JP5230148B2 - 荷電粒子線描画装置及びデバイス製造方法 - Google Patents

荷電粒子線描画装置及びデバイス製造方法 Download PDF

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Publication number
JP5230148B2
JP5230148B2 JP2007229454A JP2007229454A JP5230148B2 JP 5230148 B2 JP5230148 B2 JP 5230148B2 JP 2007229454 A JP2007229454 A JP 2007229454A JP 2007229454 A JP2007229454 A JP 2007229454A JP 5230148 B2 JP5230148 B2 JP 5230148B2
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JP
Japan
Prior art keywords
cylindrical electrode
charged particle
lens
particle beam
drawing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007229454A
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English (en)
Japanese (ja)
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JP2009064841A5 (enExample
JP2009064841A (ja
Inventor
進 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2007229454A priority Critical patent/JP5230148B2/ja
Priority to US12/184,586 priority patent/US7960703B2/en
Priority to TW097131736A priority patent/TWI408508B/zh
Priority to KR1020080081816A priority patent/KR100986651B1/ko
Publication of JP2009064841A publication Critical patent/JP2009064841A/ja
Publication of JP2009064841A5 publication Critical patent/JP2009064841A5/ja
Application granted granted Critical
Publication of JP5230148B2 publication Critical patent/JP5230148B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/145—Combinations of electrostatic and magnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04926—Lens systems combined
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1538—Space charge (Boersch) effect compensation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP2007229454A 2007-09-04 2007-09-04 荷電粒子線描画装置及びデバイス製造方法 Expired - Fee Related JP5230148B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007229454A JP5230148B2 (ja) 2007-09-04 2007-09-04 荷電粒子線描画装置及びデバイス製造方法
US12/184,586 US7960703B2 (en) 2007-09-04 2008-08-01 Charged-particle beam lithography apparatus and device manufacturing method
TW097131736A TWI408508B (zh) 2007-09-04 2008-08-20 荷電粒子束微影設備及裝置製造方法
KR1020080081816A KR100986651B1 (ko) 2007-09-04 2008-08-21 하전입자선 묘화장치 및 디바이스 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007229454A JP5230148B2 (ja) 2007-09-04 2007-09-04 荷電粒子線描画装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2009064841A JP2009064841A (ja) 2009-03-26
JP2009064841A5 JP2009064841A5 (enExample) 2010-10-21
JP5230148B2 true JP5230148B2 (ja) 2013-07-10

Family

ID=40405919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007229454A Expired - Fee Related JP5230148B2 (ja) 2007-09-04 2007-09-04 荷電粒子線描画装置及びデバイス製造方法

Country Status (4)

Country Link
US (1) US7960703B2 (enExample)
JP (1) JP5230148B2 (enExample)
KR (1) KR100986651B1 (enExample)
TW (1) TWI408508B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5970213B2 (ja) * 2012-03-19 2016-08-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6013089B2 (ja) 2012-08-30 2016-10-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
TWI502616B (zh) 2014-08-08 2015-10-01 Nat Univ Tsing Hua 桌上型電子顯微鏡以及其廣域可調式磁透鏡
US9799484B2 (en) * 2014-12-09 2017-10-24 Hermes Microvision, Inc. Charged particle source
JP6480534B1 (ja) * 2017-09-26 2019-03-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム照射装置及び基板の帯電低減方法
JP2019212766A (ja) * 2018-06-05 2019-12-12 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12500060B2 (en) * 2021-07-14 2025-12-16 Ims Nanofabrication Gmbh Electromagnetic lens
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201626A (ja) 1984-03-27 1985-10-12 Canon Inc 位置合わせ装置
JPS61190839A (ja) 1985-02-19 1986-08-25 Canon Inc 荷電粒子線装置
US4675524A (en) * 1985-03-11 1987-06-23 Siemens Aktiengesellschaft Scanning particle microscope with diminished boersch effect
JPS62183118A (ja) 1986-02-06 1987-08-11 Canon Inc アライメント装置及び方法
US5146090A (en) * 1990-06-11 1992-09-08 Siemens Aktiengesellschaft Particle beam apparatus having an immersion lens arranged in an intermediate image of the beam
JP3247700B2 (ja) * 1991-03-29 2002-01-21 株式会社日立製作所 走査形投影電子線描画装置および方法
US5770863A (en) * 1995-10-24 1998-06-23 Nikon Corporation Charged particle beam projection apparatus
JPH09129543A (ja) * 1995-11-01 1997-05-16 Nikon Corp 荷電粒子線転写装置
US5929454A (en) 1996-06-12 1999-07-27 Canon Kabushiki Kaisha Position detection apparatus, electron beam exposure apparatus, and methods associated with them
JP3927620B2 (ja) 1996-06-12 2007-06-13 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
US5912469A (en) * 1996-07-11 1999-06-15 Nikon Corporation Charged-particle-beam microlithography apparatus
US6069363A (en) * 1998-02-26 2000-05-30 International Business Machines Corporation Magnetic-electrostatic symmetric doublet projection lens
JP2000003847A (ja) 1998-06-15 2000-01-07 Canon Inc 荷電粒子線縮小転写装置及びデバイス製造方法
JP2000173889A (ja) * 1998-12-02 2000-06-23 Canon Inc 電子線露光装置、電子レンズ、ならびにデバイス製造方法
JP2000232052A (ja) * 1999-02-09 2000-08-22 Nikon Corp 荷電粒子線転写露光装置
US6465783B1 (en) * 1999-06-24 2002-10-15 Nikon Corporation High-throughput specimen-inspection apparatus and methods utilizing multiple parallel charged particle beams and an array of multiple secondary-electron-detectors
JP2002343295A (ja) 2001-05-21 2002-11-29 Canon Inc 電子線露光装置、縮小投影系及びデバイス製造方法
TW579536B (en) 2001-07-02 2004-03-11 Zeiss Carl Semiconductor Mfg Examining system for the particle-optical imaging of an object, deflector for charged particles as well as method for the operation of the same
JP4468753B2 (ja) * 2004-06-30 2010-05-26 キヤノン株式会社 荷電粒子線露光装置及び該装置を用いたデバイス製造方法
JP2006221870A (ja) 2005-02-08 2006-08-24 Ebara Corp 電子線装置
US20090014649A1 (en) * 2005-03-22 2009-01-15 Ebara Corporation Electron beam apparatus
JP4679978B2 (ja) * 2005-06-28 2011-05-11 株式会社日立ハイテクノロジーズ 荷電粒子ビーム応用装置

Also Published As

Publication number Publication date
TW200931183A (en) 2009-07-16
JP2009064841A (ja) 2009-03-26
US20090057571A1 (en) 2009-03-05
KR100986651B1 (ko) 2010-10-11
TWI408508B (zh) 2013-09-11
US7960703B2 (en) 2011-06-14
KR20090024622A (ko) 2009-03-09

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