CN101171551B - 用于清除蚀刻后和灰化的光致抗蚀剂残余物及大部分光致抗蚀剂的组合物 - Google Patents

用于清除蚀刻后和灰化的光致抗蚀剂残余物及大部分光致抗蚀剂的组合物 Download PDF

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Publication number
CN101171551B
CN101171551B CN2006800155059A CN200680015505A CN101171551B CN 101171551 B CN101171551 B CN 101171551B CN 2006800155059 A CN2006800155059 A CN 2006800155059A CN 200680015505 A CN200680015505 A CN 200680015505A CN 101171551 B CN101171551 B CN 101171551B
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CN
China
Prior art keywords
composition
acid
water
cleaning
phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2006800155059A
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English (en)
Chinese (zh)
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CN101171551A (zh
Inventor
肖恩·M·凯恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anwantuo Materials LLC
Original Assignee
Avantor Performance Materials LLC
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avantor Performance Materials LLC, Mallinckrodt Baker Inc filed Critical Avantor Performance Materials LLC
Publication of CN101171551A publication Critical patent/CN101171551A/zh
Application granted granted Critical
Publication of CN101171551B publication Critical patent/CN101171551B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2006800155059A 2005-05-06 2006-04-18 用于清除蚀刻后和灰化的光致抗蚀剂残余物及大部分光致抗蚀剂的组合物 Expired - Lifetime CN101171551B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US67853405P 2005-05-06 2005-05-06
US60/678,534 2005-05-06
PCT/US2006/014466 WO2006121580A2 (en) 2005-05-06 2006-04-18 Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist

Publications (2)

Publication Number Publication Date
CN101171551A CN101171551A (zh) 2008-04-30
CN101171551B true CN101171551B (zh) 2012-12-26

Family

ID=36809154

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800155059A Expired - Lifetime CN101171551B (zh) 2005-05-06 2006-04-18 用于清除蚀刻后和灰化的光致抗蚀剂残余物及大部分光致抗蚀剂的组合物

Country Status (13)

Country Link
US (1) US7754668B2 (https=)
EP (1) EP1883863B1 (https=)
JP (1) JP2008541426A (https=)
KR (1) KR20080005408A (https=)
CN (1) CN101171551B (https=)
BR (1) BRPI0611377A2 (https=)
CA (1) CA2606849A1 (https=)
IL (1) IL187121A (https=)
MY (1) MY144723A (https=)
NO (1) NO20075670L (https=)
TW (1) TWI425323B (https=)
WO (1) WO2006121580A2 (https=)
ZA (1) ZA200706853B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2912151B1 (fr) * 2007-02-05 2009-05-08 Arkema France Formulation de dimethylsulfoxyde en melange avec un additif permettant d'abaisser le point de cristallisation de ce dernier, et applications de ce melange
US20110056516A1 (en) * 2007-02-28 2011-03-10 Adair Richard E Process for surface treatment of metals
US20090148335A1 (en) * 2007-02-28 2009-06-11 Adair Richard E Process for surface treatment of metals
CN101373342B (zh) * 2008-10-23 2011-03-02 江阴江化微电子材料股份有限公司 一种酸性剥离液及其制备方法
US20110253171A1 (en) * 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
US8921295B2 (en) 2010-07-23 2014-12-30 American Sterilizer Company Biodegradable concentrated neutral detergent composition
EP3480288A1 (en) * 2017-11-07 2019-05-08 Henkel AG & Co. KGaA Fluoride based cleaning composition
KR102952187B1 (ko) * 2019-06-19 2026-04-14 버슘머트리얼즈 유에스, 엘엘씨 반도체 기판용 세정 조성물
JP7692323B2 (ja) * 2021-09-24 2025-06-13 富士フイルム株式会社 薬液、処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0827188A2 (en) * 1996-08-09 1998-03-04 Mitsubishi Gas Chemical Company, Inc. Cleaning liquid for producing semiconductor device and process for producing semiconductor device using same
EP1035446A2 (en) * 1999-03-08 2000-09-13 Mitsubishi Gas Chemical Company, Inc. Resist stripping composition and process for stripping resist
US6783695B1 (en) * 1999-06-29 2004-08-31 Micron Technology, Inc. Acid blend for removing etch residue

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3138557A (en) * 1961-09-05 1964-06-23 Purex Corp Ltd Composition and process for removal of coatings base on epoxy resins
TW416987B (en) * 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
JP3975301B2 (ja) * 1997-08-22 2007-09-12 三菱瓦斯化学株式会社 半導体素子製造用洗浄液及びこれを用いた半導体素子 の製造方法
JP2000208467A (ja) * 1999-01-14 2000-07-28 Mitsubishi Gas Chem Co Inc 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法
JP2000284506A (ja) * 1999-03-31 2000-10-13 Sharp Corp フォトレジスト剥離剤組成物および剥離方法
US6486108B1 (en) * 2000-05-31 2002-11-26 Micron Technology, Inc. Cleaning composition useful in semiconductor integrated circuit fabrication
JP2002113431A (ja) * 2000-10-10 2002-04-16 Tokyo Electron Ltd 洗浄方法
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
EP1407326A1 (en) * 2001-07-13 2004-04-14 Ekc Technology, Inc. Sulfoxide pyrrolid(in)one alkanolamine stripping and cleaning composition
JP2003177556A (ja) * 2001-12-12 2003-06-27 Sharp Corp フォトレジスト剥離剤組成物および剥離方法
JP4304154B2 (ja) * 2002-06-07 2009-07-29 マリンクロッド・ベイカー・インコーポレイテッド 酸化剤および有機溶媒を含有するマイクロエレクトロニクス洗浄組成物
JP2006503972A (ja) * 2002-10-22 2006-02-02 イーケーシー テクノロジー，インコーポレイティド 半導体デバイスを洗浄するための水性リン酸組成物
JP4085262B2 (ja) * 2003-01-09 2008-05-14 三菱瓦斯化学株式会社 レジスト剥離剤
WO2004109788A1 (ja) * 2003-06-04 2004-12-16 Kao Corporation 剥離剤組成物およびこれを用いた剥離洗浄方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0827188A2 (en) * 1996-08-09 1998-03-04 Mitsubishi Gas Chemical Company, Inc. Cleaning liquid for producing semiconductor device and process for producing semiconductor device using same
EP1035446A2 (en) * 1999-03-08 2000-09-13 Mitsubishi Gas Chemical Company, Inc. Resist stripping composition and process for stripping resist
US6783695B1 (en) * 1999-06-29 2004-08-31 Micron Technology, Inc. Acid blend for removing etch residue

Also Published As

Publication number Publication date
WO2006121580A3 (en) 2007-02-15
EP1883863B1 (en) 2014-01-22
MY144723A (en) 2011-10-31
TW200702942A (en) 2007-01-16
ZA200706853B (en) 2008-09-25
JP2008541426A (ja) 2008-11-20
WO2006121580A2 (en) 2006-11-16
TWI425323B (zh) 2014-02-01
IL187121A (en) 2013-06-27
IL187121A0 (en) 2008-02-09
BRPI0611377A2 (pt) 2010-08-31
NO20075670L (no) 2007-11-06
US7754668B2 (en) 2010-07-13
CN101171551A (zh) 2008-04-30
CA2606849A1 (en) 2006-11-16
US20080261846A1 (en) 2008-10-23
KR20080005408A (ko) 2008-01-11
EP1883863A2 (en) 2008-02-06

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Effective date of registration: 20170503

Address after: American Pennsylvania

Patentee after: Anwantuo materials limited liability company

Address before: new jersey

Patentee before: Anwantuo Spcial Materials Co., Ltd.