JP2002064225A - Light application device and its manufacturing method, and lighting device using the light application device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light application device having proper heat radiating properties. SOLUTION: This very compact, thin, and light-weight light application device 68 with proper heat radiating properties has a plurality of conductive paths 51 which are isolated electrically, an optical semiconductor device 65 stuck onto the desired conductive path 51, and an insulating resin 67 that covers the optical semiconductor element 65 and can permeate light, for forming a lens for supporting the conductive path 51 in one piece.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light irradiation device and a method of manufacturing the same, and more particularly to a light irradiation device having good heat radiation, a method of manufacturing the same, and a lighting device using the light irradiation device.

[0002]

2. Description of the Related Art First, when it is necessary to irradiate a large amount of light, an electric lamp or the like is generally used. However, the light emitting element 2 may be mounted on the printed circuit board 1 as shown in FIG.

This light emitting element is mainly a light emitting diode (Light Emitting Diode) formed of a semiconductor.
In addition, a semiconductor laser or the like is also conceivable.

The light emitting diode 2 is provided with two leads 3 and 4, and one lead 3 has a back surface (anode electrode or cathode electrode) of the light emitting diode chip 5.
The other lead 4 is electrically connected to an electrode (cathode electrode or anode electrode) on the chip surface via a thin metal wire 6. Further, a transparent resin sealing body 7 for sealing the leads 3 and 4, the chip 5 and the fine metal wire 6 is formed also as a lens.

On the other hand, the printed circuit board 1 is provided with electrodes 8 and 9 for supplying power to the light emitting diode 2, and the leads 3 and 4 are provided in through holes provided therein.
Is inserted, and the light emitting diode 2 is fixed and mounted via solder or the like.

For example, Japanese Patent Application Laid-Open No. 9-252651 describes a light irradiation device using this light emitting diode.

[0007]

However, since the light emitting element 2 described above is a package in which the resin sealing body 7, the leads 3, 4 and the like are incorporated, there is a disadvantage that the size of the mounted substrate 1 becomes large. there were. In addition, there is a problem that the temperature rises as a whole due to poor heat radiation of the substrate itself. For this reason, there has been a problem that the temperature of the semiconductor chip itself also rises, and the driving capability decreases.

The light emitting diode chip 5 emits light also from the side surface of the chip, and there is light traveling toward the substrate 1. However, since the substrate 1 is a printed circuit board, there is also a problem that highly efficient emission of emitting all light upward cannot be performed.

[0009]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has a plurality of electrically separated conductive paths, an optical semiconductor device fixed on a desired conductive path, and an optical semiconductor device. A light radiating device having good heat dissipation, comprising: a resin that covers an element and transmits light that integrally supports the conductive path.

[0010] Further, a plurality of conductive paths electrically separated by the separation groove, an optical semiconductor element fixed on a desired conductive path, and the separation groove between the conductive path, which covers the optical semiconductor element and is located between the conductive paths. By providing a light irradiating device having a resin capable of transmitting light that is filled and exposes only the back surface of the conductive path and integrally supports the conductive path, the back surface of the conductive path can be used for connection with the outside, The hole can be dispensed with, and the above problem is solved.

A step of preparing a conductive foil and forming a conductive path by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region to be a conductive path; Fixing an optical semiconductor element on a road, covering the optical semiconductor element, and molding the optical semiconductor element with a resin that can transmit light so as to fill the separation groove; and Providing a method of manufacturing a light irradiation device including a step of removing a conductive foil, the conductive foil forming a conductive path is a starting material, and the conductive foil is formed until a resin capable of transmitting light is molded. Has a supporting function, and the resin capable of transmitting light after the molding has the supporting function, so that the supporting substrate can be eliminated, thereby solving the above-mentioned problem.

A step of preparing a conductive foil and forming a conductive path by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region serving as the conductive path; A step of fixing a plurality of optical semiconductor elements on a path, a step of forming connection means for electrically connecting an electrode of the optical semiconductor element and a desired conductive path, and covering the plurality of optical semiconductor elements; A step of molding with a resin capable of transmitting light so as to be filled in the separation groove, a step of removing the conductive foil in a thickness portion where the separation groove is not provided, and cutting the resin capable of transmitting light By providing a method of manufacturing a light irradiating device including the step of separating the light irradiating device into individual light irradiating devices, a large number of light irradiating devices can be mass-produced, thereby solving the above problem.

Further, by forming a corrosion-resistant conductive film on at least a region serving as a conductive path on the conductive foil surface,
When a separation groove is formed in the conductive foil, the conductive film remains on the upper surface of the conductive foil in an eaves shape. For this reason, the adhesion between the conductive foil and the resin when each of the light irradiation devices is covered with the resin capable of transmitting light is improved.

When the conductive foil is bent so as to surround at least a region of the conductive foil to which the optical semiconductor element is fixed, the conductive foil is bent so as to have an inclination angle capable of reflecting light of the optical semiconductor element upward. Thereby, the irradiation efficiency is improved.

Furthermore, by bending the conductive foil in a state where the conductive film is formed on the conductive path, the conductive film becomes glossy and the irradiation efficiency can be further improved.

[0016] After covering each of the light irradiation devices with a resin that can transmit light so that the separation grooves are filled, the conductive foil on the side where the separation grooves are not provided is removed,
Exposing the resin, and separating each light irradiation device coated with the light-permeable resin, each light irradiation device is not separated until the final stage, therefore, The foil can be provided in each step as one sheet, and the workability is good.

