BRPI0611377A2 - composicões para a remocão de resìduos pós-gravacão e de fotorresistor com cinzas e fotorresistor volumétrico - Google Patents

composicões para a remocão de resìduos pós-gravacão e de fotorresistor com cinzas e fotorresistor volumétrico Download PDF

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Publication number
BRPI0611377A2
BRPI0611377A2 BRPI0611377-0A BRPI0611377A BRPI0611377A2 BR PI0611377 A2 BRPI0611377 A2 BR PI0611377A2 BR PI0611377 A BRPI0611377 A BR PI0611377A BR PI0611377 A2 BRPI0611377 A2 BR PI0611377A2
Authority
BR
Brazil
Prior art keywords
acid
composition
water
cleaning
inorganic phosphorus
Prior art date
Application number
BRPI0611377-0A
Other languages
English (en)
Portuguese (pt)
Inventor
M. Kane Sean
Original Assignee
Mallinckrodt Baker, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker, Inc. filed Critical Mallinckrodt Baker, Inc.
Publication of BRPI0611377A2 publication Critical patent/BRPI0611377A2/pt

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
BRPI0611377-0A 2005-05-06 2006-04-18 composicões para a remocão de resìduos pós-gravacão e de fotorresistor com cinzas e fotorresistor volumétrico BRPI0611377A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US67853405P 2005-05-06 2005-05-06
US60/678,534 2005-05-06
PCT/US2006/014466 WO2006121580A2 (en) 2005-05-06 2006-04-18 Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist

Publications (1)

Publication Number Publication Date
BRPI0611377A2 true BRPI0611377A2 (pt) 2010-08-31

Family

ID=36809154

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0611377-0A BRPI0611377A2 (pt) 2005-05-06 2006-04-18 composicões para a remocão de resìduos pós-gravacão e de fotorresistor com cinzas e fotorresistor volumétrico

Country Status (13)

Country Link
US (1) US7754668B2 (https=)
EP (1) EP1883863B1 (https=)
JP (1) JP2008541426A (https=)
KR (1) KR20080005408A (https=)
CN (1) CN101171551B (https=)
BR (1) BRPI0611377A2 (https=)
CA (1) CA2606849A1 (https=)
IL (1) IL187121A (https=)
MY (1) MY144723A (https=)
NO (1) NO20075670L (https=)
TW (1) TWI425323B (https=)
WO (1) WO2006121580A2 (https=)
ZA (1) ZA200706853B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2912151B1 (fr) * 2007-02-05 2009-05-08 Arkema France Formulation de dimethylsulfoxyde en melange avec un additif permettant d'abaisser le point de cristallisation de ce dernier, et applications de ce melange
US20110056516A1 (en) * 2007-02-28 2011-03-10 Adair Richard E Process for surface treatment of metals
US20090148335A1 (en) * 2007-02-28 2009-06-11 Adair Richard E Process for surface treatment of metals
CN101373342B (zh) * 2008-10-23 2011-03-02 江阴江化微电子材料股份有限公司 一种酸性剥离液及其制备方法
US20110253171A1 (en) * 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
US8921295B2 (en) 2010-07-23 2014-12-30 American Sterilizer Company Biodegradable concentrated neutral detergent composition
EP3480288A1 (en) * 2017-11-07 2019-05-08 Henkel AG & Co. KGaA Fluoride based cleaning composition
KR102952187B1 (ko) * 2019-06-19 2026-04-14 버슘머트리얼즈 유에스, 엘엘씨 반도체 기판용 세정 조성물
JP7692323B2 (ja) * 2021-09-24 2025-06-13 富士フイルム株式会社 薬液、処理方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3138557A (en) * 1961-09-05 1964-06-23 Purex Corp Ltd Composition and process for removal of coatings base on epoxy resins
TW416987B (en) * 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
JP3975301B2 (ja) * 1997-08-22 2007-09-12 三菱瓦斯化学株式会社 半導体素子製造用洗浄液及びこれを用いた半導体素子 の製造方法
JP2000208467A (ja) * 1999-01-14 2000-07-28 Mitsubishi Gas Chem Co Inc 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法
JP4224652B2 (ja) 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
JP2000284506A (ja) * 1999-03-31 2000-10-13 Sharp Corp フォトレジスト剥離剤組成物および剥離方法
US6562726B1 (en) * 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
US6486108B1 (en) * 2000-05-31 2002-11-26 Micron Technology, Inc. Cleaning composition useful in semiconductor integrated circuit fabrication
JP2002113431A (ja) * 2000-10-10 2002-04-16 Tokyo Electron Ltd 洗浄方法
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
EP1407326A1 (en) * 2001-07-13 2004-04-14 Ekc Technology, Inc. Sulfoxide pyrrolid(in)one alkanolamine stripping and cleaning composition
JP2003177556A (ja) * 2001-12-12 2003-06-27 Sharp Corp フォトレジスト剥離剤組成物および剥離方法
JP4304154B2 (ja) * 2002-06-07 2009-07-29 マリンクロッド・ベイカー・インコーポレイテッド 酸化剤および有機溶媒を含有するマイクロエレクトロニクス洗浄組成物
JP2006503972A (ja) * 2002-10-22 2006-02-02 イーケーシー テクノロジー，インコーポレイティド 半導体デバイスを洗浄するための水性リン酸組成物
JP4085262B2 (ja) * 2003-01-09 2008-05-14 三菱瓦斯化学株式会社 レジスト剥離剤
WO2004109788A1 (ja) * 2003-06-04 2004-12-16 Kao Corporation 剥離剤組成物およびこれを用いた剥離洗浄方法

Also Published As

Publication number Publication date
WO2006121580A3 (en) 2007-02-15
EP1883863B1 (en) 2014-01-22
MY144723A (en) 2011-10-31
TW200702942A (en) 2007-01-16
ZA200706853B (en) 2008-09-25
JP2008541426A (ja) 2008-11-20
WO2006121580A2 (en) 2006-11-16
TWI425323B (zh) 2014-02-01
IL187121A (en) 2013-06-27
IL187121A0 (en) 2008-02-09
CN101171551B (zh) 2012-12-26
NO20075670L (no) 2007-11-06
US7754668B2 (en) 2010-07-13
CN101171551A (zh) 2008-04-30
CA2606849A1 (en) 2006-11-16
US20080261846A1 (en) 2008-10-23
KR20080005408A (ko) 2008-01-11
EP1883863A2 (en) 2008-02-06

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Legal Events

Date Code Title Description
B25D Requested change of name of applicant approved

Owner name: AVANTOR PERFORMANCE MATERIALS, INC. (US)

Free format text: NOME ALTERADO DE: MALLINCKRODT BAKER, INC.

B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE 7A. ANUIDADE(S).

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2211 DE 21/05/2013.