CN106716636B - 具有使用穿硅过孔(tsv)的集成麦克风器件的管芯 - Google Patents
具有使用穿硅过孔(tsv)的集成麦克风器件的管芯 Download PDFInfo
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- CN106716636B CN106716636B CN201480081235.6A CN201480081235A CN106716636B CN 106716636 B CN106716636 B CN 106716636B CN 201480081235 A CN201480081235 A CN 201480081235A CN 106716636 B CN106716636 B CN 106716636B
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- H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
- H04R1/04—Structural association of microphone with electric circuitry therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
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- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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Abstract
本公开内容的实施例描述了具有使用穿硅过孔(TSV)和相关联的技术和构造的集成麦克风设备的管芯。在一个实施例中,一种装置包括具有第一侧和被设置为与第一侧相对的第二侧的半导体衬底,形成在半导体衬底的第一侧上的互连层,形成为穿过半导体衬底并且被配置为在半导体衬底的第一侧与半导体衬底的第二侧之间传送电信号的穿硅过孔(TSV),以及形成在半导体衬底的第二侧上并与TSV电气耦合的麦克风器件。可以描述和/或要求保护其它实施例。
Description
技术领域
本公开内容的实施例总体上涉及集成电路领域,并且更具体来说,涉及具有使用穿硅过孔(TSV)的集成麦克风器件的管芯以及相关联的技术和构造。
背景技术
麦克风器件广泛用于各种设备中,包括例如通信设备、助听器、水下声音辨别和噪声控制。朝电子设备的小型化的工业趋势当前驱动基于微机电系统(MEMS)的麦克风器件在半导体芯片中的集成。然而,由于半导体芯片上的有限空间和半导体芯片上的有源电路的脆弱本质,这种集成可能充满困难。基于MEMS的麦克风与有源电路的集成可能向周围环境打开窗口,其可能有助于将腐蚀物或其它有害材料引入有源电路。麦克风器件在半导体芯片的有源侧上的集成可能需要较大的、成本较高的芯片。
附图说明
通过以下具体实施方式结合附图,将容易理解实施例。为了有助于该描述,类似的附图标记标识类似的结构元件。在附图的图中,通过示例的方式而不是通过限制的方式示出了实施例。
图1示意性地示出了根据一些实施例的采用晶圆形式和采用分割形式的示例性管芯的顶视图。
图2示意性地示出了根据一些实施例的集成电路(IC)组件的截面侧视图。
图3示意性地示出了根据一些实施例的电容性换能器组件的截面侧视图。
图4示意性地示出了根据一些实施例的麦克风组件的截面侧视图。
图5示意性地示出了根据一些实施例的另一个麦克风组件的截面侧视图。
图6示意性地示出了根据一些实施例的根据第一构造的麦克风组件的透视图。
图7示意性地示出了根据一些实施例的根据第二构造的麦克风组件的透视图。
图8示意性地示出了根据一些实施例的根据第三构造的麦克风组件的透视图。
图9示意性地示出了根据一些实施例的麦克风器件的示例性接收器电路。
图10示意性地示出了根据一些实施例的包括延迟信号叠加的输出数据的相控阵模拟处理的示例。
图11示意性地示出了根据一些实施例的相控阵列麦克风的示例性侧面构造。
图12示意性地示出了根据一些实施例的使用相控阵列麦克风的示例性偏转波束。
图13示意性地示出了根据一些实施例的麦克风背板和膜片的示例性布局的透视图。
图14a-o示意性地示出了根据一些实施例的在不同的制造阶段期间的麦克风组件的截面侧视图。
图15示意性地示出了根据一些实施例的用于制造麦克风组件的方法的流程图。
图16示意性地示出了根据一些实施例的可以包括如本文中所描述的麦克风组件的示例性系统。
具体实施方式
本公开内容的实施例描述了具有使用穿硅过孔(TSV)的集成麦克风器件的管芯以及相关联的技术和构造。在以下具体实施方式中,参考形成了本说明书的一部分的附图,在整个附图中,相同的附图标记标示相同的部分,并且其中,通过说明性实施例的方式示出,在所述说明性实施例中可以实践本公开内容的主题。要理解的是,可以利用其它实施例,并且可以在不脱离本公开内容的范围的情况下作出结构或逻辑变化。因此,不应以限制性意义考虑以下具体实施方式,并且实施例的范围由所附权利要求及其等同物限定。
出于本公开内容的目的,短语“A和/或B”表示(A)、(B)、或(A和B)。出于本公开内容的目的,短语“A、B、和/或C”表示(A)、(B)、(C)、(A和B)、(A和C)、(B和C)、或(A、B和C)。
本说明书可以使用基于视角的描述,例如顶/底、中/外、之上/之下等等。这样的描述仅用于便于讨论并且不旨在将本文中所描述的实施例的应用限制为任何特定的取向。
本说明书可以使用短语“在一实施例中”或“在实施例中”,这些短语均指的是相同或不同实施例中的一个或多个实施例。此外,如针对本公开内容的实施例所使用的术语“包含”、“包括”、“具有”等是同义的。
在本文中可以使用术语“与……耦合”连同其派生词。“耦合”可以意指以下情况中的一种或多种。“耦合”可以意指两个或更多个元件直接物理或电接触。然而,“耦合”也可以意指两个或更多个元件彼此间接接触,但还仍然彼此协作或交互作用,并且可以意指一个或多个其它元件耦合或连接在被认为彼此耦合的元件之间。术语“直接耦合”可以意指两个或更多个元件直接接触。
在各个实施例中,短语“第一特征形成、沉积、或以其它方式设置在第二特征上”可以意指第一特征形成、沉积、或设置在第二特征之上,并且第一特征的至少一部分可以与第二特征的至少一部分直接接触(例如,直接物理和/或电接触)或间接接触(例如,具有在第一特征与第二特征之间的一个或多个其它特征)。
如本文中所使用的,术语“模块”可以指代以下项、以下项的部分、或包括以下项:专用集成电路(ASIC)、电子电路、处理器(共享的、专用的、或组)、和/或执行一个或多个软件或固件程序的存储器(共享的、专用的、或组)、组合逻辑电路、和/或提供所述功能的其它适合的部件。
