JP2009026934A - 成膜装置及びそのコーティング方法 - Google Patents
成膜装置及びそのコーティング方法 Download PDFInfo
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- 238000000576 coating method Methods 0.000 title claims abstract description 33
- 238000006243 chemical reaction Methods 0.000 claims abstract description 131
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000007789 gas Substances 0.000 claims description 263
- 239000012495 reaction gas Substances 0.000 claims description 64
- 239000004065 semiconductor Substances 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- 230000007246 mechanism Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 77
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 77
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 abstract description 7
- 230000004913 activation Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 251
- 238000000034 method Methods 0.000 description 69
- 235000012431 wafers Nutrition 0.000 description 67
- 238000000231 atomic layer deposition Methods 0.000 description 43
- 239000011734 sodium Substances 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000011109 contamination Methods 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 12
- 239000010453 quartz Substances 0.000 description 12
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 125000006850 spacer group Chemical group 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 238000001994 activation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000678 plasma activation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】ウェハ18を収容する反応室10と、反応室10内に設けられたバッファ室24と、プラズマによる活性化を必要とするNH3ガスと、DCSガスとをバッファ室24内に供給するシャワーノズル26と、バッファ室24内においてNH3ガスを活性化するためのプラズマを生成する一対の高周波電極38とを有する成膜装置において、ウェハ18上にシリコン窒化膜を形成する前に、NH3ガスとDCSガスとをバッファ室24内に供給することにより、バッファ室24内部の表面をコーティングする。
【選択図】 図2
Description
本発明の第1実施形態による成膜装置及び成膜方法について図1乃至図5を用いて説明する。図1は、本実施形態による成膜装置の構造を示す縦断面図である。図2は、本実施形態による成膜装置の構造を示す横断面図である。図3は、本実施形態による成膜装置における反応室内部の表面に対するコーティングを説明する図である。図4は、バッファ室24内にDCSガスが供給されない構成の成膜装置における反応室内部の表面に対するコーティングを説明する図である。図5は、本実施形態による成膜装置により成膜された膜の評価結果を示すグラフである。
本実施形態の変形例による成膜装置について図6を用いて説明する。図6は、本変形例による成膜装置の構造を示す横断面図である。
本発明の第2実施形態による成膜装置及び成膜方法について図7を用いて説明する。図7は、本実施形態による成膜装置の構造を示す横断面図である。なお、第1実施形態による成膜装置及び成膜方法と同一の構成要素には、同一の符号を付して説明を省略または簡潔にする。
本発明の第3実施形態による半導体装置の製造方法について図8及び図9を用いて説明する。図8及び図9は、本実施形態による半導体装置の製造方法を示す工程断面図である。
本発明は上記実施形態に限らず種々の変形が可能である。
前記基板を収容する反応容器と、
前記反応容器内に設けられたバッファ室と、
第1の反応ガスと、前記第1の反応ガスと異なる第2の反応ガスとを前記バッファ室内に供給する第1のガス供給部と、
前記バッファ室内にプラズマを生成するプラズマ生成部と
を有することを特徴とする成膜装置。
前記第1のガス供給部は、前記第1の反応ガスと前記第2の反応ガスとを択一的に供給する切り替え機構を有する
ことを特徴とする成膜装置。
前記第1のガス供給部は、前記第1の反応ガスを供給する第1のノズルと、前記第2の反応ガスを供給する第2のノズルとを有する
ことを特徴とする成膜装置。
前記バッファ室の外部にあって、前記反応室内に第3の反応ガスを供給する第2のガス供給部を更に有する
ことを特徴とする成膜装置。
前記第2の反応ガスは、シラン系ガスである
ことを特徴とする成膜装置。
