JP2013145921A - Light emitting device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin and small light emitting device which achieves high reliability.SOLUTION: A light emitting device includes: a light emitting element; multiple conductive layers where the light emitting element is placed or electrically connected with the light emitting element; and a light transmissivity insulation member sealing the light emitting element and having the conductive layers on a bottom surface. Each conductive layer has a protruding part at a part of its side surface. Specifically, the protruding part is located on the plane side of the conductive layer and a corner of the plane side is rounded. The conductive layer has a recessed part where the light emitting element is housed and also has a color conversion member, which converts a wavelength of light from the light emitting element, in the recessed part.

Description

  The present invention relates to a light emitting device used for lighting, automobiles, industrial equipment, general consumer equipment (displays, etc.) and a method for manufacturing the same, and more particularly to a thin / small surface mount type light emitting device.

  As a conventional surface mount type light emitting device, for example, a light emitting element is electrically connected to a pair of conductive members patterned on the surface of an insulating substrate such as glass epoxy or ceramics, and the vicinity of the light emitting element is translucent. A light emitting device sealed with an insulating member can be given.

The light emitting device as described above has a high manufacturing cost because of a large number of manufacturing processes and parts. Further, since heat generated from the light emitting element is radiated to the outside through a substrate made of an insulating material having low thermal conductivity, sufficient heat dissipation cannot be obtained, and a high output type light emitting element is used. It was not possible to apply it when it was used or when continuous use was desired. Further, if the insulating substrate is made thinner, the heat dissipation path can be shortened, but the strength of the conductive member formed on the upper surface cannot be ensured. As described above, it has been difficult to achieve both improvement in heat dissipation of the light emitting device and realization of thinness and miniaturization.

On the other hand, there is disclosed a light-emitting device that does not have the above-described substrate and has a pair of electrodes fixed to the bottom surface of a translucent resin that seals a light-emitting element or the like.

JP 2001-203396 A

  However, since the side surface of the electrode embedded in the resin is substantially parallel to the embedding direction, the electrode is removed from the resin by an impact received during a mounting process on a circuit board or use after mounting. It will be detached and the integrity of the light emitting device will be lost. In particular, in the case of a light-emitting device, since the insulating member that seals the light-emitting element must have translucency, the above problem occurs because the mechanical strength cannot be increased by adding a filler or the like. The probability is very high.

  In the above publication, a specific method for manufacturing a light emitting device is not specified.

  Accordingly, an object of the present invention is to provide a highly reliable thin and miniaturized light emitting device and a manufacturing method thereof.

  In order to solve the above-mentioned problems, the present inventor has intensively studied and as a result, the present invention has been completed.

  The light-emitting device of the present invention includes a light-emitting element, a plurality of conductive layers on which the light-emitting element is mounted or electrically connected to the light-emitting element, the light-emitting element is sealed, and the conductive layer is disposed on a bottom surface. A light-transmitting insulating member, and the conductive layer has a protrusion on a part of a side surface.

The protrusion is preferably on the plane side of the conductive layer.

The planar side corners of the protrusions are preferably rounded.

The conductive layer may have a concave portion in which the light emitting element is accommodated, and a color conversion member capable of wavelength-converting light from the light emitting element in the concave portion.

The method for manufacturing a light-emitting device of the present invention includes a light-emitting element, a plurality of conductive layers on which the light-emitting element is mounted or electrically connected to the light-emitting element, and sealing the light-emitting element. A translucent insulating member having a conductive layer on the bottom surface, and the conductive layer is a method for manufacturing a light emitting device having a protrusion on a part of the side surface, and a resist is applied to the plane of the metal matrix material, A first step of removing a part of the resist to form an opening, a second step of forming a conductive layer by attaching conductive particles in the opening, and a plane of the resist from the opening. A third step of attaching the conductive particles to form a protruding portion of the conductive layer, and after removing the resist, a light-emitting element is placed on the plane of the conductive layer and electrically connected to form a translucent A fourth step of covering with an insulating member; From the bottom surface and the bottom surface of the translucent insulating member of the conductive layer and the fifth step of peeling the metal matrix material, and having a.

In the first step, a recess capable of accommodating the light emitting element in advance may be formed on the plane of the metal matrix material.

In the first step, the angle formed by the bottom surface and the side surface of the concave portion of the metal matrix material is preferably an obtuse angle.