图1示意性地示出了根据一些实施例的采用晶圆形式10和采用分割形式100的示例性管芯102的顶视图。在一些实施例中,管芯102可以是由诸如举例来说硅或其它适当的材料之类的半导体材料组成的晶圆11的多个管芯(例如,管芯102、103a、103b)中的一个。多个管芯可以形成在晶圆11的表面上。管芯中的每个管芯可以是包括如本文中描述的一个或多个麦克风器件104的半导体产品的重复单元。管芯102可以包括具有诸如举例来说为一个或多个晶体管器件或源极/漏极区的移动电荷载流子提供沟道路径的一个或多个沟道本体(例如,鳍状物结构、纳米线、平面体等等)之类的晶体管结构的电路。在一些实施例中,电路可以包括接收器电路、传感器电路或麦克风器件的其它电路。诸如举例来说接触部、过孔和/或沟槽之类的互连结构可以形成在一个或多个晶体管结构上并与一个或多个晶体管结构耦合以将电能传送至晶体管结构或者从晶体管结构传送电能。例如,互连结构可以与沟道体电气耦合,以为阈值电压和/或源极/漏极电流的传送提供栅极电极,以为晶体管器件的操作提供移动载流子。尽管为了简单起见,在图1中的特定构造中描绘了一个或多个麦克风器件104,但是要理解的是,在其它实施例中,可以在管芯102上以各种各样其它适合的布置来配置一个或多个麦克风器件104,并且一个或多个麦克风器件104可以具有比所描绘的尺寸更小或更大的尺寸。
在完成体现在管芯中的半导体产品的制造过程之后,晶圆11可以经历分割工艺,其中,管芯中的每个(例如,管芯102)彼此分隔开以提供半导体产品的分立“芯片”。晶圆11可以是各种尺寸中的任何尺寸。在一些实施例中,晶圆11具有从大约25.4mm到大约450mm的范围的直径。在其它实施例中,晶圆11可以包括其它尺寸和/或其它形状。在一些实施例中,晶圆11可以是减薄的晶圆。根据各种实施例,麦克风器件104可以设置在采用晶圆形式10或分割形式100的半导体衬底上。本文中所描述的麦克风器件104可以并入用于逻辑单元或存储器或两者组合的管芯102中。在一些实施例中,麦克风器件104可以是片上系统(SoC)组件的部分。
图2示意性地示出了根据一些实施例的集成电路(IC)组件200的截面侧视图。在一些实施例中,IC组件200可以包括与封装衬底121电气和/或物理耦合的一个或多个管芯(下文中为“管芯102”)。在一些实施例中,封装衬底121可以与电路板122电气耦合,如可以看到的。在一些实施例中,根据各种实施例,集成电路(IC)组件200可以包括管芯102以及封装衬底121和/或电路板122中的一个或多个。
管芯102可以表示使用诸如薄膜沉积、光刻、蚀刻等结合形成CMOS器件所使用的半导体制造技术、由半导体材料(例如,硅)制成的分立产品。在一些实施例中,一个或多个麦克风器件(例如,图1的一个或多个麦克风器件104)可以形成在管芯102上。在一些实施例中,管芯102可以是处理器、存储器、SoC或ASIC,可以包括处理器、存储器、SoC或ASIC,或可以是处理器、存储器、SoC或ASIC的一部分。在一些实施例中,电绝缘材料(例如,模塑料或底部填充材料(未示出))可以密封管芯102和/或管芯级互连结构106的至少一部分。
根据各种各样适合的构造,管芯102可以附接到封装衬底121,包括例如:所描绘的在倒装芯片构造中与封装衬底121直接耦合。在倒装芯片构造中,使用诸如凸块、柱体、或也可以将管芯102与封装衬底121电气耦合的其它适合的结构来将管芯102的包括电路的第一侧(有时被称为“有源侧”)S1附接到封装衬底121的表面。管芯102的第一侧S1可以包括有源器件,举例来说,例如晶体管器件。第二侧(有时被称为“无源侧”)S2可以被设置为与第一侧S1相对,如可以看到的。
管芯102可以通常包括半导体衬底102a、一个或多个器件层(下文中为“器件层102b”)和一个或多个互连层(下文中为“互连层102c”)。在一些实施例中,半导体衬底102a大体上可以由体半导体材料(举例来说,例如硅)组成。器件层102b可以表示诸如晶体管器件之类的有源器件形成在半导体衬底上的区域。器件层102b可以包括例如晶体管结构,例如晶体管器件的沟道本体和/或源极/漏极区。互连层102c可以包括被配置为从器件层102b中的有源器件传送电信号或将电信号传送到器件层102b中的有源器件的互连结构。例如,互连层102c可以包括水平线(例如,沟槽)和/或垂直插塞(例如,过孔)或其它适合的特征以提供电气路径选择和/或接触部。在一些实施例中,穿硅过孔(TSV)可以被形成为穿过半导体衬底102a以将器件层102b或互连层102c的电路与设置在第二侧S2上的特征电气耦合。尽管可以在整个说明书中使用“TSV”或“多个TSV”,但是要理解的是,这些术语并非必须将所描述的结构限制为仅基于硅的衬底。也就是说,“TSV”或“多个TSV”通常可以指代被形成为穿过其它适合的衬底材料的穿衬底过孔。在一些实施例中,器件层102b和互连层102c均可以表示多个层。
在一些实施例中,管芯级互连结构106可以与互连层102c电气耦合并且被配置为在管芯102与其它电器件之间传送电信号。电信号可以包括例如结合管芯102的操作使用的输入/输出(I/O)信号和/或电源/接地信号。
在一些实施例中,封装衬底121是具有核和/或内建层(举例来说,例如Ajinomoto内建膜(ABF)衬底)的基于环氧树脂的层压衬底。在其它实施例中,封装衬底121可以包括其它适合类型的衬底,包括例如由玻璃、陶瓷、或半导体材料形成的衬底。
封装衬底121可以包括被配置为将电信号传送到管芯102或从管芯102传送电信号的电气路径选择特征。电气路径选择特征可以包括例如设置在封装衬底121的一个或多个表面上的焊盘或迹线(未示出)和/或内部路径选择特征(未示出)(举例来说,例如将电信号传送穿过封装衬底121的沟槽、过孔或其它互连结构)。例如,在一些实施例中,封装衬底121可以包括诸如被配置为接收管芯102的相应的管芯级互连结构106的焊盘(未示出)之类的电气路径选择特征。
电路板122可以是由诸如环氧树脂层压件之类的电绝缘材料组成的印刷电路板(PCB)。例如,电路板122可以包括由例如以下材料组成的电绝缘层:聚四氟乙烯、诸如阻燃剂4(FR-4)、FR-1、棉纸之类的环氧酚醛棉纸以及诸如CEM-1或CEM-3之类的环氧树脂材料,或使用环氧树脂预浸材料层压在一起的玻璃织物材料。诸如迹线、沟槽、或过孔之类的互连结构(未示出)可以被形成为穿过电绝缘层以将管芯102的电信号传送穿过电路板122。在其它实施例中,电路板122可以由其它适合的材料组成。在一些实施例中,电路板122是母板(例如,图16的母板1602)。
举例来说,诸如焊球112之类的封装级互连件可以耦合到封装衬底121上和/或电路板122上的一个或多个焊盘(下文中为“焊盘110”),以形成对应的焊接接头,这些焊接接头被配置为在封装衬底121与电路板122之间进一步传送电信号。焊盘110可以由诸如金属之类的任何适合的导电材料组成,金属包括例如:镍(Ni)、铂(Pd)、金(Au)、银(Ag)、铜(Cu)、以及它们的组合。在其它实施例中,可以使用用于将封装衬底121与电路板122物理和/或电气耦合的其它适合的技术。
在其它实施例中,IC组件200可以包括各种各样其它适合的构造,包括例如倒装芯片和/或引线键合构造、内插件、包括系统级封装(SiP)和/或层叠封装(PoP)构造的多芯片封装构造的适合的组合。在一些实施例中,可以使用用于在管芯102与IC组件200的其它部件之间传送电信号的其它适合的技术。
图3示意性地示出了根据一些实施例的电容性换能器组件300的截面侧视图。根据各种实施例,电容性换能器组件300可以包括半导体衬底102a(例如,图1的管芯102或晶圆11的半导体衬底),其具有形成在半导体衬底102a的第一侧S1上的电路(例如,电路314)、形成在半导体衬底的第二侧S2上的背板316、以及形成为穿过半导体衬底102a的穿硅过孔(TSV)322a、322b、322c,如可以看到的。
