JP2008530821A5 - - Google Patents
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- JP2008530821A5 JP2008530821A5 JP2007556243A JP2007556243A JP2008530821A5 JP 2008530821 A5 JP2008530821 A5 JP 2008530821A5 JP 2007556243 A JP2007556243 A JP 2007556243A JP 2007556243 A JP2007556243 A JP 2007556243A JP 2008530821 A5 JP2008530821 A5 JP 2008530821A5
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- JP
- Japan
- Prior art keywords
- peak area
- dielectric material
- dielectric
- setting
- gpa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000003989 dielectric material Substances 0.000 claims 14
- 238000000034 method Methods 0.000 claims 11
- 239000000463 material Substances 0.000 claims 7
- 239000002243 precursor Substances 0.000 claims 6
- 239000007800 oxidant agent Substances 0.000 claims 5
- 125000004429 atom Chemical group 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 229910002808 Si–O–Si Inorganic materials 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 3
- -1 diethoxymethyl Chemical group 0.000 claims 3
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims 3
- 230000001590 oxidative effect Effects 0.000 claims 3
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical group C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 125000004122 cyclic group Chemical group 0.000 claims 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 239000010410 layer Substances 0.000 claims 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims 2
- 238000012805 post-processing Methods 0.000 claims 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims 1
- 238000001157 Fourier transform infrared spectrum Methods 0.000 claims 1
- 229910018557 Si O Inorganic materials 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 239000000969 carrier Substances 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- DGXPASZXUJQWLQ-UHFFFAOYSA-N diethyl(methoxy)silane Chemical compound CC[SiH](CC)OC DGXPASZXUJQWLQ-UHFFFAOYSA-N 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 239000011229 interlayer Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 238000001228 spectrum Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/906,370 US7202564B2 (en) | 2005-02-16 | 2005-02-16 | Advanced low dielectric constant organosilicon plasma chemical vapor deposition films |
| US10/906,370 | 2005-02-16 | ||
| PCT/US2006/005204 WO2006088881A2 (en) | 2005-02-16 | 2006-02-14 | Advanced low dielectric constant organosilicon plasma chemical vapor deposition films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008530821A JP2008530821A (ja) | 2008-08-07 |
| JP2008530821A5 true JP2008530821A5 (enExample) | 2009-02-12 |
| JP5466365B2 JP5466365B2 (ja) | 2014-04-09 |
Family
ID=36816220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007556243A Active JP5466365B2 (ja) | 2005-02-16 | 2006-02-14 | 基板上にＳｉＣＯＨ誘電体を形成する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7202564B2 (enExample) |
| EP (1) | EP1849183A4 (enExample) |
| JP (1) | JP5466365B2 (enExample) |
| KR (1) | KR100998809B1 (enExample) |
| CN (1) | CN100533681C (enExample) |
| TW (1) | TWI346982B (enExample) |
| WO (1) | WO2006088881A2 (enExample) |
Families Citing this family (60)
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|---|---|---|---|---|
| US7288292B2 (en) * | 2003-03-18 | 2007-10-30 | International Business Machines Corporation | Ultra low k (ULK) SiCOH film and method |
| US7622400B1 (en) | 2004-05-18 | 2009-11-24 | Novellus Systems, Inc. | Method for improving mechanical properties of low dielectric constant materials |
| US7202564B2 (en) * | 2005-02-16 | 2007-04-10 | International Business Machines Corporation | Advanced low dielectric constant organosilicon plasma chemical vapor deposition films |
| US7622378B2 (en) | 2005-11-09 | 2009-11-24 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
| US8956457B2 (en) * | 2006-09-08 | 2015-02-17 | Tokyo Electron Limited | Thermal processing system for curing dielectric films |
| KR20090108721A (ko) * | 2007-01-29 | 2009-10-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 신규한 공기 갭 통합 방법 |
| US7615482B2 (en) * | 2007-03-23 | 2009-11-10 | International Business Machines Corporation | Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength |
| JP5165914B2 (ja) * | 2007-03-30 | 2013-03-21 | 三井化学株式会社 | 多孔質シリカフィルム及びその製造方法 |
| US20090075491A1 (en) * | 2007-09-13 | 2009-03-19 | Tokyo Electron Limited | Method for curing a dielectric film |
| US20090226695A1 (en) * | 2008-03-06 | 2009-09-10 | Tokyo Electron Limited | Method for treating a dielectric film with infrared radiation |
| US7858533B2 (en) * | 2008-03-06 | 2010-12-28 | Tokyo Electron Limited | Method for curing a porous low dielectric constant dielectric film |
