JP2002084004A - Method for manufacturing light irradiation device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light irradiation device excellent in heat radiation and productivity. SOLUTION: A process wherein a conducting foil is prepared, isolation trenches shallower than the thickness of the foil are formed in the foil except a region turning to at least conducting paths, and plural conducting paths are formed; a process wherein optical semiconductor elements 65 are fixed on desired conducting paths; A process wherein sealing is so performed that the elements 65 are covered individually with resin 67 capable of transmitting a light which is buried in the trenches; and a process wherein the conducting foil on the side where the isolation trenches are not formed is eliminated are installed. The rear of the conducting path can be served for connection with the outside, and through holes are made unnecessary, so that a light irradiation device 68 excellent in heat radiation is realized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a light irradiation device, and more particularly to a technique for improving the light irradiation efficiency and the reliability of the device.

[0002]

BACKGROUND OF THE INVENTION When it is necessary to irradiate a large amount of light, an electric lamp or the like is generally used. However, the light emitting element 2 may be mounted on the printed circuit board 1 as shown in FIG.

This light emitting element is mainly a light emitting diode (Light Emitting Diode) formed of a semiconductor.
In addition, a semiconductor laser or the like is also conceivable.

The light emitting diode 2 is provided with two leads 3 and 4, and one lead 3 has a back surface (anode electrode or cathode electrode) of the light emitting diode chip 5.
The other lead 4 is electrically connected to an electrode (cathode electrode or anode electrode) on the chip surface via a thin metal wire 6. Further, a transparent resin sealing body 7 for sealing the leads 3 and 4, the chip 5 and the fine metal wire 6 is formed also as a lens.

On the other hand, the printed circuit board 1 is provided with electrodes 8 and 9 for supplying power to the light emitting diode 2, and the leads 3 and 4 are provided in through holes provided therein.
Is inserted, and the light emitting diode 2 is fixed and mounted via solder or the like.

For example, Japanese Patent Application Laid-Open No. 9-252651 describes a light irradiation device using this light emitting diode.

[0007]

However, since the light emitting element 2 described above is a package in which the resin sealing body 7, the leads 3, 4 and the like are incorporated, there is a disadvantage that the size of the mounted substrate 1 becomes large. there were. In addition, there is a problem that the temperature rises as a whole due to poor heat radiation of the substrate itself. For this reason, there has been a problem that the temperature of the semiconductor chip itself also rises, and the driving capability decreases.

The light emitting diode chip 5 emits light also from the side surface of the chip, and there is light traveling toward the substrate 1. However, since the substrate 1 is a printed circuit board, there is also a problem that highly efficient emission of emitting all light upward cannot be performed.

[0009]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and provides a conductive foil, and separates the conductive foil excluding at least a region serving as a conductive path from the conductive foil by a thickness smaller than the thickness of the conductive foil. Forming a groove to form an electrode forming portion composed of a plurality of conductive paths, fixing each optical semiconductor element on a desired conductive path of each of the electrode forming portions, and covering each of the optical semiconductor elements. A step of sealing with a resin capable of transmitting light so as to be filled in the separation groove, and a step of removing the conductive foil on a side where the separation groove is not provided. Is characterized in that a light irradiating device with good heat dissipation can be provided because it can be used for connection with the outside and a through hole is not required.

In addition, a conductive foil is prepared, and a separation groove shallower than the thickness of the conductive foil is formed in the conductive foil except for at least a region serving as a conductive path to form an electrode forming portion including a plurality of conductive paths. And fixing the respective optical semiconductor elements on the desired conductive paths of the respective electrode forming portions, and bonding the electrodes of the respective optical semiconductor elements fixed on the desired conductive paths and other desired conductive paths. Forming a connecting means for electrically connecting, covering each optical semiconductor element, filling the separation groove, and individually molding each optical semiconductor element with a resin capable of transmitting light; A method of manufacturing a light irradiation device, comprising: a step of removing the conductive foil in a thickness portion where a separation groove is not provided; and a step of dividing the non-resin-sealed region into individual light irradiation devices. By providing each light The morphism device is characterized in that suppresses warpage when the resin sealing.

Further, when bending the conductive foil so as to surround at least a region of the conductive foil to which the optical semiconductor element is fixed, the conductive foil is bent so as to have an inclination angle capable of reflecting light of the optical semiconductor element upward. Thereby, the irradiation efficiency is improved.

Furthermore, by bending the conductive foil with a press or the like in a state where the conductive film is formed on the conductive path, the conductive film becomes glossy and the irradiation efficiency can be further improved.

As described above, even if the conductive foil is not bent, a conductive film is formed on the conductive path.
Even when the conductive foil is pressed by a press or the like, the surface of the conductive film is made substantially uniform, gloss is obtained, and irradiation efficiency can be improved.

After covering each of the light irradiation devices with a resin that can transmit light so that the separation grooves are filled, the conductive foil on the side where the separation grooves are not provided is removed,
And a step of separating each light irradiation device coated with the resin capable of transmitting the light, so that each light irradiation device is not separated until the final stage.
The sheets can be supplied to each step as a sheet, and workability is good.

Further, since the resin capable of transmitting the light is individually sealed for each light irradiation device by transfer molding using a mold, the occurrence of warpage is smaller than that for sealing the entire conductive foil. It can be suppressed, workability is good, and an appropriate shape can be made. In particular, it is suitable for forming a lens shape.

In the case where the individual light irradiation devices sealed with a resin capable of transmitting light are separated by a press,
Deburring of conductive foil debris remaining at the end of the light irradiation device becomes unnecessary, and productivity can be improved.

Further, by preparing a conductive foil having a slit in a predetermined area, the stress distortion between the conductive foil and the resin when each light irradiation device is sealed with the resin capable of transmitting light is reduced. The slits alleviate the occurrence of warpage.

In addition, since no slit is provided at least in the resin pouring direction, at the time of transfer molding using a mold, the resin does not flow around the back surface of the conductive foil through the slit. Good workability.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of a method for manufacturing a light irradiation device according to the present invention will be described below with reference to the drawings.

In FIG. 1, reference numeral 61 denotes a sheet-shaped conductive foil, the material of which is selected in consideration of the adhesiveness of a brazing material, bonding properties, and plating properties. The material is Cu (copper).
, A conductive foil mainly composed of Al (aluminum) or Fe-Ni (iron-nickel), Cu
A conductive foil made of an alloy such as -Al (copper-aluminum) or Al-Cu-Al (aluminum-copper-aluminum) is employed.