In the third step, the light emitting element is preferably flip-chip mounted on a plane of the conductive layer via an anisotropic conductive material.

  Since the light-emitting device of the present invention is configured as described above, the reliability of a thin and small-sized light-emitting device capable of reducing costs can be improved.

Hereinafter, the best mode for carrying out the present invention will be described with reference to the drawings. However, the form shown below illustrates the light emitting device for embodying the technical idea of the present invention, and the present invention does not limit the light emitting device to the following. Further, the present specification by no means specifies the members shown in the claims to the members of the embodiments. The dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the description unless otherwise specified. It is just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Further, in the following description, the same name and reference sign indicate the same or the same members, and detailed description will be omitted as appropriate. Furthermore, each element constituting the present invention may be configured such that a plurality of elements are constituted by the same member and the plurality of elements are shared by one member, and conversely, the function of one member is constituted by a plurality of members. It can also be realized by sharing.

<Light emitting device>
A light-emitting device according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1A is a schematic plan view showing the light emitting device according to the embodiment, and FIG. 1B is a schematic cross-sectional view taken along the line AA of FIG.

In FIG. 1A and FIG. 1B, the light emitting element 1 and one of the conductive elements on which the light emitting element 1 is mounted and electrically connected to one electrode of the light emitting element 1 by a wire 3. A layer 2a, the other conductive layer 2b electrically connected to the other electrode of the light emitting element 1 by a wire 3, and a translucent insulating member 4 for sealing them, and the translucent property The one conductive layer 2 a and the other conductive layer 2 b are arranged on the bottom surface of the insulating member 4 so as to be separated from each other. Each of the one conductive layer 2a and the other conductive layer 2b has protrusions 2c and 2d on the side surfaces. Hereinafter, each structure of this Embodiment is explained in full detail.

(Light emitting element 1)
The light emitting element 1 in this embodiment can be a light source of a light emitting device such as a light emitting diode or a laser diode. In the light-emitting device of this embodiment, the light-emitting element 1 and a light-receiving element, and a protective element (for example, a Zener diode or a capacitor) that protects the semiconductor elements from destruction due to overvoltage, or a combination thereof may be mounted. it can.

An LED chip will be described as an example of the light emitting element 1. Examples of the semiconductor light-emitting element that constitutes the LED chip include those using various semiconductors such as ZnSe and GaN. However, in the case of a light-emitting device having a fluorescent material, the short-circuit that can efficiently excite the fluorescent material. wavelength capable of emitting nitride semiconductor _{(in X Al Y Ga 1-} X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is preferably exemplified. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal. For example, the LED chip can be a light emitting element that outputs not only visible light but also ultraviolet rays and infrared rays.

In the light-emitting device of this embodiment, the light-emitting element 1 has a pair of positive and negative electrodes on the same surface side, but is not limited to this, and each of the light-emitting elements 1 has positive and negative surfaces. And those with negative electrodes can also be applied.

(Conductive layers 2a and 2b)
The plurality of conductive layers 2a and 2b used in the present embodiment are not particularly limited as long as the materials have good adhesion, heat dissipation, and conductivity with the translucent insulating member, and are configured with various materials. can do.

In particular, in the case of a thin and miniaturized light emitting device, the strength of the conductive layer is preferably 450 Hv to 550 Hv because strength at the time of bonding with the circuit board is required. The thermal conductivity of the conductive ^{layer, 0.01cal / (S) (cm} 2) is preferably (° C. / cm) or more, more preferably ^{0.5cal / (S) (cm 2} ) (℃ / cm)). The electrical resistance is preferably 300 μΩ · cm or less, more preferably 3 μΩ · cm or less.

Specific materials used for these conductive layers include plating layers made of fine particles of refractory metals such as Cu, Au, Ni, W, Mo, Mn, and Ta. Among these refractory metals, in particular, Ni has superior tensile strength and strength strength, high modulus of elasticity and high strength even at high temperatures, and low thermal expansion coefficient among metals compared to other metals. Has physical properties. Such a refractory metal is suitable as a material for mounting a semiconductor light emitting element such as an LED or LD that generates a large amount of heat. Further, it is preferable to provide a conductive film having a glossiness of 90 or more on the surface of the conductive layer, whereby a conductive layer having a light reflection function can be obtained. Here, the glossiness in this specification refers to a glass surface having a refractive index of 1.567 and a glossiness of 0, based on JIS standards, with a specular reflectance of 10% when light from a light emitting element is incident at 60 °. And measured with a VSR300A minute surface color difference meter manufactured by Nippon Denshoku Industries Co., Ltd. On the other hand, a light-emitting device capable of emitting light over the entire surface using a transparent electrode material such as ITO or IZO can also be provided.

