JP2009132991A5 - - Google Patents
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- Publication number
- JP2009132991A5 JP2009132991A5 JP2008227210A JP2008227210A JP2009132991A5 JP 2009132991 A5 JP2009132991 A5 JP 2009132991A5 JP 2008227210 A JP2008227210 A JP 2008227210A JP 2008227210 A JP2008227210 A JP 2008227210A JP 2009132991 A5 JP2009132991 A5 JP 2009132991A5
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- inches
- nitride ceramic
- cover substrate
- ceramic cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 claims 24
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 24
- 239000000758 substrate Substances 0.000 claims 20
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims 5
- 239000011224 oxide ceramic Substances 0.000 claims 4
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims 2
- 230000003746 surface roughness Effects 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97025007P | 2007-09-05 | 2007-09-05 | |
| US60/970,250 | 2007-09-05 | ||
| US97075707P | 2007-09-07 | 2007-09-07 | |
| US60/970,757 | 2007-09-07 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009132991A JP2009132991A (ja) | 2009-06-18 |
| JP2009132991A5 true JP2009132991A5 (enExample) | 2012-12-20 |
| JP5683063B2 JP5683063B2 (ja) | 2015-03-11 |
Family
ID=40432168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008227210A Active JP5683063B2 (ja) | 2007-09-05 | 2008-09-04 | 窒化アルミニウム又は酸化ベリリウムのセラミックカバーウェハ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8252410B2 (enExample) |
| JP (1) | JP5683063B2 (enExample) |
| KR (1) | KR101099892B1 (enExample) |
| CN (1) | CN104674183A (enExample) |
| SG (1) | SG150492A1 (enExample) |
| TW (1) | TWI447791B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7371467B2 (en) * | 2002-01-08 | 2008-05-13 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
| US7297247B2 (en) * | 2003-05-06 | 2007-11-20 | Applied Materials, Inc. | Electroformed sputtering target |
| US8968537B2 (en) | 2011-02-09 | 2015-03-03 | Applied Materials, Inc. | PVD sputtering target with a protected backing plate |
| CN102553867A (zh) * | 2012-02-17 | 2012-07-11 | 上海先进半导体制造股份有限公司 | 等离子刻蚀设备反应腔室的干法清洗方法 |
| US9850573B1 (en) | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
| US10600624B2 (en) | 2017-03-10 | 2020-03-24 | Applied Materials, Inc. | System and method for substrate processing chambers |
| US10636628B2 (en) | 2017-09-11 | 2020-04-28 | Applied Materials, Inc. | Method for cleaning a process chamber |
| US10312076B2 (en) | 2017-03-10 | 2019-06-04 | Applied Materials, Inc. | Application of bottom purge to increase clean efficiency |
| US10975469B2 (en) | 2017-03-17 | 2021-04-13 | Applied Materials, Inc. | Plasma resistant coating of porous body by atomic layer deposition |
| JP6914170B2 (ja) * | 2017-11-07 | 2021-08-04 | 日本特殊陶業株式会社 | セラミックス基材の保護方法 |
| US10766057B2 (en) * | 2017-12-28 | 2020-09-08 | Micron Technology, Inc. | Components and systems for cleaning a tool for forming a semiconductor device, and related methods |
| CN113924387A (zh) * | 2019-05-22 | 2022-01-11 | 应用材料公司 | 用于高温腐蚀环境的基板支承件盖 |
| JP7654636B2 (ja) * | 2019-08-15 | 2025-04-01 | マテリオン コーポレイション | 酸化ベリリウムペデスタル |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
| JPH0555184A (ja) * | 1991-08-27 | 1993-03-05 | Fujitsu Ltd | クリーニング方法 |
| US5240555A (en) * | 1992-04-16 | 1993-08-31 | Eastman Kodak Company | Method and apparatus for cleaning semiconductor etching machines |
| US5366585A (en) * | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
| US5493305A (en) * | 1993-04-15 | 1996-02-20 | Hughes Aircraft Company | Small manufacturable array lattice layers |
| US5705080A (en) * | 1994-07-06 | 1998-01-06 | Applied Materials, Inc. | Plasma-inert cover and plasma cleaning process |
| TW283738B (en) * | 1994-09-17 | 1996-08-21 | Nat Science Council | A new sintering process for A&N powder coated with Al film |
| US5810937A (en) * | 1996-03-13 | 1998-09-22 | Applied Materials, Inc. | Using ceramic wafer to protect susceptor during cleaning of a processing chamber |
| JP3983362B2 (ja) * | 1997-12-10 | 2007-09-26 | 日本碍子株式会社 | 多孔質複合セラミックス、及びその製造方法 |
| JPH11186168A (ja) * | 1997-12-22 | 1999-07-09 | Kyocera Corp | ウエハ保持面の保護カバー |
| US5895974A (en) * | 1998-04-06 | 1999-04-20 | Delco Electronics Corp. | Durable substrate subassembly for transistor switch module |
| US6127727A (en) * | 1998-04-06 | 2000-10-03 | Delco Electronics Corp. | Semiconductor substrate subassembly with alignment and stress relief features |
| US6186661B1 (en) * | 1998-09-11 | 2001-02-13 | Vatell Corporation | Schmidt-Boelter gage |
| US6328041B1 (en) * | 1998-09-18 | 2001-12-11 | International Business Machines Corporation | Universal cleaning wafer for a plasma chamber |
| US6159333A (en) * | 1998-10-08 | 2000-12-12 | Applied Materials, Inc. | Substrate processing system configurable for deposition or cleaning |
| JP2001118664A (ja) * | 1999-08-09 | 2001-04-27 | Ibiden Co Ltd | セラミックヒータ |
| JP3381909B2 (ja) * | 1999-08-10 | 2003-03-04 | イビデン株式会社 | 半導体製造・検査装置用セラミックヒータ |
| EP1231820A1 (en) * | 2000-05-02 | 2002-08-14 | Ibiden Co., Ltd. | Ceramic heater |
| JP2002160974A (ja) * | 2000-11-22 | 2002-06-04 | Ibiden Co Ltd | 窒化アルミニウム焼結体、窒化アルミニウム焼結体の製造方法、セラミック基板およびセラミック基板の製造方法 |
| ES2717849T3 (es) * | 2001-03-08 | 2019-06-25 | Alstom Transp Tech | Sustrato para circuito electrónico de potencia y módulo electrónico de potencia que utiliza dicho sustrato |
| JP2003023239A (ja) * | 2001-07-05 | 2003-01-24 | Sumitomo Electric Ind Ltd | 回路基板とその製造方法及び高出力モジュール |
| US7060622B2 (en) * | 2002-09-27 | 2006-06-13 | Oki Electric Industry Co., Ltd. | Method of forming dummy wafer |
| JP2005197391A (ja) * | 2004-01-06 | 2005-07-21 | Ibiden Co Ltd | プラズマ発生装置用電極埋設部材 |
-
2008
- 2008-09-04 JP JP2008227210A patent/JP5683063B2/ja active Active
- 2008-09-04 US US12/204,240 patent/US8252410B2/en active Active
- 2008-09-05 SG SG200806483-4A patent/SG150492A1/en unknown
- 2008-09-05 CN CN201510086873.3A patent/CN104674183A/zh active Pending
- 2008-09-05 KR KR1020080087845A patent/KR101099892B1/ko not_active Expired - Fee Related
- 2008-09-05 TW TW097134232A patent/TWI447791B/zh not_active IP Right Cessation
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