TW283738B - A new sintering process for A&N powder coated with Al film - Google Patents

A new sintering process for A&N powder coated with Al film Download PDF

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TW283738B
TW283738B TW83108564A TW83108564A TW283738B TW 283738 B TW283738 B TW 283738B TW 83108564 A TW83108564 A TW 83108564A TW 83108564 A TW83108564 A TW 83108564A TW 283738 B TW283738 B TW 283738B
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aluminum
temperature
aluminum nitride
sintering
sintered body
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TW83108564A
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Chinese (zh)
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Nan-Jiun Wu
Huey-Rong Wang
Shinn-Jyi Chen
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Nat Science Council
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Abstract

This patent application discloses a new process for preparing a sintering body with relative density greater than 95% can be observed on the specimens generate from AlN powder coated with Al film and sintered at 1650-1750 deg.C.

Description

283738 ^ 85.5.^ 補充“ Λ a A7 B7 五、發明説明() 1 随著電子產品小型化、輕量化之需求,使半導體X業 上對於積體電路及電子系統等顛產品均朝向高集精密度、 高機能、高速度、高出力化之方向發展,因此對於衣載此 等電子零紐件基板之要求度亦曰趨嚴格。—般對於封裝電 5 予紐件基板材料之要求有下列各點:丨.具有高度乏熱傳 導率,2·熱膨脹係數應與半導體元件(cwp)材料如矽單 晶之熱膨脹係數接近,3.介電常數與損耗因子應較低, 4.較高之絶緣電阻。 10 15 目前能符合該等特性要求之基板材料,约可區分爲二 類,其一係以氣化钇一破璃系(i>〇_Sin?_Mg〇_BrL)、成 BaSn (B(Lh等成份爲主要材質經低溫燒結方式製造之基板 。惟該系列材剩之熱膨脹係數、介電率、損耗因子、高絶 緣電限皆能符合上述條件,但淇熱傳導率較低成爲一大缺 點。然而卻由於製造成本低,以及易於製成锖厣基板,遂 令瘢商仍樂意於開發此類材質之基板之基板。 m HI I - I mf tn ^ nn V J -Λτ^ ,-口 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社印製 另一類屬於高熱傳導性之材質,随著積體電路集積密 度之浞高與高功能化,電腦己由一普通積體晶體(IC)進展 至LSI或甚至於VLSI。冈此其運轉之際•約可產生每平方 公分2瓦特(W)之熱量,此等熱量表能消散導致足以整個 細路無法正常運作。是以含有諸如氧化皱(如⑴、碳化發( SiC)、氮化鋁(AlN) f高熱傳導率之基板質材乃應運而生 24 此類材質中氧化鈹之熱傳導率雖然可達到24〇 w/nrk頗 20 2 ^83738 五、發明説明() 1 爲理想,但因木身含有劇毒無法普遍,曰前僅有一家碌商 尚在製造。以碳也矽爲基板之材質其熱傳導牟约高達270 w/m.k,而於製造中尚需添加1 wt%氧化鈹(Be〇)以助其 於1900 t:左右進行燒結,且須在燒結中使用熱壓法,由 5 於含有毒性化合物炎不理想,僅有日立公司生產。至於氮 化招爲材質由於具有高度之熱傳導又可於常壓下以添加燒 結助劑方式,於1300它下進冇燒結成爲緻密之燒結體。 係爲Η前爲止最理想之材質,因此以該等材質爲基板遂成 爲各廠商;5L研究機構研究與開發之Η標。 10 然而實用上氮化鋁(Aj(N)存在著一些難題•例如不添 加澆結助劑之惰沉下,必須约在24〇〇 t:溫度方能獲得較 佳之燒結玆,因此該類材質常利用熱壓法以製備成诞密態 。最近HOBUYUKI'KIJRAMOTO 筹人於Advance ]·η Ceramics 15第26卷第107頁迷夂利用控制粉末粒徑大小令其介於平均 粒徑1.5 w m以及粒徑分布大於5 α π之粉末至少佔5容 積I分率,於〗,900 °C溫度下可獲得99%理論密度之純 經濟部中央橾準局員工消費合作杜印製 (請先閲讀背面之注意事項再填寫本頁) 氮化鋁燒结體。而M.HIRAN0等人於1993年J.Mat.Sd.第 28卷第4725-30買報告於常壓下以持續8小呤ι,9〇〇七 20溫度可獲得半透明之氮化鋁燒结體,其相對密度達99.6% 〇 根據 Jul ins C. SCHUSTER 等人於 1987 年 Revne 如 24 Chimie·第24卷第676頁之論文所迷•應以下列原則選揮 3 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 五、發明説明( 5 10 15 f 5. 年 A7 B7 適當燒结助劑,方能於常壓下製備緻密之氮化鋁燒結體。 1.於燒结過程中具備與氮化鋁發生化學共容性之物質一 亦即在高溫時能與氮化鋁反應生成新固相或形成固溶體之 材質均不適用。2.在2,000 K溫度左右具有形成液相加 速趟密化之物質一即使將固態氮化鋁置於分解溫度時,其 擴散係數仍低,因此需添加此類燒结助劑。3.擁有高電 阻之物質一以避免氮化鋁之晶體界面受少數相影響其氮化 鋁燒结後之絶緣性。 經濟部中央標隼局員工消費合作杜印製 20 24 目前從事氮化鋁基板·材料之開#,有東芝、德 山曹達、曰本電氣、住友金屬、海瑞士(此reaus)等公司 ,及一些研究機構。其間所運用之燒結助劑有各種氧化物 、氟化物、氣化物等物質,對於氮化鋁燒结之影響情形分 別钦迷如下。 朿芝公司爲改善於常壓狀態下氮化鋁(从N)難以繞結 之缺點,於製備過程添加燒結助劑,以液相燒結方式 燒成緻密之燒結體,則該所添加之該燒結助劑最後以形成 MG(3Y2〇3 · 5ΑΙ2〇.〇相或呈現γΑι〇3相積存於結晶粒界面 之交會處,足以造成整體熱傳導率受影黎之現象。該公司 以東生内帖(Tosnite)之品牌銷售,其熱傳嗥率约爲]〇〇 V/m · Κ υ 而其综合研究所亦發現氮化鋁(从^之有效燒結助劑283738 ^ 85.5. ^ Supplement "Λ a A7 B7 V. Description of invention () 1 With the demand for miniaturization and weight reduction of electronic products, semiconductor X industry is facing high-precision precision products such as integrated circuits and electronic systems. The requirements for high-performance, high-performance, high-speed, and high-efficiency development have increased, so the requirements for mounting these electronic zero-component substrates are becoming stricter. In general, the requirements for packaging electrical components for the substrate materials are as follows: Points: 丨. Has a high thermal conductivity, 2. Thermal expansion coefficient should be close to the thermal expansion coefficient of semiconductor component (cwp) materials such as silicon single crystal, 3. Dielectric constant and loss factor should be low, 4. High insulation resistance 10 15 Substrate materials that currently meet these requirements can be roughly divided into two categories, one of which is vaporized yttrium and broken glass (i> gt_〇Sin? _Mg〇_BrL), into BaSn (B ( Lh and other components are the main materials of the substrate manufactured by low temperature sintering. However, the remaining thermal expansion coefficient, dielectric constant, loss factor, and high insulation limit of this series of materials can meet the above conditions, but the low thermal conductivity of Qi becomes a major disadvantage. However, due to Because of the low cost and the ease of making substrates, scar merchants are still willing to develop substrates of such materials. M HI I-I mf tn ^ nn VJ -Λτ ^, -port (please read the back side first (Notes to fill out this page) Another type of material with high thermal conductivity is printed by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs. With the high and high functional density of integrated circuits, the computer has been made of a common integrated crystal (IC) progressed to LSI or even VLSI. During its operation, it can produce about 2 watts per square centimeter (W) of heat. These heat meters can dissipate and cause the entire path to fail to function properly. Such as oxidized wrinkles (such as ⑴, carbide (SiC), aluminum nitride (AlN) f high thermal conductivity substrate material was born at the historic moment 24. The thermal conductivity of beryllium oxide in such materials can reach 24〇w / nrk quite 20 2 ^ 83738 V. Description of the invention () 1 is ideal, but because the wood body contains highly toxic substances, it is not common, and only one businessman is still manufacturing it before. The material with carbon and silicon as the substrate has a thermal conductivity of up to 270 w / mk, and still need to add 1 wt% oxygen in manufacturing Beryllium (Be〇) helps it to be sintered around 1900 t: and must use hot pressing during sintering. It is not ideal for containing toxic compounds. It is produced only by Hitachi. High thermal conductivity can be added to the sintering aid at normal pressure, and it can be sintered under 1300 to form a dense sintered body. It is the most ideal material until H, so these materials are used as substrates to become various manufacturers ; 5L research institute research and development of the H standard. 10 However, in practice, aluminum nitride (Aj (N) there are some problems • For example, the inert sinking without the addition of pouring aids, must be about 24〇t: temperature Can obtain better sintering, so this kind of material is often prepared by hot pressing method into a dense state. Recently, HOBUYUKI'KIJRAMOTO was co-founded in Advance] · η Ceramics 15 Vol. 26, page 107. The powder used to control the particle size of the powder to have an average particle size of 1.5 wm and a particle size distribution greater than 5 α π accounted for at least 5 volumes I score, at〗, at a temperature of 900 ° C, 99% of the theoretical density can be obtained, the pure consumption of the Central Ministry of Economic Affairs of the Ministry of Economic Affairs, consumer cooperation du printing (please read the precautions on the back before filling out this page) aluminum nitride sintering body. And M.HIRAN0 et al., 1993, J. Mat. Sd. Vol. 28, No. 4725-30, reported that translucent aluminum nitride sintering can be obtained under atmospheric pressure to last for 8 min. It has a relative density of 99.6%. According to the paper by Jul ins C. SCHUSTER et al. Revne in 1987, such as 24 Chimie · Volume 24, page 676 • The following principles should be selected. Standard (CNS) A4 specification (210X297mm) 5. Description of the invention (5 10 15 f 5. Year A7 B7 Appropriate sintering aids, in order to prepare dense aluminum nitride sintered body under normal pressure. Substances that have chemical compatibility with aluminum nitride during the bonding process, that is, materials that can react with aluminum nitride to form a new solid phase or form a solid solution at high temperatures are not suitable. 2. At about 2,000 K Substances that form liquid phase to accelerate the densification-even when solid aluminum nitride is placed at the decomposition temperature, its diffusion coefficient is still low, so such sintering aids need to be added. 3. Substances with high resistance to avoid nitriding The crystal interface of aluminum is affected by a few phases and its insulation after sintering of aluminum nitride. Central Ministry of Economic Affairs Falcon The bureau employee consumer cooperation Du Printing 20 24 is currently engaged in the development of aluminum nitride substrates and materials. There are companies such as Toshiba, Tokuyama Takada, Japan Electric, Sumitomo Metal, and Hai Switzerland (this reaus), as well as some research institutions. The sintering aids used are various oxides, fluorides, vapors and other substances. The effects on the sintering of aluminum nitride are as follows. For the improvement of aluminum nitride under normal pressure (from N) The shortcomings of being difficult to entangle, add a sintering aid in the preparation process, and fire the dense sintered body by liquid phase sintering, then the added sintering aid finally forms the MG (3Y2〇3 · 5ΑΙ2〇.〇 phase or It shows that the γΑι〇3 phase accumulates at the intersection of the crystal grain interface, which is enough to cause the overall thermal conductivity to be affected. The company sells it under the Tosnite brand, and its heat transfer rate is about] 〇〇V / m · Κ υ and its comprehensive research institute also found aluminum nitride (from ^ effective sintering aid

