JP2009132708A - 有機金属前駆物質錯体 - Google Patents
有機金属前駆物質錯体 Download PDFInfo
- Publication number
- JP2009132708A JP2009132708A JP2008292376A JP2008292376A JP2009132708A JP 2009132708 A JP2009132708 A JP 2009132708A JP 2008292376 A JP2008292376 A JP 2008292376A JP 2008292376 A JP2008292376 A JP 2008292376A JP 2009132708 A JP2009132708 A JP 2009132708A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- complex
- barrier layer
- metal
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002243 precursor Substances 0.000 title claims abstract description 85
- 125000002524 organometallic group Chemical group 0.000 title claims abstract description 45
- 239000010949 copper Substances 0.000 claims abstract description 228
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 174
- 229910052802 copper Inorganic materials 0.000 claims abstract description 174
- 230000004888 barrier function Effects 0.000 claims abstract description 141
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 91
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 56
- 238000009792 diffusion process Methods 0.000 claims abstract description 43
- 238000001179 sorption measurement Methods 0.000 claims abstract description 30
- 239000003446 ligand Substances 0.000 claims abstract description 27
- 125000006575 electron-withdrawing group Chemical group 0.000 claims abstract description 21
- 230000009467 reduction Effects 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 36
- -1 organometallic copper complex Chemical class 0.000 claims description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims description 24
- 229910052721 tungsten Inorganic materials 0.000 claims description 20
- 239000010937 tungsten Substances 0.000 claims description 18
- 239000003638 chemical reducing agent Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000004215 Carbon black (E152) Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229930195733 hydrocarbon Natural products 0.000 claims description 5
- 150000002430 hydrocarbons Chemical class 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 claims description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims description 2
- SKKMWRVAJNPLFY-UHFFFAOYSA-N azanylidynevanadium Chemical compound [V]#N SKKMWRVAJNPLFY-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- 238000000151 deposition Methods 0.000 abstract description 66
- 239000000126 substance Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 165
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 32
- 150000001875 compounds Chemical class 0.000 description 28
- 230000008021 deposition Effects 0.000 description 26
- 238000004364 calculation method Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 19
- 239000012691 Cu precursor Substances 0.000 description 18
- 125000004429 atom Chemical group 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 15
- 229910052739 hydrogen Inorganic materials 0.000 description 15
- 238000011946 reduction process Methods 0.000 description 15
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 12
- 0 *NC1C(CCC2CC2)C1 Chemical compound *NC1C(CCC2CC2)C1 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000005749 Copper compound Substances 0.000 description 9
- 238000004088 simulation Methods 0.000 description 9
- 229910052723 transition metal Inorganic materials 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 150000004699 copper complex Chemical class 0.000 description 8