The thickness of the conductive foil is preferably about 10 μm to 300 μm in consideration of the later etching.
A 00 μm copper foil was used. However, it is basically good to be 300 μm or more and 10 μm or less. As described below,
It is sufficient that the separation groove 64 shallower than the thickness of the conductive foil 61 can be formed.

The sheet-shaped conductive foil 61 is prepared by being wound into a roll with a predetermined width, and may be conveyed to each step described later, or the conductive foil cut into a predetermined size may be used. It may be prepared and transported to each step described later.

Then, plating is performed on predetermined regions on the front and back surfaces of the conductive foil 61, respectively. In the present embodiment, a film made of Ag (silver) (hereinafter, referred to as an Ag film 62) is formed as the conductive film 62. However, the present invention is not limited to this. Au (gold), Ni, Al, Pd (palladium), or the like. Moreover, these corrosion-resistant conductive films have a feature that they can be used as they are as die pads and bonding pads. Furthermore, the Ag coating 62 may be formed only on the surface of the conductive foil 61.

For example, the Ag coating 62 adheres to Au and also adheres to a brazing material. Therefore, Au
If the coating is covered, the Ag on the conductive path 51 is left as it is.
The chip can be thermocompression-bonded to the coating 62, and the chip can be fixed via a brazing material such as solder. Furthermore, since the Au thin wire can be bonded to the Ag conductive film, wire bonding is also possible.

Next, in FIG. 2, the plated conductive foil 61 is subjected to a press process to make a predetermined area of the conductive foil 61 project upward. FIG. 2 shows a state in which the protrusion 63 is formed on the conductive foil 61. An optical semiconductor element 65 to be described later is mounted on the optical semiconductor element disposition portion having a cup-shaped cross section formed by the projection 63. Then, the light from the optical semiconductor element 65 is reflected upward by the inclined portion formed by the convex portion 63, and the irradiation efficiency is improved. More specifically, after covering the conductive foil 61 with the Ag coating 62, the conductive foil 61 is subjected to a press treatment, so that the A in the pressed and bent region (the head of the convex portion 63) is pressed.
There is an advantage that the plating surface of the g coating 62 is made substantially uniform, the gloss becomes higher than other areas, and the reflection efficiency of light from an optical semiconductor element described later is improved. Of course, the conductive film may be formed after pressing, and more specifically, the optical semiconductor element may be formed on a non-pressed conductive foil.

As described above, even if the conductive foil 61 (as well as the Ag coating 62) is pressed with a press or the like in a state where the Ag coating 62 is formed without bending the conductive foil 61, the Ag coating is formed. The plating surface 62 is made substantially uniform, gloss is obtained, and irradiation efficiency can be improved.

Subsequently, in FIG. 3, by subjecting the surface of the conductive foil 61 to a half-etching process using the Ag film 62 as a mask, a non-plated region is half-etched to form an isolation groove 64. Is done. still,
The depth of the separation groove 64 formed by this etching is:
For example, the thickness is 50 μm, and the side surface is rough, so that the adhesiveness to a resin 67 that can transmit light described below is improved.
It should be noted that a resist film may be formed on the Ag film 62 and subjected to a half-etching process using the resist film as a mask. Further, after half etching, Ag
The coating 62 may be formed.

The sectional shape of the side wall of the separation groove 64 has a different structure depending on the removing method. This removal process can employ wet etching, dry etching, laser evaporation, dicing, and the like.

For example, in the case of wet etching, ferric chloride or cupric chloride is mainly used as an etchant, and the conductive foil 61 is dipped in this etchant or showered with this etchant. . Here, since the wet etching is generally performed non-anisotropically, the side surface has a curved structure. At this time, the conductive film 62 applied to the conductive foil 61
Since the optical semiconductor element 65 is disposed on the eaves, the adhesiveness when the optical semiconductor element 65 is covered with a resin 67 capable of transmitting light, which will be described later, is improved. In the present embodiment, a wet etching process is performed.

Furthermore, in the case of dry etching, etching can be performed anisotropically or non-anisotropically. At present, C
It is said that it is impossible to remove u by reactive ion etching, but it can be removed by sputtering. Also,
Depending on the sputtering conditions, etching can be performed anisotropically or non-anisotropically.

In the case of a laser, a separation groove can be formed by directly irradiating a laser beam. In this case, the side surface of the separation groove 64 is rather straight.

Further, in dicing, it is impossible to form a bent complicated pattern, but it is possible to form a lattice-shaped separation groove.

In the step shown in FIG. 3, a photoresist film may be selectively coated instead of the conductive film, and the conductive foil 61 may be half-etched using the resist film as a mask.

Subsequently, in FIG. 4A, the separation groove 64 is formed.
The optical semiconductor element 65 is electrically connected to the conductive foil 61 on which is formed and mounted. Here, a light emitting diode is used as the optical semiconductor element 65, and the optical semiconductor element 65 is die-bonded on a first conductive electrode 51A described later, and the surface of the optical semiconductor element 65 and the second conductive electrode 51B are connected. Wire bonding is performed by the thin metal wires 66 (FIG. 6).
reference).

Next, referring to FIG.
5 is covered with an insulating resin 67 capable of transmitting light transmitting light emitted from the optical semiconductor element 65. In this step, the optical semiconductor element 6 is transferred by transfer molding using a mold 71 (see FIG. 4B).
5 and the conductive foil 61 including the separation groove 64 are sealed with a thermosetting silicone resin or epoxy resin. As described above, the resin must be capable of transmitting light, and a so-called transparent resin or a resin that is opaque but can transmit light of a predetermined wavelength is used.

Here, the feature of the present invention is that a plurality of light irradiation devices 68 (see FIG. 6) formed on the conductive foil 61 are individually resin-sealed. That is, as shown in FIG. 4B and FIG. 5 (a sectional view taken along line AA in FIG. 4B), the optical semiconductor element 65 of each light irradiation device 68 is formed by using a mold and an insulating resin 67. To form a lens.

Accordingly, when the light irradiation device 68 is formed on the thin conductive foil 61, the occurrence of warpage can be suppressed as compared with the method in which the entire conductive foil is covered with the insulating resin 67. it can. In particular, the present invention is suitable for handling a resin in which a filler for preventing warpage, which is applied to a device for sealing an element to be irradiated with light, cannot be mixed. That is, if the optical semiconductor element 65 is sealed with the resin mixed with the filler, light emitted from the optical semiconductor element 65 is irregularly reflected.

Furthermore, the present invention may be applied to an element for receiving light, an element for transmitting and receiving light, in addition to the element for irradiating light. Of course, the present invention does not exclude covering the whole of the conductive foil with the insulating resin 67.