在一些实施例中,电路314可以包括有源电路,举例来说,例如麦克风器件的接收器或传感器电路。在一些实施例中,电路314可以包括图2的器件层102b。电路314还可以包括一个或多个互连层的互连结构(例如,沟槽或过孔)。在一些实施例中,电路314可以包括图2的互连层102c。电路314可以被设置在电介质材料318中并且背板316可以被设置在电介质材料320中。电介质材料318、320可以包括任何适合的材料,举例来说,例如,二氧化硅(SiO2)等等。
在一些实施例中,可以通过在半导体衬底102a的第二侧S2上将再分布层(RDL)图案化来形成背板316。在一些实施例中,背板316可以包括被形成为穿过背板316的一个或多个开口316a。
如可以看到的,穿硅过孔(TSV)322a、322b、322c可以被形成为穿过半导体衬底102a。在一些实施例中,TSV中的一个或多个TSV可以是被配置为在第一侧S1上的电路314与诸如背板316之类的第二侧S2上的麦克风器件的部件之间传送电信号的信号TSV 322a。在一些实施例中,当在操作时,背板316可以被配置为作为电有源感测电极并且信号TSV 322a可以被配置为向电路314(例如,传感器电路)提供电连接。
TSV中的一个或多个TSV可以是被配置为在半导体衬底102a的第一侧S1与第二侧S2上的特征之间传送接地信号的接地TSV 322b。在一些实施例中,接地TSV 322b可以与第一侧S1上的互连结构324(例如,焊盘或接触部)耦合,该互连结构324被配置为与电容性换能器组件300外部的另一电器件(例如,另一管芯、封装衬底、内插件或电路板)电气耦合。
TSV中的一个或多个TSV可以是被配置为结构上支持诸如背板316之类的麦克风器件的部件的支撑TSV 322c。例如,支撑TSV 322c可以是起支撑柱体作用的虚设TSV。支撑TSV322c可以不被配置为在电路314与背板316之间传送电信号。在一个实施例中,支撑TSV322c可以包括被填充有电绝缘材料的至少一部分。
根据各种实施例,半导体衬底102a可以表示如结合图1所描述的采用晶圆形式10或分割形式100的管芯102的部分。在一些实施例中,电容性换能器组件300可以被用作为单个麦克风的部分或者被用作为麦克风阵列的部分。
图4示意性地示出了根据一些实施例的麦克风组件400的截面侧视图。在一些实施例中,麦克风组件400可以包括图3的电容性换能器组件300。例如,根据各种实施例,麦克风组件400可以包括半导体衬底102a(例如,图1的管芯102或晶圆11的半导体衬底),其具有形成在半导体衬底102a的第一侧S1上的电路(例如,电路314)、形成在半导体衬底的第二侧S2上的背板316、以及形成为穿过半导体衬底102a的穿硅过孔(TSV)322a、322b、322c,如可以看到的。麦克风组件400还可以包括与背板316耦合以形成电容器的膜片326,以及形成在半导体衬底102a中并与膜片326相邻(例如,在其下方)的腔室303,如可以看到的。
一个或多个开口316a可以被形成为穿过背板316和/或电介质材料320并且一个或多个开口326a可以被形成为穿过膜片326。牺牲材料325可以被设置在膜片326与背板316之间。牺牲材料325可以在麦克风组件400的制造期间被去除,以在被牺牲材料325占据的区域中提供气隙。在各种实施例中,腔室303、开口316a、326a、以及牺牲材料325的区域可以被填充有任何适合的气体以形成包括例如空气。开口316a、326a可以提供排气孔。在一些实施例中,麦克风组件400的麦克风器件(例如,图1的麦克风器件104)可以包括以下各项中的一项或多项:背板316、膜片326、腔室303、TSV 322a、322b、322c、开口316a、326a、被牺牲材料325占据的区域中的气隙和/或电路314。在与电路314相对的背侧(例如,第二侧S2)上形成麦克风器件的部件可以提供允许背侧上的麦克风器件的相控阵列的空间。根据举例来说诸如全方位或(超)心脏线之类的期望的声极图案(acoustic polar pattern)(方向性地),这种构造可以允许由数字延迟叠加的波束形成修改麦克风的声学响应并允许灵敏度增加。
在一些实施例中,半导体衬底102a和麦克风器件的部件可以安装在封装衬底332上。例如,在所描绘的实施例中,使用焊接凸块330将第一侧S1与封装衬底332耦合。诸如基于环氧树脂的底部填充剂或其它适合的电绝缘材料之类的底部填充材料328可以设置在半导体衬底102a与封装衬底332之间,如可以看到的。焊接凸块330可以被配置为在封装衬底332与电路314或麦克风器件的其它部件(包括例如,电源/地和/或输入/输出(I/O)信号)之间传送电信号。在其它实施例中,可以使用其它适合的技术和构造来将半导体衬底102a与封装衬底332耦合。
在一些实施例中,麦克风组件400可以包括被配置为覆盖麦克风器件的部件的盖334。盖334可以例如由金属组成并且可以与其上安装半导体衬底102a的封装衬底332耦合。盖334可以与封装衬底332(例如,倒装芯片衬底)耦合以形成包围管芯(例如,半导体衬底102a和形成在第一侧S1和第二侧S2上的特征)的腔室。
在一些实施例中,盖334可以包括一个或多个开口334a以提供麦克风组件400的声音端口来允许声音进入腔体以用于麦克风器件的操作。在一些实施例中,顶部端口(例如,一个或多个开口334a)可以适于平板设备。盖334可以为被盖334覆盖的麦克风组件400的部件提供电磁干预(EMI)屏蔽。根据各种实施例,盖334可以被配置为在器件制造、晶圆划片(例如,分割)和/或封装期间保护膜片。在其它实施例中,盖334可以具有其它构造和/或可以由其它适合的材料组成。
图5示意性地示出了根据一些实施例的另一麦克风组件500的截面侧视图。麦克风组件500可以与结合麦克风组件400描述的实施例一致,除了图5中的麦克风组件500不包括用于提供声音端口的一个或多个开口334a;相反,封装衬底332包括被形成为穿过封装衬底332以提供麦克风组件500的声音端口的一个或多个开口434a。在一些实施例中,封装衬底332是倒装芯片衬底并且半导体衬底102a是在倒装芯片构造中与倒装芯片衬底耦合的管芯的部分。如可以看到的,一个或多个开口434a可以为周围气体(例如,空气)提供通路以进入被盖334包围的区域。在一些实施例中,一个或多个开口434a可以是用于超声波的通风的导管。在一些实施例中,底部端口(例如,一个或多个开口434a)可以适用于移动电话设备。
图6示意性地示出了根据一些实施例的根据第一构造的麦克风组件600的透视图。在第一构造中,描绘了单个管芯的实施例,其中,举例来说诸如放大器、偏置电路、移相器、延迟叠加波束形成电路、sigma delta调制器、相移延迟(Td)、和/或功率生成和调节元件之类的有源电路614或接收器电路的其它部件设置在管芯的第一侧S1的器件层102b中,并且麦克风部件636(举例来说,例如一个或多个MEMS麦克风换能器的膜片和/或背板)设置在管芯的第二侧S2上。例如,麦克风组件可以是单个芯片集成的MEMS麦克风SoC。
麦克风部件636可以包括暴露于空气以允许检测声波的膜片(例如,在侧面(broadside)构造中)。在一些实施例中,所描绘的麦克风部件636中的每个部件可以表示麦克风器件的阵列中的分立麦克风器件。麦克风组件600的第一构造可以允许管芯的第一侧S1(例如,通过与互连层102c耦合的管芯互连结构)与另一管芯或诸如封装衬底之类的封装组件倒装芯片耦合,并且第二侧S2上的麦克风部件636可以直接暴露于外部声音阵面。
