WO2021085210A1 - 新規化合物、該化合物を含有する薄膜形成用原料及び薄膜の製造方法 - Google Patents
新規化合物、該化合物を含有する薄膜形成用原料及び薄膜の製造方法 Download PDFInfo
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- WO2021085210A1 WO2021085210A1 PCT/JP2020/039239 JP2020039239W WO2021085210A1 WO 2021085210 A1 WO2021085210 A1 WO 2021085210A1 JP 2020039239 W JP2020039239 W JP 2020039239W WO 2021085210 A1 WO2021085210 A1 WO 2021085210A1
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- 150000002009 diols Chemical class 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical class CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 125000003784 fluoroethyl group Chemical group [H]C([H])(F)C([H])([H])* 0.000 description 1
- 125000004216 fluoromethyl group Chemical group [H]C([H])(F)* 0.000 description 1
- 125000005816 fluoropropyl group Chemical group [H]C([H])(F)C([H])([H])C([H])([H])* 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- ZTOMUSMDRMJOTH-UHFFFAOYSA-N glutaronitrile Chemical compound N#CCCCC#N ZTOMUSMDRMJOTH-UHFFFAOYSA-N 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 1
- DGCTVLNZTFDPDJ-UHFFFAOYSA-N heptane-3,5-dione Chemical compound CCC(=O)CC(=O)CC DGCTVLNZTFDPDJ-UHFFFAOYSA-N 0.000 description 1
- SDAXRHHPNYTELL-UHFFFAOYSA-N heptanenitrile Chemical compound CCCCCCC#N SDAXRHHPNYTELL-UHFFFAOYSA-N 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 description 1
- TXGJTWACJNYNOJ-UHFFFAOYSA-N hexane-2,4-diol Chemical compound CCC(O)CC(C)O TXGJTWACJNYNOJ-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229940035429 isobutyl alcohol Drugs 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- NFWSQSCIDYBUOU-UHFFFAOYSA-N methylcyclopentadiene Chemical compound CC1=CC=CC1 NFWSQSCIDYBUOU-UHFFFAOYSA-N 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- LSHROXHEILXKHM-UHFFFAOYSA-N n'-[2-[2-[2-(2-aminoethylamino)ethylamino]ethylamino]ethyl]ethane-1,2-diamine Chemical compound NCCNCCNCCNCCNCCN LSHROXHEILXKHM-UHFFFAOYSA-N 0.000 description 1
- GVWISOJSERXQBM-UHFFFAOYSA-N n-methylpropan-1-amine Chemical class CCCNC GVWISOJSERXQBM-UHFFFAOYSA-N 0.000 description 1
- XHFGWHUWQXTGAT-UHFFFAOYSA-N n-methylpropan-2-amine Chemical class CNC(C)C XHFGWHUWQXTGAT-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- 239000012434 nucleophilic reagent Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- GJYXGIIWJFZCLN-UHFFFAOYSA-N octane-2,4-dione Chemical compound CCCCC(=O)CC(C)=O GJYXGIIWJFZCLN-UHFFFAOYSA-N 0.000 description 1
- BTNXBLUGMAMSSH-UHFFFAOYSA-N octanedinitrile Chemical compound N#CCCCCCCC#N BTNXBLUGMAMSSH-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- OOFGXDQWDNJDIS-UHFFFAOYSA-N oxathiolane Chemical compound C1COSC1 OOFGXDQWDNJDIS-UHFFFAOYSA-N 0.000 description 1
- AICOOMRHRUFYCM-ZRRPKQBOSA-N oxazine, 1 Chemical compound C([C@@H]1[C@H](C(C[C@]2(C)[C@@H]([C@H](C)N(C)C)[C@H](O)C[C@]21C)=O)CC1=CC2)C[C@H]1[C@@]1(C)[C@H]2N=C(C(C)C)OC1 AICOOMRHRUFYCM-ZRRPKQBOSA-N 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- GTCCGKPBSJZVRZ-UHFFFAOYSA-N pentane-2,4-diol Chemical compound CC(O)CC(C)O GTCCGKPBSJZVRZ-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- XRVCFZPJAHWYTB-UHFFFAOYSA-N prenderol Chemical compound CCC(CC)(CO)CO XRVCFZPJAHWYTB-UHFFFAOYSA-N 0.000 description 1
- 229950006800 prenderol Drugs 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000013772 propylene glycol Nutrition 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- MSXVEPNJUHWQHW-UHFFFAOYSA-N tertiary amyl alcohol Natural products CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003613 toluenes Chemical class 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- 125000004205 trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 1
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
- C07F15/065—Cobalt compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
- C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
- C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
- C07C251/10—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton
- C07C251/12—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton being acyclic
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
- C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
- C07D487/10—Spiro-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F13/00—Compounds containing elements of Groups 7 or 17 of the Periodic Table
- C07F13/005—Compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/04—Nickel compounds
- C07F15/045—Nickel compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/003—Compounds containing elements of Groups 2 or 12 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/06—Zinc compounds
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- C—CHEMISTRY; METALLURGY
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- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
- C07F7/2284—Compounds with one or more Sn-N linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Definitions
- the present invention relates to a novel compound, a raw material for forming a thin film containing the compound, a method using the compound as a precursor, and a thin film produced using the method and a method for producing a thin film.
- Patent Documents 1 to 3 propose a method of forming a metal-containing thin film by the ALD method using a compound having a ⁇ -diketiminate ligand.
- Patent Document 3 describes a compound having a ⁇ -diketimate ligand having one or more fluorine-containing organic groups, but does not describe its specific structure.
- the present invention is a compound represented by the following formula (1).
- R 1 to R 5 independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom
- M represents a metal atom
- n Represents the valence of the metal atom represented by M.
- at least one of R 2 , R 3 and R 4 represents a group containing a fluorine atom.
- the group containing a fluorine atom represented by R 1 to R 5 in the formula (1) is an alkyl group having 1 to 5 carbon atoms substituted with a fluorine atom.
- R 1 and R 5 in the formula (1) are alkyl groups having 1 to 5 carbon atoms, and at least one of R 2 and R 4 has 1 to 5 carbon atoms substituted with a fluorine atom. It is an alkyl group, and R 3 is preferably a hydrogen atom.
- M in the formula (1) is preferably a metal atom selected from copper, nickel, cobalt, tin, manganese and zinc.
