JP2009006479A5 - - Google Patents
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- Publication number
- JP2009006479A5 JP2009006479A5 JP2008253521A JP2008253521A JP2009006479A5 JP 2009006479 A5 JP2009006479 A5 JP 2009006479A5 JP 2008253521 A JP2008253521 A JP 2008253521A JP 2008253521 A JP2008253521 A JP 2008253521A JP 2009006479 A5 JP2009006479 A5 JP 2009006479A5
- Authority
- JP
- Japan
- Prior art keywords
- mems
- movable electrode
- forming
- floating gate
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 238000009792 diffusion process Methods 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 230000000873 masking effect Effects 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008253521A JP2009006479A (ja) | 2008-09-30 | 2008-09-30 | Ｍｅｍｓ素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008253521A JP2009006479A (ja) | 2008-09-30 | 2008-09-30 | Ｍｅｍｓ素子およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007035826A Division JP5167652B2 (ja) | 2007-02-16 | 2007-02-16 | Ｍｅｍｓ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009006479A JP2009006479A (ja) | 2009-01-15 |
| JP2009006479A5 true JP2009006479A5 (https=) | 2010-04-02 |
Family
ID=40322093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008253521A Withdrawn JP2009006479A (ja) | 2008-09-30 | 2008-09-30 | Ｍｅｍｓ素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009006479A (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3351325B2 (ja) * | 1997-11-14 | 2002-11-25 | 株式会社村田製作所 | 共振子 |
| JP2004243462A (ja) * | 2003-02-13 | 2004-09-02 | Sony Corp | Ｍｅｍｓ素子 |
| JP4645227B2 (ja) * | 2005-02-28 | 2011-03-09 | セイコーエプソン株式会社 | 振動子構造体及びその製造方法 |
| JP2006252956A (ja) * | 2005-03-10 | 2006-09-21 | Toshiba Corp | マイクロマシンスイッチ及び電子機器 |
| JP4405427B2 (ja) * | 2005-05-10 | 2010-01-27 | 株式会社東芝 | スイッチング素子 |
-
2008
- 2008-09-30 JP JP2008253521A patent/JP2009006479A/ja not_active Withdrawn
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