将膜片置于管芯的背侧(例如,第二侧S2)上可以允许管芯的定位(例如,在管芯的叠置体的顶部),以使得当管芯以倒装芯片的方式安装在另一管芯或衬底上时膜片暴露于即将到来的波阵面。与用于在管芯的有源侧上具有麦克风部件的管芯的引线键合相比,这种构造可以允许管芯的倒装芯片安装以将膜片较好地暴露于声波。使用倒装芯片构造可以有助于在较小的覆盖区是重要因素(举例来说,例如在诸如移动电话或可穿戴设备之类的较小设备中)的实施方式中应用麦克风组件600。相对于麦克风部件636与有源电路614一起放置在前侧(例如,第一侧S1)上,麦克风部件636放置在背侧(例如,第二侧S2)上可以允许减小的芯片尺寸(例如,尺寸上大约50%的减小)。膜片放置在管芯的背侧上还可以为更多的有源器件(例如,有源电路614)空出来管芯的前侧(例如,第一侧S1),而仍然在膜片与有源电路614之间提供短距离。此外,在倒装芯片构造中,有源电路614可以与环境屏蔽。在一些实施例中,麦克风部件636可以在有源电路614之后制造,并因此不会影响有源电路的处理。
根据各种实施例,与麦克风部件636对应的一个或多个TSV 622可以被形成为穿过半导体衬底102a,如可以看到的。在一些实施例中,可以使用被配置为传送电信号通过半导体衬底102a的一个或多个TSV 622来将有源电路614与麦克风部件636耦合。
图7示意性地示出了根据一些实施例的根据第二构造的麦克风组件700的透视图。在第二构造中,描绘了多管芯实施例,其中,有源电路614设置在与其上形成麦克风部件636的管芯电气耦合的管芯(例如,在所描绘的示例中的管芯702)上。例如,可以使用管芯级互连结构来将具有麦克风部件636的管芯与管芯702耦合以在有源电路614与麦克风部件636之间传送电信号。一个或多个互连结构(例如,过孔和/或沟槽)740可以形成在互连层102c中以在管芯702的有源电路614与具有麦克风部件636的管芯的第二侧S2之间按照路线电信号。例如,一个或多个互连结构740可以与一个或多个TSV 622耦合以为测试和/或用于测试(例如,通过探针的电子测试)麦克风组件700的参考信号提供路径选择。在一些实施例中,第二构造可以允许换能器在第二侧S2上的探测(例如,参考平面探测)。
在一些实施例中,管芯702还可以与另一管芯802耦合。例如,管芯702可以具有直接耦合到具有麦克风部件636的管芯的第一侧S1的有源侧(例如,包括有源器件)和使用管芯级互连结构106与其它管芯802耦合的无源侧。管芯702可以包括被配置为在管芯702与其它管芯802之间传送电信号的一个或多个TSV。在一个实施例中,管芯702可以是包括用于结合麦克风部件636一起使用的有源电路614的片上系统,并且管芯802可以是存储器或逻辑单元(例如,处理器)。在其它实施例中,管芯802或管芯的组合(例如,管芯702和管芯802)可以包括有源电路614。在其它实施例中,可以使用其它适合的技术(举例来说,例如引线键合,或其它内插件构造)来将麦克风部件636与另一个管芯上的有源电路614电气耦合。
图8示意性地示出了根据一些实施例的根据第三构造的麦克风组件800的透视图。在第三构造中,描绘了另一个多管芯实施例,其中,有源电路614设置在与其上形成麦克风部件636的管芯电气耦合的管芯(例如,在所描绘的示例中的管芯702)上。麦克风组件800可以与结合麦克风组件700描述的实施例一致,除了图8的麦克风组件800可以允许换能器在第一侧S1上的探测(例如,参考平面探测)。例如,在一些实施例中,可以形成一个或多个信令TSV 722、互连结构740和/或再分布层(RDL)特征723,以允许膜片从第一侧S1通过一个或多个信令TSV 722进行探测。
图9示意性地示出了根据一些实施例的麦克风器件(例如,图1的麦克风器件104)的示例性接收器电路900。接收器电路900可以表示麦克风输出的接收器电路。根据各种实施例,接收器电路900可以包括与放大器952和相移延迟954耦合的TSV-MEMS换能器950(例如,图3的电容性换能器组件300),如可以看到的。在一些实施例中,单独的麦克风的单音信号可以由相移延迟954转换为数字流。接收器电路900还可以包括功率发生器块956,其可以包括用于TSV-MEMS换能器950的管芯上高电压偏置发生器(电荷泵电路)和用于前置放大器952的无声功率调节器。在一些实施例中,本文中描述的电路314或有源电路614可以包括图9的接收器电路900。
图10示意性地示出了根据一些实施例的包括延迟信号叠加的输出数据的相控阵列模拟处理的示例性方法1000。在一些实施例中,麦克风阵列的信号处理方法1000可以由延迟叠加波束形成来执行。相控阵列可以以聚焦的“类波束”灵敏度图案来进行配置。例如,可以电子地控制举例来说诸如全方位、(超)心脏线之类的麦克风声学波束极性图案(方向性)以及波瓣方向。在一些实施例中,每个单独的麦克风的接收器电路(例如,图9的接收器电路900)可以将输出单音信号馈送到转向延迟阶段块1010(例如,滤波器)中,在转向延迟阶段块1010中,可编程的延迟可以被引入到单音信号中。示例1000可以包括被设置在共同的半导体衬底102a上并且被配置为处理分立麦克风器件的输出数据的可变电容器(例如,图3的电容性换能器组件300或图9的TSV-MEMS换能器950)和放大器(例如,图9的放大器952)的阵列。
图11示意性地示出了根据一些实施例的相控阵列麦克风的示例性侧面构造1100。在侧面构造1100中,麦克风器件(例如,麦克风器件1102、1103、1104)可以以侧面图案进行配置,以使得入射的声波(声波1105、1106)垂直于麦克风器件的线,如可以看到的。来自麦克风器件(例如,麦克风器件1102、1103、1104)的单独输出可以叠加在一起,如可以看到的。在图10中,可编程的延迟可以被引入到单音信号中。在一些实施例中,随后在图11中,每个单独的麦克风器件(例如,麦克风器件1102、1103、1104)的延迟单音信号可以应用可编程加权系数叠加在一起。所描述的信号处理可以通过麦克风阵列管芯上的数字信号处理来执行。在其它实施例中,由于它们的小的尺寸形状因子,多个麦克风阵列可以以端射构造来进行配置。在其它实施例中,麦克风器件可以以其它适合的方式来进行配置。
图12示意性地示出了根据一些实施例的使用相控阵列麦克风的示例性转向波束。与未转向的波束图案1204一起描绘了转向的波束图案1202。未转向的图案1204的顶点在0度处集中,并且转向的波束图案1202相对于转向的图案1202偏移。转向的波束图案1202可以朝噪声源转向以用于较好的噪声消除。在一些实施例中,所有的相控阵列波束形成电路都可以设置在也包含相控阵列麦克风的单个管芯上。
图13示意性地示出了根据一些实施例的麦克风背板316和膜片326的示例性布局1300的分解透视图。根据各种实施例,膜片326可以包括连接到管芯102的背侧(例如,第二侧S2)的多个延伸结构(“腿”)以使得膜片326悬挂在背板316之上。例如,如可以在所描绘的实施例中看到的,膜片326包括五条腿,它们与对应的RDL焊盘1333物理和电气耦合,在一些实施例中,RDL焊盘1333可以与一个或多个TSV(例如,图4的接地TSV 322b)电气和物理耦合。RDL焊盘1333与膜片326的腿之间的物理和电气耦合用垂直虚线表示以使本发明的方面难以理解,但是可以使用过孔或任何其它适合的互连结构来完成。在一些实施例中,RDL焊盘1333中的每个都可以与对应的接地TSV(例如,图4的接地TSV 322b)电气耦合。
背板316可以包括一个或多个开口316a以提供通向下层腔室(例如,图4的腔室303)中的气孔。在一些实施例中,RDL焊盘1335可以与背板316物理和电气耦合。在一些实施例中,RDL焊盘1335可以与诸如信号TSV(例如,图4的信号TSV 322a)之类的下层TSV电气和物理耦合。