- the present invention is a raw material for forming a thin film containing the above compound.
- the present invention is a method in which the above compound is used as a precursor in order to produce a metal-containing thin film by a chemical vapor deposition method.
- the present invention is a thin film produced by using the above method.
- a raw material gas obtained by vaporizing the raw material for forming a thin film is introduced into a treatment atmosphere in which a substrate is installed, and the compound in the raw material gas is decomposed and / or chemically reacted to cause the substrate.
- This is a method for producing a thin film that forms a metal-containing thin film on the surface.
- the raw material for forming a thin film containing the compound can form a high-quality metal-containing thin film by a CVD method, particularly an ALD method.
- the compound of the present invention is represented by the following formula (1).
- the compound of the present invention is suitable as a precursor in a method for producing a thin film having a vaporization step such as the ALD method, which is a kind of CVD method.
- R 1 to R 5 independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom
- M represents a metal atom
- n represents the valence of the metal atom represented by M.
- at least one of R 2 , R 3 and R 4 represents a group containing a fluorine atom.
- the alkyl groups represented by R 1 to R 5 and having 1 to 5 carbon atoms include methyl group, ethyl group, propyl group, isopropyl group, butyl group, sec-butyl group and tert. -Butyl group, isobutyl group, pentyl group, isopentyl group, tert-pentyl group and the like can be mentioned.
- a compound having a high vapor pressure it is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group, an ethyl group, an isopropyl group or a sec-butyl group, and a methyl group or a methyl group or a sec-butyl group. It is more preferably an ethyl group.
- the group containing a fluorine atom represented by R 1 to R 5 may be any one containing a fluorine atom and may be a fluorine atom.
- an alkyl group having 1 to 5 carbon atoms substituted with a fluorine atom is preferable, and fluoromethyl, difluoromethyl, trifluoromethyl, fluoroethyl, and difluoroethyl are preferable.
- Fluoroalkyl groups such as trifluoroethyl, fluoropropyl, difluoropropyl and trifluoropropyl are more preferred, and trifluoromethyl is even more preferred.
- the metal atom represented by M is barium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, iron, osmium, ruthenium, cobalt, tin, rhodium.
- M is preferably a metal atom selected from copper, nickel, cobalt, tin, manganese and zinc.
- R 1 and R 5 are alkyl groups having 1 to 5 carbon atoms, and at least one of R 2 and R 4 has 1 to 5 carbon atoms substituted with a fluorine atom.
- a compound having an alkyl group and R 3 being a hydrogen atom is preferable because it has a low melting point, is highly volatile, reacts with a reactive gas at a low temperature, and can form a metal-containing thin film with good productivity, and is particularly preferable.
- 1 and R 5 are methyl groups or ethyl groups
- R 2 is a trifluoromethyl group
- R 3 is a hydrogen atom
- R 4 is a methyl group
- these effects are remarkable. More preferred.
- a compound in which M is cobalt is more preferable because it is a liquid at room temperature.
- Specific examples of the preferred compound of the present invention include the following compound No. 1 to No. 48 is mentioned, but the present invention is not limited to these compounds.
- the following compound No. 1 to No. In 48 “Me” represents a methyl group, “Et” represents an ethyl group, “iPr” represents an isopropyl group, “tBu” represents a tert-butyl group, and “sBu” represents a tert-butyl group. Represents a sec-butyl group and "CF 3 " represents a trifluoromethyl group.
- the method for producing the compound represented by the above formula (1) is not particularly limited, and the compound is produced by applying a well-known method.
- a compound in which M is copper can be obtained by dissolving copper methoxide in ethanol, adding diketimine to react, removing the solvent, and purifying by distillation.
- the compound in which M is cobalt can be obtained by dissolving cobalt bistrimethylsilylamide in toluene, adding diketimine to react, removing the solvent, and purifying by distillation.
- the melting point of the compound of the present invention is preferably less than 100 ° C. at room temperature in order to ensure transportability in the piping of the film forming apparatus. It is more preferably a liquid.
- the raw material for forming a thin film of the present invention may contain a compound represented by the above formula (1) and may be used as a precursor for a thin film, and its composition varies depending on the type of the target thin film. For example, when producing a thin film containing only a single metal as a metal, the raw material for forming a thin film of the present invention does not contain a metal compound other than the metal and a semimetal compound.
- the raw material for forming a thin film of the present invention is a compound containing a desired metal and / or in addition to the compound represented by the above formula (1). It can contain a compound containing a semimetal (hereinafter referred to as "another precursor").
- the other precursors that can be used with the compound represented by the above formula (1) are not particularly limited and are thin films for the CVD method.
- a well-known general precursor used as a raw material for forming can be used.
- the other precursors described above include, for example, one or two types selected from the group consisting of compounds used as organic ligands such as alcohol compounds, glycol compounds, ⁇ -diketone compounds, cyclopentadiene compounds, and organic amine compounds.
- organic ligands such as alcohol compounds, glycol compounds, ⁇ -diketone compounds, cyclopentadiene compounds, and organic amine compounds.
- the above and compounds with silicon and metals can be mentioned.
- the metal species of Precasa include lithium, sodium, potassium, magnesium, calcium, strontium, barium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, iron, osmium, ruthenium, and cobalt.
- Examples of the alcohol compound used as the organic ligand of the above-mentioned precursor include methanol, ethanol, propanol, isopropyl alcohol, butanol, sec-butyl alcohol, isobutyl alcohol, tert-butyl alcohol, pentyl alcohol and isopentyl alcohol.
- Alcohols such as tert-pentyl alcohols; 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, 2- (2-methoxyethoxy) ethanol, 2-methoxy-1-methylethanol, 2-methoxy-1 , 1-dimethylethanol, 2-ethoxy-1,1-dimethylethanol, 2-isopropoxy-1,1-dimethylethanol, 2-butoxy-1,1-dimethylethanol, 2- (2-methoxyethoxy) -1 , 1-Dimethylethanol, 2-propoxy-1,1-diethylethanol, 2-sec-butoxy-1,1-diethylethanol, 3-methoxy-1,1-dimethylpropanol and other ether alcohols; dimethylaminoethanol, Ethylmethylaminoethanol, diethylaminoethanol, dimethylamino-2-pentanol, ethylmethylamino-2-pentanol, dimethylamino-2-methyl-2-pentanol, ethylmethyl
- glycol compound used as the organic ligand of the above-mentioned precursor examples include 1,2-ethanediol, 1,2-propanediol, 1,3-propanediol, 2,4-hexanediol, and 2, 2-Diol-1,3-propanediol, 2,2-diethyl-1,3-propanediol, 1,3-butanediol, 2,4-butanediol, 2,2-diethyl-1,3-butanediol , 2-Ethyl-2-butyl-1,3-propanediol, 2,4-pentanediol, 2-methyl-1,3-propanediol, 2-methyl-2,4-pentanediol, 2,4-hexane Examples thereof include diol, 2,4-dimethyl-2,4-pentanediol and the like.
