CN101651093B - 半导体薄膜形成方法和半导体薄膜检查装置 - Google Patents

半导体薄膜形成方法和半导体薄膜检查装置 Download PDF

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Publication number
CN101651093B
CN101651093B CN2009101613844A CN200910161384A CN101651093B CN 101651093 B CN101651093 B CN 101651093B CN 2009101613844 A CN2009101613844 A CN 2009101613844A CN 200910161384 A CN200910161384 A CN 200910161384A CN 101651093 B CN101651093 B CN 101651093B
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thin film
semiconductor thin
crystalline semiconductor
transmission image
film
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Expired - Fee Related
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Chinese (zh)
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CN101651093A (zh
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尼子博久
梅津畅彦
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Sony Corp
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Sony Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mathematical Physics (AREA)
  • Recrystallisation Techniques (AREA)
CN2009101613844A 2007-08-15 2009-08-12 半导体薄膜形成方法和半导体薄膜检查装置 Expired - Fee Related CN101651093B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007211734 2007-08-15
JP2008208818 2008-08-14
JP2008208818A JP2009065146A (ja) 2007-08-15 2008-08-14 半導体薄膜の形成方法および半導体薄膜の検査装置
JP2008-208818 2008-08-14

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CN101651093A CN101651093A (zh) 2010-02-17
CN101651093B true CN101651093B (zh) 2012-01-11

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US (1) US8404498B2 (https=)
JP (1) JP2009065146A (https=)
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CN109643647A (zh) * 2016-08-24 2019-04-16 株式会社日本制钢所 激光退火装置、带晶化膜基底的检查方法及半导体器件制造方法

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US8441643B2 (en) 2010-07-13 2013-05-14 Apple Inc. Manufacturing and testing techniques for electronic displays
CN102279161B (zh) * 2011-05-12 2012-11-07 广州市光机电技术研究院 一种自动测试分筛系统
JP5453372B2 (ja) * 2011-10-26 2014-03-26 シャープ株式会社 ポリシリコン結晶膜の検査方法および検査装置
KR20140101612A (ko) * 2013-02-12 2014-08-20 삼성디스플레이 주식회사 결정화 검사장치 및 결정화 검사방법
KR20140114542A (ko) * 2013-03-18 2014-09-29 삼성디스플레이 주식회사 레이저빔 어닐링 장치 및 그 제어방법
US9335276B2 (en) * 2014-03-03 2016-05-10 Coherent Lasersystems Gmbh & Co. Kg Monitoring method and apparatus for control of excimer laser annealing
KR102659810B1 (ko) * 2015-09-11 2024-04-23 삼성디스플레이 주식회사 결정화도 측정 장치 및 그 측정 방법
WO2018037756A1 (ja) * 2016-08-24 2018-03-01 株式会社日本製鋼所 レーザアニール装置、結晶化膜付き基板の検査方法、及び半導体装置の製造方法
KR102863335B1 (ko) * 2019-11-05 2025-09-25 삼성디스플레이 주식회사 표시 장치의 검사 방법 및 검사 장치
WO2021113485A1 (en) * 2019-12-04 2021-06-10 E Ink Corporation Variable electrode size area arrays on thin-film transistor based digital microfluidic devices for fine droplet manipulation
JP7637595B2 (ja) * 2021-08-04 2025-02-28 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109643647A (zh) * 2016-08-24 2019-04-16 株式会社日本制钢所 激光退火装置、带晶化膜基底的检查方法及半导体器件制造方法
CN109643647B (zh) * 2016-08-24 2023-09-01 Jsw阿克迪纳系统有限公司 激光退火装置、带晶化膜基底的检查方法及半导体器件制造方法

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JP2009065146A (ja) 2009-03-26
US20090298208A1 (en) 2009-12-03
CN101651093A (zh) 2010-02-17
US8404498B2 (en) 2013-03-26

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