Further, in the present embodiment, in consideration of the problem that the conductive foil 61 is warped, each light irradiation device 68 is individually molded with the insulating resin 67 as one unit. Is not limited to that,
Various configurations can be applied within a range in which the occurrence of warpage can be suppressed. For example, when the conductive foil 61 is treated as one sheet, the conductive foil 61 is separated such that the sealing resin is separated at a predetermined interval. By putting a slit at the desired position, the insulating resin 67 is subdivided by the slit, and a method of suppressing the occurrence of warpage can be considered.

That is, as shown in FIG. 4B, the conductive foil 61 is provided with slits 70A and 70B in predetermined regions, and the light irradiating devices 68 are formed in desired regions of the conductive foil 61 in accordance with the above-described steps. Is formed.

Then, each light irradiation device 68 is sealed with a resin by pouring a resin into a mold shown by a dotted line in FIG. 4B.

In this embodiment, the slit is not provided at least in the resin pouring direction along the resin injection path 72 (indicated by an arrow in FIG. 4B). In the present embodiment, a slit is formed in the conductive foil 61 for each row of the light irradiation devices 68 arranged in a matrix.

For this reason, the light irradiating device 68 formed on the conductive foil 61 is sealed with a resin, and the stress distortion between the conductive foil 61 and the insulating resin 67 when the resin is cured is reduced by the slits 70A and 70B. And the occurrence of warpage of the conductive foil 61 due to stress strain can be suppressed.

Further, such slits 70A, 70B
In the case where the conductive foil 61 provided with is provided, the insulating resin 67 is divided by the slits 70A and 70B even in a process in which the entirety of the conductive foil 61 is collectively sealed with the insulating resin 67. As if, one or a plurality of light irradiation devices 68 were individually molded with the insulating resin 67.

Further, as described above, the places where the slits are formed can be changed in various ways. For example, the light irradiation devices 68 arranged in a plurality of rows can be provided in the conductive foil 61 by a desired number of rows.
A slit may be formed in the slit. Of course, the interval between slits is adjusted according to the thickness of the conductive foil 61 or the insulating resin 67.

As described above, in this embodiment, the arrangement positions of the slits 70A and 70B are specified, and the slits are not formed at least in the direction intersecting with the resin pouring direction.
The resin does not go around the back surface of the conductive foil 61 through the slit. Therefore, in such a case, there is no need to add a step of removing the resin that has wrapped around the back surface, and the workability is good.

Furthermore, in the present invention, since the thin conductive foil 61 is used, the position where the slit is to be formed is specified in consideration of the risk that the conductive foil 61 may be damaged when handling by handling the slit. .

That is, if only the purpose of suppressing the occurrence of the warpage is considered, the light irradiation device 68 may be formed so as to surround the four sides, but in the present invention, the shape of the conductive foil 61 is considered in consideration of the strength of the conductive foil 61. Multiple types of different slits are prepared.

In the present embodiment, for example, slits 70A and 70A are respectively formed in the vicinity of the light irradiation devices 68 arranged in two rows, and each of the slits 70A and 70A is formed in the vicinity of the light irradiation devices 68 arranged in two lines adjacent thereto. A slit 70B is formed so as to straddle the light irradiation device 68. Thereby, the slit 70
By leaving the conductive foil 61 between A and the slit 70A to compensate for the strength, and by forming the slit 70B that straddles each light irradiation device 68, the occurrence of warpage can be further suppressed.

As described above, in the present invention, by alternately arranging the slits having different shapes for each row of the light irradiation device 68, it is possible to prevent the conductive foil 61 from being broken. Of course, slits may be alternately inserted in a plurality of rows.

Here, the resin 67 capable of transmitting the light is:
In order to collect as much light as possible from the optical semiconductor element 65 and emit the light upward, the lens has an upwardly convex lens shape. Therefore, when viewed from above, it has a substantially circular shape as shown in FIG. Note that the thickness of the resin 67 (lens) capable of transmitting light that is coated on the surface of the conductive foil 61 can be increased or decreased in consideration of strength.

The feature of this step is that the conductive foil 61 serves as a supporting substrate until the resin 67 that can transmit light serving as a lens is covered. Since the heat radiation is better than that of the conventional structure (see FIG. 21) in which the light emitting element 2 is mounted on the printed circuit board 1, the driving capability can be improved.

Furthermore, in the present invention, since the conductive foil 61 serving as the support substrate is a material necessary as an electrode material, it has an advantage that the constituent materials can be reduced as much as possible and the cost can be reduced.

Since the separation grooves 64 are formed shallower than the thickness of the conductive foil 61, the conductive foils 61 are not individually separated as the conductive paths 51. Therefore, when molding the resin 67 that can be handled as a sheet-shaped conductive foil 61 and can transmit light, there is an advantage that the work of transporting to the mold and mounting on the mold becomes very simple.

When the optical semiconductor element 65 is sealed with a resin,
Instead of using a mold, a potting resin may be applied from above the optical semiconductor element 65 to form a lens shape.

However, in this case, since the viscosity of both the silicone resin and the epoxy resin at the time of heat curing is low, there is a problem that the silicone resin and the epoxy resin cannot be stably formed into a hemispherical shape which is preferable as a lens. According to the lens forming method, there is an advantage that a stable lens shape can be formed. Note that, for a configuration that does not require a lens shape, the thickness of the insulating resin 67 may be relatively thin, and may not be a transfer mold using a mold.

Subsequently, there is a step of chemically and / or physically removing the back surface of the conductive foil 61 in FIG. Here, this removing step is performed by polishing, grinding, etching, laser metal evaporation, or the like.

In the present embodiment, the conductive foil 61 is formed by using the Ag film 62 applied on the back surface of the conductive foil 61 as a mask.
Is wet-etched to cut the conductive foil 61 below the separation groove 64 to expose the resin 67 that can transmit light, thereby separating the conductive paths 51. Accordingly, a structure is obtained in which the surfaces of the conductive paths 51A and 51B (the first conductive electrode and the second conductive electrode) are exposed from the resin 67 capable of transmitting light.

The back surface of the conductive foil 61 may be shaved by about 50 to 60 μm by a polishing device or a grinding device to expose the resin 67 that can transmit light from the separation groove 64. In this case, the thickness is about 40 μm. The conductive paths 51 are separated from each other. Further, the entire surface of the conductive foil 61 is wet-etched until just before the resin 67 capable of transmitting light is exposed.
The entire surface may be shaved by a polishing or grinding device to expose the resin 67 that can transmit light. In this case, the conductive path 51 is embedded in the resin 67 capable of transmitting light, and a flat light irradiation device in which the back surface of the resin 67 capable of transmitting light and the back surface of the conductive path 51 match can be realized.