(Protrusions 2c and 2d)
The conductive layers 2a and 2b in the present embodiment have protrusions 2c and 2d on the side surfaces. Thereby, the adhesiveness of conductive layer 2a * 2b and the translucent insulating member 4 can be improved. When an impact is applied to the light-emitting device mounted on the circuit board, the light-emitting device cannot be integrated simply by simply fixing the thin conductive layer to the back surface of the translucent insulating member. In addition, it is conceivable to improve the adhesion to the light-transmitting insulating member by roughening the side surface of the conductive layer by etching or the like, but since a plurality of conductive layers are arranged apart from each other, they face each other from the light emitting element. If the side surface of the conductive layer is a rough surface, there is a high possibility that the light applied to the root surface will be confined in the insulating member in the separated portion. In addition, as a method for increasing the mechanical strength of the translucent insulating member, a diffusing agent such as titanium oxide, zirconia oxide, aluminum oxide, and silicon oxide is added, or a thickener such as fumed silica or fürde aluminum is added. Alternatively, there is a method of adding a pigment or the like, but in order to obtain a preferable strength, it must be contained in a large amount, and the translucency is lowered. Thus, it was difficult to increase the mechanical strength of the sealing member itself while maintaining the light extraction efficiency. Therefore, in the present invention, the integrity of the light emitting device as a whole is enhanced by forming a conductive member that is cross-linked with most of the basic components of the light emitting device into a shape that is preferable in terms of optical characteristics and adhesion.

The corners of the projecting portions 2c and 2d are preferably rounded. Thereby, it can suppress that the light irradiated from the light emitting element to the protrusion part is closed by the protrusion part lower part. The position of the projecting portion is not particularly limited, but is preferably on the plane side of the conductive layer, which can reduce light loss due to the separated portion of the conductive layer facing each other. Furthermore, it is preferable that the corners on the flat side of the protrusions are rounded, and further, the side surfaces of the protrusions are preferably parabolic from the flat surface to the bottom surface. Can be obtained. Here, in this specification, a plane means a surface corresponding to the light extraction direction of the light emitting device, and a surface facing the plane is called a bottom surface.

Further, the thickness of the protruding portions 2c and 2d is preferably 10% to 70% of the total thickness of each conductive layer, more preferably 30% to 60%, and still more preferably 40% to 60%. preferable. In addition, the distance between the protruding portion 2c on the inside of the light emitting device of one conductive layer 2a and the protruding portion 2d on the inside of the light emitting device of the other conductive layer 2b adjacent to the one conductive layer 2a is in consideration of productivity. It is preferable that it is 50 micrometers-1 mm. Furthermore, when considering the light extraction efficiency, 50 μm to 300 μm are preferable, and 50 μm to 100 μm are more preferable.

As shown in FIG. 3, in the light emitting device of another embodiment, a concave portion having a flat bottom surface is formed at one end of one conductive layer 2a, and the light emitting element 1 is placed in the concave portion. . The bottom surface of the other end of the one conductive layer 2a has a convex shape so as to be positioned substantially parallel to the bottom surface of the recess. The other conductive layer 2b has one end facing the one end of the one conductive layer 2a in substantially the same plane and the other end positioned substantially in the same plane as the other end of the one conductive layer 2a. Yes. With such a structure, the mechanical strength of the light-emitting device can be increased without reinforcing the back surface of the conductive layer with another member. Furthermore, since there are many fulcrums on the mounting surface, mounting accuracy is improved. The conductive layer preferably has a substantially uniform thickness, which can further improve the mechanical strength.

(Die bond member 5)
In the present embodiment, the light-emitting element 1 is die-bonded to the upper surface of one conductive layer 2a that is a substantially central portion of the light-emitting device, and each electrode of the light-emitting element 1 includes the one conductive layer 2a and the other conductive layer. 2b and each wire 3 are electrically connected.