在其它实施例中的其它适合构造中,膜片326可以包括比所描绘的更多或更少的腿和/或可以相对于背板316构造进行配置。截面区域1327可以表示结合图14a-o的描述所使用的截面区域的部分。
图14a-o示意性地示出了根据一些实施例的在不同的制造阶段期间的麦克风组件1400的截面侧视图。在一些实施例中,图14a-o的截面侧视图可以包括图13的截面区域1327。
参考图14a,麦克风组件1400被描绘为在管芯102的第一侧S1上形成电路(例如,器件层102b和/或互连层102c)、形成穿过管芯102的半导体衬底102a的穿硅过孔(TSV)322、以及在管芯102的第二侧S2上形成麦克风器件的背板316之后。在一些实施例中,可以在形成电路之后形成TSV322,并且在形成TSV之后执行形成背板316。管芯的第二侧S2可以在形成TSV之前被减薄或凹陷以提供具有较小厚度的管芯102。在其它实施例中,可以以其它适合的顺序执行动作。
可以使用任何适合的技术(包括例如被配置为在载体晶圆1444与管芯102之间形成临时接合的粘合剂1447)来将管芯102与诸如载体晶圆1444之类的临时载体组件耦合。载体晶圆1444可以用于在管芯102的第二侧S2上的制造期间促进管芯102的处理。
管芯102可以包括与互连层102c的电路耦合并被配置为在管芯102与要与管芯102耦合的其它部件之间传送电信号的管芯级互连结构106。互连层102c可以包括被配置为在器件层102b与管芯级互连结构106之间传送电信号的多层互连结构(例如,沟槽和/或过孔)。器件层102b可以包括用于结合麦克风器件的操作使用的诸如晶体管或电路的其它部件之类的有源器件。
TSV 322可以被形成为穿过半导体衬底102a并且TSV 322中的至少一些TSV可以与器件层102b和/或互连层102c电气耦合以在器件层102b或互连层102c与管芯102的第二侧S2上的麦克风器件的部件之间传送电信号。在一些实施例中,TSV 322中的单独TSV可以包括如可以看到地耦合的阻挡层和/或晶种层366、绝缘层364(例如,氧化物)和金属填充部分362。
可以形成一个或多个钝化层以保护下层部件免于暴露于水、氧气或其它污染物。在一些实施例中,钝化层320a可以形成在管芯102的第二侧S2上的半导体衬底102a上。在一些实施例中,可以在形成穿过管芯102的第二侧S2的TSV 322之前沉积钝化层320a。钝化层320a可以由包括例如氮化硅(SiN)或碳化硅(SiC)的各种各样适合的材料中的任何材料组成。
背板316可以形成在钝化层320a和TSV 322上。在一些实施例中,背板316可以由阻挡层和/或晶种层1316和举例来说诸如沉积在阻挡层和/或晶种层1316上的铜之类的金属1416组成。背板316可以使用用于制造再分布层(RDL)的常规技术来形成。在一些实施例中,钝化层320b可以形成在背板316和钝化层320a上,如可以看到的。钝化层320b可以由如针对钝化层320a所描述的类似材料组成。
参考图14b,麦克风组件1400被描绘为在沉积举例来说诸如光刻胶之类的光敏材料1460以涂覆第二侧S2之后,如可以看到的。可以使用例如光刻工艺(例如,曝光/显影)来将光敏材料1460图案化以在光敏材料1460中形成开口(例如,开口1460a、1460b、1460c)。例如,一个或多个开口1460a可以形成在要与膜片电气和物理耦合的背板316的一个或多个部分之上,并且一个或多个开口1460b、1460c可以形成在期望钝化层320a、320b中的开口(例如,用于气孔)的区域之上。
参考图14c,麦克风组件1400被描绘为在蚀刻经图案化的光敏材料1460以使得开口1460a、1460b、1460c延伸穿过(多个)钝化层320a、320b之后,如可以看到的。蚀刻工艺可以暴露背板316的下层金属1416或半导体衬底102a的半导体材料。在一些实施例中,蚀刻工艺可以包括干法蚀刻,举例来说,例如等离子体蚀刻。在其它实施例中,蚀刻工艺可以包括其它适合的技术。
参考图14d,麦克风组件1400被描绘为在去除光敏材料1460之后。可以例如使用任何适合的抗蚀剂剥离和/或清洁工艺来去除光敏材料1460。
参考图14e,麦克风组件1400被描绘为在管芯102的第二侧S2上沉积和图案化牺牲材料325之后。牺牲材料325可以被图案化以使得牺牲材料325被配置为在牺牲材料325上为形成膜片提供结构支架和/或模具。例如,在一些实施例中,牺牲材料325可以被形成为填充开口1460b和1460c,而同时使得开口1460a暴露。在一些实施例中,可以在小于结合使粘合剂1447脱胶所使用的处理温度的温度下形成牺牲材料325,该温度的范围可以为从大约175摄氏度到大约200摄氏度。牺牲材料325可以包括任何适合的材料,包括例如基于聚碳酸亚丙酯的材料、光刻胶、缓冲涂覆材料等。
参考图14f,麦克风组件1400被描绘为在管芯102的第二侧S2上沉积膜片326之后,如可以看到的。膜片326可以包括使用任何适合的技术(包括例如,物理气相沉积(PVD)、化学气相沉积(CVD)、等离子体增强CVD、和/或原子层沉积(ALD))沉积的一个或多个层。在一些实施例中,膜片326可以包括具有沉积在钝化层320b上的粘合层、牺牲材料325、和背板316的金属1416、沉积在粘合层上的薄膜金属层以及沉积在薄膜金属层上的覆盖层的叠置体层(未示出)。在一个实施例中,粘合层包括氮化钛(TiN),薄膜金属层包括铝(Al),并且覆盖层包括TiN。铝可以具有对于可使用的下游蚀刻工艺(例如,XeF2)的可兼容的蚀刻选择性。在其它实施例中,膜片326可以包括其它适合的材料。例如,在其它实施例中,薄膜金属层可以由铜或金组成。
参考图14g,麦克风组件1400被描绘为在膜片326上沉积和图案化光敏材料1464之后。例如,光敏材料1464可以被曝光和显影以在膜片326之上的期望去除膜片326的地方提供开口。
参考图14h,麦克风组件1400被描绘为在通过蚀刻去除膜片326的未保护的部分之后。蚀刻工艺可以包括例如湿法或干法蚀刻技术。在膜片326包括TiN/Al/TiN的叠置体的一个实施例中,可以使用基于氯的干法蚀刻工艺。
参考图14i,麦克风组件1400被描绘为在去除光敏材料1464之后。可以例如使用任何适合的抗蚀剂剥离和/或清洁工艺来去除光敏材料1464。
参考图14j,麦克风组件1400被描绘为在沉积和图案化腔体层1466之后。在一些实施例中,腔体层1466可以由诸如基于环氧树脂的材料或其它适合的材料之类的聚合物组成。在一些实施例中,聚合物可以是厚的、光可界定的和永久性的。可以使用任何适合的技术(包括例如旋涂工艺等等)来沉积腔体层1466的材料以涂覆管芯102的第二侧S2。腔体可以形成在背板316和膜片326之上的腔体层1466中,以使得腔体层1466形成部分容纳背板316和膜片326的边界,如可以看到的。在一些实施例中,可以通过图案化(例如,曝光/显影)来形成腔体。在一些实施例中,可以在腔体层1466的所沉积的材料上执行固化工艺。
参考图14k,麦克风组件1400被描绘为在去除牺牲材料325之后。可以使用任何适合的技术(包括例如,热分解或湿法/干法蚀刻技术)来去除牺牲材料325。空气可以填充通过去除牺牲材料325而形成的空隙。
