JP2008545277A - アルカリ土類金属β‐ジケチミナート前駆体を用いた原子層堆積 - Google Patents
アルカリ土類金属β‐ジケチミナート前駆体を用いた原子層堆積 Download PDFInfo
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- JP2008545277A JP2008545277A JP2008519486A JP2008519486A JP2008545277A JP 2008545277 A JP2008545277 A JP 2008545277A JP 2008519486 A JP2008519486 A JP 2008519486A JP 2008519486 A JP2008519486 A JP 2008519486A JP 2008545277 A JP2008545277 A JP 2008545277A
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- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 12
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 125000004964 sulfoalkyl group Chemical group 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- YONPGGFAJWQGJC-UHFFFAOYSA-K titanium(iii) chloride Chemical compound Cl[Ti](Cl)Cl YONPGGFAJWQGJC-UHFFFAOYSA-K 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
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- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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Abstract
【選択図】図1
Description
(構造式I):
(構造式I):
(構造式I):
(構造式I):
(構造式I):
(構造式I):
<定義>
(構造式I):
Claims (51)
- 基板上に金属含有層を形成する方法であり、前記方法は、
基板を用意することと、
(構造式I)の化合物を一種以上含む気体を用意することと、
(構造式I)
各Lは独立にアニオン配位子であり、
各Yは独立に中性配位子であり、
nは金属の原子価状態をあらわし、
zは0から10であり、
xは1からnであり、
各R1、R2、R3、R4、およびR5は独立に水素または有機基であることを特徴とし、
一種類以上の反応気体を用意することと、
前記構造式Iの化合物を一種以上含む前記気体を前記基板に接触させ、複数の堆積サイクルを含む原子層堆積工程を用いて、前記基板の一つ以上の表面上に金属含有層を形成すること、
を含む、金属含有層の形成方法。 - 各R1、R2、R3、R4、およびR5が独立に水素または1から10の炭素原子を持つ有機基であることを特徴とする、請求項1の方法。
- R1=R5、かつR2=R4である請求項1の方法。
- R1=R5=イソプロピル基である請求項3の方法。
- R1=R5=tert-ブチル基である請求項3の方法。
- R2=R4=メチル基、かつR3=Hである請求項3の方法。
- R1=R5=イソプロピル基である請求項6の方法。
- R1=R5=tert-ブチル基である請求項6の方法。
- 以下の一つ以上があてはまる請求項1の方法であり、R1がR5と異なるか、あるいはR2がR4と異なる。
- R1=イソプロピル基、かつR5=tert-ブチル基である請求項9の方法。
- R2=R4=メチル基、かつR3=Hである請求項9の方法。
- R1=イソプロピル基、かつR5=tert-ブチル基である請求項11の方法。
- ここで一つ以上のLは、ハロゲン化物、アルコキシド基、アミド基、メルカプチド基、シアン化物、アルキル基、アミジナート基、グアニジナート基、イソウレアート基、β‐ジケトナート基、β‐イミノケトナート基、β‐ジケチミナート基、およびそれらの組み合わせから成る群から独立に選択されることを特徴とする、請求項1の方法。
- 前記一つ以上のLが、構造式Iに示したβ‐ジケチミナート配位子と同じ構造を持つβ‐ジケチミナート基であることを特徴とする、請求項13の方法。
- 前記一つ以上のLが、構造式Iに示したβ‐ジケチミナート配位子と異なる構造を持つβ‐ジケチミナート基であることを特徴とする、請求項13の方法。