The die bond member 5 in this embodiment is a member for fixing the light emitting element 1 and the conductive layer 2a. For example, conventionally used die bond members such as thermosetting resins can be used, and specific examples include epoxy resins, acrylic resins, and imide resins. Moreover, in order to adjust the thermal expansion coefficient of the die-bonding member 5, these resins can also contain a filler. Thereby, it can suppress that a light emitting element peels from the conductive layer 2a. In addition, when the light-emitting element 1 is die-bonded and electrically connected to the conductive layer 2a or when high heat dissipation is required, it is preferable to use Ag paste, carbon paste, ITO paste, metal bumps, or the like. In the case of many power-based light-emitting devices, it is preferable to use Au—Sn-based eutectic solder that has a high melting point and therefore does not change its structural structure at high temperatures and has little deterioration in mechanical properties. However, when a member having a high reflectance with respect to the light from the light emitting element 1 is used as the die bond member 5, the light is absorbed by the die bond member 5 or the light is confined in the light emitting element 1. The occupation ratio of the die bond member 5 with respect to the bottom surface of the element 1 is preferably 5% to 95%, more preferably 20% to 70%, and further preferably 20% to 50%. When it is less than 5%, the heat dissipation and mounting properties of the light-emitting element 1 are degraded. On the other hand, if it is larger than 95%, the light extraction efficiency of the light-emitting element 1 is reduced as described above.

(Wire 3)
In this embodiment, the wire 3 that connects the electrode of the light-emitting element 1 and the conductive layers 2a and 2b is required to have good ohmic properties, mechanical connectivity, electrical conductivity, and thermal conductivity with the conductive layers 2a and 2b. It is done. Preferably ^{0.01cal / (s) (cm 2} ) (℃ / cm) or higher as heat conductivity, and more preferably ^{0.5cal / (s) (cm 2} ) (℃ / cm) or more. In consideration of workability and the like, the diameter of the wire 3 is preferably Φ10 μm to Φ45 μm. Specific examples of the wire material include conductive wires using metals such as Au, Cu, Pt, and Al, and alloys thereof. In the present embodiment, the wire is preferably bonded to the electrode of the light-emitting element 1 from the conductive layers 2a and 2b side (BSOB (Bond Stitch Ball)), thereby forming a low super loop at a high speed and a narrow pitch. Thus, an ultra-thin and miniaturized light emitting device can be realized. In addition, since the stress point of the wire is one, a highly reliable light emitting device can be obtained.

(Translucent insulating member 4, color conversion member 6)
The light emitting device of the present embodiment is for the purpose of protecting the mounted light emitting element 1 and wire 3 from dust, moisture, external force, etc., integrating these members, and improving the light extraction efficiency of the light emitting element 1. It is sealed with a translucent insulating member 4. The material of the translucent insulating member 4 can be selected from translucent resins such as epoxy resin, silicone resin, and urea resin, and translucent members such as glass. In addition, such a translucent insulating member 4 may include a fluorescent substance that emits light having a different wavelength by absorbing at least a part of light from the light emitting element, so that the color conversion member 6 can be obtained. In this case, it is preferable to use a silicone resin or a modified silicone resin that is excellent in heat resistance and light resistance as the translucent insulating member 4 and hardly undergoes color deterioration even when exposed to short wavelength high energy light including ultraviolet rays. Generation of color misregistration and color unevenness is suppressed. Further, even when the thermal expansion and thermal contraction of the covering member such as soldering are repeated, the wire 3 connecting the light emitting element 1 and the conductive layers 2a and 2b is disconnected, and the die bonding member 5 is peeled off. Occurrence can be suppressed. The fluorescent material that can be used in this embodiment converts light from the light emitting element, and it is more efficient to convert light from the light emitting element to a longer wavelength. When the light from the light emitting element is high energy short wavelength visible light, a YAG: Ce phosphor or a Ca ₂ Si ₅ N ₈ phosphor, which is a kind of aluminum oxide phosphor, is preferably used. In particular, the YAG: Ce phosphor absorbs part of the blue light from the LED chip depending on its content and emits yellow light that is a complementary color. Can be formed relatively easily.

