JP2009006479A - Ｍｅｍｓ素子およびその製造方法 - Google Patents
Ｍｅｍｓ素子およびその製造方法 Download PDFInfo
- Publication number
- JP2009006479A JP2009006479A JP2008253521A JP2008253521A JP2009006479A JP 2009006479 A JP2009006479 A JP 2009006479A JP 2008253521 A JP2008253521 A JP 2008253521A JP 2008253521 A JP2008253521 A JP 2008253521A JP 2009006479 A JP2009006479 A JP 2009006479A
- Authority
- JP
- Japan
- Prior art keywords
- floating gate
- mems
- movable
- mems element
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 28
- 230000008859 change Effects 0.000 abstract description 5
- 230000008569 process Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008253521A JP2009006479A (ja) | 2008-09-30 | 2008-09-30 | Ｍｅｍｓ素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008253521A JP2009006479A (ja) | 2008-09-30 | 2008-09-30 | Ｍｅｍｓ素子およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007035826A Division JP5167652B2 (ja) | 2007-02-16 | 2007-02-16 | Ｍｅｍｓ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009006479A true JP2009006479A (ja) | 2009-01-15 |
| JP2009006479A5 JP2009006479A5 (https=) | 2010-04-02 |
Family
ID=40322093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008253521A Withdrawn JP2009006479A (ja) | 2008-09-30 | 2008-09-30 | Ｍｅｍｓ素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009006479A (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10115527A (ja) * | 1997-11-14 | 1998-05-06 | Murata Mfg Co Ltd | 共振子 |
| JP2004243462A (ja) * | 2003-02-13 | 2004-09-02 | Sony Corp | Ｍｅｍｓ素子 |
| JP2006238265A (ja) * | 2005-02-28 | 2006-09-07 | Seiko Epson Corp | 振動子構造体及びその製造方法 |
| JP2006252956A (ja) * | 2005-03-10 | 2006-09-21 | Toshiba Corp | マイクロマシンスイッチ及び電子機器 |
| JP2006318670A (ja) * | 2005-05-10 | 2006-11-24 | Toshiba Corp | スイッチング素子 |
-
2008
- 2008-09-30 JP JP2008253521A patent/JP2009006479A/ja not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10115527A (ja) * | 1997-11-14 | 1998-05-06 | Murata Mfg Co Ltd | 共振子 |
| JP2004243462A (ja) * | 2003-02-13 | 2004-09-02 | Sony Corp | Ｍｅｍｓ素子 |
| JP2006238265A (ja) * | 2005-02-28 | 2006-09-07 | Seiko Epson Corp | 振動子構造体及びその製造方法 |
| JP2006252956A (ja) * | 2005-03-10 | 2006-09-21 | Toshiba Corp | マイクロマシンスイッチ及び電子機器 |
| JP2006318670A (ja) * | 2005-05-10 | 2006-11-24 | Toshiba Corp | スイッチング素子 |
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