effectively acts as light, and the remaining 90% or more is consumed as heat. I will. Therefore, when the substrate 1 is made of a liquid crystal polymer or a glass epoxy resin or the like in a block shape as in the above-described conventional case, the heat transfer efficiency of the substrate 1 is extremely poor, and the heat transfer from the light emitting diode element 5 to the substrate 1 is performed. The resulting heat is not sufficiently dissipated and is trapped inside, resulting in a problem that the life of the light emitting diode element 5 is shortened and the light emission luminance is reduced.
【０００５】そこで本発明は、発光ダイオード素子を載
置する基板の放熱効果を高めることによって、発光ダイ
オード素子の寿命を延ばすと共に発光輝度の低下を抑え
ること、また安価な基板を用いることでコストダウンを
図ることを目的とする。Accordingly, the present invention is to increase the heat radiation effect of the substrate on which the light emitting diode element is mounted, thereby prolonging the life of the light emitting diode element and suppressing a decrease in light emission luminance, and reducing the cost by using an inexpensive substrate. The purpose is to plan.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に、本発明の請求項１に係る表面実装型発光ダイオード
は、薄板金属からなる基板に一対の電極を形成し、基板
上に載置した発光ダイオード素子の各電極と前記基板上
の各電極とを電気的に接続すると共に、前記発光ダイオ
ード素子及び前記電気的接続部分を樹脂封止したことを
特徴とする。According to a first aspect of the present invention, there is provided a surface mount type light emitting diode having a pair of electrodes formed on a thin metal substrate and mounted on the substrate. Each of the electrodes of the light-emitting diode element and each of the electrodes on the substrate are electrically connected, and the light-emitting diode element and the electrical connection portion are resin-sealed.
【０００７】また、本発明の請求項２に係る表面実装型
発光ダイオードは、薄板金属からなる基板に一対の電極
を形成し、一方の電極側に発光ダイオード素子を載置す
るための凹部を設けると共に、この凹部に載置した発光
ダイオード素子と基板の他方の電極とをボンディングワ
イヤで接続し、発光ダイオード素子及びボンディングワ
イヤを樹脂封止したことを特徴とする。According to a second aspect of the present invention, there is provided a surface mount type light emitting diode in which a pair of electrodes are formed on a substrate made of a thin metal, and a concave portion for mounting a light emitting diode element is provided on one electrode side. In addition, the light emitting diode element mounted in the recess and the other electrode of the substrate are connected by a bonding wire, and the light emitting diode element and the bonding wire are sealed with a resin.
【０００８】また、本発明の請求項３に係る表面実装型
発光ダイオードは、薄板金属からなるフラット基板に一
対の電極を形成し、一方の電極上に発光ダイオード素子
を載置すると共に、この発光ダイオード素子と基板の他
方の電極とをボンディングワイヤで接続し、発光ダイオ
ード素子及びボンディングワイヤを樹脂封止したことを
特徴とする。According to a third aspect of the present invention, there is provided a surface mount type light emitting diode comprising a pair of electrodes formed on a flat substrate made of a thin metal plate, a light emitting diode element mounted on one of the electrodes, and a light emitting diode mounted on the electrode. The diode element and the other electrode of the substrate are connected by a bonding wire, and the light emitting diode element and the bonding wire are resin-sealed.
【０００９】また、本発明の請求項４に係る表面実装型
発光ダイオードは、上記薄板金属が厚さ０．５ｍｍ以下
の熱伝導性の優れた材質であることを特徴とする。The surface-mounted light emitting diode according to a fourth aspect of the present invention is characterized in that the thin metal is a material having a thickness of 0.5 mm or less and having excellent thermal conductivity.
【００１０】また、本発明の請求項５に係る表面実装型
発光ダイオードの製造方法は、薄板金属からなる集合基
板にスリットを設けて各単一基板毎に一対の電極を形成
するスリット形成工程と、前記スリットを被うようにし
て集合基板の裏面側に耐熱性樹脂フィルムを貼付するフ
ィルム貼付工程と、集合基板の各単一基板毎に、スリッ
トで分けられた一方の電極上に発光ダイオード素子を載
置するダイボンド工程と、前記ダイボンドされた発光ダ
イオード素子と、基板の他方の電極とをボンディングワ
イヤで接続するワイヤボンド工程と、前記集合基板の全
面に封止樹脂を充填して発光ダイオード素子及びボンデ
ィングワイヤを封止する樹脂封止工程と、前記樹脂封止
された集合基板を分割ラインに沿って各基板毎にダイシ
ングする分割工程とを備えたことを特徴とする。According to a fifth aspect of the present invention, there is provided a method for manufacturing a surface mount type light emitting diode, comprising the steps of: forming a slit in an aggregate substrate made of a thin metal plate; and forming a pair of electrodes for each single substrate. A film attaching step of attaching a heat-resistant resin film to the back side of the collective substrate so as to cover the slit, and for each single substrate of the collective substrate, a light-emitting diode element on one electrode divided by the slit. A die-bonding step of mounting a light-emitting diode element, a wire-bonding step of connecting the die-bonded light-emitting diode element and the other electrode of the substrate with a bonding wire, and filling the entire surface of the collective substrate with a sealing resin. And a resin sealing step of sealing the bonding wires, and a dividing step of dicing the resin-sealed collective substrate for each substrate along a dividing line Characterized by comprising a.
