JP2008530816A - ２枚の半導体基板のアルミニウム電極の接合方法 - Google Patents

２枚の半導体基板のアルミニウム電極の接合方法 Download PDF

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JP2008530816A
JP2008530816A JP2007556090A JP2007556090A JP2008530816A JP 2008530816 A JP2008530816 A JP 2008530816A JP 2007556090 A JP2007556090 A JP 2007556090A JP 2007556090 A JP2007556090 A JP 2007556090A JP 2008530816 A JP2008530816 A JP 2008530816A
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aluminum
semiconductor substrates
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ピョンス イ
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SK Hynix System IC Inc
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Siliconfile Technologies Inc
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Abstract

【課題】２枚の半導体基板上に形成された回路などに影響しない低い温度で、半導体製造設備の汚染なしに、２枚の半導体基板上に形成されたアルミニウム(Ａｌ)電極を接合させる方法を提供する。
【解決手段】本発明による２枚の半導体基板のアルミニウム(Ａｌ)電極の接合方法は、(ａ)２枚の半導体基板の各々にアルミニウム(Ａｌ)電極を形成し、前記アルミニウム(Ａｌ)電極にアルミニウム(Ａｌ)と銅(Ｃｕ)とから構成された金属合金を蒸着する工程;(ｂ)前記２枚の半導体基板のアルミニウム(Ａｌ)電極を対向するように配置する工程と;(ｃ)前記アルミニウム(Ａｌ)電極に蒸着された金属合金の融点より低い温度に加熱し、前記２枚の半導体基板に所定の圧力を加える工程と;を含むことを特徴とする。本発明によれば、２枚の半導体基板上に形成された回路などに影響しないように、Ａｌ０.８３Ｃｕ０.１７合金の融点より低い温度で接合を進むことができ、圧力を受ける部分だけを選択的に接合することが可能である。
【選択図】図２

Description

本発明は、半導体製造工程に関し、特に、半導体の製造工程において、２枚の基板を重ね合う場合における、金属配線の接合方法に関する。
半導体製造工程において、電極を接合する場合、一般的に、融点が低い鉛(Ｐｂ)、スズ(Ｓｎ)、ビスマス(Ｂｉ)などの合金を使用するが、このような物質は、人体に有害であり、一般的に蒸気圧が低く、半導体製造設備を汚染させるため、半導体製造工程において使用できないという短所がある。
殆どの半導体製造工程において、金属電極としてアルミニウム(Ａｌ)を使用するが、このようなアルミニウム(Ａｌ)を使用する工程において、２枚の基板を重ねってアルミニウム(Ａｌ)電極を接合する場合、アルミニウム(Ａｌ)の電極を融点近くまで上げて接合することが可能であり、この場合、接合しようとする部分以外の部分の電極が一緒に溶けるので、既に存在する基板上の配線や回路に悪影響を与える。
本発明が達成しようとする技術的課題は、２枚の半導体基板上に形成された回路などに影響しない低い温度で、半導体製造設備の汚染なしに、２枚の半導体基板上に形成されたアルミニウム(Ａｌ)電極を接合させる方法を提供することにある。
前記技術的課題を解決するための本発明による２枚の半導体基板のアルミニウム(Ａｌ)電極の接合方法は、(ａ)２枚の半導体基板の各々にアルミニウム(Ａｌ)電極を形成し、前記アルミニウム(Ａｌ)電極にアルミニウム(Ａｌ)と銅(Ｃｕ)とから構成された金属合金を蒸着する工程;(ｂ)前記２枚の半導体基板のアルミニウム(Ａｌ)電極を対向するように配置する工程;(ｃ)前記アルミニウム(Ａｌ)電極に蒸着された合金の融点より低い温度で加熱し、前記２枚の半導体基板に所定の圧力を加える工程と;を含むことを特徴とする。
また、前記金属合金は、Ａｌ０.８３Ｃｕ０.１７であることを特徴とする。
本発明によれば、２枚の半導体基板上に形成された回路などに影響しないように、Ａｌ０.８３Ｃｕ０.１７合金の融点より低い温度で接合を進めることができ、圧力を受ける部分のみを選択的に接合することが可能である。
以下、図面を参照して、本発明を詳細に説明するようにする。
図１〜図３は、本発明に係る２枚の半導体基板上に形成されたアルミニウム(Ａｌ)電極の接合過程を示したものである。
図１は、２枚の半導体基板に形成されたＡｌ電極を示したものである。
半導体基板(１０、２０)上に、接合しようとするＡｌ電極(１３、２３)を形成し、その上に、Ａｌ０.８３Ｃｕ０.１７合金(１５、２５)を蒸着する。
図２は、２枚の半導体基板のＡｌ電極が接合される過程を示したものである。
２枚の半導体基板(１０、２０)を接合しようとするＡｌ電極(１３、２３)が重なるように配置した状態で、Ａｌ０.８３Ｃｕ０.１７合金(１５、２５)の融点より低い温度に加熱し、両半導体基板(１０、２０)に適当な圧力が加えられるようにする。
前記２枚の半導体基板(１０、２０)に適当な圧力を加えることにより、接合しようとする２つのＡｌ電極(１３、２３)が圧力を受けるようになり、前記Ａｌ０.８３Ｃｕ０.１７合金(１５、２５)は、大気圧状態での融点より低い温度で溶けるようになる。
前記Ａｌ０.８３Ｃｕ０.１７合金(１５、２５)は、融点が約５４０℃とＡｌ電極(１３、２３)の融点６５０℃よりずっと低く、溶融接合に有利である。また、前記Ａｌ０.８３Ｃｕ０.１７合金(１５、２５)は、ＡｌとＣｕとが均一に混ざる特徴を有する。
図３は、２枚の半導体基板のＡｌ電極が接合された状態を示したものである。
前記Ａｌ０.８３Ｃｕ０.１７合金(１５、２５)をＡｌ電極(１３、２３)上に蒸着し、熱を加えると、合金が蒸着された面が、Ａｌ電極部分よりも速く溶けるようになるので、接合部以外の部分の熱的損傷を防止することができ、半導体製造工程において一般的に使用される代表的な金属であるＡｌとＣｕとの合金を使用するので、半導体製造工程上の汚染が生じない。
また、高温で塗布された合金において、Ａｌ電極へのＣｕの拡散は、Ａｌ電極の融点を下げる効果を与えるが、このような拡散によって形成された合金の融点は、元の合金の融点より高いので、接合に大きい影響を与えない。
以上から、本発明は、図面に図示された実施例を参考として説明されたが、これは、例示的なものに過ぎなく、本技術分野において通常の知識を有する者ならば、これらから様々な変形及び均等な他実施例が可能である点を理解されたい。従って、本発明の真の技術的な保護範囲は、添付の請求範囲の技術的な思想により定められるべきである。
本発明に係る２枚の半導体基板上に形成されたアルミニウム(Ａｌ)電極の接合過程を示したものである。 本発明に係る２枚の半導体基板上に形成されたアルミニウム(Ａｌ)電極の接合過程を示したものである。 本発明に係る２枚の半導体基板上に形成されたアルミニウム(Ａｌ)電極の接合過程を示したものである。
符号の説明
１０、２０：２枚の半導体基板
１３，２３：Ａｌ電極
１５，２５： Ａｌ０.８３Ｃｕ０.１７合金

