WO2022009695A1 - アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 - Google Patents
アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 Download PDFInfo
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- WO2022009695A1 WO2022009695A1 PCT/JP2021/024110 JP2021024110W WO2022009695A1 WO 2022009695 A1 WO2022009695 A1 WO 2022009695A1 JP 2021024110 W JP2021024110 W JP 2021024110W WO 2022009695 A1 WO2022009695 A1 WO 2022009695A1
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- Prior art keywords
- atom
- thin film
- group
- alkyl group
- carbon atoms
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- 239000010409 thin film Substances 0.000 title claims abstract description 128
- -1 Alkoxide compound Chemical class 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title abstract description 55
- 239000000463 material Substances 0.000 title abstract description 5
- 150000001875 compounds Chemical class 0.000 claims abstract description 72
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 58
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 45
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 38
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 35
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 31
- 125000004429 atom Chemical group 0.000 claims abstract description 29
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002994 raw material Substances 0.000 claims description 88
- 239000000758 substrate Substances 0.000 claims description 19
- 230000008016 vaporization Effects 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 5
- 125000004206 2,2,2-trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 150000002738 metalloids Chemical group 0.000 claims description 3
- 150000002815 nickel Chemical group 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 52
- 239000002243 precursor Substances 0.000 description 39
- 239000010408 film Substances 0.000 description 26
- 238000000231 atomic layer deposition Methods 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 17
- 239000000203 mixture Substances 0.000 description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 239000003960 organic solvent Substances 0.000 description 10
- 238000005979 thermal decomposition reaction Methods 0.000 description 10
- 238000009834 vaporization Methods 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 7
- 239000013110 organic ligand Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 6
- 239000012434 nucleophilic reagent Substances 0.000 description 6
- 239000003921 oil Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- ORWODCPKEIIFAG-UHFFFAOYSA-N 3-[ethyl(methyl)amino]-1,1,1-trifluoropropan-2-ol Chemical compound CCN(C)CC(O)C(F)(F)F ORWODCPKEIIFAG-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 5
- 229940126214 compound 3 Drugs 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000000921 elemental analysis Methods 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical class C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 235000015067 sauces Nutrition 0.000 description 4
- 238000012916 structural analysis Methods 0.000 description 4
- 150000003613 toluenes Chemical class 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 3
- FTFYDDRPCCMKBT-UHFFFAOYSA-N 1-butylcyclopenta-1,3-diene Chemical compound CCCCC1=CC=CC1 FTFYDDRPCCMKBT-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000005749 Copper compound Substances 0.000 description 3
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QEGNUYASOUJEHD-UHFFFAOYSA-N 1,1-dimethylcyclohexane Chemical compound CC1(C)CCCCC1 QEGNUYASOUJEHD-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 2
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- WFRBDWRZVBPBDO-UHFFFAOYSA-N 2-methyl-2-pentanol Chemical compound CCCC(C)(C)O WFRBDWRZVBPBDO-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 238000010835 comparative analysis Methods 0.000 description 2
- 229940125782 compound 2 Drugs 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- QFYBRRIPNPVECS-UHFFFAOYSA-N copper;methanol Chemical compound [Cu].OC.OC QFYBRRIPNPVECS-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 125000001028 difluoromethyl group Chemical group [H]C(F)(F)* 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002334 glycols Chemical class 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- ILPNRWUGFSPGAA-UHFFFAOYSA-N heptane-2,4-dione Chemical compound CCCC(=O)CC(C)=O ILPNRWUGFSPGAA-UHFFFAOYSA-N 0.000 description 2
- TXGJTWACJNYNOJ-UHFFFAOYSA-N hexane-2,4-diol Chemical compound CCC(O)CC(C)O TXGJTWACJNYNOJ-UHFFFAOYSA-N 0.000 description 2
- NDOGLIPWGGRQCO-UHFFFAOYSA-N hexane-2,4-dione Chemical compound CCC(=O)CC(C)=O NDOGLIPWGGRQCO-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 229910017053 inorganic salt Inorganic materials 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012038 nucleophile Substances 0.000 description 2
- AICOOMRHRUFYCM-ZRRPKQBOSA-N oxazine, 1 Chemical compound C([C@@H]1[C@H](C(C[C@]2(C)[C@@H]([C@H](C)N(C)C)[C@H](O)C[C@]21C)=O)CC1=CC2)C[C@H]1[C@@]1(C)[C@H]2N=C(C(C)C)OC1 AICOOMRHRUFYCM-ZRRPKQBOSA-N 0.000 description 2
- 238000006864 oxidative decomposition reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
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- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
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- BVPKYBMUQDZTJH-UHFFFAOYSA-N 1,1,1-trifluoro-5,5-dimethylhexane-2,4-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(F)(F)F BVPKYBMUQDZTJH-UHFFFAOYSA-N 0.000 description 1
- SHXHPUAKLCCLDV-UHFFFAOYSA-N 1,1,1-trifluoropentane-2,4-dione Chemical compound CC(=O)CC(=O)C(F)(F)F SHXHPUAKLCCLDV-UHFFFAOYSA-N 0.000 description 1
- VNPQQEYMXYCAEZ-UHFFFAOYSA-N 1,2,3,4-tetramethylcyclopenta-1,3-diene Chemical compound CC1=C(C)C(C)=C(C)C1 VNPQQEYMXYCAEZ-UHFFFAOYSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- BGYBONWLWSMGNV-UHFFFAOYSA-N 1,4,7,10,13,16,19,22-octaoxacyclotetracosane Chemical compound C1COCCOCCOCCOCCOCCOCCOCCO1 BGYBONWLWSMGNV-UHFFFAOYSA-N 0.000 description 1
- MIAJKNFXBPVTCU-UHFFFAOYSA-N 1-(2-methoxyethoxy)-2,2,6,6-tetramethylheptane-3,5-dione Chemical compound COCCOCC(C)(C)C(=O)CC(=O)C(C)(C)C MIAJKNFXBPVTCU-UHFFFAOYSA-N 0.000 description 1
- PDGHGLMSHZDIEW-UHFFFAOYSA-N 1-(dimethylamino)-2-methylpentan-2-ol Chemical compound CN(C)CC(CCC)(O)C PDGHGLMSHZDIEW-UHFFFAOYSA-N 0.000 description 1
- MZLDACGYLPYWMZ-UHFFFAOYSA-N 1-(dimethylamino)pentan-2-ol Chemical compound CCCC(O)CN(C)C MZLDACGYLPYWMZ-UHFFFAOYSA-N 0.000 description 1
- JCALRHVFTLBTOZ-UHFFFAOYSA-N 1-butoxy-2-methylpropan-2-ol Chemical compound CCCCOCC(C)(C)O JCALRHVFTLBTOZ-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- BCYNAHGOLUTMDM-UHFFFAOYSA-N 1-ethoxy-2-methylpropan-2-ol Chemical compound CCOCC(C)(C)O BCYNAHGOLUTMDM-UHFFFAOYSA-N 0.000 description 1
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- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- NFWSQSCIDYBUOU-UHFFFAOYSA-N methylcyclopentadiene Chemical compound CC1=CC=CC1 NFWSQSCIDYBUOU-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- DWFKOMDBEKIATP-UHFFFAOYSA-N n'-[2-[2-(dimethylamino)ethyl-methylamino]ethyl]-n,n,n'-trimethylethane-1,2-diamine Chemical compound CN(C)CCN(C)CCN(C)CCN(C)C DWFKOMDBEKIATP-UHFFFAOYSA-N 0.000 description 1
- LSHROXHEILXKHM-UHFFFAOYSA-N n'-[2-[2-[2-(2-aminoethylamino)ethylamino]ethylamino]ethyl]ethane-1,2-diamine Chemical compound NCCNCCNCCNCCNCCN LSHROXHEILXKHM-UHFFFAOYSA-N 0.000 description 1
- GVWISOJSERXQBM-UHFFFAOYSA-N n-methylpropan-1-amine Chemical class CCCNC GVWISOJSERXQBM-UHFFFAOYSA-N 0.000 description 1
