JP2009065146A - 半導体薄膜の形成方法および半導体薄膜の検査装置 - Google Patents

半導体薄膜の形成方法および半導体薄膜の検査装置 Download PDF

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Publication number
JP2009065146A
JP2009065146A JP2008208818A JP2008208818A JP2009065146A JP 2009065146 A JP2009065146 A JP 2009065146A JP 2008208818 A JP2008208818 A JP 2008208818A JP 2008208818 A JP2008208818 A JP 2008208818A JP 2009065146 A JP2009065146 A JP 2009065146A
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thin film
semiconductor thin
crystalline semiconductor
forming
film
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Abandoned
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JP2008208818A
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Japanese (ja)
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JP2009065146A5 (https=
Inventor
Hirohisa Amako
博久 尼子
Nobuhiko Umetsu
暢彦 梅津
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Sony Corp
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Sony Corp
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Priority to JP2008208818A priority Critical patent/JP2009065146A/ja
Publication of JP2009065146A publication Critical patent/JP2009065146A/ja
Priority to US12/537,299 priority patent/US8404498B2/en
Priority to CN2009101613844A priority patent/CN101651093B/zh
Publication of JP2009065146A5 publication Critical patent/JP2009065146A5/ja
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mathematical Physics (AREA)
  • Recrystallisation Techniques (AREA)
JP2008208818A 2007-08-15 2008-08-14 半導体薄膜の形成方法および半導体薄膜の検査装置 Abandoned JP2009065146A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008208818A JP2009065146A (ja) 2007-08-15 2008-08-14 半導体薄膜の形成方法および半導体薄膜の検査装置
US12/537,299 US8404498B2 (en) 2007-08-15 2009-08-07 Method of inspecting semiconductor thin film by transmission imaging and inspection device for the same
CN2009101613844A CN101651093B (zh) 2007-08-15 2009-08-12 半导体薄膜形成方法和半导体薄膜检查装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007211734 2007-08-15
JP2008208818A JP2009065146A (ja) 2007-08-15 2008-08-14 半導体薄膜の形成方法および半導体薄膜の検査装置

Publications (2)

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JP2009065146A true JP2009065146A (ja) 2009-03-26
JP2009065146A5 JP2009065146A5 (https=) 2011-08-04

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US (1) US8404498B2 (https=)
JP (1) JP2009065146A (https=)
CN (1) CN101651093B (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160127768A (ko) * 2014-03-03 2016-11-04 코히런트 레이저시스템즈 게엠바하 운트 컴파니 카게 엑시머 레이저 어닐링 제어를 위한 모니터링 방법 및 장치
KR20170031810A (ko) * 2015-09-11 2017-03-22 삼성디스플레이 주식회사 결정화도 측정 장치 및 그 측정 방법
WO2018037756A1 (ja) * 2016-08-24 2018-03-01 株式会社日本製鋼所 レーザアニール装置、結晶化膜付き基板の検査方法、及び半導体装置の製造方法
KR20210054635A (ko) * 2019-11-05 2021-05-14 삼성디스플레이 주식회사 검사 방법 및 검사 장치
US11114300B2 (en) 2016-08-24 2021-09-07 The Japan Steel Works, Ltd. Laser annealing apparatus, inspection method of substrate with crystallized film, and manufacturing method of semiconductor device
WO2023013145A1 (ja) * 2021-08-04 2023-02-09 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8441643B2 (en) 2010-07-13 2013-05-14 Apple Inc. Manufacturing and testing techniques for electronic displays
CN102279161B (zh) * 2011-05-12 2012-11-07 广州市光机电技术研究院 一种自动测试分筛系统
JP5453372B2 (ja) * 2011-10-26 2014-03-26 シャープ株式会社 ポリシリコン結晶膜の検査方法および検査装置
KR20140101612A (ko) * 2013-02-12 2014-08-20 삼성디스플레이 주식회사 결정화 검사장치 및 결정화 검사방법
KR20140114542A (ko) * 2013-03-18 2014-09-29 삼성디스플레이 주식회사 레이저빔 어닐링 장치 및 그 제어방법
WO2021113485A1 (en) * 2019-12-04 2021-06-10 E Ink Corporation Variable electrode size area arrays on thin-film transistor based digital microfluidic devices for fine droplet manipulation