- Examples of ⁇ -diketone compounds used as organic ligands for the above-mentioned precursors include acetylacetone, hexane-2,4-dione, 5-methylhexane-2,4-dione, and heptane-2,4-dione.
- cyclopentadiene compound used as the organic ligand of the above-mentioned precursor examples include cyclopentadiene, methylcyclopentadiene, ethylcyclopentadiene, propylcyclopentadiene, isopropylcyclopentadiene, butylcyclopentadiene, sec-butylcyclopentadiene, and the like. Examples thereof include isobutylcyclopentadiene, tert-butylcyclopentadiene, dimethylcyclopentadiene and tetramethylcyclopentadiene.
- Examples of the organic amine compound used as the organic ligand of the above-mentioned precursor include methylamine, ethylamine, propylamine, isopropylamine, butylamine, sec-butylamine, tert-butylamine, isobutylamine, dimethylamine, diethylamine and dipropyl. Examples thereof include amines, diisopropylamines, ethylmethylamines, propylmethylamines and isopropylmethylamines.
- the other precursors described above are known in the art, and their manufacturing methods are also known.
- the above-mentioned inorganic salt of the metal or its hydrate is reacted with the alkali metal alkoxide of the alcohol compound. Allows the manufacture of alkoxides.
- the inorganic salt of the metal or the hydrate thereof include halides and nitrates of the metal.
- the alkali metal alkoxide include sodium alkoxide, lithium alkoxide, potassium alkoxide and the like.
- a method of vaporizing and supplying a thin film-forming raw material independently for each component (hereinafter referred to as “single source method") and a multi-component raw material are mixed in advance with a desired composition.
- a method of vaporizing and supplying the mixed raw material (hereinafter referred to as “cocktail sauce method”).
- a compound whose thermal and / or oxidative decomposition behavior is similar to that of the compound represented by the above formula (1) is preferable.
- the cocktail sauce method as the other precursors described above, in addition to the behavior of thermal and / or oxidative decomposition being similar to the compound represented by the above formula (1), it is represented by the above formula (1). It is preferable that the compound does not deteriorate due to a chemical reaction or the like when mixed with the compound.
- a mixture of the compound represented by the above formula (1) and another precursor or a mixed solution obtained by dissolving the mixture in an organic solvent is used as a raw material for thin film formation. be able to.
- organic solvent a well-known general organic solvent can be used without any particular limitation.
- organic solvent include acetate esters such as ethyl acetate, butyl acetate and methoxyethyl acetate; ethers such as tetrahydrofuran, tetrahydropyran, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, dibutyl ether and dioxane; methyl.
- Ketones such as butyl ketone, methyl isobutyl ketone, ethyl butyl ketone, dipropyl ketone, diiso butyl ketone, methyl pentyl ketone, cyclohexanone, methyl cyclohexanone; hexane, cyclohexane, methylcyclohexane, dimethylcyclohexane, ethylcyclohexane, heptane, octane, toluene, Hydrocarbons such as xylene; 1-cyanopropane, 1-cyanobutane, 1-cyanohexane, cyanocyclohexane, cyanobenzene, 1,3-dicyanopropane, 1,4-dicyanobutane, 1,6-dicyanohexane, 1, Hydrocarbons having a cyano group such as 4-dicyanocyclohexane and 1,4
- the total amount of the precursor in the thin film forming raw material is preferably 0.01 mol / liter to 2.0 mol / liter. , 0.05 mol / liter to 1.0 mol / liter, more preferably.
- the total amount of the precursor is represented by the above formula (1) when the raw material for forming a thin film of the present invention does not contain a metal compound or an intermetallic compound other than the compound represented by the above formula (1).
- the raw material for forming a thin film of the present invention contains a compound containing another metal and / or a compound containing a semimetal (another precursor) in addition to the compound represented by the above formula (1). If so, it is the total amount of the compound represented by the above formula (1) and other precursors.
- the raw material for thin film formation of the present invention may contain a nucleophile, if necessary, in order to improve the stability of the compound represented by the above formula (1) and other precursors.
- the nucleophilic reagent include ethylene glycol ethers such as glyme, jigglime, triglime, and tetraglime, 18-crown-6, dicyclohexyl-18-crown-6, 24-crown-8, and dicyclohexyl-24-crown.
- Crown ethers such as -8, dibenzo-24-crown-8, ethylenediamine, N, N'-tetramethylethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, 1,1,4,7, Polyamines such as 7-pentamethyldiethylenetriamine, 1,1,4,7,10,10-hexamethyltriethylenetetrahydrofuran, triethoxytriethyleneamine, cyclic polyamines such as cyclolam and cyclone, pyridine, pyrrolidine, piperidine, morpholin , N-Methylpyrrolidine, N-methylpiperidine, N-methylmorpholine, tetrahydrofuran, tetrahydropyran, 1,4-dioxane, oxazole, thiazole, oxathiolane and other heterocyclic compounds, methyl acetoacetate, ethyl acetoacetate,
- the raw material for thin film formation of the present invention contains as little as possible impurity metal elements other than the constituents thereof, impurity halogens such as impurity chlorine, and impurity organics.
- the impurity metal element content is preferably 100 ppb or less for each element, more preferably 10 ppb or less, and the total amount is preferably 1 ppm or less, more preferably 100 ppb or less.
- the impurity halogen content is preferably 100 ppm or less, more preferably 10 ppm or less, and even more preferably 1 ppm or less.
- the total amount of the impurity organic content is preferably 500 ppm or less, more preferably 50 ppm or less, still more preferably 10 ppm or less.
- precursors, organic solvents and nucleophiles are used to reduce the water content of each. It is better to remove as much water as possible in advance.
- the water content of each of the precursor, the organic solvent and the nucleophile is preferably 10 ppm or less, more preferably 1 ppm or less.