【００１１】また、本発明の請求項６に係る表面実装型
発光ダイオードの製造方法は、薄板金属をプレス加工し
て、各単一基板毎に発光ダイオード素子を載置するため
の凹部を形成する集合基板形成工程と、前記集合基板に
スリットを設けて各単一基板毎に一対の電極を形成する
スリット形成工程と、前記スリットを被うようにして集
合基板の裏面側に耐熱性樹脂フィルムを貼付するフィル
ム貼付工程と、集合基板の各単一基板毎に、凹部の底面
に発光ダイオード素子を載置するダイボンド工程と、前
記ダイボンドされた発光ダイオード素子と、基板の他方
の電極とをボンディングワイヤで接続するワイヤボンド
工程と、前記集合基板の全面に封止樹脂を充填して発光
ダイオード素子及びボンディングワイヤを封止する樹脂
封止工程と、前記樹脂封止された集合基板を分割ライン
に沿って各基板毎にダイシングする分割工程とを備えた
ことを特徴とする。According to a sixth aspect of the present invention, there is provided a method of manufacturing a surface mount type light emitting diode, wherein a thin metal plate is pressed to form a recess for mounting a light emitting diode element for each single substrate. An aggregate substrate forming step, a slit forming step of forming a pair of electrodes for each single substrate by providing a slit in the aggregate substrate, and forming a heat-resistant resin film on the back side of the aggregate substrate so as to cover the slit. A film attaching step of attaching, a die bonding step of mounting a light emitting diode element on the bottom surface of the concave portion for each single substrate of the collective substrate, and a bonding wire connecting the die-bonded light emitting diode element and the other electrode of the substrate. A resin bonding step of filling the entire surface of the collective substrate with a sealing resin to seal the light emitting diode elements and the bonding wires; Characterized by comprising a dividing step of dicing the Aburafu sealed collective substrate along the dividing line for each substrate.
【００１２】[0012]
【発明の実施の形態】以下、添付図面に基づいて本発明
に係る表面実装型発光ダイオード及び製造方法の実施例
を詳細に説明する。図１及び図２は、本発明に係る表面
実装型発光ダイオード１０の一実施例を示したものであ
る。この図において、符号１１は厚さが０．１〜０．２
ｍｍ程度の銅、鉄、りん青銅など熱伝導率の良い薄板金
属をプレス成形することによって形成された基板であ
る。この基板１１は断面略台形状に形成されており、上
面１２中央部にはすり鉢状の凹部１３が絞り加工によっ
て形成されている。また、上面１２の左右両側には傾斜
面２０ａ，２０ｂを介して水平下面１７ａ，１７ｂが形
成され、その一方の水平下面１７ａ上に小突起１８がエ
ンボス成形されている。前記凹部１３は、発光ダイオー
ド素子１４が載置される円形状の底面１５と、この底面
１５から外方に傾斜しながら立ち上がる内周面１６とで
構成されており、特に内周面１６には発光ダイオード素
子１４から発した光の反射率を上げるための鏡面処理が
施されていて反射カップとして作用する。なお、前記内
周面１６の傾斜角度は、基板１１の上面１２に対して４
５°、もしくはそれよりやや小さい角度が望ましく、発
光ダイオード素子１４からの光の拡散を抑えてできるだ
け上方へ導かれるようにする。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a surface mount type light emitting diode according to the present invention. FIG. 1 and FIG. 2 show an embodiment of a surface-mounted light emitting diode 10 according to the present invention. In this figure, reference numeral 11 denotes a thickness of 0.1 to 0.2.
It is a substrate formed by press-molding a thin metal plate having a good thermal conductivity such as copper, iron, phosphor bronze, etc. of about mm. The substrate 11 has a substantially trapezoidal cross section, and a mortar-shaped recess 13 is formed at the center of the upper surface 12 by drawing. Horizontal lower surfaces 17a and 17b are formed on both left and right sides of the upper surface 12 via inclined surfaces 20a and 20b, and small projections 18 are embossed on one of the horizontal lower surfaces 17a. The recess 13 includes a circular bottom surface 15 on which the light-emitting diode element 14 is mounted, and an inner peripheral surface 16 rising from the bottom surface 15 while being inclined outward. The mirror surface treatment for increasing the reflectance of the light emitted from the light emitting diode element 14 has been performed and acts as a reflection cup. The inclination angle of the inner peripheral surface 16 is 4 degrees with respect to the upper surface 12 of the substrate 11.