More specifically, when the back surface of the conductive foil 61 is shaved by the above-described polishing device or grinding device to separate the conductive paths 51, the exposed conductive paths 51
May be coated with a conductive material such as solder, and the conductive path 51 may be subjected to an oxidation preventing treatment.

Finally, there is a step of separating adjacent light irradiation devices individually to complete a light irradiation device.

This separation step can be realized by dicing, cutting, chocolate break and the like. Further, a peeling method using a press or the like as described later may be used. Here, when the peeling method using a press or the like is adopted, the copper pieces 69 are formed from both ends of the resin 67 capable of transmitting the light that covers the light irradiation device 68 by the pressing force of the press machine indicated by the one-dot chain line in FIG. The light irradiation devices 68 are separated from each other. In this case, deburring of the back surface is not required as compared with dicing, cutting, and the like, so that there is an advantage that workability is good.

The feature of this manufacturing method is that the conductive path 51 can be separated using the resin 67 that can transmit light as a supporting substrate. The resin 67 capable of transmitting light is used for the conductive path 5.
This is a material necessary as a material for embedding 1 and does not require a substrate dedicated to support during the manufacturing process. Therefore, it has a feature that it can be manufactured with a minimum amount of material and that cost reduction can be realized.

The thickness of the resin that can transmit light from the surface of the conductive path 51 can be adjusted at the time of attaching the resin that can transmit light in the previous step. Therefore, the thickness of the light irradiating device 68 has a characteristic that it can be thick or thin, though it depends on the optical semiconductor element to be mounted. Here, a light irradiation device in which a 40 μm conductive path 51 and an optical semiconductor element are embedded in a resin 67 capable of transmitting light having a thickness of 400 μm (see FIGS. 8 and 9).

Here, FIG. 10 shows an illuminating device in which the above-mentioned light irradiating devices 68 (light emitting diodes) are connected in series between the electrodes 30 and 31 so that the current value passing through the light irradiating devices 68 is constant. 40 is shown.

Ten electrodes are formed between the electrode 30 and the electrode 31, and the back surface of the chip serving as the cathode electrode (or the anode electrode) of the light irradiation device 68 is fixed to the electrode 32. The electrode 30 and the electrode 30 are connected by a thin metal wire 66. Further, the back surface of the chip of the second light irradiation device 68 is fixed to the electrode 33, and the electrode on the chip surface and the electrode 32 are connected by a thin metal wire 66. That is, the electrode to which the chip back surface serving as the cathode electrode (or the anode electrode) is fixed is connected to the thin metal wire extending from the anode electrode (or the cathode electrode) of the next light irradiation device 68. By repeating this connection form, a series connection is realized. The light irradiation device 68 is, for example, XY
It is arranged at a predetermined position of the electrode by a robot or the like having an arm movable in −Z (X direction−Y direction−up / down direction).

Further, in order to use the electrode made of copper foil as a reflection plate, the surface is coated with Ni. Further, in order to make the whole area of the substrate substantially a reflection plate, 12 electrodes from the right electrode 30 to the left electrode 31 are formed. It is patterned so as to be substantially completely covered by the individual electrodes.

According to the illumination device 40, the light irradiation device 6
The heat generated from 8 is radiated through the metal substrate 11, and has an advantage that the driving current of the light irradiation device 68 can be increased.

Although not shown in the drawings, the illumination device 40 having good heat radiation can be realized by connecting the light irradiation devices 68 in parallel or by connecting the parallel connection and the series connection in combination. . (Second Embodiment) Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.

Here, the difference between the features of the first embodiment and the features of the second embodiment will be described. In the first embodiment, as shown in FIG.
When forming the separation groove 64 by half etching 1
Etching is performed so that the opening diameter of the upper part of the separation groove 64 is larger than the opening diameter of the conductive film 62, so that the conductive film 62 remains over the separation groove 64 in an eaves shape. The eaves are used to improve the adhesion between the conductive foil 61 and the insulating resin 67.

On the other hand, in the second embodiment, FIG.
2 and the like, the conductive film 1 formed on the conductive foil 161
The formation region of the conductive foil 161 and the insulating resin 167 are formed by limiting the formation region of the conductive foil 161 to a region as narrow as possible (a narrower range as compared with the first embodiment) and increasing the exposed portion of the conductive foil 161.
It is intended to improve the adhesion to the substrate. That is, for example, when the conductive foil 161 is made of Cu and the conductive film 162 is made of Ag, the adhesion of the conductive film 162 to the insulating resin 167 is inferior to that of Cu. The region is made as narrow as possible, the exposed portion of the conductive foil 161 having relatively good adhesion to the insulating resin 167 is increased, and the adhesion to the insulating resin 167 is improved.

Hereinafter, the second embodiment will be described. The configuration other than that the region where the conductive film 162 is formed is narrowed is as follows.
The reference numerals of the drawings used in the first embodiment plus 100 are used.

In FIG. 11, reference numeral 161 denotes a sheet-shaped conductive foil, which material is selected in consideration of the adhesiveness, bonding property and plating property of the brazing material. Conductive foil or F made mainly of Al
A conductive foil or the like made of an alloy such as e-Ni, Cu-Al, or Al-Cu-Al is employed.

The thickness of the conductive foil is preferably about 10 μm to 300 μm in consideration of the later etching.
A 00 μm copper foil was used. However, it is basically good to be 300 μm or more and 10 μm or less. As described below,
It is sufficient that the separation groove 164 shallower than the thickness of the conductive foil 61 can be formed.

The sheet-shaped conductive foil 161 is prepared by being wound into a roll with a predetermined width, and may be conveyed to each step described later, or the conductive foil cut into a predetermined size may be used. It may be prepared and transported to each step described later.

Then, by performing a half-etching process using the photoresist film 160 formed on the conductive foil 161 as a mask, a predetermined region of the conductive foil 161 is half-etched to form a separation groove 164. The depth of the separation groove 164 formed by this etching is
For example, the thickness is 50 μm, and the side surface is rough, so that the adhesiveness to an insulating resin 167 that can transmit light, which will be described later, is improved.

It is also possible to form an Ag film 162 described later on the conductive foil 161 and then half-etch using a photoresist film formed so as to completely cover the Ag film 162 as a mask. .

The sectional shape of the side wall of the separation groove 164 varies depending on the removal method. This removal process can employ wet etching, dry etching, laser evaporation, dicing, and the like.

For example, in the case of wet etching, ferric chloride or cupric chloride is mainly used as an etchant, and the conductive foil 161 is dipped in the etchant or showered with the etchant. . Here, since the wet etching is generally performed non-anisotropically, the side surface has a curved structure.

