JP2008545277A5 - - Google Patents
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- JP2008545277A5 JP2008545277A5 JP2008519486A JP2008519486A JP2008545277A5 JP 2008545277 A5 JP2008545277 A5 JP 2008545277A5 JP 2008519486 A JP2008519486 A JP 2008519486A JP 2008519486 A JP2008519486 A JP 2008519486A JP 2008545277 A5 JP2008545277 A5 JP 2008545277A5
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- JP
- Japan
- Prior art keywords
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- metal
- structural formula
- substrate
- compounds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 59
- 239000002184 metal Substances 0.000 claims description 59
- 150000001875 compounds Chemical class 0.000 claims description 56
- 239000007789 gas Substances 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000003446 ligand Substances 0.000 claims description 18
- 238000000231 atomic layer deposition Methods 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 150000002739 metals Chemical class 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 125000000962 organic group Chemical group 0.000 claims description 8
- 229910052788 barium Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 125000000129 anionic group Chemical group 0.000 claims description 6
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 6
- 150000002602 lanthanoids Chemical class 0.000 claims description 6
- 229910052745 lead Inorganic materials 0.000 claims description 6
- 230000007935 neutral effect Effects 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical group O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 4
- 229910000077 silane Inorganic materials 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 150000001412 amines Chemical class 0.000 claims 3
- 229910021529 ammonia Inorganic materials 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052799 carbon Inorganic materials 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 238000010926 purge Methods 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims 2
- 229910002367 SrTiO Inorganic materials 0.000 claims 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims 2
- TXKMVPPZCYKFAC-UHFFFAOYSA-N disulfur monoxide Inorganic materials O=S=S TXKMVPPZCYKFAC-UHFFFAOYSA-N 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 claims 2
- 229910000058 selane Inorganic materials 0.000 claims 2
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 claims 2
- VTLHPSMQDDEFRU-UHFFFAOYSA-N tellane Chemical compound [TeH2] VTLHPSMQDDEFRU-UHFFFAOYSA-N 0.000 claims 2
- 229910000059 tellane Inorganic materials 0.000 claims 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims 1
- 150000004703 alkoxides Chemical group 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 125000003368 amide group Chemical group 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical group 0.000 claims 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- -1 pentadienyl groups Chemical group 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/168,160 US7416994B2 (en) | 2005-06-28 | 2005-06-28 | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
| US11/168,160 | 2005-06-28 | ||
| PCT/US2006/024995 WO2007002672A2 (en) | 2005-06-28 | 2006-06-27 | Atomic layer deposition using alkaline earth metal beta-diketiminate precursors |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008545277A JP2008545277A (ja) | 2008-12-11 |
| JP2008545277A5 true JP2008545277A5 (enExample) | 2009-07-30 |
| JP5003978B2 JP5003978B2 (ja) | 2012-08-22 |
Family
ID=37338887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008519486A Expired - Lifetime JP5003978B2 (ja) | 2005-06-28 | 2006-06-27 | アルカリ土類金属β‐ジケチミナート前駆体を用いた原子層堆積 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US7416994B2 (enExample) |
| EP (2) | EP2290126B1 (enExample) |
| JP (1) | JP5003978B2 (enExample) |
| KR (1) | KR101274330B1 (enExample) |
| CN (1) | CN101208456A (enExample) |
| AT (1) | ATE509134T1 (enExample) |
| TW (1) | TWI398543B (enExample) |
