JP2009004756A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP2009004756A JP2009004756A JP2008127915A JP2008127915A JP2009004756A JP 2009004756 A JP2009004756 A JP 2009004756A JP 2008127915 A JP2008127915 A JP 2008127915A JP 2008127915 A JP2008127915 A JP 2008127915A JP 2009004756 A JP2009004756 A JP 2009004756A
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- Prior art keywords
- crystal semiconductor
- semiconductor layer
- single crystal
- substrate
- film
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- 238000000034 method Methods 0.000 title claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
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- 239000000758 substrate Substances 0.000 claims abstract description 179
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- 229910052581 Si3N4 Inorganic materials 0.000 description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 32
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- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000010703 silicon Substances 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
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- 239000001257 hydrogen Substances 0.000 description 16
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008127915A JP2009004756A (ja) | 2007-05-18 | 2008-05-15 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007132540 | 2007-05-18 | ||
| JP2008127915A JP2009004756A (ja) | 2007-05-18 | 2008-05-15 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014094751A Division JP2014170959A (ja) | 2007-05-18 | 2014-05-01 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009004756A true JP2009004756A (ja) | 2009-01-08 |
| JP2009004756A5 JP2009004756A5 (zh) | 2011-05-06 |
Family
ID=40027928
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008127915A Withdrawn JP2009004756A (ja) | 2007-05-18 | 2008-05-15 | 半導体装置の作製方法 |
| JP2014094751A Withdrawn JP2014170959A (ja) | 2007-05-18 | 2014-05-01 | 半導体装置の作製方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014094751A Withdrawn JP2014170959A (ja) | 2007-05-18 | 2014-05-01 | 半導体装置の作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7960262B2 (zh) |
| JP (2) | JP2009004756A (zh) |
| CN (1) | CN101308772B (zh) |
| TW (1) | TWI476927B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020516085A (ja) * | 2017-03-31 | 2020-05-28 | アールエヌアール ラボラトリー インコーポレイテッド | レーザを用いた間接加熱方法 |
| US10836633B2 (en) | 2015-12-28 | 2020-11-17 | Hitachi Zosen Corporation | Carbon nanotube composite material and method for producing carbon nanotube composite material |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8236668B2 (en) * | 2007-10-10 | 2012-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| JP5654206B2 (ja) | 2008-03-26 | 2015-01-14 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置 |
| JP2009260315A (ja) * | 2008-03-26 | 2009-11-05 | Semiconductor Energy Lab Co Ltd | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
| JP5552276B2 (ja) * | 2008-08-01 | 2014-07-16 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| SG161151A1 (en) * | 2008-10-22 | 2010-05-27 | Semiconductor Energy Lab | Soi substrate and method for manufacturing the same |
| SG162675A1 (en) * | 2008-12-15 | 2010-07-29 | Semiconductor Energy Lab | Manufacturing method of soi substrate and manufacturing method of semiconductor device |
| WO2013054823A1 (en) * | 2011-10-14 | 2013-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6743752B2 (ja) | 2017-04-20 | 2020-08-19 | 三菱電機株式会社 | 半導体装置の製造方法 |
| CN107833924B (zh) * | 2017-10-26 | 2020-06-19 | 京东方科技集团股份有限公司 | 顶栅型薄膜晶体管及其制备方法、阵列基板、显示面板 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000216265A (ja) * | 1999-01-22 | 2000-08-04 | Mega Chips Corp | 半導体装置及びその製造方法 |
| JP2001318652A (ja) * | 2000-05-08 | 2001-11-16 | Matsushita Electric Ind Co Ltd | アクティブマトリクス液晶表示素子 |
| JP2003282885A (ja) * | 2002-03-26 | 2003-10-03 | Sharp Corp | 半導体装置およびその製造方法 |
| JP2006121060A (ja) * | 2004-09-24 | 2006-05-11 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法、並びに電子機器 |
| WO2006117900A1 (ja) * | 2005-04-26 | 2006-11-09 | Sharp Kabushiki Kaisha | 半導体装置の製造方法及び半導体装置 |
| JP2007036216A (ja) * | 2005-06-24 | 2007-02-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び無線通信システム |
| JP2007079431A (ja) * | 2005-09-16 | 2007-03-29 | Toshiba Matsushita Display Technology Co Ltd | 表示素子用アレイ基板及びその作製方法、これを用いた表示素子 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5528397A (en) * | 1991-12-03 | 1996-06-18 | Kopin Corporation | Single crystal silicon transistors for display panels |
| US5923962A (en) | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
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| TW264575B (zh) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
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- 2008-03-31 CN CN200810088431.2A patent/CN101308772B/zh not_active Expired - Fee Related
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| US10836633B2 (en) | 2015-12-28 | 2020-11-17 | Hitachi Zosen Corporation | Carbon nanotube composite material and method for producing carbon nanotube composite material |
| US11414321B2 (en) | 2015-12-28 | 2022-08-16 | Hitachi Zosen Corporation | Carbon nanotube composite material and method for producing carbon nanotube composite material |
| JP2020516085A (ja) * | 2017-03-31 | 2020-05-28 | アールエヌアール ラボラトリー インコーポレイテッド | レーザを用いた間接加熱方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI476927B (zh) | 2015-03-11 |
| US7960262B2 (en) | 2011-06-14 |
| CN101308772B (zh) | 2013-01-02 |
| JP2014170959A (ja) | 2014-09-18 |
| TW200903811A (en) | 2009-01-16 |
| CN101308772A (zh) | 2008-11-19 |
| US20080286911A1 (en) | 2008-11-20 |
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