II— 一 装 i {冰 (請先閲讀背面之注意事項再填寫本頁) '38 修 #1*1II— One pack i {Bing (please read the notes on the back before filling this page) '38 修 # 1 * 1

五、 、發明説明( 1除:了H與氧化#5(Ca〇)外,更有含稀土類氟化物之γί?3 二添加3針'%之YPS於1,800 ΐ:溫度、常壓下之氮氣中柃 =結2小時,可擭得熱傳導率爲180 W/m.k之基板。 、相同條件添加7 wt%之他亦可獲待熱傳導率爲17〇 5 WAn · k之基板。兩種燒结體均可在不同结晶粒界之交會處 或粒界處出現YAG、刪3、Α1Λ〇9等異類相,益隨著所 增添丫2〇3含量呈現正比之增加度。以择描式電予顯徵鏡 觀察(SEM)堍結體可知所添加} wt%之〜〇3係以液相積 存於粒界,且添加3 wt%其積存於粒界3重接合點之狀態 10下獲致之燒结體,其所擁有之熱傳導率較添加量爲工 更佳。 (請先閲讀背面之注意事項再填寫本頁) A-衣 德山曹達公司,開發以還原氮化法製作一次粒子徑约 爲0.6 "m,凝集後平均粒徑约爲14 氮化鋁(辟N) 15粉末技術。經熱壓法於175〇 c溫度無添加燒結助劑之狀 慼燒成蜒密體,而浞高溫度至1,9⑻〜2,〇如t之常壓 τ進衧燒姑*其燒結體緻密化之程度可達理論密度之95% 而熱傳舉率爲140 W/VK。而倉元信行更以Ca(N〇3h 燒結助劑,發現鋁酸鈣相於燒結過程中有揮散之現象, 20 1,800 °C持溫3小時可繞结得缺密之燒結體。 往·左金屬工業中央技術研究所高尾哲曾研究燒结體结 晶粒子徑與熱傳導率之關係,發現具有高熱傳導率之燒結 24體具有微細之構造。添加〇.5〜3 v/t%之匕〇3爲燒結助劑 5 本紙張尺度適用中國國家標李(CNS ) Α4規格(210X297公釐)V. Description of the invention (1 In addition to: H and oxidation # 5 (Ca〇), there are also γί? 3 containing rare earth fluorides. 2. Add 3 needles of 3% of YPS at 1,800 l: temperature and normal pressure. N2 = junction for 2 hours in nitrogen, a substrate with a thermal conductivity of 180 W / mk can be obtained. The substrate with a thermal conductivity of 17〇5 WAn · k can also be obtained by adding 7 wt% under the same conditions. Two kinds of sintering All kinds of different phases such as YAG, X3, Α1Λ〇9, etc. can appear at the intersection of different crystal grain boundaries or at the grain boundaries, and the benefit shows a proportional increase with the added content of γ2〇3. Observational microscopic observation (SEM) of the knot body shows that the addition of} wt% of ~ 〇3 is accumulated in the liquid phase in the grain boundary, and the addition of 3 wt% is stored in the grain boundary 3 junctions in the state of 10 burn The thermal conductivity of the structure is better than that of the added amount. (Please read the notes on the back before filling out this page) A-Yideshan Caoda Co., Ltd., develops a primary particle diameter of about 1 0.6 " m, the average particle size after agglomeration is about 14 Aluminum Nitride (N) 15 powder technology. No sintering aid added by hot pressing method at 175 ℃ It forms a serpentine dense body, while the high temperature reaches 1,9⑻ ~ 2, 〇 such as t at atmospheric pressure τ into the sintered body * its sintered body can be densified to 95% of the theoretical density and the heat transfer rate is 140 W / VK. Cangyuan Xinxing even used Ca (N〇3h sintering aids and found that the calcium aluminate phase was sintered during the sintering process. 20 1,800 ° C for 3 hours can entangle the dense sintered body. · Zuo Metal Industry Central Institute of Technology Gao Weizhe studied the relationship between the sintered body crystal particle diameter and thermal conductivity, and found that the sintered body with high thermal conductivity has a fine structure. Add 0.5 ~ 3 v / t% dagger 〇3 is a sintering aid 5 This paper scale is applicable to China National Standard (CNS) Α4 specification (210X297mm)

'1T 經濟部中央標隼局員工消贫合作社印裝 爲 於 £ 8'1T Ministry of Economic Affairs Central Standard Falcon Bureau Employee Poverty Alleviation Cooperative Printed for £ 8