Further, in the case of dry etching, etching can be performed anisotropically or non-anisotropically. At present, C
It is said that it is impossible to remove u by reactive ion etching, but it can be removed by sputtering. Also,
Depending on the sputtering conditions, etching can be performed anisotropically or non-anisotropically.

In the case of a laser, a separation groove can be formed by directly irradiating a laser beam. In this case, the side surface of the separation groove 164 is formed straight.

Further, in dicing, it is impossible to form a bent complicated pattern, but it is possible to form a lattice-shaped separation groove.

Next, referring to FIG.
A plating process is performed on predetermined regions on the front surface and the rear surface, respectively. In the present embodiment, a film made of Ag (hereinafter, referred to as an Ag film 162) is formed as the conductive film 162. However, the present invention is not limited to this. For example, Au, Ni, Al or Pd.
Moreover, these corrosion-resistant conductive films have a feature that they can be used as they are as die pads and bonding pads. Furthermore, the Ag coating 162 may be formed only on the surface of the conductive foil 161.

For example, the Ag coating 162 adheres to Au and also adheres to the brazing material. Therefore, A
If the u film is coated, the chip can be thermocompression-bonded to the Ag film 162 on the conductive path 151 as it is, and the chip can be fixed via a brazing material such as solder. Furthermore, since the Au thin wire can be bonded to the Ag conductive film, wire bonding is also possible.

The region where the Ag coating 162 formed on the conductive foil 161 is a feature of the second embodiment is as follows.
The area is smaller than the area where the Ag film 62 is formed in the first embodiment. That is, in the second embodiment, at least only the upper surface portion of the optical semiconductor element disposing portion having a cup-shaped cross section formed by the convex portion 163 formed by pressing the conductive foil 161 as described later,
5 and the extent to which a reflecting surface can be ensured so that the light irradiated from the convex portion 163 is reflected by the inclined portion formed by the convex portion 163; It is sufficient that the electrode 151B) has an area large enough to secure it. As a result, the conductive foil 161 on which the optical semiconductor element 165 is mounted is removed from the insulating resin 16.
When the resin sealing is performed by using the resin 7, the contact area between the conductive foil 161 and the insulating resin 167 is increased as compared with the first embodiment, so that the adhesion between the conductive foil 161 and the insulating resin 167 is improved. (See FIGS. 13 to 15).

Next, in FIG. 13, a press process is performed on the conductive foil 161 subjected to the plating process so that a predetermined region of the conductive foil 161 is raised upward. Note that FIG.
5 shows a state in which the protrusion 163 is formed on the conductive foil 161. An optical semiconductor element 165 to be described later is provided in the optical semiconductor element arrangement portion having a cup-shaped cross section formed by the convex portion 163.
Is mounted. Then, the light from the optical semiconductor element 165 is reflected upward by the inclined portion formed by the convex portion 163, and the irradiation efficiency is improved. More specifically, the Ag coating 1
62, the conductive foil 161 is coated.
Is pressed, the plated surface of the Ag coating 162 in the pressed and bent region (the head of the convex portion 163) is made substantially uniform, and the surface becomes more glossy than other regions. There is an advantage that the reflection efficiency of light from the semiconductor element is improved. Of course, the conductive film may be formed after pressing, and more specifically, the optical semiconductor element may be formed on a non-pressed conductive foil.

As described above, even if the conductive foil 161 is not bent, the conductive foil 161 (and the Ag coating 16) can be pressed or the like while the Ag coating 162 is formed.
Even if only 2) is pressed, the plating surface of the Ag coating 162 is made substantially uniform, gloss is obtained, and irradiation efficiency can be improved.

Subsequently, in FIG. 14, the optical semiconductor element 165 is electrically connected to the conductive foil 161 on which the separation groove 164 is formed and mounted. Here, a light emitting diode is used as the optical semiconductor element 165, and the optical semiconductor element 165 is used.
Is die-bonded onto a first conductive electrode 151A, which will be described later, and the surface of the optical semiconductor element 165 and the second conductive electrode 151B are wire-bonded with a thin metal wire 166 (see FIG. 16).

Next, in FIG. 15, the optical semiconductor element 1 is placed on the conductive foil 161 including the optical semiconductor element 165.
Covering with an insulating resin 167 capable of transmitting light transmitted from the light emitted from 65. In this step, the conductive foil 161 including the optical semiconductor element 165 and the separation groove 164 is sealed with a thermosetting silicone resin or epoxy resin by transfer molding using a mold 171. As described above, the resin must be capable of transmitting light, and a so-called transparent resin or a resin that is opaque but can transmit light of a predetermined wavelength is used.

The feature of the present invention is that the conductive foil 16
That is, the plurality of light irradiation devices 168 (see FIG. 16) formed on the first device are individually resin-sealed. That is, as shown in FIG. 14B and FIG. 15 (a cross-sectional view taken along the line AA in FIG. 14B), the optical semiconductor element 165 of each light irradiation device 168 is formed by using a mold to form an insulating resin To form a lens.

Thus, when the light irradiation device 168 is formed on the thin conductive foil 161, it is possible to suppress the occurrence of warpage as compared with a method in which the entire conductive foil is covered with the insulating resin 167. it can. In particular, the present invention is suitable for handling a resin which cannot be mixed with a filler for preventing warpage, which is applied to a device for sealing an element to be irradiated with light as in the present invention. That is, if the optical semiconductor element 165 is sealed with the resin mixed with the filler, light emitted from the optical semiconductor element 165 is irregularly reflected.

Further, the present invention may be applied to an element for receiving light, an element for transmitting and receiving light, in addition to an element for irradiating light. Of course, the present invention does not exclude covering the entire conductive foil with the insulating resin 167.

In this embodiment, in consideration of the problem that the conductive foil 161 is warped, each light irradiation device 168
Is individually molded with the insulating resin 167 as a unit, but the present invention is not limited to this, and various configurations can be applied as long as the occurrence of warpage can be suppressed. When the conductive foil 161 is treated as one sheet, a slit is formed at a desired position of the conductive foil 161 so that the sealing resin is divided at a predetermined interval, whereby the insulating resin 167 is subdivided by the slit. Therefore, a method of suppressing the occurrence of warpage is also conceivable.

That is, as shown in FIG. 14B, the conductive foil 161 is provided with slits 170A and 170B in predetermined areas, and the light irradiation devices 168 are formed in desired areas of the conductive foil 161 in accordance with the above-described steps. Is formed.