| US20090226694A1 (en) * | 2008-03-06 | 2009-09-10 | Tokyo Electron Limited | POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING |
| US7977256B2 (en) | 2008-03-06 | 2011-07-12 | Tokyo Electron Limited | Method for removing a pore-generating material from an uncured low-k dielectric film |
| US8298965B2 (en) * | 2008-09-03 | 2012-10-30 | American Air Liquide, Inc. | Volatile precursors for deposition of C-linked SiCOH dielectrics |
| US20100065758A1 (en) * | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric material treatment system and method of operating |
| US8895942B2 (en) * | 2008-09-16 | 2014-11-25 | Tokyo Electron Limited | Dielectric treatment module using scanning IR radiation source |
| US8557712B1 (en) * | 2008-12-15 | 2013-10-15 | Novellus Systems, Inc. | PECVD flowable dielectric gap fill |
| DK2251454T3 (da) | 2009-05-13 | 2014-10-13 | Sio2 Medical Products Inc | Coating og inspektion af beholder |
| US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
| JP5164079B2 (ja) * | 2009-10-21 | 2013-03-13 | 国立大学法人東北大学 | 低誘電率絶縁膜の形成方法 |
| JP5164078B2 (ja) * | 2009-10-05 | 2013-03-13 | 国立大学法人東北大学 | 低誘電率絶縁膜 |
| TW201131651A (en) * | 2009-10-05 | 2011-09-16 | Univ Tohoku | Low dielectric constant insulating film |
| US8946672B2 (en) | 2009-11-11 | 2015-02-03 | Nec Corporation | Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element |
| US8247332B2 (en) | 2009-12-04 | 2012-08-21 | Novellus Systems, Inc. | Hardmask materials |
| KR20130043084A (ko) | 2010-02-17 | 2013-04-29 | 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | ＳｉＣＯＨ 로우-Ｋ 필름의 증착 방법 |
| US8349746B2 (en) * | 2010-02-23 | 2013-01-08 | Applied Materials, Inc. | Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure |
| US9017933B2 (en) * | 2010-03-29 | 2015-04-28 | Tokyo Electron Limited | Method for integrating low-k dielectrics |
| US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
| US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
| US9719169B2 (en) | 2010-12-20 | 2017-08-01 | Novellus Systems, Inc. | System and apparatus for flowable deposition in semiconductor fabrication |
| US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
| US8637412B2 (en) | 2011-08-19 | 2014-01-28 | International Business Machines Corporation | Process to form an adhesion layer and multiphase ultra-low k dielectric material using PECVD |
| US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
| AU2012318242A1 (en) | 2011-11-11 | 2013-05-30 | Sio2 Medical Products, Inc. | Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus |
| JP5788350B2 (ja) * | 2012-03-23 | 2015-09-30 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| EP2846755A1 (en) | 2012-05-09 | 2015-03-18 | SiO2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
| US20150297800A1 (en) | 2012-07-03 | 2015-10-22 | Sio2 Medical Products, Inc. | SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS |
| CA2890066C (en) | 2012-11-01 | 2021-11-09 | Sio2 Medical Products, Inc. | Coating inspection method |
| WO2014078666A1 (en) | 2012-11-16 | 2014-05-22 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
| US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
| EP2925903B1 (en) | 2012-11-30 | 2022-04-13 | Si02 Medical Products, Inc. | Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like |
| US9337068B2 (en) | 2012-12-18 | 2016-05-10 | Lam Research Corporation | Oxygen-containing ceramic hard masks and associated wet-cleans |
| EP2961858B1 (en) | 2013-03-01 | 2022-09-07 | Si02 Medical Products, Inc. | Coated syringe. |
| US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
| CN105392916B (zh) | 2013-03-11 | 2019-03-08 | Sio2医药产品公司 | 涂布包装材料 |
| EP2971227B1 (en) | 2013-03-15 | 2017-11-15 | Si02 Medical Products, Inc. | Coating method. |
| US9847222B2 (en) | 2013-10-25 | 2017-12-19 | Lam Research Corporation | Treatment for flowable dielectric deposition on substrate surfaces |
| US20150228788A1 (en) * | 2014-02-13 | 2015-08-13 | United Microelectronics Corp. | Stress memorization process and semiconductor structure including contact etch stop layer |
| US9209017B2 (en) | 2014-03-26 | 2015-12-08 | International Business Machines Corporation | Advanced ultra low k SiCOH dielectrics prepared by built-in engineered pore size and bonding structured with cyclic organosilicon precursors |
| EP3693493A1 (en) | 2014-03-28 | 2020-08-12 | SiO2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
| US10049921B2 (en) | 2014-08-20 | 2018-08-14 | Lam Research Corporation | Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor |
| WO2016174970A1 (ja) * | 2015-04-28 | 2016-11-03 | 三井金属鉱業株式会社 | 表面処理銅箔及びその製造方法、プリント配線板用銅張積層板、並びにプリント配線板 |
| US11077233B2 (en) | 2015-08-18 | 2021-08-03 | Sio2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
| US9916977B2 (en) | 2015-11-16 | 2018-03-13 | Lam Research Corporation | Low k dielectric deposition via UV driven photopolymerization |