前記第1の反応ガスと前記第3の反応ガスとを用いて原子層堆積法により前記基板上に前記膜を形成する原子層堆積装置である
ことを特徴とする成膜装置。
前記第1の反応ガスは、アンモニアガスであり、
前記第3の反応ガスは、ジクロロシランガスであり、
前記膜は、シリコン窒化膜である
ことを特徴とする成膜装置。
前記第1の反応ガスは、アンモニアガスであり、
前記第2の反応ガスは、ジクロロシランガスである
ことを特徴とする成膜装置。
前記第1の反応ガスとは異なる第2の反応ガスを前記バッファ室内に供給することにより、前記バッファ室の前記内壁面に前記第1の膜を堆積させる
ことを特徴とするコーティング方法。
前記バッファ室の前記内壁面に前記第1の膜を堆積させる工程において、前記第1の反応ガスと前記第2の反応ガスとを前記バッファ室内に供給することにより、前記バッファ室の前記内壁面に前記第1の膜を堆積させる
ことを特徴とするコーティング方法。
前記第1の反応ガスと前記第2の反応ガスとを用いて原子層堆積法により前記バッファ室の前記内壁面に前記第1の膜を堆積させる
ことを特徴とするコーティング方法。
前記第1の反応ガスは、アンモニアガスであり、
前記第2の反応ガスは、ジクロロシランガスであり、
前記第1の膜は、シリコン窒化膜である
ことを特徴とするコーティング方法。
前記第2の反応ガスは、シラン系ガスであり、
前記バッファ室の前記内壁面をコーティングする際には、前記第2の反応ガスを前記バッファ室内に供給することにより、前記バッファ室の前記内壁面をシリコン系の膜でコーティングする
ことを特徴とするコーティング方法。
前記反応室内に前記第1の反応ガスを供給して前記半導体基板上に第2の膜を形成する工程と
を有することを特徴とする半導体装置の製造方法。
前記半導体基板上に前記第2の膜を形成する工程は、前記反応容器内に第3の反応ガスを供給する工程を更に有する
ことを特徴とする半導体装置の製造方法。
前記半導体基板上に前記第2の膜を形成する工程では、ゲート電極が形成された前記半導体基板上に前記第2の膜を形成し、
前記半導体基板上に前記第2の膜を形成する工程の後に、前記第2の膜を異方性エッチングすることにより、前記ゲート電極の側壁部分に、前記第2の膜を含むサイドウォールスペーサを形成する工程を更に有する
ことを特徴とする半導体装置の製造方法。
12…反応管
14…シールキャップ
16…ヒーター
18…ウェハ
20…ボート
22…排気口
24…バッファ室
24a…ガス噴出孔
26、42、48、54…シャワーノズル
28、30、32、44、50、56…ガス供給管
34、36、46、52、58…バルブ
38…高周波電極
40…電極保護管
47…シリコン窒化膜
60…半導体基板
62…素子分離領域
64…ゲート絶縁膜
66…ゲート電極
68…不純物拡散領域
70…シリコン酸化膜
72…シリコン窒化膜
74…サイドウォールスペーサ
76…不純物拡散領域
78…ソース/ドレイン領域
100…反応管
102…ウェハ
104…バッファ室
104a…ガス供給孔
106…ノズル
108…電極
110…電極保護管
112…ガス供給部
112a…ガス供給孔
Claims (10)
- 基板上に膜を形成する成膜装置であって、
前記基板を収容する反応容器と、
前記反応容器内に設けられたバッファ室と、
第1の反応ガスと、前記第1の反応ガスと異なる第2の反応ガスとを前記バッファ室内に供給する第1のガス供給部と、
前記バッファ室内にプラズマを生成するプラズマ生成部と
を有することを特徴とする成膜装置。 - 請求項1記載の成膜装置において、
前記第1のガス供給部は、前記第1の反応ガスと前記第2の反応ガスとを択一的に供給する切り替え機構を有する
ことを特徴とする成膜装置。 - 請求項1記載の成膜装置において、
前記第1のガス供給部は、前記第1の反応ガスを供給する第1のノズルと、前記第2の反応ガスを供給する第2のノズルとを有する
ことを特徴とする成膜装置。 - 請求項1乃至3のいずれか1項に記載の成膜装置において、
前記バッファ室の外部にあって、前記反応室内に第3の反応ガスを供給する第2のガス供給部を更に有する
ことを特徴とする成膜装置。 - 請求項1乃至3のいずれか1項に記載の成膜装置において、
前記第2の反応ガスは、シラン系ガスである
ことを特徴とする成膜装置。 - 基板を収容する反応容器と、前記反応容器内に設けられたバッファ室と、第1の反応ガスを前記バッファ室内に供給するガス供給部と、前記バッファ室内にプラズマを生成するプラズマ生成部とを有する成膜装置の前記バッファ室の内壁面に第1の膜を堆積させるコーティング方法であって、
前記第1の反応ガスとは異なる第2の反応ガスを前記バッファ室内に供給することにより、前記バッファ室の前記内壁面に前記第1の膜を堆積させる
ことを特徴とするコーティング方法。 - 請求項6記載のコーティング方法において、
前記バッファ室の前記内壁面に前記第1の膜を堆積させる工程において、前記第1の反応ガスと前記第2の反応ガスとを前記バッファ室内に供給することにより、前記バッファ室の前記内壁面に前記第1の膜を堆積させる
ことを特徴とするコーティング方法。 - 請求項6記載のコーティング方法において、
前記第2の反応ガスは、シラン系ガスであり、
前記バッファ室の前記内壁面をコーティングする際には、前記第2の反応ガスを前記バッファ室内に供給することにより、前記バッファ室の前記内壁面をシリコン系の膜でコーティングする
ことを特徴とするコーティング方法。 - 半導体基板を収容する反応容器と、前記反応容器内に設けられたバッファ室と、第1の反応ガスを前記バッファ室内に供給する第1のガス供給部と、前記バッファ室内にプラズマを生成するプラズマ生成部とを有する成膜装置の前記バッファ室に、前記第1の反応ガスとは異なる第2の反応ガスを供給して、前記バッファ室の内壁面に第1の膜を堆積させる工程と、
前記反応室内に前記第1の反応ガスを供給して前記半導体基板上に第2の膜を形成する工程と
を有することを特徴とする半導体装置の製造方法。 - 請求項9記載の半導体装置の製造方法において、
前記半導体基板上に前記第2の膜を形成する工程は、前記反応容器内に第3の反応ガスを供給する工程を更に有する
ことを特徴とする半導体装置の製造方法。