- XHFGWHUWQXTGAT-UHFFFAOYSA-N n-methylpropan-2-amine Chemical class CNC(C)C XHFGWHUWQXTGAT-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- GJYXGIIWJFZCLN-UHFFFAOYSA-N octane-2,4-dione Chemical compound CCCCC(=O)CC(C)=O GJYXGIIWJFZCLN-UHFFFAOYSA-N 0.000 description 1
- BTNXBLUGMAMSSH-UHFFFAOYSA-N octanedinitrile Chemical compound N#CCCCCCCC#N BTNXBLUGMAMSSH-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- OOFGXDQWDNJDIS-UHFFFAOYSA-N oxathiolane Chemical compound C1COSC1 OOFGXDQWDNJDIS-UHFFFAOYSA-N 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 description 1
- GTCCGKPBSJZVRZ-UHFFFAOYSA-N pentane-2,4-diol Chemical compound CC(O)CC(C)O GTCCGKPBSJZVRZ-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- XRVCFZPJAHWYTB-UHFFFAOYSA-N prenderol Chemical compound CCC(CC)(CO)CO XRVCFZPJAHWYTB-UHFFFAOYSA-N 0.000 description 1
- 229950006800 prenderol Drugs 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000013772 propylene glycol Nutrition 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C215/00—Compounds containing amino and hydroxy groups bound to the same carbon skeleton
- C07C215/02—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton
- C07C215/04—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being saturated
- C07C215/06—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being saturated and acyclic
- C07C215/08—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being saturated and acyclic with only one hydroxy group and one amino group bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/04—Nickel compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Definitions
- the present invention relates to a novel compound, a thin film forming raw material containing the compound, and a method for producing a thin film using the thin film forming raw material.
- Thin film materials containing metal elements and semi-metal atoms have excellent electrical and optical properties, such as electronic component members such as electrode films, resistance films, and barrier films, recording media members such as magnetic films, and solar cell thin films. It is used for electrode members and the like.
- Examples of the method for producing the above thin film include a sputtering method, an ion plating method, a metal organic compound decomposition (MOD) method such as a coating thermal decomposition method and a solgel method, and a chemical vapor deposition method.
- MOD metal organic compound decomposition
- the atomic layer deposition (ALD) method has many advantages such as excellent composition controllability, step coverage, suitable for mass production, and hybrid integration.
- the chemical vapor deposition method (hereinafter, may be simply referred to as “CVD”) including the above method is the optimum manufacturing process.
- Patent Document 1 discloses an aminoalkoxide-titanium compound, an aminoalkoxide-zirconium compound, and an aminoalkoxide-hafnium compound.
- Patent Document 2 discloses an aminoalkoxide-copper compound.
- Patent Document 3 discloses an aminoalkoxide-copper compound, an aminoalkoxide-nickel compound, and an aminoalkoxide-cobalt compound.
- the properties particularly required for the compound (precaser) used as a raw material are that the vapor pressure is high and the melting point is low (preferably liquid at room temperature). ), High thermal stability, and high-quality thin film can be produced with high productivity.
- the vapor pressure is high, the thermal stability is high, and a high-quality thin film can be produced with high productivity when used as a raw material for forming a thin film.
- an object of the present invention is to provide an alkoxide compound which has a higher vapor pressure than a conventional alkoxide compound, has high thermal stability, and can produce a high-quality thin film with high productivity when used as a raw material for forming a thin film. And.
- an alkoxide compound having a ligand having a specific structure can solve the above-mentioned problems, and have reached the present invention.
- the present invention is an alkoxide compound represented by the following general formula (1).
- R 1 and R 2 independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, respectively, and R 3 and R 4 respectively. Each independently represents an alkyl group having 1 to 5 carbon atoms or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, and R 5 is a hydrogen atom, a group containing a fluorine atom or 1 carbon atom.
- R 6 represents a group containing a fluorine atom
- M represents a metal atom or a semi-metal atom
- n represents a valence of an atom represented by M, where M is represented.
- R 3 and R 4 each independently represent an alkyl group having 1 to 2 carbon atoms
- R 5 represents a hydrogen atom.
- the present invention is a raw material for forming a thin film containing the above compound.
- the present invention comprises a step of vaporizing the raw material for forming a thin film, a step of introducing a vapor containing an alkoxide compound represented by the vaporized general formula (1) into a treatment atmosphere, and a step of decomposing and / or decomposing the compound.
- it is a method for producing a thin film including a step of forming a thin film containing a metal atom or a semi-metal atom on the surface of the substrate by a chemical reaction.
- the alkoxide compound represented by the following general formula (2) has the same meaning as the alkoxide compound represented by the above general formula (1).
- R 1 and R 2 independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, respectively, and R 3 and R 4 respectively.
- R 5 is a hydrogen atom, a group containing a fluorine atom or 1 carbon atom.
- 5 represents an alkyl group
- R 6 represents a group containing a fluorine atom
- M represents a metal atom or a semi-metal atom
- n represents a valence of an atom represented by M.
- the hydrogen atom of the alkyl group may be partially or wholly substituted with a fluorine atom.
- M is a copper atom
- R 3 and R 4 are independently carbon. It represents an alkyl group having 1 to 2 atoms
- R 5 represents a hydrogen atom.
- an alkoxide compound which has a higher vapor pressure than a conventional alkoxide compound, has high thermal stability, and can produce a high-quality thin film with high productivity when used as a raw material for forming a thin film.
- the compound of the present invention is suitable as a raw material for forming a thin film for the CVD method, and since it has an ALD window, it can be preferably used as a raw material for forming a thin film used for the ALD method.
- FIG. 1 is a schematic view showing an embodiment of an ALD apparatus used in the method for producing a thin film according to the present invention.
- FIG. 2 is a schematic view showing another embodiment of the ALD apparatus used in the method for producing a thin film according to the present invention.
- FIG. 3 is a schematic view showing still another embodiment of the ALD apparatus used in the method for producing a thin film according to the present invention.
- FIG. 4 is a schematic view showing still another embodiment of the ALD apparatus used in the method for producing a thin film according to the present invention.
- the alkoxide compound of the present invention is represented by the above general formula (1).
- the alkoxide compound of the present invention is suitable as a precursor in a method for producing a thin film having a vaporization step such as the ALD method, which is a kind of CVD method.
- R 1 and R 2 independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, respectively.
- R 3 and R 4 each independently represent an alkyl group having 1 to 5 carbon atoms or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms.
