JP2011035187A - Light emitting device, and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin light emitting device high in light extraction efficiency. <P>SOLUTION: This method of manufacturing a light emitting device includes: a first process of forming, on a supporting substrate made of stainless steel, a plurality of conductive members each having the lowest layer including a first region containing Au and a second region containing a metallic member having a diffusion coefficient with respect to a metal in the stainless steel smaller than that of Au; a second process of forming a base body made of a light-blocking resin on the supporting substrate between the conductive members; a third process of bonding a light emitting element on an upper surface of the conductive member through an adhesive member; a fourth process of covering the light emitting element with a translucent sealing member; and a fifth process of removing the supporting substrate and thereafter individually separating the light emitting devices. Thereby, this thin light emitting device high in light extraction efficiency can be provided. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a light-emitting device that can be used for a display device, a lighting fixture, a display, a backlight light source of a liquid crystal display, and the like. Regarding the method.

  In recent years, along with the downsizing and weight reduction of electronic devices, various types of light emitting devices such as light emitting devices (light emitting diodes) and light receiving devices (CCD) mounted thereon have been developed. In these light emitting devices, for example, a light emitting element is placed on a double-sided through-hole printed board on which a pair of metal conductor patterns formed on both sides of an insulating substrate is formed, and light is emitted from the metal conductor pattern using a wire or the like. It has a structure for electrically connecting the element.

  However, it is essential for such a light-emitting device to use a double-sided through-hole printed circuit board, and since this double-sided through-hole printed circuit board has a thickness of at least about 0.1 mm, the surface-mount type light-emitting device is thoroughly implemented. This is a factor that hinders the reduction in thickness. Therefore, a light emitting device having a structure that does not use such a printed circuit board has been developed (for example, Patent Document 1).

JP 2005-79329 A

  The light-emitting device disclosed in Patent Document 1 forms a thin metal film on a substrate by vapor deposition or the like, uses this as an electrode, and seals it with a light-transmitting resin together with a light-emitting element. Thinning is possible compared to the device.

  However, since only the translucent resin is used, the light escapes from the light emitting element in the lower surface direction, and the light extraction efficiency tends to be lowered. Although a structure in which a mortar-shaped metal film is provided to reflect light is disclosed, in order to provide such a metal film, it is necessary to provide unevenness on the substrate. Then, since the light emitting device is miniaturized, the unevenness becomes extremely fine, which makes it difficult to process, and the uneven structure easily breaks when the substrate is peeled off, resulting in a decrease in yield. Cheap. Moreover, when using for a display etc., when only translucent resin is used, contrast will deteriorate easily.

  In recent years, there has been a demand for higher output and the output of the light emitting element tends to be improved. However, the amount of heat generated when obtaining such high output light emission is also increasing. Therefore, the heat resistance of each member which comprises a light-emitting device is requested | required.

  In order to solve the above-described problems, a method for manufacturing a light emitting device according to the present invention includes a first region having Au and a metal member having a diffusion coefficient smaller than that of Au on a support substrate made of stainless steel. A first step of forming a plurality of conductive members having a lowermost layer having a second region, and a second step of forming a base made of a light-shielding resin on a support substrate between the conductive members; A third step of bonding the light emitting element to the upper surface of the conductive member through an adhesive member; a fourth step of covering the light emitting element with a light-transmitting sealing member; And a fifth step of singulating. Accordingly, a small and thin light emitting device can be formed with high yield.

  The light-emitting device of the present invention is a light-emitting device having a light-emitting element, a conductive member to which the light-emitting element is bonded via an adhesive member on an upper surface, and a base that holds the lower surface of the conductive member so as to be exposed. The lower surface of the conductive member has a first region having Au and a plurality of second regions including a metal member having a diffusion coefficient smaller than that of the metal in stainless steel. Accordingly, a light-emitting device that is small and thin and has excellent heat resistance can be obtained.

  According to the present invention, a small and thin light-emitting device can be easily formed with high yield. In addition, even a thin light-emitting device can prevent light from the light-emitting element from leaking from the lower surface side, so that a light-emitting device with improved light extraction efficiency and a light-emitting device with improved contrast are available. can get. In addition, a light emitting device having excellent heat resistance can be easily obtained.

FIG. 1A is a perspective view showing the whole and the inside of a light emitting device according to the present invention. 1B is a cross-sectional view and a partially enlarged view of the light emitting device according to FIG. 1A taken along the line A-A ′. 1C is a bottom view and a partially enlarged view of the light emitting device according to FIG. 1A. FIG. 1D is a partially enlarged view of a conductive member of the light emitting device according to the present invention. FIG. 1E is a process diagram illustrating a method for manufacturing a light-emitting device according to the present invention. FIG. 1F is a process diagram illustrating a method for manufacturing a light-emitting device according to the present invention. FIG. 2A is a process diagram illustrating a method for manufacturing a light-emitting device according to the present invention. FIG. 2B is a process diagram illustrating a method for manufacturing the light emitting device according to the present invention. FIG. 3A is a process diagram illustrating a method for manufacturing a light emitting device according to the present invention. FIG. 3B is a process diagram illustrating a method for manufacturing the light emitting device according to the present invention. FIG. 3C is a process diagram illustrating a method for manufacturing the light emitting device according to the present invention. FIG. 3D is a cross-sectional view and a partially enlarged view of the light emitting device according to the present invention.

  The best mode for carrying out the present invention will be described below with reference to the drawings. However, the form shown below illustrates the light-emitting device and the manufacturing method for embodying the technical idea of the present invention, and is not limited to the following.

  Moreover, this specification does not limit the member shown by the claim to the member of embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the extent that there is no limited description, It is just an example. It should be noted that the size and positional relationship of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate.

<Embodiment 1>
A light-emitting device 100 of the present embodiment is shown in FIGS. 1A to 1C. 1A is a perspective view of the light emitting device 100, FIG. 1B is a cross-sectional view taken along the line AA ′ of the light emitting device 100 shown in FIG. 1A, and FIG. 1C is a bottom view of the light emitting device 100 shown in FIG. Show.

  In this embodiment mode, the light-emitting device 100 includes a light-emitting element 102, a pair of conductive members 101 having an upper surface that is electrically connected to the light-emitting element 102, and a base 103 that is held in contact with an outer edge of the conductive member 101. Have. The base 103 is a resin that can block light from the light emitting element 102 by adding various light-shielding fillers and the like, and has a recess S composed of a bottom surface portion 103a and a side wall 103b. On the bottom surface of the recess S, a part of the upper surface of the pair of conductive members 101 is exposed. The lower surface of the conductive member 101 is exposed from the lower surface (back surface) of the base body 103. The light emitting element 102 and the conductive member 101 are electrically connected via a conductive wire 105, and the sealing member 106 is provided in the recess S so as to cover these electronic components. In the present invention, the lower surface of the conductive member 101 includes a first region 101a having Au and a second region 101b including a metal member having a diffusion coefficient smaller than that of the metal in stainless steel. To do.