- 230000003993 interaction Effects 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 150000003624 transition metals Chemical class 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 229910000071 diazene Inorganic materials 0.000 description 3
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- HBEDSQVIWPRPAY-UHFFFAOYSA-N 2,3-dihydrobenzofuran Chemical compound C1=CC=C2OCCC2=C1 HBEDSQVIWPRPAY-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910000085 borane Inorganic materials 0.000 description 2
- 150000001718 carbodiimides Chemical class 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 150000001880 copper compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- IXHBTMCLRNMKHZ-LBPRGKRZSA-N levobunolol Chemical compound O=C1CCCC2=C1C=CC=C2OC[C@@H](O)CNC(C)(C)C IXHBTMCLRNMKHZ-LBPRGKRZSA-N 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 125000006724 (C1-C5) alkyl ester group Chemical group 0.000 description 1
- 125000006527 (C1-C5) alkyl group Chemical group 0.000 description 1
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 1
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- AMKGKYQBASDDJB-UHFFFAOYSA-N 9$l^{2}-borabicyclo[3.3.1]nonane Chemical compound C1CCC2CCCC1[B]2 AMKGKYQBASDDJB-UHFFFAOYSA-N 0.000 description 1
- FEJUGLKDZJDVFY-UHFFFAOYSA-N 9-borabicyclo[3.3.1]nonane Substances C1CCC2CCCC1B2 FEJUGLKDZJDVFY-UHFFFAOYSA-N 0.000 description 1
- 101100115215 Caenorhabditis elegans cul-2 gene Proteins 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 238000003775 Density Functional Theory Methods 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical class [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- AYWHENVLARCQQQ-UHFFFAOYSA-N copper;1h-pyrrole Chemical compound [Cu].C=1C=CNC=1 AYWHENVLARCQQQ-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 238000005649 metathesis reaction Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ROSDSFDQCJNGOL-UHFFFAOYSA-N protonated dimethyl amine Natural products CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
【解決手段】金属と電子求引基を含む配位子とを含む有機金属前駆物質錯体。該錯体は、十分にパッシベーションされた拡散バリア層及び該拡散バリア層に被着された金属層へ発熱的に化学吸着し、且つ該拡散バリア層及び該金属層上で発熱性の還元を受けるのに適合している。金属は好ましくは銅である。該錯体を原子層堆積において利用する。
【選択図】なし
Description
(a)有機金属前駆物質は化学的に安定でなければならず、且つ基材表面への暴露により解離(例えば、不均化反応によって)してはならない。
(b)有機金属前駆物質の配位子は基材表面と反応せずに、基材表面に対する金属の密着性を良好にするものでなければならない。
(c)有機金属前駆物質は、ALDチャンバに気相で送給できるように、十分な揮発性を有しなければならない。
量子力学的密度関数に基づく広範な第一原理シミュレーションを一連の有機金属前駆物質を用いて行って、WN(111)及びCu(100)表面へのALDによる銅の被着をシミュレーションした。シミュレーションは、現在市販されている前駆物質及び本願で初めて開示される前駆物質を含んでいた。最初のCu層がその上に被着されるWN(111)の最上層が窒素原子によって完全に覆われるように、バリア層WN(111)の表面は窒素によって十分にパッシベーションされたことに言及することが重要である。その後のCu層は、WN(111)バリア層の上に既にALD法によって被着されたCu層の上に被着された。
(a)前駆物質の配位子と十分にパッシベーションされた拡散バリア層(又は銅層)との相互作用は、前駆物質中の銅原子と拡散バリア層(又は銅層)との相互作用よりも弱くなければならない。
(b)前駆物質の配位子と十分にパッシベーションされた拡散バリア層(又は銅層)との相互作用は、配位子の吸着エネルギーが典型的な物理的吸着よりも弱いか又は同程度となるように、十分弱くなければならない。
(c)前駆物質の配位子の大きさは、十分にパッシベーションされた拡散バリア層(又は銅層)に送給される銅原子を遮蔽するほど大きくてはならない。
上述した式Iと同様な構造のCu(I)有機金属前駆物質をシミュレーションで用いて、ALDによる銅の被着を研究した。
窒素によってパッシベーションされた、WN(111)などの遷移金属表面では、Cu(I)又はCu(II)前駆物質は、まず表面への吸着サイクルの際に、4つのN原子によって形成された4配位の中空部で吸着される。還元サイクルの際に、吸着された種は前駆物質中のCu原子と結合している原子のところで水素などの還元性ガスによって攻撃され、水素分子が解離しCu原子が還元されることになる。その結果、Cu原子は拡散バリア層上に被着され、配位子は表面から気相へ解放される。Cu(I)及びCu(II)有機金属前駆物質によって銅を被着させるプロセス全体に関わる反応を下に示す。
(a)吸着工程
(a)吸着工程
ALDで被着された銅などのCu表面では、Cu(I)又はCu(II)前駆物質はまずCu表面への吸着サイクルで吸着される。還元サイクルでは、水素分子がCu表面に解離的に化学吸着され、高移動度のH原子を生ずる。次いで、この原子の水素は吸着された種を前駆物質中のCu原子と結合している原子のところで攻撃して、Cu原子を還元することになる。その結果、Cu原子がCu表面に被着され、配位子は表面から気相へ解放される。Cu(I)及びCu(II)有機金属前駆物質によって銅を被着させるプロセス全体に関わる反応を下に示す。