Then, each light irradiation device 168 is sealed with a resin by pouring a resin into a mold shown by a dotted line in FIG.

Here, in the present embodiment, at least the resin flowing direction along the resin injection path 172 (FIG. 14B)
Are indicated by arrows. ) Is not provided with the slit. In this embodiment, the conductive foils 161 are arranged on a row-by-row basis with respect to each of the light irradiation devices 168 arranged in a matrix.
There is a slit in.

For this reason, the light irradiation device 168 formed on the conductive foil 161 is sealed with a resin, and the stress and strain of the conductive foil 161 and the insulating resin 167 when the resin is cured are reduced.
Warpage of the conductive foil 161 due to stress and strain can be suppressed by being relaxed by the slits 170A and 170B.

Further, such slits 170A, 17
In the case where the conductive foil 161 provided with 0B is used, even if the entirety of the conductive foil 161 is collectively sealed with the insulating resin 167, the slits 170A, 170
B separates the insulating resin 167, so that
One or a plurality of light irradiation devices 168 are connected to the insulating resin 167.
It becomes as if individually molded.

Further, as described above, the places where the slits are formed can be variously changed. For example, the light irradiation devices 168 arranged in a plurality of rows may be provided in the conductive foil 1 by a desired number of rows.
A slit may be provided in 61. Of course, the interval between slits is adjusted according to the thickness of the conductive foil 161 or the insulating resin 167.

As described above, in the present embodiment, since the arrangement position of the slits 170A and 170B is specified and the slit is not formed at least in the direction intersecting with the resin pouring direction, the resin is applied to the back surface of the conductive foil 161 through the slit. There is no sneaking around. Therefore, in such a case, there is no need to add a step of removing the resin that has wrapped around the back surface, and the workability is good.

Further, in the present invention, the thin conductive foil 161 is used.
Therefore, the position where the slit is to be formed is specified in consideration of the risk that the conductive foil 161 may be damaged during handling by inserting the slit.

That is, considering only the purpose of suppressing the occurrence of the warpage, each light irradiation device 168 may be formed so as to surround the four sides, but in the present invention, the shape of the conductive foil 161 is considered in consideration of the strength of the conductive foil 161. Multiple types of different slits are prepared.

In the present embodiment, for example, the slits 170A and 170A are located near the light irradiation devices 168 arranged in two rows, respectively.
0A is formed, and a slit 170B is formed so as to straddle each light irradiation device 168 in the vicinity of the two light irradiation devices 168 arranged next to each other. This allows
Conductive foil 1 between slits 170A
By leaving 61, the intensity can be compensated, and by forming a slit 170B that straddles each light irradiation device 168, the occurrence of warpage can be further suppressed.

As described above, in the present invention, the light irradiation device 168
By alternately arranging slits having different shapes for each row, problems such as breakage of the conductive foil 161 are prevented. Of course, slits may be alternately inserted in a plurality of rows.

Here, the resin 167 capable of transmitting the light is used.
Has an upwardly convex lens shape in order to collect as much light as possible from the optical semiconductor element 165 and emit it upward. Therefore, when viewed from above, it has a substantially circular shape as shown in FIG. The thickness of the resin 167 (lens) capable of transmitting light, which is coated on the surface of the conductive foil 161, can be increased or decreased in consideration of strength.

The feature of this step is that the conductive foil 161 serves as a supporting substrate until the resin 167 which can transmit light to be a lens is covered. Since the heat radiation is better than that of the conventional structure (see FIG. 21) in which the light emitting element 2 is mounted on the printed circuit board 1, the driving capability can be improved.

Further, in the present invention, since the conductive foil 161 serving as a support substrate is a material necessary as an electrode material,
There is an advantage that the operation can be performed while omitting the constituent materials as much as possible, and the cost can be reduced.

The separation groove 164 is formed in the conductive foil 161.
The conductive foils 161 are not individually separated as conductive paths 151 because they are formed shallower than the thickness of the conductive foil 161. Therefore,
When molding the resin 167 that can be handled integrally as a sheet-shaped conductive foil 161 and can transmit light, transportation to a mold,
There is an advantage that the work of mounting on the mold is very simple.

When the optical semiconductor element 165 is sealed with a resin, a potting resin may be applied from above the optical semiconductor element 165 to form a lens, instead of using a mold.

However, in this case, since the viscosity of both the silicone resin and the epoxy resin at the time of heat curing is small, there is a problem that the silicone resin and the epoxy resin cannot be stably formed into a hemispherical shape which is preferable as a lens. According to the lens forming method, there is an advantage that a stable lens shape can be formed. Note that, for a configuration that does not require a lens shape, the thickness of the insulating resin 67 may be relatively thin, and may not be a transfer mold using a mold.

Subsequently, in FIG. 16, the back surface of the conductive foil 161 is chemically and / or physically removed to remove the conductive path 151.
There is a step of separation. Here, the removing step is performed by polishing, grinding, etching, laser metal evaporation, or the like.

In the present embodiment, the conductive foil 161 is wet-etched using the Ag coating 162 deposited on the back surface of the conductive foil 161 as a mask, and the conductive foil 161 below the separation groove 164 is shaved to transmit light. The conductive resin 151 is separated by exposing the possible resin 167. Thereby, the conductive paths 151A and 151B are separated from the resin 167 which can transmit light.
(The first conductive electrode and the second conductive electrode) are exposed.

The back surface of the conductive foil 161 is ground by about 50 to 60 μm with a polishing device or a grinding device, and
4, the resin 167 capable of transmitting light may be exposed,
In this case, the conductive paths 151 having a thickness of about 40 μm are separated. Alternatively, the entire surface of the conductive foil 161 may be wet-etched before the light-permeable resin 167 is exposed, and thereafter, the entire surface may be shaved by a polishing or grinding device to expose the light-permeable resin 167. In this case, the conductive path 151 is embedded in the resin 167 capable of transmitting light, and the back surface of the resin 167 capable of transmitting light is connected to the conductive path 15.
A flat light irradiation device in which the back surfaces of the light emitting devices 1 coincide with each other can be realized.

More specifically, the back surface of the conductive foil 161 is shaved by the above-described polishing device or grinding device and the like.
When the conductive paths 151 are separated from each other, a conductive material such as solder is applied to the exposed conductive paths 151 as necessary.
May be subjected to antioxidation treatment.

Lastly, there is a step of separating the adjacent light irradiation devices individually to complete the light irradiation device.