  Such a light emitting device 100 can be obtained by the following manufacturing method. FIG. 1E and FIG. 1F are diagrams showing a process of forming a light emitting device assembly 1000, and the light emitting device 100 shown in FIG. 1A can be obtained by cutting the assembly 1000 into individual pieces.

1. First Step First, as shown in FIG. 1E (a), a flat support substrate 1070 made of stainless steel is prepared. A resist 1080 is applied as a protective film on the upper surface of the support substrate. The thickness of the conductive member formed later can be adjusted by the thickness of the resist 1080. Here, the resist 1080 is provided only on the upper surface (surface on which the conductive member is formed) of the support substrate 1070, but it may be formed on the lower surface (opposite surface). Thereby, it can prevent that a conductive member is formed in the lower surface side of a support substrate by the below-mentioned plating.

  The protective film (resist) to be used may be either a positive type or a negative type in the case of a resist formed by photolithography. Although a method using a positive resist is described here, a positive resist and a negative resist may be used in combination. In addition, a method of attaching a resist formed by screen printing or a sheet-like resist can be used.

  After the applied resist is dried, a mask 1100 having an opening is disposed directly or indirectly on the resist, and exposure is performed by irradiating ultraviolet rays as indicated by arrows in the drawing. For the ultraviolet rays used here, a wavelength suitable for the sensitivity of the protective film 1080 can be selected. Thereafter, a protective film 1080 having an opening K is formed as shown in FIG. Here, if necessary, acid activation treatment or the like may be performed.

  Next, a metal member constituting the second region of the lowermost layer (lower surface) of the conductive member, that is, a metal member having a diffusion coefficient smaller than that of the metal in stainless steel is formed on the support substrate exposed in the opening. To do. Here, it is necessary to cover a portion to be a first region to be formed later with a protective film, and a process similar to that shown in FIGS. 1E (a) and 1E (b) is performed again to form a protective film such as a resist. After forming the opening, a metal member is formed by a method such as sputtering, vapor deposition, or plating to form the second region 1010b.

  For example, in FIG. 1E (c), a mask (not shown) having a smaller opening than a mask 1100 having a relatively large opening used in FIG. 1E (a) is used to form a metal member such as Ti or Pt. The second region 1010b is formed. Depending on the shape of the opening of the protective film, the shape as shown in FIG. 1C (a) or FIG. 1C (b) can be obtained. In FIG. 1E (c), the second region is formed not only on the surface of the support substrate 1070 but also on the previously formed resist (protective film) 1080. Note that this can be selected depending on the mask shape, and the second region may not be formed on the resist 1080. Further, by adjusting the irradiation angle of the ultraviolet light source used at the time of curing the resist so that the side wall of the resist opening has an inclination angle, for example, the area on the lower surface side is increased as shown in FIG. 1D (d). The second region 101b made of a metal member or the second region 101b made of a metal member having a smaller area on the lower surface side as shown in FIG. 1D (e) can be used. By doing in this way, adhesiveness with Au which comprises the 1st area | region formed after that can be improved.

  After forming the second region as described above, after removing the resist (not shown), a conductive member to be the first region is formed. Here, as shown in FIG. 1E (d), Au is plated so as to continuously cover the upper surface of the support substrate 1070 and the second region 1010b formed on the upper surface of the support substrate 1070. In the case of electroless plating, Au is also plated on the second region formed on the resist 1080 made of an insulating member. Also, in the case of electrolytic plating, if a part of the second region on the resist 1080 is connected to the support, Au is plated thereon.

  FIG. 1D is a partially enlarged view of the conductive member 101. FIG. 1D (a) is a diagram in the case where the metal member constituting the second region 101b is made thinner than the thickness of the lowermost layer 101z made of Au. Here, Au is also continuous on the second region 101b. Is provided. In FIG. 1D (b), the metal member constituting the second region 101b and Au of the lowermost layer 101z are formed with substantially equal thickness. Further, in FIG. 1D (c), the metal member forming the second region 101b reaches the inside of the intermediate layer 101y, which is thicker than the lowermost layer 101z. As described above, the thickness of the metal member constituting the second region can be set to an arbitrary thickness, and although not shown, the thickness reaches the inside of all the intermediate layers among the plurality of intermediate layers. Further, it may reach the inside of the uppermost layer 101x or the upper surface of the uppermost layer. However, when the reflectance is improved by using Ag or the like having a high reflectance for the uppermost layer, it is preferable not to reach the upper surface of the uppermost layer. Also, depending on the thermal conductivity and other characteristics of the metal member constituting the second region, a thick thickness may adversely affect heat resistance, electrical resistance, etc., so Ti, for example, is the same as Au in the lowermost layer. It is preferable to set the thickness to an extent.

  The conductive member 1010 formed in the opening K or the like can be plated to be thicker than the thickness of the resist 1080 by adjusting the plating conditions, thereby forming the conductive member up to the upper surface of the protective film. Thus, a conductive member having a protrusion on the side surface as shown in FIG. 1A can be formed. As a plating method, it can select suitably according to the metal to be used or according to the target film thickness and flatness, and an electrolytic plating and an electroless plating can be used. In particular, it is preferable to use electrolytic plating, which makes it easy to remove the resist (protective film) and to form the conductive member in a uniform shape. Further, in order to improve the adhesion with the outermost layer (for example, Ag), it is preferable to form an intermediate layer (for example, Au) by strike plating on the lower layer.

  After plating, the resist 1080 is washed and removed, thereby forming a plurality of conductive members spaced from each other as shown in FIG. 1E (e). Note that when the resist 1080 is removed, the conductive member formed thereon is also removed (lift-off), and the upper surface of the support substrate 1070 is exposed between the plurality of conductive members 1010.

2. Second Step Next, as shown in FIG. 1F (a), a base 1030 made of a light shielding resin capable of reflecting light from the light emitting element is formed. Here, the base portion 1030a of the base and the side wall 1030b of the base are formed at the same time between the conductive members 1010. However, they may be formed in separate steps, and in that case, it is preferable to use the same light-shielding resin. However, different light-shielding resins may be used depending on the purpose and application.

  As a method for forming the substrate, methods such as injection molding, transfer molding, and compression molding can be used. For example, when the base 1030 is formed by transfer molding, the support substrate on which a plurality of conductive members are formed is set so as to be sandwiched in a mold composed of an upper mold and a lower mold. At this time, you may set in a metal mold | die via a release sheet | seat. Resin pellets, which are base materials, are inserted into the mold, and the support substrate and the resin pellets are heated. After melting the resin pellets, pressurize and fill the mold. The heating temperature, heating time, pressure, and the like can be appropriately adjusted according to the composition of the resin used. It can take out from the metal mold | die after hardening and the molded article shown to Fig.1F (a) can be obtained.