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73S 1 、發明説明( 將燒结溫度詨定爲l,7〇〇 PC、l,8〇〇 t、l,9〇〇 °C ,分別 於氮札中以常壓掩结3小時。經TgM與掃描式電子顚微鏡 (SEM)觀察可發現在粒界3重接合點之處會有yag相存在 ,其結果與上迷東芝公司一致。而燒結體於添加3社%之 以1,900 C溫度燒结所獲得之燒結體,具有122 w/ k之熱傳導率。 m 經濟部中央標準局員工消費合作杜印製 而Thomas B.等人於]9δ9 年J.Ara.Ceram.Soc.第22 卷 第8期第489-91頁發表同時添加由γ2〇3、氧化鈣(ca〇)、 IOUWh、氧化鈽(ce〇2)、二氧化矽(Si〇2)混合之燒结助 劑,可在1,600 t溫度下燒成緻密體係較具特色之方法。 目前氮化鋁燒结忮術於產業界之發展情形,分述於各 專利中;德山曹達公司於1992年之特開平4一92868號曰 15本專利揭示,於氮化鋁粉體中添加5 wt%之Υ2〇3與 有機结合劑,將成形之薄片刮刀表面塗佈高融點之金屬粉 膠體,於氮氣中1,800 C溫度加熱燒結5 hr.製備燒結體 之方法。京都陶瓷公司於1⑽1年之特開平3—1Q3,56Q號 日本專利揭示以氮化鋁爲主成分添加〇.1〜1 5 wt %稀土 20類鋁化合物,及含有金屬鈿或經炭化之鈿組成之黑色劑, 於氮氣中以1,820 t:溫度加熱燒結3 hr*形成黑色之氮化 鋁燒結體。 24 東芝公司於1991年之特開平3 —279264號日本專利揭6 (請先閲讀背面之注意事項再填寫本頁) 笨. -4 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐〉 ?8, A7 B7 經濟部中央橾準局員工消費合作社印製 五、發明説明() 1示,將氮化鋁粉末成型而不添加燒结助劑’先於700 °C溫 度除去黏结劑。於常壓(1 atm)下導入氮氣經熱壓(HP)柃 續於1800 t溫度.燒結4 hr 4再置入炭蚶堝中升高溫度至 1,900 t溫度熱處理6 hr製成髙熱傳導性·燒結體之製迻 5方法。於1992年之特開平4一46060號有關著色氮化鋁燒 结體及其製造方法專利,係於氮化鋁中添加後土類化合物 及0.5〜10 wtk稀土類化合物 > 於氮氣中以1,奶〇 °c溫 度燒结48 hr。 10 川岭製鐵公司於1992年之特開平4一0172號日本專利 揭示,於氮化硼(BN)或氮化硼與氮化鋁容器内添加5 wt% 成形體之γ2〇3以1,9〇〇 °c溫度燒紬4 hr。住友電氣工業 公司於1992年之特開平4一92867號有關高熱傳導性著色 氮化銘燒結體及其製法之專利,係於氮化鋁中添加〇 〇5〜 15 0.5 v/t%含碳硼之化合物、〗wt%以下稀土類鋁酸物、 〇.〇1〜15社%至少1種以上選自周期表中ivr、vb、 VIB族元素之化合物,經燒結成具有色澤之燒結體。乾拿 枯斯公司(株式會社卜MM)於臓年之特開平4巧 6503號日本相揭示,祕氮雜(副)_之表面被後 20 -省躺防止氮化紹與水分發生反應之方法。 中之資料,可知日前大部分之11化轉々方式除其 “ 4一 46060號牟利不添加燒結助劑較爲特殊外 24,其餘皆抹用添加氧化物或非氧化物之燒結助劑,而控制 (請先閱讀背面之注意事項再填寫本頁) (η裝 _ 訂 •LO. 773S 1. Description of the invention (The sintering temperature is set to 1,700 PC, 1,800 ° T, 1,900 ° C, respectively, and it is masked in nitrogen for 3 hours at normal pressure. After TgM Observation with scanning electron microscopy (SEM) shows that there is a yag phase at the triple junction of the grain boundary, and the results are consistent with the Toshiba company. The sintered body is added at a temperature of 1,900 C at 3% The sintered body obtained by sintering has a thermal conductivity of 122 w / k. M Printed by the Consumer Cooperation Cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs and printed by Thomas B. et al.] 9δ9 J.Ara.Ceram.Soc. Volume 22 The 8th issue, pages 489-91, was published with the addition of sintering aids mixed with γ2〇3, calcium oxide (ca〇), IOUWh, plutonium oxide (ce〇2), and silicon dioxide (Si〇2). The characteristic method of firing the dense system at 1,600 t. The current development of aluminum nitride sintering technology in the industry is described in various patents; Deshan Caoda Co., Ltd. 1992 No. 4928928 This patent discloses that adding 5 wt% Υ203 and organic binder to aluminum nitride powder, coating the surface of the formed blade with high melting point metal powder glue The body is heated and sintered in nitrogen at 1,800 C for 5 hr. A method for preparing a sintered body. Kyoto Ceramics Japanese Patent No. 3-1Q3,56Q, published in 1⑽ 1 year, discloses that aluminum nitride is the main component added by 0.1. ~ 1 5 wt% rare earth 20 aluminum compound, and a black agent containing metal thallium or carbonized thallium, sintered in nitrogen at 1,820 t: temperature for 3 hr * to form a black aluminum nitride sintered body. 24 Toshiba Corporation Japanese Patent Disclosure No. 3-279264 No. 3-279264 published in 1991 (please read the precautions on the back before filling in this page). Stupid. -4 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) , A7 B7 Printed by the Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs 5. Description of the invention () 1 shows that the aluminum nitride powder is molded without the addition of sintering aids. The binder is removed before 700 ° C. At normal pressure Introduce nitrogen gas at (1 atm) and continue at a temperature of 1800 t through hot pressing (HP). Sinter for 4 hr 4 and place it in a carbon clamshell to raise the temperature to 1,900 t for heat treatment for 6 hr to make a high thermal conductivity sintered body 5 methods of preparation and transfer. In 1992, Japanese Patent No. 446060 on coloring nitrogen The patent for aluminum sintered body and its manufacturing method is based on the addition of earth compounds and 0.5 to 10 wtk rare earth compounds to aluminum nitride> sintering in nitrogen at 1, milk 0 ° C for 48 hr. 10 Chuanling Japanese Patent Publication No. Hei 4-0172 of 1992 by the Iron and Steel Co., Ltd. discloses that adding 5 wt% of the molded body of γ2〇3 to 1,90 in boron nitride (BN) or boron nitride and aluminum nitride containers ° C temperature burned for 4 hr. The patent of Sumitomo Electric Industries Co., Ltd. in 1992, No. 4-92867, regarding the high thermal conductivity coloring nitride sintered body and its manufacturing method, is the addition of 〇05 ~ 15 0.5 v / t% carbon-containing boron to aluminum nitride Compounds, rare-earth aluminates below 0.01% by weight, at least 0.01% to 0.15%, at least one or more compounds selected from the elements of group ivr, vb, and VIB in the periodic table are sintered to form a sintered body with color. Kanamakis Co., Ltd. (MM) Co., Ltd. revealed the Japanese phase of the Japanese Patent No. 4Q6503, the surface of the secretive aza (sub) is protected by the rear 20-a method for preventing the reaction between the nitrogen nitrate and water . According to the information in the data, it can be seen that most of the 11-day conversion methods in the past except its "No. 446060 profit-making without adding sintering aids are more special 24, the rest are all added with sintering aids with oxides or non-oxides, and Control (please read the precautions on the back before filling in this page) (η 装 _ Order • LO. 7

經濟部中央標孪局員工消費合作杜印製 1於1800 °C以上之溫度進行液相燒結。於此等製佛方法中 添加諸如YHaO…等氧化物系,或PY、PL、Yc等非 氧化物系之類異質燒结助劑,導致該化合物形成他種相存 留於氮化鋁(AKN)燒结體内,而降低熱傳導率之現象。該 5等製#過程即使添加燒结助劑,仍需於18〇〇 t以上之燒 結溫度方能獲得緻密之燒结體。於埯结過程中添加歸屬於 有機物質之黏结劑,即使花費相當多之時間以進行脱碳工 作,仍然有游離碳殘留而影辇基板品質之現象。 10 本發明者有鑑於此,經銳意檢纣、研究,结果發現僅 在氮化鋁(ΑΪΝ)粉體顆粒之表面被後一層鋁(ΑΪ)蹊,經成 形機成形或初步成形再施以冷均壓,不必添加住何之燒结 助劑即可獲得致密燒結體之方法。該法不必添加繞结助劑 .*不使用枯結劑等有機物,因此並無他種相存留於氛化銘 15燒结體,即使不需經長時間脱碳亦不致有殘留碳之困擾, 對於燒结體之熱傳導率以及基板品質均不受其影窣。本發 明方法之燒結溫度僅在1650〜1750 t與目前之1800 t: 較低,且持溫3〜6小時即可燒成緻密之燒結體,其緻密 度可接近理論值。 20 本發明於氮化鋁(AtN)粉體顆粒表面被後鋁(Aj〇膜* 係利用真空蒸鍍薄膜之簡單方式,於短時間内可輕易地於 氮化鋁粉體顆粒表面被霞一膺鋁膜。被覆鋁腹之方式可由 24 A.Grisei等人於1989年Chem.Sen.Tech·第2期所揭示之 8 本紙張尺度適用中國國家橾华(CNS > Α4規格(210XW7公釐> (請先閲讀背面之注意事項再填寫本頁) 裝Du Printing Co., Ltd. Employee Consumption Cooperation of the Central Standards Bureau of the Ministry of Economic Affairs 1 Liquid phase sintering at a temperature above 1800 ° C. Addition of oxide systems such as YHaO ..., or non-oxide systems such as PY, PL, Yc, etc. to these Buddha preparation methods, resulting in the formation of other phases of the compound and remaining in aluminum nitride (AKN) The phenomenon of reducing thermal conductivity in the sintered body. Even if the sintering aid is added in the 5th-level manufacturing process, a sintered body with a sintered body of more than 1800 t can be obtained. Adding a binder attributed to organic substances during the bonding process, even if it takes a considerable amount of time to carry out the decarburization work, there is still a phenomenon that free carbon remains and affects the quality of the substrate. 10 In view of this, the inventor has made a keen inspection and research, and found that only the surface of the aluminum nitride (ΑΪΝ) powder particles is covered by a subsequent layer of aluminum (ΑΪ), which is formed by the forming machine or preliminary forming and then cooled. Pressure equalization, a method for obtaining a dense sintered body without adding any sintering aid. This method does not require the addition of entanglement aids. * No organic materials such as sintering agents are used, so no other phases remain in the sintered body of Xinghua Ming 15, even if it does not need to be decarburized for a long time, it will not be troubled by residual carbon The thermal conductivity of the sintered body and the quality of the substrate are not affected by it. The sintering temperature of the method of the present invention is only 1650 ~ 1750 t and the current 1800 t: it is lower, and the dense sintered body can be fired at a holding temperature of 3 ~ 6 hours, and the density can be close to the theoretical value. 20 The present invention is applied to the surface of aluminum nitride (AtN) powder particles after being coated with aluminum (Aj〇 film *), which is a simple way to use vacuum evaporation film, which can be easily coated on the surface of aluminum nitride powder particles in a short time Aluminium film. The method of covering the aluminum belly can be revealed by 24 A. Grisei et al. In 1989 Chem. Sen. Tech. No. 2 8 This paper size is applicable to China National Hua (CNS &A; A4 specifications (210XW7 mm > (Please read the precautions on the back before filling out this page)

