JP2008541393A5 - - Google Patents
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- JP2008541393A5 JP2008541393A5 JP2008511782A JP2008511782A JP2008541393A5 JP 2008541393 A5 JP2008541393 A5 JP 2008541393A5 JP 2008511782 A JP2008511782 A JP 2008511782A JP 2008511782 A JP2008511782 A JP 2008511782A JP 2008541393 A5 JP2008541393 A5 JP 2008541393A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- well
- metal
- defining
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims description 93
- 239000002184 metal Substances 0.000 claims description 93
- 239000000463 material Substances 0.000 claims description 54
- 229920002120 photoresistant polymer Polymers 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000007641 inkjet printing Methods 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 12
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 238000002207 thermal evaporation Methods 0.000 claims description 8
- 229920000547 conjugated polymer Polymers 0.000 claims description 7
- 229920002098 polyfluorene Polymers 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 5
- -1 alkaline earth metal cation Chemical class 0.000 claims description 5
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 150000001768 cations Chemical class 0.000 claims description 3
- 239000008393 encapsulating agent Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 217
- 239000011159 matrix material Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 8
- 230000005525 hole transport Effects 0.000 description 7
- 239000011575 calcium Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 5
- 150000004673 fluoride salts Chemical class 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 150000001555 benzenes Chemical class 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000000412 dendrimer Substances 0.000 description 2
- 229920000736 dendritic polymer Polymers 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910003023 Mg-Al Inorganic materials 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical class [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001540 jet deposition Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0510282.7A GB0510282D0 (en) | 2005-05-20 | 2005-05-20 | Top-electroluminescent devices comprising cathode bus bars |
| PCT/GB2006/001793 WO2006123126A1 (en) | 2005-05-20 | 2006-05-12 | Top-emitting electroluminescent devices comprising cathode bus bars |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008541393A JP2008541393A (ja) | 2008-11-20 |
| JP2008541393A5 true JP2008541393A5 (enExample) | 2010-11-18 |
Family
ID=34834345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008511782A Pending JP2008541393A (ja) | 2005-05-20 | 2006-05-12 | カソードバスバーを有する上面発光型発光装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090066229A1 (enExample) |
| JP (1) | JP2008541393A (enExample) |
| DE (1) | DE112006001268T5 (enExample) |
| GB (3) | GB0510282D0 (enExample) |
| TW (1) | TWI321967B (enExample) |
| WO (1) | WO2006123126A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2454867B (en) * | 2007-11-09 | 2010-02-03 | Cambridge Display Tech Ltd | Electroluminescent devices comprising bus bar |
| KR101254748B1 (ko) * | 2009-05-06 | 2013-04-15 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 및 이의 제조방법 |
| TWI459587B (zh) * | 2012-02-02 | 2014-11-01 | Chunghwa Picture Tubes Ltd | 主動式發光元件 |
| DE102013110449B4 (de) * | 2013-09-20 | 2019-10-24 | Osram Oled Gmbh | Bauelement und Verfahren zum Herstellen eines Bauelementes |
| CN106129103B (zh) * | 2016-09-20 | 2023-06-30 | 合肥京东方光电科技有限公司 | 一种显示基板、其制作方法、显示面板及镀膜装置 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4539507A (en) * | 1983-03-25 | 1985-09-03 | Eastman Kodak Company | Organic electroluminescent devices having improved power conversion efficiencies |
| US5707745A (en) * | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
| US5703436A (en) * | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| JP4122554B2 (ja) * | 1998-01-21 | 2008-07-23 | 凸版印刷株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
| US6352777B1 (en) * | 1998-08-19 | 2002-03-05 | The Trustees Of Princeton University | Organic photosensitive optoelectronic devices with transparent electrodes |
| JP4137007B2 (ja) * | 2000-01-21 | 2008-08-20 | 株式会社リコー | 映像内容説明文生成装置およびコンピュータ読み取り可能な記録媒体 |
| KR100574486B1 (ko) * | 2000-06-30 | 2006-04-27 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
| US6664730B2 (en) * | 2001-07-09 | 2003-12-16 | Universal Display Corporation | Electrode structure of el device |
| JP4058930B2 (ja) * | 2001-10-09 | 2008-03-12 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置及びその製造方法、並びに電子機器 |
| JP3724725B2 (ja) * | 2001-11-01 | 2005-12-07 | ソニー株式会社 | 表示装置の製造方法 |
| SG126714A1 (en) * | 2002-01-24 | 2006-11-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| US7291970B2 (en) * | 2002-09-11 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting apparatus with improved bank structure |
| JP2004127933A (ja) * | 2002-09-11 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| JP3705283B2 (ja) * | 2002-10-03 | 2005-10-12 | セイコーエプソン株式会社 | 表示パネル及びその表示パネルを備えた電子機器 |
| GB0224121D0 (en) * | 2002-10-16 | 2002-11-27 | Microemissive Displays Ltd | Method of patterning a functional material on to a substrate |
| JP2004296303A (ja) * | 2003-03-27 | 2004-10-21 | Seiko Epson Corp | 電気光学装置、その製造方法および電子機器 |
| JP3915734B2 (ja) * | 2003-05-12 | 2007-05-16 | ソニー株式会社 | 蒸着マスクおよびこれを用いた表示装置の製造方法、ならびに表示装置 |
| US7247986B2 (en) * | 2003-06-10 | 2007-07-24 | Samsung Sdi. Co., Ltd. | Organic electro luminescent display and method for fabricating the same |
| KR100974778B1 (ko) * | 2003-06-30 | 2010-08-06 | 삼성전자주식회사 | 유기금속 전구체 조성물 및 이를 이용한 금속 필름 또는패턴 형성방법 |
| JP4567962B2 (ja) * | 2003-07-25 | 2010-10-27 | 三洋電機株式会社 | エレクトロルミネッセンス素子及びエレクトロルミネッセンスパネル |
| KR100552972B1 (ko) * | 2003-10-09 | 2006-02-15 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
| KR101026812B1 (ko) * | 2003-11-28 | 2011-04-04 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
| US20050130422A1 (en) * | 2003-12-12 | 2005-06-16 | 3M Innovative Properties Company | Method for patterning films |
| KR100699998B1 (ko) * | 2004-09-23 | 2007-03-26 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그의 제조 방법 |
-
2005
- 2005-05-20 GB GBGB0510282.7A patent/GB0510282D0/en not_active Ceased
-
2006
- 2006-05-12 WO PCT/GB2006/001793 patent/WO2006123126A1/en not_active Ceased
- 2006-05-12 US US11/915,133 patent/US20090066229A1/en not_active Abandoned
- 2006-05-12 DE DE112006001268T patent/DE112006001268T5/de not_active Withdrawn
- 2006-05-12 GB GB0722243A patent/GB2440865B/en not_active Expired - Fee Related
- 2006-05-12 JP JP2008511782A patent/JP2008541393A/ja active Pending
- 2006-05-19 TW TW095118038A patent/TWI321967B/zh not_active IP Right Cessation
-
2007
- 2007-11-15 GB GBGB0722541.0A patent/GB0722541D0/en active Pending
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