3. Third Step Next, as shown in FIG. 1F (b), the light emitting element 1020 is formed on the conductive member 1010 surrounded by the side wall 1030b of the base using an adhesive member (not shown) containing metal. The electrodes of the light emitting element and the conductive member 1010 are connected using the conductive wire 1050. Although the light emitting element having positive and negative electrodes on the same surface side is used here, a light emitting element having positive and negative electrodes formed on different surfaces can also be used.

4). Fourth Step In the fourth step, as shown in FIG. 1C (c), a sealing member 1060 made of a translucent resin is transferred, potted, and printed in a recess formed by being surrounded by the side wall 1030b of the substrate. It is formed by the method. In the case of a substrate having a recess, it is preferable to fill the recess with a translucent resin using potting. In this manner, the light emitting element 1020 and the conductive wire 1050 are covered with the sealing portion 1060 material. Here, the sealing member 1060 is provided so as to have substantially the same height as the side wall 1030b. However, the sealing member 1060 is not limited thereto, and may be formed to be lower or higher than the side wall 1030b. In addition, the upper surface may be a flat surface as described above, or may be formed in a curved shape in which the center is recessed or protruded. Further, the sealing member may have a single layer structure or a multilayer structure of two or more layers.

5. Fifth Step In the fifth step, after the sealing member 1060 is cured, the support substrate 1070 is peeled off as shown in FIG. 1F (c). At this time, the conductive member including the first region and the second region is removed. The bottom surface of 1010 and the upper surface of the support substrate 1070 are separated and removed so as to be separated.

  Through the above steps, the aggregate 1000 can be obtained in the light emitting device as shown in FIG. 1F (d). Finally, the broken line portion shown in FIG. 1F (d), that is, the base 1030 and the conductive member 1010 are cut into individual pieces at a position where the side wall 1030b of the base is cut, and the light emitting device as shown in FIG. 1A 100 can be obtained. Various methods such as dicing with a blade and dicing with a laser beam can be used as the method of dividing into pieces.

  Here, the light extraction direction can be limited to only the upward direction of the light emitting device 100 by cutting the side wall 1030b and cutting at a position where the sealing member 1060 is not cut. Thereby, the extraction of light in the upward direction is efficiently performed. In addition, in FIG. 1F (d), it cut | disconnected in the position containing a conductive member, However, You may cut | disconnect not only in this but in the position spaced apart from a conductive member. If the conductive member is cut at a position including the conductive member, the conductive member is exposed also on the side surface of the light emitting device, and solder or the like is easily joined. In addition, when cutting at a position away from the conductive member, since only the resin such as the base and the sealing member is cut, it is easier to cut compared to cutting the conductive member and the resin together. Can do.

  Hereinafter, each member of the light emitting device of the present invention will be described in detail.

(Conductive member)
In the present embodiment, the conductive member serves as a pair of electrodes that are electrically connected directly or indirectly to the light-emitting element and energizes electricity supplied from the outside. At least one conductive member Is a size on which a light emitting element can be placed, and the other has a size on which a conductive wire can be connected. In the present invention, the lower surface of the lowermost layer of the conductive member has a first region containing Au and a second region containing a metal member having a diffusion coefficient of metal in stainless steel smaller than that of Au. Since Au is exposed on the lower surface of the conductive member, it can function as an electrode having excellent adhesion to the circuit board, and can be conducted well. Furthermore, since the second region in which the alloying layer is difficult to be formed is exposed on the lower surface of the conductive member because the diffusion coefficient with the metal in the support substrate made of stainless steel is small in the manufacturing process, the conductive region is removed when the support substrate is removed. A member can be made difficult to be damaged or missing, and a light-emitting device can be obtained with high yield.

  Since the lowermost layer including the first region and the second region of the conductive member is exposed to the lower surface of the light emitting device after removing the support substrate, both have different characteristics, but both are made of conductive metal. Compared with the case where the lowermost layer of the conductive member is made of only Au, the circuit board can be satisfactorily connected without drastically reducing the electrical resistance. The first region and the second region only have to be formed so as to be exposed on the lower surface of the conductive member, and it is preferable that another metal member is formed on the upper portion thereof. It is preferable that Au constituting the first region is continuously formed on the region from the first region. Then, the layer including the first region and the second region may be a lowermost layer, and a layer made of a different metal member may be further stacked thereon. The lamination will be described later. In addition, when the metal member which comprises a 2nd area | region is thicker than Au which comprises a 1st area | region, for example, as shown to FIG. 1D (c), a 2nd area | region is comprised even inside the intermediate | middle layer 101y. When the metal member is formed, the layer including Au and the second region is the bottom layer.

  The first region and the second region can be adjusted such that the lower surface of each of the plurality of conductive members has the same area, or one of them has a wide area. For example, some heating processes such as resin curing and adhesive member curing are included in the process, but if the temperature in the highest heating process among these heating processes is relatively low, for example 250 When the temperature is about ℃ or less, an alloying layer is difficult to be formed at the interface between the Au in the first region and the support substrate made of stainless steel, and therefore it is preferable to make the first region larger than the second region. The adhesion between the separated light emitting device and the circuit board can be improved. In addition, when the heating temperature in the process is 250 ° C. or higher, it is preferable to make the area of the second region larger than the first region. This suppresses formation of the alloying layer and facilitates production with a high yield.

  Moreover, the shape of the 1st area | region and 2nd area | region in the lower surface of an electrically-conductive member can be made into arbitrary shapes. For example, when the first region is formed after the first region is first formed, by selecting various shapes of the second region to be formed first, for example, as shown in FIG. The region 101b can be formed in a shape such that squares are regularly arranged in a matrix and the periphery is surrounded by the first region 101a. Alternatively, as shown in FIG. 1C (b), the second region 101b ′ is formed in a lattice shape, and the first region 101a ′ is formed between the lattices, so that the first region 101a ′ becomes the second region. The shape may be surrounded by 101b ′. In addition to these shapes, dot shapes, stripe shapes, and polygon shapes may be formed in one or more combinations and sizes, regularly or irregularly arranged shapes, or indefinite shapes. it can. These can be easily formed by selecting the shape of a mask (including a resist and the like) used when forming the first region.

