KR20090024622A - 하전입자선 묘화장치 및 디바이스 제조방법 - Google Patents
하전입자선 묘화장치 및 디바이스 제조방법 Download PDFInfo
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- KR20090024622A KR20090024622A KR1020080081816A KR20080081816A KR20090024622A KR 20090024622 A KR20090024622 A KR 20090024622A KR 1020080081816 A KR1020080081816 A KR 1020080081816A KR 20080081816 A KR20080081816 A KR 20080081816A KR 20090024622 A KR20090024622 A KR 20090024622A
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- lens
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- charged particle
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 238000002039 particle-beam lithography Methods 0.000 title abstract 2
- 230000005684 electric field Effects 0.000 claims abstract description 17
- 239000002245 particle Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 17
- 210000001747 pupil Anatomy 0.000 claims description 9
- 230000004075 alteration Effects 0.000 abstract description 17
- 230000003287 optical effect Effects 0.000 abstract description 10
- 230000006866 deterioration Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 14
- 238000010894 electron beam technology Methods 0.000 description 13
- 238000009826 distribution Methods 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/145—Combinations of electrostatic and magnetic lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
- H01J2237/04926—Lens systems combined
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1538—Space charge (Boersch) effect compensation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
Claims (6)
- 하전입자선을 투영하는 투영계를 구비하고, 상기 투영된 하전입자선으로 기판에 패턴을 묘화하는 하전입자선 묘화장치로서,상기 투영계는, 자장을 발생하도록 구성된 대칭형 자기 더블릿 렌즈와, 상기자장에 중첩된 전계를 발생하도록 구성된 정전 렌즈를 구비하고,상기 정전렌즈는, 적어도 상기 대칭형 자기 더블릿 렌즈의 동공면 위에, 상기 대칭형 자기 더블릿 렌즈에 입사한 하전입자선을 가속하는 전위를 인가하도록 구성된 전극을 포함한 것을 특징으로 하는 하전입자선 묘화장치.
- 제 1 항에 있어서,상기 정전렌즈는, 제 1 내지 제 3 원통 전극을 포함하는 유니포텐셜 정전 렌즈를 구비하고, 상기 제 1 원통 전극은, 물체면측에 배치되고, 상기 제 3 원통 전극은, 상면(image plane)측에 배치되며, 상기 제 2 원통 전극은, 상기 제 1 원통 전극과 제 3 원통 전극과의 사이에 배치되고,상기 기판의 전위와 실질적으로 동일한 전위는, 상기 제 1 원통 전극과 제 3 원통 전극에 인가되고, 상기 기판의 전위보다 높은 전위는 상기 제 2 원통 전극에 인가되는 것을 특징으로 하는 하전입자선 묘화장치.
- 제 2 항에 있어서,상기 제 2 원통 전극은, 상기 대칭형 자기 더블릿 렌즈의 상단의 자계 렌즈의 수직방향에 있어서의 중심과, 상기 대칭형 자기 더블릿 렌즈의 하단의 자계 렌즈의 수직방향에 있어서의 중심과의 사이에 배치되는 것을 특징으로 하는 하전입자선 묘화장치.
- 제 2 항에 있어서,상기 제 2 원통 전극은, 상기 제 2 원통 전극의 상단이 상기 상단의 자계 렌즈의 하단보다 높게 위치되고, 상기 제 2 원통 전극의 하단이 상기 하단의 자계 렌즈의 상단보다 낮게 위치되도록 구성된 것을 특징으로 하는 하전입자선 묘화장치.
- 제 2 항에 있어서,상기 제 2 원통 전극의 상단으로부터 상기 동공면까지의 거리와 상기 제 2 원통 전극의 하단으로부터 상기 동공면까지의 거리와의 비가, 상기 대칭형 자기 더블릿 렌즈의 배율과 실질적으로 같도록, 상기 제 2 원통 전극이 배치되는 것을 특징으로 하는 하전입자선 묘화장치.
