JP2009152590A - 高静電容量フィルムコンデンサシステムおよびその製造方法 - Google Patents
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- 239000003990 capacitor Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229920006254 polymer film Polymers 0.000 claims abstract description 31
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 33
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 13
- 239000002033 PVDF binder Substances 0.000 claims description 9
- 239000004743 Polypropylene Substances 0.000 claims description 8
- -1 polypropylene Polymers 0.000 claims description 8
- 229920000728 polyester Polymers 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229920005569 poly(vinylidene fluoride-co-hexafluoropropylene) Polymers 0.000 claims description 6
- 229920001155 polypropylene Polymers 0.000 claims description 6
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 6
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 5
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 5
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000006229 carbon black Substances 0.000 claims description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 5
- 239000002041 carbon nanotube Substances 0.000 claims description 5
- 229910003472 fullerene Inorganic materials 0.000 claims description 5
- 229920002530 polyetherether ketone Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 5
- 239000004697 Polyetherimide Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000003618 dip coating Methods 0.000 claims description 4
- 229920001601 polyetherimide Polymers 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229920002678 cellulose Polymers 0.000 claims description 3
- 239000001913 cellulose Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229920000131 polyvinylidene Polymers 0.000 claims description 3
- 229920002554 vinyl polymer Polymers 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 38
- 239000011888 foil Substances 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 125000004093 cyano group Chemical group *C#N 0.000 description 6
- 239000011104 metalized film Substances 0.000 description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- 229920006255 plastic film Polymers 0.000 description 4
- 239000002985 plastic film Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229920004738 ULTEM® Polymers 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000002897 polymer film coating Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- WTKKCYNZRWIVKL-UHFFFAOYSA-N tantalum Chemical compound [Ta+5] WTKKCYNZRWIVKL-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/32—Wound capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
【解決手段】フィルムコンデンサ(10)は、1対の電極(12)のそれぞれの上に付着されて誘電層を形成するポリマーフィルム(20)を含む。 本発明の別の実施形態によれば、フィルムコンデンサを製造する方法が提供される。この方法は、1対の電極を配置するステップを含む。この方法はまた、1対の電極のそれぞれに対して複数の孔を形成するステップを含む。この方法は、1対の電極のそれぞれの上にポリマーフィルムの被覆物を付着させるステップをさらに含む。
【選択図】図1
Description
12、32 電極
14、34 孔
18 多孔質表面
20、40 ポリマーフィルム
30 金属化フィルムコンデンサ
36 金属被覆物
38 多孔質炭素粒子
50 フィルムコンデンサの製造方法
52 1対の電極を配置するステップ
54 1対の電極のそれぞれに対して複数の孔を形成するステップ
56 1対の電極のそれぞれの上にポリマーフィルムの被覆物を付着させるステップ
58 ポリマーフィルムで被覆された電極をコンデンサに巻きつけるステップ
Claims (17)
- 複数の孔を有する1対の電極と、
前記1対の電極のそれぞれの上に付着されて誘電層を形成するポリマーフィルムと
を有するフィルムコンデンサ。 - 前記1対の電極のそれぞれが、アルミニウム、タンタル、銅、ステンレス鋼、チタン、金属化ポリマーフィルム(40)からなる群から選択される少なくとも1つの要素を含む、請求項1記載のフィルムコンデンサ。
- 前記金属化ポリマーフィルム(40)が、ポリプロピレン、ポリエステル、硫化ポリフェニレン、ポリエーテルエーテルケトン、ポリフッ化ビニリデン、ポリフッ化ポリビニリデン−三フッ化エチレン、ポリフッ化ポリビニリデン−ヘキサフルオロプロピレン、ポリエーテルイミドおよびポリイミドを含む、請求項2記載のフィルムコンデンサ。
- 前記孔が、前記1対の電極のそれぞれの上部にある多孔質表面によって構成される、請求項1記載のフィルムコンデンサ。
- 前記孔が、前記電極の上に付着された複数の多孔質炭素粒子によって構成される、請求項1記載のフィルムコンデンサシステム。
- 前記多孔質炭素粒子が、カーボンブラック、活性炭、炭素ナノチューブ、および、trimetasphere炭素フラーレン球を含む、請求項1記載のフィルムコンデンサ。
- 前記ポリマーフィルムが、シアン化樹脂、セルロース、酢酸塩、アクリラート、および、ポリ二フッ化ビニルからなる群から選択される少なくとも1つのポリマーを含む、請求項1記載のフィルムコンデンサ。
- 前記孔が約1000nm未満の間隔を有する、請求項1記載のフィルムコンデンサ。
- システムが少なくとも約100μFの静電容量を有する、請求項1記載のフィルムコンデンサ。
- 前記ポリマーフィルムが最大で約1μmの厚さを有する、請求項1記載のフィルムコンデンサ。
- フィルムコンデンサを製造する方法であって、
1対の電極を配置するステップと、
前記1対の電極のそれぞれに対して複数の孔を形成するステップと、
前記1対の電極のそれぞれの上にポリマーフィルムの被覆物を付着させるステップと、
前記ポリマーフィルムで被覆された前記電極をコンデンサに巻きつけるステップと
を含む方法。 - 前記複数の孔を形成するステップが、多孔質表面を備えるようにくぼみ形成された前記1対の電極を配置するステップを含む、請求項11記載の方法。
- 前記複数の孔を形成するステップが、複数の多孔質炭素粒子を前記1対の電極のそれぞれの上に貼着させるステップを含む、請求項11記載の方法。
- 前記複数の多孔質炭素粒子を貼着させるステップが、複数の炭素ナノチューブ、活性炭、カーボンブラック、または、trimetasphere炭素フラーレン球のうちの少なくとも1つを前記1対の電極の上に貼着させるステップを含む、請求項13記載の方法。
- 前記ポリマーフィルムの被覆物を付着させるステップが、電気泳動手法によって前記被覆物を付着させるステップを含む、請求項11記載の方法。
- 前記電気泳動手法が浸漬被覆を含む、請求項15記載の方法。
- 前記電極間でのアーキングを回避するために前記1対の電極に油を含浸するステップをさらに含む、請求項11記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/958,678 US7852611B2 (en) | 2007-12-18 | 2007-12-18 | High capacitance film capacitor system and method for manufacturing the same |
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JP2009152590A true JP2009152590A (ja) | 2009-07-09 |
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US (1) | US7852611B2 (ja) |
EP (1) | EP2073225A1 (ja) |
JP (1) | JP2009152590A (ja) |
CN (1) | CN101465208B (ja) |
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- 2008-12-11 JP JP2008315174A patent/JP2009152590A/ja active Pending
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US8524133B2 (en) | 2009-11-13 | 2013-09-03 | Shin-Etsu Polymer Co., Ltd | Method for manufacturing resin film for thin film-capacitor and the film therefor |
US8715554B2 (en) | 2010-03-08 | 2014-05-06 | Shin-Etsu Polymer Co., Ltd. | Method for manufacturing resin film for thin film-capacitor and the film therefor |
Also Published As
Publication number | Publication date |
---|---|
US20090154057A1 (en) | 2009-06-18 |
CN101465208A (zh) | 2009-06-24 |
US7852611B2 (en) | 2010-12-14 |
EP2073225A1 (en) | 2009-06-24 |
CN101465208B (zh) | 2012-09-26 |
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