  The first region is a region made of Au that is exposed on the lower surface of the conductive member and has excellent wettability with solder used for mounting on the circuit board. When the heating temperature of Au and stainless steel increases, the metal easily diffuses in both directions or in one direction at the interface between them, and particularly, Fe, Ni, and Cr in stainless steel easily diffuse in Au. In particular, the highest temperature is applied in the step of adhering the light-emitting element onto the conductive member using an adhesive member containing metal, and at this time, heating is performed at a temperature of about 200 to 380 ° C. In such a temperature range, the diffusion coefficient between Au and the metal (Fe, Ni, Cr, etc.) in stainless steel is large, and in particular, an environment in which Fe, Ni, Cr, etc. easily diffuses into Au. In the present invention, these first regions are provided not partially on the entire lower surface of the conductive member, that is, the regions that are easily diffused are suppressed to partial regions. Can be suppressed. Furthermore, since the first region is in contact with the second region where it is difficult to form an alloying layer at the interface with the stainless steel, the adhesiveness between the regions is increased. It is possible to prevent the region and the second region from being damaged or missing. The film thickness of the first region is preferably about 0.04 μm to 1 μm, more preferably about 0.1 to 0.5 μm. Moreover, it can be set as the same film thickness as a 2nd area | region, a film thickness thicker than it, or a thin film thickness. Such a first region can be formed by using electroless plating or electrolytic plating. In particular, electrolytic plating is preferably used, whereby the resist (protective film) can be easily removed, and the conductive member can be made uniform. It becomes easy to form by shape.

  The second region is exposed on the lower surface of the conductive member in the same manner as the first region, and is a metal member having a diffusion coefficient smaller than that of metal in stainless steel, that is, an alloy of stainless steel as a support substrate compared to Au. This is a region composed of a metal member that is difficult to be formed. By providing such a region, an alloying layer is formed on the entire surface of the interface between the conductive member and stainless steel, and it is possible to suppress the difficulty of removing the stainless steel and to obtain a light-emitting device with high yield. In particular, a metal member whose diffusion coefficient with Fe, Ni, Cr, etc., which are main constituent metals in stainless steel, is smaller than that of Au is preferable. Thus, the metal in the stainless steel and the metal in the second region can function as a barrier layer that hardly diffuses in one direction or in one direction, that is, hardly forms an alloying layer. Such a second region can be provided on the entire lower surface of the conductive member. In this case, only the second region made of a metal different from Au is exposed on the lower surface of the conductive member after the support substrate is removed. It will be. Therefore, considering the mountability to the circuit board, it is preferable to perform Au plating again, but it is not preferable to increase the number of steps for handling a thin light emitting device assembly after removing the support substrate. It is preferable that Au is provided on the lowermost surface before the support substrate is removed as in the present invention.

  A preferable material for the metal member constituting the second region of the conductive member can include at least one selected from Ti, Pt, Pd, Al, Rh, and Mo, and Ti and Pt are particularly preferable. These metal members can function as a barrier layer because the diffusion coefficient with metals (particularly Fe, Ni, Cr) in stainless steel is smaller than that of Au. The film thickness of the second region is preferably about 0.02 μm to 5 μm, more preferably about 0.02 μm to 1 μm, and particularly preferably about the same as the thickness of Au constituting the first region. Similar to the first region, the second region can be formed by plating, or can be formed by a method such as sputtering or vapor deposition.

  The film thickness of the conductive member is preferably about 10 μm to 100 μm, and particularly preferably about 45 μm to 95 μm. By setting it as the thickness of the said range, it can be set as the electrically-conductive member of a comparatively uniform film thickness. In particular, the layer having the first region and the second region as described above is preferably the lowermost layer, and a metal layer is further laminated thereon, and it is particularly preferred that the layer be laminated by plating.

  The uppermost layer of the conductive member on which the light emitting element is placed is preferably provided with a material capable of reflecting light from the light emitting element or the wavelength conversion member, specifically, gold, silver, copper, Pt, Pd, Al , W, Mo, Ru, Rh and the like are preferable. Furthermore, it is preferable that the outermost conductive member has high reflectivity and high gloss. Specifically, the reflectance in the visible region is preferably 70% or more. In this case, Au, Al, Ag, Ru, Rh, Pt, Pd and the like are preferable, and Ag is particularly preferable. Further, it is preferable that the surface gloss of the conductive member is high. Specifically, the glossiness is preferably 0.5 or more, more preferably 1.0 or more. The glossiness shown here is a number obtained by 45 ° irradiation and vertical light reception using a Nippon Denshoku Industries micro surface color difference meter VSR 300A.

  In order to improve the mechanical strength of the conductive member or the light emitting device as an intermediate layer between the lowermost layer having the lower surface having the first region and the second region and the uppermost layer on which the light emitting element is placed. It is preferable to use a metal with high corrosion resistance, such as Ni, and in order to improve heat dissipation, it is preferable to use a suitable member depending on the purpose and application, such as using copper with high thermal conductivity. . Also for this intermediate layer, Pt, Pd, Al, W, Ru, Pd, etc. can be used in addition to the above metals, and a metal having good adhesion to the uppermost layer or the lowermost layer metal may be laminated. The intermediate layer is preferably formed thicker than the uppermost layer or the lowermost layer.

In the case of a plated layer made of metal, the linear expansion coefficient is defined by the composition thereof, and therefore, the lowermost layer and the intermediate layer preferably have a linear expansion coefficient relatively close to that of the support substrate. For example, SUS430 having a linear expansion coefficient of 10.4 × 10 ⁻⁶ / K is used as the support substrate, and a conductive member is formed thereon with a linear expansion coefficient of 14.2 × 10 ⁻⁶ / K from the lowermost layer side. A certain Au (0.04 to 0.1 μm) / Ni having a linear expansion coefficient of 12.8 × 10 ⁻⁶ / K (or Cu having a linear expansion coefficient of 16.8 × 10 ⁻⁶ / K) (40 to 70 μm) A laminated structure such as Ag (2 to ⁶ μm) that is / Au (0.01 to 0.07 μm) / linear expansion coefficient 119.7 × 10 ⁻⁶ / K is preferable. The top layer of Ag has a linear expansion coefficient that is significantly different from that of other layers of metal, but it is because priority is given to the reflectance of light from the light emitting element, and the influence on the warp is extremely weak because of its extremely thin thickness. There is no practical problem.

  The side surface of the conductive member may be a flat surface, but it is preferable to have a shape having a protrusion as shown in FIG. 1B in consideration of adhesion to the substrate. This protrusion is preferably provided at a position separated from the lower surface of the conductive member 101, thereby preventing problems such as the conductive member 101 falling off the base 103. Such a protrusion can be provided at an arbitrary position around the conductive member, and can be provided partially, for example, only on two opposing side surfaces of the conductive member having a quadrangular view in top view. In order to prevent dropping more reliably, it is preferable to form the entire periphery of the conductive member.

(Substrate)
In this embodiment mode, the base is a resin having a concave portion including a bottom surface portion and a side wall provided between a pair of conductive members, and light from the light emitting element is added by adding various light-shielding fillers. Is made of a resin capable of shielding light. By providing such a light-shielding substrate, light from the light emitting element can be prevented from leaking to the outside from the lower surface (back surface) side of the light emitting device, and the light extraction efficiency in the upper surface direction is improved. Can be made. In addition, the base | substrate which does not have a side wall, ie, a base | substrate only of a bottom face part, may be sufficient. The thickness of the bottom surface and the side wall of the substrate may be any thickness that can suppress light leakage from the light emitting element.