- the raw material for forming a thin film of the present invention contains as few particles as possible.
- the number of particles larger than 0.3 ⁇ m is preferably 100 or less in 1 ml of the liquid phase, and is larger than 0.2 ⁇ m. More preferably, the number of particles is 100 or less in 1 ml of the liquid phase.
- a well-known ALD device can be used in the method for producing a thin film of the present invention.
- the ALD device include a device capable of bubbling and supplying a precursor as shown in FIGS. 1 and 3, and a device having a vaporization chamber as shown in FIGS. 2 and 4. Further, as shown in FIGS. 3 and 4, an apparatus capable of performing plasma treatment on the reactive gas can be mentioned.
- the device is not limited to the single-wafer type device provided with the film forming chamber (hereinafter referred to as “deposition reaction part”) as shown in FIGS. 1 to 4, and a device capable of simultaneously processing a large number of sheets using a batch furnace should be used. You can also. These can also be used as a CVD apparatus.
- the method for producing a thin film of the present invention includes a step of introducing a raw material gas obtained by vaporizing the raw material for forming a thin film into a deposition reaction section (treatment atmosphere) (raw material gas introduction step) and a metal in the raw material gas on the surface of the substrate.
- a step of exhausting gas from the deposition reaction portion (treatment atmosphere) between the precursor thin film forming step and the metal-containing thin film forming step and / or after the metal-containing thin film forming step ( It is preferable to have an exhaust process).
- a series of operations of forming a precursor thin film, an exhaust step, a metal-containing thin film forming step, and an exhaust step are performed in order, and the deposition is set as one cycle, and this cycle is repeated.
- the thickness of the thin film of the present invention can be adjusted.
- each step of the method for producing a thin film of the present invention will be described.
- the raw material gas introduction step represents a step of vaporizing the above-mentioned thin film forming raw material into steam (hereinafter referred to as “raw material gas”) and introducing the raw material gas into a film forming chamber in which a substrate is installed.
- raw material gas vaporizing the above-mentioned thin film forming raw material into steam
- FIGS. 1 and 3 heating and / or depressurizing in a container (hereinafter, referred to as “raw material container”) in which the raw material for thin film formation of the present invention is stored.
- raw material container in which the raw material for thin film formation of the present invention is stored.
- a gas transport method in which the vapor is vaporized into steam, and if necessary, the vapor is introduced into the deposition reaction section where the substrate is installed together with carrier gases such as argon, nitrogen, and helium.
- carrier gases such as argon, nitrogen, and helium.
- the raw material for thin film formation is transported to the vaporization chamber in the form of a liquid or solution, vaporized by heating and / or depressurizing in the vaporization chamber to form vapor, and the vapor is introduced into the deposition reaction section as a raw material gas.
- the gas transport method the compound itself represented by the above formula (1) can be used as a raw material for thin film formation.
- the compound represented by the above formula (1) or a solution obtained by dissolving the compound in an organic solvent can be used as a raw material for thin film formation.
- This mixture or mixed solution may further contain a nucleophile or the like.
- a multi-component ALD method containing a plurality of precursors is used as a single method as described in the column of raw materials for thin film formation.
- the raw material for thin film formation of the present invention is preferably vaporized at 0 ° C to 200 ° C.
- the pressure in the raw material container and the pressure in the vaporization chamber are preferably in the range of 1 Pa to 10,000 Pa.
- examples of the material of the substrate to be installed in the deposition reaction section include silicon; ceramics such as silicon nitride, titanium nitride, tantalum nitride, titanium oxide, ruthenium oxide, zirconium oxide, hafnium oxide, and lanthanum oxide; glass; Examples thereof include metals such as metallic cobalt and metallic ruthenium.
- examples of the shape of the substrate include plate-like, spherical, fibrous, and scaly shapes.
- the surface of the substrate may be flat or may have a three-dimensional structure such as a trench structure.
- the compound represented by the above formula (1) in the raw material gas introduced into the deposition reaction portion where the substrate is installed is deposited on the surface of the substrate to form a precursor thin film on the surface of the substrate. ..
- the substrate may be heated, or the deposition reaction portion may be heated to apply heat.
- the production conditions for forming the precursor thin film are not particularly limited, and for example, the reaction temperature (base temperature), the reaction pressure, the deposition rate, and the like can be appropriately determined according to the type of the thin film forming raw material.
- the reaction temperature is preferably 100 ° C.
- reaction pressure is preferably 1 Pa to 10,000 Pa, more preferably 10 Pa to 1,000 Pa.
- the deposition rate can be controlled by the supply conditions (vaporization temperature, vaporization pressure), reaction temperature, and reaction pressure of the raw material for thin film formation. If the deposition rate is high, the characteristics of the obtained thin film may deteriorate, and if it is low, problems may occur in productivity. Therefore, 0.01 nm / min to 100 nm / min is preferable, and 0.1 nm / min to 50 nm / min. Minutes are more preferred.
- the raw material gas that has not accumulated on the surface of the substrate is exhausted from the deposition reaction section.
- the raw material gas is completely exhausted from the deposition reaction section, but it is not always necessary to completely exhaust the raw material gas.
- the exhaust method include a method of purging the inside of the system of the deposition reaction part with an inert gas such as helium, nitrogen, and argon, a method of exhausting by depressurizing the inside of the system, and a method of combining these.
- the degree of decompression in the case of depressurization is preferably in the range of 0.01 Pa to 300 Pa, more preferably in the range of 0.01 Pa to 100 Pa.
- Metal-containing thin film forming process In the metal-containing thin film forming step, after the exhaust step, the reactive gas is introduced into the deposition reaction part, and the reactive gas is produced by the action of the reactive gas or the action of the reactive gas and the action of heat to form a precursor thin film, that is, A metal-containing thin film is formed by reacting with the compound represented by the above formula (1) deposited on the surface of the substrate.
- the reactive gas examples include oxidizing gases such as oxygen, ozone, nitrogen dioxide, nitrogen monoxide, water vapor, hydrogen peroxide, formic acid, acetic acid and anhydrous acetic acid, reducing gases such as hydrogen, monoalkylamines and dialkyls.
- oxidizing gases such as oxygen, ozone, nitrogen dioxide, nitrogen monoxide, water vapor, hydrogen peroxide, formic acid, acetic acid and anhydrous acetic acid
- reducing gases such as hydrogen, monoalkylamines and dialkyls.