An angle of 5 ° or a slightly smaller angle is desirable, and diffusion of light from the light emitting diode element 14 is suppressed so that the light is guided upward as much as possible.
【００１３】また、上記小突起１８が形成されている水
平下面１７ａには、傾斜面２０ａの下端近傍に沿ってス
リット１９が形成されており、このスリット１９によっ
て基板１１を左右に分離している。基板１１全体が薄板
金属で形成されることから、スリット１９を境にして基
板１１の凹部１３側の全体がダイボンド電極として、ま
た基板１１の小突起１８側の全体がワイヤボンド電極と
してそれぞれ形成されることになる。この実施例では薄
板金属にメッキが施されており、基板１１の光反射効率
を上げたり、錆の発生等を防止して導電性を確実にして
いる。なお、メッキは、例えば下地にニッケルメッキを
用い、その上に銀メッキを施すなど公知の手段で行なえ
る。A slit 19 is formed on the horizontal lower surface 17a where the small projection 18 is formed, along the vicinity of the lower end of the inclined surface 20a, and the slit 19 divides the substrate 11 left and right. . Since the entire substrate 11 is formed of thin metal, the entirety of the concave portion 13 of the substrate 11 with the slit 19 as a boundary is formed as a die bond electrode, and the entirety of the small protrusion 18 of the substrate 11 is formed as a wire bond electrode. Will be. In this embodiment, the thin metal is plated to increase the light reflection efficiency of the substrate 11 and to prevent the occurrence of rust and the like, thereby ensuring the conductivity. The plating can be performed by a known means such as, for example, using nickel plating as a base and silver plating thereon.
【００１４】上記基板１１の凹部１３に配置される発光
ダイオード素子１４は略立方体形状の微小チップであ
り、下面と上面にそれぞれ電極を有する。そして、下面
電極が凹部１３の底面１５に導電性接着剤２１によって
固着されると共に、上面電極がボンディングワイヤ２２
によって小突起１８に接続されている。また、基板１１
の裏面には左右の水平下面の外縁部を除いて耐熱性フィ
ルム３２が貼付されている。この耐熱性フィルム３２
は、上記発光ダイオード素子１４及びボンディングワイ
ヤ２２をエポキシ樹脂２３によって封止する際に、スリ
ット１９から裏面側にエポキシ樹脂２３が流れ込むのを
防止すると共に、スリット１９によって左右に分離され
たダイボンド電極側とワイヤボンド電極側とをつなぎと
める働きをする。即ち、集合体のダイシングによって個
々のチップに分割された表面実装型発光ダイオード１０
は、基板１１のダイボンド電極側とワイヤボンド電極側
がスリット１９によって分離され、両者は封止用樹脂の
エポキシ樹脂２３のみで連結されているだけである。こ
のため、この表面実装型発光ダイオード１０をマザーボ
ード基板にリフロー実装する際、半田の加熱によりエポ
キシ樹脂２３が膨張して基板１１が左右に開きボンディ
ングワイヤ２２が断線するおそれがある。この対策とし
て、基板１１の裏面に耐熱性フィルム３２を貼付するこ
とで基板１１の左右の開きを防止することができる。耐
熱性フィルム３２の厚さは５０μｍ以下が望ましい。ま
た、フィルム中に無機系フィラを混ぜることでフィルム
の線膨張係数を低く抑えることができるので、基板１１
の金属の線膨張係数にできるだけ近づけることによっ
て、基板１１の開き防止効果がより一層発揮される。The light emitting diode element 14 disposed in the concave portion 13 of the substrate 11 is a small chip having a substantially cubic shape, and has electrodes on the lower surface and the upper surface, respectively. Then, the lower surface electrode is fixed to the bottom surface 15 of the concave portion 13 by the conductive adhesive 21 and the upper surface electrode is bonded to the bonding wire 22.