  The substrate may be any member that can block light from the light emitting element, and preferably has a small difference in linear expansion coefficient from the support substrate. Furthermore, it is preferable to use an insulating member. As a preferable material, a resin such as a thermosetting resin or a thermoplastic resin can be used. In particular, when the conductive member has a very thin thickness of about 25 μm to 200 μm, a thermosetting resin is preferable. Thus, a very thin substrate can be obtained. Furthermore, specifically, an epoxy resin composition, a silicone resin composition, a modified epoxy resin composition such as a silicone-modified epoxy resin, a modified silicone resin composition such as an epoxy-modified silicone resin, a polyimide resin composition, and a modified polyimide resin composition Etc.

  In particular, a thermosetting resin is preferable, and a resin described in JP-A-2006-156704 is preferable. For example, among thermosetting resins, epoxy resins, modified epoxy resins, silicone resins, modified silicone resins, acrylate resins, urethane resins and the like are preferable. Specifically, (i) an epoxy resin composed of triglycidyl isocyanurate and hydrogenated bisphenol A diglycidyl ether, and (ii) hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride It is preferable to use a solid epoxy resin composition containing a colorless and transparent mixture obtained by dissolving and mixing an acid anhydride composed of an acid with an epoxy resin so as to have an equivalent amount. Furthermore, with respect to 100 parts by weight of these mixtures, 0.5 parts by weight of DBU (1,8-Diazabicyclo (5,4,0) undecene-7) as a curing accelerator, 1 part by weight of ethylene glycol as a co-catalyst, oxidation A solid epoxy resin composition in which 10 parts by weight of a titanium pigment and 50 parts by weight of glass fiber are added and partially cured by heating to form a B stage is preferable.

  Moreover, the thermosetting epoxy resin composition which has the epoxy resin containing a triazine derivative epoxy resin as an essential component as described in international publication number WO2007 / 015426 is preferable. For example, it is preferable to include a 1,3,5-triazine nucleus derivative epoxy resin. In particular, an epoxy resin having an isocyanurate ring is excellent in light resistance and electrical insulation. It is desirable to have a divalent, more preferably a trivalent epoxy group for one isocyanurate ring. Specifically, tris (2,3-epoxypropyl) isocyanurate, tris (α-methylglycidyl) isocyanurate, or the like can be used. The softening point of the triazine derivative epoxy resin is preferably 90 to 125 ° C. These triazine derivative epoxy resins may be used in combination with a hydrogenated epoxy resin or other epoxy resins. Furthermore, in the case of a silicone resin composition, a silicone resin containing a methyl silicone resin is preferable.

  In particular, the case where a triazine derivative epoxy resin is used will be specifically described. It is preferable to use an acid anhydride that acts as a curing agent for the triazine derivative epoxy resin. In particular, light resistance is improved by using an acid anhydride that is non-aromatic and does not have a carbon-carbon double bond. Can be made. Specific examples include hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, and hydrogenated methylnadic anhydride, and methylhexahydrophthalic anhydride is particularly preferable. Moreover, it is preferable to use antioxidant, for example, phenol type and sulfur type antioxidant can be used.

These resins can be mixed with a filler for imparting light-shielding properties and various additives as necessary. In the present invention, these are referred to as light-shielding resins constituting the substrate. For example, light can be transmitted by mixing fine particles such as TiO ₂ , SiO ₂ , Al ₂ O ₃ , MgO, MgCO ₃ , CaCO ₃ , Mg (OH) ₂ , and Ca (OH) ₂ as a filler (filler). It is preferable to adjust the rate so that about 60% or more of the light from the light emitting element is shielded, more preferably about 90%. Here, either the light may be reflected or absorbed by the substrate, but when the light-emitting device is used for illumination or the like, it is more preferable to shield the light by reflecting it. Therefore, it is preferable that the reflectance with respect to the light from the light emitting element is 60% or more, more preferably 90% or more.

  The various fillers as described above can be used alone or in combination of two or more. For example, the filler for adjusting the reflectance and the linear expansion coefficient as described later can be used. It can be used in combination with fillers.

For example, when TiO ₂ is used as a white filler, it is preferably added in an amount of 10 to 30 wt%, more preferably 15 to 25 wt%. TiO ₂ may be either a rutile type or an anatase type. The rutile type is preferable from the viewpoint of light shielding properties and light resistance. Furthermore, when it is desired to improve dispersibility and light resistance, a filler modified by surface treatment can also be used. For the surface treatment of the filler made of TiO _2, hydrated oxides such as alumina, silica and zinc oxide, oxides and the like can be used. In addition to these, it is preferable to use SiO ₂ in the range of 60～80Wt% as a filler for adjusting a predominantly linear expansion coefficient as a filler, further, preferably used 65~75wt%. As the SiO _2, less amorphous silica coefficient of linear expansion than the crystalline silica is preferable. Further, a filler having a particle size of 100 μm or less, and further a filler of 60 μm or less is preferable. Furthermore, a spherical filler is preferable, which can improve the filling property when molding the substrate. In the case of use in a display or the like, in order to improve the contrast, it is preferable that the light absorption rate from the light emitting element is 60% or more, more preferably 90% or more. In such cases, as the filler, carbon such as acetylene black, activated carbon, graphite, transition metal oxides such as iron oxide, manganese dioxide, cobalt oxide, molybdenum oxide, or colored organic pigments are used depending on the purpose. can do.

Further, it is preferable to control the linear expansion coefficient of the substrate so that the difference from the linear expansion coefficient of the support substrate to be removed (peeled) before being separated into pieces is reduced. The difference is preferably 30% or less, more preferably 10% or less. When a SUS plate is used as the support substrate, the difference in coefficient of linear expansion is preferably 20 ppm or less, and more preferably 10 ppm or less. In this case, it is preferable to add 70 wt% or more, preferably 85 wt% or more of the filler. Thereby, since the residual stress between the support substrate and the base can be controlled (relaxed), the warpage of the assembly of the light emitting devices before being separated into pieces can be reduced. By reducing the warpage, internal damage such as cutting of the conductive wire can be reduced, and the positional deviation at the time of singulation can be suppressed, and manufacturing can be performed with high yield. For example, the linear expansion coefficient of the substrate is preferably adjusted to 5 to 25 × 10 ⁻⁶ / K, more preferably 7 to 15 × 10 ⁻⁶ / K. Thereby, it is possible to easily suppress the warpage that occurs during cooling after the base is molded, and it is possible to manufacture with high yield. In addition, in this specification, a linear expansion coefficient refers to the linear expansion coefficient below the glass transition temperature of the base | substrate which consists of light-shielding resin adjusted with various fillers. It is preferable that the linear expansion coefficient in this temperature region is close to the linear expansion coefficient of the support substrate.