283738五、發明説明( 滅鍵法(sputtering),或其他諸如浸溃塗佈&(dipping)、 旋轉塗佈法(spin coation)之類習知链膜忮術•該等鍵膜 時間稍長。適用於本發明之氮化鋁(⑽N)粉末可依各種方 式製備,例如經還原氮化法製備,或將金屬鋁粉加熱氮化 之粉末或運用氣相法製侑之氮化鋁粉末,火焰法或其他之 被覆。 經濟部中央標隼局員工消費合作社印裝 本發明氮化鋁表面被覆鋁膜之製造方法,保有關氮化 紹粉體被覆金屬鋁腹經低溫獲得燒結體之製造方法,主要 10之目的在於無須添加燒结助劑,並能以較低之溫度獲得更 純達到緻密皮之燒結體。 本發明氮化鋁表面被覆鋁膜之製造方法,其次之|{的 在於不需藉助他種異質燒結助剩而達到降低燒結溫度,因 15此燒結體並無他種相殘留,是以不虞燒結體之熱傳導率、 或品質受其影f。 本發明氮化鋁表面被覆鋁腹之製造方法,其主要之製 造流程如圖一所示,原料之氮化鋁(A〖N)粉末可依各種方 20式製備’經由還原氮化法製镛,或將金屬鋁粉加熱再行氛 化之方式·或運用氣相法製備之。兹粉末之平均粒徑只有 0.7⑽容易因静電吸附作用產生凝聚現象,須先筛除過 大之凝聚體,其篩絪大於100號篩所產生之粉末過細,於 24被覆鋁膜後之製程籾體易於再凝聚;若網目太小則凝聚體 9 本紙張尺度適用中國國家橾芈(CNs ) A4规格(210X297公釐) (請先閱讀背面之注意事項再填寫本I) 装.283738 V. Description of the invention (sputtering, or other conventional chain film pudding such as dip coating & (dipping), spin coating method) • These key films take a little longer. Applicable The aluminum nitride (⑽N) powder in the present invention can be prepared in various ways, for example, by reduction nitridation method, or by heating and nitriding the aluminum metal powder, or using the gas phase method to prepare the aluminum nitride powder, flame method or Other coating. The manufacturing method of the aluminum nitride surface coated aluminum film of the present invention printed by the Central Standard Falcon Bureau Employee Consumer Cooperative of the Ministry of Economy guarantees the manufacturing method of the sintered body obtained by the low temperature of the nitrided powder coated metal aluminum belly at low temperature, mainly 10 The purpose is to not need to add sintering aids, and can obtain a more pure sintered body to achieve a compact skin at a lower temperature. The manufacturing method of aluminum nitride surface coated aluminum film of the present invention, followed by | The heterogeneous sintering aids to reduce the sintering temperature, because the sintered body has no other phase residues, so it is affected by the thermal conductivity or quality of the sintered body. The aluminum nitride surface of the present invention is coated with aluminum belly Manufacturing method, the main manufacturing process is shown in Figure 1. The raw material aluminum nitride (A 〖N) powder can be prepared according to various methods. The method is prepared by the gas phase method. The average particle size of the powder is only 0.7⑽. It is easy to cause agglomeration due to electrostatic adsorption, and the oversized agglomerates must be sieved first. If the mesh is too small, the fen body can be easily condensed after being coated with aluminum film; if the mesh size is too small, the agglomerate 9 This paper size is applicable to the Chinese national standard (CNs) A4 specification (210X297 mm) (please read the precautions on the back Fill in this I) again.

.1T 經濟部中央標準局員工消費合作社印製 2.83738 A7 B7 五、發明説明() 1之欠小差異大多,影響後暖之均勻性ί楝作中最逋宜之篩 綑爲100號篩絪(mesh) ·過程中呈現之再凝聚現象不嚴重 ,且凝聚體大小差異性不大。 r-^ /' N Γ 粉末篩選 L J 真空蒸鍍 k_— J _> 乾壓成形 L^ r · > 燒结 {a» 广—· 冷均壓 ___> 1〇 圖一製造流程 本發明利用真空蒸鍍法淤氮化鋁粉體顆粒表面被羨鋁 猨,所使用之蒸鍍裝置如蹰二所示,捋氮化鋁粉末放入特 定容器置入真空室,稱取定量之金屬鋁線掛於加熱之鎢絲 15上。進行柚取真空工作,待真空度達1(Γ4〜1(Γ5 torr時 使粉禮進行鍍鋁至所要被後之鋁量。 將被度鋁暖之氮化鋁粉末,以油壓機加壓成型,再以 冷均壓拎壓。犄成形之試片置於舖有氮化硼(BN)粉末之氣 20化硼坩堝中,置入高溫爐以300 X〕去除吸附於及應室器 壁内殘留之氧氣與水氣,然後以99.9%高純度之氮氣· 維持反應室之氣壓爲1.04 atm下,升溫至750C持溫2 hr,而後升至1450 t!挣溫3hr,再升至所設定之溫度持 24溫進行液相麂結。 10 本紙張尺度適用中國國家樣準(CNS ) A4规格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁 「裝· 訂 A7 A7 經濟部中央標隼局員工消費合作杜印製 五、發明説明() 1 上述之製造方法中有關被後鋁暖部价,爲達到真空室 之真空皮,ϋ常先以迴轉式機械幫浦進行粗抽•至真空度 建2〜SXlO^torr,屆時閥門須慢慢開啓以免粉末被 柚出,改用擴散幫浦至真空度低於2〜5X10—4 torr。爲 5達到粉體均勻蒸鍍之效果•粕體需均勻散布於容器經蒸鍵.1T Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 2.83738 A7 B7 V. Description of invention (1) Most of the differences are small, and the most suitable sieve bundle in the work that affects the uniformity of afterheating is the No. 100 sieve ( mesh) · The re-condensation phenomenon presented in the process is not serious, and the size of the condensate is not very different. r- ^ / 'N Γ powder screening LJ vacuum vapor deposition k_— J _ > dry press forming L ^ r · > sintering {a »wide— · cold equalizing pressure ___> 10 The surface of the aluminum nitride powder particles deposited by vacuum evaporation is engraved with aluminum. The evaporation equipment used is as shown in Figure 2. The aluminum nitride powder is placed in a specific container and placed in a vacuum chamber. Weigh a certain amount of metal aluminum wire Hang on the heated tungsten wire 15. Carry out vacuum extraction of pomelo, and when the vacuum degree reaches 1 (Γ4 ~ 1 (Γ5 torr, make the powder to be aluminized to the amount of aluminum to be quilted. The aluminum nitride powder that is warmed by the aluminum is pressed and formed by a hydraulic press. Then press it with cold equalizing pressure. The formed specimens are placed in a gas boron crucible covered with boron nitride (BN) powder and placed in a high-temperature furnace to remove the residue in the wall of the chamber and the chamber. Oxygen and water vapor, then use 99.9% high-purity nitrogen. Maintain the pressure of the reaction chamber at 1.04 atm, raise the temperature to 750C for 2 hr, and then rise to 1450 t! Earn the temperature for 3hr, and then rise to the set temperature Hold liquid at 24 ° C for liquid phase decoction. 10 The paper size is suitable for China National Standard (CNS) A4 (210X297mm) (please read the precautions on the back and then fill in this page "Finishing · Order A7 A7 Central Standard of Ministry of Economic Affairs Falcon Bureau employee consumption cooperation Du Printed V. Description of the invention () 1 In the above manufacturing method, the price of the rear aluminum heating is related. In order to achieve the vacuum skin of the vacuum chamber, ϋ often uses a rotary mechanical pump for rough pumping. The vacuum degree is 2 ~ SXlO ^ torr, and the valve must be opened slowly to prevent the powder from being released. Help the diffusion pump to a vacuum of less than 2~5X10-4 torr. 5 to achieve uniform powder deposition effect of the body need • meal was spread evenly over the vessel steaming bond

鋁猨置冷後將粉體翻面,再次重複蒸鍍達到所要求被覆之 鋁量D 依照本發明氮化鋁表面被後鋁膜之製造方法,所製得 10之氮化鋁試片可測試其生胚密度、燒结體密廑等密度,燒 蛣前後之線性收缩率、比介電常數(k)、損耗因子(fanδ) 、絶緣電阻係數(/〇)、熱傳導率、晶粒大小等物理、電性 之測試》以及運用X光繞射(X-ray diffraction)、掃描 式電子顯微鏡觀察(SEM)、電子微探分析(ΕΡΜΑ)、穿透式 15電子顯徵鏡撖結構分析(STEM)等方法進行歡結構之分析。 分別將起始原料氮化鋁粉末、壓成片狀作爲蒸鍍之金 屬鋁條、被覆鋁塍之氮化鋁粉末、及燒結後之氮化鋁燒結 體進行X光繞射,其結果如圖四所示。於被炎鋁膜之氮化 20鋁粉末之繞射圖中,發現比起始原料氮化鋁之繞射圖内多 出幾個微弱之繞射峰,而該撖弱之繞射峰即爲金屬鋁之繞 射峰位置,證實氮化鋁粉末經蒸鍍後,確有金屬鋁被覆於 上。再觀察燒结飱之繞射圈,可看出試片之徵弱金屬鋁繞 24射峰,於燒结後已完全消失,證明其表面金屬鋁經燒结已 11 (請先閱讀背面之注意事項再填寫本頁) 今After cooling, the aluminum powder is turned upside down, and the evaporation is repeated again to achieve the required amount of coated aluminum. D According to the manufacturing method of the aluminum nitride surface coated aluminum film of the present invention, 10 aluminum nitride test pieces can be tested The density of green embryo, density of sintered body, etc., linear shrinkage rate before and after burning casks, specific dielectric constant (k), loss factor (fanδ), insulation resistance coefficient (/ 〇), thermal conductivity, grain size, etc. "Physical and Electrical Testing" and the use of X-ray diffraction (X-ray diffraction), scanning electron microscope observation (SEM), electron microprobe analysis (ΕΡΜΑ), penetrating 15 electron eigenmirror structure analysis (STEM ) And other methods to analyze the structure of Huan. X-ray diffraction of the starting material aluminum nitride powder, pressed into a sheet shape as a vapor-deposited metal aluminum strip, aluminum nitride powder coated with aluminum alloy, and sintered aluminum nitride sintered body, the results are shown in the figure Four shown. In the diffraction pattern of the aluminum nitride 20 powder of the aluminum film, several weak diffraction peaks are found in the diffraction pattern of the starting material aluminum nitride, and the weak diffraction peak is The diffraction peak position of aluminum metal confirms that after the aluminum nitride powder is vapor-deposited, the metal aluminum is indeed coated on it. Observe the diffraction ring of the sintering ring again, we can see that the test piece is characterized by a weak metal aluminum around the 24 peaks, which has completely disappeared after sintering, proving that the surface metal aluminum has been sintered to 11 (please read the notes on the back first Please fill out this page again)