Further, since the light-permeable resin is attached by transfer molding using a mold, workability is good and an appropriate shape can be formed. In particular, it is suitable for forming a lens shape.

In the case where individual light irradiation devices sealed with a resin capable of transmitting light are separated by a press,
Deburring of the end of the light irradiation device becomes unnecessary, and productivity can be improved.

More specifically, when the material of the conductive film is inferior in adhesion when the light irradiating device is covered with a resin capable of transmitting light as compared to the material of the conductive foil, By forming the conductive film to be formed in a range narrower than the region that becomes the conductive path, the area of the conductive foil that is not covered with the conductive film becomes wider, and the light irradiation device is coated with a resin that can transmit light. This improves the adhesion between the conductive foil and the resin.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of a light irradiation device and a method of manufacturing the same according to the present invention will be described below with reference to the drawings.

In FIG. 1, reference numeral 61 denotes a sheet-like conductive foil.
The material is selected in consideration of the adhesiveness, bonding property, and plating property of the brazing material. As the material, a conductive foil mainly containing Cu (copper), a conductive foil mainly containing Al (aluminum), or Fe -Ni (iron-nickel), Cu-A
For example, a conductive foil made of an alloy such as l (copper-aluminum) or Al-Cu-Al (aluminum-copper-aluminum) is employed.

The thickness of the conductive foil is preferably about 10 μm to 300 μm in consideration of the later etching.
A 00 μm copper foil was used. However, it is basically good to be 300 μm or more and 10 μm or less. As described below,
It is sufficient that the separation groove 64 shallower than the thickness of the conductive foil 61 can be formed.

The sheet-shaped conductive foil 61 is prepared by being wound into a roll with a predetermined width, and may be conveyed to each step described later, or the conductive foil cut into a predetermined size may be used. It may be prepared and transported to each step described later.

Then, plating is performed on predetermined regions on the front and back surfaces of the conductive foil 61, respectively. In the present embodiment, a film made of Ag (silver) (hereinafter, referred to as an Ag film 62) is formed as the conductive film 62. However, the present invention is not limited to this. Au (gold), Ni, Al, Pd (palladium), or the like. Moreover, these corrosion-resistant conductive films have a feature that they can be used as they are as die pads and bonding pads. Furthermore, the Ag coating 62 may be formed only on the surface of the conductive foil 61.

For example, the Ag coating 62 adheres to Au and also adheres to the brazing material. Therefore, Au
If the coating is covered, the Ag on the conductive path 51 is left as it is.
The chip can be thermocompression-bonded to the coating 62, and the chip can be fixed via a brazing material such as solder. Furthermore, since the Au thin wire can be bonded to the Ag conductive film, wire bonding is also possible.

Next, in FIG. 2, a press process is performed on the plated conductive foil 61 to make a predetermined region of the conductive foil 61 project upward. In addition, this convex portion 63
The optical semiconductor element 65 described later is mounted on the optical semiconductor element disposition portion having a cup-shaped cross section formed by the above method. The optical semiconductor element 65 is formed by the slope formed by the projection 63.
Is reflected upward, and the irradiation efficiency is improved. More specifically, after covering the conductive foil 61 with the Ag coating 62, the conductive foil 61 is pressed so that the pressed and bent region (the head of the protruding portion 63) is larger than the other regions. There is an advantage that gloss is increased and the reflection efficiency of light from an optical semiconductor element described later is improved. Of course, the conductive film may be formed after pressing, and more specifically, the optical semiconductor element may be formed on a non-pressed conductive foil.

As described above, even if the conductive foil 61 (and the Ag coating 62) is simply pressed by a press or the like in a state where the Ag coating 62 is formed without bending the conductive foil 61, the Ag coating is formed. The luster appears at 62 and the irradiation efficiency can be improved.

Subsequently, in FIG. 3, by subjecting the surface of the conductive foil 61 to a half-etching process using the Ag film 62 as a mask, a non-plated region is half-etched to form an isolation groove 64. Is done. still,
The depth of the separation groove 64 formed by this etching is:
For example, the thickness is 50 μm, and the side surface is roughened, so that the adhesiveness to the light-permeable insulating resin 67 described later is improved. It should be noted that a resist film may be formed on the Ag film 62 and subjected to a half-etching process using the resist film as a mask. Furthermore, after half etching,
An Ag coating 62 may be formed.

The sectional shape of the side wall of the separation groove 64 has a different structure depending on the removing method. This removal process can employ wet etching, dry etching, laser evaporation, dicing, and the like.

For example, in the case of wet etching, ferric chloride or cupric chloride is mainly used as an etchant, and the conductive foil 61 is dipped in this etchant or showered with this etchant. . Here, since the wet etching is generally performed non-anisotropically, the side surface has a curved structure. At this time, the conductive film 62 applied to the conductive foil 61
Since the optical semiconductor element 65 is disposed on the eaves, the adhesiveness when the optical semiconductor element 65 is covered with an insulating resin 67 capable of transmitting light, which will be described later, is improved. In the present embodiment, a wet etching process is performed.

Further, in the case of dry etching, anisotropic and non-anisotropic etching is possible. At present, C
It is said that it is impossible to remove u by reactive ion etching, but it can be removed by sputtering. Also,
Depending on the sputtering conditions, etching can be performed anisotropically or non-anisotropically.

In the case of a laser, a separation groove can be formed by directly irradiating a laser beam. In this case, the side surface of the separation groove 64 is rather straight.