| US10388546B2 (en) | 2015-11-16 | 2019-08-20 | Lam Research Corporation | Apparatus for UV flowable dielectric |
| US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
| KR102392815B1 (ko) | 2017-08-02 | 2022-05-02 | 삼성전자주식회사 | 초저유전막의 제조 방법 및 이에 의해 제조된 초저유전막 |
| US12087692B2 (en) * | 2017-09-28 | 2024-09-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hardened interlayer dielectric layer |
| CN109119339B (zh) * | 2018-08-26 | 2022-02-08 | 合肥安德科铭半导体科技有限公司 | 一种低介电常数的SiCO间隔层材料及其制备方法和应用 |
| CN111484618A (zh) * | 2019-01-28 | 2020-08-04 | 海加控股有限公司 | 低温等离子电场辅助合成有机硅化合物的方法和装置 |
Family Cites Families (24)
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| JPH09260369A (ja) * | 1996-03-25 | 1997-10-03 | Toshiba Corp | 絶縁膜の形成方法 |
| US6147009A (en) | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
| JP2002538604A (ja) * | 1999-02-26 | 2002-11-12 | トリコン ホールディングス リミティド | ポリマー層の処理方法 |
| US6312793B1 (en) | 1999-05-26 | 2001-11-06 | International Business Machines Corporation | Multiphase low dielectric constant material |
| US6841256B2 (en) * | 1999-06-07 | 2005-01-11 | Honeywell International Inc. | Low dielectric constant polyorganosilicon materials generated from polycarbosilanes |
| JP3615979B2 (ja) * | 2000-01-18 | 2005-02-02 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| US6441491B1 (en) | 2000-10-25 | 2002-08-27 | International Business Machines Corporation | Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same |
| US6768200B2 (en) * | 2000-10-25 | 2004-07-27 | International Business Machines Corporation | Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device |
| US6790789B2 (en) | 2000-10-25 | 2004-09-14 | International Business Machines Corporation | Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made |
| US6756323B2 (en) | 2001-01-25 | 2004-06-29 | International Business Machines Corporation | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device |
| SG137694A1 (en) * | 2000-10-25 | 2007-12-28 | Ibm | Ultralow dielectric constant material as an intralevel or interlevel dieletric in a semiconductor device and electronic device containing the same |
| US7074489B2 (en) * | 2001-05-23 | 2006-07-11 | Air Products And Chemicals, Inc. | Low dielectric constant material and method of processing by CVD |
| US20030087043A1 (en) | 2001-11-08 | 2003-05-08 | International Business Machines Corporation | Low k dielectric film deposition process |
| EP1504138A2 (en) * | 2002-05-08 | 2005-02-09 | Applied Materials, Inc. | Method for using low dielectric constant film by electron beam |
| US7307343B2 (en) * | 2002-05-30 | 2007-12-11 | Air Products And Chemicals, Inc. | Low dielectric materials and methods for making same |
| US6770570B2 (en) | 2002-11-15 | 2004-08-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a semiconductor device with a substantially uniform density low-k dielectric layer |
| US7250370B2 (en) * | 2003-09-19 | 2007-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties |
| US20050140029A1 (en) * | 2003-12-31 | 2005-06-30 | Lih-Ping Li | Heterogeneous low k dielectric |
| US7030468B2 (en) * | 2004-01-16 | 2006-04-18 | International Business Machines Corporation | Low k and ultra low k SiCOH dielectric films and methods to form the same |
| US7009280B2 (en) | 2004-04-28 | 2006-03-07 | International Business Machines Corporation | Low-k interlevel dielectric layer (ILD) |
| US7223691B2 (en) * | 2004-10-14 | 2007-05-29 | International Business Machines Corporation | Method of forming low resistance and reliable via in inter-level dielectric interconnect |
| US7357977B2 (en) * | 2005-01-13 | 2008-04-15 | International Business Machines Corporation | Ultralow dielectric constant layer with controlled biaxial stress |
| US7202564B2 (en) * | 2005-02-16 | 2007-04-10 | International Business Machines Corporation | Advanced low dielectric constant organosilicon plasma chemical vapor deposition films |
| US7253105B2 (en) * | 2005-02-22 | 2007-08-07 | International Business Machines Corporation | Reliable BEOL integration process with direct CMP of porous SiCOH dielectric |
-
2005
- 2005-02-16 US US10/906,370 patent/US7202564B2/en not_active Expired - Lifetime
-
2006
- 2006-02-13 TW TW095104778A patent/TWI346982B/zh active
- 2006-02-14 EP EP06735050A patent/EP1849183A4/en not_active Withdrawn
- 2006-02-14 CN CNB2006800045684A patent/CN100533681C/zh active Active
- 2006-02-14 KR KR1020077018293A patent/KR100998809B1/ko not_active Expired - Fee Related
- 2006-02-14 JP JP2007556243A patent/JP5466365B2/ja active Active
- 2006-02-14 WO PCT/US2006/005204 patent/WO2006088881A2/en not_active Ceased
-
2007
- 2007-02-05 US US11/671,022 patent/US7494938B2/en not_active Expired - Lifetime
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