This separation step can be realized by dicing, cutting, chocolate break, or the like. Further, a peeling method using a press or the like as described later may be used. Here, when the peeling method using a press or the like is adopted, the copper piece 1 is cut from both ends of the resin 167 that can transmit light by covering the light irradiation device 168 by the pressing force of the press machine indicated by the dashed line in FIG.
69 is peeled off, and each light irradiation device 168 is separated.
In this case, deburring of the back surface is not required as compared with dicing, cutting, and the like, so that there is an advantage that workability is good.

The feature of the present manufacturing method is that the conductive path 151 can be separated using the resin 167 capable of transmitting light as a supporting substrate. The resin 167 capable of transmitting light is a material necessary as a material for embedding the conductive path 151, and does not require a substrate dedicated to support during the manufacturing process. Therefore, it has a feature that it can be manufactured with a minimum amount of material and that cost reduction can be realized.

The thickness of the resin capable of transmitting light from the surface of the conductive path 151 can be adjusted at the time of attaching the resin capable of transmitting light in the previous step. Therefore, the thickness of the light irradiation device 168 can be made thicker or thinner, though it depends on the mounted optical semiconductor element. Here, a light irradiation device in which a 40 μm conductive path 151 and an optical semiconductor element are embedded in a resin 167 capable of transmitting light having a thickness of 400 μm is provided.
18 and 19).

Here, FIG. 20 shows the electrode 130 and the electrode 131.
The light irradiating device 168 (light emitting diode) is connected in series between the light irradiating device 168 and the light irradiating device 168.

Between the electrodes 130 and 131,
Ten electrodes are formed, and the light irradiation device 16 is
The rear surface of the chip serving as the cathode electrode (or the anode electrode) of No. 8 is fixed, and the anode electrode (or the cathode electrode) and the electrode 130 are connected by the thin metal wire 166. Further, the back surface of the chip of the second light irradiation device 168 is fixed to the electrode 133, and the electrode on the chip surface and the electrode 132 are connected to the thin metal wire 166.
Connected with. That is, the electrode to which the chip back surface serving as the cathode electrode (or the anode electrode) is fixed is connected to the thin metal wire extending from the anode electrode (or the cathode electrode) of the next light irradiation device 168. By repeating this connection form, a series connection is realized.

Further, in order to use the electrode made of copper foil as a reflector, the surface is coated with Ni. Further, in order to make the entire substrate substantially a reflector, the right electrode 130 to the left electrode 131 are used.
Are patterned so as to be substantially completely covered by the twelve electrodes. The light irradiation device 168 includes, for example, X-
It is arranged at a predetermined position of the electrode by a robot having an arm movable in YZ (X direction-Y direction-up and down direction).

According to this structure, the heat generated from the light irradiation device 168 is radiated through the metal substrate 111, and the driving current of the light irradiation device 168 can be increased.

Although not shown in the drawings, a lighting device 140 having good heat dissipation can be realized similarly by connecting the light irradiation devices 168 in parallel or by connecting the parallel connection and the series connection in combination. .

The conductive foils 61 and 161 and the insulating resin 6
As means for improving the adhesion with the conductive foils 61 and 167, the conductive foils 61 and 162 can be formed without forming the conductive coatings 62 and 162.
161 is oxidized and copper oxide (CuO or CuO
₂ O), the conductive foils 61 and 161 and the insulating resin 6
7,167 can be improved.

Furthermore, as a result of the analysis by the present inventors, the surface state of the conductive foils 61 and 161 is more C-state than CuO state.
It has been found that the lower the u ₂ O state, that is, the lower the oxidation rate, the better the adhesion.

[0126]

As is apparent from the above description, according to the present invention, light irradiation which is composed of optical semiconductor elements, conductive paths (conductive electrodes) and a resin capable of transmitting light is required at a minimum, and wastes resources. Device. Therefore, it is possible to realize a light irradiation device that has no extra components until completion and can greatly reduce the cost. In addition, by setting the coating thickness of the resin capable of transmitting light and the thickness of the conductive foil to optimal values, it is possible to realize a very small, thin, and lightweight light irradiation device.

Further, since only the back surface of the conductive path is exposed from the resin which can transmit light, the back surface of the conductive path can be immediately used for connection to the outside, and the back electrode and the through hole of the conventional structure are unnecessary. It has the advantage that can be. In addition, heat dissipation can be improved as compared with a conventional configuration in which an optical semiconductor element is mounted on a printed board, and the driving capability of the optical semiconductor element can be improved.

In addition, by forming a conductive film on at least a region to be a conductive path on the surface of the conductive foil, when a separation groove is formed in the conductive foil, the conductive film is overlaid on the upper surface of the conductive foil. Therefore, when the light irradiation device is covered with a resin that can transmit light, the adhesion between the conductive foil and the resin that can transmit light is improved.

Further, when the conductive foil is bent so as to surround at least a region of the conductive foil to which the optical semiconductor element is fixed, the conductive foil is bent so as to have an inclination angle capable of reflecting light of the optical semiconductor element upward. Thereby, the irradiation efficiency is improved.

Further, by bending the conductive foil with a press or the like in a state where the conductive film is formed on the conductive path, the conductive film becomes glossy and the irradiation efficiency can be further improved.

Further, by pressing the conductive foil with a press or the like in a state where the conductive film is formed on the conductive path, the conductive film becomes glossy and the irradiation efficiency can be improved.

After covering each of the light irradiating devices with a resin capable of transmitting light so as to fill the separation grooves, the conductive foil on the side where the separation grooves are not provided is removed to remove the resin. And exposing each light irradiation device coated with the light-permeable resin to each other, so that each light irradiation device is not separated until the final stage, so that the conductive foil is It can be provided as a single sheet for each process, and the workability is good.

Further, since the light-permeable resin is attached by transfer molding using a mold, workability is good and an appropriate shape can be formed. Particularly, it is suitable for forming a lens shape.

In the case where the individual light irradiation devices sealed with the resin capable of transmitting light are separated by a press,
Deburring of the end of the light irradiation device is not required, and productivity is improved.

Further, in the resin sealing step when forming the light irradiation device using the conductive foil, the occurrence of warpage can be suppressed by individually molding each light irradiation device.

Further, by using the conductive foil provided with the slit, the stress distortion between the conductive foil and the resin when the light irradiation device is sealed with the resin is reduced by the slit.
Warpage can be suppressed.

Further, by forming a conductive film only on at least a limited area of the conductive foil surface, which is a region serving as a conductive path, and narrowing the range of the conductive foil covered with the conductive film, the light irradiation is performed. When the device is covered with a light-permeable resin, the adhesion between the conductive foil and the light-permeable resin is improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a method for manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a method for manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 4 is a diagram illustrating a method for manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 5 is a cross-sectional view for explaining the method for manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 6 is a cross-sectional view for explaining the method for manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 7 is a cross-sectional view for explaining the method for manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 8 is a cross-sectional view for explaining the method for manufacturing the light irradiation device according to the first embodiment of the present invention.