H2 + Cu(100) → 2H・Cu(100)
(a)吸着工程
H2 + Cu(100) → 2H・Cu(100)
下に示す構造AのCu(I)前駆物質について、第一原理計算を行った。この構造は、4つのイソプロピル基が4隅のN原子と結合した2つの融合した5員環からなる。
下に示す構造BのCu(I)前駆物質について、第一原理計算を行った。この構造は、4つのイソプロピル基が4隅のN原子と結合した2つの融合した5員環からなる。
下に示す構造CのCu(I)前駆物質について、第一原理計算を行った。この構造は、10のトリフルオロメチル基が構造の周りに分散している2つの融合した5員環からなる。
下に示す構造DのCu(II)前駆物質について、第一原理計算を行った。この構造は、4つの酸素原子がCu原子をはさみこむ2つの6員環からなる。
下に示す構造EのCu(II)前駆物質について、第一原理計算を行った。この構造は、4つの酸素原子がCu原子をはさみこむ2つの6員環からなる。
下に示す構造FのCu(II)前駆物質について、第一原理計算を行った。この構造は、4つの酸素原子がCu原子をはさみこむ2つの6員環からなる。
Claims (30)
- 十分にパッシベーションされた拡散バリア層及び該拡散バリア層に被着された金属層へ発熱的に化学吸着し、且つ該拡散バリア層及び該金属層上で発熱性の還元を受けるのに適合した有機金属前駆物質錯体であって、該金属層の金属と、電子求引基を含む配位子とを含む有機金属前駆物質錯体。
- WN(111)表面へ及び銅表面へ発熱的に化学吸着し、且つ該WN(111)表面及び該銅表面上で発熱性の還元を受けるのに適合している、請求項3に記載の錯体。
- (a)該錯体が還元剤と接触する前に解離しないよう化学的に十分に安定であり、(b)該錯体が原子層堆積チャンバに気相で送給できるように十分に揮発性であり、且つ(c)該錯体の配位子が十分にパッシベーションされたバリア層と、該錯体によって該バリア層に被着された銅層とに対して反応性でない、請求項3に記載の錯体。
- R5とR6のおのおのが独立に、枝分かれしていないアルキル基である、請求項3に記載の錯体。
- 該少なくとも一つの電子求引基が、−CF3、−CN、−CHO、−NO2、−COCF3、−COF、アリール、−C(CF3)3及び−SO2CF3からなる群から選択される少なくとも一つのものである、請求項3に記載の錯体。
- R1、R2、R3、R4、R5及びR6のおのおのが独立に、少なくとも一つの電子求引基で置換されている、請求項3に記載の錯体。
- 式IIIによって表される、請求項3に記載の錯体。
- 式IVによって表される、請求項3に記載の錯体。
- 十分にパッシベーションされた拡散バリア層上に金属層を設けるための方法であって、
請求項1に記載の錯体を供給すること、
該拡散バリア層に該錯体を吸着させること、及び
該拡散バリア層上の該錯体を還元して該拡散バリア層上に原子層堆積によって該金属層を設けること、
を含む方法。 - 十分にパッシベーションされた拡散バリア層上に銅層を設けるための方法であって、
請求項3に記載の錯体を供給すること、
該拡散バリア層に該錯体を吸着させること、及び
該拡散バリア層上の該錯体を還元して該拡散バリア層上に原子層堆積によって該銅層を設けること、
を含む方法。 - 該拡散バリア層が、金属窒化物、金属炭化物、金属炭窒化物、金属ケイ素窒化物、金属ケイ素炭化物、金属ケイ素炭窒化物、又はそれらの混合物を含む、請求項15に記載の方法。
- 該拡散バリア層が、窒化クロム、窒化タンタル、窒化チタン、窒化タングステン、窒化モリブデン、窒化ジルコニウム、窒化バナジウム、及びそれらの混合物からなる群から選択される金属窒化物を含む、請求項15に記載の方法。
- 該吸着させる工程及び還元する工程が発熱性である、請求項15に記載の方法。
- 該拡散バリア層が(111)優先方位を有する実質的に純粋な窒化タングステンを含み、該吸着させる工程が該窒化タングステン(111)への及び該窒化タングステン(111)に被着された銅への該錯体の発熱性の吸着を含み、該還元する工程が該窒化タングステン(111)上での及び該窒化タングステン(111)に被着された銅の上での該錯体の発熱性の還元を含む、請求項15に記載の方法。
- 該供給する工程、吸着させる工程及び還元する工程を、銅層の厚さを調整するように複数回繰り返す、請求項15に記載の方法。
- (a)該錯体が該還元する工程の前に解離せず、(b)該方法が原子層堆積チャンバにおいて行われ、(c)該供給する工程が該錯体を気相で該原子層堆積チャンバに供給することを含み、(d)該錯体の配位子が該拡散バリア層及び/又は該銅層と反応しない、請求項15に記載の方法。
- 該錯体のR5とR6のおのおのが独立に、枝分かれしていないアルキル基である、請求項15に記載の方法。
- 該錯体の該少なくとも一つの電子求引基が、−CF3、−CN、−CHO、−NO2、−COCF3、−COF、アリール、−C(CF3)3及び−SO2CF3からなる群から選択される少なくとも一つのものである、請求項15に記載の方法。
- 該錯体のR1、R2、R3、R4、R5及びR6のおのおのが独立に、少なくとも一つの電子求引基で置換されている、請求項15に記載の方法。
- 該錯体が式IIIによって表される、請求項15に記載の方法。
- 該錯体が式IVによって表される、請求項15に記載の方法。
- 請求項13に記載の方法によって製造された金属層を含む基材。
- 請求項15に記載の方法によって製造された銅層を含む基材。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/941,157 US20090130466A1 (en) | 2007-11-16 | 2007-11-16 | Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013146863A Division JP2013243382A (ja) | 2007-11-16 | 2013-07-12 | 有機金属前駆物質錯体 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009132708A true JP2009132708A (ja) | 2009-06-18 |
Family
ID=40345488
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008292376A Withdrawn JP2009132708A (ja) | 2007-11-16 | 2008-11-14 | 有機金属前駆物質錯体 |
JP2013146863A Withdrawn JP2013243382A (ja) | 2007-11-16 | 2013-07-12 | 有機金属前駆物質錯体 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013146863A Withdrawn JP2013243382A (ja) | 2007-11-16 | 2013-07-12 | 有機金属前駆物質錯体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090130466A1 (ja) |
EP (1) | EP2060576A1 (ja) |
JP (2) | JP2009132708A (ja) |
KR (2) | KR101157701B1 (ja) |
CN (1) | CN101469005A (ja) |