,1T 本纸張尺度適用中國國家標準(CNS ) A4規格(210X29*7公釐) 28 A7 B7 經濟部中央標準局貝工消费合作社印製 五、發明説明() 1完全轉換爲氮化鋁。比較燒結體與原始氮化鋁粉末之繞射 圖•可發現澆結體於20 =26.69。之處多出一個微弱繞射 峰。根據高橋孝等人於〗986年高熱傳導性七亏三夕又特集 發表無添加燒结助劑氮化鋁之燒结模式,指出氮化鋁粉末 5之顆粒表面本身存在著微量之氧化鋁保護層因此於2,〇〇〇 K以下之溫度燒結後,可於氮化鋁粒界面與氧化鋁形成氮 氧化鋁(Spinel,A10N)之固溶相,由此推測燒结體之徵弱 繞射峰,應爲粒界面上氮氧化鋁(A10M)之固溶相,或係所 蒸鍍被羨之鋁膜與空氣接觸而形成氧化鋁(Al2〇3)化合物 10 ° 依照本發明氮化鋁表面被覆鋁腹之製造方法,所製得 被覆·不同量鋁膜之氮化鋁试片,分別以17〇〇 1C、1750 UC 持溫3小時進行燒結後*該等燒結體所呈現線性收縮率( 15 Linear Shrinkage,LS.)及相對之密度(RD.,Realitive Density)與被星叙量之關係如表一及圖五所示,其間随不 被後鋁膜量而漸增,至被覆鋁量在;[.5 左右可接近理 論值,而被從鋁量高於1.5 wt,%不論相對密度或線性收縮 率均下降趨向不理想之現象,顯示在某被後量區間内,對 20氮化鋁之燒结方有所助益。即使過多之被羡鋁量對於氮化 鋁之燒結,不但無益反而會阻礙其燒結之進行。 於1700 t:燒结溫度其被疫鋁董1.5 v/t%之氮化鋁( 24 A1N)燒结體,相對之密度可達理論值之90.54%,線性收12 本紙張尺度適用中關轉準(CNS) A4規格(2H)X297公羡) ' ' (請先閱讀背面之注意事項再填寫本頁), 1T This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X29 * 7mm) 28 A7 B7 Printed by the Beigong Consumer Cooperative of the Central Standards Bureau of the Ministry of Economy V. Description of invention () 1 Completely converted to aluminum nitride. Compare the diffraction pattern of the sintered body with the original aluminum nitride powder • It can be found that the cast body is at 20 = 26.69. There is a weak diffraction peak. According to Takahashi Takahashi et al.'S high heat conductivity in 986, a special feature published the sintering mode of aluminum nitride without added sintering aid, indicating that the surface of the particles of aluminum nitride powder 5 itself has a small amount of alumina protection After the layer is sintered at a temperature below 2,000K, a solid solution phase of aluminum oxynitride (Spinel, A10N) can be formed with aluminum oxide at the interface of the aluminum nitride particles, from which it is speculated that the sintered body is weakly diffracted The peak should be the solid solution phase of the aluminum oxynitride (A10M) at the grain interface, or the aluminum film deposited by the envied aluminum film in contact with the air to form an aluminum oxide (Al2〇3) compound 10 ° according to the present invention aluminum nitride surface The manufacturing method of the coated aluminum belly, the prepared aluminum nitride test pieces with different amounts of aluminum film coated, respectively, were sintered at 1700 UC and 1750 UC for 3 hours * The linear shrinkage of these sintered bodies ( 15 Linear Shrinkage, LS.) And the relative density (RD., Realitive Density) and the relationship between the amount of star is shown in Table 1 and Figure 5, during which the amount of aluminum film is not gradually increased to the amount of coated aluminum In the [[5 or so can be close to the theoretical value, and the amount of aluminum is higher than 1.5 wt,% regardless of the relative density Or the linear shrinkage rate tends to be unsatisfactory, which shows that it is helpful for the sintering of 20 aluminum nitride in a certain amount range. Even if the excessive amount of envied aluminum is not beneficial to the sintering of aluminum nitride, it will hinder its sintering. At 1700 t: the sintering temperature is 1.5% v / t% aluminum nitride (24 A1N) sintered body, the relative density can reach 90.54% of the theoretical value. Standard (CNS) A4 specification (2H) X297 public envy) '' (Please read the precautions on the back before filling this page)

*1T ό 經濟部中央橾準局員工消费合作社印製 A7 B7 五、發明説明() 1縮率约13.。提高溫度以〗750 °c進行燒结,除被波鋁 量爲5 wt%外之其餘試片不論相對之密度或線性收缩率 均較1700 溫度燒结者爲高,有效被菝鋁量之區間約從 1 wt%到3 wt%,於此區間内其相對密度均高於理論值之 5 90%,其中最佳被禮·銘量爲1.5 wt%可達理論值之95.09 %,線性收縮率也有16.67%。 被復不同鋁膜量之氮化鋁,於1750 Ό燒结溫度分別 持溫1、3、6小時之燒結結果如表二所示,其相對密度 10及蟓性收縮率與被I鋁量之關係如圖六、七所示。不同鋁 膜量被覆之氮化鋁持溫1小時之燒结,雖然燒結體之密度 及線性收缩率均呈現明顯偏低現象*然而介於〇.67〜2,12 wt%免圃之被後鋁膜比未被泉鋁暖之氮化鋁爲佳,顯示被 篷鋁腹有助益於氮化鋁之燒結,其中以1.3 wt%被後鋁 15暖量爲最佳,其燒结體之密度_爲理論值之77.91%,線性 收缩率爲13.17%。持湿3小時之燒结以1.5 wt%之被 恿鋁量其燒結髏之密度可達理論值之95.09% ·線性收縮 率也有16.67%,因此理想被覆鋁随量约在0.67〜2.8 wt %左右。由於加長持溫之時間使燒结體之密度及線性收縮 20率方面更趨向理論值,是以持溫6小時之结果,更明顯被 後鋁膜量對氮化鋁燒结之影智。於被波鋁量爲3.53 wt% 時’密度爲理論值之76.38%,線性收縮率亦僅有7.67% ’而被覆您量爲0.43社%及1.5 wt%之試片,其澆結趙 24之密度高達理謫值之邪.的%、99.39%,線性收缩率均爲 13 本紙張U適财關家規格(210Χ297·:;?Τ ----------Ck------IT------ο (請先wtt背面之注意事項再填寫本頁) ^S3738 A7 B7 經濟部中央標準局員工消费合作杜印裝 五、發明説明() i M.67%左右。由該等结果,可判定於氮化鋁粉末上被後 0.47〜1.5 wt %之鋁膜,以1750 t持溫6小時之燒结 可得到相當緻密之氮化鋁燒结體。 5 比較持溫3小時及6小時含2.5 wt%以上被菝鋁量 之试片,其燒结結果發現不論是密度或線性收縮率上持溫 6小時之試片均較持溫3小時者差,證明被後鋁量過多時 反而阻礙氮化鋁之燒结。因此某一區間之被瘦鋁量,能促 進氮化鋁之澆結,且此區間係随持溫時閭之增長而加寬, 10故有故被後量區間應屬於持·溫時間之函數。 於1700 °C下捋不同被覆鋁量之氮化鋁經持溫3小時 所獲得燒結體剖斷面之氍結構,如相片(1)所示。於相片 (Ι-a)爲無被覆·量之純氮化鋁,其顆粒間有連结(neck)現 15象、晶粒間發生較顯著之大小差距,且殘留較多之孔洞( pore)、其晶界不明顯等現象•是以可確定其燒结不完全。 此係燒结溫度太低並無液相幫助顆粒重排,擴散速率很慢 僅於顆粒較密處較岛令晶粒成長,故造成晶粒間發生較顯 著之欠小差距,其密度僅有理論值之85.89%,線性收縮 20率也降低爲10.47%。 相片(Ι-b)爲被覆O.67wt%鋁量試片之微结搆,其 中所瑰留之孔洞比相片(Ι-a)少,且晶粒較明顯也較大因 24此晶界可清晰地辨認。密度略歡增高達理謫值之87.42% 14 (請先閱讀背面之注意事項再填寫本頁)* 1T ό A7 B7 printed by the Employee Consumer Cooperative of the Central Department of Economic Affairs of the Ministry of Economy V. Description of invention () 1 Shrinkage rate is about 13. Increase the temperature to sinter at 750 ° C. Except for the amount of aluminum to be 5 wt%, the rest of the test pieces are higher than the 1700 temperature sintering regardless of the relative density or linear shrinkage. From about 1 wt% to 3 wt%, the relative density in this interval is higher than 5 90% of the theoretical value, of which the best weight is 1.5 wt%, which can reach 95.09% of the theoretical value, linear shrinkage There is also 16.67%. The sintering results of aluminum nitride coated with different amounts of aluminum film at 1,750 Ό sintering temperature for 1, 3, and 6 hours are shown in Table 2. The relative density of 10 and the shrinkage rate of the aluminum alloy are The relationship is shown in Figures 6 and 7. The aluminum nitride coated with different amounts of aluminum film was sintered at a temperature of 1 hour. Although the density and linear shrinkage of the sintered body were obviously low * However, it was between 0.67 ~ 2, 12 wt% without a quilt. The aluminum film is better than the aluminum nitride that is not warmed by the spring aluminum, which shows that the hooded aluminum belly is helpful for the sintering of aluminum nitride. Among them, 1.3 wt% is best for the heat of the aluminum 15 after being sintered. The density_ is 77.91% of the theoretical value, and the linear shrinkage is 13.17%. The sintering density of the sintered skeleton can reach 95.09% of the theoretical value with 1.5 wt% of sintered aluminum after sintering for 3 hours. The linear shrinkage rate is also 16.67%, so the ideal amount of coated aluminum is about 0.67 ~ 2.8 wt% . Due to the longer holding time, the density and linear shrinkage ratio of the sintered body tended to be more theoretical, and as a result of holding the temperature for 6 hours, the effect of the amount of aluminum film on aluminum sintering was more obvious. When the amount of aluminum to be polished is 3.53 wt%, the density is 76.38% of the theoretical value, the linear shrinkage is only 7.67%, and the test piece with the amount of 0.43% and 1.5 wt% is coated with Zhao 24 Density is up to 99%, 99.39%, and the linear shrinkage rate is 13 pieces of paper U Shicai Guanjia specifications (210Χ297 ·:;? T ---------- Ck ---- --IT ------ ο (please pay attention to the matters on the back of wtt before filling out this page) ^ S3738 A7 B7 Central China Bureau of Economic Affairs Employee's Consumer Cooperation Du Printed Fifth, Invention Description () i M.67% From these results, it can be judged that 0.47 ~ 1.5 wt% of aluminum film is sintered on aluminum nitride powder, and sintering at a temperature of 1750 t for 6 hours can obtain a quite dense aluminum nitride sintered body. The sintering results of the test pieces containing more than 2.5 wt% of smilax aluminum at a temperature of 3 hours and 6 hours found that the test pieces held at a temperature of 6 hours in terms of density or linear shrinkage were worse than those held at a temperature of 3 hours, which proved to be When the amount of post-aluminum is too much, it will hinder the sintering of aluminum nitride. Therefore, the amount of thin aluminum in a certain area can promote the casting of aluminum nitride, and this area is widened with the increase of the temperature when the temperature is maintained. 10 The measured volume should be a function of the holding time and temperature time. The aluminum structure of aluminum nitride with different amounts of aluminum coated at 1700 ° C can be obtained by holding the temperature for 3 hours, as shown in the photo (1) In the photo (Ι-a), it is pure aluminum nitride with no coating and quantity, there are 15 images between the particles, there is a significant size difference between the grains, and there are more pores (pores) ), Its grain boundary is not obvious, etc. • It can be determined that its sintering is incomplete. The sintering temperature of this system is too low and there is no liquid phase to help the rearrangement of the particles, the diffusion rate is very slow, only the denser particles are closer to the islands. The grain growth causes a significant gap between the grains. The density is only 85.89% of the theoretical value, and the linear shrinkage 20 rate is also reduced to 10.47%. The photo (Ι-b) is the amount of coated O.67wt% aluminum The microstructure of the test piece, which contains fewer holes than the photo (Ι-a), and the grains are more obvious and larger. This grain boundary can be clearly identified. The density is slightly increased up to 87.42 of the reasonable value % 14 (Please read the notes on the back before filling this page)