- 一つ以上のYが、カルボニル基、ニトロシル基、アンモニア、アミン、窒素、ホスフィン、アルコール、水、テトラヒドロフラン、およびそれらの組み合わせから成る群から選択されることを特徴とする、請求項1の方法。
- 前記一種以上の反応気体が、酸素、水蒸気、オゾン、アルコール、酸化窒素、酸化硫黄、水素、硫化水素、セレン化水素、テルル化水素、過酸化水素、アンモニア、有機アミン、シラン、ジシラン、高級シラン、ジボラン、プラズマ、空気、およびそれらの組み合わせから成る群から選択されることを特徴とする、請求項1の方法。
- 構造式Iと異なる一種以上の金属含有化合物を含む気体を用意することと、前記構造式Iと異なる一種以上の金属含有化合物を含む前記気体を前記基板に接触させることをさらに含む、請求項1の方法。
- 前記構造式Iと異なる一種以上の金属含有化合物の金属が、Ti、Ta、Bi、Hf、Zr、Pb、Nb、Mg、Al、およびそれらの組み合わせから成る群から選択されることを特徴とする、請求項18の方法。
- 前記金属含有層が、BaTiO3、SrTiO3、CaTiO3、(Ba,Sr)TiO3、SrTa2O6、SrBi2Ta2O9(SBT)、SrHfO3、SrZrO3、BaHfO3、BaZrO3、(Pb,Ba)Nb2O6、(Sr,Ba)Nb2O6、Pb[(Sc,Nb)0.575Ti0.425]O3(PSNT)、La2O3、Y2O3、LaAlO3、YAlO3、Pr2O3、Ba(Li,Nb)1/4O3-PbTiO3、Ba(0.6)Sr(0.4)TiO3-MgO、およびそれらの組み合わせから成る群から選択されることを特徴とする、請求項1の方法。
- 半導体構造の製造方法であり、前記方法は、
半導体基板またはアセンブリ基板を用意することと、
(構造式I)の化合物を一種以上含む気体を用意することと、
(構造式I):
各Lは独立にアニオン配位子であり、
各Yは独立に中性配位子であり、
nは金属の原子価状態をあらわし、
zは0から10であり、
xは1からnであり、
各R1、R2、R3、R4、およびR5は独立に水素または有機基であることを特徴とし、
構造式Iと異なる一種以上の金属含有化合物を含む気体を用意することと、
前記構造式Iの化合物を一種以上含む前記気体と、前記構造式Iと異なる一種以上の金属含有化合物を含む前記気体とを、前記半導体基板またはアセンブリ基板に向け、複数の堆積サイクルを含む原子層堆積工程を用いて前記半導体基板またはアセンブリ基板の一つ以上の表面上に金属含有層を形成すること、
を含む、半導体構造の製造方法。 - 各R1、R2、R3、R4、およびR5が独立に水素または1から10の炭素原子を持つ有機基であることを特徴とする、請求項21の方法。
- 一種以上の反応気体を用意することをさらに含む、請求項21の方法。
- 前記一種以上の反応気体が、酸素、水蒸気、オゾン、アルコール、酸化窒素、酸化硫黄、水素、硫化水素、セレン化水素、テルル化水素、過酸化水素、アンモニア、有機アミン、シラン、ジシラン、高級シラン、ジボラン、プラズマ、空気、およびそれらの組み合わせから成る群から選択されることを特徴とする、請求項23の方法。
- 前記一種以上の反応気体がオゾンおよび酸素から成る群から選択される、請求項23の方法。
- 前記金属含有層が金属酸化物層である、請求項21の方法。
- 前記金属含有層が1Åから500Åの厚さを持つ、請求項21の方法。
- 前記金属含有層が誘電体層である、請求項21の方法。
- 前記構造式Iと異なる一種以上の金属含有化合物の金属が、Ti、Ta、Bi、Hf、Zr、Pb、Nb、Mg、Al、およびそれらの組み合わせから成る群から選択されることを特徴とする、請求項21の方法。
- 前記金属含有層が、BaTiO3、SrTiO3、CaTiO3、(Ba,Sr)TiO3、SrTa2O6、SrBi2Ta2O9(SBT)、SrHfO3、SrZrO3、BaHfO3、BaZrO3、(Pb,Ba)Nb2O6、(Sr,Ba)Nb2O6、Ba(Li,Nb)1/4O3-PbTiO3、Ba(0.6)Sr(0.4)TiO3-MgO、およびそれらの組み合わせから成る群から選択されることを特徴とする、請求項29の方法。
- 前記原子層堆積工程の間に、前記構造式Iの化合物を一種以上含む前記気体と、前記構造式Iと異なる一種以上の金属含有化合物を含む前記気体とを、各堆積サイクルの間に交互に導入することによって、前記金属含有層が形成されることを特徴とする、請求項21の方法。
- 半導体構造の製造方法であり、前記方法は、
半導体基板またはアセンブリ基板を原子層堆積室の内部に用意することと、
(構造式I)の化合物を一種以上含む気体を用意することと、
(構造式I):
各Lは独立にアニオン配位子であり、
各Yは独立に中性配位子であり、
nは金属の原子価状態をあらわし、