TW (1) | TW200923119A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9069573B2 (en) | 2012-09-19 | 2015-06-30 | Industrial Technology Research Institute | Method for generating reduced snapshot image for booting and computing apparatus |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5843318B2 (ja) * | 2012-02-14 | 2016-01-13 | 株式会社Adeka | Ald法用窒化アルミニウム系薄膜形成用原料及び該薄膜の製造方法 |
US10464959B2 (en) | 2015-06-18 | 2019-11-05 | Intel Corporation | Inherently selective precursors for deposition of second or third row transition metal thin films |
KR101820237B1 (ko) | 2016-04-29 | 2018-01-19 | 한양대학교 산학협력단 | 가압식 금속 단원자층 제조 방법, 금속 단원자층 구조체 및 가압식 금속 단원자층 제조 장치 |
CN106929823A (zh) * | 2017-03-12 | 2017-07-07 | 苏州南尔材料科技有限公司 | 一种采用沉积法在硅基底上制备氧化钛薄膜的方法 |
CN110729490B (zh) * | 2019-10-21 | 2020-12-11 | 黑龙江大学 | 电极材料用钴负载氮化钒及其制备方法和一种电极材料 |
US11701802B2 (en) | 2019-11-05 | 2023-07-18 | GM Global Technology Operations LLC | Enthalpy-driven self-hardening process at the polymeric/metal layer interface with an interdiffusion process |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4039449A1 (de) * | 1990-12-11 | 1992-06-17 | Bayer Ag | Verfahren zur herstellung eines kupfer-i-formamidin-komplexes |
RU2146260C1 (ru) * | 1998-11-04 | 2000-03-10 | Институт элементоорганических соединений им. А.Н.Несмеянова РАН | Полифторированные дииминаты металлов в качестве предшественников для металлизации различных твердых поверхностей и для получения металлических зеркал |
JP2003060081A (ja) * | 2001-08-09 | 2003-02-28 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2005520053A (ja) * | 2002-01-18 | 2005-07-07 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 原子層堆積によって銅薄膜を堆積させるための揮発性銅(ii)錯体 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5019531A (en) * | 1988-05-23 | 1991-05-28 | Nippon Telegraph And Telephone Corporation | Process for selectively growing thin metallic film of copper or gold |
US5094701A (en) * | 1990-03-30 | 1992-03-10 | Air Products And Chemicals, Inc. | Cleaning agents comprising beta-diketone and beta-ketoimine ligands and a process for using the same |
US5098516A (en) * | 1990-12-31 | 1992-03-24 | Air Products And Chemicals, Inc. | Processes for the chemical vapor deposition of copper and etching of copper |
US5085731A (en) * | 1991-02-04 | 1992-02-04 | Air Products And Chemicals, Inc. | Volatile liquid precursors for the chemical vapor deposition of copper |
US5242860A (en) * | 1991-07-24 | 1993-09-07 | Applied Materials, Inc. | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation |
KR970001883B1 (ko) * | 1992-12-30 | 1997-02-18 | 삼성전자 주식회사 | 반도체장치 및 그 제조방법 |
JP3201061B2 (ja) * | 1993-03-05 | 2001-08-20 | ソニー株式会社 | 配線構造の製造方法 |
KR100320364B1 (ko) * | 1993-03-23 | 2002-04-22 | 가와사키 마이크로 엘렉트로닉스 가부시키가이샤 | 금속배선및그의형성방법 |
JP3395299B2 (ja) * | 1993-11-08 | 2003-04-07 | ソニー株式会社 | 半導体装置の配線構造及び配線形成方法 |
JP3280803B2 (ja) * | 1994-08-18 | 2002-05-13 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
US5580823A (en) * | 1994-12-15 | 1996-12-03 | Motorola, Inc. | Process for fabricating a collimated metal layer and contact structure in a semiconductor device |
JP2789309B2 (ja) * | 1995-03-20 | 1998-08-20 | エルジイ・セミコン・カンパニイ・リミテッド | 高融点金属窒化膜の形成方法 |
US5776831A (en) * | 1995-12-27 | 1998-07-07 | Lsi Logic Corporation | Method of forming a high electromigration resistant metallization system |
US5891513A (en) * | 1996-01-16 | 1999-04-06 | Cornell Research Foundation | Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications |
US5925225A (en) * | 1997-03-27 | 1999-07-20 | Applied Materials, Inc. | Method of producing smooth titanium nitride films having low resistivity |
JP3221381B2 (ja) * | 1997-11-21 | 2001-10-22 | 日本電気株式会社 | 半導体装置の製造方法 |
KR100256669B1 (ko) * | 1997-12-23 | 2000-05-15 | 정선종 | 화학기상증착 장치 및 그를 이용한 구리 박막 형성 방법 |
US6548402B2 (en) * | 1999-06-11 | 2003-04-15 | Applied Materials, Inc. | Method of depositing a thick titanium nitride film |
US6303490B1 (en) * | 2000-02-09 | 2001-10-16 | Macronix International Co., Ltd. | Method for barrier layer in copper manufacture |
US6743473B1 (en) * | 2000-02-16 | 2004-06-01 | Applied Materials, Inc. | Chemical vapor deposition of barriers from novel precursors |
US6475902B1 (en) * | 2000-03-10 | 2002-11-05 | Applied Materials, Inc. | Chemical vapor deposition of niobium barriers for copper metallization |
US6491978B1 (en) * | 2000-07-10 | 2002-12-10 | Applied Materials, Inc. | Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors |
US6562715B1 (en) * | 2000-08-09 | 2003-05-13 | Applied Materials, Inc. | Barrier layer structure for copper metallization and method of forming the structure |
US6423201B1 (en) * | 2000-08-23 | 2002-07-23 | Applied Materials, Inc. | Method of improving the adhesion of copper |
US6509266B1 (en) * | 2001-04-02 | 2003-01-21 | Air Products And Chemicals, Inc. | Halogen addition for improved adhesion of CVD copper to barrier |
US20030145790A1 (en) * | 2002-02-05 | 2003-08-07 | Hitoshi Sakamoto | Metal film production apparatus and metal film production method |
CN1688741A (zh) * | 2002-08-09 | 2005-10-26 | 纳幕尔杜邦公司 | 用于铜金属沉积的铜的吡咯基络合物 |
US6869876B2 (en) * | 2002-11-05 | 2005-03-22 | Air Products And Chemicals, Inc. | Process for atomic layer deposition of metal films |
US20040247905A1 (en) * | 2003-04-16 | 2004-12-09 | Bradley Alexander Zak | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
US20050227007A1 (en) * | 2004-04-08 | 2005-10-13 | Bradley Alexander Z | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
US7311946B2 (en) * | 2003-05-02 | 2007-12-25 | Air Products And Chemicals, Inc. | Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes |
US7166732B2 (en) * | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
US7604840B2 (en) * | 2004-08-16 | 2009-10-20 | E. I. Du Pont De Nemours And Company | Atomic layer deposition of copper using surface-activation agents |
-
2007
- 2007-11-16 US US11/941,157 patent/US20090130466A1/en not_active Abandoned
-
2008
- 2008-11-12 TW TW97143750A patent/TW200923119A/zh unknown
- 2008-11-14 JP JP2008292376A patent/JP2009132708A/ja not_active Withdrawn
- 2008-11-14 EP EP20080169165 patent/EP2060576A1/en not_active Withdrawn
- 2008-11-14 KR KR1020080113251A patent/KR101157701B1/ko not_active IP Right Cessation
- 2008-11-14 CN CNA2008101762064A patent/CN101469005A/zh active Pending
-
2011
- 2011-12-30 KR KR1020110146889A patent/KR20120006966A/ko not_active Application Discontinuation
-
2013
- 2013-07-12 JP JP2013146863A patent/JP2013243382A/ja not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4039449A1 (de) * | 1990-12-11 | 1992-06-17 | Bayer Ag | Verfahren zur herstellung eines kupfer-i-formamidin-komplexes |
RU2146260C1 (ru) * | 1998-11-04 | 2000-03-10 | Институт элементоорганических соединений им. А.Н.Несмеянова РАН | Полифторированные дииминаты металлов в качестве предшественников для металлизации различных твердых поверхностей и для получения металлических зеркал |
