JP2009081624A - 半導体センサ装置 - Google Patents
半導体センサ装置 Download PDFInfo
- Publication number
- JP2009081624A JP2009081624A JP2007248882A JP2007248882A JP2009081624A JP 2009081624 A JP2009081624 A JP 2009081624A JP 2007248882 A JP2007248882 A JP 2007248882A JP 2007248882 A JP2007248882 A JP 2007248882A JP 2009081624 A JP2009081624 A JP 2009081624A
- Authority
- JP
- Japan
- Prior art keywords
- sensor device
- electrode
- silicon
- semiconductor sensor
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 103
- 239000010703 silicon Substances 0.000 claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 230000000149 penetrating effect Effects 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 36
- 230000002093 peripheral effect Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 99
- 230000001681 protective effect Effects 0.000 abstract description 27
- 239000012528 membrane Substances 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 74
- 238000004519 manufacturing process Methods 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 238000005530 etching Methods 0.000 description 19
- 239000000428 dust Substances 0.000 description 18
- 239000011241 protective layer Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000004020 conductor Substances 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Landscapes
- Details Of Audible-Bandwidth Transducers (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007248882A JP2009081624A (ja) | 2007-09-26 | 2007-09-26 | 半導体センサ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007248882A JP2009081624A (ja) | 2007-09-26 | 2007-09-26 | 半導体センサ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009081624A true JP2009081624A (ja) | 2009-04-16 |
| JP2009081624A5 JP2009081624A5 (enExample) | 2010-10-28 |
Family
ID=40656061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007248882A Pending JP2009081624A (ja) | 2007-09-26 | 2007-09-26 | 半導体センサ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009081624A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9363608B2 (en) | 2011-01-07 | 2016-06-07 | Omron Corporation | Acoustic transducer |
| US9380380B2 (en) | 2011-01-07 | 2016-06-28 | Stmicroelectronics S.R.L. | Acoustic transducer and interface circuit |
| JP2017535981A (ja) * | 2014-09-17 | 2017-11-30 | インテル・コーポレーション | シリコン貫通ビア（ｔｓｖ）を使用したマイクロホンデバイスが一体化されているダイ |
| CN113582130A (zh) * | 2021-07-27 | 2021-11-02 | 绍兴中芯集成电路制造股份有限公司 | 基于晶圆制备mems器件的方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09508777A (ja) * | 1994-08-12 | 1997-09-02 | ザ チャールズ スターク ドレイパー ラボラトリー インク | 改良された低周波応答性を備えた音響トランスデューサ |
| JP2006074102A (ja) * | 2004-08-31 | 2006-03-16 | Matsushita Electric Ind Co Ltd | エレクトレットコンデンサー |
| JP2006237401A (ja) * | 2005-02-25 | 2006-09-07 | Sanyo Electric Co Ltd | 半導体センサチップの製造方法 |
| JP2007028671A (ja) * | 1999-09-06 | 2007-02-01 | Sonion Mems As | シリコンコンデンサーマイクロフォン |
| JP2007174622A (ja) * | 2005-11-25 | 2007-07-05 | Matsushita Electric Works Ltd | 音響センサ |
-
2007
- 2007-09-26 JP JP2007248882A patent/JP2009081624A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09508777A (ja) * | 1994-08-12 | 1997-09-02 | ザ チャールズ スターク ドレイパー ラボラトリー インク | 改良された低周波応答性を備えた音響トランスデューサ |
| JP2007028671A (ja) * | 1999-09-06 | 2007-02-01 | Sonion Mems As | シリコンコンデンサーマイクロフォン |
| JP2006074102A (ja) * | 2004-08-31 | 2006-03-16 | Matsushita Electric Ind Co Ltd | エレクトレットコンデンサー |
