JP2009026962A - 露光装置、情報処理装置及びデバイス製造方法 - Google Patents

露光装置、情報処理装置及びデバイス製造方法 Download PDF

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Publication number
JP2009026962A
JP2009026962A JP2007188664A JP2007188664A JP2009026962A JP 2009026962 A JP2009026962 A JP 2009026962A JP 2007188664 A JP2007188664 A JP 2007188664A JP 2007188664 A JP2007188664 A JP 2007188664A JP 2009026962 A JP2009026962 A JP 2009026962A
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JP
Japan
Prior art keywords
shot
substrate
layout
surface shape
exposure
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Pending
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JP2007188664A
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English (en)
Japanese (ja)
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JP2009026962A5 (https=
Inventor
Atsushi Kawashima
淳 川島
Yuji Kojima
裕治 児嶋
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2007188664A priority Critical patent/JP2009026962A/ja
Priority to US12/174,915 priority patent/US8212990B2/en
Publication of JP2009026962A publication Critical patent/JP2009026962A/ja
Publication of JP2009026962A5 publication Critical patent/JP2009026962A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007188664A 2007-07-19 2007-07-19 露光装置、情報処理装置及びデバイス製造方法 Pending JP2009026962A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007188664A JP2009026962A (ja) 2007-07-19 2007-07-19 露光装置、情報処理装置及びデバイス製造方法
US12/174,915 US8212990B2 (en) 2007-07-19 2008-07-17 Exposure apparatus, information processing apparatus, and method of manufacturing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007188664A JP2009026962A (ja) 2007-07-19 2007-07-19 露光装置、情報処理装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2009026962A true JP2009026962A (ja) 2009-02-05
JP2009026962A5 JP2009026962A5 (https=) 2010-09-02

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JP2007188664A Pending JP2009026962A (ja) 2007-07-19 2007-07-19 露光装置、情報処理装置及びデバイス製造方法

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US (1) US8212990B2 (https=)
JP (1) JP2009026962A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150135089A (ko) * 2014-05-22 2015-12-02 캐논 가부시끼가이샤 노광장치, 노광방법 및 디바이스 제조방법
JP2016046329A (ja) * 2014-08-20 2016-04-04 キヤノン株式会社 リソグラフィ装置、物品の製造方法、情報処理装置及び決定方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12529965B2 (en) * 2024-01-30 2026-01-20 Tokyo Electron Limited Method for selective exposure of wafer to corrective irradiation at a per-die level

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07283106A (ja) * 1994-04-07 1995-10-27 Rohm Co Ltd 露光装置及び露光方法
JP2002319530A (ja) * 2001-04-20 2002-10-31 Matsushita Electric Ind Co Ltd 露光装置、及び露光方法
JP2003188089A (ja) * 2001-12-21 2003-07-04 Canon Inc 露光条件算出方法、露光条件算出プログラム、記録媒体、レチクルの製造方法、構造体の製造方法、装置及び露光条件算出サービス提供方法
JP2004281434A (ja) * 2003-03-12 2004-10-07 Toshiba Corp ショットマップ作成方法、露光方法、プロセッサ、半導体装置の製造方法及びプログラム
JP2005236296A (ja) * 2004-02-18 2005-09-02 Asml Netherlands Bv フィードフォワード焦点制御を有するリソグラフィ装置およびデバイス製造方法
JP2006179889A (ja) * 2005-11-30 2006-07-06 Hitachi Ltd 回路パターンの検査方法及び検査装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07283106A (ja) * 1994-04-07 1995-10-27 Rohm Co Ltd 露光装置及び露光方法
JP2002319530A (ja) * 2001-04-20 2002-10-31 Matsushita Electric Ind Co Ltd 露光装置、及び露光方法
JP2003188089A (ja) * 2001-12-21 2003-07-04 Canon Inc 露光条件算出方法、露光条件算出プログラム、記録媒体、レチクルの製造方法、構造体の製造方法、装置及び露光条件算出サービス提供方法
JP2004281434A (ja) * 2003-03-12 2004-10-07 Toshiba Corp ショットマップ作成方法、露光方法、プロセッサ、半導体装置の製造方法及びプログラム
JP2005236296A (ja) * 2004-02-18 2005-09-02 Asml Netherlands Bv フィードフォワード焦点制御を有するリソグラフィ装置およびデバイス製造方法
JP2006179889A (ja) * 2005-11-30 2006-07-06 Hitachi Ltd 回路パターンの検査方法及び検査装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150135089A (ko) * 2014-05-22 2015-12-02 캐논 가부시끼가이샤 노광장치, 노광방법 및 디바이스 제조방법
JP2015222773A (ja) * 2014-05-22 2015-12-10 キヤノン株式会社 露光装置、露光方法及びデバイスの製造方法
KR101879263B1 (ko) * 2014-05-22 2018-07-17 캐논 가부시끼가이샤 노광장치, 노광방법 및 디바이스 제조방법
JP2016046329A (ja) * 2014-08-20 2016-04-04 キヤノン株式会社 リソグラフィ装置、物品の製造方法、情報処理装置及び決定方法

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Publication number Publication date
US20090040480A1 (en) 2009-02-12
US8212990B2 (en) 2012-07-03

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