JP2003060081A (ja) * | 2001-08-09 | 2003-02-28 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2005520053A (ja) * | 2002-01-18 | 2005-07-07 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 原子層堆積によって銅薄膜を堆積させるための揮発性銅(ii)錯体 |
Non-Patent Citations (5)
Title |
---|
JPN6011066453; HUO,J. and SOLANKI,R.: 'Characteristics of copper films produced via atomic layer deposition' Journal of Materials Research Vol.17, No.9, 2002, p.2394-2398 * |
JPN6011066455; JIANG,X. et al.: 'How bulky is a bulky ligand: Energetic consequences of steric constraint in ligand-directed cluster' Journal of the American chemical society Vol.127, 2005, p.15678-15679 * |
JPN6011066456; VAN VLIET,P.I. et al.: 'Complexes of N,N'-substituted formamidines' Journal of Organometallic Chemistry Vol.179, 1979, p.89-100 * |
JPN6011066459; LI,Z. et al.: 'Synthesis and characterization of copper(I) amidinates as precursors for atomic layer deposition(ALD' Inorganic Chemistry Vol.44, 2005, p.1728-1735 * |
JPN6011066461; LIM,B.S. et al.: 'Synthesis and characterization of volatile, thermally stable, reactive transition metal amidinates' Inorganic Chemistry Vol.42, 2003, p.7951-7958 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9069573B2 (en) | 2012-09-19 | 2015-06-30 | Industrial Technology Research Institute | Method for generating reduced snapshot image for booting and computing apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP2013243382A (ja) | 2013-12-05 |
KR101157701B1 (ko) | 2012-06-20 |
CN101469005A (zh) | 2009-07-01 |
US20090130466A1 (en) | 2009-05-21 |
KR20120006966A (ko) | 2012-01-19 |
KR20090050978A (ko) | 2009-05-20 |
TW200923119A (en) | 2009-06-01 |
EP2060576A1 (en) | 2009-05-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9850575B1 (en) | ALD of metal-containing films using cyclopentadienly compounds | |
JP7203111B2 (ja) | ビス(アルキル-アレーン)モリブデン前駆体を使用したモリブデンの蒸着 | |
JP2013243382A (ja) | 有機金属前駆物質錯体 | |
Ramos et al. | Precursor design and reaction mechanisms for the atomic layer deposition of metal films | |
KR101506019B1 (ko) | 금속 카바이드 막의 기상 증착 | |
Gordon et al. | Trends in copper precursor development for CVD and ALD applications | |
US6475276B1 (en) | Production of elemental thin films using a boron-containing reducing agent | |
JP2011520251A5 (ja) | ||
TWI698545B (zh) | 沈積過渡金屬碳化物薄膜的方法、氣相沈積前驅組合物、容器及沈積反應器 | |
JP2005002099A (ja) | 金属含有膜のための前駆体 | |
JP2009504913A (ja) | 表面活性化剤および選択されたルテニウム錯体を用いるルテニウム含有フィルムの原子層蒸着 | |
JP2009504911A (ja) | 表面活性化剤を用いる金属含有フィルムの原子層蒸着 | |
EP1771595A1 (en) | Copper (ii) complexes for deposition of copper films by atomic layer deposition | |
TWI551708B (zh) | 使用金屬前驅物之原子層沉積法 | |
TWI481615B (zh) | 用於錳的原子層沉積之前驅物及方法 | |
US11286564B2 (en) | Tin-containing precursors and methods of depositing tin-containing films | |
CN116508134A (zh) | 使用抑制剂分子的高纵横比结构的沉积方法 | |
JP2023502764A (ja) | 原子層堆積のためのルテニウムピラゾレート前駆体及び類似法 | |
KR20040098115A (ko) | 원자층 증착 방법에 의한 Ru 박막 형성 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111220 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120319 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120323 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120612 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130312 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130712 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130723 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20130927 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20131031 |