- organic amine compounds such as amines, trialkylamines and alkylenediamines
- nitrided gases such as hydrazine and ammonia.
- the pressure in the deposition reaction section when this step is performed is preferably 1 Pa to 10,000 Pa, more preferably 10 Pa to 1,000 Pa.
- the raw material gas introduction step, the precursor thin film forming step, the exhaust stroke, the metal-containing thin film forming step, and the exhaust step are carried out in order, and the deposition by a series of operations is regarded as one cycle, and this cycle is the required film thickness.
- a metal-containing thin film containing a desired film thickness is produced by repeating the process a plurality of times until a thin film is obtained.
- the film thickness of the metal-containing thin film to be formed can be controlled by the number of cycles.
- energy such as plasma, light, and voltage may be applied to the deposition reaction portion, or a catalyst may be used.
- the time when the energy is applied and the time when the catalyst is used are not particularly limited, and for example, when the raw material gas for forming a thin film is introduced in the raw material gas introduction step, the heating step when forming the precursor thin film, or the heating step when forming the precursor thin film, or It may be at the time of introducing the reaction gas in the metal-containing thin film forming step, at the time of reacting the reactive gas with the precursor thin film, at the time of exhausting in the system in the exhausting step, or during each of the above steps.
- annealing treatment may be performed in an inert atmosphere, an oxidizing atmosphere or a reducing atmosphere in order to obtain better electrical characteristics, and a step may be performed. If embedding is required, a reflow step may be provided.
- the temperature is preferably 200 ° C. to 1,000 ° C., more preferably 250 ° C. to 500 ° C.
- the thin film produced by using the raw material for forming a thin film of the present invention covers a substrate such as metal, oxide ceramics, nitride ceramics, and glass by appropriately selecting other precursors, reactive gases, and production conditions. Therefore, a desired type of thin film can be obtained. Since the thin film of the present invention has excellent electrical and optical characteristics, for example, it is used for electrode materials and resistance films of memory elements represented by DRAM elements, antimagnetic films used for recording layers of hard disks, and polymer electrolyte fuel cells. It can be widely used in the production of catalyst materials and the like.
- Example 1 Compound No. Synthesis of 1 To a 100 ml four-necked flask, 0.60 g (4.7 mmol) of copper (II) methoxide complex and 20 ml of dehydrated ethanol were added at room temperature, and 1.69 g (9.4 mmol) of the corresponding diketimine ligand was added. The mixture was added dropwise under ice-cooling, and the mixture was stirred at room temperature for 20 hours. Ethanol was distilled off in an oil bath at 75 ° C. and a slight reduced pressure. Then, the purple solid remaining in the flask was distilled under reduced pressure (50 Pa) to obtain 0.92 g (2.2 mmol, yield 46%) of the purple solid as an outflow. As a result of analysis by single crystal X-ray analysis of this solid, the compound No. which is the target compound was found. It was confirmed that it was 1. The molecular structure of the obtained purple solid by single crystal X-ray analysis is shown in FIG.
- Example 2 Compound No. Synthesis of 19 To a 100 ml four-necked flask, 8.4 g (22.2 mmol) of cobalt bistrimethylsilylamide complex and 50 ml of dehydrated toluene were added at room temperature, and 6.8 g (44.4 mmol) of the corresponding diketimine ligand was added at room temperature. And reacted for 2 hours. The toluene solvent was distilled off in an oil bath at 100 ° C. and a slight reduced pressure. Then, the dark brown viscous liquid remaining in the flask was distilled under reduced pressure (20 to 30 Pa) to obtain 7.5 g (20.5 mmol, yield 92.4%) of the dark reddish brown liquid as a distillate.
- the obtained dark reddish brown liquid slowly solidified at room temperature to become a dark reddish brown solid having a melting point of 38 ° C.
- the compound No. which is the target compound was found. It was confirmed that it was 19.
- the molecular structure of the obtained dark reddish brown solid by single crystal X-ray analysis is shown in FIG.
- Example 4 Compound No. Synthesis of 43 To a 100 ml four-necked flask, 0.57 g (4.2 mmol) of zinc chloride complex and 40 ml of ether were added at room temperature, and 1.93 g (8.4 mmol) of the corresponding diketimine ligand converted to Li was added to ice. It was added dropwise under cold conditions and allowed to react for 16 hours. The ether solution was distilled off at an oil bath of 50 ° C. and normal pressure. Hexane was added to the obtained yellow solid, and filtration was performed. The filtrate was desolvated in an oil bath at 60 ° C. and slightly reduced pressure.
- Example 5 The above compound No. 1 was used as a raw material for forming a thin film, and a thin film was produced on the surface of a ruthenium wafer as a substrate under the following conditions using the ALD apparatus of FIG.
- the composition of the thin film was analyzed using X-ray electron spectroscopy, it was confirmed that the thin film was a copper-containing thin film and the residual carbon content was less than the detection limit of 0.1 atom%.
- the film thickness of the thin film was measured using a scanning electron microscope method, the thin film formed on the surface of the ruthenium wafer was a smooth film of 2 nm, and the film thickness obtained per cycle was about 0. It was .02 nm.
- Manufacturing method ALD method Reaction temperature (base temperature): 200 ° C Reactive gas: hydrogen
- Example 6 The above compound No. A thin film was produced on the surface of the ruthenium wafer by the same method as in Example 5 except that 19 was used as a raw material for forming a thin film, the reaction temperature was changed to 300 ° C., and the process was changed to 300 cycles.
- the composition of the thin film was analyzed using X-ray electron spectroscopy, it was confirmed that the thin film was a cobalt-containing thin film and the residual carbon content was less than the detection limit of 0.1 atom%.
- the film thickness of the thin film was measured using a scanning electron microscope method, the thin film formed on the surface of the ruthenium wafer was a smooth film of 6 nm, and the film thickness obtained per cycle was about 0. It was .02 nm.
- Example 7 A thin film was produced on the surface of the copper wafer in the same manner as in Example 6 except that the ruthenium wafer was changed to a copper wafer.
- the composition of the thin film was analyzed using X-ray electron spectroscopy, it was confirmed that the thin film was a cobalt-containing thin film and the residual carbon content was less than the detection limit of 0.1 atom%.
- the film thickness of the thin film was measured using a scanning electron microscope method, the thin film formed on the surface of the copper wafer was a smooth film of 3 nm, and the film thickness obtained per cycle was about 0.01 nm. Met.
