JP2008541426A5 - - Google Patents

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Publication number
JP2008541426A5
JP2008541426A5 JP2008510018A JP2008510018A JP2008541426A5 JP 2008541426 A5 JP2008541426 A5 JP 2008541426A5 JP 2008510018 A JP2008510018 A JP 2008510018A JP 2008510018 A JP2008510018 A JP 2008510018A JP 2008541426 A5 JP2008541426 A5 JP 2008541426A5
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JP
Japan
Prior art keywords
acid
water
composition
inorganic phosphorus
organic solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008510018A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008541426A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2006/014466 external-priority patent/WO2006121580A2/en
Publication of JP2008541426A publication Critical patent/JP2008541426A/ja
Publication of JP2008541426A5 publication Critical patent/JP2008541426A5/ja
Pending legal-status Critical Current

Links

JP2008510018A 2005-05-06 2006-04-18 エッチングおよび灰化後のフォトレジスト残渣およびバルクのフォトレジストを除去するための組成物 Pending JP2008541426A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67853405P 2005-05-06 2005-05-06
PCT/US2006/014466 WO2006121580A2 (en) 2005-05-06 2006-04-18 Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist

Publications (2)

Publication Number Publication Date
JP2008541426A JP2008541426A (ja) 2008-11-20
JP2008541426A5 true JP2008541426A5 (https=) 2009-06-04

Family

ID=36809154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008510018A Pending JP2008541426A (ja) 2005-05-06 2006-04-18 エッチングおよび灰化後のフォトレジスト残渣およびバルクのフォトレジストを除去するための組成物

Country Status (13)

Country Link
US (1) US7754668B2 (https=)
EP (1) EP1883863B1 (https=)
JP (1) JP2008541426A (https=)
KR (1) KR20080005408A (https=)
CN (1) CN101171551B (https=)
BR (1) BRPI0611377A2 (https=)
CA (1) CA2606849A1 (https=)
IL (1) IL187121A (https=)
MY (1) MY144723A (https=)
NO (1) NO20075670L (https=)
TW (1) TWI425323B (https=)
WO (1) WO2006121580A2 (https=)
ZA (1) ZA200706853B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2912151B1 (fr) * 2007-02-05 2009-05-08 Arkema France Formulation de dimethylsulfoxyde en melange avec un additif permettant d'abaisser le point de cristallisation de ce dernier, et applications de ce melange
US20110056516A1 (en) * 2007-02-28 2011-03-10 Adair Richard E Process for surface treatment of metals
US20090148335A1 (en) * 2007-02-28 2009-06-11 Adair Richard E Process for surface treatment of metals
CN101373342B (zh) * 2008-10-23 2011-03-02 江阴江化微电子材料股份有限公司 一种酸性剥离液及其制备方法
US20110253171A1 (en) * 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
US8921295B2 (en) 2010-07-23 2014-12-30 American Sterilizer Company Biodegradable concentrated neutral detergent composition
EP3480288A1 (en) * 2017-11-07 2019-05-08 Henkel AG & Co. KGaA Fluoride based cleaning composition
KR102952187B1 (ko) * 2019-06-19 2026-04-14 버슘머트리얼즈 유에스, 엘엘씨 반도체 기판용 세정 조성물
JP7692323B2 (ja) 2021-09-24 2025-06-13 富士フイルム株式会社 薬液、処理方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3138557A (en) 1961-09-05 1964-06-23 Purex Corp Ltd Composition and process for removal of coatings base on epoxy resins
TW416987B (en) 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
JP3975301B2 (ja) * 1997-08-22 2007-09-12 三菱瓦斯化学株式会社 半導体素子製造用洗浄液及びこれを用いた半導体素子 の製造方法
JP2000208467A (ja) * 1999-01-14 2000-07-28 Mitsubishi Gas Chem Co Inc 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法
JP4224652B2 (ja) * 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
JP2000284506A (ja) * 1999-03-31 2000-10-13 Sharp Corp フォトレジスト剥離剤組成物および剥離方法
US6562726B1 (en) 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
US6486108B1 (en) 2000-05-31 2002-11-26 Micron Technology, Inc. Cleaning composition useful in semiconductor integrated circuit fabrication
JP2002113431A (ja) * 2000-10-10 2002-04-16 Tokyo Electron Ltd 洗浄方法
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
CN100403169C (zh) 2001-07-13 2008-07-16 Ekc技术公司 亚砜吡咯烷酮链烷醇胺剥离和清洗组合物
JP2003177556A (ja) 2001-12-12 2003-06-27 Sharp Corp フォトレジスト剥離剤組成物および剥離方法
EP1520211A2 (en) * 2002-06-07 2005-04-06 Mallinckrodt Baker, Inc. Microelectronic cleaning compositions containing oxidizers and organic solvents
TWI309675B (en) 2002-10-22 2009-05-11 Ekc Technology Inc Aqueous phosphoric acid compositions for cleaning semiconductor devices
JP4085262B2 (ja) * 2003-01-09 2008-05-14 三菱瓦斯化学株式会社 レジスト剥離剤
US20060293199A1 (en) * 2003-06-04 2006-12-28 Kao Corporation Removing agent composition and removing/cleaning method using same

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