JP2008544574A - Ｅｕｖ光源集光器の侵食の緩和 - Google Patents

Ｅｕｖ光源集光器の侵食の緩和 Download PDF

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Publication number
JP2008544574A
JP2008544574A JP2008519423A JP2008519423A JP2008544574A JP 2008544574 A JP2008544574 A JP 2008544574A JP 2008519423 A JP2008519423 A JP 2008519423A JP 2008519423 A JP2008519423 A JP 2008519423A JP 2008544574 A JP2008544574 A JP 2008544574A
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Prior art keywords
concentrator
replacement
euv
displacement
collector
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Pending
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JP2008519423A
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Japanese (ja)
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JP2008544574A5 (enExample
Inventor
ウィリアム エヌ パートロ
アレクサンダー アイ アーショフ
イゴー ヴィー フォーメンコフ
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サイマー インコーポレイテッド
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Priority claimed from US11/174,442 external-priority patent/US7196342B2/en
Priority claimed from US11/238,828 external-priority patent/US7180083B2/en
Application filed by サイマー インコーポレイテッド filed Critical サイマー インコーポレイテッド
Publication of JP2008544574A publication Critical patent/JP2008544574A/ja
Publication of JP2008544574A5 publication Critical patent/JP2008544574A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/0035—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state the material containing metals as principal radiation-generating components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Atmospheric Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cleaning In General (AREA)
JP2008519423A 2005-06-27 2006-06-23 Ｅｕｖ光源集光器の侵食の緩和 Pending JP2008544574A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/168,190 US7365349B2 (en) 2005-06-27 2005-06-27 EUV light source collector lifetime improvements
US11/174,442 US7196342B2 (en) 2004-03-10 2005-06-29 Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US11/238,828 US7180083B2 (en) 2005-06-27 2005-09-28 EUV light source collector erosion mitigation
PCT/US2006/024446 WO2007002374A2 (en) 2005-06-27 2006-06-23 Euv light source collector erosion mitigation

Publications (2)

Publication Number Publication Date
JP2008544574A true JP2008544574A (ja) 2008-12-04
JP2008544574A5 JP2008544574A5 (enExample) 2009-08-06

Family

ID=37595868

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2008519423A Pending JP2008544574A (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器の侵食の緩和
JP2008519425A Expired - Fee Related JP5091130B2 (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器寿命の改善
JP2008519459A Expired - Fee Related JP5156625B2 (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器の侵食の緩和

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2008519425A Expired - Fee Related JP5091130B2 (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器寿命の改善
JP2008519459A Expired - Fee Related JP5156625B2 (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器の侵食の緩和

Country Status (4)

Country Link
US (1) US7365349B2 (enExample)
EP (1) EP1899697B1 (enExample)
JP (3) JP2008544574A (enExample)
WO (1) WO2007002386A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010532554A (ja) * 2007-06-12 2010-10-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Ｅｕｖ光学部品に低下した反射率を高めるための処理をその場で施す光学装置及び方法
KR101052922B1 (ko) * 2008-12-22 2011-07-29 주식회사 하이닉스반도체 극자외선 광원 장치

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JP4807560B2 (ja) * 2005-11-04 2011-11-02 国立大学法人 宮崎大学 極端紫外光発生方法および極端紫外光発生装置
NL1032674C2 (nl) * 2006-10-13 2008-04-15 Stichting Fund Ond Material Stralingsbron voor elektromagnetische straling met een golflengte in het extreem ultraviolet (XUV) golflengtegebied.
US7696492B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
JP5086664B2 (ja) * 2007-03-02 2012-11-28 ギガフォトン株式会社 極端紫外光源装置
JP5001055B2 (ja) * 2007-04-20 2012-08-15 株式会社小松製作所 極端紫外光源装置
US8901521B2 (en) * 2007-08-23 2014-12-02 Asml Netherlands B.V. Module and method for producing extreme ultraviolet radiation
KR101495208B1 (ko) * 2007-08-23 2015-02-25 에이에스엠엘 네델란즈 비.브이. 극자외 방사선을 생성하는 방법 및 모듈
US7812329B2 (en) * 2007-12-14 2010-10-12 Cymer, Inc. System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
US7655925B2 (en) * 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
US7760341B2 (en) * 2007-09-04 2010-07-20 Sematech, Inc. Systems and methods for in-situ reflectivity degradation monitoring of optical collectors used in extreme ultraviolet (EUV) lithography processes
KR20140097574A (ko) 2007-11-06 2014-08-06 칼 짜이스 에스엠티 게엠베하 광학면으로부터 오염층을 제거하는 방법, 세정 가스를 생성하는 방법 및 대응하는 세정 및 세정 가스 생성 장치들
ATE528694T1 (de) * 2008-07-18 2011-10-15 Koninkl Philips Electronics Nv Vorrichtung zur erzeugung von extremer uv- strahlung mit einem kontaminationsfänger und verfahren zur reinigung von zinn in einer solchen vorrichtung
US8519366B2 (en) * 2008-08-06 2013-08-27 Cymer, Inc. Debris protection system having a magnetic field for an EUV light source
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
JP5687488B2 (ja) 2010-02-22 2015-03-18 ギガフォトン株式会社 極端紫外光生成装置
US8368039B2 (en) 2010-04-05 2013-02-05 Cymer, Inc. EUV light source glint reduction system
US9029797B2 (en) * 2013-07-25 2015-05-12 Agilent Technologies, Inc. Plasma-based photon source, ion source, and related systems and methods

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