- R 5 represents a hydrogen atom, a group containing a fluorine atom, or an alkyl group having 1 to 5 carbon atoms.
- R 6 represents a group containing a fluorine atom
- M represents a metal atom or a metalloid atom.
- n represents the valence of the atom represented by M. However, when M is a copper atom, R 3 and R 4 each independently represent an alkyl group having 1 to 2 carbon atoms, and R 5 represents a hydrogen atom.
- alkyl group having 1 to 5 carbon atoms in R 1 to R 5 , a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, and a third group.
- examples thereof include a butyl group, a pentyl group, an isopentyl group, and a neopentyl group.
- fluorine atom-containing alkyl group having 1 to 5 carbon atoms in R 1 to R 4 means that a part or all of the hydrogen atoms of the alkyl group having 1 to 5 carbon atoms are substituted with fluorine atoms.
- fluorine atom-containing alkyl group include a fluoromethyl group, a difluoromethyl group, a trifluoromethyl group, a 2,2,2-trifluoroethyl group and a 1,1,2,2,2-pentafluoroethyl group.
- group containing a fluorine atom in R 5 and R 6 refers to a fluoro group or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms.
- group containing a fluorine atom here is the same as the specific example of the "fluorine atom-containing alkyl group having 1 to 5 carbon atoms" in R 1 to R 4.
- the metal atom or metalloid atom represented by M described above includes a copper atom, a cobalt atom, a nickel atom, a tin atom, a zinc atom, an yttrium atom, an iron atom, an indium atom, a gallium atom, an aluminum atom, a titanium atom, and a germanium.
- Examples include an atom, a zirconium atom, a hafnium atom and a silicon atom.
- R 1 to R 6 and M are appropriately selected according to the method for producing a thin film to be applied.
- R 1 to R 6 and M it is preferable to select R 1 to R 6 and M so as to obtain a compound having a large vapor pressure and high thermal stability.
- R 1 and R 2 of the general formula (1) Since the vapor pressure of the compound is large, as R 1 and R 2 of the general formula (1), a hydrogen atom or an alkyl group having 1 to 3 carbon atoms is preferable, a hydrogen atom or a methyl group is more preferable, and a hydrogen atom is used. Especially preferable. Since the thermal stability of the compound is high, as R 3 and R 4 of the general formula (1), an alkyl group having 1 to 3 carbon atoms is preferable, and a methyl group or an ethyl group is more preferable. It is particularly preferable when R 3 is a methyl group and R 4 is an ethyl group.
- R 5 of the general formula (1) Since the vapor pressure of the compound is large, as R 5 of the general formula (1), a group containing a hydrogen atom or a fluorine atom is preferable, and a hydrogen atom is more preferable. Since the vapor pressure of the compound is high and the thermal stability is high, R 6 in the general formula (1) includes a monofluoromethyl group, a difluoromethyl group, a trifluoromethyl group, and a 2,2,2-trifluoroethyl group.
- a 3,3,3-trifluoropropyl group is preferable, a trifluoromethyl group, a 2,2,2-trifluoroethyl group or a 3,3,3-trifluoropropyl group is more preferable, and a trifluoromethyl group is particularly preferable. preferable.
- R 1 to R 6 and M When used in a method for producing a thin film by a MOD method that does not involve a vaporization step, R 1 to R 6 and M should be arbitrarily selected depending on the solubility in the solvent used, the thin film forming reaction, and the like. Can be done.
- the alkoxide compound represented by the above general formula (1) As a preferable specific example of the alkoxide compound represented by the above general formula (1), the following compound No. 1 to No. 174 is mentioned. In addition, the following compound No. 1 to No. In 174, “Me” represents a methyl group, “Et” represents an ethyl group, and “iPr” represents an isopropyl group.
- the method for producing the alkoxide compound represented by the general formula (1) is not particularly limited, and the compound is produced by applying a well-known reaction.
- a metal methoxyd complex having a corresponding structure and an alcohol ligand having the corresponding structure are reacted, the solvent is distilled off, and then the obtained reaction product is distilled, purified or sublimated. It can be obtained by purification.
- No. 4, No. 40, No. 76, No. 109 and No. 110 alkoxide compounds are preferred, No. 4, No. 40, No. 76 and No. 110 alkoxide compounds are more preferred.
- the raw material for forming a thin film of the present invention contains an alkoxide compound represented by the above general formula (1) as a thin film precursor.
- the form depends on the manufacturing process to which the thin film forming raw material is applied. For example, in the case of producing a thin film containing only a metal atom or a semi-metal atom as a metal, the raw material for forming a thin film of the present invention contains a metal compound other than the alkoxide compound represented by the above general formula (1) and a semi-metal compound. No.
- the raw material for forming a thin film of the present invention contains a desired metal in addition to the alkoxide compound represented by the above general formula (1). It may also contain a compound and / or a compound containing a semimetal (hereinafter, may be referred to as "another precursor").
- the raw material for forming a thin film of the present invention may further contain an organic solvent and / or a nucleophilic reagent, as will be described later.
- the raw material for thin film formation of the present invention is a raw material for chemical vapor deposition (hereinafter, "" It may be described as “raw material for CVD”).
- the alkoxide compound represented by the above general formula (1) has an ALD window
- the raw material for forming a thin film of the present invention is particularly suitable for the ALD method.
- the raw material for forming a thin film of the present invention is a raw material for chemical vapor deposition
- the form thereof is appropriately selected by a method such as a transport supply method of the CVD method used.
- the CVD raw material is vaporized by heating and / or depressurizing in a container in which the raw material is stored (hereinafter, also referred to as a “raw material container”) to obtain a raw material gas.
- a gas that introduces the raw material gas into a film forming chamber in which a substrate is installed hereinafter, may be referred to as a "deposition reaction part" together with a carrier gas such as argon, nitrogen, and helium that is used as needed.
- the alkoxide compound itself represented by the above general formula (1) can be used as a CVD raw material.
- the alkoxide compound itself represented by the above general formula (1) or a solution obtained by dissolving the compound in an organic solvent can be used as a raw material for CVD.
- These CVD raw materials may further contain other precursors, nucleophilic reagents and the like.
- a method of vaporizing and supplying the CVD raw material independently for each component (hereinafter, also referred to as “single source method”) and a method of preliminarily preparing the multi-component raw material with a desired composition.
- a method of vaporizing and supplying the mixed mixed raw materials (hereinafter, also referred to as "cocktail sauce method”).
- the cocktail sauce method a mixture of the alkoxide compound represented by the above general formula (1) and another precursor or a mixed solution obtained by dissolving the mixture in an organic solvent can be used as a raw material for CVD.
- This mixture or mixed solution may further contain a nucleophilic reagent or the like.
- organic solvent a well-known general organic solvent can be used without any particular limitation.
- organic solvent include acetate esters such as ethyl acetate, butyl acetate and methoxyethyl acetate; ethers such as tetrahydrofuran, tetrahydropyran, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, dibutyl ether and dioxane; methyl.