参考图14l,麦克风组件1400被描绘为在半导体衬底102a中形成腔室303之后。根据各种实施例,可以通过穿过钝化层320a、320b中的开口的蚀刻工艺来形成腔室303。例如,在一个实施例中,可以使用二氟化氙(XeF2)等离子体蚀刻来在大约室温下利用对许多材料的高选择性在气相中各向同性地蚀刻半导体衬底102a的硅,这些材料包括二氧化硅、氮化硅、氮化钛、铝、铜、金、和许多聚合物。可以通过被形成为穿过钝化层320a、320b的排气孔(例如,图4的开口316a)来执行对半导体衬底102a的蚀刻以形成腔室303。在其它实施例中可以使用其它适合的蚀刻工艺和/或条件来形成腔室303。在一些实施例中,TSV 322中的一个或多个TSV可以被配置为在腔室303的区域中为背板316提供支撑柱体,如可以看到的。
参考图14m,麦克风组件1400被描绘为在用盖1434覆盖和/或包围膜片326和背板316之后。在一些实施例中,盖1434可以包括具有设置在表面上的粘合剂1436以形成盖晶圆与腔体层1466之间的接合的盖晶圆,以使得盖1434和腔体层1466形成围绕膜片326和背板316的外壳,如可以看到的。
盖1434可以由各种各样适合的材料(包括例如硅、不锈钢、诸如玻璃增强的环氧树脂或环氧树脂复合材料之类的基于聚合物的材料、或玻璃)中的任何材料组成。粘合剂1434可以由各种各样适合的材料(包括例如底部填充和/或模塑化合物材料)中的任何材料组成。
可以使用包括例如热固化的任何适合的技术来在盖1434与腔体层1466之间形成接合以设置粘合剂1434a。由盖1434和腔体层1466形成的外壳可以在随后的操控和/或处理期间(举例来说,例如在晶圆脱胶工艺期间)保护麦克风器件的部件免受机械损坏。
参考图14n,麦克风组件1400被描绘为在将具有包住的麦克风器件的管芯102从临时载体(例如,在所描绘的实施例中的载体晶圆1444)分离之后。根据各种实施例,使用热工艺以软化或破坏粘合剂1447来使载体晶圆1444从管芯102脱胶。在一些实施例中,脱胶工艺可以包括使图14m的麦克风组件1400的相对侧与机器人刀片和处理卡盘热接触。在这样的实施例中,在这种操控期间可以通过盖1434来使包住的麦克风器件免受损坏。
盖1434还可以在管芯102的分割工艺期间保护麦克风器件的部件。例如,管芯102可以安装到聚脂薄膜划片框架上,其中晶圆的麦克风侧附接到划片框架上的粘合剂以用于切割。当经分割的管芯从划片框架去除并被放置到带卷(tape-and-reel)上时,盖1434可以保护麦克风器件。
参考图14o,麦克风组件1400被描绘为在形成穿过盖1434的开口1434a以为麦克风组件1400提供声音端口孔之后。可以使用任何适合的技术(包括例如,机械和/或激光钻孔)来形成开口1434a。在一些实施例中,可以在麦克风组件1400的分割和/或最终封装之后形成开口1434a以减小在这种处理期间对膜片326的损坏风险。
图15示意性地示出了根据一些实施例的用于制造麦克风组件(例如,相应的图4、图5或图14o的麦克风组件400、500、或1400)的方法1500的流程图。方法1500可以与结合图1-4所描述的实施例一致,并且反之亦然。
在1502,方法1500可以包括提供具有第一侧(例如,图14a的第一侧S1)、被设置为与第一侧相对的第二侧(例如,图14a的第二侧S2)的半导体衬底(例如,图14a的半导体衬底102a)以及位于半导体衬底的第一侧上的互连层(例如,图14a的互连层102c)。在一些实施例中,半导体衬底还可以包括设置在互连层与半导体衬底之间的第一侧上的器件层(例如,图14a的器件层102b)。
在1504,方法1500可以包括形成穿过半导体衬底的穿硅过孔(TSV)(例如,图14a的TSV 322或图4的TSV 322a、322b、322c)。在一些实施例中,在形成互连层和/或器件层之后TSV可以被形成为穿过半导体衬底的第二侧。TSV可以被配置为在形成有源器件和/或互连件的电路的半导体衬底的第一侧与要形成麦克风器件的部件的半导体衬底的第二侧之间传送电信号。例如,在一个实施例中,TSV可以被配置为在器件层的有源器件与麦克风器件之间传送电信号。
在1506,方法1500可以包括在半导体衬底的第二侧上形成麦克风器件(例如,图1的麦克风器件104),麦克风器件与TSV电气耦合。在一些实施例中,形成麦克风器件可以包括在半导体衬底的第二侧上形成背板(例如,图4或图14o的背板316)。背板可以与TSV电气和/或物理耦合。在一些实施例中,形成背板可以包括对包括金属的再分布层进行图案化。
在一些实施例中,形成麦克风器件还可以包括在背板之上形成膜片(例如,图4或图14o的膜片326)以形成电容器。在一些实施例中,形成薄膜可以包括在背板上沉积牺牲材料(例如,图14e的牺牲材料325)、在牺牲材料上沉积膜片的材料、以及去除牺牲材料。
在一些实施例中,形成麦克风器件还可以包括邻近膜片或在膜片下方在半导体衬底中形成腔室(例如,图4或图14l的腔室303)。可以根据结合图14l所描述的技术来形成腔室。
在一些实施例中,形成麦克风器件可以包括用盖(例如,图4的盖334或图14m的盖1434)覆盖麦克风器件的部件。在形成麦克风的过程的至少部分期间(例如,结合图14a-m所描述的动作)半导体衬底可以与临时载体(例如,图14m的载体晶圆1444)耦合,并且在用盖覆盖麦克风器件之后,半导体衬底可以从临时载体去耦合。
各种操作以最有助于理解所要求保护的主题的方式依次被描述为多个分立的操作。然而,描述的顺序不应被解释为暗示这些操作必须是顺序相关的。可以使用任何适合的硬件和/或软件将本公开内容的实施例实施到系统中以按照需要进行配置。
图16示意性地示出了根据一些实施例的可以包括如本文中所描述的麦克风组件(例如,相应的图4、图5和图14o的麦克风组件400、500或1400)的示例性系统(例如,计算设备1600)。计算设备1600的部件可以容纳在外壳(例如,壳体1608)中。母板1602可以包括多个部件,包括但不限于处理器1604和至少一个通信芯片1606。处理器1604可以物理和电气地耦合到母板1602。在一些实施方式中,至少一个通信芯片1606也物理和电气地耦合到母板1602。在另外的实施方式中,通信芯片1606可以是处理器1604的部分。
根据其应用,计算设备1600可以包括可以或可以不物理地和电气地耦合到母板1602的其它部件。这些其它部件可以包括但不限于麦克风器件、易失性存储器(例如,动态随机存取存储器(DRAM))、非易失性存储器(例如,只读存储器(ROM))、闪速存储器、图形处理器、数字信号处理器、密码协处理器、芯片组、天线、显示器、触摸屏显示器、触摸屏控制器、电池、音频编解码器、视频编解码器、功率放大器、全球定位系统(GPS)设备、罗盘、盖革计数器、加速度计、陀螺仪、扬声器、相机、以及大容量储存设备(例如硬盘驱动器、光盘(CD)、数字多功能盘(DVD)等等)。
