JP2008543008A5 - - Google Patents

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Publication number
JP2008543008A5
JP2008543008A5 JP2008514166A JP2008514166A JP2008543008A5 JP 2008543008 A5 JP2008543008 A5 JP 2008543008A5 JP 2008514166 A JP2008514166 A JP 2008514166A JP 2008514166 A JP2008514166 A JP 2008514166A JP 2008543008 A5 JP2008543008 A5 JP 2008543008A5
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JP
Japan
Prior art keywords
layer
cathode
conductor
lattice
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008514166A
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English (en)
Japanese (ja)
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JP2008543008A (ja
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Publication date
Priority claimed from FR0551412A external-priority patent/FR2886284B1/fr
Application filed filed Critical
Publication of JP2008543008A publication Critical patent/JP2008543008A/ja
Publication of JP2008543008A5 publication Critical patent/JP2008543008A5/ja
Pending legal-status Critical Current

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JP2008514166A 2005-05-30 2006-05-29 放出陰極の製造方法 Pending JP2008543008A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0551412A FR2886284B1 (fr) 2005-05-30 2005-05-30 Procede de realisation de nanostructures
PCT/FR2006/050490 WO2007026086A2 (fr) 2005-05-30 2006-05-29 Procede de fabrication d'une cathode emissive

Publications (2)

Publication Number Publication Date
JP2008543008A JP2008543008A (ja) 2008-11-27
JP2008543008A5 true JP2008543008A5 (https=) 2012-01-05

Family

ID=35520555

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008514165A Active JP5247438B2 (ja) 2005-05-30 2006-05-29 ナノ構造物の製造方法
JP2008514166A Pending JP2008543008A (ja) 2005-05-30 2006-05-29 放出陰極の製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2008514165A Active JP5247438B2 (ja) 2005-05-30 2006-05-29 ナノ構造物の製造方法

Country Status (5)

Country Link
US (2) US7993703B2 (https=)
EP (2) EP1885648B1 (https=)
JP (2) JP5247438B2 (https=)
FR (1) FR2886284B1 (https=)
WO (2) WO2007026086A2 (https=)

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JP5637687B2 (ja) 2006-12-19 2014-12-10 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングＢＡＳＦ Ｃｏａｔｉｎｇｓ ＧｍｂＨ 高い引掻耐性及び耐候性を有する被覆剤
DE102007061855A1 (de) 2007-12-19 2009-06-25 Basf Coatings Ag Beschichtungsmittel mit hoher Kratzbeständigkeit und Witterungsstabilität
DE102007061854A1 (de) 2007-12-19 2009-06-25 Basf Coatings Ag Beschichtungsmittel mit hoher Kratzbeständigkeit und Witterungsstabilität
DE102007061856A1 (de) 2007-12-19 2009-06-25 Basf Coatings Ag Beschichtungsmittel mit hoher Kratzbeständigkeit und Witterungsstabilität
JP5187689B2 (ja) * 2008-08-08 2013-04-24 学校法人 関西大学 ナノワイヤ構造体、ナノワイヤ結合体、およびその製造方法
JP5572944B2 (ja) * 2008-12-18 2014-08-20 富士通株式会社 配線構造体の製造方法及び配線構造体
DE102009024103A1 (de) 2009-06-06 2010-12-09 Basf Coatings Gmbh Beschichtungsmittel und daraus hergestellte Beschichtungen mit hoher Kratzfestigkeit und hoher Kocherstabilität
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EP2541581A1 (en) * 2011-06-29 2013-01-02 Khalid Waqas Device comprising nanostructures and method of manufacturing thereof
WO2013037951A1 (en) * 2011-09-16 2013-03-21 Danmarks Tekniske Universitet Catalyst deposition for the preparation of carbon nanotubes
CN105984862B (zh) * 2015-02-16 2018-08-28 北京大学深圳研究生院 用于生长碳纳米管的方法
JP7556246B2 (ja) 2020-09-23 2024-09-26 セイコーエプソン株式会社 発光装置、発光装置の製造方法およびプロジェクター
CN114426255B (zh) * 2020-10-28 2025-03-04 中国科学技术大学 一种微纳米结构定点缺陷掺杂的方法及nv色心传感器

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JP4083611B2 (ja) * 2003-03-25 2008-04-30 三菱電機株式会社 冷陰極電子源の製造方法
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