Further, in dicing, it is impossible to form a bent complicated pattern, but it is possible to form a lattice-shaped separation groove.

In the step shown in FIG. 3, a photoresist film may be selectively coated instead of the conductive film, and the conductive foil 61 may be half-etched using the resist film as a mask.

Subsequently, in FIG. 4, the optical semiconductor element 65 is electrically connected to the conductive foil 61 in which the separation groove 64 is formed and mounted. Here, a light emitting diode is used as the optical semiconductor element 65, and the optical semiconductor element 65 is die-bonded on a first conductive electrode 51A described later, and the surface of the optical semiconductor element 65 and the second conductive electrode 51B are connected. Wire bonding is performed by the thin metal wires 66 (see FIG. 6).

Next, in FIG. 5, the optical semiconductor element 65 on the conductive foil 61 is sealed and covered with an insulating resin 67 capable of transmitting light transmitted from the optical semiconductor element 65. I do. In this step, the optical semiconductor element 65 is transferred by transfer molding using a mold (not shown).
The surface of the conductive foil 61 including the separation groove 64 is sealed with a thermosetting silicone resin or epoxy resin. As described above, the resin needs to be capable of transmitting light,
What is called a transparent resin, or an opaque resin that can transmit light of a predetermined wavelength is used.

Here, the insulating resin 67 capable of transmitting the light is used.
Has an upwardly convex lens shape in order to collect as much light as possible from the optical semiconductor element 65 and emit it upward. Therefore, when viewed from above, it has a substantially circular shape as shown in FIG. In addition, the thickness of the insulating resin 67 (lens) capable of transmitting light, which is coated on the surface of the conductive foil 61, can be increased or decreased in consideration of strength.

The feature of this step is that the conductive foil 61 serves as a supporting substrate until the insulating resin 67 capable of transmitting light serving as a lens is covered. Further, the heat dissipation is better than that of the conventional configuration (see FIG. 19) in which the light emitting element 2 is mounted on the printed circuit board 1, so that the driving capability can be improved.

Furthermore, in the present invention, since the conductive foil 61 serving as a support substrate is a material necessary as an electrode material, it has an advantage that the constituent materials can be reduced as much as possible, and a reduction in cost can be realized.

Since the separation groove 64 is formed to be shallower than the thickness of the conductive foil 61, the conductive foil 61 is not individually separated as the conductive path 51. Therefore, when molding the insulating resin 67 that can be handled integrally as the sheet-shaped conductive foil 61 and allows light to pass therethrough, there is an advantage that the work of transporting to the mold and mounting on the mold becomes very simple.

When the optical semiconductor element 65 is sealed with a resin,
Instead of using a mold, a potting resin may be applied from above the optical semiconductor element 65 to form a lens shape.

In this case, however, there is a problem that the silicone resin and the epoxy resin cannot be stably formed into a hemispherical shape which is preferable as a lens because both have low viscosity upon heat curing. According to the lens forming method, there is an advantage that a stable lens shape can be formed. Note that for a configuration that does not require a lens shape, the thickness of the insulating resin 67 may be relatively thin, and may not be a transfer mold using a mold.

Subsequently, there is a step of chemically and / or physically removing the back surface of the conductive foil 61 in FIG. Here, this removing step is performed by polishing, grinding, etching, laser metal evaporation, or the like.

In this embodiment, the conductive foil 61 is formed by using the Ag film 62 applied on the back surface of the conductive foil 61 as a mask.
Is wet-etched to cut the conductive foil 61 below the separation groove 64 to expose the insulating resin 67 that can transmit light, thereby separating the conductive paths 51. Thus, the surface of the conductive paths 51A and 51B (the first conductive electrode and the second conductive electrode) is exposed from the insulating resin 67 that can transmit light.

The back surface of the conductive foil 61 may be ground by about 50 to 60 μm using a polishing device or a grinding device to expose the insulating resin 67 that can transmit light from the separation groove 64. In this case, about 40 μm The conductive paths 51 having a thickness are separated. Further, the entire surface of the conductive foil 61 may be wet-etched before the light-transmitting insulating resin 67 is exposed, and then the entire surface may be shaved by a polishing or grinding device to expose the light-transmitting insulating resin 67. . In this case, the conductive path 51 is embedded in the insulating resin 67 capable of transmitting light, and the back surface of the insulating resin 67 capable of transmitting light is connected to the conductive path 51.
A flat light irradiation device whose back surfaces coincide with each other can be realized.

More specifically, when the back surface of the conductive foil 61 is shaved by the above-described polishing device or grinding device and the conductive paths 51 are separated, the exposed conductive paths 51
May be coated with a conductive material such as solder, and the conductive path 51 may be subjected to an oxidation preventing treatment.

Finally, there is a step of separating adjacent light irradiation devices individually to complete the light irradiation device.

This separation step can be realized by dicing, cutting, chocolate break and the like. Here, when the chocolate break is adopted, the copper pieces 69 are peeled off from both ends of the insulating resin 67 capable of transmitting light covering the light irradiation device 68 by a press machine shown by a dashed line in FIG. The irradiation device 68 is separated. In this case, deburring of the back surface is not required as compared with dicing, cutting, and the like, so that there is an advantage that workability is good.

The feature of the present manufacturing method is that the conductive path 51 can be separated using the insulating resin 67 that can transmit light as a supporting substrate. The insulating resin 67 that can transmit light is
This is a necessary material as a material for embedding the conductive path 51, and does not require a substrate dedicated to support during the manufacturing process. Therefore, it has a feature that it can be manufactured with a minimum amount of material and that cost reduction can be realized.