通信芯片1606可以实现无线通信,以用于将数据转移到计算设备1600以及从计算设备1600转移数据。术语“无线”及其派生词可以用于描述可通过使用经调制的电磁辐射来经由非固态介质传送数据的电路、设备、系统、方法、技术、通信信道等。该术语并不暗示相关联的设备不包含任何导线,尽管在一些实施例中它们可能不包含导线。通信芯片1606可以实施多个无线标准或协议中的任何标准或协议,这些标准或协议包括但不限于电气电子工程师学会(IEEE)标准,包括Wi-Fi(IEEE 802.11系列)、IEEE802.16标准(例如,IEEE802.16-2005修订)、长期演进(LTE)计划连同任何修订、更新、和/或修正(例如,高级LTE计划、超移动宽带(UMB)计划(也称为“3GPP2”)、等等)。IEEE 802.16兼容的宽带无线接入(BWA)网络通常被称为WiMAX网络(代表微波接入的全球互操作性的首字母略缩词),其是通过IEEE 802.16标准的一致性和互操作性测试的产品的认证标志。通信芯片1606可以根据全球移动通信系统(GSM)、通用分组无线业务(GPRS)、通用移动通信系统(UMTS)、高速分组接入(HSPA)、演进的HSPA(E-HSPA)、或LET网络来进行操作。通信芯片1606可以根据增强数据GSM演进(EDGE)、GSM EDGE无线接入网络(GERAN)、通用陆地无线接入网络(UTRAN)、或演进的UTRAN(E-UTRAN)来进行操作。通信芯片1606可以根据码分多址(CDMA)、时分多址(TDMA)、增强数字无绳通信(DECT)、演进数据优化(EV-DO)、及其它们的衍生物,以及被命名为3G、4G、5G、及更高代的任何其它无线协议来进行操作。在其它实施例中,通信芯片1606可以根据其它无线协议来进行操作。
计算设备1600可以包括多个通信芯片1606。例如,第一通信芯片1606可以专用于较短距离的无线通信(例如Wi-Fi和蓝牙),并且第二通信芯片1606可以专用于较长距离的无线通信(例如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO以及其它)。
计算设备1600的处理器1604可以包括如本文中所描述的麦克风组件(例如,相应的图4、图5和图14o的麦克风组件400、500或1400)。例如,图1-2的管芯102可以安装在封装衬底(例如,封装衬底121)上,该封装衬底安装在诸如母板1602之类的电路板上。术语“处理器”可以指代对来自寄存器和/或存储器的电子数据进行处理以便将该电子数据转换成可以储存在寄存器和/或存储器中的其它电子数据的任何器件或器件的一部分。
通信芯片1606还可以包括如本文中所描述的麦克风组件(例如,相应的图4、图5和图14o的麦克风组件400、500或1400)。在另外的实施方式中,容纳在计算设备1600内的另一个部件(例如,SoC、ASIC、存储器器件或其它集成电路器件)可以包括如本文中所描述的麦克风组件(例如,相应的图4、图5和图14o的麦克风组件400、500或1400)。
在各种实施方式中,计算设备1600可以是移动计算设备、膝上型电脑、上网本、笔记本、超极本、智能电话、平板设备、个人数字助理(PDA)、超级移动PC、移动电话、台式计算机、服务器、打印机、扫描仪、监视器、机顶盒、娱乐控制单元、数码相机、便携式音乐播放器、或数字视频录像机。在另外的实施方式中,计算设备1600可以是处理数据的任何其它电子设备。
示例
根据各种实施例,本公开内容描述了一种装置。装置的示例1可以包括:具有第一侧和被设置为与第一侧相对的第二侧的半导体衬底、形成在半导体衬底的第一侧上的互连层、被形成为穿过半导体衬底并且被配置为在半导体衬底的第一侧与半导体衬底的第二侧之间传送电信号的穿硅过孔(TSV);以及形成在半导体衬底的第二侧上并与TSV电气耦合的麦克风器件。示例2可以包括示例1的装置,还包括形成在半导体衬底的第一侧上的器件层,其中,TSV被配置为在器件层的有源器件与麦克风器件之间传送电信号。示例3可以包括示例2的装置,其中,TSV是多个穿硅过孔(TSV)中的第一TSV,并且多个TSV中的第二TSV被配置为在结构上支撑麦克风器件并且不被配置为在器件层与麦克风器件之间传送电信号。示例4可以包括示例1的装置,其中,麦克风器件包括设置在半导体衬底的第二侧上并与TSV耦合的背板以及与背板耦合以形成电容器的膜片。示例5可以包括示例4的装置,其中,麦克风器件还包括形成在半导体衬底中、与膜片相邻的腔室。示例6可以包括示例4的装置,还包括盖,该盖被配置为覆盖麦克风器件。示例7可以包括示例6的装置,还包括设置在半导体衬底的第二侧上的钝化层,其中,钝化层设置在背板的至少一部分与半导体衬底之间,以及设置在钝化层上并具有形成在腔体层中的腔体的腔体层,其中,膜片设置在腔体中并且盖与腔体层耦合。示例8可以包括示例6的装置,其中,盖包括声音端口孔。示例9可以包括示例6的装置,还包括具有声音端口孔的倒装芯片衬底,其中,半导体衬底是以倒装芯片构造与倒装芯片衬底耦合的管芯的部分,盖与倒装芯片衬底耦合以形成腔体,管芯设置在腔体内,并且声音端口孔向腔体提供声音的通路。示例10可以包括示例1-5中任何示例的装置,其中,半导体衬底是第一管芯的部分,第一管芯与第二管芯耦合,并且第二管芯包括麦克风器件的接收器或传感器电路。示例11可以包括示例1-5中任何示例的装置,其中,麦克风器件是形成在半导体衬底的第二侧上的多个麦克风器件中的一个。
根据各种实施例,本公开内容描述了一种方法。方法的示例12可以包括:提供具有第一侧、被设置为与第一侧相对的第二侧的半导体衬底,以及位于半导体衬底的第一侧上的互连层;形成穿过半导体衬底的穿硅过孔(TSV),TSV被配置为在半导体衬底的第一侧与半导体衬底的第二侧之间传送电信号;以及在半导体衬底的第二侧上形成麦克风器件,该麦克风器件与TSV电气耦合。示例13可以包括示例12的方法,其中,提供半导体衬底还包括提供具有形成在半导体衬底的第一侧上的器件层的半导体衬底,其中,TSV被配置为在器件层的有源器件与麦克风器件之间传送电信号。示例14可以包括示例12的方法,其中,形成麦克风器件包括在半导体衬底的第二侧上形成背板,背板与TSV耦合以及在背板之上形成膜片以形成电容器。示例15可以包括示例14的方法,其中,形成膜片包括:在背板上沉积牺牲材料,在牺牲材料上沉积膜片的材料,以及去除牺牲材料。示例16可以包括示例14的方法,还包括在半导体衬底中形成与膜片相邻的腔室。示例17可以包括示例12的方法,还包括用盖覆盖麦克风器件。示例18可以包括示例17的方法,其中,在形成麦克风器件的过程的至少部分期间半导体衬底与临时载体耦合,并且在用盖覆盖麦克风器件之后,将半导体衬底与临时载体去耦合。
根据各种实施例,本公开内容描述了一种系统(例如,计算设备)。系统的示例19可以包括电路板以及与电路板电气耦合的管芯,管芯包括具有第一侧和被设置为与第一侧相对的第二侧的半导体衬底、形成在半导体衬底的第一侧上的互连层、形成为穿过半导体衬底并且被配置为在半导体衬底的第一侧与半导体衬底的第二侧之间传送电信号的穿硅过孔(TSV)、以及形成在半导体衬底的第二侧上并与TSV电气耦合的麦克风器件。示例20可以包括示例19的计算设备,其中,管芯与封装衬底耦合并且封装衬底与电路板耦合。示例21可以包括示例19中任何示例的计算设备,其中,计算设备是包括下列项中的一种或多种的移动计算设备:天线、显示器、触摸屏显示器、触摸屏控制器、电池、音频编解码器、视频编解码器、功率放大器、全球定位系统(GPS)设备、罗盘、盖革计数器、加速度计、陀螺仪、扬声器、和相机。
各种实施例可以包括以上所述的实施例的任何适合的组合,以上所述的实施例包括以结合形式(和)上文中(例如,“和”可以是“和/或”)所述的实施例的替代物(或)实施例。此外,一些实施例可以包括一个或多个制作的物品(例如,非暂态计算机可读介质),其具有存储在其上的指令,在执行指令时产生上述实施例中的任何实施例的动作。此外,一些实施例可以包括具有用于执行以上所述的实施例的各种操作的任何适合的模块的装置或系统。
对所例示的实施方式的以上描述(包括在摘要中所述的内容)并非旨在是详尽的或者将本公开内容地实施例局限于所公开的精确形式。如相关领域中的技术人员将认识到的,虽然出于说明性目的在本文中描述了具体的实施方式和示例,但在本公开内容的范围内的各种等效修改是可能的。