Claims (3)

  1. ２枚の半導体基板のアルミニウム(Ａｌ)電極を接合する方法において、
    (ａ) 前記２枚の半導体基板の各々にアルミニウム(Ａｌ)電極を形成し、前記アルミニウム(Ａｌ)電極にアルミニウム(Ａｌ)と銅(Ｃｕ)とから構成された金属合金を蒸着する工程と;
    (ｂ) 前記２枚の半導体基板のアルミニウム(Ａｌ)電極を対向するように配置する工程と;
    (ｃ) 前記アルミニウム(Ａｌ)電極に蒸着された金属合金の融点より低い温度に加熱し、前記２枚の半導体基板に所定の圧力を加える工程と;を含むことを特徴とする２枚の半導体基板のアルミニウム(Ａｌ)電極の接合方法。
  2. 前記金属合金は、
    Ａｌ０.８３Ｃｕ０.１７であることを特徴とする請求項１に記載の２枚の半導体基板のアルミニウム(Ａｌ)電極の接合方法。
  3. 前記(ｃ)工程での温度は、
    ５４０℃未満であることを特徴とする請求項１に記載の２枚の半導体基板のアルミニウム(Ａｌ)電極の接合方法。
JP2007556090A 2005-03-04 2006-03-02 ２枚の半導体基板のアルミニウム電極の接合方法 Pending JP2008530816A (ja)

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KR1020050017955A KR100591461B1 (ko) 2005-03-04 2005-03-04 두 반도체 기판의 알루미늄 전극 접합방법
PCT/KR2006/000712 WO2006093386A1 (en) 2005-03-04 2006-03-02 Method of bonding aluminum electrodes of two semiconductor substrates

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JPH08506698A (ja) * 1993-02-09 1996-07-16 ナショナル・セミコンダクター・コーポレイション 基板への半導体チップの接合方法
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JPS63107127A (ja) * 1986-10-24 1988-05-12 Hitachi Ltd 半導体装置
JPH08506698A (ja) * 1993-02-09 1996-07-16 ナショナル・セミコンダクター・コーポレイション 基板への半導体チップの接合方法
JPH11288977A (ja) * 1998-03-31 1999-10-19 Nippon Steel Corp 複数チップ混載型半導体装置
JP2002111182A (ja) * 2000-09-29 2002-04-12 Katsuaki Suganuma 導電性接着剤で接続した部品の易剥離法
JP2004288768A (ja) * 2003-03-20 2004-10-14 Mitsubishi Electric Corp 多層配線基体の製造方法

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US20080293184A1 (en) 2008-11-27
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