訂 0 本紙張尺度適用中國國家標準(CNS ) A4&# ( 210X 297公釐) 經濟部中央標隼局員工消费合作社印裝 A7 ------------ B7 五、發明説明() " ~- 1相片(〗~c)係被後约1.5 wt %鋁量經1700 "0燒鯖所 獲得燒结雜之徵结構,其密度爲理論值之90.59%係此部 份中最高。相片(H)之徵㈣,軸其麵絲較(卜b 、卜c)爲多*然而其中存在不少徵裂缝,且於粒界面及裂 5缝周圃亦有些氮化銘微粒。相片(1_e)係被度5心鋁 量之燒结體,因被|鋁量過多於燒结過程中,所產生之徵 裂缝與氮化餘微粒太多,而阻礙了氮化紐之燒结。 將絶結溫度畀高至〗750 "C以上迷相同之被覆量持溫 10 3小時燒结體剖斷面之微結構,如相片(2)所示。發現相 片(2)之孔洞量普遍減少及晶粒1現成長現象.證實175〇 °C燒結體之緻密度均較17〇〇 C燒結體爲佳。被後0.67 wt%銘量之燒结雄其密度較被裹2.8 wt%鋁量者爲低, 此現象與相片(1)所述以17〇〇 Ί〇燒结之惰形相反。此外 15被羡過多鋁膜:量燒结始之微结構相片中,可發現於υςοΡ 通廣之洗結始較少於大晶粒表面敢布氛化餘紙粒。 比照相片(2)之方式於持溫G小時所獲彳|澆结體剖面 之撖結構,如相片(3)所示。由於延長持溫呤間而增加被 20後鋁之擴散作用,使彳f持溫6小時之試片其孔洞數減少, 粒徑也稍爲加大•然而其粒界仍然模糊故密度不高,僅爲 獲論值之89.87%。相片(3_b)、(3—c)中幾乎看不到轧洞 ,且·平均粒徑约有2 “m左·右亦有顯著增加現象,屬於相 24當緻密之晚結體,可與相對密度爲99%以上之測試值相 15 本紙張尺度適用中國國家標隼(CNS ) Α4规格(2丨〇X 297公釐) (請先M讀背面之注意ί項再填寫本頁) A. 訂 A7 B7 283738 五、發明説明() 1對應。相片(3-e)爲被疫鋁量過多之試片,已改善相片(1 -e)、(2-e)氮化鋁晶粒表面散佈氮化鋁微粒及片狀之現象 ,而於晶粒表面分布結合成之小堍狀。 5 爲評估依據本發明"氮化鋁表面被炎鋁臌之製造.方法 々製佛之氮化鋁,能應用於電子封裝基板材料方面,因此 因此測量諸如绝緣電阻、介電係數、損耗因子、熱傳導率 ....等之基板材料之基本要件。 10 以25 voltage及charge 30 sec.之測试條件運用HP •4329 A高電阻计測量電阻係數,如表三所示燒結禮之電 阻係數值示中,密度與電阻係數間有相同之趨勢,呈現密 度較高之燒结體其電限係數亦較高之現象,其中15 wt% 理想被從鋁煖量之試片约在1700 t之燒结後,其電限係 15數之較佳值约爲5.94><101() Ω-cm,而1750 t燒结後其 值爲SjXlOHQ-cm均屬於绝緣免围内。 即使以1750 °C之持溫1小時燒结被嚴適當鋁量之試 片,如表二所示其最髙密度僅能達到理論值之77.91 %, 20其電陌係數如表四所示僅達10]° Ώ-cro。而恒溫3、6小 時燒蛄後密度可達到95 %以上之試片•其電限係數俊值 均擁有絶緣氟圍之1011 Ω-cni級數。 24 爲減少訊號於電路中傳遞之延遲速度,因此對於搭載 16 本紙張尺度適用中國國家橾準(CNS ) A4規格(210X297公釐) (讀先閲讀背面之注意事項再填寫本頁) -*β Ο 經濟部中央標隼局員工消費合作社印製 經濟部中央標準局員工消費合作社印製 他738 A7 __ B7 五、發明説明() 1高姨元件之基板村料應追求具有較低之介電常教《以 t:之持溫3小時燒结不同被後鋁暖量,因試片之密度差 異較大,導致如蹰八所示於燒结體之比介電常數、損耗因 子(tan δ)與被菝鋁量之關保圖呈現比介電常數、損耗因 5子之值有顯著之高低差異性。被後鋁量15 wt%之試片所 呈現之比介電常數爲12.〇9、損耗因子约0.2813 (ΙΚΗζ), 顯示相對密度越高之試片其介電常數、損耗因子均趨向較 理想之簌園。而於1750 t:之溫度亦獲得相同之趨勢,惟 被菝鋁量不同之試片間其介電常數、損耗因子之差異性較 10小。而延長持溫之時間對於氮化鋁被毳鋁量不同呈現比介 電常數、損耗因子之差異性趨勢,迸無太大之影f性,如 圖九單獨探纣试片之介電常數與被覆鋁量之關係圖•以及 圖十燒结體損耗因子與被廈鋁量之關係圖所示,於持溫3 和6小時之最佳燒结體其介電常數值爲9 7肪、10.81,最 15低損耗因子值爲0.0722,持溫6小時爲0.0173及0.0240 均係相對密度大於95%之試片。 小型化電子產品其高密度之猜體電路及電子系统,高 速度運作之結果,其電于元件均產生大量之熱量,因此作 20爲基板之材料,需具偫足以散發元件熱量降低其熱傳導率 *以免捐壞電子元件之特性。本發明〃氮化鋁表面被孩鋁 猨之製造方法"被度鋁量2.12 Wt %於1750 持溫6小 時燒结之试片,經上述測试獲知相對密度g7.55 %於委訖 24工研院利用雷射閃光測試所得之熱傳導率值爲12〇 w/m.k。 17 本紙張尺度適用中國國家榡準(CNS ) A4規格(210X297公釐 ----------0^------,玎------0 (請先閱讀背面之注意事項再填寫本頁} A7 B7 1 五、發明説明( .,上所述,依據本發明"氮化鋁表面被覆鋁膜之製造 方法於氮化赵粉體之表面被嚴金屬鋁暖後,直接經由成 形1;施以令均壓步驟將其置於常壓下以1650 °C〜1750 P 較f知溫度爲低之低溫澆结,而形成緻密之氮化鋁澆结體 之製造方法。由於本方法不使用燒结助劑,可節省添加燒 結助劑之迅合時間、造粒時間,於製程上更趨向纪筚„燒 結體又經各種徵結構之觀察以及性狀之分析,證實澆結體 擁有符合產業需求極佳之性狀。 10 爲使本發明之目的、方法及優點能更明顯地説明,以 下特舉實施例作烊細具體之陳述,但不以其内容限制本發 明之簌圍。 (請先閱讀背面之;i意事項再填寫本頁) 裝 、-» 15 經濟部中央橾隼局員工消费合作社印$!. 20 24 圖式説明 圖一製造流程 1·.真空窒11..電極12..鎢鲧13..培養m 14..派拉尼真空计2..擴教幫克 21..爇水出口 22..冷水入口 3..離子真空纤4..真空間 5..機械幫浦 圈二真空蒸鍍裝置 圈三後腹流程圈 圖四X光繞射蹰 1.原料氣化鋁 2.金屬鋁 3.被後鋁腹之氮化鋁粉末 4.燒结後氮化鋁燒结赶 圖玉燒结《4之相坶密度、線性收縮車與被|鋁量之關 係圖(挣溫3小時) 1700 1〇 ☆相對密度*線性收縮 175(TC □相對密度+線性收縮 18 "i. 本紙张尺度適用中國國家標準(CNS ) A4規格(2丨0X297公釐)Order 0 This paper scale is applicable to the Chinese National Standard (CNS) A4 &# (210X 297mm) Printed and printed on the A7 & Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs A7 ------------ B7 V. Description of invention () &Quot; ~-1 photo (〗 ~ c) is the characteristic structure of sintered impurities obtained after 1700 " 0 burned mackerel with about 1.5 wt% aluminum content after quilt, and its density is 90.59% of the theoretical value is this part The highest. The sign (H) of the photo (H), the surface of the shaft is more than (b b, b c) * However, there are many sign cracks, and there are also some nitride particles at the grain interface and cracks. The photo (1_e) is a sintered body with an amount of 5 cores of aluminum. Because the amount of aluminum is too much in the sintering process, the resulting cracks and excessive nitride particles are too large, which hinders the sintering of the nitrided button . The microstructure of the cross-section of the sintered body was kept at a temperature of 750 " C above the same coating amount for 10 3 hours, as shown in the photo (2). It was found that the amount of pores in the photograph (2) generally decreased and the grain 1 was now growing. It was confirmed that the density of the sintered body at 175 ° C was better than that of the sintered body at 170 ° C. The density of the sintered male with 0.67 wt% inscribed amount is lower than that of 2.8 wt% aluminum, which is the opposite of the inert shape sintered at 170 ° Ί〇 described in the photo (1). In addition, 15 was envied by too much aluminum film: the microstructure photo of the beginning of the mass sintering, it can be found that the washing and cleaning of υςοΡ is generally less than the dare to disperse the remaining paper particles on the surface of the large grain. The structure of the cross-section of the cast body obtained by holding the temperature for G hours compared with the photograph (2) is shown in the photo (3). Due to the extension of the temperature holding temperature, the diffusion effect of aluminum after 20 was increased, so that the number of holes in the test piece held at the temperature of 6 hours was reduced, and the particle size was slightly increased. However, the grain boundary was still blurred and the density was not high. Only 89.87% of the argument value. In the photos (3_b) and (3-c), almost no rolling holes can be seen, and the average particle size is about 2 "m left and right, there is also a significant increase phenomenon, which belongs to the phase 24 when the dense late junction body can be compared with the relative The test value with a density of 99% or more is 15. This paper scale is applicable to the Chinese National Standard Falcon (CNS) Α4 specification (2 丨 〇X 297mm) (please read the note on the back first and then fill in this page) A. Order A7 B7 283738 V. Description of invention () 1. Correspondence. The photo (3-e) is a test piece with too much aluminum, which has been improved. The photos (1 -e) and (2-e) aluminum nitride grains have nitrogen on the surface. The phenomenon of aluminum oxide particles and flakes, which are combined in the shape of small grains on the surface of the grain. 5 To evaluate the manufacturing method of aluminum nitride on the surface of aluminum nitride according to the present invention " aluminum nitride. It can be applied to electronic packaging substrate materials, so the basic requirements of substrate materials such as insulation resistance, dielectric coefficient, loss factor, thermal conductivity ... are measured. 10 Test with 25 voltage and charge 30 sec. Conditional use HP • 4329 A high resistance meter to measure the resistance coefficient, as shown in Table 3, the resistance coefficient value of sintering ceremony, There is the same trend between the degree and the resistivity, showing that the sintered body with higher density has a higher electric limit coefficient, of which 15 wt% is ideally sintered from the aluminum heating test piece after about 1700 t. The preferred value of the electrical limit system 15 is about 5.94 > < 101 () Ω-cm, and its value after sintering at 1750 t is SjXlOHQ-cm, which is within the insulation free range. Even at 1750 ° C The test piece sintered with a proper amount of aluminum after being sintered at a temperature of 1 hour, as shown in Table 2, the highest density can only reach 77.91% of the theoretical value, and the electrical coefficient of 20 is only 10] ° as shown in Table 4. ° Ώ-cro The test piece whose density can reach more than 95% after burning at a constant temperature for 3 or 6 hours • The electric limit coefficient has a value of 1011 Ω-cni grades of insulating fluorine. 24 To reduce the delay speed of signal transmission in the circuit Therefore, the Chinese National Standard (CNS) A4 specification (210X297mm) is applicable to the 16 paper standards (read the precautions on the back and then fill out this page)-* β Ο Printed by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs 738 A7 __ B7 printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The substrate material of the substrate should be pursued with a low dielectric constant teaching "T: holding the temperature for 3 hours to sinter different aluminum after the sintering, the difference in density of the test piece is large, resulting in sintering as shown in the eighth The protection charts of the specific dielectric constant, loss factor (tan δ) and amount of smilax aluminum show a significant difference between the specific permittivity and loss due to the value of 5. The amount of aluminum after being tested is 15 wt% The specific dielectric constant exhibited by the film is 12.09, and the loss factor is about 0.2813 (ΙΚΗζ), indicating that the higher the density of the test piece, the higher the dielectric constant and the loss factor tend to be the ideal 簌 园. The temperature at 1750 t: the same trend was obtained, but the difference in dielectric constant and dissipation factor between the test pieces with different amounts of Smilax aluminum was smaller than 10. The prolonged temperature holding time shows the difference in specific permittivity and dissipation factor for different amounts of aluminum nitride and aluminum, and there is no great influence. As shown in Figure 9, the dielectric constant and The relationship between the amount of coated aluminum and the relationship between the loss factor of the sintered body and the amount of aluminum to be shown in Figure 10. The optimal sintered body at a temperature of 3 and 6 hours has a dielectric constant value of 97%, 10.81 The lowest 15 loss factor value is 0.0722, and the temperature maintained for 6 hours is 0.0173 and 0.0240. Both are test pieces with relative density greater than 95%. Miniaturized electronic products have high-density body circuits and electronic systems that operate at high speeds. The electricity generated by the components generates a lot of heat. Therefore, the material used as the substrate must be sufficient to dissipate the heat of the component and reduce its thermal conductivity. * To avoid donating the characteristics of electronic components. The manufacturing method of "aluminum nitride surface of the present invention" is "aluminum nitride surface" and "aluminum content 2.12 Wt% at 1750 sintered for 6 hours. The above test revealed that the relative density g7.55% is on commission 24 The thermal conductivity value obtained by the Institute of Industrial Technology's laser flash test is 12〇w / mk. 17 This paper scale is applicable to China National Standard (CNS) A4 specification (210X297mm ---------- 0 ^ ------, 玎 ------ 0 (please read the back Please pay attention to this page and fill in this page} A7 B7 1 V. Description of the invention (., As mentioned above, according to the present invention " Aluminum nitride surface coated aluminum film manufacturing method. After the surface of the nitride powder is warmed by strict metal aluminum, Directly by forming 1; applying the pressure equalization step and placing it under normal pressure at a temperature of 1650 ° C ~ 1750 P which is lower than the known temperature to form a compact aluminum nitride cast body. Since this method does not use sintering aids, it can save the time of adding sintering aids and granulation time, and it is more trendy in the manufacturing process. The sintered body has been observed by various structural features and analysis of properties to confirm the pouring The body possesses excellent traits that meet the needs of the industry. 10 In order to make the purpose, method and advantages of the present invention more obvious, the following specific examples are given as detailed and specific statements, but they are not limited by their contents. (Please read the back of the page; i will fill out this page if you want to pay attention) Install,-»15 Central Ministry of Economics Falcon Employee Consumer Cooperative Prints $ !. 20 24 Illustrated Figure 1 Manufacturing Process 1. Vacuum suffocation 11. Electrode 12. Tungsten Gun 13. Cultivation m 14. Pelarney Vacuum Gauge 2. Expansion 21 .. Water outlet 22 .. Cold water inlet 3. Ion vacuum fiber 4 .. Vacuum chamber 5 .. Mechanical pump ring 2. Vacuum evaporation device ring 3. Back ventilator flow circle Figure 4. X-ray diffraction 1. Raw materials Vaporized aluminum 2. Metal aluminum 3. Aluminum nitride powder after the aluminum belly 4. Sintered aluminum nitride sintered to catch the jade sintering "The relationship between the density of 4 phases, the linear shrinkage car and the amount of aluminum Figure (3 hours of earning warmth) 1700 1〇 ☆ Relative density * Linear shrinkage 175 (TC □ Relative density + linear shrinkage 18 " i. This paper scale applies the Chinese National Standard (CNS) A4 specifications (2 丨 0X297mm