- Comparative Example 8 A thin film containing cobalt was produced on the surface of the copper wafer by the same method as in Comparative Example 7 except that the ruthenium wafer was changed to a copper wafer, but a smooth film could not be formed. In addition, residual carbon was detected in the obtained film.
- At least one of R 2 , R 3 and R 4 is volatilized by using a compound substituted with a group containing a fluorine atom as a raw material for thin film formation. It was confirmed that a thin film with high properties and high quality can be produced.
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Abstract
Description
本発明の薄膜形成用原料は、上記式(1)で表される化合物を含有し、薄膜のプレカーサとするものであればよく、その組成は目的とする薄膜の種類によって異なる。例えば、金属として単一の金属のみを含む薄膜を製造する場合、本発明の薄膜形成用原料は、その金属以外の金属化合物及び半金属化合物を含有しない。一方、複数の金属及び/又は半金属を含む薄膜を製造する場合、本発明の薄膜形成用原料は、上記式(1)で表される化合物に加えて、所望の金属を含む化合物及び/又は半金属を含む化合物(以下、「他のプレカーサ」と称する)を含有することができる。
原料ガス導入工程は、上述した薄膜形成用原料を気化させて蒸気(以下、「原料ガス」と称する)とし、該原料ガスを基体が設置された成膜チャンバーへ導入する工程を表す。
薄膜形成用原料の輸送供給方法としては、図1及び図3に示すように、本発明の薄膜形成用原料が貯蔵される容器(以下、「原料容器」と称する)中で加熱及び/又は減圧することにより気化させて蒸気とし、必要に応じてアルゴン、窒素、ヘリウム等のキャリアガスと共に、該蒸気を基体が設置された堆積反応部内へと導入する気体輸送法、並びに図2及び図4に示すように、薄膜形成用原料を液体又は溶液の状態で気化室まで輸送し、気化室で加熱及び/又は減圧することにより気化させて蒸気とし、該蒸気を原料ガスとして堆積反応部へと導入する液体輸送法がある。気体輸送法の場合、上記式(1)で表される化合物そのものを薄膜形成用原料とすることができる。液体輸送法の場合、上記式(1)で表される化合物、又は該化合物を有機溶剤に溶解した溶液を薄膜形成用原料とすることができる。この混合物や混合溶液は求核性試薬等を更に含んでいてもよい。
前駆体薄膜形成工程では、基体が設置された堆積反応部に導入した原料ガス中の、上記式(1)で表される化合物を基体表面に堆積させて、基体表面に前駆体薄膜を形成する。このとき、基体を加熱するか、又は堆積反応部を加熱して熱を加えてもよい。前駆体薄膜を形成するときの製造条件は、特に限定されず、例えば、反応温度(基体温度)、反応圧力、堆積速度等を薄膜形成用原料の種類に応じて適宜決めることができる。反応温度については、本発明の薄膜形成用原料が充分に反応する温度である100℃以上が好ましく、100℃~400℃がより好ましい。反応圧力は1Pa~10,000Paが好ましく、10Pa~1,000Paがより好ましい。
前駆体薄膜を形成後、基体の表面に堆積しなかった原料ガスを堆積反応部から排気する。この際、原料ガスが堆積反応部から完全に排気されるのが理想であるが、必ずしも完全に排気する必要はない。排気方法としては、例えば、ヘリウム、窒素、アルゴン等の不活性ガスにより堆積反応部の系内をパージする方法、系内を減圧することで排気する方法、これらを組み合わせた方法等が挙げられる。減圧する場合の減圧度は、0.01Pa~300Paの範囲が好ましく、0.01Pa~100Paの範囲がより好ましい。
金属含有薄膜形成工程では、排気工程後、堆積反応部に反応性ガスを導入して、反応性ガスの作用又は反応性ガスの作用と熱の作用により、反応性ガスを、前駆体薄膜、すなわち基体の表面に堆積させた上記式(1)で表される化合物と反応させて、金属含有薄膜が形成される。
上記金属含有薄膜形成後、未反応の反応性ガス及び副生ガスを堆積反応部から排気する。この際、反応性ガス及び副生ガスが堆積反応部から完全に排気されるのが理想的であるが、必ずしも完全に排気する必要はない。排気方法及び減圧する場合の減圧度は、上述した前駆体薄膜形成工程後の排気工程と同様である。
100mlの四つ口フラスコに、室温にて銅(II)メトキシド錯体0.60g(4.7mmol)と脱水エタノール20mlを加え、対応するジケチミン配位子1.69g(9.4mmol)を氷冷下で滴下し、室温で20時間撹拌を行った。オイルバス75℃、微減圧にてエタノールを留去した。その後、フラスコ内に残った紫色固体を減圧下(50Pa)で蒸留し、流出分として紫色固体0.92g(2.2mmol,収率46%)得た。この固体の単結晶X線解析による分析の結果、目的化合物である化合物No.1であることを確認した。得られた紫色固体の単結晶X線解析による分子構造を図5に示す。
結晶格子サイズ:0.11mm×0.11mm×0.10mm
結晶系:三斜晶系
(非対称単位中に分子2個,R1=0.0820,wR2=0.1807)
格子パラメータ:
a=8.859Å
b=9.349Å
c=12.58Å
α=74.69°
β=71.28°
γ=63.91°
V=877Å3
100mlの四つ口フラスコに、室温にてコバルトビストリメチルシリルアミド錯体8.4g(22.2mmol)と脱水トルエン50mlを加え、対応するジケチミン配位子6.8g(44.4mmol)を室温で滴下し、2時間反応させた。オイルバス100℃、微減圧にてトルエン溶媒を留去した。その後、フラスコ内に残った濃褐色粘性液体を減圧下(20~30Pa)で蒸留し、留出分として濃赤褐色液体7.5g(20.5mmol,収率92.4%)を得た。得られた濃赤褐色液体は、室温にてゆっくり固化し融点38℃の濃赤褐色固体となった。この固体の単結晶X線解析による分析の結果、目的化合物である化合物No.19であることを確認した。得られた濃赤褐色固体の単結晶X線解析による分子構造を図6に示す。
結晶格子サイズ:0.26mm×0.24mm×0.07mm
結晶系:単斜晶系
(非対称単位中に分子8個,R1=0.0598,wR2=0.1310)
格子パラメータ:
a=28.047Å
b=9.9896Å
c=18.954Å
β=125.704°
V=4312Å3
100mlの四つ口フラスコに、室温にてスズビストリメチルシリルアミド錯体1.65g(3.8mmol)と脱水ヘキサン25mlを加え、対応するジケチミン配位子1.58g(7.6mmol)を氷冷下で滴下し、16時間反応させた。オイルバス60℃、微減圧にてヘキサン溶媒を留去した。その後、フラスコ内に残った橙色液体を減圧下(20~30Pa)で蒸留し、留出分として黄色固体0.05g(0.1mmol,収率2.5%)を得た。この黄色固体の1H-NMR及びICP-AESによる分析の結果、目的化合物である化合物No.27であることを確認した。得られた黄色固体の1H-NMR及びICP-AESによる分析結果を以下に示す。