The thickness of the resin capable of transmitting light from the surface of the conductive path 51 can be adjusted at the time of attaching the resin capable of transmitting light in the previous step. Therefore, the thickness of the light irradiating device 68 has a characteristic that it can be thick or thin, though it depends on the optical semiconductor element to be mounted. Here, a light irradiation device in which a 40 μm conductive path 51 and an optical semiconductor element are embedded in an insulating resin 67 that can transmit light having a thickness of 400 μm (see FIGS. 7 and 8).

Here, FIG. 9 shows an illuminating device in which the above-mentioned light irradiating devices 68 (light emitting diodes) are connected in series between the electrodes 30 and 31 so that the current value passing through the light irradiating devices 68 is constant. 40 is shown.

Ten electrodes are formed between the electrodes 30 and 31. The back surface of the chip serving as the cathode electrode (or anode electrode) of the light irradiation device 68 is fixed to the electrode 32, and the anode electrode (or cathode electrode) is fixed. The electrode 30 and the electrode 30 are connected by a thin metal wire 66. Further, the back surface of the chip of the second light irradiation device 68 is fixed to the electrode 33, and the electrode on the chip surface and the electrode 32 are connected by a thin metal wire 66. That is, the electrode to which the chip back surface serving as the cathode electrode (or the anode electrode) is fixed is connected to the thin metal wire extending from the anode electrode (or the cathode electrode) of the next light irradiation device 68. By repeating this connection form, a series connection is realized. The light irradiation device 68 is, for example, XY
It is arranged at a predetermined position of the electrode by a robot or the like having an arm movable in −Z (X direction−Y direction−up / down direction).

Further, in order to use the electrode made of copper foil as a reflection plate, the surface is coated with Ni. Further, in order to make the whole area of the substrate substantially a reflection plate, 12 electrodes from the right electrode 30 to the left electrode 31 are formed. It is patterned so as to be substantially completely covered by the individual electrodes.

According to the illumination device 40, the light irradiation device 6
The heat generated from 8 is radiated through the metal substrate 11, and has an advantage that the driving current of the light irradiation device 68 can be increased.

Although not shown in the drawings, a lighting device 40 having good heat dissipation can be realized similarly by connecting the light irradiating devices 68 in parallel or by combining the parallel connection and the series connection. . (Second Embodiment) Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.

Here, the difference between the features of the first embodiment and the features of the second embodiment will be described. In the first embodiment, as shown in FIG.
When forming the separation groove 64 by half etching 1
Etching is performed so that the opening diameter of the upper part of the separation groove 64 is larger than the opening diameter of the conductive film 62, so that the conductive film 62 remains over the separation groove 64 in an eaves shape. The eaves are used to improve the adhesion between the conductive foil 61 and the insulating resin 67.

On the other hand, in the second embodiment, FIG.
1 and the like, a conductive film 1 formed on the conductive foil 161
The formation region of the conductive foil 161 and the insulating resin 167 are formed by limiting the formation region of the conductive foil 161 to a region as narrow as possible (a narrower range as compared with the first embodiment) and increasing the exposed portion of the conductive foil 161.
It is intended to improve the adhesion to the substrate. That is, for example, when the conductive foil 161 is made of Cu and the conductive film 162 is made of Ag, the adhesion of the conductive film 162 to the insulating resin 167 is inferior to that of Cu. The region is made as narrow as possible, the exposed portion of the conductive foil 161 having relatively good adhesion to the insulating resin 167 is increased, and the adhesion to the insulating resin 167 is improved.

Hereinafter, a second embodiment will be described. The configuration other than that the region where the conductive film 162 is formed is narrowed is as follows.
The description is simplified by using the same reference numerals as those used in the first embodiment plus 100 to avoid duplicating the description, which is the same as that of the first embodiment.

In FIG. 10, reference numeral 161 denotes a sheet-shaped conductive foil, the material of which is selected in consideration of the adhesion of the brazing material, the bonding property, and the plating property. Conductive foil or F made mainly of Al
A conductive foil or the like made of an alloy such as e-Ni, Cu-Al, or Al-Cu-Al is employed.

The thickness of the conductive foil is preferably about 10 μm to 300 μm in consideration of the later etching.
A 00 μm copper foil was used. However, it is basically good to be 300 μm or more and 10 μm or less. As described below,
It is sufficient that the separation groove 164 shallower than the thickness of the conductive foil 161 can be formed.

The sheet-shaped conductive foil 161 is prepared by being wound into a roll with a predetermined width, and may be conveyed to each step described later, or the conductive foil cut into a predetermined size may be used. It may be prepared and transported to each step described later.

Then, by performing a half-etching process using the photoresist film 160 formed on the conductive foil 161 as a mask, a predetermined region of the conductive foil 161 is half-etched to form a separation groove 164. The depth of the separation groove 164 formed by this etching is
For example, the thickness is 50 μm, and the side surface is rough, so that the adhesiveness to an insulating resin 167 that can transmit light, which will be described later, is improved.

It is also possible to form an Ag film 162 described later on the conductive foil 161 and then half-etch using a photoresist film formed so as to completely cover the Ag film 162 as a mask. .

The sectional shape of the side wall of the separation groove 164 has a different structure depending on the removing method. This removal process can employ wet etching, dry etching, laser evaporation, dicing, and the like.