Is connected to the small projection 18. Also, the substrate 11
A heat-resistant film 32 is adhered to the back surface of each of them except for the outer edges of the left and right horizontal lower surfaces. This heat resistant film 32
When the light emitting diode element 14 and the bonding wire 22 are sealed with the epoxy resin 23, the epoxy resin 23 is prevented from flowing from the slit 19 to the back surface side, and the die bond electrode side separated left and right by the slit 19 is formed. And the wire bond electrode side. That is, the surface-mounted light emitting diode 10 divided into individual chips by dicing the assembly
Is that the die bond electrode side and the wire bond electrode side of the substrate 11 are separated by a slit 19, and both are connected only by an epoxy resin 23 as a sealing resin. Therefore, when the surface-mounted light-emitting diode 10 is mounted on the motherboard substrate by reflow mounting, the epoxy resin 23 expands due to the heating of the solder, and the substrate 11 opens to the left and right, and the bonding wires 22 may be disconnected. As a countermeasure, by attaching the heat-resistant film 32 to the back surface of the substrate 11, the left and right sides of the substrate 11 can be prevented. The thickness of the heat-resistant film 32 is desirably 50 μm or less. Also, by mixing the inorganic filler in the film, the coefficient of linear expansion of the film can be suppressed low.
By making the coefficient of linear expansion of the metal as close as possible, the effect of preventing the opening of the substrate 11 is further exhibited.
【００１５】このような構成からなる表面実装型発光ダ
イオード１０にあっては、発光ダイオード素子１４から
発した光は、そのまま上方に直進する他、反射カップで
ある凹部１３の内周面１６での反射を受けて上方を強く
照らすことができる。In the surface-mounted light-emitting diode 10 having such a configuration, the light emitted from the light-emitting diode element 14 goes straight upward as it is, and the light is emitted from the inner peripheral surface 16 of the concave portion 13 serving as a reflection cup. The reflection can illuminate the upper part strongly.
【００１６】 図３は、上記構成からなる表面実装型発
光ダイオード１０をマザーボード２６に実装した時の断
面図である。マザーボード２６の上面に形成されている
電極パターン２７ａ，２７ｂ上に表面実装型発光ダイオ
ード１０を上向きに載置し、基板１１の両側の水平下面
１７ａ，１７ｂをマザーボード２６の各電極パターン２
７ａ，２７ｂに半田２８によって接合する。水平下面１
７ａ，１７ｂの外縁部には耐熱性フィルム３２が貼付さ
れてないので、その部分に半田２８が盛られてマザーボ
ート２６と表面実装型発光ダイオード１０との導通が図
られる。このようにしてマザーボード２６に実装された
表面実装型発光ダイオード１０からは上方向に指向性を
有する光が発せられる。また、発光ダイオード素子１４
が発光する際に生じた熱は、基板１１を介してマザーボ
ード２６に伝達されるが、薄板金属からできている基板
１１の熱伝導率が非常によいので、マザーボード２６に
素早く伝わって外部に放熱される。FIG. 3 is a cross-sectional view when the surface-mounted light emitting diode 10 having the above configuration is mounted on the motherboard 26. The surface-mount type light emitting diode 10 is placed upward on the electrode patterns 27a and 27b formed on the upper surface of the motherboard 26, and the horizontal lower surfaces 17a and 17b on both sides of the substrate 11 are respectively
7a and 27b are joined by solder 28. Horizontal lower surface 1
Since the heat-resistant film 32 is not adhered to the outer edges of 7a and 17b, the solder 28 is piled up on the heat-resistant film 32, and conduction between the mother boat 26 and the surface-mount type light emitting diode 10 is achieved. In this manner, light having directivity is emitted upward from the surface-mounted light emitting diode 10 mounted on the motherboard 26. Also, the light emitting diode element 14
The heat generated when the substrate emits light is transmitted to the motherboard 26 via the substrate 11, but since the substrate 11 made of thin metal has a very good thermal conductivity, it is quickly transmitted to the motherboard 26 and radiated to the outside. Is done.
【００１７】図４乃至図８は、上記構成からなる表面実
装型発光ダイオード１０の一製造方法を示したものであ
る。最初の工程では図４に示すように、薄板金属をプレ
ス成形することによって集合基板３１を形成する（工程
１）。この集合基板３１は、同一形状の基板１１の集合
体であり、各基板１１ごとに凹部１３と小突起１８が形
成される。次に、前記凹部１３と小突起１８との間に分
離用のスリット１９を縦方向に長く形成したのち（工程
２）、上記集合基板３１に銀メッキを施す（工程３）。
次に、集合基板３１の下面全体に耐熱性フィルム３２を
貼り付ける（工程４）。この場合、予め耐熱性フィルム
３２には基板１１の水平下面の外縁部に相当する部分に
切欠部３５を設けておき、基板１１の裏面に貼付したと
きに水平下面１７ａ，１７ｂの外縁部には耐熱性フィル
ム３２が被らないようにしておく。FIGS. 4 to 8 show a method of manufacturing the surface-mounted light emitting diode 10 having the above-described structure. In the first step, as shown in FIG. 4, a collective substrate 31 is formed by press-forming a sheet metal (step 1). The aggregate substrate 31 is an aggregate of the substrates 11 having the same shape, and the concave portion 13 and the small protrusion 18 are formed for each substrate 11. Next, a slit 19 for separation is formed between the recess 13 and the small projection 18 in the longitudinal direction so as to be long (Step 2), and then the above-mentioned collective substrate 31 is plated with silver (Step 3).
