CN101133486A - 使两个半导体衬底的铝电极接合的方法 - Google Patents

使两个半导体衬底的铝电极接合的方法 Download PDF

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CN101133486A
CN101133486A CNA2006800066816A CN200680006681A CN101133486A CN 101133486 A CN101133486 A CN 101133486A CN A2006800066816 A CNA2006800066816 A CN A2006800066816A CN 200680006681 A CN200680006681 A CN 200680006681A CN 101133486 A CN101133486 A CN 101133486A
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electrode
semiconductor substrates
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李炳洙
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SK Hynix System IC Inc
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Siliconfile Technologies Inc
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Abstract

本发明提供了一种在不影响两个半导体衬底上所形成电路的低温下使两个半导体衬底上形成的铝(Al)电极接合的方法。该方法包括：(a)分别在两个半导体衬底上形成铝(Al)电极，并在铝(Al)电极上沉积包含铝(Al)和铜(Cu)的金属合金；(b)使两个半导体衬底的铝(Al)电极面对面排列；(c)在低于已沉积的金属合金熔点的温度下对铝(Al)电极进行加热，并且在两个半导体衬底上施加一定的压力。因此，可在低于Al0.83Cu0.17合金熔点的温度完成接合，而不影响在两个半导体衬底上形成的电路，并且接合可在施加压力的区域内选择性地完成。

Description

使两个半导体衬底的铝电极接合的方法
技术领域
本发明涉及半导体制造工艺，特别涉及在制造半导体的工艺中接合两个叠置衬底的金属线的方法。
背景技术
通常，在半导体制造工艺中利用具有低熔点的合金，如铅(Pb)、锡(Sn)和铋(Bi)，使多个电极接合。然而，此类合金对人体有害，并且由于较低的蒸气压而会污染半导体制造设备。
在大多数半导体制造工艺中，通常将铝(Al)用作金属电极。在接合铝(Al)电极以使在其中间具有铝(Al)电极的两个衬底被叠置的情况下，可将铝(Al)电极加热至邻近其熔点。由于对铝(Al)电极进行加热，所以不是接合区域的、铝(Al)电极的其他区域也将熔化，这将对衬底上已有的线路或电路产生不利的影响。
发明内容
技术问题：
为了解决上述问题，本发明的一个目的是提供一种在不影响两个半导体衬底上所形成电路的低温下使两个半导体衬底上形成的铝(Al)电极接合的方法，并且该方法不会对半导体制造设备造成污染。
技术方案：
根据本发明的一个方面，提供了一种用于使两个半导体衬底的铝(Al)电极接合的方法，包括：(a)分别在两个半导体衬底上形成铝(Al)电极，并在铝(Al)电极上沉积包含铝(Al)和铜(Cu)的金属合金；(b)使两个半导体衬底的铝(Al)电极面对面排列；(c)在低于已沉积的金属合金熔点的温度下对铝(Al)电极进行加热，并且在两个半导体衬底上施加一定的压力。
在本发明中，金属合金可以是Al0.83Cu0.17合金。
附图说明
图1至图3示出了根据本发明的实施方案使在两个半导体衬底上形成的铝(Al)电极接合的工艺。
具体实施方式
以下将结合附图对本发明进行详细描述。
图1至图3示出了根据本发明的实施方案使在两个半导体衬底上形成的铝(Al)电极接合的工艺。
图1示出了在两个半导体衬底上形成的铝(Al)电极。
待接合的铝(Al)电极13和23在半导体衬底10和20上形成，并且在其上沉积Al0.83Cu0.17合金15和25。
图2示出了使半导体衬底上的铝(Al)电极接合的工艺。
在待接合的铝(Al)电极13和23彼此搭接的情况下，以低于Al0.83Cu0.17合金15和25熔点的温度对半导体衬底10和20进行加热，并且向半导体衬底10和20上施加一定的压力。
由于施加在半导体衬底10和20上的压力，待接合的铝(Al)电极13和23受压，并因此使Al0.83Cu0.17合金15和25在低于Al0.83Cu0.17合金15和25在大气压下的熔点的温度熔化。
Al0.83Cu0.17合金15和25的熔点约为540℃，此温度远低于铝(Al)电极13和23的熔点650℃，因此适合于熔接。铝(Al)和铜(Cu)在Al0.83Cu0.17合金15和25中均匀混合。
图3示出了半导体衬底上铝(Al)电极的接合。
当在铝(Al)电极13和23上沉积Al0.83Cu0.17合金15和25，然后加热时，Al0.83Cu0.17合金15和25沉积的区域比铝(Al)电极13和23的区域熔化得快，从而防止在接合部分之外的区域的热损坏。
此外，由于在该制造工艺中应用了典型的合金金属，如铝(Al)和铜(Cu)，所以在该半导体制造工艺中不会产生污染。来自在高温下涂覆至铝(Al)电极的合金的铜(Cu)扩散使Al电极的熔点降低，但由于由此扩散形成的合金的熔点比原合金的熔点高，所以对接合的影响并不明显。
尽管结合本发明的示例性实施方案对本发明进行了具体地表述与描述，但本领域技术人员可以理解，可在不脱离所附权利要求所限定的本发明精神和范围的情况下，对本发明进行各种形式上和细节的变化。
工业适用性
因此，在本发明中，可在低于Al0.83Cu0.17合金熔点的温度完成接合，而不对两个半导体衬底上形成的电路产生影响，并且接合可在施加压力的区域内选择性地完成。

Claims (3)

1.一种用于使两个半导体衬底的铝(Al)电极接合的方法，包括：
(a)分别在所述两个半导体衬底上形成铝(Al)电极，并在所述铝(Al)电极上沉积包含铝(Al)和铜(Cu)的金属合金；
(b)使所述两个半导体衬底的所述铝(Al)电极面对面排列；并且
(c)在低于已沉积的所述金属合金熔点的温度下对所述铝(Al)电极进行加热，并且在所述两个半导体衬底上施加一定的压力。
2.如权利要求1所述的方法，其中所述金属合金为Al0.83Cu0.17合金。
3.如权利要求1所述的方法，其中步骤(c)中的所述温度低于约540℃。
CNB2006800066816A 2005-03-04 2006-03-02 使两个半导体衬底的铝电极接合的方法 Expired - Fee Related CN100508151C (zh)

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JP2835145B2 (ja) * 1990-05-28 1998-12-14 株式会社東芝 電子装置
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JPH06333983A (ja) * 1993-05-19 1994-12-02 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP4033968B2 (ja) * 1998-03-31 2008-01-16 新日鉄マテリアルズ株式会社 複数チップ混載型半導体装置
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KR20030047085A (ko) * 2001-12-07 2003-06-18 엘지전선 주식회사 니켈 금속을 연결수단으로 이용한 전자부품 및 접속방법
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EP1854135A4 (en) 2012-05-02
CN100508151C (zh) 2009-07-01
US20080293184A1 (en) 2008-11-27
KR100591461B1 (ko) 2006-06-20
JP2008530816A (ja) 2008-08-07
WO2006093386A1 (en) 2006-09-08
US7732300B2 (en) 2010-06-08

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