| JP2006237401A (ja) * | 2005-02-25 | 2006-09-07 | Sanyo Electric Co Ltd | 半導体センサチップの製造方法 |
| JP2007174622A (ja) * | 2005-11-25 | 2007-07-05 | Matsushita Electric Works Ltd | 音響センサ |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9363608B2 (en) | 2011-01-07 | 2016-06-07 | Omron Corporation | Acoustic transducer |
| US9380380B2 (en) | 2011-01-07 | 2016-06-28 | Stmicroelectronics S.R.L. | Acoustic transducer and interface circuit |
| US9843868B2 (en) | 2011-01-07 | 2017-12-12 | Stmicroelectronics S.R.L. | Acoustic transducer |
| US9936305B2 (en) | 2011-01-07 | 2018-04-03 | Stmicroelectronics S.R.L. | Acoustic transducer and microphone using the acoustic transducer |
| US20180176693A1 (en) | 2011-01-07 | 2018-06-21 | Stmicroelectronics S.R.L. | Acoustic transducer |
| US10405107B2 (en) | 2011-01-07 | 2019-09-03 | Stmicroelectronics S.R.L. | Acoustic transducer |
| US10484798B2 (en) | 2011-01-07 | 2019-11-19 | Stmicroelectronics S.R.L. | Acoustic transducer and microphone using the acoustic transducer |
| JP2017535981A (ja) * | 2014-09-17 | 2017-11-30 | インテル・コーポレーション | シリコン貫通ビア（ｔｓｖ）を使用したマイクロホンデバイスが一体化されているダイ |
| US10455308B2 (en) | 2014-09-17 | 2019-10-22 | Intel Corporation | Die with integrated microphone device using through-silicon vias (TSVs) |
| CN113582130A (zh) * | 2021-07-27 | 2021-11-02 | 绍兴中芯集成电路制造股份有限公司 | 基于晶圆制备mems器件的方法 |
| CN113582130B (zh) * | 2021-07-27 | 2024-01-05 | 绍兴中芯集成电路制造股份有限公司 | 基于晶圆制备mems器件的方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7898044B2 (en) | MEMS sensor and production method of MEMS sensor | |
| US11905164B2 (en) | Micro-electro-mechanical system acoustic sensor, micro-electro-mechanical system package structure and method for manufacturing the same | |
| US8043897B2 (en) | Method for forming micro-electro-mechanical system (MEMS) package | |
| JP3875240B2 (ja) | 電子部品の製造方法 | |
| KR101185291B1 (ko) | 음향 센서 및 그 제조 방법 | |
| KR101717837B1 (ko) | 압력파 및 주변 압력을 감지하기 위한 센서 구조체 | |
| US7880367B2 (en) | MEMS sensor | |
| KR101201642B1 (ko) | 음향 센서 및 그 제조 방법 | |
| EP2387255A2 (en) | Acoustic sensor and microphone | |
| US9029204B2 (en) | Method for manufacturing semiconductor device and method for manufacturing microphone | |
| JP4539155B2 (ja) | センサシステムの製造方法 | |
| JP2009081624A (ja) | 半導体センサ装置 | |
| JP2005340961A (ja) | 音波受信装置 | |
| CN111170268B (zh) | Mems器件及其制造方法 | |
| CN113697758B (zh) | 一种微机电系统麦克风晶圆级封装结构及方法 | |
| JP2010073919A (ja) | 半導体装置及びその製造方法 | |
| JP6582273B2 (ja) | Ｍｅｍｓ素子の製造方法 | |
| JP2009055198A (ja) | マイクロホン装置 | |
| US20170374473A1 (en) | Mems transducer package | |
| JP2009055490A (ja) | マイクロホン装置 | |
| JP4670699B2 (ja) | マイクロホンチップの実装方法、及びその方法で実装したマイクロホンチップ | |
| JP2008099004A (ja) | 静電容量型センサの製造方法および静電容量型センサ | |
| JP2006201158A (ja) | センサ装置 | |
| JP2012122838A (ja) | Ｍｅｍｓ素子及びｍｅｍｓ素子の製造方法 | |
| JP2021154437A (ja) | Ｍｅｍｓ構造体、ｍｅｍｓデバイス、及び多面付基板 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100910 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100922 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120117 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120309 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120529 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120723 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130205 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130702 |