JP2009064841A5 - - Google Patents

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Publication number
JP2009064841A5
JP2009064841A5 JP2007229454A JP2007229454A JP2009064841A5 JP 2009064841 A5 JP2009064841 A5 JP 2009064841A5 JP 2007229454 A JP2007229454 A JP 2007229454A JP 2007229454 A JP2007229454 A JP 2007229454A JP 2009064841 A5 JP2009064841 A5 JP 2009064841A5
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JP
Japan
Prior art keywords
cylindrical electrode
charged particle
particle beam
lens
drawing apparatus
Prior art date
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Granted
Application number
JP2007229454A
Other languages
English (en)
Japanese (ja)
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JP5230148B2 (ja
JP2009064841A (ja
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Publication date
Application filed filed Critical
Priority to JP2007229454A priority Critical patent/JP5230148B2/ja
Priority claimed from JP2007229454A external-priority patent/JP5230148B2/ja
Priority to US12/184,586 priority patent/US7960703B2/en
Priority to TW097131736A priority patent/TWI408508B/zh
Priority to KR1020080081816A priority patent/KR100986651B1/ko
Publication of JP2009064841A publication Critical patent/JP2009064841A/ja
Publication of JP2009064841A5 publication Critical patent/JP2009064841A5/ja
Application granted granted Critical
Publication of JP5230148B2 publication Critical patent/JP5230148B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007229454A 2007-09-04 2007-09-04 荷電粒子線描画装置及びデバイス製造方法 Expired - Fee Related JP5230148B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007229454A JP5230148B2 (ja) 2007-09-04 2007-09-04 荷電粒子線描画装置及びデバイス製造方法
US12/184,586 US7960703B2 (en) 2007-09-04 2008-08-01 Charged-particle beam lithography apparatus and device manufacturing method
TW097131736A TWI408508B (zh) 2007-09-04 2008-08-20 荷電粒子束微影設備及裝置製造方法
KR1020080081816A KR100986651B1 (ko) 2007-09-04 2008-08-21 하전입자선 묘화장치 및 디바이스 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007229454A JP5230148B2 (ja) 2007-09-04 2007-09-04 荷電粒子線描画装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2009064841A JP2009064841A (ja) 2009-03-26
JP2009064841A5 true JP2009064841A5 (enExample) 2010-10-21
JP5230148B2 JP5230148B2 (ja) 2013-07-10

Family

ID=40405919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007229454A Expired - Fee Related JP5230148B2 (ja) 2007-09-04 2007-09-04 荷電粒子線描画装置及びデバイス製造方法

Country Status (4)

Country Link
US (1) US7960703B2 (enExample)
JP (1) JP5230148B2 (enExample)
KR (1) KR100986651B1 (enExample)
TW (1) TWI408508B (enExample)

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JP5970213B2 (ja) * 2012-03-19 2016-08-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6013089B2 (ja) * 2012-08-30 2016-10-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
TWI502616B (zh) 2014-08-08 2015-10-01 Nat Univ Tsing Hua 桌上型電子顯微鏡以及其廣域可調式磁透鏡
US9799484B2 (en) * 2014-12-09 2017-10-24 Hermes Microvision, Inc. Charged particle source
JP6480534B1 (ja) * 2017-09-26 2019-03-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム照射装置及び基板の帯電低減方法
JP2019212766A (ja) * 2018-06-05 2019-12-12 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
JP7771004B2 (ja) * 2021-07-14 2025-11-17 アイエムエス ナノファブリケーション ゲーエムベーハー 電磁レンズ及び荷電粒子光学装置
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

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JPS60201626A (ja) 1984-03-27 1985-10-12 Canon Inc 位置合わせ装置
JPS61190839A (ja) 1985-02-19 1986-08-25 Canon Inc 荷電粒子線装置
US4675524A (en) * 1985-03-11 1987-06-23 Siemens Aktiengesellschaft Scanning particle microscope with diminished boersch effect
JPS62183118A (ja) 1986-02-06 1987-08-11 Canon Inc アライメント装置及び方法
US5146090A (en) * 1990-06-11 1992-09-08 Siemens Aktiengesellschaft Particle beam apparatus having an immersion lens arranged in an intermediate image of the beam
JP3247700B2 (ja) * 1991-03-29 2002-01-21 株式会社日立製作所 走査形投影電子線描画装置および方法
US5770863A (en) * 1995-10-24 1998-06-23 Nikon Corporation Charged particle beam projection apparatus
JPH09129543A (ja) * 1995-11-01 1997-05-16 Nikon Corp 荷電粒子線転写装置
JP3927620B2 (ja) 1996-06-12 2007-06-13 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
US5929454A (en) 1996-06-12 1999-07-27 Canon Kabushiki Kaisha Position detection apparatus, electron beam exposure apparatus, and methods associated with them
US5912469A (en) * 1996-07-11 1999-06-15 Nikon Corporation Charged-particle-beam microlithography apparatus
US6069363A (en) * 1998-02-26 2000-05-30 International Business Machines Corporation Magnetic-electrostatic symmetric doublet projection lens
JP2000003847A (ja) 1998-06-15 2000-01-07 Canon Inc 荷電粒子線縮小転写装置及びデバイス製造方法
JP2000173889A (ja) * 1998-12-02 2000-06-23 Canon Inc 電子線露光装置、電子レンズ、ならびにデバイス製造方法
JP2000232052A (ja) 1999-02-09 2000-08-22 Nikon Corp 荷電粒子線転写露光装置
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JP2002343295A (ja) 2001-05-21 2002-11-29 Canon Inc 電子線露光装置、縮小投影系及びデバイス製造方法
TW579536B (en) 2001-07-02 2004-03-11 Zeiss Carl Semiconductor Mfg Examining system for the particle-optical imaging of an object, deflector for charged particles as well as method for the operation of the same
JP4468753B2 (ja) * 2004-06-30 2010-05-26 キヤノン株式会社 荷電粒子線露光装置及び該装置を用いたデバイス製造方法
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