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05107032A (ja) * 1991-10-16 1993-04-27 Matsushita Electric Ind Co Ltd 実装基板外観検査方法
US5861952A (en) * 1992-11-16 1999-01-19 Canon Kabushiki Kaisha Optical inspection method and apparatus including intensity modulation of a light beam and detection of light scattered at an inspection position
US6005965A (en) * 1997-04-07 1999-12-21 Komatsu Ltd. Inspection apparatus for semiconductor packages
JP2001082925A (ja) * 1999-09-14 2001-03-30 Sony Corp 紫外光の焦点位置制御機構及び方法、並びに、検査装置及び方法
US6946394B2 (en) * 2000-09-20 2005-09-20 Kla-Tencor Technologies Methods and systems for determining a characteristic of a layer formed on a specimen by a deposition process
JP4715016B2 (ja) * 2001-02-15 2011-07-06 ソニー株式会社 ポリシリコン膜の評価方法
EP1329946A3 (en) * 2001-12-11 2005-04-06 Sel Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including a laser crystallization step
JP4668508B2 (ja) 2002-05-17 2011-04-13 シャープ株式会社 半導体結晶化方法
US6977775B2 (en) * 2002-05-17 2005-12-20 Sharp Kabushiki Kaisha Method and apparatus for crystallizing semiconductor with laser beams
US6781687B2 (en) * 2002-09-26 2004-08-24 Orbotech Ltd. Illumination and image acquisition system
JP4772261B2 (ja) 2002-10-31 2011-09-14 シャープ株式会社 表示装置の基板の製造方法及び結晶化装置
JP2004342875A (ja) 2003-05-16 2004-12-02 Fuji Photo Film Co Ltd レーザアニール装置
TW200503057A (en) * 2003-06-11 2005-01-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, method of manufacturing thin film transistor, thin film transistor, and display apparatus
TWI254792B (en) * 2003-07-01 2006-05-11 Au Optronics Corp Detecting method and device of laser crystalline silicon
JP4247081B2 (ja) 2003-09-24 2009-04-02 三菱電機株式会社 レーザアニール装置のレーザビーム強度モニタ方法とレーザアニール装置
JP3867724B2 (ja) * 2004-02-27 2007-01-10 オムロン株式会社 表面状態検査方法およびその方法を用いた表面状態検査装置ならびに基板検査装置
JP4826750B2 (ja) * 2005-04-08 2011-11-30 オムロン株式会社 欠陥検査方法およびその方法を用いた欠陥検査装置
JP2006349522A (ja) * 2005-06-16 2006-12-28 Fujifilm Holdings Corp 固体撮像素子の検査方法及びその装置
JP4855745B2 (ja) * 2005-09-27 2012-01-18 株式会社 日立ディスプレイズ 表示装置の製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160127768A (ko) * 2014-03-03 2016-11-04 코히런트 레이저시스템즈 게엠바하 운트 컴파니 카게 엑시머 레이저 어닐링 제어를 위한 모니터링 방법 및 장치
JP2017512382A (ja) * 2014-03-03 2017-05-18 コヒーレント レーザーシステムズ ゲーエムベーハー ウント コンパニー カーゲー エキシマレーザアニーリングの制御のための監視方法および装置
KR102154495B1 (ko) 2014-03-03 2020-09-10 코히런트 레이저시스템즈 게엠바하 운트 컴파니 카게 엑시머 레이저 어닐링 제어를 위한 모니터링 방법 및 장치
KR20170031810A (ko) * 2015-09-11 2017-03-22 삼성디스플레이 주식회사 결정화도 측정 장치 및 그 측정 방법
KR102659810B1 (ko) * 2015-09-11 2024-04-23 삼성디스플레이 주식회사 결정화도 측정 장치 및 그 측정 방법
WO2018037756A1 (ja) * 2016-08-24 2018-03-01 株式会社日本製鋼所 レーザアニール装置、結晶化膜付き基板の検査方法、及び半導体装置の製造方法
US11114300B2 (en) 2016-08-24 2021-09-07 The Japan Steel Works, Ltd. Laser annealing apparatus, inspection method of substrate with crystallized film, and manufacturing method of semiconductor device
KR20210054635A (ko) * 2019-11-05 2021-05-14 삼성디스플레이 주식회사 검사 방법 및 검사 장치
KR102863335B1 (ko) * 2019-11-05 2025-09-25 삼성디스플레이 주식회사 표시 장치의 검사 방법 및 검사 장치
WO2023013145A1 (ja) * 2021-08-04 2023-02-09 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法
JP2023023205A (ja) * 2021-08-04 2023-02-16 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法
JP7637595B2 (ja) 2021-08-04 2025-02-28 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法

Also Published As

Publication number Publication date
US20090298208A1 (en) 2009-12-03
CN101651093A (zh) 2010-02-17
CN101651093B (zh) 2012-01-11
US8404498B2 (en) 2013-03-26

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