  From another viewpoint, it is preferable to control the linear expansion coefficient of the substrate so that the difference from the linear expansion coefficient is small. The difference is preferably 40% or less, more preferably 20% or less. Thereby, in the light-emitting device after separation, it is possible to suppress the peeling of the conductive member and the substrate, and to obtain a light-emitting device with excellent reliability.

(Sealing member)
The sealing member is a member that protects electronic components such as a light emitting element, a light receiving element, a protective element, and a conductive wire from dust, moisture, and external force. In the present embodiment, FIG. As shown in FIG. 1B, the concave portion S of the base 103 is filled.

  As a material for the sealing member, a material having a light-transmitting property capable of transmitting light from the light-emitting element and having light resistance that is not easily deteriorated by them is preferable. Specific examples of the material include a silicone resin composition, a modified silicone resin composition, an epoxy resin composition, a modified epoxy resin composition, and an acrylic resin composition. A composition can be mentioned. Furthermore, a silicone resin, an epoxy resin, a urea resin, a fluororesin, and a hybrid resin containing at least one of these resins can also be used. Furthermore, not only these organic substances but also inorganic substances such as glass and silica sol can be used. In addition to such materials, a colorant, a light diffusing agent, a light reflecting material, various fillers, a wavelength conversion member (fluorescent member), and the like can be included as desired. The filling amount of the sealing member may be an amount that covers the electronic component.

  The shape of the outer surface of the sealing tree member can be variously selected according to the light distribution characteristics. For example, the directivity can be adjusted by making the upper surface into a convex lens shape, a concave lens shape, a Fresnel lens shape, or the like. In addition to the sealing member, a lens member may be provided. Furthermore, when using a molded article containing a fluorescent member, for example, a plate-like molded article containing a fluorescent member, a dome-shaped molded article, etc., it is preferable to select a material having excellent adhesion as the sealing member. In addition to the resin composition, the fluorescent member-containing molded body may be made of an inorganic material such as glass.

  Further, instead of the base made of the above light-shielding resin, the conductive member and each electronic component placed thereon may be integrally held with the resin used as the sealing member.

(Adhesive member)
The adhesive member is a member that adheres the light emitting element and the conductive member. A resin, a metal, or the like can be used, but a resin excellent in heat resistance or a member containing a metal is preferable, and a member made of a metal is more preferable. Specifically, as the resin excellent in heat resistance, an epoxy resin composition, a silicone resin composition, a polyimide resin composition, a modified resin thereof, a hybrid resin, and the like can be used, and a hybrid resin is particularly preferable. In addition, conductive pastes such as silver, gold, and palladium, solders such as Au—Sn eutectic, and brazing materials such as low melting point metals can be used, and Au—Sn eutectic solder is particularly preferable. Some of these require a process of heating at a relatively high temperature compared to other processes in the manufacturing process. For example, in the case of Au—Sn eutectic solder, heating is performed at about 270 to 340 ° C. At this time, Au and the metal in the stainless steel easily diffuse in one direction or in one direction at the interface between the lowermost layer of the conductive member and the stainless steel as the support substrate. In the present invention, since the second region including the metal member having a diffusion coefficient with the metal in the stainless steel smaller than that of Au is formed, the stainless steel can be removed relatively easily and with a high yield. By using a metal or a resin excellent in heat resistance as an adhesive member in this way, it is difficult to deteriorate due to high-temperature heat generation during driving accompanying the increase in output of the light-emitting element, and adhesion is not likely to decrease.

(Conductive wire)
Examples of the conductive wire that directly or indirectly connects the electrode of the light emitting element and the conductive member include conductive wires using metals such as gold, copper, platinum, and aluminum, and alloys thereof. In particular, it is preferable to use gold excellent in thermal resistance.

(Wavelength conversion member)
In the sealing member, a fluorescent member that emits light having a different wavelength by absorbing at least a part of light from the light emitting element may be contained as a wavelength conversion member.

  As the fluorescent member, it is more efficient to convert the light from the light emitting element into a longer wavelength. However, the present invention is not limited to this, and various fluorescent members such as one that converts light from the light emitting element into a short wavelength or one that further converts light converted by another fluorescent member can be used. Such a wavelength conversion member may form one type of fluorescent member as a single layer, may form a single layer in which two or more types of fluorescent members are mixed, or one type of fluorescent member. Two or more monolayers may be laminated, or two or more monolayers in which two or more kinds of fluorescent members are mixed may be laminated.

As the fluorescent member, for example, when a semiconductor light-emitting element having a nitride-based semiconductor as a light-emitting layer is used as the light-emitting element, any member that absorbs light from the light-emitting element and converts it into light of a different wavelength may be used. For example, a nitride-based phosphor / oxynitride-based phosphor mainly activated by a lanthanoid element such as Eu or Ce, more specifically, (a) an Eu-activated α- or β-sialon-type phosphor, Various alkaline earth metal nitride silicates, various alkaline earth metal aluminum silicon nitrides (eg, CaSiAlN ₃ : Eu, SrAlSi ₄ N ₇ : Eu, etc.), (b) lanthanoid elements such as Eu, transition metal systems such as Mn Alkaline earth metal halogenapatite, alkaline earth metal halosilicate, alkaline earth metal silicate, alkaline earth metal borate, alkaline earth metal aluminate, alkaline earth metal sulfide , Alkaline earth metal thiogallate, alkaline earth metal silicon nitride, germanate, or (c) lanthanum such as Ce Selected from organic and organic complexes mainly activated with lanthanoid elements such as rare earth aluminates, rare earth silicates, alkaline earth metal rare earth silicates (d) Eu, etc. It is preferable that it is at least any one or more. Preferably, Y ₃ Al ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, which is a rare earth aluminate phosphor mainly activated by a lanthanoid element such as Ce. Y ₃ (Al _0.8 Ga _0.2 ) ₅ O ₁₂ : Ce, (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ is a YAG phosphor represented by a composition formula. Further, there are Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce, etc. in which a part or all of Y is substituted with Tb, Lu, or the like. Furthermore, fluorescent members other than the above-described fluorescent members, which have similar performance, action, and effect, can be used.

Moreover, what apply | coated the fluorescent member to other molded objects, such as glass and a resin composition, can also be used. Furthermore, a molded body containing a fluorescent member can also be used. Specifically, fluorescent member-containing glass, YAG sintered body, sintered body such as YAG and Al ₂ O ₃ , SiO ₂ , B ₂ O ₃ , crystallized inorganic bulk in which YAG is precipitated in an inorganic melt A body or the like, or a fluorescent member integrally formed with epoxy, silicone, hybrid resin, or the like can be used.