The fluorescent material that can be used in this embodiment converts light from the light emitting element, and it is more efficient to convert light from the light emitting element to a longer wavelength. When the light from the light-emitting element is short-wavelength visible light with high energy, YAG: Ce, which is a kind of aluminum oxide phosphor, is preferably used. In particular, the YAG: Ce phosphor absorbs part of the blue light from the LED chip depending on its content and emits yellow light that is a complementary color. Can be formed relatively easily.

<Method for manufacturing light emitting device>
The method for manufacturing a light emitting device according to the present embodiment includes a first step in which a resist is applied to a plane of a metal matrix material, a part of the resist is removed to form an opening, and conductive particles are formed in the opening. A second step of forming a conductive layer by adhering, a third step of subsequently forming a protruding portion of the conductive layer by attaching the conductive particles from the opening to the plane of the resist, and removing the resist After that, a fourth step of placing a light emitting element on the plane of the conductive layer, electrically connecting it, and covering it with a translucent insulating member, a bottom surface of the conductive layer, and the translucent insulating member And a fifth step of peeling the metal matrix material from the bottom surface. Hereinafter, each process for manufacturing the light emitting device of the present embodiment will be described in detail.

(First step)
In the light emitting device of the present embodiment, all the constituent members are formed using a metal matrix material as a backing material. Thereby, a thin and highly accurate light-emitting device can be obtained.

The metal matrix material is a foil bonded to a thin conductive layer, and each component of the light emitting device is attached to the plane of the metal matrix material to ensure the rigidity of the entire light emitting device at the time of manufacture. Is completed, the metal matrix material is peeled off and removed. The material of the metal matrix material that can be peeled off is not particularly limited, but it is particularly preferable to use metals such as Fe, Mo, W, and filament stainless steel, which are metals having a body-centered cubic structure. Thereby, it becomes easy to control the peeling strength between the metal matrix and the conductive layer laminated on the upper surface, and the productivity of the light emitting device can be increased.

The metal matrix material as described above has a release layer that can be peeled off from the conductive layers 2a and 2b and the translucent insulating member 4 laminated in a plane. A metal intermediate layer can be used as such a release layer. The metal intermediate layer is preferably made of a material that can function as a barrier in an etching process when a resist is patterned on the upper surface. In addition, a weak bonding layer is preferably formed at the interface between the metal matrix material and the metal intermediate layer. Moreover, it is preferable that the peeling strength between the laminated conductive layer and the metal matrix material is in the range of 0.01 to 0.8 N / mm. If it is less than 0.01 N / mm, the conductive layer may be partially peeled off during handling such as an etching process or a conveyance process. Moreover, when it exceeds 0.8 N / mm, the formed conductive layer may not be peeled off from the metal matrix material in the peeling step after forming each constituent member of the light emitting device. In the present invention, the metal intermediate layer can be made of Cu, Ti, Ag, Sn, Ni, Zn, or an alloy containing any one of these metals as a main component. In particular, a material containing Ti as a main component preferably contains hydrogen, which makes the metal intermediate layer itself brittle and easily fragile, and has an appropriate peel strength. A material containing Ti as a main component preferably contains 0.5 mass% to 5 mass% of hydrogen, and a material containing Zr as a main component may contain 0.02 mass% to 2.5 mass% of hydrogen. preferable. If the amount of hydrogen is less than the range, the embrittlement is insufficient, and there is a large variation in the peel strength when the conductive layer and the metal matrix material are peeled off. There is a possibility that the conductive layer may be peeled off in the process of attaching each constituent member and the transporting process. Here, in this specification, having a main component means having 50 mass or more of the corresponding material.

Further, a weak bonding layer may be used at the interface between the metal matrix material and the metal intermediate layer. The weak bonding layer is preferably an oxygen concentrated layer. Such an oxygen enriched layer is fragile. Therefore, the peeling strength can be controlled by forming such an oxygen-enriched layer partially at the interface between the metal matrix material and the metal intermediate layer in advance. Here, the oxygen-enriched layer means a layer having a higher oxygen content than other metal intermediate layer portions.

By patterning a resist on the metal base material that can be peeled thus configured, a planar opening of a desired conductive layer is formed. The side surface of the resist pattern is preferably substantially perpendicular to the metal matrix material. The pitch between the openings is adjusted according to the protrusion length of the protrusion of the conductive layer of the light emitting device.