- Ketones such as butyl ketone, methylisobutylketone, ethylbutylketone, dipropylketone, diisobutylketone, methylamylketone, cyclohexanone, methylcyclohexanone; hexane, cyclohexane, methylcyclohexane, dimethylcyclohexane, ethylcyclohexane, heptane, octane, toluene, Hydrocarbons such as xylene; 1-cyanopropane, 1-cyanobutane, 1-cyanohexane, cyanocyclohexane, cyanobenzene, 1,3-dicyanopropane, 1,4-dicyanobutane, 1,6-dicyanohexane, 1, Hydrocarbons having a cyano group such as 4-dicyanocyclohexane and 1,4-dicyanobenzen
- the total amount of precursor in the raw material for forming a thin film is preferably 0.01 mol / liter to 2.0 mol / liter. , 0.05 mol / liter to 1.0 mol / liter, more preferably.
- the total amount of the precursor is the above general formula (1) when the raw material for forming a thin film of the present invention does not contain a metal compound other than the alkoxide compound represented by the above general formula (1) and a semi-metal compound.
- the compound (other precursor) it means the total amount of the alkoxide compound represented by the above general formula (1) and the other precursor.
- the other precursors used together with the alkoxide compound represented by the above general formula (1) are not particularly limited, and are generally known and generally used as raw materials for CVD. Alkoxide can be used.
- the other precursors described above include one or more selected from the group consisting of compounds used as organic ligands such as alcohol compounds, glycol compounds, ⁇ -diketone compounds, cyclopentadiene compounds, and organic amine compounds. , Compounds with silicon and metals can be mentioned.
- the metal species of Praseodymium include lithium, sodium, potassium, magnesium, calcium, strontium, barium, titanium, zirconium, hafnium, vanadium, tantalum, chromium, molybdenum, tungsten, manganese, iron, cobalt, rhodium, iridium, nickel and palladium.
- Examples of the alcohol compound used as the organic ligand of the above-mentioned precursor include methanol, ethanol, propanol, isopropyl alcohol, butanol, secondary butyl alcohol, isobutyl alcohol, tertiary butyl alcohol, pentyl alcohol, isopentyl alcohol, and the like.
- Alcohols such as 3pentyl alcohols; 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, 2- (2-methoxyethoxy) ethanol, 2-methoxy-1-methylethanol, 2-methoxy-1,1 -Dimethylethanol, 2-ethoxy-1,1-dimethylethanol, 2-isopropoxy-1,1-dimethylethanol, 2-butoxy-1,1-dimethylethanol, 2- (2-methoxyethoxy) -1,1 -Ether alcohols such as dimethylethanol, 2-propoxy-1,1-diethylethanol, 2-s-butoxy-1,1-diethylethanol, 3-methoxy-1,1-dimethylpropanol; dimethylaminoethanol, ethylmethyl Aminoethanol, diethylaminoethanol, dimethylamino-2-pentanol, ethylmethylamino-2-pentanol, dimethylamino-2-methyl-2-pentanol, ethylmethyla
- Glycol compounds used as organic ligands for the above other precursors include 1,2-ethanediol, 1,2-propanediol, 1,3-propanediol, 2,4-hexanediol, and 2,2-.
- ⁇ -diketone compounds used as organic ligands for the other precursors mentioned above include acetylacetone, hexane-2,4-dione, 5-methylhexane-2,4-dione, heptane-2,4-dione, and 2, -Methylheptane-3,5-dione, 5-methylheptane-2,4-dione, 6-methylheptane-2,4-dione, 2,2-dimethylheptane-3,5-dione, 2,6-dimethyl Heptane-3,5-dione, 2,2,6-trimethylheptane-3,5-dione, 2,2,6,6-tetramethylheptane-3,5-dione, octane-2,4-dione, 2, , 2,6-trimethyloctane-3,5-dione, 2,6-dimethyloctane-3,5-dione, 2,9-dimethylnonan
- cyclopentadiene compound used as an organic ligand for the other precursors described above examples include cyclopentadiene, methylcyclopentadiene, ethylcyclopentadiene, propylcyclopentadiene, isopropylcyclopentadiene, butylcyclopentadiene, second butylcyclopentadiene, and isobutylcyclo.
- examples thereof include pentadiene, a third butylcyclopentadiene, dimethylcyclopentadiene, and tetramethylcyclopentadiene.
- Examples of the organic amine compound used as the organic ligand of the above-mentioned precursor include methylamine, ethylamine, propylamine, isopropylamine, butylamine, second butylamine, third butylamine, isobutylamine, dimethylamine, diethylamine and dipropyl. Examples thereof include amines, diisopropylamines, ethylmethylamines, propylmethylamines and isopropylmethylamines.
- the other precursors described above are known in the art, and their manufacturing methods are also known.
- the above-mentioned inorganic salt of a metal or a hydrate thereof is reacted with an alkali metal alkoxide of the alcohol compound.
- the inorganic salt of the metal or its hydrate include metal halides and nitrates
- examples of the alkali metal alkoxide include sodium alkoxide, lithium alkoxide, potassium alkoxide and the like.
- the other precursor a compound whose behavior of thermal decomposition and / or oxidative decomposition is similar to that of the alkoxide compound represented by the above general formula (1).
- a chemical reaction at the time of mixing in addition to the behavior of thermal decomposition and / or oxidative decomposition being similar to that of the alkoxide compound represented by the above general formula (1), a chemical reaction at the time of mixing. It is preferable to use a compound that does not cause a change that impairs the desired properties of the precursor due to the above.
- the raw material for forming a thin film of the present invention may contain a nucleophile, if necessary, in order to impart stability to the alkoxide compound represented by the above general formula (1) and other precursors. ..
- the nucleophilic reagent include ethylene glycol ethers such as glyme, diglyme, triglime, and tetraglyme, 18-crown-6, dicyclohexyl-18-crown-6, 24-crown-8, and dicyclohexyl-24-crown-8.
- Dibenzo-24 Crown-8 and other crown ethers ethylenediamine, N, N'-tetramethylethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, 1,1,4,7,7- Polyamines such as pentamethyldiethylenetriamine, 1,1,4,7,10,10-hexamethyltriethylenetetramine, triethoxytriethyleneamine, cyclic polyamines such as cyclum and cyclone, pyridine, pyrrolidine, piperidine, morpholine, N.
- the amount of these nucleophiles used is preferably 0.1 mol to 10 mol, more preferably 1 to 4 mol, based on 1 mol of the total amount of precursor.
- the raw material for forming a thin film of the present invention should contain as little as possible impurity metal elements other than the constituents thereof, impurity halogens such as impurity chlorine, and impurity organics.
- the impurity metal element content is preferably 100 ppb or less for each element, more preferably 10 ppb or less, and the total amount is preferably 1 ppm or less, more preferably 100 ppb or less.
- a gate insulating film, a gate film, or a barrier layer of an LSI it is necessary to reduce the contents of alkali metal elements and alkaline earth metal elements that affect the electrical characteristics of the obtained thin film.
- the impurity halogen content is preferably 100 ppm or less, more preferably 10 ppm or less, and most preferably 1 ppm or less.
- the total amount of the impurity organic content is preferably 500 ppm or less, more preferably 50 ppm or less, and most preferably 10 ppm or less.
- Moisture causes particles to be generated in the raw materials for chemical vapor deposition and particles to be generated during thin film formation. Therefore, for precursors, organic solvents and nucleophilic reagents, as much water as possible before use. It is preferable to remove.
- the water content of each of the precursor, the organic solvent and the nucleophilic reagent is preferably 10 ppm or less, and more preferably 1 ppm or less.