zは0から10であり、
xは1からnであり、
各R1、R2、R3、R4、およびR5は独立に水素または有機基であることを特徴とし、
構造式Iと異なる一種以上の金属含有化合物を含む気体を用意することと、
前記構造式Iの化合物を一種以上含む前記気体を前記半導体基板またはアセンブリ基板に向け、かつ、前記一種以上の化合物を前記半導体基板またはアセンブリ基板の一つ以上の表面に化学吸着させることと、
前記構造式Iと異なる一種以上の金属含有化合物を含む前記気体を前記半導体基板またはアセンブリ基板に向け、かつ、前記構造式Iと異なる一種以上の化合物を前記半導体基板またはアセンブリ基板の一つ以上の表面に化学吸着させ、前記半導体基板またはアセンブリ基板の一つ以上の表面上に金属含有層を形成すること
を含む、半導体構造の製造方法。 - 各R1、R2、R3、R4、およびR5が独立に水素または1から10の炭素原子を持つ有機基であることを特徴とする、請求項32の方法。
- 一種以上の反応気体をさらに含む、請求項32の方法。
- 前記構造式Iの化合物を一種以上含む前記気体を前記半導体基板またはアセンブリ基板に向け、かつ前記構造式Iと異なる一種以上の金属含有化合物を含む前記気体を前記半導体基板またはアセンブリ基板に向けることが、一回以上繰り返されることを特徴とする、請求項32の方法。
- 前記半導体基板またはアセンブリ基板の温度が25℃から400℃である、請求項32の方法。
- 前記半導体基板またはアセンブリ基板を含む前記原子層堆積室が、10-8トール(1.3 x 10-6 Pa)から10トール(1.3 x 103 Pa)の圧力を持つことを特徴とする、請求項32の方法。
- 前記半導体基板またはアセンブリ基板上への前記化合物の化学吸着の後、前記構造式Iの化合物を一種以上含む過剰気体を、前記堆積室からパージすることをさらに含む、請求項32の方法。
- パージが不活性ガスを用いたパージを含む、請求項38の方法。
- 前記不活性ガスが窒素、ヘリウム、アルゴン、およびそれらの混合物から成る群から選択されることを特徴とする、請求項39の方法。
- 記憶デバイス構造の製造方法であり、前記方法は、
その上に第一電極を有する基板を用意することと、
(構造式I)の化合物を一種以上含む気体を用意することと、
(構造式I)
各Lは独立にアニオン配位子であり、
各Yは独立に中性配位子であり、
nは金属の原子価状態をあらわし、
zは0から10であり、
xは1からnであり、
各R1、R2、R3、R4、およびR5は独立に水素または有機基であり、
前記構造式Iの化合物を一種以上含む前記気体を前記基板に接触させ、前記化合物を前記基板の前記第一電極上に化学吸着させることと、
一種以上の反応気体を用意することと、
前記一種以上の反応気体を、その上に前記化合物を化学吸着させた前記基板に接触させ、前記基板の前記第一電極上に誘電体層を形成することと、
前記誘電体層上に第二電極を形成すること
を含む、記憶装置構造の製造方法。 - 各R1、R2、R3、R4、およびR5が独立に水素または1から10の炭素原子を持つ有機基であることを特徴とする、請求項41の方法。
- 前記構造式Iの化合物を一種以上含む前記気体が非反応性ガスをさらに含む、請求項41の方法。
- 前記非反応性ガスが窒素、ヘリウム、アルゴン、およびそれらの混合物から成る群から選択される、請求項43の方法。
- 構造式Iと異なる一種以上の金属含有化合物を含む気体を用意することと、前記構造式Iと異なる一種以上の金属含有化合物を含む前記気体を前記基盤に接触させることをさらに含む、請求項41の方法。
- 原子層蒸着システムであり、
その中に基板を配置した堆積室と、
(構造式I)の化合物を一種以上含む一つ以上の容器を含み、
(構造式I):
各Lは独立にアニオン配位子であり、
各Yは独立に中性配位子であり、
nは金属の原子価状態をあらわし、
zは0から10であり、
xは1からnであり、
各R1、R2、R3、R4、およびR5は独立に水素または有機基であることを特徴とする、
原子層蒸着システム。 - 各R1、R2、R3、R4、およびR5が独立に水素または1から10の炭素原子を持つ有機基であることを特徴とする、請求項46のシステム。
- さらに一種以上の反応気体源を一つ以上含む、請求項46のシステム。
- さらに不活性ガス源を一つ以上含む、請求項46のシステム。
- さらに構造式Iと異なる一種以上の金属含有化合物を含む容器を一つ以上含む、請求項46のシステム。
- 前記構造式Iと異なる一種以上の金属含有化合物の金属が、Ti、Ta、Bi、Hf、Zr、Pb、Nb、Mg、Alおよびそれらの組み合わせから成る群から選択されることを特徴とする、請求項50のシステム。
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