0.868-0.904ppm(3H,triplet)、1.147-1.183ppm(3H,triplet)、1.563ppm(3H,singlet)、3.049-3.067ppm(2H,doublet)、3.585ppm(2H,singlet)、5.166ppm(1H,singlet)
スズ含有量:22.1質量%(理論値:22.27質量%)
100mlの四つ口フラスコに、室温にて塩化亜鉛錯体0.57g(4.2mmol)とエーテル40mlを加え、Li化した対応するジケチミン配位子1.93g(8.4mmol)を氷冷下で滴下し、16時間反応させた。オイルバス50℃、常圧にてエーテル溶液を留去した。得られた黄色固体にヘキサンを加え、ろ過を行った。ろ液をオイルバス60℃、微減圧にて脱溶媒を行った。その後、フラスコ内に残った橙色液体を減圧下(20~30Pa)で蒸留し、留出分として淡黄色液体1.18g(2.5mmol,収率59%)を得た。この淡黄色液体の1H-NMR及びICP-AESによる分析の結果、目的化合物である化合物No.43であることを確認した。得られた淡黄色液体の1H-NMR及びICP-AESによる分析結果を以下に示す。
0.889-0.925ppm(3H,triplet)、1.079-1.115ppm(3H,triplet)、1.547ppm(3H,singlet)、2.977-3.043ppm(2H,multiplet)、3.502-3.557ppm(2H,multiplet)、5.008ppm(1H,singlet)
亜鉛含有量:13.8質量%(理論値:13.63質量%)
式(1)における、R1及びR5がCH2CF3であり、R2及びR4がMeであり、R3がHであり、且つMがCuである下記比較化合物1の合成を試みた。
100mlの四つ口フラスコに、室温にて銅(II)メトキシド錯体1.07g(8.5mmol)と脱水エタノール50mlを加え、下記比較化合物1と対応するジケチミン配位子4.46g(17mmol)を氷冷下で滴下し、室温で18時間撹拌を行った。オイルバス75℃、微減圧にてエタノールを留去した。その後、フラスコ内に残った黒色固体を減圧下(50Pa)で蒸留したが、目的物を単離することができなかった。
上記実施例1~4で合成して得られた化合物No.1、化合物No.19、化合物No.27、化合物No.43及び下記表1~4に記載の比較化合物2~5を用いて、下記の評価を行った。
目視によって、常圧25℃における化合物の状態を観察し、固体化合物については微小融点測定装置を用いて融点を測定した。これらの結果について表1~4に示す。
TG-DTAを用いて、10Torr、Ar流量:50mL/分、昇温速度10℃/分、走査温度範囲を30℃~600℃として測定し、試験化合物の重量が50質量%減少した時の温度(℃)を「減圧TG-DTA50質量%減少時の温度(℃)」として評価した。減圧TG-DTA50質量%減少時の温度(℃)が低いほど、低温で蒸気が得られることを示す。これらの結果について表1~4に示す。
上記化合物No.1を、薄膜形成用原料として用い、図1のALD装置を用い、下記の条件で、基体のルテニウムウェハの表面上に薄膜を製造した。X線電子分光法を用いて薄膜の組成を分析したところ、薄膜は、銅を含有する薄膜であり、残留炭素含有量は、検出限界である0.1atom%よりも少ないことを確認した。また、走査型電子顕微鏡法を用いて薄膜の膜厚を測定したところ、ルテニウムウェハ表面上に形成された薄膜は、2nmの平滑な膜であり、1サイクル当たりに得られる膜厚は、約0.02nmであった。
製造方法:ALD法
反応温度(基体温度):200℃
反応性ガス:水素
下記(1)~(4)からなる一連の工程を1サイクルとして、100サイクル繰り返した。
(1)原料容器温度120℃、原料容器内圧力100Paの条件で気化された薄膜形成用原料の蒸気(原料ガス)を堆積反応部に導入し、系圧100Paで20秒間、基体表面に原料ガスを堆積させて前駆体薄膜を形成する。
(2)15秒間のアルゴンパージにより、堆積しなかった原料ガスを系内から排気する。
(3)反応性ガスを堆積反応部に導入し、系圧力100Paで20秒間、前駆体薄膜と反応性ガスとを反応させる。
(4)15秒間のアルゴンパージにより、未反応の反応性ガス及び副生ガスを系内から排気する。
上記化合物No.19を薄膜形成用原料として用い、反応温度を300℃に変更し、工程を300サイクルに変更したこと以外は、実施例5と同様の方法で、ルテニウムウェハの表面上に薄膜を製造した。X線電子分光法を用いて薄膜の組成を分析したところ、薄膜は、コバルトを含有する薄膜であり、残留炭素含有量は、検出限界である0.1atom%よりも少ないことを確認した。また、走査型電子顕微鏡法を用いて薄膜の膜厚を測定したところ、ルテニウムウェハ表面上に形成された薄膜は、6nmの平滑な膜であり、1サイクル当たりに得られる膜厚は、約0.02nmであった。
ルテニウムウェハを銅ウェハに変更したこと以外は、実施例6と同様の方法で、銅ウェハの表面上に薄膜を製造した。X線電子分光法を用いて薄膜の組成を分析したところ、薄膜は、コバルトを含有する薄膜であり、残留炭素含有量は、検出限界である0.1atom%よりも少ないことを確認した。走査型電子顕微鏡法を用いて薄膜の膜厚を測定したところ、銅ウェハ表面上に形成された薄膜は、3nmの平滑な膜であり、1サイクル当たりに得られる膜厚は、約0.01nmであった。
化合物No.1を比較化合物2に変更し、原料容器温度120℃を140℃に変更したこと以外は、実施例5と同様の方法で、ルテニウムウェハの表面上に銅を含有する薄膜を製造したが、平滑な膜を形成することができなかった。また、得られた膜に残留炭素が検出された。
化合物No.19を比較化合物3に変更し、原料容器温度120℃を140℃に変更したこと以外は、実施例6と同様の方法で、ルテニウムウェハの表面上にコバルトを含有する薄膜を製造したが、平滑な膜を形成することができなかった。また、得られた膜に残留炭素が検出された。
ルテニウムウェハを銅ウェハに変更したこと以外は、比較例7と同様の方法で、銅ウェハの表面上にコバルトを含有する薄膜を製造したが、平滑な膜を形成することができなかった。また、得られた膜に残留炭素が検出された。
比較例6、7及び8において良好な薄膜を製造できなかった原因としては、比較化合物2及び3の蒸気圧が低いことにより原料容器温度を高くする必要があったが、原料容器温度が140℃の条件では、比較化合物2及び3に熱分解が生じていたと考える。
Claims (8)
- 前記フッ素原子を含有する基が、フッ素原子で置換されている炭素原子数1~5のアルキル基である請求項1に記載の化合物。
- 式(1)中のR1及びR5は、炭素原子数1~5のアルキル基であり、R2及びR4の少なくとも一つは、フッ素原子で置換されている炭素原子数1~5のアルキル基であり、R3は、水素原子である請求項1又は2に記載の化合物。
- 式(1)中のMが、銅、ニッケル、コバルト、スズ、マンガン及び亜鉛から選択される金属原子である請求項1~3の何れか一項に記載の化合物。
- 請求項1~4の何れか一項に記載の化合物を含有する薄膜形成用原料。
- 化学気相成長法により金属含有薄膜を製造するために、請求項1~4の何れか一項に記載の化合物をプレカーサとして用いる方法。
- 請求項6に記載の方法を用いて製造された薄膜。