五、發明説明() 麵濟部中夬樣隼局員工消費合作社印裝 圈六燒結艟之相對密度與被後鋁量之關係圖 (1750 1C燒结溫度) +挣溫1小時 □挣溫3小時 *柃溢6小時 圖七燒结禮之線性收縮率與被灰鋁量之關係圖 5 (1750 C燒结溫度) t持溫1小時 □持·溫3小時 *挣溫6小時 阈八燒結體之比介電常數、損耗因子(tan 0、)與被爰 鋁量之關係圈(柃溫3小時) 1700 V □比介電常數+損耗因子 1750 °C * 比介電常數 損耗因子 °圖九燒紬體之比介電常數與被疫鋁量之關係圖 (1750 °C燒结溫度) *挣溫1小時+挣溫3小時□挣溫6小時 圖十燒结體之比介電常數、損耗因子(tanδ)與被從 鋁量之關係圖(1750 °C燒结溫度) *柃溫1小時+柃濃3小時□拎溫6小時 表、照片之説明 表卜)不同被波銘量於1700 1〇及1750 〇C燒结後, 燒结體之密度、相對密度及線性收缩率 A繞結溫度=1700 t B燒结温度=1750。〇 表(二)不同被炎餘量於1750 °C持溫1、3、6小時之繞 结结果 表(二)1700 °C及1750 t挣溫3hr,氣化拓燒结禮 之電阻係數值 表(四)氣化铉於1750 aC柃溫1、3、6小時,燒结禮 4 之電阻係數值 19 本紙張尺度適用中國國家標準(CNS ) Λ4規格(210X 297公釐) (請先閱讀背面之注意事項再填寫本頁)V. Description of the invention () The relationship between the relative density of the six sintered sterns and the amount of aluminum after being printed in the printing circle of the employee consumer cooperative of the Zhongshen Falcon Bureau of the Ministry of Economy (1750 1C sintering temperature) + earning 1 hour □ earning 3 Hours * 6 hours of overflow Figure 7 The relationship between the linear shrinkage of the sintering ceremony and the amount of gray aluminum. Figure 5 (1750 C sintering temperature) t holding temperature 1 hour □ holding temperature 3 hours * earning temperature 6 hours threshold eight sintering Relationship between volume ratio dielectric constant, dissipation factor (tan 0,) and the amount of aluminum to be treated (temperature 3 hours) 1700 V □ specific dielectric constant + dissipation factor 1750 ° C * specific dielectric constant dissipation factor ° diagram Diagram of the relationship between the dielectric constant of the nine-burning body and the amount of aluminum affected (sintering temperature at 1750 ° C) * Earning temperature 1 hour + earning temperature 3 hours □ Earning temperature 6 hours Figure 10 Ratio dielectric constant of sintered body 、 The relationship diagram between the loss factor (tanδ) and the amount of aluminum to be removed (sintering temperature at 1750 ° C) * Temperature for 1 hour + Concentration for 3 hours □ Temperature for 6 hours Table, photo description table) After sintering at 1700 1〇 and 1750 ℃, the density, relative density and linear shrinkage of the sintered body A winding temperature = 1700 t B sintering temperature = 1750. 〇Table (2) Winding results of different surplus at 1,750 ° C for 1, 3, 6 hours holding temperature (2) 1700 ° C and 1750 t for 3hr, resistance coefficient value of gasification and sintering ceremony Table (4) The resistance coefficient value of sintered gas at 1,750 aC for 1, 3, 6 hours, sintering ceremony 4 19 This paper scale is applicable to the Chinese National Standard (CNS) Λ 4 specification (210X 297 mm) (please read first (Notes on the back then fill this page)