鉴于以上的具体实施方式,可以对本公开内容的实施例做出这些修改。在所附权利要求中所使用的术语不应被解释为将本公开内容的各个实施例局限于说明书和权利要求书中所公开的具体的实施方式。相反,范围要完全由根据权利要求诠释的建立的原则所解释的所附权利要求来确定。
Claims (16)
1.一种半导体装置,包括:
半导体衬底,所述半导体衬底具有第一侧和被设置为与所述第一侧相对的第二侧;
互连层,所述互连层形成在所述半导体衬底的所述第一侧上;
穿硅过孔(TSV),所述穿硅过孔(TSV)被形成为穿过所述半导体衬底并且被配置为在所述半导体衬底的所述第一侧与所述半导体衬底的所述第二侧之间传送电信号;
麦克风器件,所述麦克风器件形成在所述半导体衬底的所述第二侧上并与所述穿硅过孔电气耦合,其中,所述麦克风器件包括:
背板,所述背板设置在所述半导体衬底的所述第二侧上并与所述穿硅过孔耦合;以及
膜片,所述膜片与所述背板耦合以形成电容器;
盖,所述盖被配置为覆盖所述麦克风器件;
钝化层,所述钝化层设置在所述半导体衬底的所述第二侧上,其中,所述钝化层设置在所述背板的至少一部分与所述半导体衬底之间;以及
腔体层,所述腔体层设置在所述钝化层上并具有形成在所述腔体层中的腔体,其中,所述膜片设置在所述腔体中并且所述盖与所述腔体层耦合。
2.根据权利要求1所述的装置,还包括:
器件层,所述器件层形成在所述半导体衬底的所述第一侧上,其中,所述穿硅过孔被配置为在所述器件层的有源器件与所述麦克风器件之间传送电信号。
3.根据权利要求2所述的装置,其中:
所述穿硅过孔是多个穿硅过孔(TSV)中的第一穿硅过孔;并且
所述多个穿硅过孔中的第二穿硅过孔被配置为在结构上支撑所述麦克风器件并且不被配置为在所述器件层与所述麦克风器件之间传送电信号。
4.根据权利要求1所述的装置,其中,所述麦克风器件还包括:
腔室,所述腔室形成在所述半导体衬底中、与所述膜片相邻。
5.根据权利要求1所述的装置,其中,所述盖包括声音端口孔。
6.根据权利要求1所述的装置,还包括倒装芯片衬底,所述倒装芯片衬底包括声音端口孔,其中:
所述半导体衬底是以倒装芯片构造与所述倒装芯片衬底耦合的管芯的部分;
所述盖与所述倒装芯片衬底耦合以形成腔体;
所述管芯设置在所述腔体内;并且
所述声音端口孔向所述腔体提供声音的通路。
7.根据权利要求1-4中的任一项所述的装置,其中:
所述半导体衬底是第一管芯的部分;
所述第一管芯与第二管芯耦合;并且
所述第二管芯包括所述麦克风器件的接收器或传感器电路。
8.根据权利要求1-4中的任一项所述的装置,其中,所述麦克风器件是形成在所述半导体衬底的所述第二侧上的多个麦克风器件中的一个。
9.一种用于制造半导体装置的方法,包括:
提供具有第一侧、被设置为与所述第一侧相对的第二侧的半导体衬底、以及位于所述半导体衬底的所述第一侧上的互连层;
形成穿过所述半导体衬底的穿硅过孔(TSV),所述穿硅过孔被配置为在所述半导体衬底的所述第一侧与所述半导体衬底的所述第二侧之间传送电信号;
在所述半导体衬底的所述第二侧上形成钝化层;
在所述半导体衬底的所述第二侧上形成麦克风器件,所述麦克风器件与所述穿硅过孔电气耦合,其中,所述麦克风器件包括:
背板,所述背板设置在所述半导体衬底的所述第二侧上并与所述穿硅过孔耦合,其中,所述钝化层设置在所述背板的至少一部分与所述半导体衬底之间;以及
膜片,所述膜片与所述背板耦合以形成电容器;
形成腔体层,所述腔体层设置在所述钝化层上并具有形成在所述腔体层中的腔体,其中,所述膜片设置在所述腔体中;
形成盖,所述盖被配置为覆盖所述麦克风器件,其中,所述盖与所述腔体层耦合。
10.根据权利要求9所述的方法,其中,提供半导体衬底还包括提供具有形成在所述半导体衬底的所述第一侧上的器件层的半导体衬底,其中,所述穿硅过孔被配置为在所述器件层的有源器件与所述麦克风器件之间传送电信号。
11.根据权利要求9所述的方法,其中,形成所述膜片包括:
在所述背板上沉积牺牲材料;
在所述牺牲材料上沉积所述膜片的材料;以及
去除所述牺牲材料。
12.根据权利要求9所述的方法,还包括:
在所述半导体衬底中形成与所述膜片相邻的腔室。
13.根据权利要求9所述的方法,其中;
在形成所述麦克风器件的过程的至少部分期间所述半导体衬底与临时载体耦合;并且
在用所述盖覆盖所述麦克风器件之后,将所述半导体衬底与所述临时载体去耦合。
14.一种计算设备,包括:
电路板;以及
管芯,所述管芯与所述电路板电气耦合,所述管芯包括:
半导体衬底,所述半导体衬底具有第一侧和被设置为与所述第一侧相对的第二侧;
互连层,所述互连层形成在所述半导体衬底的所述第一侧上;
穿硅过孔(TSV),所述穿硅过孔(TSV)被形成为穿过所述半导体衬底并且被配置为在所述半导体衬底的所述第一侧与所述半导体衬底的所述第二侧之间传送电信号;以及
麦克风器件,所述麦克风器件形成在所述半导体衬底的所述第二侧上并与所述穿硅过孔电气耦合,其中,所述麦克风器件包括:
背板,所述背板设置在所述半导体衬底的所述第二侧上并与所述穿硅过孔耦合;以及
膜片,所述膜片与所述背板耦合以形成电容器;
盖,所述盖被配置为覆盖所述麦克风器件;
钝化层,所述钝化层设置在所述半导体衬底的所述第二侧上,其中,所述钝化层设置在所述背板的至少一部分与所述半导体衬底之间;以及
腔体层,所述腔体层设置在所述钝化层上并具有形成在所述腔体层中的腔体,其中,所述膜片设置在所述腔体中并且所述盖与所述腔体层耦合。
15.根据权利要求14所述的计算设备,其中:
所述管芯与封装衬底耦合;并且
所述封装衬底与所述电路板耦合。
16.根据权利要求14-15中的任一项所述的计算设备,其中:
所述计算设备是包括下列项中的一种或多种的移动计算设备:天线、显示器、触摸屏显示器、触摸屏控制器、电池、音频编解码器、视频编解码器、功率放大器、全球定位系统(GPS)设备、罗盘、盖革计数器、加速度计、陀螺仪、扬声器、和相机。
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CN1203726C (zh) * | 1999-09-06 | 2005-05-25 | 声扬灵比股份有限公司 | 基于硅的传感器系统 |
WO2012051340A1 (en) * | 2010-10-12 | 2012-04-19 | Analog Devices, Inc. | Microphone package with embedded asic |
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JP6657545B2 (ja) | 2020-03-04 |
WO2016043738A1 (en) | 2016-03-24 |
TW201630153A (zh) | 2016-08-16 |
KR20170059969A (ko) | 2017-05-31 |
US10455308B2 (en) | 2019-10-22 |
JP2017535981A (ja) | 2017-11-30 |
CN106716636A (zh) | 2017-05-24 |
EP3195358A1 (en) | 2017-07-26 |
US20170245035A1 (en) | 2017-08-24 |
EP3195358A4 (en) | 2018-04-25 |
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