For example, in the case of wet etching, ferric chloride or cupric chloride is mainly used as an etchant, and the conductive foil 161 is dipped in the etchant or showered with the etchant. . Here, since the wet etching is generally performed non-anisotropically, the side surface has a curved structure.

In the case of dry etching, etching can be performed anisotropically or non-anisotropically. At present, C
It is said that it is impossible to remove u by reactive ion etching, but it can be removed by sputtering. Also,
Depending on the sputtering conditions, etching can be performed anisotropically or non-anisotropically.

In the case of a laser, a separation groove can be formed by directly irradiating a laser beam. In this case, the side surface of the separation groove 164 is rather straight.

Further, in dicing, it is impossible to form a bent complicated pattern, but it is possible to form a lattice-shaped separation groove.

Next, referring to FIG.
A plating process is performed on predetermined regions on the front surface and the rear surface, respectively. In this embodiment, a coating made of Ag (hereinafter, referred to as an Ag coating 162) is formed as the conductive coating 162, but the present invention is not limited to this, and other materials such as Au, Ni , Al or Pd. Moreover, these corrosion-resistant conductive films are used for die pads,
It has the feature that it can be used as it is as a bonding pad. Furthermore, the Ag coating 162 may be formed only on the surface of the conductive foil 161.

For example, the Ag coating 162 adheres to Au and also adheres to the brazing material. Therefore, A
If the u film is covered, the A
The chip can be thermocompression-bonded to the g coating 162, and the chip can be fixed via a brazing material such as solder. Furthermore, since the Au thin wire can be bonded to the Ag conductive film, wire bonding is also possible.

The formation region of the Ag film 162 formed on the conductive foil 161 which is a feature of the second embodiment is as follows.
The area is smaller than the area where the Ag film 62 is formed in the first embodiment. That is, in the second embodiment, at least only the upper surface portion of the optical semiconductor element disposing portion having a cup-shaped cross section formed by the convex portion 163 formed by pressing the conductive foil 161 as described later,
5 and the extent to which a reflecting surface can be ensured so that the light irradiated from the convex portion 163 is reflected by the inclined portion formed by the convex portion 163; It is sufficient that the electrode 151B) has an area large enough to secure it.

Thus, when the conductive foil 161 on which the optical semiconductor element 165 is mounted is resin-sealed using the insulating resin 167, the conductive foil 161 and the insulating resin 167 are in contact with each other as compared with the first embodiment. Since the area is increased, the conductive foil 1
The adhesion between the insulating resin 61 and the insulating resin 167 is improved (see FIGS. 12 to 14).

Next, in FIG. 12, the plated conductive foil 161 is subjected to a press process to make a predetermined region of the conductive foil 161 project upward. An optical semiconductor element 165 described later is mounted on the optical semiconductor element arrangement portion having a cup-shaped cross section formed by the convex portion 163. Then, the light from the optical semiconductor element 165 is reflected upward by the inclined portion formed by the convex portion 163, and the irradiation efficiency is improved. More specifically, the Ag foil 162 forms the conductive foil 161.
After covering, the conductive foil 161 is subjected to a press treatment, so that the pressed and bent region (the head of the convex portion 163) becomes glossier than the other regions, and the region from the optical semiconductor element to be described later is removed. There is an advantage that the light reflection efficiency is improved. Of course, the conductive film may be formed after pressing, and more specifically, the optical semiconductor element may be formed on a non-pressed conductive foil.

As described above, even if the conductive foil 161 (and the Ag film 162) is simply pressed by a press or the like with the Ag film 162 formed without bending the conductive foil 161 as described above, 162 is glossy and the irradiation efficiency can be improved.

Subsequently, in FIG. 13, the optical semiconductor element 165 is electrically connected to the conductive foil 161 on which the separation groove 164 is formed, and mounted. Here, a light emitting diode is used as the optical semiconductor element 165, and the optical semiconductor element 165 is used.
Is die-bonded onto a first conductive electrode 151A, which will be described later, and the surface of the optical semiconductor element 165 and the second conductive electrode 151B are wire-bonded with a thin metal wire 166 (see FIG. 15).

Next, referring to FIG.
The upper optical semiconductor element 165 is sealed and covered with an insulating resin 167 that can transmit light transmitted from the optical semiconductor element 165. In this step, the conductive foil 161 including the optical semiconductor element 165 and the separation groove 164 is sealed with a thermosetting silicone resin or epoxy resin by transfer molding using a mold (not shown). As described above, the resin must be capable of transmitting light, and a so-called transparent resin or a resin that is opaque but can transmit light of a predetermined wavelength is used.

Here, the insulating resin 16 capable of transmitting the light is used.
Numeral 7 has an upwardly convex lens shape in order to collect as much light as possible from the optical semiconductor element 165 and emit the light upward. Therefore, when viewed from above, it has a substantially circular shape as shown in FIG. In addition, the thickness of the insulating resin 167 (lens) capable of transmitting light which is coated on the surface of the conductive foil 161 can be increased or decreased in consideration of strength.

The feature of this step is that the conductive foil 161 functions as a supporting substrate until the insulating resin 167 which can transmit light to be a lens is covered. Further, the heat dissipation is better than that of the conventional configuration (see FIG. 19) in which the light emitting element 2 is mounted on the printed circuit board 1, so that the driving capability can be improved.

Further, in the present invention, since the conductive foil 161 serving as the support substrate is a material necessary as an electrode material,
There is an advantage that the operation can be performed while omitting the constituent materials as much as possible, and the cost can be reduced.