- 請求項5に記載の薄膜形成用原料を気化させて得られる原料ガスを、基体が設置された処理雰囲気内に導入し、前記原料ガス中の前記化合物を分解及び/又は化学反応させて該基体の表面に金属含有薄膜を形成する薄膜の製造方法。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2146260C1 (ru) * | 1998-11-04 | 2000-03-10 | Институт элементоорганических соединений им. А.Н.Несмеянова РАН | Полифторированные дииминаты металлов в качестве предшественников для металлизации различных твердых поверхностей и для получения металлических зеркал |
CN101274939A (zh) * | 2008-05-16 | 2008-10-01 | 华东理工大学 | 新型β-二亚胺类锆化合物及其制备方法和应用 |
JP2009503247A (ja) * | 2005-06-28 | 2009-01-29 | マイクロン テクノロジー, インク. | β‐ジケチミナート配位子源およびその金属含有化合物、およびそれらを含むシステムと方法 |
US20120308739A1 (en) * | 2011-05-30 | 2012-12-06 | L'air Liquide Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Methods for deposition of alkaline earth metal fluoride films |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503978B1 (ja) | 1968-08-03 | 1975-02-13 | ||
US7572731B2 (en) | 2005-06-28 | 2009-08-11 | Micron Technology, Inc. | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same |
CN115362157A (zh) * | 2020-04-01 | 2022-11-18 | 株式会社Adeka | 锌化合物、薄膜形成用原料、薄膜及其制造方法 |
-
2020
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2146260C1 (ru) * | 1998-11-04 | 2000-03-10 | Институт элементоорганических соединений им. А.Н.Несмеянова РАН | Полифторированные дииминаты металлов в качестве предшественников для металлизации различных твердых поверхностей и для получения металлических зеркал |
JP2009503247A (ja) * | 2005-06-28 | 2009-01-29 | マイクロン テクノロジー, インク. | β‐ジケチミナート配位子源およびその金属含有化合物、およびそれらを含むシステムと方法 |
CN101274939A (zh) * | 2008-05-16 | 2008-10-01 | 华东理工大学 | 新型β-二亚胺类锆化合物及其制备方法和应用 |
US20120308739A1 (en) * | 2011-05-30 | 2012-12-06 | L'air Liquide Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Methods for deposition of alkaline earth metal fluoride films |
Non-Patent Citations (5)
Title |
---|
BOZBAG S. E., UNAL U., KURYKIN M. A., AYALA C. J., AINDOW M., ERKEY C.: "Thermodynamic Control of Metal Loading and Composition of Carbon Aerogel Supported Pt-Cu Alloy Nanoparticles by Supercritical Deposition", JOURNAL OF PHYSICAL CHEMISTRY C, vol. 117, no. 13, 2013, pages 6777 - 6787, XP055822002 * |
BUKALOV SERGEY S; AYSIN RINAT R; LEITES LARISSA A; KURYKIN MIKHAIL A; KHRUSTALEV VICTOR N: "Non-rigid molecule of copper(II) diiminato Cu[CF3C(NH)C(F)C(NH)CF3]2, its conformational polymorphism in crystal and structure in solutions (Raman, UV-vis and quantum chemistry study", JOURNAL OF MOLECULAR STRUCTURE, vol. 1098, 2015, pages 246 - 254, XP029259901 * |
JESPERSEN, HENRIK T. ET AL.: "Supercritical fluids applied to the sol-gel process for preparation of AEROMOSILS/palladium particle nanocomposite catalyst", JOURNAL OF SUPERCRITICAL FLUIDS, vol. 46, no. 2, 2008, pages 178 - 184, XP023316168, DOI: 10.1016/j.supflu.2008.04.013 * |
KUCHEROV A., FINASHINA E., KRAMAREVA N., ROGACHEVA V., ZEZIN A., SAID-GALIYEV E., KUSTOV L.: "Comparative study of Cu(II) catalytic sites immobilized onto different polymeric supports", MACROMOLECULAR SYMPOSIA, vol. 204, no. 1, 2003, pages 175 - 189, XP055821999 * |
SHREIDER, V. A.: "Electrochemical synthesis and properties of some metal perfluoro- beta -diketodiiminates", INORGANICA CHIMICA ACTA, vol. 64, no. 3, 1982, pages L101 - L103, XP000961570, DOI: 10.1016/S0020-1693(00)90292-5 * |
Cited By (1)
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