FIG. 9 is a plan view of the light irradiation device according to the first embodiment of the present invention.

FIG. 10 is a diagram illustrating a light irradiation device according to the first embodiment of the present invention.

FIG. 11 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to a second embodiment of the present invention.

FIG. 12 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.

FIG. 13 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.

FIG. 14 is a diagram illustrating a method for manufacturing a light irradiation device according to a second embodiment of the present invention.

FIG. 15 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.

FIG. 16 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.

FIG. 17 is a cross-sectional view for explaining the method for manufacturing the light irradiation device according to the second embodiment of the present invention.

FIG. 18 is a cross-sectional view for explaining the method for manufacturing the light irradiation device according to the second embodiment of the present invention.

FIG. 19 is a plan view of a light irradiation device according to a second embodiment of the present invention.

FIG. 20 is a diagram illustrating a light irradiation device according to a second embodiment of the present invention.

FIG. 21 is a diagram illustrating a conventional light irradiation device.

[Explanation of symbols]

 Reference Signs List 51 conductive path (electrode) 61 conductive foil 62 conductive film 63 convex part (inclined part) 64 separation groove 65 optical semiconductor element 66 thin metal wire 67 resin capable of transmitting light 68 light irradiation device 70A slit 70B slit 151 conductive path (electrode) 161 Conductive foil 162 Conductive coating 163 Convex portion (inclined portion) 164 Separation groove 165 Optical semiconductor element 166 Metal thin wire 167 Resin capable of transmitting light 168 Light irradiation device 170A Slit 170B Slit

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Junji Sakamoto 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Shigeaki Mashimo 2-5-2 Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd. (72) Katsumi Okawa 2-5-5 Keihanhondori 2-chome, Moriguchi-shi, Osaka Prefecture (72) Inventor Eiji Hisashi Maehara 2 Keihanhondori, Moriguchi-shi, Osaka 5-5-5 Sanyo Electric Co., Ltd. (72) Inventor Koji Takahashi 29 Kitacho, Isesaki-shi, Gunma Kanto Sanyo Electronics Co., Ltd. F-term (reference) 5F041 AA33 DA03 DA07 DA07 DA13 DA43

Claims (20)

[Claims] A step of forming a separation groove shallower than the thickness of the conductive foil in a conductive foil excluding at least a region serving as a conductive path to form a plurality of electrode forming portions including a plurality of conductive paths; Fixing each optical semiconductor element on a desired conductive path on the electrode forming portion; and individually covering each optical semiconductor element with a resin capable of transmitting light so as to fill the separation groove; Removing the conductive foil on the side on which the separation groove is not provided, and exposing the resin. 2. A method for manufacturing a light irradiation device, wherein a slit is provided in a predetermined area of the conductive foil. 3. After the step of fixing each of the optical semiconductor elements on a desired conductive path on each of the electrode forming portions, an electrode of each of the optical semiconductor elements fixed on the desired conductive path is connected to another desired conductive layer. The method for manufacturing a light irradiation device according to claim 1, further comprising a step of forming a connecting means for electrically connecting the light irradiation device to the road. 4. Prior to the step of fixing each optical semiconductor element on at least a desired conductive path on each of the electrode forming portions, the conductive foil is so formed as to surround at least a region of the conductive foil to which the optical semiconductor element is fixed. The method for manufacturing a light irradiation device according to claim 1, further comprising a step of bending. 5. The method according to claim 1, further comprising, before the step of fixing each semiconductor element on the conductive path, a step of forming a conductive film on at least a region to be a conductive path on the surface of the conductive foil. The manufacturing method of the light irradiation apparatus of Claim. 6. The method according to claim 1, further comprising, after the step of forming a conductive film on the conductive foil, bending the conductive foil so as to surround at least a region of the conductive foil to which the optical semiconductor element is fixed. Item 6. A method for manufacturing a light irradiation device according to Item 5. 7. The method according to claim 5, further comprising, after the step of forming a conductive film on the conductive foil, a step of pressing at least a region of the conductive foil to which the optical semiconductor element is fixed. Of manufacturing a light irradiation device. 8. The method according to claim 1, further comprising, after the step of individually covering each of the optical semiconductor elements with a resin capable of transmitting light, a step of separating the optical semiconductor elements individually covered with the resin capable of transmitting light. The method for manufacturing a light irradiation device according to claim 1, wherein: 9. After the step of fixing each optical semiconductor element on the conductive path, the electrode of each optical semiconductor element fixed on the desired conductive path is electrically connected to another desired conductive path. Forming a connecting means, and after the step of individually covering with the resin, further comprising a step of separating each optical semiconductor element individually covered with the light-permeable resin. A method for manufacturing a light irradiation device according to claim 5. 10. The method according to claim 9, wherein a slit is provided in a predetermined area of the conductive foil. 11. The method according to claim 1, wherein the separation groove selectively formed in the conductive foil is formed by chemical or physical etching. 12. The light irradiation apparatus according to claim 1, wherein the conductive film formed on the conductive foil uses the conductive film as a part of a mask when forming the separation groove. Production method. 13. The method according to claim 1, further comprising a step of forming a photoresist film in a predetermined region on the conductive path before the step of fixing the optical semiconductor element, wherein the photoresist film is used as a mask when forming the separation groove. The method for manufacturing a light irradiation device according to claim 1, wherein: 14. The optical semiconductor device according to claim 1, wherein a cathode electrode or an anode electrode on a back surface is electrically connected to the first conductive electrode formed of the conductive path, and the second conductive electrode also formed of the conductive path has a front surface. The method according to claim 1, wherein the anode electrode or the cathode electrode is electrically connected. 15. The light irradiation device according to claim 1, wherein the conductive foil is made of any one of copper, aluminum, iron-nickel, copper-aluminum, and aluminum-copper-aluminum. Production method. 16. The conductive film is made of nickel, gold, silver,
The method for manufacturing a light irradiation device according to claim 3, wherein the light irradiation device is formed by plating with one of palladium and aluminum. 17. The method according to claim 2, wherein the connection unit is formed by wire bonding. 18. The method according to claim 1, wherein the resin capable of transmitting light is sealed by transfer molding using a mold. 19. The method for manufacturing a light irradiation device according to claim 8, wherein the individual light irradiation devices sealed with a resin capable of transmitting light are separated by dicing or pressing. . 20. The method according to claim 2, wherein the conductive foil not provided with the slit is used at least in a resin pouring direction.