Further, the separation groove 164 is formed in the conductive foil 161.
The conductive foils 161 are not individually separated as conductive paths 151 because they are formed shallower than the thickness of the conductive foil 161. Therefore,
When molding the insulating resin 167 that can be handled integrally as a sheet-shaped conductive foil 161 and allows light to pass therethrough, there is an advantage that the work of transporting to the mold and mounting on the mold becomes very simple.

When the optical semiconductor element 165 is sealed with a resin, instead of using a mold, a potting resin may be applied from above the optical semiconductor element 65 to form a lens.

In this case, however, the silicone resin and the epoxy resin both have low viscosities at the time of heating and curing, and thus have a problem that they cannot be stably formed into a hemispherical shape which is preferable as a lens. According to the lens forming method, there is an advantage that a stable lens shape can be formed. Note that, for a configuration that does not need to be formed into a lens shape, the thickness of the insulating resin 167 may be relatively thin, and may not be a transfer mold using a mold.

Subsequently, there is a step of chemically and / or physically removing the back surface of the conductive foil 161 in FIG. Here, this removing step is performed by polishing, grinding, etching, laser metal evaporation, or the like.

In this embodiment, the conductive foil 161 is wet-etched using a photoresist film (not shown) formed on the conductive foil 161 and the Ag coating 162 on the back side as a mask, and the conductive film 161 under the separation groove 164 is etched. Each of the conductive paths 1 is cut by shaving the foil 161 to expose the insulating resin 167 that can transmit light.
51 is separated. Accordingly, the structure is such that the surfaces of the conductive paths 151A and 151B (the first conductive electrode and the second conductive electrode) are exposed from the insulating resin 167 that can transmit light.

The back surface of the conductive foil 161 is shaved by about 50 to 60 μm by a polishing device or a grinding device, and
The insulating resin 167 capable of transmitting light may be exposed from the light emitting element 4, and in this case, the conductive path 151 having a thickness of about 40 μm is separated. Further, an insulating resin 167 capable of transmitting light is provided.
The entire surface of the conductive foil 161 may be wet-etched until the surface is exposed, and thereafter, the entire surface may be shaved by a polishing or grinding device to expose the light-permeable insulating resin 167. In this case, the conductive path 151 is embedded in the light-permeable insulating resin 167, and the light-permeable insulating resin 16
7, a flat light irradiation device in which the back surface of the conductive path 151 coincides with the back surface of the conductive path 151 can be realized.

More specifically, the back surface of the conductive foil 161 is shaved by the above-described polishing device or grinding device and the like, and each conductive path 15
When the conductive paths 151 are separated from each other, a conductive material such as solder is applied to the exposed conductive paths 151 as necessary.
May be subjected to antioxidation treatment.

Finally, there is a step of separating adjacent light irradiation devices individually to complete the light irradiation device.

This separation step can be realized by dicing, cutting, chocolate break, or the like. Here, when the chocolate break is adopted, the copper pieces 169 are peeled off from both ends of the insulating resin 167 capable of transmitting light covering the light irradiation device 168 by a press machine indicated by a dashed line in FIG. The irradiation device 168 is separated. In this case, deburring of the back surface is not required as compared with dicing, cutting, and the like, so that there is an advantage that workability is good.

The feature of this manufacturing method is that the conductive path 151 can be separated using the insulating resin 167 that can transmit light as a supporting substrate. Insulating resin 16 capable of transmitting light
Reference numeral 7 denotes a material necessary as a material for embedding the conductive path 151, and does not require a substrate dedicated to support during the manufacturing process. Therefore, it has a feature that it can be manufactured with a minimum amount of material and that cost reduction can be realized.

The thickness of the resin capable of transmitting light from the surface of the conductive path 151 can be adjusted when the resin capable of transmitting light in the previous step is attached. Therefore, the thickness of the light irradiation device 168 can be either thick or thin, although it depends on the optical semiconductor element to be mounted. Here, a 40 μm conductive path 1 is placed in an insulating resin 167 capable of transmitting light having a thickness of 400 μm.
This results in a light irradiation device in which the optical semiconductor element 51 and the optical semiconductor element are embedded (see FIGS. 16 and 17).

FIG. 18 shows the electrode 130 and the electrode 131.
The light irradiating device 168 (light emitting diode) is connected in series between the light irradiating device 168 and the light irradiating device 168.

Between the electrodes 130 and 131,
Ten electrodes are formed, and the light irradiation device 16 is
The rear surface of the chip serving as the cathode electrode (or the anode electrode) of No. 8 is fixed, and the anode electrode (or the cathode electrode) and the electrode 130 are connected by the thin metal wire 166. Further, the back surface of the chip of the second light irradiation device 168 is fixed to the electrode 133, and the electrode on the chip surface and the electrode 132 are connected to the thin metal wire 166.
Connected with. That is, the electrode to which the chip back surface serving as the cathode electrode (or the anode electrode) is fixed is the anode electrode (or the cathode electrode) of the next light irradiation device 168.
Connected to a thin metal wire extending from the By repeating this connection mode, a series connection is realized.

Further, in order to use the electrode made of copper foil as a reflector, the surface is coated with Ni. Further, in order to make the entire substrate substantially a reflector, the right electrode 130 to the left electrode 131 are used.
Are patterned so as to be substantially completely covered by the twelve electrodes. The light irradiation device 168 includes, for example, X-
It is arranged at a predetermined position of the electrode by a robot having an arm movable in YZ (X direction-Y direction-up and down direction).