- 청구항 1 내지 5 중 어느 한 항에 기재된 하전입자선 묘화장치를 사용해서 기판에 패턴을 묘화하는 공정과,상기 패턴이 묘화된 기판을 현상하는 공정과,상기 현상된 기판을 가공하여 디바이스를 제조하는 공정을 포함한 것을 특징으로 하는 디바이스 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007229454A JP5230148B2 (ja) | 2007-09-04 | 2007-09-04 | 荷電粒子線描画装置及びデバイス製造方法 |
JPJP-P-2007-00229454 | 2007-09-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090024622A true KR20090024622A (ko) | 2009-03-09 |
KR100986651B1 KR100986651B1 (ko) | 2010-10-11 |
Family
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Application Number | Title | Priority Date | Filing Date |
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KR1020080081816A KR100986651B1 (ko) | 2007-09-04 | 2008-08-21 | 하전입자선 묘화장치 및 디바이스 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7960703B2 (ko) |
JP (1) | JP5230148B2 (ko) |
KR (1) | KR100986651B1 (ko) |
TW (1) | TWI408508B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8927941B2 (en) | 2012-03-19 | 2015-01-06 | Nuflare Technology, Inc. | Multi charged particle beam writing apparatus and multi charged particle beam writing method with fixed voltage ratio einzel lens |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6013089B2 (ja) * | 2012-08-30 | 2016-10-25 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
TWI502616B (zh) | 2014-08-08 | 2015-10-01 | Nat Univ Tsing Hua | 桌上型電子顯微鏡以及其廣域可調式磁透鏡 |
US9799484B2 (en) * | 2014-12-09 | 2017-10-24 | Hermes Microvision, Inc. | Charged particle source |
JP6480534B1 (ja) * | 2017-09-26 | 2019-03-13 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム照射装置及び基板の帯電低減方法 |
JP2019212766A (ja) * | 2018-06-05 | 2019-12-12 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
EP4095882A1 (en) | 2021-05-25 | 2022-11-30 | IMS Nanofabrication GmbH | Pattern data processing for programmable direct-write apparatus |
US20230015805A1 (en) * | 2021-07-14 | 2023-01-19 | Ims Nanofabrication Gmbh | Electromagnetic Lens |
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JPS61190839A (ja) * | 1985-02-19 | 1986-08-25 | Canon Inc | 荷電粒子線装置 |
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US5146090A (en) * | 1990-06-11 | 1992-09-08 | Siemens Aktiengesellschaft | Particle beam apparatus having an immersion lens arranged in an intermediate image of the beam |
JP3247700B2 (ja) * | 1991-03-29 | 2002-01-21 | 株式会社日立製作所 | 走査形投影電子線描画装置および方法 |
US5770863A (en) * | 1995-10-24 | 1998-06-23 | Nikon Corporation | Charged particle beam projection apparatus |
JPH09129543A (ja) * | 1995-11-01 | 1997-05-16 | Nikon Corp | 荷電粒子線転写装置 |
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JP2000003847A (ja) * | 1998-06-15 | 2000-01-07 | Canon Inc | 荷電粒子線縮小転写装置及びデバイス製造方法 |
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-
2007
- 2007-09-04 JP JP2007229454A patent/JP5230148B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-01 US US12/184,586 patent/US7960703B2/en not_active Expired - Fee Related
- 2008-08-20 TW TW097131736A patent/TWI408508B/zh not_active IP Right Cessation
- 2008-08-21 KR KR1020080081816A patent/KR100986651B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8927941B2 (en) | 2012-03-19 | 2015-01-06 | Nuflare Technology, Inc. | Multi charged particle beam writing apparatus and multi charged particle beam writing method with fixed voltage ratio einzel lens |
KR101483543B1 (ko) * | 2012-03-19 | 2015-01-16 | 가부시키가이샤 뉴플레어 테크놀로지 | 멀티 하전 입자빔 묘화 장치 및 멀티 하전 입자빔 묘화 방법 |
Also Published As
Publication number | Publication date |
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JP5230148B2 (ja) | 2013-07-10 |
US20090057571A1 (en) | 2009-03-05 |
JP2009064841A (ja) | 2009-03-26 |
TW200931183A (en) | 2009-07-16 |
TWI408508B (zh) | 2013-09-11 |
US7960703B2 (en) | 2011-06-14 |
KR100986651B1 (ko) | 2010-10-11 |
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