| WO (1) | WO2007002672A2 (enExample) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7544398B1 (en) * | 2005-04-26 | 2009-06-09 | The Regents Of The Univesity Of California | Controlled nano-doping of ultra thin films |
| US7572731B2 (en) * | 2005-06-28 | 2009-08-11 | Micron Technology, Inc. | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same |
| US7439338B2 (en) * | 2005-06-28 | 2008-10-21 | Micron Technology, Inc. | Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same |
| US7416994B2 (en) * | 2005-06-28 | 2008-08-26 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
| DE102005033579A1 (de) * | 2005-07-19 | 2007-01-25 | H.C. Starck Gmbh | Verfahren zur Herstellung dünner Hafnium- oder Zirkonnitrid-Schichten |
| JP4708905B2 (ja) * | 2005-08-05 | 2011-06-22 | イビデン株式会社 | 薄膜エンベディッドキャパシタンス、その製造方法、及びプリント配線板 |
| US8524931B2 (en) * | 2007-01-17 | 2013-09-03 | Advanced Technology Materials, Inc. | Precursor compositions for ALD/CVD of group II ruthenate thin films |
| US7892964B2 (en) | 2007-02-14 | 2011-02-22 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
| JP5248025B2 (ja) * | 2007-03-01 | 2013-07-31 | 東京エレクトロン株式会社 | ＳｒＴｉＯ３膜の成膜方法およびコンピュータ読取可能な記憶媒体 |
| WO2009012341A2 (en) * | 2007-07-16 | 2009-01-22 | Advancaed Technology Materials, Inc. | Group iv complexes as cvd and ald precursors for forming metal-containing thin films |
| US7928019B2 (en) * | 2007-08-10 | 2011-04-19 | Micron Technology, Inc. | Semiconductor processing |
| KR101200577B1 (ko) * | 2007-09-04 | 2012-11-12 | 엘피다 메모리 가부시키가이샤 | Ｓｒ-Ｔｉ-Ｏ계 막의 성막 방법 및 기억 매체 |
| WO2009086263A1 (en) * | 2007-12-28 | 2009-07-09 | Sigma-Aldrich Co. | Methods for preparing thin films using substituted pyrrolyl-metal precursors |
| US20100003532A1 (en) * | 2008-06-06 | 2010-01-07 | Feist Benjamin J | Beta-diketiminate precursors for metal containing film deposition |
| US8471049B2 (en) * | 2008-12-10 | 2013-06-25 | Air Product And Chemicals, Inc. | Precursors for depositing group 4 metal-containing films |
| CA2653581A1 (en) | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
| US8663735B2 (en) * | 2009-02-13 | 2014-03-04 | Advanced Technology Materials, Inc. | In situ generation of RuO4 for ALD of Ru and Ru related materials |
| US8003521B2 (en) * | 2009-04-07 | 2011-08-23 | Micron Technology, Inc. | Semiconductor processing |
| US7939442B2 (en) * | 2009-04-10 | 2011-05-10 | Micron Technology, Inc. | Strontium ruthenium oxide interface |
| US8697486B2 (en) | 2009-04-15 | 2014-04-15 | Micro Technology, Inc. | Methods of forming phase change materials and methods of forming phase change memory circuitry |
| JP2012124322A (ja) * | 2010-12-08 | 2012-06-28 | Elpida Memory Inc | 半導体記憶装置の製造方法 |
| KR101721294B1 (ko) * | 2011-04-06 | 2017-03-29 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 증착을 위한 하프늄-함유 또는 지르코늄-함유 전구체 |
| TWI586828B (zh) * | 2012-02-10 | 2017-06-11 | 財團法人國家同步輻射研究中心 | 原子層沈積之摻雜方法 |
| KR102168174B1 (ko) | 2014-03-19 | 2020-10-20 | 삼성전자주식회사 | 니켈 화합물 및 이를 이용한 박막 형성 방법 |
| KR102282139B1 (ko) * | 2015-05-12 | 2021-07-28 | 삼성전자주식회사 | 반도체 장치 |
| CN113652672B (zh) | 2015-05-27 | 2023-12-22 | Asm Ip 控股有限公司 | 用于含钼或钨薄膜的ald的前体的合成和用途 |
| US10662527B2 (en) | 2016-06-01 | 2020-05-26 | Asm Ip Holding B.V. | Manifolds for uniform vapor deposition |
| US10358407B2 (en) | 2016-10-12 | 2019-07-23 | Asm Ip Holding B.V. | Synthesis and use of precursors for vapor deposition of tungsten containing thin films |
| CN109402608B (zh) * | 2017-08-16 | 2020-12-08 | 北京北方华创微电子装备有限公司 | 一种原子层沉积设备的气路系统及其控制方法 |
| US11492701B2 (en) | 2019-03-19 | 2022-11-08 | Asm Ip Holding B.V. | Reactor manifolds |
| US12516414B2 (en) | 2019-03-19 | 2026-01-06 | Asm Ip Holding B.V. | Reactor manifolds |
| US12249189B2 (en) | 2019-08-12 | 2025-03-11 | Micron Technology, Inc. | Predictive maintenance of automotive lighting |
| US11155209B2 (en) * | 2019-08-22 | 2021-10-26 | Micron Technology, Inc. | Virtual mirror with automatic zoom based on vehicle sensors |
| US12210401B2 (en) | 2019-09-05 | 2025-01-28 | Micron Technology, Inc. | Temperature based optimization of data storage operations |
| KR20210048408A (ko) | 2019-10-22 | 2021-05-03 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 증착 반응기 매니폴드 |