According to this structure, the heat generated from the light irradiation device 168 is radiated through the metal substrate 111, and has an advantage that the driving current of the light irradiation device 168 can be increased.

Although not shown in the drawings, a lighting device 140 having good heat radiation can be realized similarly by connecting the light irradiation devices 168 in parallel or by connecting the parallel connection and the series connection in combination. .

The conductive foils 61 and 161 and the insulating resin 6
As means for improving the adhesion with the conductive foils 61 and 167, the conductive foils 61 and 162 can be formed without forming the conductive coatings 62 and 162.
161 is oxidized and copper oxide (CuO or CuO
₂ O), the conductive foils 61 and 161 and the insulating resin 6
7,167 can be improved.

Further, as a result of the analysis by the present inventors, the surface state of the conductive foils 61 and 161 is higher than that of the CuO state by C
It has been found that the u ₂ O state, that is, the lower the oxidation rate, the better the adhesion.

[0098]

As is apparent from the above description, according to the present invention, light irradiation which is composed of optical semiconductor elements, conductive paths (conductive electrodes) and a resin capable of transmitting light is required at a minimum, and wastes resources. Device. Therefore, it is possible to realize a light irradiation device that has no extra components until completion and can greatly reduce the cost. In addition, by setting the coating thickness of the resin capable of transmitting light and the thickness of the conductive foil to optimal values, it is possible to realize a very small, thin, and lightweight light irradiation device.

Further, since only the back surface of the conductive path is exposed from the resin that can transmit light, the back surface of the conductive path can be immediately used for connection to the outside, and the back electrode and the through hole of the conventional structure are unnecessary. It has the advantage that can be. In addition, heat dissipation can be improved as compared with a conventional configuration in which an optical semiconductor element is mounted on a printed board, and the driving capability of the optical semiconductor element can be improved.

Also, by forming a conductive film on at least a region to be a conductive path on the surface of the conductive foil, when a separation groove is formed in the conductive foil, the conductive film is overhanged on the upper surface of the conductive foil. Therefore, when the light irradiation device is covered with a resin that can transmit light, the adhesion between the conductive foil and the resin that can transmit light is improved.

Further, when the conductive foil is bent so as to surround at least a region of the conductive foil to which the optical semiconductor element is fixed, the conductive foil is bent so as to have an inclination angle capable of reflecting light of the optical semiconductor element upward. Thereby, the irradiation efficiency is improved.

Further, by bending the conductive foil with a press or the like in a state where the conductive film is formed on the conductive path, the conductive film becomes glossy and the irradiation efficiency can be further improved.

After covering each of the light irradiation devices with a resin which can transmit light so as to fill the separation grooves, the conductive foil on the side where the separation grooves are not provided is removed to a predetermined position. And a step of separating each light irradiation device coated with the resin capable of transmitting the light,
The light irradiation devices are not separated from each other until the final stage. Therefore, the conductive foil can be provided as a single sheet to each step, and the workability is good.

Further, since the resin capable of transmitting light is attached by transfer molding using a mold, workability is good and an appropriate shape can be formed. Particularly, it is suitable for forming a lens shape.

In the case where the individual light irradiation devices sealed with a resin capable of transmitting light are separated by a press,
Deburring of the end of the light irradiation device is not required, and productivity is improved.

More specifically, a conductive film is formed only on at least a limited area of the conductive foil surface, which is a conductive path area, and the range of the conductive foil covered with the conductive film is narrowed. When the light irradiation device is covered with a resin that can transmit light, the adhesion between the conductive foil and the resin that can transmit light is improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a method for manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a method for manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating the method of manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 5 is a cross-sectional view for explaining the method for manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 6 is a cross-sectional view for explaining the method for manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 7 is a cross-sectional view for explaining the method for manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 8 is a plan view illustrating a light irradiation device according to the first embodiment of the present invention.

FIG. 9 is a plan view illustrating an illumination device using the light irradiation device according to the first embodiment of the present invention.

FIG. 10 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to a second embodiment of the present invention.

FIG. 11 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to a second embodiment of the present invention.

FIG. 12 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.

FIG. 13 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.

FIG. 14 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.

FIG. 15 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.

FIG. 16 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.

FIG. 17 is a plan view illustrating a light irradiation device according to a second embodiment of the present invention.

FIG. 18 is a plan view illustrating an illumination device using a light irradiation device according to a second embodiment of the present invention.

FIG. 19 is a diagram illustrating a conventional light irradiation device.

[Explanation of symbols]

 Reference Signs List 40 lighting device 51 conductive path (electrode) 61 conductive foil 62 conductive film 63 convex portion (inclined portion) 64 separation groove 65 optical semiconductor element 66 thin metal wire 67 resin capable of transmitting light 68 light irradiation device 140 lighting device 151 conductive path ( Electrode) 161 Conductive foil 162 Conductive coating 163 Convex portion (inclined portion) 164 Separation groove 165 Optical semiconductor element 166 Fine metal wire 167 Resin capable of transmitting light 168 Light irradiation device

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Junji Sakamoto 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Shigeaki Mashimo 2-5-2 Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd. (72) Katsumi Okawa 2-5-5 Keihanhondori 2-chome, Moriguchi-shi, Osaka Prefecture (72) Inventor Eiji Hisashi Maehara 2 Keihanhondori, Moriguchi-shi, Osaka 5-5-5 Sanyo Electric Co., Ltd. (72) Inventor Koji Takahashi 29, Kitacho, Isesaki-shi, Gunma F-term in Kanto Sanyo Electronics Co., Ltd. 5F041 AA03 AA33 AA42 AA47 DA02 DA03 DA33 DA35 DA36 DA39 DA43 DA55 DA57 DA92 DC26 FF11