(Second process, third process)
Next, a third step of forming a conductive layer by attaching conductive particles in the opening, and subsequently attaching the conductive particles from within the opening over the plane of the resist to form a protruding portion of the conductive layer; Conductive particles are applied from above the resist pattern. At this time, the shape of the protruding portions of the conductive layers 2a and 2b can be adjusted by adjusting the coating amount. The stack height of the conductive particles is preferably 1.3 to 2.5 times the thickness of the resist pattern, more preferably 1.5 to 2.3 times, and even more preferably 1.8 to 2 times. It is preferably 0.0 times. Here, as a method for laminating the conductive particles, vacuum deposition, sputtering, ion plating, electro-deposition, electro-deposition, or the like can be used. In particular, vacuum vapor deposition and electro vapor deposition are preferable because of high film formation speed. When an ultra-thin conductive layer is formed, a good quality film can be obtained using sputtering, ion plating, or the like. Thus, after laminating the conductive particles, the conductive layers 2a and 2b can be formed by removing the resist pattern.

(Fourth process)
Next, the light emitting element is mounted on the plane of the conductive layer and is electrically connected, and the light-transmitting insulating member 4 is applied and cured so as to cover these constituent members.

(Fifth process)
Next, only the metal matrix material is wound on a roll, and the metal matrix material is peeled off from the conductive layers 2 a and 2 b and the translucent insulating member 4. The metal intermediate layer remaining on the bottom surface of the obtained light-emitting device is used as a reflective member or a bonding accelerator depending on the purpose, or the metal intermediate layer that hardly etches the conductive layers 2a and 2b and the translucent insulating member by selective etching. It removes using the etching liquid. In particular, when the conductive layers 2a and 2b are made of a material having high thermal conductivity, the metal intermediate layer can be removed without excessively etching the conductive layers 2a and 2b.

Examples according to the present invention will be described in detail below. Needless to say, the present invention is not limited to the following examples.

Example 1
An SUS430 band material having a thickness of 60 μm is used as the metal matrix material, an intermediate layer made of Ti is formed on the plane of the metal matrix material, and heat treatment is performed in a hydrogen gas atmosphere. Next, a resist having a thickness of 70 μm is formed and patterned so that openings of □ 0.5 mm × 0.2 mm and openings of □ 0.5 mm × 1.0 mm are arranged in parallel at a pitch of 0.2 mm.

Next, an Au / Ni layer is formed in the opening. The upper surface of the Ni layer is formed to be lower than the plane of the resist. Subsequently, an Au layer is formed so as to exceed the resist plane. Then, Ag plating is performed on the outermost Au layer. Finally, by removing the resist, it is possible to obtain the conductive layers 2a and 2b having the protruding portions 2c and 2d having a thickness and a protruding length of 50 μm, respectively.

Subsequently, the light emitting element 1 is electrically connected to the pair of conductive layers 2a and 2b. Specifically, a gallium nitride compound semiconductor having a light emission peak wavelength of about 460 nm and having positive and negative electrodes on the same surface is used as the light-emitting element 1, and is fixed on one conductive layer 2 a with a die bond resin 5. Next, Au bumps are formed on the pair of electrodes of the light emitting element 1, and then wire bonding is performed from the one conductive layer 2a to the Au bumps (BSOB). And the silicone resin 4 is apply | coated and hardened so that these each structural member may be covered.

Next, only the metal matrix material is wound on a roll and peeled off from the conductive layers 2 a and 2 b and the silicone resin 4. By dicing the obtained continuous light emitting device with a silicone resin portion on the outer peripheral portion of the protruding portion of the conductive layer, the light emitting device shown in FIG. 1 can be obtained.

The light-emitting device thus obtained is 1.6 mm × 0.8 mm × 0.2 mm, and is ultra-thin and downsized, and has excellent reliability.

(Example 2)
□ 0.5 mm × 0.2 mm openings, □ 0.5 mm × 1.0 mm openings, and □ 0.5 mm × 0.2 mm openings are arranged in parallel at a pitch of 0.2 mm. The light emitting device shown in FIG. 2 is manufactured in the same manner as in Example 1 except that one conductive layer for wire bonding and one conductive layer for mounting a light emitting element are used in one light emitting device. Get the device. The light-emitting device obtained in this way is more excellent in heat dissipation than FIG.