(Light emitting element)
In the present invention, the light emitting element has various structures such as a structure in which positive and negative electrodes are formed on the same surface side, a structure in which positive and negative electrodes are formed on different surfaces, and a structure in which a substrate different from the growth substrate is bonded. A semiconductor element can be used.

A semiconductor light emitting device having an arbitrary wavelength can be selected. For example, the blue, the green light emitting element, ZnSe and nitride semiconductor _{(In X Al Y Ga 1-} X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1), used after using GaP be able to. As the red light emitting element, GaAlAs, AlInGaP, or the like can be used. Furthermore, a semiconductor light emitting element made of a material other than this can also be used. The composition, emission color, size, number, and the like of the light emitting element to be used can be appropriately selected according to the purpose.

In the case of a light emitting device having a wavelength conversion member, a nitride semiconductor capable of emitting a short wavelength that can efficiently excite the wavelength conversion member (In _X Al _Y Ga _1- XYN, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is preferred. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal.

  Further, a light-emitting element that outputs not only light in the visible light region but also ultraviolet rays and infrared rays can be obtained. Furthermore, a light receiving element or the like can be mounted together with or independently of the light emitting element, and a protective element or the like can also be mounted. In addition, the conductive member may be indirectly mounted via another member such as a pedestal member in addition to being directly bonded onto the conductive member via the adhesive member.

(Support substrate)
The support substrate is a plate-like or sheet-like member used for forming the conductive member, and is a member that is not included in the light-emitting device because it is removed before being separated into individual pieces.

The support substrate is made of stainless steel (SUS), and various types of stainless steel such as altensite, ferrite, and austenite can be used. Preferably, a stainless ferritic, particularly preferably 400 system, are of 300 system, ^{further, SUS430 (10.4 × 10 -6 /K),SUS444(10.6×10} -6 / K ^{), SUS303 (18.7 × 10 -6} /K),SUS304(17.3×10 -6 / K) and the like are preferably used. When 400-type stainless steel is subjected to acid treatment as a pretreatment for plating, the surface is likely to be rough compared to 300-type stainless steel. Therefore, when a plating layer is formed thereon, the surface is also likely to become rough, whereby the sealing member In addition, the adhesion to the resin constituting the substrate can be improved. In addition, since the surface of 300 series is hardly roughened by acid treatment, it is easy to improve the glossiness of the surface of the plating layer, thereby improving the reflectivity from the light emitting element and providing a light emitting device with high light extraction efficiency. .

  The thickness of the support substrate is preferably a plate-shaped member having a thickness of about 10 μm to 300 μm, and the support substrate may be slit, grooved, or corrugated to reduce warpage after resin molding.

<Embodiment 2>
2A and 2B show a light emitting device 200 and a manufacturing method thereof according to the present embodiment. The manufacturing method of the second embodiment is performed in the same manner as in the first embodiment, except that the method for forming the metal member constituting the second region of the conductive member is different from the first embodiment. An assembly of light emitting devices obtained by the method of the second embodiment and a light emitting device obtained by separating the same are the same as those of the first embodiment. Hereinafter, differences from the first embodiment will be described, and other processes will be omitted as appropriate because the same method as in the first embodiment can be used.

1. First Step First, as shown in FIG. 2A (a), a flat support substrate 2070 made of stainless steel is prepared. A resist 2080 is applied as a protective film on the upper surface of the support substrate. After the resist is dried, a mask 2100 having an opening on the top is directly or indirectly arranged, and exposure is performed by irradiating ultraviolet rays in the direction of the arrow in the figure. Here, the size of the opening of the mask 2100 is used as a mask having a small opening for later forming a metal member that forms the second region of the conductive member. Further, the mask shape is adjusted so that a resist is also formed in a region corresponding to the bottom shape of the base so that a conductive member is not formed in a region where a base (particularly the bottom portion) is formed later.

  After exposure, a resist 2080 having an opening as shown in FIG. 2A (b) is formed by processing with an etching agent. Here, in accordance with the size of the opening of the mask, the resist 2080b formed in a portion that will later become the first region on the lower surface of the conductive member, and the area larger than that, the base (bottom portion) is formed later. And a resist 2080a formed in a portion to be formed.

  Next, as shown in FIG. 2A (c), a metal member constituting the second region 2010b on the lower surface of the conductive member, that is, a metal member having a diffusion coefficient smaller than that of metal in stainless steel is exposed in the opening. Formed on the supporting substrate 2070. Then, by removing the resist, a plurality of metal members are formed as shown in FIG. 2A (d), and these become the second region 2010b on the lower surface of the conductive member.

  Next, in order to form a conductive member to be a first region, a resist 2080 is again provided on the entire upper surface of the support substrate as shown in FIG. 2B (a), and exposure is performed by irradiating ultraviolet rays through a mask 2110. Here, a mask having an opening that leaves a resist only in a region where a base (bottom) is to be formed later is used. Thereafter, a plurality of resists 2080 as shown in FIG. 2B (b) are formed by processing with an etching agent.

  Next, as shown in FIG. 2B (c), Au forming the first region 2010a on the lower surface of the conductive member is formed, and then plating is performed in the same manner as in the first embodiment to form the conductive member 2010.

  Thereafter, by removing the resist 2080, a plurality of conductive members 2010 as shown in FIG. 2B (d) are formed on the support substrate.

  The light emitting device of the present invention can be obtained by performing the second and subsequent steps in the same manner as in the first embodiment. Although the first step is different from that of the embodiment, the light-emitting device finally obtained is the same as that obtained in Embodiment 1.

<Embodiment 3>
A light-emitting device 300 of the present embodiment is shown in FIG. 3D. FIG. 3D shows a cross-sectional view of the light emitting device 300 and a partially enlarged view thereof.

  In Embodiment 3, a light-emitting device 300 includes a light-emitting element 302, a pair of conductive members 301 having an upper surface that is electrically connected to the light-emitting element 302, and a base body 303 that is in contact with an outer edge of the conductive member 301. Have. The base 303 has a recess composed of a bottom surface portion 303a and a side wall 303b, and a part of the upper surface of the pair of conductive members 301 is exposed at the bottom surface of the recess. The lower surface of the conductive member 301 is exposed from the lower surface (back surface) of the base body 303. The light emitting element 302 and the conductive member 301 are electrically connected via a conductive wire 305, and a sealing member 306 is provided in the recess so as to cover these electronic components. In the third embodiment, the lower surface of the conductive member 301 includes a first region 301a made of Au and a second region 301b including a metal member having a diffusion coefficient smaller than that of Au in the metal in stainless steel. Furthermore, the lower surface of the base body 303 is also provided with a metal member constituting the second region formed on the lower surface of the conductive member.