| WO2021085210A1 (ja) | 2019-11-01 | 2021-05-06 | 株式会社Adeka | 新規化合物、該化合物を含有する薄膜形成用原料及び薄膜の製造方法 |
| US11250648B2 (en) | 2019-12-18 | 2022-02-15 | Micron Technology, Inc. | Predictive maintenance of automotive transmission |
| TWI865725B (zh) | 2020-02-10 | 2024-12-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 高深寬比孔內的氧化鉿之沉積 |
| KR102879479B1 (ko) * | 2020-06-15 | 2025-10-30 | 에스케이트리켐 주식회사 | 란탄족 전구체 및 이를 이용한 란탄족 함유 박막 및 상기 박막의 형성 방법 및 상기 란탄족 함유 박막을 포함하는 반도체 소자. |
| TWI918669B (zh) | 2020-06-24 | 2026-03-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 含鉬薄膜的氣相沉積 |
| KR102898793B1 (ko) * | 2020-06-24 | 2025-12-18 | 솔브레인 주식회사 | 박막 형성용 프리커서, 이의 제조방법 및 이를 포함하는 박막 제조 방법 |
| KR20230009793A (ko) | 2021-07-09 | 2023-01-17 | 삼성전자주식회사 | 이트륨 화합물과 이를 이용한 집적회로 소자의 제조 방법 |
| KR20230106992A (ko) | 2022-01-07 | 2023-07-14 | 삼성전자주식회사 | 박막 제조용 조성물 및 이를 이용한 반도체 장치 제조 방법 |
| CN117904593B (zh) * | 2024-03-15 | 2024-05-17 | 上海谱俊科技有限公司 | 金属工件、金属表面复合涂层及其制备方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4202889C2 (de) | 1992-02-01 | 1994-12-15 | Solvay Deutschland | Verfahren zur Abscheidung von ein Metall der ersten Übergangsmetallreihe oder Aluminium enthaltenden Schichten und 1,3-Diketiminato-Metall-Verbindungen |
| US5256244A (en) * | 1992-02-10 | 1993-10-26 | General Electric Company | Production of diffuse reflective coatings by atomic layer epitaxy |
| US5972430A (en) | 1997-11-26 | 1999-10-26 | Advanced Technology Materials, Inc. | Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer |
| US6225237B1 (en) * | 1998-09-01 | 2001-05-01 | Micron Technology, Inc. | Method for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands |
| KR100418581B1 (ko) | 2001-06-12 | 2004-02-11 | 주식회사 하이닉스반도체 | 메모리 소자의 제조방법 |
| KR100418569B1 (ko) | 2001-12-10 | 2004-02-14 | 주식회사 하이닉스반도체 | 단원자층증착을 이용한 고유전체 박막 형성방법 |
| JP2003209317A (ja) * | 2002-01-11 | 2003-07-25 | Oki Electric Ind Co Ltd | 半導体レーザモジュール |
| US6939578B2 (en) * | 2002-01-18 | 2005-09-06 | E. I. Du Pont De Nemours And Company | Volatile copper(II) complexes for deposition of copper films by atomic layer deposition |
| GB0201141D0 (en) * | 2002-01-18 | 2002-03-06 | Ic Innovations Ltd | Coordination complex |
| JP3670628B2 (ja) * | 2002-06-20 | 2005-07-13 | 株式会社東芝 | 成膜方法、成膜装置、および半導体装置の製造方法 |
| US20040247905A1 (en) * | 2003-04-16 | 2004-12-09 | Bradley Alexander Zak | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
| US20050227007A1 (en) * | 2004-04-08 | 2005-10-13 | Bradley Alexander Z | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
| JP2007511902A (ja) * | 2003-10-29 | 2007-05-10 | エーエスエム アメリカ インコーポレイテッド | 薄膜成長用反応装置 |
| US7439338B2 (en) | 2005-06-28 | 2008-10-21 | Micron Technology, Inc. | Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same |
| US7416994B2 (en) | 2005-06-28 | 2008-08-26 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
| US7572731B2 (en) | 2005-06-28 | 2009-08-11 | Micron Technology, Inc. | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same |
| US7892358B2 (en) * | 2006-03-29 | 2011-02-22 | Tokyo Electron Limited | System for introducing a precursor gas to a vapor deposition system |
-
2005
- 2005-06-28 US US11/168,160 patent/US7416994B2/en not_active Expired - Lifetime
-
2006
- 2006-06-07 TW TW095120255A patent/TWI398543B/zh not_active IP Right Cessation
- 2006-06-27 CN CNA2006800232835A patent/CN101208456A/zh active Pending
- 2006-06-27 AT AT06774110T patent/ATE509134T1/de not_active IP Right Cessation
- 2006-06-27 WO PCT/US2006/024995 patent/WO2007002672A2/en not_active Ceased
- 2006-06-27 EP EP10187947.6A patent/EP2290126B1/en not_active Expired - Lifetime
- 2006-06-27 KR KR1020077030544A patent/KR101274330B1/ko not_active Expired - Lifetime
- 2006-06-27 EP EP06774110A patent/EP1907600B1/en not_active Expired - Lifetime
- 2006-06-27 JP JP2008519486A patent/JP5003978B2/ja not_active Expired - Lifetime
-
2008
- 2008-07-29 US US12/181,578 patent/US7709399B2/en not_active Expired - Lifetime
-
2010
- 2010-03-31 US US12/751,283 patent/US8188464B2/en not_active Expired - Lifetime
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