JP2009099854A - 縦型相変化メモリ装置の製造方法 - Google Patents

縦型相変化メモリ装置の製造方法 Download PDF

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Publication number
JP2009099854A
JP2009099854A JP2007271428A JP2007271428A JP2009099854A JP 2009099854 A JP2009099854 A JP 2009099854A JP 2007271428 A JP2007271428 A JP 2007271428A JP 2007271428 A JP2007271428 A JP 2007271428A JP 2009099854 A JP2009099854 A JP 2009099854A
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JP
Japan
Prior art keywords
opening
silicon
manufacturing
phase change
lower electrode
Prior art date
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Pending
Application number
JP2007271428A
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English (en)
Japanese (ja)
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JP2009099854A5 (https=
Inventor
Akiyoshi Seko
明義 世古
Natsuki Sato
夏樹 佐藤
Isamu Asano
勇 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
Elpida Memory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elpida Memory Inc filed Critical Elpida Memory Inc
Priority to JP2007271428A priority Critical patent/JP2009099854A/ja
Priority to US12/285,686 priority patent/US20090101885A1/en
Publication of JP2009099854A publication Critical patent/JP2009099854A/ja
Publication of JP2009099854A5 publication Critical patent/JP2009099854A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2007271428A 2007-10-18 2007-10-18 縦型相変化メモリ装置の製造方法 Pending JP2009099854A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007271428A JP2009099854A (ja) 2007-10-18 2007-10-18 縦型相変化メモリ装置の製造方法
US12/285,686 US20090101885A1 (en) 2007-10-18 2008-10-10 Method of producing phase change memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007271428A JP2009099854A (ja) 2007-10-18 2007-10-18 縦型相変化メモリ装置の製造方法

Publications (2)

Publication Number Publication Date
JP2009099854A true JP2009099854A (ja) 2009-05-07
JP2009099854A5 JP2009099854A5 (https=) 2010-11-04

Family

ID=40562547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007271428A Pending JP2009099854A (ja) 2007-10-18 2007-10-18 縦型相変化メモリ装置の製造方法

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US (1) US20090101885A1 (https=)
JP (1) JP2009099854A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574957B2 (en) 2010-11-12 2013-11-05 Panasonic Corporation Method for manufacturing nonvolatile semiconductor memory element
US8889478B2 (en) 2010-11-19 2014-11-18 Panasonic Corporation Method for manufacturing nonvolatile semiconductor memory element, and nonvolatile semiconductor memory element
JP2020532119A (ja) * 2017-08-21 2020-11-05 シャンハイ マイクロ エレクトロニクス イクイプメント（グループ）カンパニー リミティド レチクルの搬送システム及び搬送方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
CN112909160B (zh) * 2021-01-05 2022-04-08 华中科技大学 一种低操作功耗的相变存储单元及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04302162A (ja) * 1991-03-28 1992-10-26 Mitsubishi Electric Corp 半導体装置の製造方法
JPH09181180A (ja) * 1995-12-19 1997-07-11 Sgs Thomson Microelectron Inc 半導体集積回路及びその製造方法
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004349709A (ja) * 2003-05-23 2004-12-09 Samsung Electronics Co Ltd 半導体メモリ素子およびその製造方法
JP2007129198A (ja) * 2005-11-02 2007-05-24 Elpida Memory Inc 不揮発性メモリ素子及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100689831B1 (ko) * 2005-06-20 2007-03-08 삼성전자주식회사 서로 자기정렬된 셀 다이오드 및 하부전극을 갖는 상변이기억 셀들 및 그 제조방법들
JP4847743B2 (ja) * 2005-11-28 2011-12-28 エルピーダメモリ株式会社 不揮発性メモリ素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04302162A (ja) * 1991-03-28 1992-10-26 Mitsubishi Electric Corp 半導体装置の製造方法
JPH09181180A (ja) * 1995-12-19 1997-07-11 Sgs Thomson Microelectron Inc 半導体集積回路及びその製造方法
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004349709A (ja) * 2003-05-23 2004-12-09 Samsung Electronics Co Ltd 半導体メモリ素子およびその製造方法
JP2007129198A (ja) * 2005-11-02 2007-05-24 Elpida Memory Inc 不揮発性メモリ素子及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574957B2 (en) 2010-11-12 2013-11-05 Panasonic Corporation Method for manufacturing nonvolatile semiconductor memory element
US8889478B2 (en) 2010-11-19 2014-11-18 Panasonic Corporation Method for manufacturing nonvolatile semiconductor memory element, and nonvolatile semiconductor memory element
JP2020532119A (ja) * 2017-08-21 2020-11-05 シャンハイ マイクロ エレクトロニクス イクイプメント（グループ）カンパニー リミティド レチクルの搬送システム及び搬送方法
JP7012143B2 (ja) 2017-08-21 2022-01-27 シャンハイ マイクロ エレクトロニクス イクイプメント（グループ）カンパニー リミティド レチクルの搬送システム及び搬送方法

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