Next, a heat-resistant film 32 is attached to the entire lower surface of the collective substrate 31 (Step 4). In this case, the heat-resistant film 32 is provided with a notch 35 in advance in a portion corresponding to the outer edge of the horizontal lower surface of the substrate 11, and when the heat-resistant film 32 is attached to the rear surface of the substrate 11, the outer edge of the horizontal lower surface 17 a, 17 b The heat-resistant film 32 is not covered.
【００１８】次いで、図５に示したように、各基板１１
の凹部１３の底面１５に導電性接着剤２１を塗布し、そ
の上に発光ダイオード素子１４をダイボンドする（工程
５）。その後直ちに、集合基板３１をキュア炉に入れて
発光ダイオード素子１４を基板１１に固着する（工程
６）。次いで、発光ダイオード素子１４と小突起１８と
をボンディングワイヤ２２で接続する（工程７）。Next, as shown in FIG.
The conductive adhesive 21 is applied to the bottom surface 15 of the concave portion 13 and the light emitting diode element 14 is die-bonded thereon (step 5). Immediately thereafter, the collective substrate 31 is placed in a cure furnace to fix the light emitting diode elements 14 to the substrate 11 (step 6). Next, the light emitting diode element 14 and the small protrusion 18 are connected by a bonding wire 22 (Step 7).
【００１９】次の工程では、図６に示したように、集合
基板３１の表面全体にトランスファモールド又はキャス
ティングあるいはポッティング等の手段によって熱硬化
性のエポキシ樹脂２３を充填し、発光ダイオード素子１
４及びボンディングワイヤ２２をエポキシ樹脂２３の中
に封止する（工程８）。集合基板３１の下面に耐熱性フ
ィルム３２が貼付されているため、エポキシ樹脂２３が
スリット１９から裏面側に流れ込むことがない。集合基
板３１を再びキュア炉に入れてエポキシ樹脂２３を熱硬
化させる（工程９）。In the next step, as shown in FIG. 6, the entire surface of the collective substrate 31 is filled with a thermosetting epoxy resin 23 by means such as transfer molding, casting or potting.
4 and the bonding wires 22 are sealed in the epoxy resin 23 (step 8). Since the heat-resistant film 32 is adhered to the lower surface of the collective substrate 31, the epoxy resin 23 does not flow from the slit 19 to the back surface side. The collective substrate 31 is put into a curing furnace again to thermally cure the epoxy resin 23 (Step 9).
【００２０】最終工程では、図７に示したように、集合
基板３１に想定されたＸ，Ｙ方向の分割ライン３３，３
４に沿って集合基板３１を桝目状にダイシングし、一つ
一つの表面実装型発光ダイオード１０毎に分割する（工
程１０）。分割された各チップは、自動マウント機によ
って一つ一つが真空吸着されてマザーボード２６上に移
送され、次のマザーボード実装工程へと進む。In the final step, as shown in FIG. 7, the dividing lines 33, 3 in the X and Y directions
The collective substrate 31 is diced in a grid pattern along 4 and divided into individual surface-mounted light-emitting diodes 10 (step 10). Each of the divided chips is vacuum-adsorbed one by one by an automatic mounting machine, transferred to the motherboard 26, and proceeds to the next motherboard mounting step.
【００２１】図９及び図１０は、本発明に係る表面実装
型発光ダイオード１０の第２実施例を示したものであ
る。この実施例では集合基板３１を波形状に形成し、左
右の山部３９ａ，３９ｂにＸ方向の分割ライン３３を設
定することで、谷部４０に発光ダイオード素子１４の載
置部を形成したものである。この谷部４０が反射カップ
として作用し、谷部４０の左右の傾斜面４１ａ，４１ｂ
に発光ダイオード素子１４から発した光が反射して上方
を照射する。また、ボンディングワイヤ２２は発光ダイ
オード素子１４と一方の山部３９ａとの間で接続される
他、この山部３９ａに続く傾斜面４１ａの基端部には前
述と同様のスリット１９が形成されている。なお、スリ
ット１９を含む谷部４０の下面には前記実施例と同様の
耐熱性フィルム３２が貼付されており、また発光ダイオ
ード素子１４及びボンディングワイヤ２２は、基板の上
面に充填されたエポキシ樹脂２３によって封止されてい
る。FIGS. 9 and 10 show a second embodiment of the surface mount type light emitting diode 10 according to the present invention. In this embodiment, the collective substrate 31 is formed in a wave shape and the X-direction dividing line 33 is set in the left and right peaks 39a and 39b, so that the mounting portion of the light emitting diode element 14 is formed in the valley 40. It is. The valley portion 40 functions as a reflection cup, and the left and right inclined surfaces 41a and 41b of the valley portion 40 are provided.
