JP2008545271A - クリティカルディメンション低減およびピッチ低減のためのシステムおよび方法 - Google Patents

クリティカルディメンション低減およびピッチ低減のためのシステムおよび方法 Download PDF

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Publication number
JP2008545271A
JP2008545271A JP2008519338A JP2008519338A JP2008545271A JP 2008545271 A JP2008545271 A JP 2008545271A JP 2008519338 A JP2008519338 A JP 2008519338A JP 2008519338 A JP2008519338 A JP 2008519338A JP 2008545271 A JP2008545271 A JP 2008545271A
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JP
Japan
Prior art keywords
mask
profile
shape
forming
critical dimension
Prior art date
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Pending
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JP2008519338A
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English (en)
Japanese (ja)
Inventor
チャラタン・ロバート
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Lam Research Corp
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Lam Research Corp
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Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2008545271A publication Critical patent/JP2008545271A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Paper (AREA)
  • Printing Plates And Materials Therefor (AREA)
JP2008519338A 2005-06-30 2006-06-12 クリティカルディメンション低減およびピッチ低減のためのシステムおよび方法 Pending JP2008545271A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/173,733 US7427458B2 (en) 2005-06-30 2005-06-30 System and method for critical dimension reduction and pitch reduction
PCT/US2006/022890 WO2007005204A2 (en) 2005-06-30 2006-06-12 System and method for critical dimension reduction and pitch reduction

Publications (1)

Publication Number Publication Date
JP2008545271A true JP2008545271A (ja) 2008-12-11

Family

ID=37590177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008519338A Pending JP2008545271A (ja) 2005-06-30 2006-06-12 クリティカルディメンション低減およびピッチ低減のためのシステムおよび方法

Country Status (7)

Country Link
US (1) US7427458B2 (zh)
JP (1) JP2008545271A (zh)
KR (1) KR101339542B1 (zh)
CN (2) CN101213488B (zh)
MY (1) MY139835A (zh)
TW (1) TWI348071B (zh)
WO (1) WO2007005204A2 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7449348B1 (en) * 2004-06-02 2008-11-11 Advanced Micro Devices, Inc. Feedback control of imprint mask feature profile using scatterometry and spacer etchback
US8529728B2 (en) * 2005-06-30 2013-09-10 Lam Research Corporation System and method for critical dimension reduction and pitch reduction
US7682516B2 (en) * 2005-10-05 2010-03-23 Lam Research Corporation Vertical profile fixing
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
CN105023835B (zh) * 2015-06-17 2019-04-02 泰科天润半导体科技（北京）有限公司 介质掩膜的制造方法、利用该掩膜刻蚀或离子注入的方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01181422A (ja) * 1988-01-08 1989-07-19 Dainippon Printing Co Ltd パターン形成方法
JPH01253922A (ja) * 1988-04-01 1989-10-11 Matsushita Electric Ind Co Ltd レジスト処理方法
JPH0219852A (ja) * 1988-07-07 1990-01-23 Matsushita Electric Ind Co Ltd レジスト処理方法
JPH065560A (ja) * 1992-06-16 1994-01-14 Sony Corp 半導体装置の製造方法
JP2000173996A (ja) * 1998-12-03 2000-06-23 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2000232047A (ja) * 1999-02-09 2000-08-22 Nikon Corp 散乱ステンシル型レチクルの修正方法
JP2002237440A (ja) * 2001-02-08 2002-08-23 Semiconductor Leading Edge Technologies Inc レジストパターン形成方法及び微細パターン形成方法
JP2007503720A (ja) * 2003-08-26 2007-02-22 ラム　リサーチ　コーポレーション フィーチャ微小寸法の低減

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674647A (en) * 1992-11-21 1997-10-07 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
US5506080A (en) * 1995-01-23 1996-04-09 Internation Business Machines Corp. Lithographic mask repair and fabrication method
US6415413B1 (en) * 1998-06-18 2002-07-02 Globespanvirata, Inc. Configurable Reed-Solomon controller and method
JP3848006B2 (ja) 1999-03-15 2006-11-22 株式会社東芝 マスク欠陥修正方法
US6342428B1 (en) * 1999-10-04 2002-01-29 Philips Electronics North America Corp. Method for a consistent shallow trench etch profile
US6415431B1 (en) 2000-02-18 2002-07-02 International Business Machines Corporation Repair of phase shift materials to enhance adhesion
EP1361478B1 (en) * 2001-02-15 2009-12-30 Dai Nippon Printing Co., Ltd. Method of manufacturing phase shift mask and phase shift mask
DE10228807B4 (de) * 2002-06-27 2009-07-23 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung von Mikrostrukturelementen

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01181422A (ja) * 1988-01-08 1989-07-19 Dainippon Printing Co Ltd パターン形成方法
JPH01253922A (ja) * 1988-04-01 1989-10-11 Matsushita Electric Ind Co Ltd レジスト処理方法
JPH0219852A (ja) * 1988-07-07 1990-01-23 Matsushita Electric Ind Co Ltd レジスト処理方法
JPH065560A (ja) * 1992-06-16 1994-01-14 Sony Corp 半導体装置の製造方法
JP2000173996A (ja) * 1998-12-03 2000-06-23 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2000232047A (ja) * 1999-02-09 2000-08-22 Nikon Corp 散乱ステンシル型レチクルの修正方法
JP2002237440A (ja) * 2001-02-08 2002-08-23 Semiconductor Leading Edge Technologies Inc レジストパターン形成方法及び微細パターン形成方法
JP2007503720A (ja) * 2003-08-26 2007-02-22 ラム　リサーチ　コーポレーション フィーチャ微小寸法の低減

Also Published As

Publication number Publication date
US20070004217A1 (en) 2007-01-04
KR20080023228A (ko) 2008-03-12
WO2007005204A3 (en) 2007-11-01
TW200710564A (en) 2007-03-16
KR101339542B1 (ko) 2013-12-10
TWI348071B (en) 2011-09-01
CN101213488A (zh) 2008-07-02
CN102969230A (zh) 2013-03-13
US7427458B2 (en) 2008-09-23
MY139835A (en) 2009-10-30
WO2007005204A2 (en) 2007-01-11
CN101213488B (zh) 2012-11-07

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