Claims (33)

[Claims] 1. A plurality of electrically separated conductive paths, an optical semiconductor element fixed on a desired conductive path, and light capable of covering the optical semiconductor element and integrally supporting the conductive path. A light irradiating device comprising: 2. The light irradiation device according to claim 1, wherein the plurality of conductive paths are electrically separated by a separation groove, and the separation groove is filled with the resin. 3. The light irradiation device according to claim 2, wherein the surfaces of the plurality of conductive paths are covered with the resin, and the back surfaces thereof are exposed. 4. The light irradiation apparatus according to claim 1, further comprising a connection means for connecting an electrode of said optical semiconductor element to another conductive path. 5. The light irradiation apparatus according to claim 1, further comprising a conductive film formed on the upper surface of the conductive path and made of a metal material different from that of the conductive path. 6. The light irradiation device according to claim 5, wherein the conductive coating is formed at least up to the inside of the opening of the separation groove. 7. The light irradiation device according to claim 5, wherein the conductive film is formed outside an opening of the separation groove. 8. The light irradiation device according to claim 1, wherein the conductive path is made of a conductive foil of any of copper, aluminum, iron-nickel, copper-aluminum, and aluminum-copper-aluminum. apparatus. 9. The light irradiation apparatus according to claim 5, wherein the conductive film is formed of a plating film made of nickel, gold, palladium, aluminum, silver, or the like. 10. The light irradiation apparatus according to claim 4, wherein said connection means is formed of a bonding thin wire. 11. The light irradiation device according to claim 1, wherein the conductive path is used as an electrode, a bonding pad, or a die pad area. 12. A bent portion having an inclination for reflecting light of the optical semiconductor element upward around a region of the conductive path on which the conductive film is formed and to which the optical semiconductor element is fixed. The light irradiation device according to claim 1, wherein: 13. A plurality of light irradiation devices according to claim 1,
A lighting device provided on a metal substrate. 14. A step of forming a plurality of conductive paths by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region serving as a conductive path; Fixing the semiconductor element, covering each of the optical semiconductor elements with a light-permeable resin so as to fill the separation groove, and removing the conductive foil on the side where the separation groove is not provided And a step of exposing the resin. 15. The method of manufacturing a light irradiation apparatus according to claim 14, further comprising a step of forming a conductive film on a predetermined region on the conductive path before the step of fixing the optical semiconductor element. Method. 16. The method according to claim 1, further comprising, before the step of coating the resin, a step of forming connection means for electrically connecting an electrode of the desired optical semiconductor element and the conductive path. Item 15. A method for manufacturing a light irradiation device according to Item 14. 17. The method according to claim 15, further comprising, after the step of forming the conductive film, a step of bending the conductive foil so as to surround at least a region of the conductive foil to which the optical semiconductor element is fixed. The manufacturing method of the light irradiation apparatus of Claim. 18. The method according to claim 18, further comprising, before the step of coating the optical semiconductor element with a resin, a step of forming connection means for electrically connecting an electrode of the desired optical semiconductor element and the conductive path. The method for manufacturing a light irradiation device according to claim 17, wherein: 19. The method according to claim 14, further comprising a step of separating the plurality of optical semiconductor elements covered with the light-permeable resin. 20. The method according to claim 15, further comprising a step of separating the plurality of optical semiconductor elements coated with the light-permeable resin. 21. The method according to claim 16, further comprising a step of separating the plurality of optical semiconductor elements coated with the light-permeable resin. 22. The method according to claim 17, further comprising a step of separating the plurality of optical semiconductor elements covered with the light-permeable resin. 23. The method according to claim 18, further comprising a step of separating the plurality of optical semiconductor elements covered with the light-permeable resin. 24. The optical semiconductor device, wherein a cathode electrode or an anode electrode on a back surface is electrically connected to the first conductive electrode formed of the conductive path, and the first conductive electrode formed of the conductive path is connected to the second conductive electrode also formed of the conductive path. The anode electrode or the cathode electrode is electrically connected.
3. The method for manufacturing a light irradiation device according to claim 1. 25. The method according to claim 17, wherein in the step of bending the conductive foil, the conductive foil is bent so as to have an inclination angle capable of reflecting light of the optical semiconductor element upward. . 26. The conductive foil is made of copper, aluminum or iron.
The method for manufacturing a light irradiation device according to claim 14, wherein the light irradiation device is made of any one of nickel, copper-aluminum, and aluminum-copper-aluminum. 27. The method according to claim 15, wherein the conductive film is formed by plating one of nickel, gold, palladium, aluminum and silver. 28. The method according to claim 15, wherein the conductive film has corrosion resistance and is used as a mask when forming the separation groove. 29. The method according to claim 14, wherein the separation groove selectively formed in the conductive foil is formed by chemical or physical etching. 30. The method according to claim 14, wherein the separation groove selectively formed in the conductive foil is formed by chemical or physical etching using the photoresist film as a mask. A method for manufacturing a light irradiation device. 31. The method according to claim 16, wherein the connection unit is formed by wire bonding. 32. The light transmitting resin is attached by transfer molding.
3. A method for manufacturing a light irradiation device according to claim 1. 33. The method for manufacturing a light irradiation device according to claim 19, wherein the light irradiation device coated with the resin capable of transmitting light is separated by dicing or pressing.