(Example 3)
On the metal matrix material, a plurality of recesses having a depth of 80 μm are formed in advance by etching, and a conductive layer 2 a having a recess capable of accommodating the light emitting element 1 is formed. Next, the light-emitting element 1 is placed in the recess, and the electrodes of the light-emitting element 1 and the conductive layers 2a and 2b are electrically connected by wires 3, respectively, and then the light-emitting element is placed in the recess. A light-transmitting insulating member 6 containing a fluorescent material that can absorb light from the light and convert it to a long wavelength is filled. Specifically, a mixture obtained by mixing and stirring a silicone resin and (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce _0.03 phosphor so as to have a weight ratio of 100: 15 is filled in the recess. Leave for 4 hours to allow the fluorescent material to settle. When the filling amount protrudes from the center, the light collecting property can be enhanced.
The silicone resin is cured at a process of 50 ° C. for 3 hours, while raising the temperature from 50 ° C. to 150 ° C. for 1 hour and 150 ° C. for 4 hours, thereby forming the color conversion member 6.

Next, the translucent insulating member 4 is formed in a shape that can collect the light from the light emitting element 1.
Specifically, it can be formed by pressure molding or transfer molding. By dicing the thus obtained light emitting device at the silicone resin portion on the outer peripheral portion of the protruding portion of the conductive layer, a light emitting device having a high light collection rate as shown in FIG. 3 can be obtained.

Example 4
Conductive layers 2a and 2b are formed in the same manner as in Example 1 except that the resist is patterned so that the openings are arranged in parallel at a pitch of 0.2 mm of □ 0.5 mm × 0.2 mm. Next, the light emitting element 1 and the conductive layers 2a and 2b are flip-chip mounted via an anisotropic conductive member.

In the present embodiment, the anisotropic conductive member is formed by adding 5 vol% of conductive particles obtained by forming a Ni thin film on the plastic particle surface by electroless plating and then substituting the Au thin film into the silicone resin. However, the present invention is not limited to this, and there is no particular limitation as long as the conductive particles are provided in an adhesive made of an organic or inorganic material having thermoplasticity or thermosetting property. In addition, it is preferable to use conductive particles that can efficiently reflect light from the light-emitting element 1. Specific conductive particles that can be used include Ni particles and particles having a metal coat made of Ni, Au, or the like on the surface of particles such as plastic and silica. In addition, the content of the conductive particles is preferably 0.3 vol% to 1.2 vol% with respect to the adhesive, and thus, conduction can be easily achieved by heating and pressurization when the light emitting element 1 is placed. Can do.

Finally, by dicing at the central portion of the conductive layer, an ultra-thin and miniaturized light emitting device as shown in FIG. 4 can be obtained. Here, in each embodiment, the dicing line is diced at the silicone resin portion which is the outer peripheral portion of the conductive layer, as in the first to third embodiments, or according to the size of the desired light emitting device. As shown in FIG. 4, dicing on the conductive layer can be selected.

  The present invention is applicable to various indicators, optical sensors, displays, photocouplers, backlight light sources, optical printer heads, and the like as light emitting devices equipped with light emitting elements such as light emitting diodes and semiconductor lasers.

FIG. 1A is a schematic plan view showing the light-emitting device according to the present embodiment, and FIG. 1B is a schematic cross-sectional view taken along the line AA in FIG. FIG. 2A is a schematic plan view showing the light-emitting device according to the present embodiment, and FIG. 2B is a schematic cross-sectional view taken along the line AA in FIG. FIG. 3A is a schematic plan view showing the light-emitting device according to the present embodiment, and FIG. 3B is a schematic cross-sectional view taken along the line AA in FIG. FIG. 4A is a schematic plan view showing the light emitting device according to the present embodiment, and FIG. 4B is a schematic cross-sectional view taken along the line AA in FIG.

DESCRIPTION OF SYMBOLS 1 Light emitting element 2a * 2b Conductive layer 2c * 2d Protrusion part 3 Wire 4 Translucent insulating member 5 Die bond member 6 Color conversion member 7 Anisotropic conductive member

Claims (1)

A light-emitting element, a plurality of conductive layers on which the light-emitting element is mounted or electrically connected to the light-emitting element, a translucent insulating member that seals the light-emitting element and has the conductive layer on the bottom surface And the conductive layer has a protrusion on a part of the side surface.

Images