  Such a light emitting device 300 can be obtained by the following manufacturing method. The third embodiment is different from the other embodiments in that the position constituting the second region of the conductive member is also formed on the support substrate corresponding to the position where the base is formed later. The exception process can be performed substantially in the same manner. 3A to 3C are diagrams illustrating a process of forming the light emitting device assembly 3000, and the light emitting device 300 illustrated in FIG. 3D can be obtained by cutting the assembly 3000 into pieces.

1. First Step First, as shown in FIG. 3A, a flat support substrate 3070 made of stainless steel is prepared. A resist 3080 is applied as a protective film on the surface of the support substrate. After the applied resist 3070 is dried, a mask 3100 having an opening is disposed directly or indirectly on the resist 3070, and exposure is performed by irradiating ultraviolet rays as indicated by arrows in the drawing. Thereafter, a protective film 2080 having an opening as shown in FIG. 3A (b) is formed by processing with an etching agent. The protective film 2080 is formed so as to be distributed substantially uniformly without distinguishing between a region where a conductive member is formed later and a region where a base is formed.

  Next, as shown in FIG. 3A (c), a metal member constituting the second region 3010b on the lower surface of the conductive member, that is, a metal member having a diffusion coefficient smaller than that of metal in stainless steel is exposed in the opening. It is formed on the supported substrate 3070. Then, by removing the resist, a plurality of metal members are formed as shown in FIG. 3A (d), and these become the second region 3010b on the lower surface of the conductive member.

  Next, a resist 3081 is provided on the upper surface of the support substrate 3070 again as shown in FIG. At this time, a resist 3081 is formed only in a region where a base (bottom) is to be formed later.

  Next, as shown in FIG. 3B (c), Au forming the first region 3010a on the lower surface of the conductive member is formed, and then plating is performed in the same manner as in Embodiment 1 to form the conductive member 3010.

  Thereafter, by removing the resist 3080, a plurality of conductive members 3010 as shown in FIG. 3B (d) are formed on the support substrate. At this time, the metal member 3010b constituting the second region of the conductive member 3010 is formed to be covered with the first region 3010a and to be exposed without being covered with them.

2. Second Step The second and subsequent steps are performed in the same manner as in the first embodiment. As shown in FIG. 3C (a), a base body 3030 having a bottom surface portion 3030a and side walls 3030b is formed. At this time, the base member 3030 is formed so that the metal member constituting the second region 3010b of the conductive member 3010 is embedded. Next, as shown in FIG. 3C (b), the light emitting element 3020 is mounted, and the electrode of the light emitting element and the conductive member 301 are connected using the conductive wire 3050. After that, as shown in FIG. 3C (c), a sealing member 3060 is formed so as to cover the light emitting element 3020, and the support substrate 3070 is peeled off to form an aggregate 3000 of the light emitting device, as shown in FIG. 3C (d). The light emitting device 300 shown in FIG. 3D is obtained by cutting along the broken line part into pieces.

  As shown in FIG. 3D, a metal member 301 b constituting the second region of the conductive member is embedded on the lower surface side of the base body 303. The metal member 301b formed at such a position is a metal member that does not participate in conduction, and does not function as an electrode. However, it can function as a heat radiating member that easily releases the heat generated from the light emitting element 302 to the outside from the inside of the base body 303, thereby improving heat resistance.

  The light-emitting device according to the present invention is small and lightweight, and can obtain a light-emitting device with light extraction efficiency, and can also be used for various display devices, lighting fixtures, displays, backlight light sources for liquid crystal displays, and the like. Can do.

100, 200: Light emitting device 101, 201: Conductive member 101a, 301a: First region (Au) of conductive member
101b, 301b ... 2nd area | region (metal member) of an electroconductive member
101x ... uppermost layer of conductive member 101y ... middle layer of conductive member 101z ... lowermost layer 102 of conductive member, light emitting element 103, 303 ... base 103a, 303a ... of base Bottom surface portion 103b, 303b ... side wall of substrate S ... concave portion 104 of substrate 104 ... protective element 105, 305 ... conductive wire 106, 306 ... sealing member 1000, 3000 ... light emitting device 1010, 2010, 3010 ... conductive member 1010a, 2010a, 3010a ... first region of conductive member 1010b, 2010a, 2010b ... second region of conductive member 1020, 3020 ... light emitting element 1030 , 3030 ... Base 1030a, 3030a ... Bottom of base 1030b, 3030b ... Side wall 1050, 30 of base 0 ... conductive wire 1060,3060 ... sealing member 1070,2070,3070 ... supporting substrate 1080,2080,3080 ... protective film (resist)
1100, 2100, 3100 ... Mask

Claims (10)

On a support substrate made of stainless steel, a plurality of conductive members having a lowermost layer having a first region having Au and a second region including a metal member having a diffusion coefficient smaller than that of metal in the stainless steel are formed. A first step;
A second step of forming a base made of a light-shielding resin on the support substrate between the conductive members;
A third step of bonding a light emitting element to the upper surface of the conductive member via an adhesive member;
A fourth step of covering the light emitting element with a translucent sealing member;
A fifth step of separating the light emitting device after removing the support substrate;
A method for manufacturing a light-emitting device, comprising:   2. The method for manufacturing a light emitting device according to claim 1, wherein the first step includes a step of forming the first region so as to continue from the support substrate onto the second region.   In the first step, at least one intermediate layer having a metal different from the metal constituting the lowermost layer is formed on the lowermost layer, and the light emitting element is mounted on the intermediate layer. The method for manufacturing a light emitting device according to claim 1, further comprising a step of forming the upper layer by plating. A light emitting element;
A conductive member to which the light emitting element is bonded to the upper surface via an adhesive member;
A base for holding the lower surface of the conductive member exposed;
A light emitting device comprising:
The light emitting device according to claim 1, wherein the lower surface of the conductive member includes a first region having Au and a plurality of second regions including a metal member having a diffusion coefficient smaller than that of the metal in the stainless steel.   The light emitting device according to claim 4, wherein the second region includes a metal member having a diffusion coefficient smaller than that of Au with at least one metal member selected from Fe, Ni, and Cr.   The light emitting device according to claim 4, wherein the second region includes at least one metal member selected from Ti, Pt, Pd, Al, Rh, and Mo.   The conductive member is a metal different from a metal constituting the lowermost layer and the uppermost layer between a lowermost layer having a lower surface including the first region and the second region and an uppermost layer on which the light emitting element is placed. The light-emitting device according to claim 4, comprising a plating layer having at least one intermediate layer made of   The light emitting device according to claim 7, wherein the intermediate layer includes a first intermediate layer made of Ni or Cu and a second intermediate layer made of Au.   The light emitting device according to claim 4, wherein the base is made of a thermosetting resin.   The light emitting device according to claim 4, wherein the base is a cured product of a thermosetting resin composition including a triazine derivative epoxy resin.

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