A7 A7 經濟部中央樣準局員工消费合作社印製 B7 五、發明説明() 照片(1)被後不同鋁量之氮化鋁•於1700 t持溫 3小時之燒结體,其剖面之 5 (a)0.00 wt% (b)〇,67 wt% (c)1.50 wt% (d)2.80 wt^ (g)5.〇〇 wt% 照片(2)被覆·不同鋁量之氮化鋁,於;[750它持溫3小 時之燒结趙•其剖面之Sem (a)0.00 wt% (b)0.67 wt^ (c)1.50 wt^ 10 (d)2.80 wt% (e)5.00 wt% 照片(3)被羡不同鋁量之氮化鋁,於17〇〇 c持溫6小 時之洗結體,其剖面之 (a)0.00 wt% (b)0.43 wt% (c)1.5 wt^ (d)2.4 wt% (e)3.53 wt% 15 實施例1 取3 g氮化鋁(AIN)粉末先以loo篩網過篩,均勻散 布於培養皿中,置入真空室並精稱0.1 g鋁線,掛於加熱 20之鎢絲上,待真空度達10—4〜10_ε torr.,捋電流調至 50安培(Λ)電壓爲3 v。當鋁完全熔化後4〇秒關閉電源 ’置冷後將粉體翻轉•依所需被後之鋁量•不斷重I。 24 取1 8已被覆鋁蚩1.5 wt%之氮化鈕粉東,置於直徑 20 本紙張尺度迺用r國躅冢標芈(CNSy A4規格(210X297公釐) (請先閱讀背面之注意事領再填寫本頁)A7 A7 B7 printed by the Employee Consumer Cooperative of the Central Prototype Bureau of the Ministry of Economic Affairs 5. Description of the invention () Photo (1) Aluminum nitride with different amounts of aluminum after being sintered. (a) 0.00 wt% (b) 〇, 67 wt% (c) 1.50 wt% (d) 2.80 wt ^ (g) 5.〇〇wt% photo (2) coated aluminum aluminum nitride with different amounts of ; [750 Sintered Zhao with its temperature held for 3 hours • Sem of its profile (a) 0.00 wt% (b) 0.67 wt ^ (c) 1.50 wt ^ 10 (d) 2.80 wt% (e) 5.00 wt% photo ( 3) The aluminum nitride with different amounts of aluminum is washed at 170 ° C for 6 hours. The cross-section is (a) 0.00 wt% (b) 0.43 wt% (c) 1.5 wt ^ (d) 2.4 wt% (e) 3.53 wt% 15 Example 1 3 g of aluminum nitride (AIN) powder was first sieved through a loo screen, evenly distributed in a Petri dish, placed in a vacuum chamber and weighed 0.1 g of aluminum wire, Hang it on the tungsten wire heated at 20, and wait for the vacuum to reach 10-4 ~ 10_ε torr. The current is adjusted to 50 amperes (Λ) and the voltage is 3 v. When the aluminum is completely melted, turn off the power for 40 seconds. After cooling, turn the powder over. According to the amount of aluminum needed, keep on repeating I. 24 Take 1 8 of 1.5% by weight coated aluminum nitride nitride powder, and place it on a paper with a diameter of 20. The standard size is r 圅 庅 塅 堈 芈 (CNSy A4 specification (210X297mm) (please read the notes on the back first Fill in this page)

A7 B7 五、發明説明() 1 1.5 cm不銹鋼模具中*運用油壓機以15 kg/cm2之壓力乾 壓成型•然後於2〇〇〇 kg/cm2壓力下施以冷均壓,挣壓1 分鑀形成試片。 5 將試片置於氮化硼(BN)坩堝,以2><10~4 torr真 空狀沉之髙溫爐,緩緩升溫至300 通入99 9%氛氣, 雉持氮氣之氣壓於1.04 atm而以10 之速率升溫 至750 C持溫2小時,再以5 C/min之速率升溫到;[,45〇 t:持溫3小時,最後以2.5 tVmin之速率升溫至1700它 10持溫3小時。 實施例2〜20 比照實施例1方式,依照表五所示條件分別製作各種 15弒片。 (請先聞讀背面之注意事項再填寫本頁) -* 經濟部中央標芈局負工消费合作社印製 20 24 21 本紙張尺度適用中國國家榡準(CNS ) A4現格(210X297公釐)A7 B7 V. Description of the invention (1) In a 1.5 cm stainless steel mold * Use a hydraulic press to dry-press molding at a pressure of 15 kg / cm2 • Then apply cold equalization pressure under a pressure of 2000 kg / cm2 to earn 1 point Form a test piece. 5 Place the test piece in a boron nitride (BN) crucible in a vacuum furnace of 2 > < 10 ~ 4 torr vacuum shape, slowly increase the temperature to 300, pass 99 9% atmosphere, and hold the pressure of nitrogen at 1.04 atm and heated at a rate of 10 to 750 C for 2 hours, then at a rate of 5 C / min; [, 45〇t: held for 3 hours, and finally heated to 1700 at a rate of 2.5 tVmin Warm for 3 hours. Examples 2 to 20 According to the method of Example 1, various 15 pieces were produced according to the conditions shown in Table 5. (Please read the precautions on the back and then fill out this page)-* Printed by the Consumer Labor Cooperative of the Central Standardization Bureau of the Ministry of Economic Affairs 20 24 21 This paper size is applicable to the Chinese National Standard (CNS) A4 (210X297 mm)

Claims (1)

六、申請專利範圍 • 一種低溫燒结氮化鋁(ALN)成緻密氮化鋁陶瓷燒结體之 方法: 使用表面被後金屬A1量0· 1〜5wt宄之氮化鋁顆粒 或凝聚體,經壓力成形、燒结時,先於真空下加 熱使A1熔化連結於氛化鋁顆粒之間,並持溫一段 時間之後,通入可將金屬鋁氮化成氮化鋁之氣體 ,且在氮化溫度柃溫,再升溫1650 〜1750 燒姑温度,產生緻密度高之氮化鋁陶瓷燒结體。 ---------ί------IT-----^— Μ I (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印策 本紙張尺度適用中國國家標準(CNS ) Λ4規格(210 X 297公釐)6. Scope of patent application • A method for sintering low-temperature aluminum nitride (ALN) into a dense aluminum nitride ceramic sintered body: using aluminum nitride particles or aggregates with a surface metal A1 amount of 0 · 1 ~ 5wt%, After pressure forming and sintering, first heat under vacuum to melt A1 and connect it between the aluminum oxide particles, and keep the temperature for a period of time, then pass a gas that can nitrify the metal aluminum into aluminum nitride. The temperature is increased, and then the temperature is increased from 1650 to 1750 sintering temperature to produce a dense aluminum nitride ceramic sintered body. --------- ί ------ IT ----- ^ — Μ I (Please read the precautions on the back before filling out this page) Printed copy of the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The paper scale is applicable to the Chinese National Standard (CNS) Λ4 specification (210 X 297 mm)
TW83108564A 1994-09-17 1994-09-17 A new sintering process for A&N powder coated with Al film TW283738B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447791B (en) * 2007-09-05 2014-08-01 Applied Materials Inc Ceramic cover wafers of aluminum nitride or beryllium oxide
TWI466822B (en) * 2010-02-18 2015-01-01 Hitachi Chemical Co Ltd Composite particle and method for producing the same, and resin composition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447791B (en) * 2007-09-05 2014-08-01 Applied Materials Inc Ceramic cover wafers of aluminum nitride or beryllium oxide
TWI466822B (en) * 2010-02-18 2015-01-01 Hitachi Chemical Co Ltd Composite particle and method for producing the same, and resin composition
US9249293B2 (en) 2010-02-18 2016-02-02 Hitachi Chemical Company, Ltd. Composite particle, method for producing the same, and resin composition

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