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US12/175,002 US8232217B2 (en) | 2007-07-19 | 2008-07-17 | Film deposition apparatus, method of manufacturing a semiconductor device, and method of coating the film deposition apparatus |
US13/536,406 US20120279451A1 (en) | 2007-07-19 | 2012-06-28 | Film deposition apparatus, method of manufacturing a semiconductor device, and method of coating the film deposition apparatus |
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JP2009076586A (ja) * | 2007-09-19 | 2009-04-09 | Hitachi Kokusai Electric Inc | 基板処理装置及びそのコーティング方法 |
JP2009094340A (ja) * | 2007-10-10 | 2009-04-30 | Tokyo Electron Ltd | 基板処理装置のメタル汚染低減方法 |
JP2011135046A (ja) * | 2009-11-27 | 2011-07-07 | Tokyo Electron Ltd | 縦型成膜装置およびその使用方法 |
WO2012063779A1 (ja) * | 2010-11-08 | 2012-05-18 | キヤノンアネルバ株式会社 | プラズマ誘起cvd方法 |
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KR100829327B1 (ko) * | 2002-04-05 | 2008-05-13 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반응 용기 |
US20120122319A1 (en) * | 2007-09-19 | 2012-05-17 | Hironobu Shimizu | Coating method for coating reaction tube prior to film forming process |
JP2010239115A (ja) * | 2009-03-10 | 2010-10-21 | Hitachi Kokusai Electric Inc | 基板処理装置 |
CN102456568A (zh) * | 2011-09-29 | 2012-05-16 | 上海华力微电子有限公司 | 一种淀积掺氮碳化硅薄膜的方法 |
KR20140052763A (ko) * | 2012-10-25 | 2014-05-07 | 삼성전자주식회사 | 게이트 구조체를 갖는 반도체 소자 및 그 제조 방법들 |
WO2014189671A1 (en) * | 2013-05-24 | 2014-11-27 | Applied Materials, Inc. | Cobalt selectivity improvement in selective cobalt process sequence |
JP6415215B2 (ja) * | 2014-09-26 | 2018-10-31 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
JP6462161B2 (ja) * | 2016-02-09 | 2019-01-30 | 株式会社Kokusai Electric | 基板処理装置および半導体装置の製造方法 |
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US20120122319A1 (en) * | 2007-09-19 | 2012-05-17 | Hironobu Shimizu | Coating method for coating reaction tube prior to film forming process |
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- 2008-07-17 US US12/175,002 patent/US8232217B2/en not_active Expired - Fee Related
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JP2009076586A (ja) * | 2007-09-19 | 2009-04-09 | Hitachi Kokusai Electric Inc | 基板処理装置及びそのコーティング方法 |
JP2009094340A (ja) * | 2007-10-10 | 2009-04-30 | Tokyo Electron Ltd | 基板処理装置のメタル汚染低減方法 |
JP2011135046A (ja) * | 2009-11-27 | 2011-07-07 | Tokyo Electron Ltd | 縦型成膜装置およびその使用方法 |
US8563096B2 (en) | 2009-11-27 | 2013-10-22 | Tokyo Electron Limited | Vertical film formation apparatus and method for using same |
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WO2012063779A1 (ja) * | 2010-11-08 | 2012-05-18 | キヤノンアネルバ株式会社 | プラズマ誘起cvd方法 |
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JP4978355B2 (ja) | 2012-07-18 |
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