The light emitted from the light emitting diode element 14 is reflected to irradiate the upper side. The bonding wire 22 is connected between the light emitting diode element 14 and one of the ridges 39a, and a slit 19 similar to that described above is formed at the base end of the inclined surface 41a following the ridge 39a. I have. A heat-resistant film 32 similar to that of the above-described embodiment is attached to the lower surface of the valley portion 40 including the slit 19, and the light emitting diode element 14 and the bonding wire 22 are connected to the epoxy resin 23 filled on the upper surface of the substrate. Is sealed by.
【００２２】図１１及び図１２は、本発明に係る表面実
装型発光ダイオード１０の第３実施例を示したものであ
る。この実施例では集合基板３１を平板状に形成し、そ
の上に発光ダイオード素子１４を載置したものである。
分割ライン３３に沿ってダイシングされた各チップの基
板１１には、基板１１をダイボンド電極側とワイヤボン
ド電極側とに分離するスリット１９が形成され、発光ダ
イオード素子１４とワイヤボンド電極側の金属上面とが
ボンディングワイヤ２２によって接続されている。基板
１１の裏面には耐熱性フィルム３２が基板１１の左右両
側を残して貼付されており、また基板１１の上面は直方
体形状のエポキシ樹脂２３によって封止されている。こ
の実施例に係る表面実装型発光ダイオード１０は、上方
だけでなく周囲全体を明るく照らすことができる他、製
造工程が極めて簡易である。FIG. 11 and FIG. 12 show a third embodiment of the surface mount type light emitting diode 10 according to the present invention. In this embodiment, the collective substrate 31 is formed in a flat plate shape, and the light emitting diode elements 14 are mounted thereon.
In the substrate 11 of each chip diced along the division line 33, a slit 19 for separating the substrate 11 into a die bond electrode side and a wire bond electrode side is formed, and the light emitting diode element 14 and the metal upper surface on the wire bond electrode side are formed. Are connected by a bonding wire 22. A heat-resistant film 32 is attached to the back surface of the substrate 11 except for the left and right sides of the substrate 11, and the upper surface of the substrate 11 is sealed with a rectangular parallelepiped epoxy resin 23. The surface-mounted light-emitting diode 10 according to this embodiment can illuminate not only the upper part but also the entire periphery, and the manufacturing process is extremely simple.
【００２３】なお、上記いずれの実施例もボンディング
ワイヤ２２を用いた接続方法について説明したが、この
発明はこれに限定されるものではなく、例えば半田バン
プを用いたフリップチップ実装などの接続方法も含まれ
るものである。In each of the above embodiments, the connection method using the bonding wire 22 has been described. However, the present invention is not limited to this. For example, a connection method such as flip chip mounting using solder bumps is also available. Included.
【００２４】[0024]
【発明の効果】以上説明したように、本発明に係る表面
実装型発光ダイオードによれば、発光ダイオード素子を
載置するための基板を熱伝導効率のよい薄板金属で形成
したので、発光ダイオード素子からの発熱が基板を介し
てマザーボードに素早く伝わって放熱されるため、従来
のように基板の内部に熱がこもってしまうといったこと
がない。その結果、発光ダイオード素子の寿命を延ばす
ことができると共に、発光輝度の低下を抑えることがで
きる。As described above, according to the surface-mount type light emitting diode of the present invention, the substrate on which the light emitting diode element is mounted is formed of a thin metal having good heat conduction efficiency. Since the heat generated from the substrate is quickly transmitted to the motherboard via the substrate and dissipated, the heat does not stay inside the substrate as in the related art. As a result, the life of the light emitting diode element can be prolonged, and a decrease in light emission luminance can be suppressed.
【００２５】また、本発明に係る表面実装型発光ダイオ
ードの製造方法によれば、薄板金属のプレス加工のみで
基板を形成することができるので、従来の液晶ポリマや
ガラスエポキシ樹脂を用いた基板に比べて大幅にコスト
ダウンすることができる。また、薄板金属からなる集合
基板上で一括処理する製造工程を採用したことで、簡単
にしかも大量に表面実装型発光ダイオードを得ることが
でき、大幅なコストダウンが可能で経済的効果が大であ
る。そして、上面実装と側面実装が可能な上、自動マウ
ントも可能であるなど、工数削減や歩留りの向上、更に
は信頼性の向上なども図ることができる。Further, according to the method of manufacturing a surface mount type light emitting diode according to the present invention, since a substrate can be formed only by pressing a thin metal plate, a conventional substrate using a liquid crystal polymer or a glass epoxy resin can be used. The cost can be significantly reduced. In addition, by adopting a manufacturing process that performs batch processing on a collective substrate made of thin metal, surface mount type light emitting diodes can be obtained easily and in large quantities, and significant cost reduction is possible and economic effect is large. is there. In addition, it is possible to reduce man-hours, improve the yield, and further improve the reliability, for example, by enabling top-mounting and side-mounting as well as automatic mounting.
