JP2009099854A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009099854A5 JP2009099854A5 JP2007271428A JP2007271428A JP2009099854A5 JP 2009099854 A5 JP2009099854 A5 JP 2009099854A5 JP 2007271428 A JP2007271428 A JP 2007271428A JP 2007271428 A JP2007271428 A JP 2007271428A JP 2009099854 A5 JP2009099854 A5 JP 2009099854A5
- Authority
- JP
- Japan
- Prior art keywords
- opening
- silicon
- manufacturing
- semiconductor device
- contact plug
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 24
- 229910052710 silicon Inorganic materials 0.000 claims 24
- 239000010703 silicon Substances 0.000 claims 24
- 238000000034 method Methods 0.000 claims 16
- 238000004519 manufacturing process Methods 0.000 claims 14
- 239000004065 semiconductor Substances 0.000 claims 14
- 238000005530 etching Methods 0.000 claims 11
- 238000000151 deposition Methods 0.000 claims 9
- 239000012212 insulator Substances 0.000 claims 7
- 230000001590 oxidative effect Effects 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 239000007772 electrode material Substances 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 239000012782 phase change material Substances 0.000 claims 2
- 238000005498 polishing Methods 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 150000004770 chalcogenides Chemical class 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007271428A JP2009099854A (ja) | 2007-10-18 | 2007-10-18 | 縦型相変化メモリ装置の製造方法 |
| US12/285,686 US20090101885A1 (en) | 2007-10-18 | 2008-10-10 | Method of producing phase change memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007271428A JP2009099854A (ja) | 2007-10-18 | 2007-10-18 | 縦型相変化メモリ装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009099854A JP2009099854A (ja) | 2009-05-07 |
| JP2009099854A5 true JP2009099854A5 (https=) | 2010-11-04 |
Family
ID=40562547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007271428A Pending JP2009099854A (ja) | 2007-10-18 | 2007-10-18 | 縦型相変化メモリ装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20090101885A1 (https=) |
| JP (1) | JP2009099854A (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130082232A1 (en) | 2011-09-30 | 2013-04-04 | Unity Semiconductor Corporation | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells |
| WO2012063495A1 (ja) | 2010-11-12 | 2012-05-18 | パナソニック株式会社 | 不揮発性半導体記憶素子の製造方法 |
| JP5148025B2 (ja) | 2010-11-19 | 2013-02-20 | パナソニック株式会社 | 不揮発性半導体記憶素子の製造方法 |
| CN109426082A (zh) * | 2017-08-21 | 2019-03-05 | 上海微电子装备（集团）股份有限公司 | 一种掩模版的传输系统以及传输方法 |
| CN112909160B (zh) * | 2021-01-05 | 2022-04-08 | 华中科技大学 | 一种低操作功耗的相变存储单元及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04302162A (ja) * | 1991-03-28 | 1992-10-26 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US5847460A (en) * | 1995-12-19 | 1998-12-08 | Stmicroelectronics, Inc. | Submicron contacts and vias in an integrated circuit |
| JPH10335652A (ja) * | 1997-05-30 | 1998-12-18 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| KR100979710B1 (ko) * | 2003-05-23 | 2010-09-02 | 삼성전자주식회사 | 반도체 메모리 소자 및 제조방법 |
| KR100689831B1 (ko) * | 2005-06-20 | 2007-03-08 | 삼성전자주식회사 | 서로 자기정렬된 셀 다이오드 및 하부전극을 갖는 상변이기억 셀들 및 그 제조방법들 |
| US7589364B2 (en) * | 2005-11-02 | 2009-09-15 | Elpida Memory, Inc. | Electrically rewritable non-volatile memory element and method of manufacturing the same |
| JP4847743B2 (ja) * | 2005-11-28 | 2011-12-28 | エルピーダメモリ株式会社 | 不揮発性メモリ素子 |
-
2007
- 2007-10-18 JP JP2007271428A patent/JP2009099854A/ja active Pending
-
2008
- 2008-10-10 US US12/285,686 patent/US20090101885A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202930361U (zh) | 一种半导体器件 | |
| TWI749434B (zh) | 用於在三維記憶體裝置中形成階梯的方法和結構 | |
| JP2007311584A5 (https=) | ||
| CN104979203B (zh) | Mos晶体管和导电插塞的形成方法 | |
| JP6580164B2 (ja) | Ｆｉｎｆｅｔ等の薄い垂直半導体構造から形成された高密度コンデンサ | |
| US8119528B2 (en) | Nanoscale electrodes for phase change memory devices | |
| CN104282833B (zh) | 阻变存储器件及其制造方法 | |
| CN109727981A (zh) | 3d nand存储器及其形成方法 | |
| JP2009099854A5 (https=) | ||
| JP2006013487A5 (https=) | ||
| TW201801194A (zh) | 用於製造用於鰭式場效電晶體的源極-汲極接點的方法 | |
| CN105261630B (zh) | 制造相变化记忆体的方法 | |
| CN107978675A (zh) | 相变随机存储器存储单元及其制作方法、电子装置 | |
| CN104078563A (zh) | 相变存储器及其形成方法、相变存储器阵列 | |
| CN109003937A (zh) | 半导体存储器件的制作方法 | |
| CN105609539A (zh) | 自对准二维晶体材料场效应半导体器件及其制备方法 | |
| CN106298481A (zh) | 相变存储器及其形成方法 | |
| CN105428529B (zh) | 相变化记忆体的制造方法 | |
| CN103839919B (zh) | 电极的制造方法、熔丝装置及其制造方法 | |
| CN110875426B (zh) | 纳米管随机存储器及其形成方法 | |
| TW540159B (en) | Manufacturing method of flash memory source line | |
| CN103579122B (zh) | 快闪存储器元件的制造方法 | |
| CN115295722B (zh) | Rram下电极结构及其形成方法 | |
| CN103474334B (zh) | 半导体工艺 | |
| KR101060715B1 (ko) | 반도체 소자 및 그 제조 방법 |