JP2009081624A5 - - Google Patents
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- Publication number
- JP2009081624A5 JP2009081624A5 JP2007248882A JP2007248882A JP2009081624A5 JP 2009081624 A5 JP2009081624 A5 JP 2009081624A5 JP 2007248882 A JP2007248882 A JP 2007248882A JP 2007248882 A JP2007248882 A JP 2007248882A JP 2009081624 A5 JP2009081624 A5 JP 2009081624A5
- Authority
- JP
- Japan
- Prior art keywords
- sensor device
- semiconductor sensor
- electrode portion
- substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 69
- 239000010410 layer Substances 0.000 claims 31
- 239000000758 substrate Substances 0.000 claims 25
- 229910052751 metal Inorganic materials 0.000 claims 14
- 239000002184 metal Substances 0.000 claims 14
- 239000011241 protective layer Substances 0.000 claims 10
- 230000000149 penetrating effect Effects 0.000 claims 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 8
- 239000010703 silicon Substances 0.000 claims 8
- 239000004020 conductor Substances 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 229920005591 polysilicon Polymers 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000035515 penetration Effects 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007248882A JP2009081624A (ja) | 2007-09-26 | 2007-09-26 | 半導体センサ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007248882A JP2009081624A (ja) | 2007-09-26 | 2007-09-26 | 半導体センサ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009081624A JP2009081624A (ja) | 2009-04-16 |
| JP2009081624A5 true JP2009081624A5 (enExample) | 2010-10-28 |
Family
ID=40656061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007248882A Pending JP2009081624A (ja) | 2007-09-26 | 2007-09-26 | 半導体センサ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009081624A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5872163B2 (ja) | 2011-01-07 | 2016-03-01 | オムロン株式会社 | 音響トランスデューサ、および該音響トランスデューサを利用したマイクロフォン |
| US9380380B2 (en) | 2011-01-07 | 2016-06-28 | Stmicroelectronics S.R.L. | Acoustic transducer and interface circuit |
| CN106716636B (zh) * | 2014-09-17 | 2021-05-28 | 英特尔公司 | 具有使用穿硅过孔(tsv)的集成麦克风器件的管芯 |
| CN113582130B (zh) * | 2021-07-27 | 2024-01-05 | 绍兴中芯集成电路制造股份有限公司 | 基于晶圆制备mems器件的方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5452268A (en) * | 1994-08-12 | 1995-09-19 | The Charles Stark Draper Laboratory, Inc. | Acoustic transducer with improved low frequency response |
| DK1214864T3 (da) * | 1999-09-06 | 2003-08-25 | Sonionmems As | Siliciumbaseret sensorsystem |
| JP4244885B2 (ja) * | 2004-08-31 | 2009-03-25 | パナソニック株式会社 | エレクトレットコンデンサー |
| JP2006237401A (ja) * | 2005-02-25 | 2006-09-07 | Sanyo Electric Co Ltd | 半導体センサチップの製造方法 |
| JP4655017B2 (ja) * | 2005-11-25 | 2011-03-23 | パナソニック電工株式会社 | 音響センサ |
-
2007
- 2007-09-26 JP JP2007248882A patent/JP2009081624A/ja active Pending
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