【図１】本発明に係る表面実装型発光ダイオードの第１
実施例を示す斜視図である。FIG. 1 is a first view of a surface mount type light emitting diode according to the present invention.
It is a perspective view showing an example.
【図２】上記図１のＡ−Ａ線断面図である。FIG. 2 is a sectional view taken along line AA of FIG. 1;
【図３】上記実施例に係る表面実装型発光ダイオードを
マザーボードに実装した時の断面図である。FIG. 3 is a cross-sectional view when the surface-mounted light emitting diode according to the embodiment is mounted on a motherboard.
【図４】上記実施例に係る表面実装型発光ダイオードの
集合基板をプレス成形した時の工程図である。FIG. 4 is a process diagram when the collective substrate of the surface-mounted light emitting diode according to the above embodiment is press-molded.
【図５】上記集合基板に発光ダイオード素子をダイボン
ドした時の工程図である。FIG. 5 is a process diagram when a light emitting diode element is die-bonded to the collective substrate.
【図６】上記集合基板上にエポキシ樹脂を充填した時の
工程図である。FIG. 6 is a process chart when an epoxy resin is filled on the collective substrate.
【図７】上記集合基板を分割ラインに沿ってダイシング
する場合の工程図である。FIG. 7 is a process chart in the case of dicing the collective substrate along a dividing line.
【図８】上記実施例に係る表面実装型発光ダイオードの
工程フロー図である。FIG. 8 is a process flow chart of the surface-mounted light emitting diode according to the embodiment.
【図９】本発明に係る表面実装型発光ダイオードの第２
実施例を示す斜視図である。FIG. 9 shows a second example of the surface mount type light emitting diode according to the present invention.
It is a perspective view showing an example.
【図１０】第２実施例に係る表面実装型発光ダイオード
の集合基板を示す製造工程図である。FIG. 10 is a manufacturing process diagram showing an aggregate substrate of the surface-mounted light emitting diode according to the second embodiment.
【図１１】本発明に係る表面実装型発光ダイオードの第
３実施例を示す斜視図である。FIG. 11 is a perspective view showing a third embodiment of the surface mount light emitting diode according to the present invention.
【図１２】第３実施例に係る表面実装型発光ダイオード
の集合基板を示す製造工程図である。FIG. 12 is a manufacturing process diagram showing an aggregate substrate of the surface-mounted light emitting diode according to the third embodiment.
【図１３】従来における表面実装型発光ダイオードの一
例を示す斜視図である。FIG. 13 is a perspective view showing an example of a conventional surface mount type light emitting diode.
【図１４】上記図１３のＢ−Ｂ線断面図である。FIG. 14 is a sectional view taken along line BB of FIG. 13;
【図１５】従来における表面実装型発光ダイオードの他
の例を示す斜視図である。FIG. 15 is a perspective view showing another example of a conventional surface mount light emitting diode.
【図１６】上記図１５のＣ−Ｃ線断面図である。FIG. 16 is a sectional view taken along line CC of FIG. 15;
１０ 表面実装型発光ダイオード １１ 基板 １３ 凹部 １４ 発光ダイオード素子 １５ 底面 ２２ ボンディングワイヤ ２３ エポキシ樹脂 DESCRIPTION OF SYMBOLS 10 Surface mount type light emitting diode 11 Substrate 13 Recess 14 Light emitting diode element 15 Bottom surface 22 Bonding wire 23 Epoxy resin
Claims (6)
成し、基板上に載置した発光ダイオード素子の各電極と
前記基板上の各電極とを電気的に接続すると共に、前記
発光ダイオード素子及び前記電気的接続部分を樹脂封止
したことを特徴とする表面実装型発光ダイオード。1. A pair of electrodes are formed on a substrate made of a thin metal plate, and each electrode of a light emitting diode element mounted on the substrate is electrically connected to each electrode on the substrate. And a surface-mounted light emitting diode in which the electrical connection portion is resin-sealed.
成し、一方の電極側に発光ダイオード素子を載置するた
めの凹部を設けると共に、この凹部に載置した発光ダイ
オード素子と基板の他方の電極とをボンディングワイヤ
で接続し、発光ダイオード素子及びボンディングワイヤ
を樹脂封止したことを特徴とする表面実装型発光ダイオ
ード。2. A pair of electrodes are formed on a substrate made of a thin metal plate, a concave portion for mounting a light emitting diode element is provided on one electrode side, and the light emitting diode element mounted on the concave portion and the other of the substrate are provided. Characterized in that the light emitting diode element and the bonding wire are resin-sealed by connecting the electrodes with a bonding wire.