- the raw material for forming a thin film of the present invention contains as little particles as possible in order to reduce or prevent particle contamination of the formed thin film.
- the number of particles larger than 0.3 ⁇ m is preferably 100 or less in 1 mL of the liquid phase, and is larger than 0.2 ⁇ m.
- the number of particles is more preferably 1000 or less in 1 mL of the liquid phase, and most preferably the number of particles larger than 0.2 ⁇ m is 100 or less in 1 mL of the liquid phase.
- a method for producing a thin film using the raw material for forming a thin film of the present invention will be described.
- a raw material gas obtained by vaporizing the raw material for forming a thin film of the present invention and a reactive gas used as needed are introduced into a film forming chamber (treatment atmosphere) in which a substrate is installed.
- a CVD method in which a precursor in a raw material gas is decomposed and / or chemically reacted on a substrate to grow and deposit a thin film containing a metal atom or a semi-metal atom on the surface of the substrate.
- the method of transporting and supplying the raw material, the method of depositing, the manufacturing conditions, the manufacturing equipment, and the like are not particularly limited, and well-known general conditions and methods can be used.
- Examples of the reactive gas used as required above include oxidizing gases such as oxygen, ozone and water vapor, hydrocarbon compounds such as methane and ethane, and reducing gases such as hydrogen, carbon monoxide and organic metal compounds. , Organic amine compounds such as monoalkylamines, dialkylamines, trialkylamines and alkylenediamines, and nitrided gases such as hydrazine and ammonia. These reactive gases may be used alone or in combination of two or more.
- the alkoxide compound represented by the general formula (1) has a property of reacting well with a reducing gas or an oxidizing gas, and has a property of reacting particularly well with hydrogen, water vapor or ozone. .. Therefore, as the reactive gas, it is preferable to use a reducing gas or an oxidizing gas, and it is particularly preferable to use hydrogen, steam or ozone.
- the above-mentioned transportation supply method the above-mentioned gas transportation method, liquid transportation method, single source method, cocktail sauce method and the like can be mentioned.
- the above-mentioned deposition methods include thermal CVD in which a raw material gas or a raw material gas and a reactive gas are reacted only by heat to deposit a thin film, plasma CVD using heat and plasma, optical CVD using heat and light, and heat. , Photoplasma CVD using light and plasma, ALD in which the deposition reaction of CVD is divided into elementary processes and the deposition is performed stepwise at the molecular level.
- Examples of the material of the substrate include silicon; ceramics such as silicon nitride, titanium nitride, tantalum nitride, titanium oxide, titanium nitride, ruthenium oxide, zirconium oxide, hafnium oxide and lanthanum oxide; glass; metals such as metallic cobalt. Be done.
- Examples of the shape of the substrate include plate-like, spherical, fibrous, and scaly shapes.
- the surface of the substrate may be flat or may have a three-dimensional structure such as a trench structure.
- reaction temperature base temperature
- reaction pressure deposition rate and the like.
- the reaction temperature is preferably room temperature to 500 ° C, more preferably 150 ° C to 350 ° C.
- the reaction pressure is preferably 10 Pa to atmospheric pressure in the case of thermal CVD or optical CVD, and preferably 10 Pa to 2,000 Pa in the case of using plasma.
- the deposition rate can be controlled by the supply conditions (vaporization temperature, vaporization pressure), reaction temperature, and reaction pressure of the raw materials. If the deposition rate is high, the characteristics of the obtained thin film may deteriorate, and if it is low, productivity problems may occur. Therefore, 0.01 nm / min to 100 nm / min is preferable, and 1 nm / min to 50 nm / min. Is more preferable. Further, in the case of the ALD method, the number of cycles is controlled so that a desired film thickness can be obtained.
- the temperature and pressure when the raw material for forming a thin film is vaporized into a raw material gas can be mentioned.
- the step of vaporizing the raw material for forming a thin film into a raw material gas may be performed in a raw material container or in a vaporization chamber.
- the raw material for forming a thin film of the present invention is preferably evaporated at 0 ° C to 150 ° C.
- the pressure in the raw material container and the pressure in the vaporization chamber are both preferably 1 Pa to 10,000 Pa.
- the method for producing a thin film of the present invention employs the ALD method, and is a raw material introduction step of vaporizing a raw material for forming a thin film into a raw material gas by the above-mentioned transportation supply method and introducing the raw material gas into a film forming chamber.
- a precursor thin film forming step of forming a precursor thin film on the surface of the substrate by the compound in the raw material gas an exhaust step of exhausting an unreacted compound gas, and a chemical reaction of the precursor thin film with a reactive gas. It may have a metal or semi-metal-containing thin film forming step of forming a thin film containing a metal or a semi-metal on the surface of the substrate.
- each step of the above ALD method will be described in detail by taking the case of forming a metal thin film as an example.
- the above-mentioned raw material introduction step is performed.
- the preferable temperature and pressure when the raw material for thin film formation is used as the raw material gas are the same as those described in the method for producing a thin film by the CVD method.
- the raw material gas introduced into the film forming chamber comes into contact with the surface of the substrate to form a precursor thin film on the surface of the substrate (precursor thin film forming step).
- the substrate may be heated or the film forming chamber may be heated to apply heat.
- the precursor thin film formed in this step is a thin film formed from the alkoxide compound represented by the general formula (1), or a part of the alkoxide compound represented by the general formula (1) is decomposed. And / or a thin film produced by reaction, and has a composition different from that of the target metal thin film.
- the substrate temperature at which this step is performed is preferably room temperature to 500 ° C, more preferably 150 ° C to 350 ° C.
- the pressure of the system (inside the film forming chamber) when this step is performed is preferably 1 Pa to 10,000 Pa, more preferably 10 Pa to 1,000 Pa.
- unreacted compound gas and by-produced gas are exhausted from the film formation chamber (exhaust process).
- the unreacted compound gas or by-produced gas is completely exhausted from the film forming chamber, but it is not always necessary to completely exhaust the gas.
- the exhaust method include a method of purging the inside of the system with an inert gas such as nitrogen, helium, and argon, a method of exhausting by depressurizing the inside of the system, and a method of combining these.
- the degree of pressure reduction is preferably 0.01 Pa to 300 Pa, more preferably 0.01 Pa to 100 Pa.
- a reducing gas is introduced as a reactive gas into the film forming chamber, and the precursor thin film to the metal thin film obtained in the previous precursor thin film forming step is subjected to the action of the reducing gas or the action of the reducing gas and heat.
- the temperature at which heat is applied in this step is preferably room temperature to 500 ° C, more preferably 150 to 350 ° C.
- the pressure of the system (inside the film forming chamber) when this step is performed is preferably 1 Pa to 10,000 Pa, more preferably 10 Pa to 1,000 Pa. Since the alkoxide compound represented by the general formula (1) has good reactivity with the reducing gas, a high-quality metal thin film having a low residual carbon content can be obtained.
- thin film deposition by a series of operations including the above-mentioned raw material introduction step, precursor thin film forming step, exhaust step and metal-containing thin film forming step is performed. It may be a cycle, and this cycle may be repeated a plurality of times until a thin film having a required film thickness is obtained. In this case, after performing one cycle, it is preferable to exhaust the unreacted compound gas, the reactive gas, and the by-product gas from the deposition reaction section in the same manner as in the above exhaust step, and then perform the next one cycle. ..
- energy such as plasma, light, and voltage may be applied, or a catalyst may be used.
- the timing of applying the energy and the timing of using the catalyst are not particularly limited, and are, for example, in the compound gas introduction in the raw material introduction step, the heating in the precursor thin film forming step or the metal-containing thin film forming step, and the exhaust step. It may be at the time of exhausting in the system, at the time of introducing the reducing gas in the metal-containing thin film forming step, or during each of the above steps.
- annealing treatment may be performed in an inert atmosphere, an oxidizing atmosphere or a reducing atmosphere in order to obtain better electrical characteristics, and a step may be performed. If embedding is required, a reflow process may be provided.
- the temperature is 200 ° C. to 1,000 ° C., preferably 250 ° C. to 500 ° C.
- a well-known ALD device can be used in the method for producing a thin film of the present invention.
- the ALD device include a device capable of bubbling and supplying a precursor as shown in FIGS. 1 and 3, and a device having a vaporization chamber as shown in FIGS. 2 and 4. Further, as shown in FIGS. 3 and 4, an apparatus capable of performing plasma treatment on the reactive gas can be mentioned.
- the device is not limited to the single-wafer type device provided with the film forming chamber (hereinafter referred to as “deposition reaction unit”) as shown in FIGS. 1 to 4, and a device capable of simultaneously processing a large number of sheets using a batch furnace should be used. You can also. These can also be used as a CVD apparatus.
- the thin film produced by using the raw material for forming a thin film of the present invention can be of a desired type such as metal, oxide ceramics, nitride ceramics, glass, etc. by appropriately selecting other precursors, reactive gases and production conditions. It can be a thin film.
- the thin film is known to exhibit electrical characteristics, optical characteristics, and the like, and is applied to various applications.
- a metal thin film, a metal oxide thin film, a gold nitride thin film, an alloy, a metal-containing composite oxide thin film, and the like can be mentioned.
- These thin films are widely used, for example, in the production of electrode materials for memory elements represented by DRAM elements, resistance films, diamagnetic films used for recording layers of hard disks, catalyst materials for polymer electrolyte fuel cells, and the like. ing.
- Example 1 Compound No. Production of 4 Sodium hydride (0.24 g, 10.0 mmol) is dissolved in dehydrated THF (20 ml) at room temperature in a 100 ml four-necked flask. To this solution is added 3- (ethylmethylamino) -1,1,1-trifluoropropane-2-ol (1.71 g, 10.0 mmol), stirred at 85 ° C. for 1 hour, then at room temperature for 17 hours. Stir. This solution is added dropwise to nickel (II) chloride, and the mixture is stirred at 85 ° C. for 3 hours and then at room temperature for 15 hours. The solvent is distilled off in an oil bath at 70 ° C. under a slight reduced pressure.
- Example 2 Compound No. Production of 40
- the tinbistrimethylsilylamide complex (1.92 g, 4.36 mmol) is dissolved in dehydrated toluene (30 ml) at room temperature.
- 3- (ethylmethylamino) -1,1,1-trifluoropropane-2-ol (1.49 g, 8.72 mmol) and the mixture is stirred at room temperature for 22 hours.
- the solvent is distilled off in an oil bath at 100 ° C. under a slight reduced pressure.
- the purple viscous liquid remaining in the flask was distilled and purified under reduced pressure (20 to 30 Pa), and the white crystalline compound No. 1 was used as a distillate.
- 40 was obtained in an amount of 1.35 g (2.94 mmol, yield 68%).
- Example 3 Compound No. Production of 110 To a 100 ml four-necked flask, 0.60 g (6.3 mmol) of copper (II) methoxide complex and 20 ml of dehydrated toluene were added at room temperature, and 3- (ethylmethylamino) -1,1,1-tri Fluoropropane-2-ol (2.2 g, 13 mmol) was added dropwise under ice-cooling, and the mixture was stirred at room temperature for 20 hours. The methanol and toluene solvents produced as a by-product were distilled off in an oil bath at 70 to 90 ° C. under a slight reduced pressure. Then, the purple solid remaining in the flask was sublimated and purified under reduced pressure (40 Pa), and compound No. 1 of the purple solid was used as a volatile component. 2.0 g (5.0 mmol, yield 79%) of 110 was obtained.
- Example 4 Compound No. Production of 76
- the cobalt bistrimethylsilylamide complex (1.90 g, 5.01 mmol) is dissolved in dehydrated toluene (30 ml) at room temperature.
- 3- (Ethylmethylamino) -1,1,1-trifluoropropane-2-ol (1.71 g, 10.0 mmol) is added to this solution, and the mixture is stirred at room temperature for 22 hours.
- the solvent is distilled off in an oil bath at 100 ° C. under a slight reduced pressure. Then, the purple viscous liquid remaining in the flask was sublimated and purified under reduced pressure (20 to 30 Pa), and the compound No.
- Example 5 Compound No. Production of 109 To a 100 ml four-necked flask, 0.60 g (6.3 mmol) of copper (II) methoxide complex and 20 ml of dehydrated toluene were added at room temperature, and 3- (dimethylamino) -1,1,1-trifluoro was added. Propane-2-ol (2.0 g, 13 mmol) was added dropwise under ice-cooling, and the mixture was stirred at room temperature for 20 hours. The methanol and toluene solvents produced as a by-product were distilled off in an oil bath at 70 to 90 ° C. under a slight reduced pressure. Then, the purple solid remaining in the flask was sublimated and purified under reduced pressure (40 Pa), and compound No. 1 of the purple solid was used as a volatile component. 1.4 g (3.7 mmol, yield 59%) of 109 was obtained.
- compound No. 4 was a compound having a higher thermal decomposition start temperature than the comparative compound 1.
- compound No. 40 was a compound having a higher thermal decomposition start temperature than the comparative compound 2.
- compound No. 110 was a compound having a higher thermal decomposition start temperature than the comparative compound 3.
- compound No. 76 was a compound having a higher thermal decomposition start temperature than the comparative compound 4. That is, it was found that the alkoxide compound of the present invention is a compound having a higher thermal decomposition start temperature than the conventionally known alkoxide compound.
- Vapor pressure evaluation The following vapor pressure evaluations were performed on the compounds of the present invention and the comparative compounds 1 to 3 obtained in Examples 1 to 3. (Vapor pressure evaluation) Using TG-DTA, measured under normal pressure with an Ar flow rate of 100 mL / min, a temperature rise rate of 10 ° C./min, and a scanning temperature range of 30 ° C. to 600 ° C., when the weight of the test compound was reduced by 50% by mass. The temperature (° C.) was evaluated as "temperature (° C.) when the normal pressure TG-DTA decreased by 50% by mass".
- the test was separately measured under a reduced pressure of 10 Torr, Ar flow rate: 50 mL / min, heating rate 10 ° C./min, and scanning temperature range of 30 ° C. to 600 ° C.
- the temperature (° C.) when the weight of the compound was reduced by 50% by mass was evaluated as "temperature (° C.) when the reduced pressure TG-DTA was reduced by 50% by mass”.
- Examples 6 to 10 and Comparative Examples 1 to 4 Production of a metal thin film and a metal oxide thin film by the ALD method
- the compounds of the present invention obtained in Examples 1 to 5 and comparative compounds 1 to 4 are used for chemical vapor phase growth.