電極を形成し、一方の電極上に発光ダイオード素子を載
置すると共に、この発光ダイオード素子と基板の他方の
電極とをボンディングワイヤで接続し、発光ダイオード
素子及びボンディングワイヤを樹脂封止したことを特徴
とする表面実装型発光ダイオード。3. A pair of electrodes are formed on a flat substrate made of thin metal, a light emitting diode element is mounted on one of the electrodes, and the light emitting diode element is connected to the other electrode of the substrate by a bonding wire. And a light emitting diode element and a bonding wire are resin-sealed.
の熱伝導性の優れた材質であることを特徴とする請求項
１乃至３のいずれかに記載の表面実装型発光ダイオー
ド。4. The surface-mounted light emitting diode according to claim 1, wherein said thin metal is a material having a thickness of 0.5 mm or less and having excellent thermal conductivity.
設けて各単一基板毎に一対の電極を形成するスリット形
成工程と、 前記スリットを被うようにして集合基板の裏面側に耐熱
性樹脂フィルムを貼付するフィルム貼付工程と、 集合基板の各単一基板毎に、スリットで分けられた一方
の電極上に発光ダイオード素子を載置するダイボンド工
程と、 前記ダイボンドされた発光ダイオード素子と、基板の他
方の電極とをボンディングワイヤで接続するワイヤボン
ド工程と、 前記集合基板の全面に封止樹脂を充填して発光ダイオー
ド素子及びボンディングワイヤを封止する樹脂封止工程
と、 前記樹脂封止された集合基板を分割ラインに沿って各基
板毎にダイシングする分割工程とを備えたことを特徴と
する表面実装型発光ダイオードの製造方法。5. A slit forming step of forming a pair of electrodes for each single substrate by providing a slit in a collective substrate made of thin metal, and forming a heat-resistant resin on the back surface of the collective substrate so as to cover the slit. A film sticking step of sticking a film; a die bonding step of placing a light emitting diode element on one of the electrodes divided by a slit for each single substrate of the collective substrate; and the die bonded light emitting diode element and a substrate. A wire bonding step of connecting the other electrode of the assembly substrate with a bonding wire, a resin sealing step of filling the entire surface of the collective substrate with a sealing resin to seal the light emitting diode elements and the bonding wires, A dicing step of dicing the aggregated substrate along the division line for each substrate.
毎に発光ダイオード素子を載置するための凹部を形成す
る集合基板形成工程と、 前記集合基板にスリットを設けて各単一基板毎に一対の
電極を形成するスリット形成工程と、 前記スリットを被うようにして集合基板の裏面側に耐熱
性樹脂フィルムを貼付するフィルム貼付工程と、 集合基板の各単一基板毎に、凹部の底面に発光ダイオー
ド素子を載置するダイボンド工程と、 前記ダイボンドされた発光ダイオード素子と、基板の他
方の電極とをボンディングワイヤで接続するワイヤボン
ド工程と、 前記集合基板の全面に封止樹脂を充填して発光ダイオー
ド素子及びボンディングワイヤを封止する樹脂封止工程
と、 前記樹脂封止された集合基板を分割ラインに沿って各基
板毎にダイシングする分割工程とを備えたことを特徴と
する表面実装型発光ダイオードの製造方法。6. An aggregate substrate forming step of pressing a thin metal plate to form a recess for mounting a light emitting diode element on each single substrate, and providing a slit in the aggregate substrate to form each single substrate. A slit forming step of forming a pair of electrodes every time; a film attaching step of attaching a heat-resistant resin film to the back side of the collective substrate so as to cover the slit; and a concave portion for each single substrate of the collective substrate. A die bonding step of mounting a light emitting diode element on the bottom surface of the substrate, a wire bonding step of connecting the die-bonded light emitting diode element and the other electrode of the substrate with a bonding wire, and sealing resin over the entire surface of the collective substrate. A resin sealing step of filling and sealing a light emitting diode element and a bonding wire; and dicing the resin-sealed collective substrate for each substrate along a division line A method for manufacturing a surface-mounted light-emitting diode, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10222907A JP2000058924A (en) | 1998-08-06 | 1998-08-06 | Surface mounting-type light emitting diode and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10222907A JP2000058924A (en) | 1998-08-06 | 1998-08-06 | Surface mounting-type light emitting diode and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000058924A true JP2000058924A (en) | 2000-02-25 |
Family
ID=16789745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10222907A Pending JP2000058924A (en) | 1998-08-06 | 1998-08-06 | Surface mounting-type light emitting diode and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000058924A (en) |
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