- a metal thin film and a metal oxide thin film were produced on a silicon substrate by the ALD method under the following conditions using the ALD apparatus shown in FIG. 1 as a raw material.
- the obtained thin film was measured for film thickness by X-ray reflectivity and spectroscopic ellipsometry, confirmed the compound of the thin film by X-ray diffraction method, and measured the carbon content in the thin film by X-ray photoelectron spectroscopy. The results are shown in Table 3.
- Reaction temperature (substrate temperature): 150-300 ° C
- reactive gas hydrogen, steam, or ozone
- (1) The vapor of the raw material for chemical vapor deposition vaporized under the conditions of the raw material container heating temperature of 50 to 150 ° C. and the pressure inside the raw material container of 100 Pa is introduced and deposited at a system pressure of 100 Pa for 30 seconds.
- the unreacted raw material is removed by argon purging for 10 seconds.
- a reactive gas is introduced and reacted at a system pressure of 100 Pa for 1 to 30 seconds.
- (4) The unreacted raw material is removed by argon purging for 10 to 30 seconds.
- the carbon content in the metal thin film obtained by the ALD method was 5 atm% or more in Comparative Examples 1 to 4, whereas it was less than the detection limit of 0.1 atm% in Examples 6 to 10. That is, it was shown that a high-quality metal thin film and a metal oxide film thin film can be obtained by using the alkoxide compound of the present invention. Further, the film thickness of the obtained thin film is 20 nm or less in Comparative Examples 1 to 4, whereas it is 30 nm or more in Examples 6 to 10, and the metal thin film with high productivity by using the alkoxide compound of the present invention. And a metal oxide film thin film was obtained. From the above results, it was shown that the alkoxide compound of the present invention is excellent as a raw material for chemical vapor deposition.
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Abstract
Description
また、気化工程を伴わないMOD法による薄膜の製造方法に用いる場合には、R1~R6及びMは、使用される溶媒に対する溶解性、薄膜形成反応等に応じて、任意に選択することができる。
なお、本発明の所望の効果を奏する観点から、No.4、No.40、No.76、No.109及びNo.110のアルコキシド化合物が好ましく、No.4、No.40、No.76及びNo.110のアルコキシド化合物がより好ましい。
下記の実施例1~5に、アルコキシド化合物の製造結果を示す。
100mlの四つ口フラスコに、水素化ナトリウム(0.24g、10.0mmol)を脱水THF(20ml)に室温にて溶解させる。この溶液に3-(エチルメチルアミノ)―1,1,1―トリフルオロプロパン-2-オール(1.71g、10.0mmol)を添加し、85℃で1時間撹拌し、その後室温で17時間撹拌させる。この溶液を塩化ヘキサアンミンニッケル(II)に滴下し、85℃にて3時間撹拌し、その後室温で15時間撹拌させる。微減圧下、オイルバス70℃にて溶媒を留去する。脱水ヘキサン20mlを加えて室温で撹拌させる。G4ボールフィルタにて不活性雰囲気下でろ過を実施し、黒褐色の液体を得る。微減圧下オイルバス60℃にて脱溶媒を実施する。その後、フラスコ内に残った茶色固体を減圧下(20~30Pa)で蒸留精製し、留出分として茶色結晶の化合物No.4を1.55g(3.88mmol,収率78%)得た。
(1)元素分析(金属分析:ICP-AES)
C:36.2質量%、H:5.4質量%、F:28.5質量%、N:7.0質量%、Ni:14.9質量%、O:8.0質量%
(理論値;C:36.1質量%、H:5.6質量%、F:28.6質量%、N:7.0質量%、Ni:14.7質量%、O:8.0質量%)
(2)構造分析(単結晶X線解析)
結晶格子サイズ:0.28mm×0.27mm×0.21mm
結晶系:単斜晶系
(非対称単位中に分子2個,R1=0.0669,wR2=0.1911)
格子パラメータ:
a=5.837Å
b=8.063Å
c=17.49Å
β=92.655°
V=822Å3
100mlの四つ口フラスコに、スズビストリメチルシリルアミド錯体(1.92g、4.36mmol)を脱水トルエン(30ml)に室温にて溶解させる。この溶液に3-(エチルメチルアミノ)-1,1,1-トリフルオロプロパン-2-オール(1.49g、8.72mmol)を添加し、室温で22時間撹拌させる。微減圧下、オイルバス100℃にて溶媒を留去する。その後、フラスコ内に残った紫色粘性液体を減圧下(20~30Pa)で蒸留精製し、留出分として白色結晶の化合物No.40を1.35g(2.94mmol,収率68%)得た。
(1)元素分析(金属分析:ICP-AES)
C:31.6質量%、H:4.6質量%、F:24.9質量%、N:5.9質量%、Sn:26.1質量%、O:6.9質量%
(理論値;C:31.4質量%、H:4.8質量%、F:24.8質量%、N:6.1質量%、Sn:25.9質量%、O:7.0質量%)
(2)1H-NMR(重ベンゼン)
4.27ppm(s、2H)、2.38-1.95ppm(m、8H)、1.53ppm(s、6H)、0.81ppm(t、J=6.8Hz、6H)
100mlの四つ口フラスコに、室温にて銅(II)メトキシド錯体0.60g(6.3mmol)と脱水トルエン20mlを加え、3-(エチルメチルアミノ)-1,1,1-トリフルオロプロパン―2-オール(2.2g、13mmol)を氷冷下で滴下し、室温で20時間撹拌を行った。オイルバス70~90℃、微減圧にて副生するメタノール及びトルエン溶媒を留去した。その後、フラスコ内に残った紫色固体を減圧下(40Pa)で昇華精製し、揮発分として紫色固体の化合物No.110を2.0g(5.0mmol,収率79%)得た。
(1)元素分析(金属分析:ICP-AES)
C:35.6質量%、H:5.4質量%、F:28.2質量%、N:7.1質量%、Cu:15.9質量%、O:7.8質量%
(理論値;C:35.7質量%、H:5.5質量%、F:28.2質量%、N:7.0質量%、Cu:15.7質量%、O:7.9質量%)
(2)構造分析(単結晶X線解析)
結晶格子サイズ:0.15mm×0.14mm×0.11mm
結晶系:単斜晶系
(非対称単位中に分子2個,R1=0.0931,wR2=0.2671)
格子パラメータ:
a=5.866(7)Å
b=8.094(9)Å
c=17.59(2)Å
β=91.923(13)°
V=835(2)Å3
100mlの四つ口フラスコに、コバルトビストリメチルシリルアミド錯体(1.90g、5.01mmol)を脱水トルエン(30ml)に室温にて溶解させる。この溶液に3-(エチルメチルアミノ)―1,1,1―トリフルオロプロパン-2-オール(1.71g、10.0mmol)を添加し、室温で22時間撹拌させる。微減圧下、オイルバス100℃にて溶媒を留去する。その後、フラスコ内に残った紫色粘性液体を減圧下(20~30Pa)で昇華精製し、留出分として濃紫色固体の化合物No.76を0.33g(0.827mmol,収率16%)得た。
(分析値)
(1)元素分析(金属分析:ICP-AES)
C:36.2質量%、H:5.4質量%、F:28.6質量%、N:7.1質量%、Co:14.9質量%、O:7.8質量%
(理論値;C:36.1質量%、H:5.6質量%、F:28.5質量%、N:7.0質量%、Co:14.8質量%、O:8.0質量%)
(2)構造分析(ATR法:FT-IR)
ν=425.80(m),480.99(m),522.23(m),587.55(w),618.01(m),640.43(m),692.77(m),793.96(m),851.63(m),862.70(m),916.91(m),1019.39(m),1052.74(m),1080.08(s),1100.28(s),1136.77(m),1178.03(m),1266.04(m),1279.58(m),1309.33(w),1381.41(w),1455.30(w),2826.25(w),2872.25(w),2922.69(w),2986.57(w)cm-1
100mlの四つ口フラスコに、室温にて銅(II)メトキシド錯体0.60g(6.3mmol)と脱水トルエン20mlを加え、3-(ジメチルアミノ)-1,1,1-トリフルオロプロパン―2-オール(2.0g、13mmol)を氷冷下で滴下し、室温で20時間撹拌を行った。オイルバス70~90℃、微減圧にて副生するメタノール及びトルエン溶媒を留去した。その後、フラスコ内に残った紫色固体を減圧下(40Pa)で昇華精製し、揮発分として紫色固体の化合物No.109を1.4g(3.7mmol,収率59%)得た。
(1)元素分析(金属分析:ICP-AES)
C:32.2質量%、H:4.5質量%、F:30.1質量%、N:7.4質量%、Cu:17.2質量%、O:8.6質量%
(理論値;C:32.0質量%、H:4.8質量%、F:30.3質量%、N:7.5質量%、Cu:16.9質量%、O:8.5質量%)
(2)構造分析(単結晶X線解析)
結晶格子サイズ:0.31mm×0.18mm×0.16mm
結晶系:単斜晶系
(非対称単位中に分子2個,R1=0.0834,wR2=0.2527)
格子パラメータ:
a=5.771(10)Å
b=10.64(2)Å
c=12.07(2)Å
β=93.28(3)°
γ=63.91°
V=740(3)Å3
実施例1~4で得られた本発明の化合物及び下記の比較化合物1~4について、以下の熱安定性評価を行った。なお、下記比較化合物1~4において、「Me」はメチル基を表し、「Et」はエチル基を表し、「tBu」は第三ブチル基を表す。
(熱安定性評価)
DSC測定装置を用いて、熱分解開始温度を測定した。熱分解開始温度が高いものは熱安定性が高く、薄膜形成用原料として好ましいと判断することができる。結果を表1に示す。
実施例1~3で得られた本発明の化合物及び比較化合物1~3について、以下の蒸気圧評価を行った。
(蒸気圧評価)
TG-DTAを用いて、常圧下、Ar流量:100mL/分、昇温速度10℃/分、走査温度範囲を30℃~600℃として測定し、試験化合物の重量が50質量%減少した時の温度(℃)を「常圧TG-DTA50質量%減少時の温度(℃)」として評価した。なお、銅化合物については、比較化合物3が熱分解したため、別途、10Torr減圧下、Ar流量:50mL/分、昇温速度10℃/分、走査温度範囲を30℃~600℃として測定し、試験化合物の重量が50質量%減少した時の温度(℃)を「減圧TG-DTA50質量%減少時の温度(℃)」として評価した。「常圧TG-DTA50質量%減少時の温度(℃)」又は「減圧TG-DTA50質量%減少時の温度(℃)」が低いものは蒸気圧が大きく、薄膜形成用原料として好ましいと判断することができる。結果を表2に示す。
実施例1~5で得られた本発明の化合物、比較化合物1~4を化学気相成長用原料とし、図1に示すALD装置を用いて以下の条件のALD法により、シリコン基板上に金属薄膜及び金属酸化物薄膜を製造した。得られた薄膜について、X線反射率法及び分光エリプソメトリによる膜厚測定、X線回折法により薄膜の化合物の確認及びX線光電子分光法による薄膜中の炭素含有量の測定を行った。結果を表3に示す。
反応温度(基板温度):150~300℃、反応性ガス:水素、水蒸気、またはオゾン
(工程)
下記(1)~(4)からなる一連の工程を1サイクルとして、1000サイクル繰り返した。
(1)原料容器加熱温度50~150℃、原料容器内圧力100Paの条件で気化させた化学気相成長用原料の蒸気を導入し、系圧100Paで30秒間堆積させる。
(2)10秒間のアルゴンパージにより、未反応原料を除去する。
(3)反応性ガスを導入し、系圧力100Paで1~30秒間反応させる。
(4)10~30秒間のアルゴンパージにより、未反応原料を除去する。
Claims (8)
- Mが、銅原子、コバルト原子、ニッケル原子、錫原子、亜鉛原子、イットリウム原子、鉄原子、インジウム原子、ガリウム原子、アルミニウム原子、チタン原子、ゲルマニウム原子、ジルコニウム原子、ハフニウム原子又はケイ素原子である、請求項1に記載のアルコキシド化合物。
- R5は、水素原子、フルオロ基、炭素原子数1~5のフッ素原子含有アルキル基又は炭素原子数1~5のアルキル基を表す、請求項1又は2に記載のアルコキシド化合物。
- R6は、フルオロ基、又は炭素原子数1~5のフッ素原子含有アルキル基を表す、請求項1~3のいずれか1項に記載のアルコキシド化合物。
- R6のフッ素原子を含有する基がトリフルオロメチル基、2,2,2-トリフルオロエチル基又は3,3,3-トリフルオロプロピル基である、請求項1~4のいずれか1項に記載のアルコキシド化合物。
- 請求項1~5いずれか一項に記載のアルコキシド化合物を含有する薄膜形成用原料。
- 基体の表面に金属原子又は半金属原子を含有する薄膜の製造方法であって、
請求項6に記載の薄膜形成用原料を気化させる工程と、気化された前記アルコキシド化合物を含有する蒸気を処理雰囲気に導入する工程と、該化合物を分解及び/又は化学反応させて前記基体の表面に金属原子又は半金属原子を含有する薄膜を形成させる工程と、を含む薄膜の製造方法。 - 基体の表面に金属原子又は半金属原子を含有する薄膜を製造するための、請求項1~5のいずれか1項に記載のアルコキシド化合物の使用。
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EP21837909.7A EP4180417A4 (en) | 2020-07-09 | 2021-06-25 | ALKOXIDE COMPOUND, THIN FILM-FORMING MATERIAL AND METHOD FOR PRODUCING A THIN FILM |
IL299716A IL299716A (en) | 2020-07-09 | 2021-06-25 | Alkoxide compound, raw material forming a thin layer and method for producing a thin layer |
US18/014,371 US20230304154A1 (en) | 2020-07-09 | 2021-06-25 | Alkoxide compound, thin-film forming raw material, and method of producing thin-film |
JP2022535019A JPWO2022009695A1 (ja) | 2020-07-09 | 2021-06-25 | |
KR1020237002871A KR20230037573A (ko) | 2020-07-09 | 2021-06-25 | 알콕시드 화합물, 박막 형성용 원료 및 박막의 제조 방법 |
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WO2024038602A1 (ja) * | 2022-08-19 | 2024-02-22 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
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IL299716A (en) | 2023-03-01 |
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